JP6005081B2 - Electromagnetic wave attenuation structure and electromagnetic shield structure - Google Patents

Description

  The present invention relates to an electromagnetic wave attenuation structure and an electromagnetic shield structure including the electromagnetic wave attenuation structure, and more particularly to an electromagnetic wave attenuation structure that can effectively attenuate an electromagnetic wave incident from an arbitrary direction and an electromagnetic shield structure including the electromagnetic wave attenuation structure.

  In the conventional electromagnetic wave attenuation structure, a high impedance plate is electrically attached to a metal wall in order to attenuate an electromagnetic wave propagating in an arbitrary direction. The high-impedance plate is formed by, for example, two-dimensionally periodically arranging regular hexagonal conductor patterns electrically connected to the back surface of the dielectric substrate through through-holes (for example, Patent Document 1). ).

JP 2004-022587 A

  However, in such an electromagnetic wave attenuating structure, the frequency band where the attenuation effect can be obtained includes the physical property value of the substrate, the size of the conductor pattern periodically arranged in two dimensions, the interval between the conductor patterns, the through-hole diameter, and the penetration It is affected by many parameters such as through-hole pitch. Therefore, in order to design an electromagnetic wave attenuation structure that can obtain an attenuation effect in a predetermined frequency band, it is necessary to optimize many of the above parameters, and there is a problem that the design cannot be easily performed. .

  The present invention has been made to solve the above-described problems. A main object of the present invention is to provide an electromagnetic wave attenuating structure and an electromagnetic wave shielding structure that can be easily designed as compared with a conventional method for designing an electromagnetic wave attenuating structure.

  An electromagnetic wave attenuation structure according to the present invention is formed on a dielectric substrate having a first main surface and a second main surface located on the opposite side of the first main surface, and on the first main surface. A second conductor formed on the second main surface, and a through conductor that electrically connects the first conductor and the second conductor, the second conductor The conductor is formed with a plurality of dielectric exposed areas where the second main surface is exposed, and the dielectric exposed areas are formed by the plurality of through conductors formed at intervals. being surrounded.

  It is possible to provide an electromagnetic wave attenuation structure and an electromagnetic wave shield structure that can be easily designed as compared with the conventional method of designing an electromagnetic wave attenuation structure.

It is a figure for demonstrating the electromagnetic shielding structure which concerns on Embodiment 1. FIG. It is sectional drawing seen from the line segment II-II shown in FIG. It is the top view seen from line segment III-III shown in FIG. It is sectional drawing seen from the line segment IV-IV shown in FIG. It is sectional drawing seen from the line segment VV shown in FIG. 5 is a graph for explaining electromagnetic shielding characteristics of the electromagnetic wave attenuation structure according to Embodiment 1. It is a top view for demonstrating the modification of the electromagnetic wave attenuation | damping structure shown in FIG. It is sectional drawing seen from the line segment VIII-VIII shown in FIG. 6 is a graph for explaining electromagnetic shielding characteristics of an electromagnetic wave attenuation structure according to Embodiment 2. 6 is a graph for explaining electromagnetic shielding characteristics in a modification of the electromagnetic wave attenuation structure according to Embodiment 2. It is sectional drawing for demonstrating the electromagnetic shielding structure which concerns on Embodiment 3. FIG. 6 is a graph for explaining electromagnetic shielding characteristics of an electromagnetic wave attenuating structure according to Embodiment 3. It is sectional drawing for demonstrating the electromagnetic shielding structure which concerns on Embodiment 4. FIG. It is sectional drawing for demonstrating the electromagnetic shielding structure which concerns on Embodiment 5. FIG. FIG. 10 is a cross-sectional view for explaining a modification of the electromagnetic shield structure according to the fifth embodiment. FIG. 10 is a cross-sectional view for explaining another modification of the electromagnetic shield structure according to Embodiment 5.

  Embodiments of the present invention will be described below with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
First, the electromagnetic shield structure 100 according to Embodiment 1 will be described with reference to FIGS. 1 and 2. The electromagnetic shield structure 100 is a structure that acts as an electromagnetic shield and can be an arbitrary structure having a gap. For example, the electromagnetic shield structure 100 is configured as an electromagnetic shield door. FIG. 1 is a front view of the electromagnetic shield structure 100. 2 is a YZ sectional view taken along line II-II in FIG. In the electromagnetic shield structure 100, the door 1 and the door frame 2 are connected via a hinge 8. The door 1 has a structure that can be opened and closed with respect to the door frame 2 by an opening / closing lever 11.

