JP5986927B2 - 最新レーザ波長制御 - Google Patents
最新レーザ波長制御 Download PDFInfo
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- JP5986927B2 JP5986927B2 JP2012539934A JP2012539934A JP5986927B2 JP 5986927 B2 JP5986927 B2 JP 5986927B2 JP 2012539934 A JP2012539934 A JP 2012539934A JP 2012539934 A JP2012539934 A JP 2012539934A JP 5986927 B2 JP5986927 B2 JP 5986927B2
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- 238000005259 measurement Methods 0.000 claims description 90
- 238000010304 firing Methods 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 51
- 230000033001 locomotion Effects 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 13
- 238000004364 calculation method Methods 0.000 claims description 11
- 230000000737 periodic effect Effects 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 6
- 238000013507 mapping Methods 0.000 claims description 3
- 230000033764 rhythmic process Effects 0.000 claims description 2
- 238000004587 chromatography analysis Methods 0.000 claims 1
- 230000008569 process Effects 0.000 description 25
- 238000012545 processing Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 15
- 230000008859 change Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005295 random walk Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10038—Amplitude control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/136—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity
- H01S3/137—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity for stabilising of frequency
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/1305—Feedback control systems
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- Plasma & Fusion (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Lasers (AREA)
Description
ここで、x(t+T)は、初期状態x(t)よりT秒先んじた予測状態であり、eATは、線形システムの標準な状態遷移行列であり、Bは、標準入力行列である。
上述の方程式において、
・kは、レーザ発射イベントを示している。
・Iは、適切なサイズの恒等行列である(n行xn列、ここで、nは状態ベクトルxの要素数である)。
・Lkは、「新しいデータを信頼すること及び前の予測を信じること」の間の妥協点を捕捉する利得行列である。
・Ckは、予測状態から予測出力への標準的マッピング、例えば、y=Cxである。
・x(k/k)は、指標kでの最新データが与えられて更新された予測である。
・x(k/k−1)は、前のレーザ発射イベントk−1からのデータが与えられてレーザ発射指標kでの状態の「古い」予測である。
(C) Δu(mτc) = -Kx(mτc)
・mは、制御イベント(すなわち、電圧更新イベント)を示す。
・τcは、コントローラサンプル期間であり、従って、x(mτc)を(到来)電圧更新時の状態にする。
・Kは、制御エネルギ及び波長性能の加重和を最小にするために計算される状態フィードバック行列である。
(D) V(mτc) = V((m-1)τc) + Δu(mτc)
・V((m−1)τc)は、前の更新からのPZT制御信号である。
・Δu(mτc)は、方程式(C)の出力である。
・V(mτc)は、新しいPZT制御信号である。
前後関係が明確な時には、V(mτc)のような信号は、簡潔さを期すためにVmとして示すことになることに注意されたい。
402 計算制御部分
403 時間更新部分
430 粗い波長プリズム信号などの計算段階
445 判断ブロック
Claims (10)
- レーザ波長制御の方法であって、
前記レーザシステム内の主発振器チャンバの出力波長測定値を周期的に受信する段階と、
前記出力波長測定値の周期的な受信よりも頻繁にレーザシステム内のプリズムの位置の予測を周期的に行う段階と、
前記出力波長測定値が前記予測の周期内で受信されなかった場合に、前記プリズムの前記予測位置を使用して前記プリズムに対する制御電圧を制御コンピュータにおいて計算する段階と、
前記出力波長測定値が前記予測の周期内で受信された場合に、前記出力波長測定値を使用して前記プリズムの前記予測位置を更新し、該プリズムの該更新予測位置を使用して該プリズムに対する制御電圧を前記制御コンピュータにおいて計算する段階と、
前記計算制御電圧を前記制御コンピュータから前記プリズムを位置決めするための電子機器に出力する段階と、
を含む、方法。 - 前記プリズムの前記位置の前記予測を行う段階は、前記プリズムの移動のモデルを使用するものであり、前記モデルは、前記プリズムの物理的移動及び前記レーザシステム内の外乱に基づくものである、請求項1に記載の方法。
- レーザ波長制御の方法であって、
レーザシステム内の主発振器チャンバの出力波長測定値を周期的に受信する段階と、
前記出力波長測定値の周期的な受信よりも頻繁に前記レーザシステム内のプリズムの位置の予測を周期的に行う段階と、
