JP2011015044A - Choke flange of waveguide, and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a choke flange of a waveguide, wherein the characteristic of a choke is made stable to obtain an excellent signal transmission characteristic even though a contact state of connection parts of waveguides with each other becomes unstable.SOLUTION: A continuous waveguide 6 is configured by overlapping a multilayer dielectric substrate 1 with a first waveguide 1a formed at a central part on a metal plate 2 with a second waveguide 2a formed to face the first waveguide 1a. In such a case, a rectangular opening 8 of a conductor pattern 5 formed on the surface (lower part of drawing) of the multilayer dielectric substrate 1 is provided at the position being approximately λ/4 (λ: free space wavelength of transmission wave) from an E surface edge of an inner wall conductor 9 formed in the first waveguide 1a. Further, a dielectric transmission path 10 with a short-circuited tip having the length of λg/4 (λg: effective wavelength of transmission wave in multilayer dielectric substrate 1) is provided between the conductor pattern 5a and an inner layer conductor 4 of the multilayer dielectric substrate 1 so that the transmission path is in parallel with the inner layer conductor 4. Thus, a stabler choke flange structure is achieved.

Description

  The present invention relates to a waveguide connection structure mainly for transmitting high-frequency signals such as microwaves and millimeter waves, and more particularly, to a waveguide choke flange formed in the stacking direction of a multilayer dielectric substrate and its manufacture. Regarding the method.

  Electrical contact at the connection between the waveguide (first waveguide) formed in the stacking direction of the multilayer dielectric substrate and the waveguide (second waveguide) formed on the metal plate The choke flange is used for the connection portion of the waveguide for the purpose of stabilizing the noise and preventing the reflection of the electromagnetic wave, the passage loss deterioration, the leakage, and the like at the connection portion. In this way, the choke flange is used for the connection portion of the waveguide, and the first waveguide and the second waveguide are electrically connected to keep both the waveguides at the same potential. The transmission characteristics of a high-frequency signal passing through a waveguide in which a plurality of waveguides are connected in series can be stabilized.

  As a technology related to such a waveguide connection structure, in addition to a general choke flange structure, a magnetic domain wall (open in the standing wave) formed by a conductor pattern end is used to connect a multilayer dielectric substrate and a metal plate. A technology for constructing a choke flange that suppresses a parallel plate mode transmitted therebetween and short-circuits the E-plane end of the waveguide is disclosed (see Patent Document 1). According to this technology, low-loss waveguide connection characteristics with little signal leakage at the waveguide connection surface can be obtained, and high-order mode resonance that has occurred in the past when the connection portion of the waveguide is displaced. It is possible to prevent the connection characteristics from being deteriorated. Furthermore, regardless of the contact / non-contact state of the waveguide portion of the connection portion between the first waveguide formed on the multilayer dielectric substrate and the second waveguide formed on the metal plate Therefore, it is possible to stabilize the transmission characteristic of the high frequency signal in the waveguide.

  As a choke flange having such a structure, for example, those shown in FIGS. 7 and 8 are generally known. 7 is a cross-sectional view showing a conventional waveguide connection structure, and FIG. 8 is a plan view of a conductor pattern portion (conductor pattern) of the waveguide shown in FIG. 7 is a cross-sectional view of a surface where a multilayer dielectric substrate and a metal plate are in contact with each other in a choke flange of a conventional waveguide, and FIG. 8 is a portion of the multilayer dielectric substrate in contact with the metal plate in FIG. FIG. In other words, FIG. 7 is a cross-sectional view taken along the line AA in FIG.

  As shown in FIG. 7, the first waveguide 31 a formed in the stacking direction in the central portion of the multilayer dielectric substrate 31 and the first waveguide 31 a in the thickness direction in the central portion of the metal plate 32 are opposed to each other. The second waveguide 32a formed as described above is connected to each other to form a continuous waveguide 36.

