JP5984044B2 - 金属触媒下及び不活性ガス雰囲気下で有機酸ガスを用いた表面酸化物除去方法及び接合装置 - Google Patents

金属触媒下及び不活性ガス雰囲気下で有機酸ガスを用いた表面酸化物除去方法及び接合装置 Download PDF

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JP5984044B2
JP5984044B2 JP2012093437A JP2012093437A JP5984044B2 JP 5984044 B2 JP5984044 B2 JP 5984044B2 JP 2012093437 A JP2012093437 A JP 2012093437A JP 2012093437 A JP2012093437 A JP 2012093437A JP 5984044 B2 JP5984044 B2 JP 5984044B2
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oxide film
formic acid
metal region
hydrogen radicals
metal
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JP2013221175A5 (https=
JP2013221175A (ja
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須賀　唯知
唯知 須賀
赤池　正剛
正剛 赤池
ウエンホワ ヤン
ウエンホワ ヤン
山内　朗
朗 山内
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Bondtech Inc
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Bondtech Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor

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  • Pressure Welding/Diffusion-Bonding (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
JP2012093437A 2012-04-16 2012-04-16 金属触媒下及び不活性ガス雰囲気下で有機酸ガスを用いた表面酸化物除去方法及び接合装置 Active JP5984044B2 (ja)

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JP2012093437A JP5984044B2 (ja) 2012-04-16 2012-04-16 金属触媒下及び不活性ガス雰囲気下で有機酸ガスを用いた表面酸化物除去方法及び接合装置

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JP2012093437A JP5984044B2 (ja) 2012-04-16 2012-04-16 金属触媒下及び不活性ガス雰囲気下で有機酸ガスを用いた表面酸化物除去方法及び接合装置

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JP2013221175A5 JP2013221175A5 (https=) 2013-12-05
JP5984044B2 true JP5984044B2 (ja) 2016-09-06

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Families Citing this family (5)

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Publication number Priority date Publication date Assignee Title
CN103831526B (zh) * 2014-03-07 2015-10-28 哈尔滨工业大学 利用一种去膜辅助装置进行扩散连接的方法
CN111613542A (zh) * 2019-02-22 2020-09-01 中科院微电子研究所昆山分所 一种铜-铜键合的方法
CN109986191A (zh) * 2019-04-15 2019-07-09 上海交通大学 一种应用于金属/高分子连接的表面处理方法
US12062636B2 (en) * 2022-04-08 2024-08-13 Kulicke And Soffa Industries, Inc. Bonding systems, and methods of providing a reducing gas on a bonding system
CN116230564A (zh) * 2023-01-18 2023-06-06 北京工业大学 一种纳米铜材料的低温烧结连接方法

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US5409543A (en) * 1992-12-22 1995-04-25 Sandia Corporation Dry soldering with hot filament produced atomic hydrogen
JP2002069648A (ja) * 2000-09-01 2002-03-08 Sigma Koki Kk 成膜装置の内壁堆積物検出方法及び監視装置付き成膜装置
JP4355836B2 (ja) * 2002-02-18 2009-11-04 株式会社アルバック Ｃｕ膜とＣｕバンプの接続方法、Ｃｕ膜とＣｕバンプの接続装置
US7387738B2 (en) * 2003-04-28 2008-06-17 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
JP4032058B2 (ja) * 2004-07-06 2008-01-16 富士通株式会社 半導体装置および半導体装置の製造方法
JP2006156794A (ja) * 2004-11-30 2006-06-15 Sony Corp 半導体装置の接合方法及び接合構造
JP2006278616A (ja) * 2005-03-29 2006-10-12 Furukawa Electric Co Ltd:The 薄膜製造装置、薄膜の製造方法、および薄膜積層体
JP5024765B2 (ja) * 2007-01-30 2012-09-12 株式会社フジクラ 酸化物基板の清浄化方法及び酸化物半導体薄膜の製造方法
JP4875576B2 (ja) * 2007-09-25 2012-02-15 独立行政法人科学技術振興機構 ギ酸分解用触媒、ギ酸の分解方法、水素製造方法、ギ酸製造および分解用装置、水素貯蔵および発生方法
JP5548934B2 (ja) * 2009-03-12 2014-07-16 地方独立行政法人青森県産業技術センター 水素製造用光触媒
JP4473336B2 (ja) * 2009-04-13 2010-06-02 学校法人早稲田大学 接合方法
US20120160903A1 (en) * 2010-05-31 2012-06-28 Kouichi Saitou Method of joining metal

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