JP5988980B2 - 薄膜デバイスを分離したセルに分割するための方法及び装置 - Google Patents

薄膜デバイスを分離したセルに分割するための方法及び装置 Download PDF

Info

Publication number
JP5988980B2
JP5988980B2 JP2013529700A JP2013529700A JP5988980B2 JP 5988980 B2 JP5988980 B2 JP 5988980B2 JP 2013529700 A JP2013529700 A JP 2013529700A JP 2013529700 A JP2013529700 A JP 2013529700A JP 5988980 B2 JP5988980 B2 JP 5988980B2
Authority
JP
Japan
Prior art keywords
laser
head
layer
process head
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013529700A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013546160A5 (enExample
JP2013546160A (ja
Inventor
アダム・ノース・ブラントン
Original Assignee
エム−ソルヴ・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エム−ソルヴ・リミテッド filed Critical エム−ソルヴ・リミテッド
Publication of JP2013546160A publication Critical patent/JP2013546160A/ja
Publication of JP2013546160A5 publication Critical patent/JP2013546160A5/ja
Application granted granted Critical
Publication of JP5988980B2 publication Critical patent/JP5988980B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laser Beam Processing (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
JP2013529700A 2010-09-25 2011-09-16 薄膜デバイスを分離したセルに分割するための方法及び装置 Expired - Fee Related JP5988980B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1016172.7A GB2483922B (en) 2010-09-25 2010-09-25 Method and apparatus for dividing thin film device into separate cells
GB1016172.7 2010-09-25
PCT/GB2011/001352 WO2012038689A1 (en) 2010-09-25 2011-09-16 Method and apparatus for dividing thin film device into separate cells

Publications (3)

Publication Number Publication Date
JP2013546160A JP2013546160A (ja) 2013-12-26
JP2013546160A5 JP2013546160A5 (enExample) 2014-11-06
JP5988980B2 true JP5988980B2 (ja) 2016-09-07

Family

ID=43127985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013529700A Expired - Fee Related JP5988980B2 (ja) 2010-09-25 2011-09-16 薄膜デバイスを分離したセルに分割するための方法及び装置

Country Status (8)

Country Link
US (1) US9130094B2 (enExample)
EP (1) EP2619804A1 (enExample)
JP (1) JP5988980B2 (enExample)
KR (1) KR101786854B1 (enExample)
CN (1) CN103119731B (enExample)
GB (1) GB2483922B (enExample)
TW (1) TWI560017B (enExample)
WO (1) WO2012038689A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012205978A1 (de) * 2012-04-12 2013-10-17 Robert Bosch Gmbh Photovoltaische Dünnschichtsolarmodule sowie Verfahren zur Herstellung solcher Dünnschichtsolarmodule
WO2013189605A2 (en) * 2012-06-20 2013-12-27 Tel Solar Ag Laser scribing system
CN116154032A (zh) * 2021-11-19 2023-05-23 宁德时代新能源科技股份有限公司 用于制造太阳能电池的设备及制造太阳能电池的方法
US12242078B2 (en) * 2023-05-22 2025-03-04 Bradford T Hite Cross dichroic prism based multi band solar array