  The multilayer dielectric substrate 31 is configured by alternately stacking dielectrics 33 and inner layer conductors 34. In addition, conductor patterns 35a are formed on both sides of the first waveguide 31a on a part of the surface side of the multilayer dielectric substrate 31 (lower side in FIG. 7). Is connected to the inner wall conductor 39 of the waveguide 31a. A back conductor 35b is formed from the inner wall conductor 39 to the back side of the multilayer dielectric substrate 31 (upper side in FIG. 7).

  Also, as shown in FIG. 8, the conductor pattern 35a on both sides of the first waveguide 31a formed on the surface side of the multilayer dielectric substrate 31 is integrated on both sides of the opening region of the first waveguide 31a. Connected. More specifically, as shown in FIG. 7, each conductor pattern 35a on both sides of the opening region of the first waveguide 31a has an opening 38 in a portion where the conductor is notched. Therefore, the dielectric 33 is exposed at the opening 38. Further, as shown in FIG. 8, the planar shape of the conductor pattern 35a is formed on the surface of the multilayer dielectric substrate 31 so as to surround the opening region and the opening 38 of the first waveguide 31a.

  Further, as shown in FIG. 7, through holes 37 are formed in the stacking direction of the multilayer dielectric substrate 31 from the conductor patterns 35a on both sides of the opening region of the first waveguide 31a. As shown in FIG. 8, a large number of through holes 37 are arranged on both sides of the opening 38 surrounded by the conductor pattern 35a. The metal plate 32 is shown as a single plate in FIG. 7, but a plurality of metal plates may be stacked.

  In the configuration of the choke flange as shown in FIG. 8, the end of the E surface of each opening 38 surrounded by the conductor pattern 35a (the end on the long side inside the opening 38 in FIG. 8) is the first waveguide. The tube 31a is formed at a position λ / 4 (λ: free space wavelength of the transmission wave) from the E-plane end (longitudinal end) of the tube 31a, and is longer than the long side of the first waveguide 31a and less than λ. have. Furthermore, as shown in FIG. 7, in the stacking direction of the multilayer dielectric substrate 31, a short-circuited dielectric transmission line 41 having a length of λg / 4 (λg: wavelength of a transmission wave in the multilayer dielectric substrate) is provided. Is formed.

  In such a choke flange structure, a warp or the like of the multilayer dielectric substrate 31 causes a gap in the connection portion between the conductor pattern 35a of the multilayer dielectric substrate 31 and the metal plate 32, so that the first waveguide 31a and the first waveguide 31 The second waveguide 32a may not be in electrical contact. However, in the choke flange having the structure as shown in FIG. 7 and FIG. At the opening 38 at a position separated by 4, the tip end portion of the dielectric transmission path 41 is opened. Further, since the distance from the end face of the opening 38 to the end of the E plane which is the long side end of the first waveguide 31a is λ / 4, the E waveguide end of the first waveguide 31a is also short-circuited. Become.

  That is, the first waveguide 31a of the multilayer dielectric substrate 31 has a length of λg / 4 in the stacking direction of the multilayer dielectric substrate 31, and the first waveguide from the end face of the opening 38. The choke flange structure is provided with a short-circuited dielectric transmission line 41 having a length of λ / 4 up to the end of the E surface of 31a. Therefore, even when the electrical contact between the multilayer dielectric substrate 31 and the metal plate 32 is unstable, the short circuit state at the E-plane end of the first waveguide 31a is maintained, so that the waveguide 36 Unnecessary leakage of electromagnetic waves from the connection portion (that is, the connection portion between the first waveguide 31a and the second waveguide 32a) can be reduced, or transmission loss can be reduced.