前記出力波長測定値が前記予測の周期内で受信されなかった場合に、前記プリズムの前記予測位置を使用して該プリズムに対する制御電圧を制御コンピュータにおいて計算する段階と、
前記出力波長測定値が前記予測の周期内で受信された場合において、前記レーザが前記出力波長測定値を受信してから再び発射した場合に、前記出力波長測定値を使用して前のプリズム位置予測を更新し、前記更新された前のプリズム位置予測に基づいてプリズム位置予測の新しい予測を行い、かつ前記新しいプリズム位置予測を使用して前記プリズムに対する前記制御電圧を前記制御コンピュータにおいて計算する一方、前記レーザが前記出力波長測定値を受信してから再び発射しなかった場合に、前記出力波長測定値を使用して前記プリズムの前記予測位置を更新し、かつ前記更新プリズム位置予測を使用して前記プリズムに対する前記制御電圧を前記制御コンピュータにおいて計算する段階と、
前記計算制御電圧を前記制御コンピュータから前記プリズムを位置決めするための電子機器に出力する段階と、
を含む、方法。 - 前記プリズムの前記位置の前記予測を行う段階は、前記プリズムの移動のモデルを使用するものであり、前記モデルは、前記プリズムの物理的移動及び前記レーザシステム内の外乱に基づくものである、請求項5に記載の方法。
- プリズムコントローラ方法であって、
プリズムによって制御された主発振器チャンバの出力波長測定値を周期的に受信する段階と、
プリズム移動モデルを使用して前記出力波長測定値の周期的な受信よりも頻繁に前記プリズムの位置を周期的に予測する段階と、
前記出力波長測定値が前記予測の周期内で受信されなかった場合に、前記プリズムの前記予測位置を使用して前記プリズムに対する制御電圧を計算する段階と、
前記出力波長測定値が前記予測の周期内で受信された場合に、前記出力波長測定値を使用して前記プリズムの前記予測位置を更新し、かつ前記プリズムの該更新予測位置を使用して該プリズムに対する制御電圧を計算する段階と、
前記計算制御電圧を、前記プリズムを位置決めするための電子機器に出力する段階と、
を含む、方法。 - 前記プリズムの前記位置の前記予測を行う段階は、前記プリズムの移動のモデルを使用するものであり、前記モデルは、前記プリズムの物理的移動及びレーザシステム内の外乱に基づくものである、請求項7に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/620,967 US8254420B2 (en) | 2009-11-18 | 2009-11-18 | Advanced laser wavelength control |
US12/620,967 | 2009-11-18 | ||
PCT/US2010/055372 WO2011062772A1 (en) | 2009-11-18 | 2010-11-04 | Advanced laser wavelength control |
Publications (3)
Publication Number | Publication Date |
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JP2013511842A JP2013511842A (ja) | 2013-04-04 |
JP2013511842A5 JP2013511842A5 (ja) | 2013-12-26 |
JP5986927B2 true JP5986927B2 (ja) | 2016-09-06 |
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US (1) | US8254420B2 (ja) |
EP (1) | EP2502317B1 (ja) |
JP (1) | JP5986927B2 (ja) |
KR (1) | KR101772608B1 (ja) |
CN (1) | CN102576974B (ja) |
TW (1) | TWI440269B (ja) |
WO (1) | WO2011062772A1 (ja) |
Families Citing this family (11)
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US9261794B1 (en) | 2014-12-09 | 2016-02-16 | Cymer, Llc | Compensation for a disturbance in an optical source |
US10816905B2 (en) * | 2015-04-08 | 2020-10-27 | Cymer, Llc | Wavelength stabilization for an optical source |
US9785050B2 (en) | 2015-06-26 | 2017-10-10 | Cymer, Llc | Pulsed light beam spectral feature control |
US10727642B2 (en) | 2015-12-21 | 2020-07-28 | Cymer, Llc | Online calibration for repetition rate dependent performance variables |
US9762023B2 (en) * | 2015-12-21 | 2017-09-12 | Cymer, Llc | Online calibration for repetition rate dependent performance variables |
US10036963B2 (en) | 2016-09-12 | 2018-07-31 | Cymer, Llc | Estimating a gain relationship of an optical source |
US10096967B2 (en) | 2016-12-07 | 2018-10-09 | Cymer, Llc | Wavelength control system for pulse-by-pulse wavelength target tracking in DUV light source |
WO2020157839A1 (ja) * | 2019-01-29 | 2020-08-06 | ギガフォトン株式会社 | レーザ装置の波長制御方法及び電子デバイスの製造方法 |
US12008478B2 (en) | 2019-10-18 | 2024-06-11 | Unlearn.AI, Inc. | Systems and methods for training generative models using summary statistics and other constraints |
US12020789B1 (en) * | 2023-02-17 | 2024-06-25 | Unlearn.AI, Inc. | Systems and methods enabling baseline prediction correction |