  In the state where the door 1 is closed, a gap is provided between the door 1 and the door frame 2. Thereby, even if the opening / closing frequency | count of the door 1 increases, it can prevent that the door 1 and the door frame 2 wear, and an electromagnetic shielding characteristic deteriorates. In the gap between the door 1 and the door frame 2, the electromagnetic wave attenuation structure 10 is disposed on the door 1 so as to face the gap.

  The electromagnetic wave attenuation structure 10 has a structure in which a substrate integrated waveguide resonator (hereinafter referred to as SIW resonator) is two-dimensionally multi-staged on a dielectric substrate 3 (hereinafter simply referred to as substrate 3). Have. 3 is a plan view of the electromagnetic wave attenuation structure 10 when viewed from the gap between the door 1 and the door frame 2. FIG. 4 is a cross-sectional view (YZ plan view) viewed from the line IV-IV shown in FIG. ). 3 and 4, substrate 3 has a first main surface 3A and a second main surface 3B. The substrate 3 may be an arbitrary resin substrate, for example. A first conductor 4 is formed on the first main surface 3A, and a second conductor 5 is formed on the entire surface of the second main surface 3B.

  A plurality of dielectric exposed regions 6 where the first main surface 3A is exposed are formed in the first conductor 4. The individual dielectric exposure regions 6 are provided at a predetermined interval from each other. Referring to FIG. 3, the planar shape of each dielectric material exposure region 6 is provided, for example, as a square (length H1 of one side) having the same dimensions. The intervals between the individual dielectric display regions 6 are different in three columns in the vertical and horizontal directions. For example, the distance (Lb + Lc) between the first and second columns from the left in FIG. The distance from the third row (Ld + Le) is longer than the distance from the third row, and the distance between the first row and the second row (Lh + Li) counted from the page is greater than the distance between the second row and the third row (Lj + Lk). Also long. The dielectric exposed region 6 may be formed by any method, and may be formed, for example, by partially peeling or removing the first conductor 4. For example, on the first conductor 4 formed on the entire surface of the first main surface 3A, the dielectric exposed region is etched by using a mask pattern in which an opening having the same size is formed in a predetermined region. 6 may be formed.

  A plurality of through conductors 7 that electrically connect the first conductor 4 and the second conductor 5 are formed on the substrate 3 at a predetermined interval (pitch). Referring to FIG. 4, the through conductor 7 is electrically connected to the first conductor 4 on the first main surface 3 </ b> A. In FIG. 3, the through conductor 7 is illustrated by a solid line. The pitch between the through conductors 7 is preferably as short and dense as possible, but is, for example, 1.5 mm or less. The plurality of through conductors 7 are arranged on the first main surface 3A in a lattice shape (a state in which squares formed by the rows of the through conductors 7 are periodically arranged). One dielectric exposure region 6 is formed in each of the divided rectangular regions. In other words, the plurality of through conductors 7 are formed so as to surround the individual dielectric exposed regions 6 one by one, separated from each side of the individual dielectric exposed regions 6 by a predetermined distance, and They are provided in a straight line extending in parallel with each side at a constant pitch. At this time, the vertical and horizontal column intervals of the through conductors 7 formed by arranging the plurality of through conductors 7 in a straight line are different for every four vertical and horizontal columns. For example, in the first row of dielectric exposed areas 6 counted from the left in FIG. 3 and the plurality of through conductors 7 provided so as to surround the dielectric exposed areas 6, the left side of the dielectric exposed areas 6, the left side, The distance La between the row of the through conductors 7 facing each other with the one conductor 4 interposed therebetween is larger than the distance Lb between the right side of the dielectric exposed region 6 and the right side and the row of the through conductors 7 facing each other with the first conductor 4 interposed therebetween. long.

  Further, in the dielectric exposed region 6 in the second vertical column counted from the left in FIG. 3 and the plurality of through conductors 7 provided so as to surround the dielectric exposed region 6, the left side of the dielectric exposed region 6 and the left side The distance Lc between the first conductor 4 and the row of through conductors 7 facing each other is the distance between the right side of the dielectric exposed region 6 and the right side of the first conductor 4 and the row of the through conductors 7 facing each other. It is longer than Ld, and the right side of the first row of dielectric exposed areas 6 and the row of through conductors 7 facing the right side with the first conductor 4 (the left side of the second row of dielectric exposed areas 6 and The distance Lb is shorter than the distance Lb between the first conductors 4 and the opposing through conductors 7.

  Further, in the dielectric exposed region 6 in the third vertical column counted from the left in FIG. 3 and the plurality of through conductors 7 provided so as to surround the dielectric exposed region 6, the left side of the dielectric exposed region 6 and the left side The distance Le between the rows of through conductors 7 facing each other with the first conductor 4 interposed therebetween is the distance between the right side of the dielectric exposed region 6 and the right side and the row of through conductors 7 facing each other with the first conductor 4 interposed therebetween. It is longer than Lf, and the right side of the dielectric exposure region 6 in the second vertical column and the row of the through conductors 7 facing the right side with the first conductor 4 (the left side of the dielectric exposure region 6 in the third vertical column) The distance Ld is shorter than the distance Ld between the first conductors 4 and the opposing through conductors 7).