  In addition, as a related technique, a technique is also disclosed in which each waveguide formed on a plurality of waveguide plates is satisfactorily connected in the same plane to obtain good signal passing characteristics in the waveguide. (See Patent Document 2). According to this technique, the choke structure is formed at a position offset from the waveguide end of each long waveguide by approximately 1/4 (that is, λ / 4) of the free space propagation wavelength λ at the signal frequency. As a result, it is possible to obtain good passing, reflection, and isolation characteristics of a high-frequency signal. That is, a choke structure in which a trench having a width and depth of approximately λ / 4 and a length longer than the long side of the waveguide is formed at a position approximately λ / 4 away from the waveguide end of the long side of the waveguide. . As a result, resonance in the signal band transmitted through the waveguide can be avoided and coupling between adjacent waveguides can be suppressed, so that excellent passing, reflection, and isolation characteristics can be realized. .

  Furthermore, as a related technique, a technique of a dielectric waveguide line in which a waveguide is formed on a dielectric substrate in which a dielectric layer and a main conductor layer are laminated is also disclosed (for example, see Patent Document 3). . According to this technique, a dielectric waveguide line is formed in a region surrounded by two rows of via hole groups formed so as to electrically connect the main conductor layers, and one of the main conductor layers or Slot holes are formed in both. As a result, it is possible to easily electromagnetically couple with other high-frequency transmission lines (dielectric waveguide lines), so that it is possible to realize good transmission of high-frequency signals from microwaves to millimeter waves.

JP 2008-113318 A JP 2003-188601 A Japanese Patent Laid-Open No. 10-107518

  However, in the structure of the choke flange formed in the stacking direction in the waveguide of the conventional multilayer dielectric substrate as described above and the waveguide of the multilayer dielectric substrate described in Patent Document 1, the multilayer dielectric substrate If the thickness in the stacking direction is not stable, the length of λg / 4 cannot be accurately obtained in the stacking direction of the multilayer dielectric substrate, and the choke characteristics may not be stabilized. As a result, good connection characteristics cannot be obtained at the connection portion between the first waveguide formed on the multilayer dielectric substrate and the second waveguide formed on the metal plate, and the high frequency in the waveguide is not obtained. Signal transmission may become unstable. Further, in the frequency band of the signal wave where the thickness of the multilayer dielectric substrate in the stacking direction is less than λg / 4, the short-circuit characteristic between the waveguides by the choke flange cannot be realized.

  Also, in the choke flange structure in which the waveguide is formed on the waveguide plate described in Patent Document 2, if the thickness of the waveguide plate is not stable, a trench having a depth of λ / 4 is formed accurately. The choke characteristics may not be stabilized. As a result, as described above, good connection characteristics cannot be obtained at the connection between the waveguides, and transmission of high-frequency signals in the waveguides may become unstable.

  Furthermore, in the technique of the dielectric waveguide line of Patent Document 3, a high-frequency signal can be satisfactorily transmitted by electromagnetically coupling a plurality of dielectric waveguide lines. This does not realize good connection characteristics between the waveguides. Therefore, the present invention cannot be applied to a technology aimed at stabilizing the connection characteristics of the waveguide by improving the structure of the choke flange of the waveguide formed in the stacking direction of the multilayer dielectric substrate.

  The present invention has been made in view of such a problem, and even if the contact state of the connection portion between the waveguides becomes unstable, the characteristics of the choke are stabilized and a good signal transmission characteristic is obtained. It is an object of the present invention to provide a choke flange for a waveguide and a method for manufacturing the same.

  In order to achieve the above object, a choke flange of a waveguide according to the present invention includes a first waveguide formed in the stacking direction of a multilayer dielectric substrate and a second waveguide formed in a metal plate. Is a choke flange of the waveguide that connects to the metal plate, and is approximately λ / 4 (λ: free space of the transmission wave) from the E surface end of the first waveguide in the surface region of the multilayer dielectric substrate in contact with the metal plate Between the conductor pattern and the inner layer conductor of the multilayer dielectric substrate, and the transmission path is formed in a direction parallel to the inner layer conductor. and a short-circuited dielectric transmission line having a length of λg: effective wavelength of transmission wave in the multilayer dielectric substrate.

  In addition, the choke flange of the waveguide according to the present invention is a waveguide that connects the first waveguide formed in the stacking direction of the multilayer dielectric substrate and the second waveguide formed on the metal plate. It is a choke flange of a tube, and is rectangular at a position of approximately λ / 4 (λ: free space wavelength of transmission wave) from the E-plane end of the first waveguide in the surface region of the multilayer dielectric substrate in contact with the metal plate A part of the transmission path is formed in the stacking direction of the multilayer dielectric substrate between the conductor pattern in which the openings are formed and the conductor pattern and the inner layer conductor of the multilayer dielectric substrate, and the remaining transmission path is the inner layer conductor. And a short-circuited dielectric transmission line having a length of approximately λg / 4 (λg: effective wavelength of the transmission wave in the multilayer dielectric substrate) formed in a direction parallel to the dielectric layer. .

  The present invention can also provide a method for manufacturing a waveguide choke flange. That is, a method for manufacturing a choke flange of a waveguide for connecting a first waveguide formed in a stacking direction of a multilayer dielectric substrate and a second waveguide formed on a metal plate, the method comprising: In the surface region of the multilayer dielectric substrate in contact with the plate, a conductor pattern having a rectangular opening at a position of approximately λ / 4 (λ: free space wavelength of the transmission wave) from the E-plane end of the first waveguide Between the first step to be formed and the conductor pattern and the inner layer conductor of the multilayer dielectric substrate, the transmission path is approximately λg / 4 (λg: transmission wave in the multilayer dielectric substrate) in a direction parallel to the inner layer conductor. It is also possible to provide a method for manufacturing a choke flange of a waveguide, including a second step of forming a short-circuited dielectric transmission line having a length of (effective wavelength).

  The present invention can also provide another method for manufacturing a choke flange of a waveguide. That is, a method for manufacturing a choke flange of a waveguide for connecting a first waveguide formed in a stacking direction of a multilayer dielectric substrate and a second waveguide formed on a metal plate, the method comprising: In the surface region of the multilayer dielectric substrate in contact with the plate, a conductor pattern having a rectangular opening at a position of approximately λ / 4 (λ: free space wavelength of the transmission wave) from the E-plane end of the first waveguide A first step of forming, a second step of forming a part of the transmission path in the stacking direction of the multilayer dielectric substrate between the conductor pattern and the inner layer conductor of the multilayer dielectric substrate, and the conductor pattern and the multilayer dielectric. The total transmission path is approximately λg / 4 (λg: effective wavelength of transmission wave in the multilayer dielectric substrate) between the inner layer conductors of the body substrate and the tip is short-circuited. The remaining transmission path is formed in a direction parallel to the inner layer conductor. Method for producing a choke flange waveguide comprising a third step may be provided.

  The choke flange of the waveguide according to the present invention is not provided with a dielectric transmission line in the stacking direction of the multilayer dielectric substrate as in the conventional choke flange, but is dielectric in the direction parallel to the inner layer conductor of the multilayer dielectric substrate. A body transmission line is formed. The dielectric transmission line is formed so that the electrical length is approximately λg / 4. Therefore, even when the thickness of the multilayer dielectric substrate in the stacking direction is not stable, the dielectric transmission line can be maintained at a length of approximately λg / 4. As a result, even when the thickness of the multilayer dielectric substrate in the stacking direction is not stable, the first waveguide and the second waveguide are kept at the same potential, and good choke flange characteristics are ensured in the waveguide. High-frequency signal transmission characteristics can be stabilized. Further, an electrically stable waveguide connection structure can be realized even in a frequency band where the thickness of the multilayer dielectric substrate is less than λg / 4.