US11966850B1 (en) | 2023-02-22 | 2024-04-23 | Unlearn.AI, Inc. | Systems and methods for training predictive models that ignore missing features |
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US5856991A (en) * | 1997-06-04 | 1999-01-05 | Cymer, Inc. | Very narrow band laser |
US6192064B1 (en) | 1997-07-01 | 2001-02-20 | Cymer, Inc. | Narrow band laser with fine wavelength control |
US6393037B1 (en) | 1999-02-03 | 2002-05-21 | Lambda Physik Ag | Wavelength selector for laser with adjustable angular dispersion |
US6493374B1 (en) * | 1999-09-03 | 2002-12-10 | Cymer, Inc. | Smart laser with fast deformable grating |
US6882674B2 (en) * | 1999-12-27 | 2005-04-19 | Cymer, Inc. | Four KHz gas discharge laser system |
US6563128B2 (en) | 2001-03-09 | 2003-05-13 | Cymer, Inc. | Base stabilization system |
US6914919B2 (en) * | 2000-06-19 | 2005-07-05 | Cymer, Inc. | Six to ten KHz, or greater gas discharge laser system |
US6704340B2 (en) | 2001-01-29 | 2004-03-09 | Cymer, Inc. | Lithography laser system with in-place alignment tool |
US7366219B2 (en) * | 2004-11-30 | 2008-04-29 | Cymer, Inc. | Line narrowing module |
US7450623B2 (en) * | 2005-04-12 | 2008-11-11 | Eric G. Johnson | Wavelength locked laser including integrated wavelength selecting total internal reflection (TIR) structure |
US7885309B2 (en) * | 2005-11-01 | 2011-02-08 | Cymer, Inc. | Laser system |
US7778302B2 (en) | 2005-11-01 | 2010-08-17 | Cymer, Inc. | Laser system |
US7852889B2 (en) * | 2006-02-17 | 2010-12-14 | Cymer, Inc. | Active spectral control of DUV light source |
US7822084B2 (en) | 2006-02-17 | 2010-10-26 | Cymer, Inc. | Method and apparatus for stabilizing and tuning the bandwidth of laser light |
JP5114767B2 (ja) * | 2006-10-10 | 2013-01-09 | 株式会社小松製作所 | 狭帯域化レーザのスペクトル幅調整装置 |
JP2008171961A (ja) | 2007-01-10 | 2008-07-24 | Nikon Corp | レーザ装置、露光方法及び装置、並びにデバイス製造方法 |
JP4972427B2 (ja) * | 2007-02-15 | 2012-07-11 | 株式会社小松製作所 | 高繰返し動作が可能で狭帯域化効率の高いエキシマレーザ装置 |
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- 2009-11-18 US US12/620,967 patent/US8254420B2/en active Active
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- 2010-11-04 EP EP10831986.4A patent/EP2502317B1/en not_active Not-in-force
- 2010-11-04 JP JP2012539934A patent/JP5986927B2/ja active Active
- 2010-11-04 KR KR1020127008231A patent/KR101772608B1/ko active IP Right Grant
- 2010-11-04 CN CN201080044947.2A patent/CN102576974B/zh active Active
- 2010-11-04 WO PCT/US2010/055372 patent/WO2011062772A1/en active Application Filing
- 2010-11-15 TW TW099139188A patent/TWI440269B/zh active
Also Published As
Publication number | Publication date |
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CN102576974A (zh) | 2012-07-11 |
TW201140968A (en) | 2011-11-16 |
EP2502317A4 (en) | 2017-01-04 |
CN102576974B (zh) | 2014-12-03 |
EP2502317B1 (en) | 2019-10-16 |
US8254420B2 (en) | 2012-08-28 |
TWI440269B (zh) | 2014-06-01 |
WO2011062772A1 (en) | 2011-05-26 |
KR20120092581A (ko) | 2012-08-21 |
JP2013511842A (ja) | 2013-04-04 |
EP2502317A1 (en) | 2012-09-26 |
US20110116522A1 (en) | 2011-05-19 |
KR101772608B1 (ko) | 2017-08-29 |
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