JP5990533B2 - シート状電池のリペア装置 - Google Patents
シート状電池のリペア装置 Download PDFInfo
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- JP5990533B2 JP5990533B2 JP2013544005A JP2013544005A JP5990533B2 JP 5990533 B2 JP5990533 B2 JP 5990533B2 JP 2013544005 A JP2013544005 A JP 2013544005A JP 2013544005 A JP2013544005 A JP 2013544005A JP 5990533 B2 JP5990533 B2 JP 5990533B2
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- 239000004065 semiconductor Substances 0.000 claims description 29
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- 238000000034 method Methods 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
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- 238000000197 pyrolysis Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- -1 Nickel metal hydride Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
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- 239000011229 interlayer Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
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- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/50—Current conducting connections for cells or batteries
- H01M50/572—Means for preventing undesired use or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/4242—Regeneration of electrolyte or reactants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/48—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
- H01M10/482—Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte for several batteries or cells simultaneously or sequentially
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/53135—Storage cell or battery
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Secondary Cells (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
- Photovoltaic Devices (AREA)
Description
以下、本発明によるシート状電池のリペア装置の一実施形態を、図面を参照しながら説明する。
図1は、リペア対象であるシート状電池の積層構造を示す説明図である。
量子電池の動作メカニズムは未だ完全には解明されていないが、等価的にはダイオードの接合部にあたる部分に電子を蓄える中間的な準位を持つ構造になっていると考えられている。
量子電池などのシート状(平行平板構造)のデバイスでは、ピンホールの発生に起因して、層間が短絡したり、異物や不要な空隙が形成されたりする欠陥が生じることがある。また、量子電池の充電層の成膜には塗布熱分解法を適用しており、塗布熱分解法で成膜された充電層は、充電層及びその界面に原子と電子の結合が不充分な分子が存在する恐れもある。
次に、実施形態のリペア装置の構成を説明する。図3は、実施形態のリペア装置の構成を示すブロック図である。
図4は、逆バイアス印加におけるリペアを模式的に表している。逆バイアス印加によるリペアも、IモードリペアとVモードリペアとを適用でき、図4は、IモードリペアをVモードリペアより先に実行した場合を示している。
図7は、順バイアス印加におけるリペアを模式的に表している。順バイアス印加によるリペアも、IモードリペアとVモードリペアとを適用でき、図7は、IモードリペアをVモードリペアより先に実行した場合を示している。
上記実施形態によれば、半導体特性を持つシート状電池の欠陥を適切に修復、無害化することができる。
本発明は、上記実施形態のものに限定されない。以下に、変形実施形態をいくつか例示する。
Claims (2)
- 蓄電層が正電極及び負電極の層で挟まれたシート状電池であって、少なくとも上記蓄電
層が半導体特性を有するシート状電池をリペアする、シート状電池のリペア装置において、
上記正電極及び上記負電極間に電気的刺激を印加する電気的刺激源と、
上記電気的刺激の印加時における上記シート状電池の電気特性を測定する電気特性測定手段と、
測定された電気特性をも参酌しながら、上記電気的刺激源による電気的刺激の値を指示する制御手段と
を有し、
上記電気的刺激源は、上記半導体特性における逆バイアス方向の電流刺激、上記半導体特性における逆バイアス方向の電圧刺激、上記半導体特性における順バイアス方向の電流刺激、上記半導体特性における順バイアス方向の電圧刺激のうちの2以上に対応できるものであり、
上記制御手段は、上記電気的刺激源が対応できる全種類の電気的刺激を順次、上記正電極及び上記負電極間に印加させるように制御する
ことを特徴とするシート状電池のリペア装置。 - 上記シート状電池を放電させて空充電状態に変化させる空充電化手段を備えると共に、
上記制御手段は、電気的刺激の種類を切り換える際には、上記空充電化手段による動作を実行させた後、新たな種類の電気的刺激を、上記正電極及び上記負電極間に印加させる
ことを特徴とする請求項1に記載のシート状電池のリペア装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/076200 WO2013072988A1 (ja) | 2011-11-14 | 2011-11-14 | シート状電池のリペア装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013072988A1 JPWO2013072988A1 (ja) | 2015-04-02 |
JP5990533B2 true JP5990533B2 (ja) | 2016-09-14 |
Family
ID=48429102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013544005A Expired - Fee Related JP5990533B2 (ja) | 2011-11-14 | 2011-11-14 | シート状電池のリペア装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9799927B2 (ja) |