1 is a cross-sectional view of a choke flange of a multilayer dielectric substrate according to a first embodiment of the present invention. It is BB sectional drawing of FIG. It is the top view which planarly viewed the multilayer dielectric substrate from the CC plane of FIG. It is sectional drawing of the choke flange of the multilayer dielectric substrate which concerns on 2nd Embodiment of this invention. It is BB sectional drawing of FIG. It is the top view which planarly viewed the multilayer dielectric substrate from the CC plane of FIG. It is sectional drawing which shows the connection structure of the conventional waveguide. It is the top view which planarly viewed the conductor pattern part (conductor pattern) of the waveguide shown in FIG.

  The structure of the choke flange of the waveguide using the multilayer dielectric substrate according to the present invention is such that the multilayer dielectric is located at a position λ / 4 away from the E-plane (electric field plane) end of the inner wall conductor of the waveguide. An opening is provided in the conductor pattern formed on the surface layer of the substrate. Furthermore, a dielectric transmission line whose one end is short-circuited is formed in a direction parallel to the inner layer conductor of the multilayer dielectric substrate, and the electrical length of the dielectric transmission line is λg / 4. Hereinafter, several embodiments of the choke flange structure of the waveguide according to the present invention will be described in detail with reference to the drawings. In all the drawings for explaining the embodiments, the same elements are denoted by the same reference symbols in principle, and the repeated explanation thereof is omitted.

<< First Embodiment >>
First, a choke flange of a waveguide using the multilayer dielectric substrate according to the first embodiment of the present invention will be described. 1 is a cross-sectional view of a choke flange of a multilayer dielectric substrate according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line BB of FIG. 1, and FIG. 3 is a CC plane of FIG. FIG. 3 is a plan view of a multilayer dielectric substrate viewed from above. That is, FIG. 1 is a cross-sectional view of a surface where a multilayer dielectric substrate and a metal plate are in contact with each other in the choke flange of the waveguide according to the first embodiment of the present invention, and FIG. 2 is a multilayer dielectric shown in FIG. FIG. 3 is a plan view showing an inner layer of a dielectric portion in the body substrate, and FIG. 3 is a plan view of the portion of the multilayer dielectric substrate in contact with the metal plate in FIG. Such a structure is applied to a connection between a hollow waveguide formed on a multilayer dielectric substrate constituting a microwave or millimeter wave band circuit and a metal plate or another module.

  As shown in FIG. 1, the first waveguide 1a formed in the stacking direction in the central portion of the multilayer dielectric substrate 1 and the first waveguide 1a in the thickness direction in the central portion of the metal plate 2 are opposed to each other. The second waveguide 2a formed as described above is connected to each other to form a single continuous waveguide 6.

  The multilayer dielectric substrate 1 is configured by alternately stacking dielectrics 3 and inner layer conductors 4. In addition, conductor patterns 5a are formed on both sides of the first waveguide 1a on a part of the surface side of the multilayer dielectric substrate 1 (lower side in FIG. 1). Is connected to the inner wall conductor 9 of the waveguide 1a. A back conductor 5b is formed from the inner wall conductor 9 to the back side of the multilayer dielectric substrate 1 (upper side in FIG. 1).

  Further, as shown in FIG. 3, the conductor pattern 5a on both sides of the opening region of the first waveguide 1a formed on the surface side of the multilayer dielectric substrate 1 is formed in the opening region of the first waveguide 1a. They are connected together on both sides. More specifically, as shown in FIG. 1, each conductor pattern 5a on both sides of the opening region of the first waveguide 1a has an opening 8 in a portion where the conductor is cut out. Therefore, the dielectric 3 is exposed at the opening 8. Further, as shown in FIG. 3, the planar shape of the conductor pattern 5a is formed on the surface of the multilayer dielectric substrate 1 so as to surround the opening region and the opening 8 of the first waveguide 1a.

  Further, as shown in FIG. 1, through-holes 7 are formed in the stacking direction of the multilayer dielectric substrate 1 from the conductor patterns 5a on both sides of the opening region of the first waveguide 1a. As shown in FIG. 3, the through holes 7 are formed so as to surround the opening 8 in a shape biased toward the outer peripheral side of the multilayer dielectric substrate 1. The metal plate 2 is shown as a single plate in FIG. 1, but a plurality of metal plates may be joined.