  Further, for example, in the dielectric exposed region 6 in the first horizontal row counted from the paper surface in FIG. 3 and the plurality of through conductors 7 provided so as to surround the dielectric exposed region 6, the upper side of the dielectric exposed region 6; The distance Lg between the upper side and the row of through conductors 7 facing each other with the first conductor 4 interposed therebetween is the lower side of the dielectric exposed region 6 and the row of the through conductors 7 facing the lower side and the first conductor 4 across the first conductor 4. Longer than the interval Lh.

  Further, in the dielectric exposed region 6 in the second horizontal row from the paper surface in FIG. 3 and the plurality of through conductors 7 provided so as to surround the dielectric exposed region 6, the upper side of the dielectric exposed region 6 and the upper side The distance Li between the row of through conductors 7 facing each other across the first conductor 4 is the lower side of the dielectric exposed region 6 and the row of the through conductors 7 facing across the lower side and the first conductor 4. The lower side of the dielectric exposed region 6 in the first horizontal row and the row of through conductors 7 facing the lower side and the first conductor 4 (the upper side of the dielectric exposed region 6 in the second horizontal row) are longer than the distance Lj. And the distance Lh between the first conductors 4 and the row of through conductors 7 facing each other).

  Furthermore, in the dielectric exposed region 6 in the third horizontal row counted from the paper surface in FIG. 3 and the plurality of through conductors 7 provided so as to surround the dielectric exposed region 6, the upper side of the dielectric exposed region 6 and the upper side The distance Lk between the row of through conductors 7 facing each other with the first conductor 4 interposed therebetween is the lower side of the dielectric exposed region 6 and the row of the through conductors 7 facing each other with the lower side sandwiched between the first conductors 4. The lower side of the dielectric exposed region 6 in the second horizontal row and the row of the through conductors 7 facing the lower side and the first conductor 4 (the upper side of the dielectric exposed region 6 in the third horizontal row) are longer than the interval Ll. And a distance Lj between the first conductor 4 and the row of through conductors 7 facing each other). In the present embodiment, the distance between the dielectric exposed region 6 and the through conductor 7 refers to one side of the dielectric exposed region 6 and the one side of the through conductor 7 facing each other with the first conductor 4 interposed therebetween. The shortest distance from the center.

  In this case, one end of the first conductor 4 is short-circuited by the through conductor 7 and the second conductor 5 on the first main surface 3A of the substrate 3, and the other end faces the dielectric exposed region 6. The short stub 9 (refer FIG. 4) which is an open end can be comprised. At this time, the line length of the short stub 9 corresponds to the distance between the dielectric exposed region 6 and the through conductor 7. That is, in the electromagnetic wave attenuation structure 10 according to the present exemplary embodiment, six types of short stubs 9 with line lengths La to Lf are formed in the Y direction, and six types of short stubs with line lengths Lg to Ll in the X direction. 9 is formed.

  In this manner, in the electromagnetic wave seal and structure 100 according to the present embodiment, the gap between the door 1 and the door frame 2 propagates in the Y direction in FIG. 1 (from the front side of the door 1 to the back side of the door 1). The electromagnetic wave to be transmitted always propagates on the surface (first main surface 3A) of the electromagnetic wave attenuation structure 10 configured as the multistage SIW resonator loaded substrate. At this time, at the frequency at which the line length La of the short stub 9 in FIG. 4 becomes a quarter wavelength, that is, the resonance frequency of the short stub 9, the surface impedance of the short stub 9 increases and the propagation of electromagnetic waves is suppressed. Here, as shown in FIG. 4, on the first main surface 3A of the substrate 3, six short stubs 9 having line lengths La to Lf are formed in the Y direction. Therefore, the resonance frequencies of the short stubs 9 of the line lengths La to Lf are f1 to f6, respectively, and the interval between the resonance frequencies f1 to f6 (for example, the interval between f1 and f2 or the interval between f5 and f6) is δf. If the line lengths La to Lf are designed to be distributed at equal intervals, the electromagnetic shielding characteristics of the electromagnetic wave attenuating structure 10 against electromagnetic waves propagating in the Y direction in FIG. 1 have frequencies f1 to f1 as shown in FIG. It is possible to have at least six attenuation poles at intervals of δf in the band of f6. Moreover, it has sufficient electromagnetic shielding characteristics G1 in the frequency band located between the individual attenuation poles. As a result, the electromagnetic wave attenuation structure 10 can exhibit an attenuation effect in a wide frequency band with respect to the electromagnetic wave propagating in the Y direction. FIG. 6 is a graph showing the electromagnetic wave attenuation characteristics of the electromagnetic wave attenuation structure 10, wherein the horizontal axis indicates the frequency of the electromagnetic waves, and the vertical axis indicates the electromagnetic shield characteristics (unit: dB).

  As an example of the electromagnetic wave attenuation structure 10, a dielectric substrate 3 having a relative dielectric constant of 4.3, a substrate thickness of 0.6 mm, a through-through hole diameter of 0.15 mm, and a through-through hole pitch of 0.5 mm is used. For the purpose of obtaining electromagnetic shielding characteristics in a frequency band of 5 GHz or less, f1 = 12 GHz, f2 = 12.5 GHz, f3 = 13 GHz, f4 = 13.5 GHz, f5 = 14 GHz, f6 = 14.5 GHz, For δf = 0.5 GHz, La = 7.6 mm, Lb = 7.3 mm, Lc = 6.9 mm, Ld = 6.6 mm, Le = 6.3 mm, and Lf = 6.0 mm.

  Further, the electromagnetic wave propagating in the X direction in FIG. 1 through the gap between the door 1 and the door frame 2 passes through the surface (first main surface 3A) of the electromagnetic wave attenuation structure 10 configured as a multistage SIW resonator loaded substrate. Can propagate. FIG. 5 is an XZ sectional view taken along line VV shown in FIG.

  As shown in FIG. 5, on the first main surface 3A of the substrate 3, six short stubs 9 having line lengths Lg to Ll are formed in the X direction. Therefore, the resonance frequencies of the respective short stubs 9 having the line lengths Lg to Ll are set to f1 to f6 (in other words, the line lengths Lg to Ll are respectively equivalent to the line lengths La to Lf in the Y direction), and each resonance frequency is set. If the line lengths Lg to Ll are designed to be distributed so that the interval between f1 to f6 (for example, the interval between f1 and f2 or the interval between f5 and f6) is equal to δf, the Y direction in FIG. The electromagnetic shielding characteristics of the electromagnetic wave attenuation structure 10 with respect to the electromagnetic waves propagating to can have six attenuation poles similar to the electromagnetic shielding characteristics G1 in the Y direction shown in FIG. As a result, the electromagnetic wave attenuation structure 10 can exhibit an attenuation effect in a wide frequency band even with respect to the electromagnetic wave propagating in the X direction.

  As described above, according to the electromagnetic wave attenuation structure 10 according to the present embodiment, each of the X direction and the Y direction can have six attenuation poles as shown in FIG. In contrast, an attenuation effect can be achieved in a wide frequency band. Further, since the X direction and the Y direction are orthogonal to each other, the electromagnetic wave attenuation structure 10 is also shown in FIG. 6 for an electromagnetic wave having a predetermined frequency propagating in an arbitrary direction on the XY plane in FIG. It can have electromagnetic shielding properties.

  As described above, according to the electromagnetic wave attenuating structure 10 according to the first embodiment, each through conductor 7 functions as an ideal electric wall by forming the through conductors 7 with the pitch as short and dense as possible. can do. For this reason, the electromagnetic wave attenuation structure 10 according to the first embodiment can be designed mainly using the line length of the short stub 9 as a design parameter, and parameters relating to the through conductor 7 such as the diameter of the through conductor 7 are electromagnetic wave attenuation. It does not contribute to the resonance frequency of the structure 10. As a result, compared to conventional electromagnetic wave attenuation structures that require many design parameters such as the dimensions of conductor patterns that are two-dimensionally periodically arranged, conductor pattern spacing, through-hole diameter, and through-hole pitch, The electromagnetic wave attenuation structure 10 according to Embodiment 1 can be designed easily. The dimension of the dielectric material exposure region 6 affects the degree of coupling as a resonator, but hardly affects the resonance frequency.

  Furthermore, in the electromagnetic shield structure 100 according to the present embodiment, since the electromagnetic wave attenuation structure 10 is disposed so that the first main surface 3A faces the gap between the door 1 and the door frame 2, the gap is not formed. An attenuation effect can be exerted on electromagnetic waves propagating in an arbitrary direction through a wide frequency band of frequencies f1 to f6. On the other hand, in the conventional electromagnetic wave attenuation structure described in Patent Document 1 described above, a plurality of conductor patterns having different conductor pattern dimensions are two-dimensionally cycled in order to increase the frequency band in which the attenuation effect can be obtained. Although it is necessary to arrange, the location where periodicity breaks down will arise. Therefore, the conventional electromagnetic wave attenuation structure has a problem that it is difficult to widen the frequency band where the attenuation effect can be obtained. The electromagnetic wave attenuating structure 10 according to Embodiment 1 can include short stubs 9 having a plurality of line lengths without causing periodic failure.