EP (1) | EP2782183B1 (ja) |
JP (1) | JP5990533B2 (ja) |
KR (1) | KR101484055B1 (ja) |
CN (1) | CN103959548B (ja) |
CA (1) | CA2854909C (ja) |
TW (1) | TWI514601B (ja) |
WO (1) | WO2013072988A1 (ja) |
Family Cites Families (19)
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US4464823A (en) * | 1982-10-21 | 1984-08-14 | Energy Conversion Devices, Inc. | Method for eliminating short and latent short circuit current paths in photovoltaic devices |
AU2042183A (en) * | 1983-08-03 | 1985-02-07 | Energy Conversion Devices Inc. | Eliminating short circuits in photovoltaic devices |
US4806496A (en) | 1986-01-29 | 1989-02-21 | Semiconductor Energy Laboratory Co. Ltd. | Method for manufacturing photoelectric conversion devices |
JPS6388869A (ja) | 1986-10-01 | 1988-04-19 | Kanegafuchi Chem Ind Co Ltd | アモルファス太陽電池のピンホール消滅装置 |
JPH053333A (ja) * | 1991-06-25 | 1993-01-08 | Canon Inc | 太陽電池のリペア方法 |
JP3740618B2 (ja) * | 1996-06-17 | 2006-02-01 | 株式会社カネカ | 太陽電池の短絡部除去方法及び該短絡部除去装置 |
JPH11204816A (ja) | 1998-01-20 | 1999-07-30 | Kanegafuchi Chem Ind Co Ltd | 半導体薄膜光電変換装置の製造方法 |
JP3050546B1 (ja) | 1999-03-24 | 2000-06-12 | 鐘淵化学工業株式会社 | 太陽電池の短絡部除去方法 |
AU766466B2 (en) | 1999-05-14 | 2003-10-16 | Kaneka Corporation | Reverse biasing apparatus for solar battery module |
JP4627575B2 (ja) | 1999-08-12 | 2011-02-09 | 株式会社カネカ | 太陽電池の短絡部除去方法 |
JP3143616B2 (ja) | 1999-08-12 | 2001-03-07 | 鐘淵化学工業株式会社 | 太陽電池の短絡部除去方法 |
JP2003215190A (ja) | 2001-11-16 | 2003-07-30 | Hioki Ee Corp | ショート検出装置 |
JP4221479B2 (ja) * | 2002-05-09 | 2009-02-12 | 富士電機システムズ株式会社 | 薄膜太陽電池モジュールの製造方法 |
JP4887664B2 (ja) | 2005-05-17 | 2012-02-29 | ソニー株式会社 | 多孔質構造体の製造方法及び光電変換素子の製造方法 |
JP2006332469A (ja) | 2005-05-27 | 2006-12-07 | Peccell Technologies Inc | 光充電可能な積層型キャパシタ |
EP2078980B1 (en) | 2006-11-02 | 2019-01-09 | Guala Technology Co., Ltd. | Electric field sensing element and display device making use of the same |
JP5288368B2 (ja) | 2007-11-30 | 2013-09-11 | 独立行政法人物質・材料研究機構 | 太陽電池 |
JP5476641B2 (ja) | 2009-09-03 | 2014-04-23 | 株式会社日本マイクロニクス | 電池短絡部除去装置及び方法、並びに、電池短絡部除去電圧決定装置及び方法 |
US20120288968A1 (en) * | 2011-05-12 | 2012-11-15 | Ming-Teng Hsieh | Method for repairing a semiconductor structure having a current-leakage issue |
-
2011
- 2011-11-14 WO PCT/JP2011/076200 patent/WO2013072988A1/ja active Application Filing
- 2011-11-14 US US14/357,856 patent/US9799927B2/en not_active Expired - Fee Related
- 2011-11-14 EP EP11875625.3A patent/EP2782183B1/en not_active Not-in-force
- 2011-11-14 JP JP2013544005A patent/JP5990533B2/ja not_active Expired - Fee Related
- 2011-11-14 CA CA2854909A patent/CA2854909C/en not_active Expired - Fee Related
- 2011-11-14 CN CN201180074825.2A patent/CN103959548B/zh not_active Expired - Fee Related
- 2011-11-14 KR KR1020147011124A patent/KR101484055B1/ko active IP Right Grant
-
2012
- 2012-04-23 TW TW101114375A patent/TWI514601B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2854909C (en) | 2018-01-30 |
WO2013072988A1 (ja) | 2013-05-23 |
JPWO2013072988A1 (ja) | 2015-04-02 |
CN103959548A (zh) | 2014-07-30 |
TWI514601B (zh) | 2015-12-21 |
US20150000119A1 (en) | 2015-01-01 |
EP2782183A4 (en) | 2015-09-23 |
KR101484055B1 (ko) | 2015-01-20 |
KR20140082739A (ko) | 2014-07-02 |
TW201320368A (zh) | 2013-05-16 |
US9799927B2 (en) | 2017-10-24 |
EP2782183B1 (en) | 2019-11-13 |
CA2854909A1 (en) | 2013-05-23 |
CN103959548B (zh) | 2017-02-15 |
EP2782183A1 (en) | 2014-09-24 |
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