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3604917A1 (de) * 1986-02-17 1987-08-27 Messerschmitt Boelkow Blohm Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen
JP3091151B2 (ja) 1997-01-27 2000-09-25 三洋電機株式会社 集積型光起電力装置の製造方法
JPH11163499A (ja) * 1997-11-28 1999-06-18 Nitto Boseki Co Ltd プリント配線板の製造方法及びこの製造方法によるプリント配線板
JP4741045B2 (ja) * 1998-03-25 2011-08-03 セイコーエプソン株式会社 電気回路、その製造方法および電気回路製造装置
JP4168413B2 (ja) 1998-07-27 2008-10-22 シチズンホールディングス株式会社 太陽電池の製造方法
JP2000124488A (ja) * 1998-10-15 2000-04-28 Matsushita Electric Ind Co Ltd 薄膜太陽電池の製造方法
US6310281B1 (en) 2000-03-16 2001-10-30 Global Solar Energy, Inc. Thin-film, flexible photovoltaic module
US6491361B1 (en) * 2000-11-09 2002-12-10 Encad, Inc. Digital media cutter
US6559411B2 (en) 2001-08-10 2003-05-06 First Solar, Llc Method and apparatus for laser scribing glass sheet substrate coatings
JP2003318133A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、半導体チップの実装構造、半導体装置、発光装置、電気光学装置、電子機器、並びに非接触型カード媒体
US6690041B2 (en) 2002-05-14 2004-02-10 Global Solar Energy, Inc. Monolithically integrated diodes in thin-film photovoltaic devices
KR101119202B1 (ko) * 2005-02-07 2012-03-20 삼성전자주식회사 액적 형성 장치 및 방법, 박막 형성 방법 및 표시기판
TWI334649B (en) 2005-09-27 2010-12-11 Lg Chemical Ltd Method for forming buried contact electrode of semiconductor device having pn junction and optoelectronic semiconductor device using the same
US20070079866A1 (en) * 2005-10-07 2007-04-12 Applied Materials, Inc. System and method for making an improved thin film solar cell interconnect
GB0622232D0 (en) * 2006-11-08 2006-12-20 Rumsby Philip T Method and apparatus for laser beam alignment for solar panel scribing
US8716591B2 (en) * 2007-06-20 2014-05-06 Ascent Solar Technologies, Inc. Array of monolithically integrated thin film photovoltaic cells and associated methods
DE102007032283A1 (de) * 2007-07-11 2009-01-15 Stein, Wilhelm, Dr. Dünnschichtsolarzellen-Modul und Verfahren zu dessen Herstellung
EP2198367A1 (en) * 2007-08-31 2010-06-23 Applied Materials, Inc. Photovoltaic production line
GB0802289D0 (en) * 2008-02-07 2008-03-12 Rumsby Philip T Method and appartus for making a partially transparent solar panel
GB2458986B (en) * 2008-04-08 2012-05-30 M Solv Ltd Apparatus for patterning thin films on continuous flexible substrates
CN102047440A (zh) * 2008-07-04 2011-05-04 株式会社爱发科 太阳能电池单元的制造方法以及太阳能电池单元
US8563892B2 (en) * 2008-09-24 2013-10-22 Standex International Corporation Method and apparatus for laser engraving
GB2472608B (en) * 2009-08-12 2013-09-04 M Solv Ltd Method and Apparatus for making a solar panel that is partially transparent
GB2474665B (en) 2009-10-22 2011-10-12 M Solv Ltd Method and apparatus for dividing thin film device into separate cells
US8865569B2 (en) * 2009-10-22 2014-10-21 M-Solv Ltd. Method and apparatus for dividing thin film device into separate cells
US20110139755A1 (en) * 2009-11-03 2011-06-16 Applied Materials, Inc. Multi-wavelength laser-scribing tool
DE202011110969U1 (de) 2010-10-15 2017-11-16 Wilhelm Stein Dünnschichtfotovoltaikmodul
DE202011110968U1 (de) 2010-10-15 2017-11-16 Wilhelm Stein Dünnschichtfotovoltaikmodul
EP2761669A1 (de) 2011-09-27 2014-08-06 Wilhelm Stein Fotovoltaikmodul, verfahren und herstellungsanlage zur herstellung eines fotovoltaikmoduls

Also Published As

Publication number Publication date
WO2012038689A1 (en) 2012-03-29
GB201016172D0 (en) 2010-11-10
GB2483922B (en) 2013-11-20
KR101786854B1 (ko) 2017-10-18
TW201233483A (en) 2012-08-16
KR20130108593A (ko) 2013-10-04
GB2483922A (en) 2012-03-28
JP2013546160A (ja) 2013-12-26
US9130094B2 (en) 2015-09-08
CN103119731B (zh) 2016-10-26
EP2619804A1 (en) 2013-07-31
US20130210224A1 (en) 2013-08-15
CN103119731A (zh) 2013-05-22
TWI560017B (en) 2016-12-01

Similar Documents

Publication Publication Date Title
JP5608754B2 (ja) 薄膜デバイスを個別のセルに分割するための方法および装置
US8865569B2 (en) Method and apparatus for dividing thin film device into separate cells
JP6106168B2 (ja) 薄膜デバイスを個別のセルに分割する方法及び装置
EP2732470B1 (en) Method and apparatus for dividing thin film device into separate cells
JP5988980B2 (ja) 薄膜デバイスを分離したセルに分割するための方法及び装置
JP2013546160A5 (enExample)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140912

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140912

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150518

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150520

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150814

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150909

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160310

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160711

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160809

R150 Certificate of patent or registration of utility model

Ref document number: 5988980

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees