JP5983019B2 - 制御装置、記憶装置、記憶制御方法 - Google Patents

制御装置、記憶装置、記憶制御方法 Download PDF

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JP5983019B2
JP5983019B2 JP2012113031A JP2012113031A JP5983019B2 JP 5983019 B2 JP5983019 B2 JP 5983019B2 JP 2012113031 A JP2012113031 A JP 2012113031A JP 2012113031 A JP2012113031 A JP 2012113031A JP 5983019 B2 JP5983019 B2 JP 5983019B2
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JP2013239099A (ja
JP2013239099A5 (enExample
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伸吾 麻生
伸吾 麻生
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Sony Corp
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Sony Corp
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Priority to JP2012113031A priority Critical patent/JP5983019B2/ja
Priority to US13/888,038 priority patent/US9483396B2/en
Priority to CN2013101730399A priority patent/CN103425589A/zh
Publication of JP2013239099A publication Critical patent/JP2013239099A/ja
Publication of JP2013239099A5 publication Critical patent/JP2013239099A5/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/04—Addressing variable-length words or parts of words
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Memory System (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP2012113031A 2012-05-17 2012-05-17 制御装置、記憶装置、記憶制御方法 Expired - Fee Related JP5983019B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012113031A JP5983019B2 (ja) 2012-05-17 2012-05-17 制御装置、記憶装置、記憶制御方法
US13/888,038 US9483396B2 (en) 2012-05-17 2013-05-06 Control apparatus, storage device, and storage control method
CN2013101730399A CN103425589A (zh) 2012-05-17 2013-05-10 控制装置、存储装置以及存储控制方法

Applications Claiming Priority (1)

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JP2012113031A JP5983019B2 (ja) 2012-05-17 2012-05-17 制御装置、記憶装置、記憶制御方法

Publications (3)

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JP2013239099A JP2013239099A (ja) 2013-11-28
JP2013239099A5 JP2013239099A5 (enExample) 2015-03-19
JP5983019B2 true JP5983019B2 (ja) 2016-08-31

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JP2012113031A Expired - Fee Related JP5983019B2 (ja) 2012-05-17 2012-05-17 制御装置、記憶装置、記憶制御方法

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US (1) US9483396B2 (enExample)
JP (1) JP5983019B2 (enExample)
CN (1) CN103425589A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6034183B2 (ja) * 2012-12-27 2016-11-30 株式会社東芝 半導体記憶装置
KR101703984B1 (ko) * 2014-07-18 2017-02-09 주식회사 큐램 메모리 처리 방법, 및 메모리 처리 시스템
US11347637B2 (en) 2014-10-30 2022-05-31 Kioxia Corporation Memory system and non-transitory computer readable recording medium
US10102118B2 (en) 2014-10-30 2018-10-16 Toshiba Memory Corporation Memory system and non-transitory computer readable recording medium
US10331551B2 (en) 2014-12-29 2019-06-25 Toshiba Memory Corporation Information processing device and non-transitory computer readable recording medium for excluding data from garbage collection
FR3045182A1 (fr) * 2015-12-15 2017-06-16 Stmicroelectronics Rousset Procede et dispositif de gestion d'espace memoire
US10338983B2 (en) 2016-12-30 2019-07-02 EMC IP Holding Company LLC Method and system for online program/erase count estimation
US11069418B1 (en) 2016-12-30 2021-07-20 EMC IP Holding Company LLC Method and system for offline program/erase count estimation
US10289550B1 (en) 2016-12-30 2019-05-14 EMC IP Holding Company LLC Method and system for dynamic write-back cache sizing in solid state memory storage
US10290331B1 (en) 2017-04-28 2019-05-14 EMC IP Holding Company LLC Method and system for modulating read operations to support error correction in solid state memory
US10403366B1 (en) * 2017-04-28 2019-09-03 EMC IP Holding Company LLC Method and system for adapting solid state memory write parameters to satisfy performance goals based on degree of read errors
US11029879B2 (en) * 2018-01-29 2021-06-08 Samsung Electronics Co., Ltd Page size synchronization and page size aware scheduling method for non-volatile memory dual in-line memory module (NVDIMM) over memory channel
US20220114147A1 (en) * 2018-12-19 2022-04-14 Sony Group Corporation Information processing apparatus, information processing method, and information processing program
CN109918381B (zh) * 2019-03-13 2021-06-11 北京百度网讯科技有限公司 用于存储数据的方法和装置
JP7366795B2 (ja) * 2020-02-14 2023-10-23 キオクシア株式会社 メモリシステムおよび制御方法
KR20220073306A (ko) * 2020-11-26 2022-06-03 에스케이하이닉스 주식회사 스토리지 장치 및 그 동작 방법
US12271615B2 (en) * 2022-03-11 2025-04-08 Samsung Electronics Co., Ltd. Systems and methods for checking data alignment between applications, file systems, and computational storage devices

Family Cites Families (17)

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JPH05151068A (ja) * 1991-11-29 1993-06-18 Toshiba Corp メモリカード装置
US8108590B2 (en) * 2000-01-06 2012-01-31 Super Talent Electronics, Inc. Multi-operation write aggregator using a page buffer and a scratch flash block in each of multiple channels of a large array of flash memory to reduce block wear
JP4713867B2 (ja) * 2004-09-22 2011-06-29 株式会社東芝 メモリコントローラ，メモリ装置及びメモリコントローラの制御方法
JP5162846B2 (ja) 2005-07-29 2013-03-13 ソニー株式会社 記憶装置、コンピュータシステム、および記憶システム
JP5076411B2 (ja) 2005-11-30 2012-11-21 ソニー株式会社 記憶装置、コンピュータシステム
US8307149B2 (en) * 2005-12-09 2012-11-06 Panasonic Corporation Nonvolatile memory device including a logical-to-physical logig-to-physical address conversion table, a temporary block and a temporary table
US7428610B2 (en) * 2006-02-14 2008-09-23 Atmel Corporation Writing to flash memory
JP2008033788A (ja) * 2006-07-31 2008-02-14 Matsushita Electric Ind Co Ltd 不揮発性記憶装置、データ記憶システム、およびデータ記憶方法
US7953954B2 (en) * 2007-01-26 2011-05-31 Micron Technology, Inc. Flash storage partial page caching
JP4537420B2 (ja) 2007-04-02 2010-09-01 株式会社リコー Ｓｉｍｄ型マイクロプロセッサ
JP4356782B2 (ja) 2007-09-12 2009-11-04 ソニー株式会社 メモリ装置、メモリ制御方法、およびプログラム
US20120089765A1 (en) * 2010-10-07 2012-04-12 Huang Shih-Chia Method for performing automatic boundary alignment and related non-volatile memory device
JP5319723B2 (ja) * 2011-03-24 2013-10-16 株式会社東芝 メモリシステムおよびプログラム
US9898402B2 (en) * 2011-07-01 2018-02-20 Micron Technology, Inc. Unaligned data coalescing
US20130031301A1 (en) * 2011-07-29 2013-01-31 Stec, Inc. Backend organization of stored data
US8924631B2 (en) * 2011-09-15 2014-12-30 Sandisk Technologies Inc. Method and system for random write unalignment handling
KR20130096881A (ko) * 2012-02-23 2013-09-02 삼성전자주식회사 플래시 메모리 장치

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Publication number Publication date
JP2013239099A (ja) 2013-11-28
US20130311712A1 (en) 2013-11-21
CN103425589A (zh) 2013-12-04
US9483396B2 (en) 2016-11-01

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