  Further, in the electromagnetic shield structure 100 according to the first embodiment, the door 1 and the door frame 2 are not in contact with each other, so that it is possible to prevent the deterioration of electromagnetic shielding performance due to an increase in the number of times the door 1 is opened and closed.

  In addition, in the electromagnetic wave attenuation structure 10 according to the first exemplary embodiment, the line length of the short stub 9 is provided in six ways, but by increasing or decreasing the number of lattices by the dielectric exposed region 6 and the through conductor 7, The electromagnetic wave attenuation structure 10 having an arbitrary number of different line lengths can be easily obtained (see the second embodiment).

  In the electromagnetic shielding structure 100 according to the first embodiment, the electromagnetic wave attenuation structure 10 is formed on the wall surface of the door 1 facing the gap between the door 1 and the door frame 2, but on the wall surface of the door frame 2. The electromagnetic wave attenuation structure 10 may be formed. Even if it does in this way, there can exist an effect similar to the electromagnetic shielding structure 100 which concerns on Embodiment 1. FIG.

  Further, the electromagnetic shield structure 100 can take any form as long as the electromagnetic wave attenuation structure 10 is disposed so as to face the gap on the conductor wall having the gap. Even if it does in this way, the effect similar to the electromagnetic shielding structure 100 which concerns on Embodiment 1 with respect to the electromagnetic wave which propagates through the said gap | interval can be show | played.

  In the electromagnetic wave attenuation structure 10 according to the first exemplary embodiment, the line lengths Lg to Ll in the X direction are formed so as to be equivalent to La to Lf in the Y direction, respectively, but not limited thereto. May be different. That is, the resonance frequency of each short stub 9 in the X direction is set to f7 to f12, and the interval between the resonance frequencies f7 to f12 (for example, the interval between f7 and f8 or the interval between f11 and f12) is equal to δf. The line lengths Lg to Ll may be designed so as to be distributed.

  Further, in the electromagnetic wave attenuation structure 10 according to the first exemplary embodiment, the dielectric exposed regions 6 having a square planar shape provided with the same dimensions are provided at different intervals, and individual dielectric exposed regions are provided. The rows of through conductors 7 arranged linearly so as to surround 6 are provided at different intervals, but the present invention is not limited to this. For example, referring to FIG. 7 and FIG. 8, dielectric exposed regions 6 having different shapes and dimensions are provided at different intervals on individual regions surrounded by through conductors 7 provided in a square lattice shape. It may be done.

  Specifically, for example, rows each including a plurality of through conductors 7 provided at a constant pitch are formed in parallel to each other in the X direction and the Y direction by an equal interval L. At this time, the planar shape of the three dielectric exposed regions 6 in the first column, counting from the left in FIG. 7, is the length H2 of one side in the Y direction, whereas the planar shape of one side in the X direction is one. The length of the first horizontal row is different from the length H5, the second horizontal row is the length H6, and the third horizontal row is H7. The distance La between the left side of these three dielectric exposed regions 6 and the row of through conductors 7 facing each other with the first conductor 4 interposed therebetween is the right side of the dielectric exposed region 6, the right side, and the first conductor. 4 is longer than the distance Lb from the row of through conductors 7 facing each other.

  Furthermore, the planar shape of the dielectric exposed region 6 in the second vertical column as counted from the left in FIG. 7 is, for example, the length H3 of one side in the Y direction, whereas the length of one side in the X direction is horizontal. The first row is different in length H5, the second row in length H6, and the third row in H7. The distance Lc between the left side of these three dielectric exposed regions 6 and the row of through conductors 7 facing each other across the left side and the first conductor 4 is the right side of the dielectric exposed region 6, the right side, and the first conductor. 4 is longer than the distance Ld between the rows of through conductors 7 facing each other across 4, and the right side of the dielectric exposed region 6 in the first vertical column, and the row of through conductors 7 facing each other across the right conductor and the first conductor 4. It is shorter than the distance Lb between the left side of the dielectric material exposure region 6 in the vertical second row and the row of the through conductors 7 facing each other across the first conductor 4.