  Further, as shown in FIG. 2, the inner layer structure of the dielectric portion of the multilayer dielectric substrate 1 is formed with an opening region of the first waveguide 1a having a rectangular cross section in the central portion of the substrate of the dielectric 3. An inner wall conductor 9 is formed on the inner wall of the first waveguide 1a. Further, through holes 7 are arranged on both sides of the opening region of the first waveguide 1a so as to surround an opening (not shown).

  That is, in the stacking direction of the multilayer dielectric substrate 1, as shown in FIGS. 1 and 3, the first waveguide 1 a which is a rectangular hollow waveguide whose inside is covered with the inner wall conductor 9 is formed. ing. The first waveguide 1a of the multilayer dielectric substrate 1 and the second waveguide 2a of the metal plate 2 on the surface where the conductor pattern 5a that is the surface conductor of the multilayer dielectric substrate 1 and the metal plate 2 are in contact with each other. Are connected to form a continuous waveguide 6. A dielectric transmission line 10 having one end opened at the opening 8 and the other end short-circuited is formed on both sides of the opening region of the first waveguide 1a.

  In the configuration of the choke flange as shown in FIG. 3, the end of the E surface of each opening 8 surrounded by the conductor pattern 5a (the longitudinal end on the inside of the opening 8 in FIG. 3) is the first waveguide. An opening region of the first waveguide 1a is formed at a position λ / 4 (λ: free space wavelength of the transmission wave) from the E-plane end of the tube 1a (longitudinal end of the first waveguide 1a). Longer than the long side and less than λ.

  Further, as shown in FIG. 1, the multilayer dielectric substrate 1 has a dielectric transmission line 10 having an opening 8 as one end, and an inner layer conductor 4, a conductor pattern 5a, and four sides of the multilayer dielectric substrate 1 are through-holes. 7 is formed in a state surrounded by 7. Here, the length of the side parallel to the E end face of the first waveguide 1a of the dielectric transmission line 10 is the same as the length of the opening 8, and the E of the first waveguide 1a. The length in the direction perpendicular to the end face (that is, the direction parallel to the inner layer conductor 4 of the multilayer dielectric substrate 1) is λg / 4 (λg: wavelength of the transmission wave in the multilayer dielectric substrate).

  In this way, the choke flange structure is constituted by the dielectric transmission line 10 having the shape in which the opening 8 is opened and the tip is short-circuited by the inner layer conductor 4, the conductor pattern 5 a, and the through hole 7. By adopting such a choke flange structure, even when a gap is generated in the connecting portion between the multilayer dielectric substrate 1 and the metal plate 2 and electrical contact is not established, the first waveguide 1a and the second waveguide 1 It is possible to maintain an electrical connection with the waveguide 2a.

  That is, the tip of the dielectric transmission line 10 provided on the multilayer dielectric substrate 1 having such a choke flange structure is in a short-circuited state, and is in an open state at the opening 8 that is λg / 4 away from the short-circuited position. . Further, since the distance from the opening 8 to the end of the E plane of the first waveguide 1a is λ / 4, the end of the E plane of the first waveguide 1a is short-circuited. Therefore, even when the electrical contact between the multilayer dielectric substrate 1 and the metal plate 2 is unstable, the short-circuit state at the E-plane end of the first waveguide 1a is maintained, so that the waveguide 6 Thus, unnecessary leakage of electromagnetic waves from the connection portion (that is, the connection portion between the first waveguide 1a and the second waveguide 2a) can be reduced, or transmission loss can be reduced.