  Furthermore, the planar shape of the dielectric exposed region 6 in the third vertical column from the left in FIG. 7 is, for example, the length H4 of one side in the Y direction, whereas the length of one side in the X direction is horizontal. The first row is different in length H5, the second row in length H6, and the third row in H7. The distance Le between the left side of these three dielectric exposed regions 6 and the row of through conductors 7 facing each other with the first conductor 4 interposed therebetween is the right side of the dielectric exposed region 6, the right side, and the first conductor. 4 is longer than the distance Lf between the rows of through conductors 7 facing each other across 4 and the right side of the dielectric exposed region 6 in the second vertical column, and the row of through conductors 7 facing across the right side and the first conductor 4 The distance Ld is shorter than the distance Ld between the left side of the dielectric exposed region 6 in the third vertical column and the row of the through conductors 7 facing each other across the first conductor 4.

  In addition, the distance Lg between the upper sides of the three dielectric exposed regions 6 arranged in the first horizontal row and the row of the through conductors 7 facing each other across the first conductor 4 is determined by the dielectric exposed region 6. Longer than the distance Lh between the lower side and the row of through conductors 7 facing each other with the first conductor 4 interposed therebetween.

  Further, the distance Li between the upper sides of the three dielectric exposed regions 6 arranged in the second horizontal row and the row of the through conductors 7 facing each other across the first conductor 4 is determined by the dielectric exposed region 6. The lower side of the dielectric exposed region 6 in the first horizontal row, the lower side, and the lower side and the first conductor 4 are longer than the interval Lj between the lower side and the lower side and the row of through conductors 7 facing each other across the first conductor 4. It is shorter than the distance Lh between the row of through conductors 7 facing each other (the upper side of the dielectric exposed region 6 in the second horizontal row and the row of through conductors 7 facing each other across the first conductor 4).

  Further, the distance Lk between the upper sides of the three dielectric exposed regions 6 arranged in the third horizontal row and the row of the through conductors 7 facing each other across the first conductor 4 is determined by the dielectric exposed region 6. The lower side of the dielectric exposed region 6 in the horizontal second row, the lower side, and the lower side and the first conductor 4 are longer than the interval Ll between the lower side and the lower side and the row of through conductors 7 facing each other across the first conductor 4. It is shorter than the distance Lj between the rows of through conductors 7 facing each other (the upper side of the third dielectric exposed region 6 and the row of through conductors 7 facing each other across the first conductor 4).

  Thus, even if the individual dielectric exposed regions 6 have different dimensions and are arranged at different intervals, and the through conductors 7 are formed in a square lattice shape, the line of the short stub 9 The electromagnetic wave attenuation structure 10 having different lengths can be formed, and the same effect as the electromagnetic wave attenuation structure 10 according to Embodiment 1 can be obtained.

(Embodiment 2)
Next, the electromagnetic wave attenuation structure 10 and the electromagnetic shield structure 100 according to Embodiment 2 will be described. The electromagnetic wave attenuation structure 10 and the electromagnetic shield structure 100 according to the second exemplary embodiment basically have the same configuration as the electromagnetic wave attenuation structure 10 and the electromagnetic shield structural body 100 according to the first exemplary embodiment, but in the X direction. And the length of the short stub 9 in at least one direction in the Y direction is different in that it is provided in two ways instead of six.

  Specifically, the line lengths La to Lf of the short stub 9 in FIG. 4 and the line lengths Lg to Ll of the short stub 9 in FIG. 5 need to be different from each other as in the first embodiment. There is no. Therefore, for example, the line lengths La to Lc and the line lengths Lg to Li are set to ¼ wavelength at the frequency f1, respectively, and the line lengths Ld to Lf and the line lengths Lj to Ll are set to ¼ wavelength at the frequency f2, respectively. If designed, the number of short stubs 9 having frequencies f1 and f2 as resonance frequencies can be made larger than that of the electromagnetic wave attenuation structure 10 according to the first embodiment.

  As a result, the electromagnetic wave attenuation structure according to the second embodiment is narrower than the electromagnetic wave attenuation structure 10 according to the first embodiment as shown in FIG. Higher electromagnetic shielding characteristics can be obtained. FIG. 9 is a graph showing the electromagnetic wave attenuation characteristics of the electromagnetic wave attenuation structure 10, wherein the horizontal axis indicates the frequency of the electromagnetic waves, and the vertical axis indicates the electromagnetic shield characteristics (unit: dB). The electromagnetic shielding characteristic G1 indicated by the dotted line in FIG. 9 is the electromagnetic shielding characteristic of the electromagnetic wave attenuation structure 10 according to Embodiment 1 shown in FIG.

  Further, the line length of all the short stubs 9 may be designed to be ¼ wavelength at the frequency f1. In this way, since all the short stubs 9 resonate at the frequency f1, the band becomes narrower. However, as shown in FIG. 10, higher electromagnetic shielding characteristics can be obtained at the frequency f1. That is, in the electromagnetic wave attenuation structure according to Embodiment 2, the electromagnetic wave attenuation structure according to Embodiment 1 is designed in a specific frequency band or a specific frequency by designing the short stub 9 without distributing the line length. It can have a shielding characteristic higher than 10. FIG. 10 is a graph showing the electromagnetic wave attenuation characteristics of the electromagnetic wave attenuation structure 10, wherein the horizontal axis indicates the frequency of the electromagnetic waves, and the vertical axis indicates the electromagnetic shield characteristics (unit: dB). The electromagnetic shield characteristic G1 indicated by the dotted line in FIG. 10 is the electromagnetic shield characteristic of the electromagnetic wave attenuation structure 10 according to Embodiment 1 shown in FIG.

(Embodiment 3)
Next, the electromagnetic wave attenuation structure and the electromagnetic shield structure according to Embodiment 3 will be described. The electromagnetic wave attenuation structure 10 and the electromagnetic shield structure 100 according to Embodiment 3 basically have the same configuration as the electromagnetic wave attenuation structure 10 and the electromagnetic shield structure 100 according to Embodiment 1, but FIG. The electromagnetic wave attenuation structure 10 is different not only on the door 1 facing the gap but also on the door frame 2 as shown in FIG.

  In this way, it is possible to increase the number of short stubs 9 having a resonance frequency of the frequency f1 or more and f6 or less than that of the electromagnetic shield structure 100 according to the first embodiment. FIG. 12 is a graph showing the electromagnetic wave attenuation characteristics of the electromagnetic wave attenuation structure 10, wherein the horizontal axis represents the frequency of the electromagnetic waves, and the vertical axis represents the electromagnetic shield characteristics (unit: dB). The electromagnetic shield characteristic G1 indicated by the dotted line in FIG. 12 is the electromagnetic shield characteristic of the electromagnetic wave attenuation structure 10 according to Embodiment 1 shown in FIG. As shown in FIG. 12, an electromagnetic shield characteristic higher than the characteristic G1 of the electromagnetic shield structure 100 according to Embodiment 1 can be realized in a band of frequencies f1 or more and f6 or less.

(Embodiment 4)
Next, an electromagnetic wave attenuation structure and an electromagnetic shield structure according to Embodiment 4 will be described. The electromagnetic wave attenuation structure 10 and the electromagnetic shield structure 100 according to the fourth exemplary embodiment basically have the same configuration as the electromagnetic wave attenuation structure 10 and the electromagnetic shield structural body 100 according to the first exemplary embodiment. The electromagnetic shield structure 100 differs in that the conductive gasket 12 is further provided.

  Referring to FIG. 13, specifically, a conductive gasket 12 that can electrically connect between the door 1 and the door frame 2 is provided in the gap between the door 1 and the door frame 2. The conductive gasket 12 may be provided on the wall surface of the door 1 (one conductor wall) or the door frame 2 (the other) as long as the conductor walls are electrically connected across the gap. May be provided on the wall surface of the conductor wall.

  The conductive gasket 12 only needs to have an arbitrary structure for electrically connecting the door 1 and the door frame 2 when the door 1 is closed. For example, the conductive gasket 12 may have a finger shape or the door 1. It may be formed so as to surround the entire outer periphery of the door frame or along the entire inner periphery of the door frame 2. The material constituting the conductive gasket 12 can be any material as long as it has conductivity. For example, the material may be composed of any metal material, or any material having conductivity and stretchability. It may be configured.

  In this way, the same effects as those of the electromagnetic shielding structure 100 according to Embodiment 1 can be obtained, and the electromagnetic shielding characteristics of the conductive gasket 12 can be further added, resulting in higher electromagnetic shielding characteristics. Can be realized.

(Embodiment 5)
Next, an electromagnetic wave attenuation structure and an electromagnetic shield structure according to Embodiment 5 will be described. The electromagnetic wave attenuation structure 10 and the electromagnetic shield structure 100 according to Embodiment 5 basically have the same configuration as the electromagnetic wave attenuation structure 10 and the electromagnetic shield structure 100 according to Embodiment 1, but FIG. As shown in FIG. 4, the electromagnetic shield structure 100 is different in that it further includes a radio wave absorber 13.

  Referring to FIG. 14, specifically, radio wave absorber 13 may be arranged in series in the Y-axis direction with respect to electromagnetic wave attenuation structure 10 in the gap between door 1 and door frame 2. The radio wave absorber 13 may be a conductive radio wave absorber having a conductive fiber as a constituent material, or a magnetic radio wave absorber having iron (Fe), nickel (Ni), ferrite, or the like as a constituent material. Also good.

  In this way, the same effects as those of the electromagnetic shielding structure 100 according to Embodiment 1 can be obtained, and the electromagnetic shielding characteristics of the radio wave absorber 13 are further added, so that higher electromagnetic shielding characteristics can be obtained. Can be realized.