  Furthermore, in the choke flange structure according to the present embodiment, the dielectric transmission path 10 is provided in the direction parallel to the substrate layer of the multilayer dielectric substrate 1 instead of providing the dielectric transmission path 10 in the stacking direction of the multilayer dielectric substrate 1. ing. Therefore, even when the thickness of the multilayer dielectric substrate 1 is unstable, the length of the dielectric transmission line 10 can be maintained at λg / 4, and the characteristics of the choke flange can be stabilized. As a result, good connection characteristics can be obtained at the connection portion between the first waveguide 1a formed on the multilayer dielectric substrate 1 and the second waveguide 2a formed on the metal plate 2, and the inside of the waveguide can be obtained. It is possible to stabilize the transmission of high-frequency signals in

  In other words, the choke flange of the waveguide according to the present embodiment has a structure in which the dielectric transmission line 10 is provided in a direction parallel to the conductor layer of the multilayer dielectric substrate 1. The electrical length of the dielectric transmission line 10 is λg / 4, and one end is open and the other end is short-circuited. As a result, in the waveguide connection structure between the multilayer dielectric substrate 1 and the metal plate 2, the multilayer dielectric substrate 1 is stable even in a frequency band in which the thickness in the stacking direction of the multilayer dielectric substrate 1 is less than λg / 4, for example. The stable choke flange structure can be maintained and stable transmission characteristics can be maintained.

<< Second Embodiment >>
Next, the choke flange of the waveguide according to the second embodiment of the present invention will be described, but the description overlapping with the first embodiment will be omitted. 4 is a cross-sectional view of a choke flange of a multilayer dielectric substrate according to a second embodiment of the present invention, FIG. 5 is a cross-sectional view taken along the line BB of FIG. 4, and FIG. FIG. 3 is a plan view of a multilayer dielectric substrate viewed from above. That is, FIG. 4 is a cross-sectional view of the surface where the multilayer dielectric substrate and the metal plate are in contact with each other in the choke flange of the waveguide according to the second embodiment of the present invention, and FIG. 5 is the multilayer dielectric shown in FIG. FIG. 6 is a plan view showing an inner layer of a dielectric portion in the body substrate, and FIG. 6 is a plan view of the multilayer dielectric substrate in a portion in contact with the metal plate in FIG.

  The difference from the first embodiment is that the dielectric transmission line 20 is constituted by the conductor pattern 5 a, the plurality of inner layer conductors 4, and the through holes 7. The length of the side parallel to the E-plane end of the first waveguide 1a of the dielectric transmission line 20 is the same as the length of the opening 8 as in the first embodiment. A part of the dielectric transmission line 20 is formed from the opening 8 in the stacking direction of the multilayer dielectric substrate 1 and then connected to the part of the dielectric transmission line 20 formed between the inner layer conductors 4. Even in this case, the total electrical length of the dielectric transmission line 20 from the opening 8 to the through hole 7 of the transmission line formed between the inner layer conductors 4 is λg / 4.

  Thus, also in the structure of the choke flange by the dielectric transmission line 20 formed by sandwiching the inner layer conductors 4 of the multilayer dielectric substrate 1, the first waveguide 1a and the first choke flange are formed in the same manner as in the first embodiment. Even when the electrical contact with the second waveguide 2 a is unstable, the first waveguide 1 a and the second waveguide 2 a can be short-circuited by the action of the dielectric transmission path 20. Therefore, even if the first waveguide 1a of the multilayer dielectric substrate 1 and the second waveguide 2a of the metal plate 2 are poorly connected, unnecessary leakage from the waveguide connection portion can be reduced or transmitted. Loss can be reduced.

  According to the choke flange of the waveguide according to the present invention, it can be effectively used for a long-distance transmission line in which a large number of waveguides are connected in series.

DESCRIPTION OF SYMBOLS 1, 31 Multilayer dielectric substrate 1a, 31a 1st waveguide 2, 32 Metal plate 2a, 32a 2nd waveguide 3, 33 Dielectric 4, 34 Inner layer conductor 5a, 35a Conductor pattern 5b, 35b Back surface conductor 6, 36 Waveguide 7, 37 Through hole 8, 38 Opening 9, 39 Inner wall conductor 10, 20, 41 Dielectric transmission line

Claims (8)

A choke flange of a waveguide connecting a first waveguide formed in a stacking direction of a multilayer dielectric substrate and a second waveguide formed on a metal plate,
In the surface region of the multilayer dielectric substrate in contact with the metal plate, a rectangular opening is formed at a position of approximately λ / 4 (λ: free space wavelength of transmission wave) from the E-plane end of the first waveguide. Conductor pattern,
Between the conductor pattern and the inner layer conductor of the multilayer dielectric substrate, a transmission path is formed in a direction parallel to the inner layer conductor, approximately λg / 4 (λg: effective wavelength of the transmission wave in the multilayer dielectric substrate) And a short-circuited dielectric transmission line having a length of). A choke flange of a waveguide connecting a first waveguide formed in a stacking direction of a multilayer dielectric substrate and a second waveguide formed on a metal plate,
In the surface region of the multilayer dielectric substrate in contact with the metal plate, a rectangular opening is formed at a position of approximately λ / 4 (λ: free space wavelength of transmission wave) from the E-plane end of the first waveguide. Conductor pattern,
Between the conductor pattern and the inner layer conductor of the multilayer dielectric substrate, a part of the transmission path is formed in the stacking direction of the multilayer dielectric substrate, and the remaining part of the transmission path is formed in a direction parallel to the inner layer conductor. And a short-circuited dielectric transmission line having a length of approximately λg / 4 (λg: effective wavelength of a transmission wave in the multilayer dielectric substrate).   2. The dielectric transmission path is formed by a dielectric surrounded by the conductor pattern, the inner layer conductor, and a through hole formed in the stacking direction of the multilayer dielectric substrate. The choke flange of the waveguide according to 2.   The choke flange of a waveguide according to claim 3, wherein the dielectric transmission line has a plurality of through holes arranged in four directions. A method for manufacturing a choke flange of a waveguide for connecting a first waveguide formed in a stacking direction of a multilayer dielectric substrate and a second waveguide formed on a metal plate,
In the surface region of the multilayer dielectric substrate in contact with the metal plate, a rectangular opening is provided at a position of approximately λ / 4 (λ: free space wavelength of transmission wave) from the E-plane end of the first waveguide. A first step of forming a conductive pattern;
Between the conductor pattern and the inner layer conductor of the multilayer dielectric substrate, the length of the transmission path is approximately λg / 4 (λg: effective wavelength of the transmission wave in the multilayer dielectric substrate) in a direction parallel to the inner layer conductor. And a second step of forming a short-circuited dielectric transmission line having a length. A method for manufacturing a choke flange of a waveguide. A method for manufacturing a choke flange of a waveguide for connecting a first waveguide formed in a stacking direction of a multilayer dielectric substrate and a second waveguide formed on a metal plate,
In the surface region of the multilayer dielectric substrate in contact with the metal plate, a rectangular opening is provided at a position of approximately λ / 4 (λ: free space wavelength of transmission wave) from the E-plane end of the first waveguide. A first step of forming a conductive pattern;
A second step of forming a part of the transmission path in the stacking direction of the multilayer dielectric substrate between the conductor pattern and the inner layer conductor of the multilayer dielectric substrate;
The total transmission path between the conductor pattern and the inner layer conductor of the multilayer dielectric substrate has a length of approximately λg / 4 (λg: effective wavelength of the transmission wave in the multilayer dielectric substrate), and the tip is And a third step of forming a remaining transmission path in a direction parallel to the inner layer conductor so as to be in a short-circuited state.   6. The dielectric transmission path is formed by a dielectric surrounded by the conductor pattern, the inner layer conductor, and a through hole formed in the stacking direction of the multilayer dielectric substrate. A method for manufacturing a choke flange of a waveguide according to claim 6.   8. The method for manufacturing a choke flange of a waveguide according to claim 7, wherein a plurality of through holes are arranged in four directions of the dielectric transmission line.

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