  Referring to FIG. 15, the radio wave absorber 13 is formed on the door frame 2 (the other conductor wall) facing the door 1 (one conductor wall) provided with the electromagnetic wave attenuation structure 10 with a gap therebetween. It may be. Referring to FIG. 16, the radio wave absorber 13 may be formed on the first main surface 3 </ b> A of the electromagnetic wave attenuation structure 10. Even if it does in this way, there can exist an effect similar to the electromagnetic wave attenuation structure which concerns on Embodiment 5. FIG.

  The electromagnetic wave attenuation structure 10 according to the third to fifth embodiments is not limited to the form having the same configuration as the electromagnetic wave attenuation structure 10 according to the first embodiment. You may provide the structure similar to the electromagnetic wave attenuation structure which concerns.

  In addition, in the electromagnetic wave attenuation structure 10 according to the first to fifth embodiments, the through conductor 7 includes a plurality of arrays of through conductors 7 provided in the X direction, and through holes provided in the Y direction perpendicular thereto. Although the plurality of conductors 7 are arranged in a lattice pattern, the present invention is not limited to this. For example, a plurality of arrays of through conductors 7 provided in the X direction and a plurality of arrays of through conductors 7 provided at an arbitrary angle with respect to the X direction are provided to form a parallelogram. Also good. In this case, the planar shape of the dielectric exposed region 6 may be, for example, a parallelogram. Even if it does in this way, there can exist an effect similar to the electromagnetic wave attenuation | damping structure 10 and the electromagnetic shielding structure 100 which concern on Embodiment 1-Embodiment 5. FIG.

  The present invention is particularly advantageously applied to an electromagnetic shield structure that can be easily formed on a conductor wall or the like having a gap.

  DESCRIPTION OF SYMBOLS 1 Door, 2 Door frame, 3 Dielectric board | substrate, 3A 1st main surface, 3B 2nd main surface, 4 1st conductor, 5 2nd conductor, 6 Dielectric material exposed area | region, 7 Through conductor, 8 Hinge, 9 Short stub, 10 Electromagnetic wave attenuation structure, 11 Open / close lever, 12 Conductive gasket, 13 Radio wave absorber, 100 Electromagnetic shield structure.

Claims (9)

A dielectric substrate having a first main surface and a second main surface located on the opposite side of the first main surface;
A first conductor formed on the first main surface;
A second conductor formed on the second main surface;
A through conductor that electrically connects the first conductor and the second conductor;
A plurality of the through conductors are formed at intervals from each other on the first main surface,
The first conductor is formed with a plurality of dielectric exposed regions where the first main surface is exposed,
Each of the dielectric material exposed regions is an electromagnetic wave attenuation structure that is surrounded by a plurality of the through conductors. The dielectric exposed region has a first end surface and a second end surface facing each other,
A distance between the first end face and the through conductor facing each other across the first conductor;
2. The electromagnetic wave attenuation structure according to claim 1, wherein a distance between the second end face and the through conductor facing each other with the first conductor interposed therebetween is different.   Among the plurality of dielectric exposed areas, adjacent first dielectric exposed areas and second dielectric exposed areas sandwich the first end face and the first conductor in the first dielectric exposed areas. The distance between the opposing through conductors and the distance between the first end face in the other second dielectric exposed region and the opposing through conductors across the first conductor are different from each other. Electromagnetic wave attenuation structure.   The plurality of through conductors are formed in a plurality in the second direction intersecting the first direction, and the group of through conductors formed in a plurality so as to be aligned in the first direction in plan view. The electromagnetic wave attenuation structure according to claim 2 or 3, comprising a group of conductors.   The electromagnetic wave attenuation structure according to claim 4, wherein the first direction and the second direction are orthogonal to each other. A pair of conductor walls facing each other across a gap;
In the position facing the gap, the electromagnetic wave attenuation structure according to any one of claims 1 to 5 is provided on at least one of the pair of conductor walls.
The electromagnetic shield structure, wherein the one conductor wall and the second conductor are electrically connected.   The electromagnetic wave according to claim 6, further comprising a conductive gasket electrically connecting the pair of conductor walls at a position on at least one of the pair of conductor walls and facing the gap. Shield structure.   The electromagnetic shield structure according to claim 6 or 7, further comprising a radio wave absorber at a position on at least one of the pair of conductor walls and facing the gap.   A pair of said conductor wall is comprised with the door comprised with the material which has electroconductivity, and the electroconductive door frame surrounding the circumference | surroundings of the said door, The any one of Claims 6-8. The electromagnetic shielding structure described in 1.

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