JP5976577B2 - パワーデバイス用ヒートシンクおよびその製造方法 - Google Patents
パワーデバイス用ヒートシンクおよびその製造方法 Download PDFInfo
- Publication number
- JP5976577B2 JP5976577B2 JP2013059112A JP2013059112A JP5976577B2 JP 5976577 B2 JP5976577 B2 JP 5976577B2 JP 2013059112 A JP2013059112 A JP 2013059112A JP 2013059112 A JP2013059112 A JP 2013059112A JP 5976577 B2 JP5976577 B2 JP 5976577B2
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- Prior art keywords
- heat sink
- phosphorus
- power device
- heat
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本実施形態にかかるヒートシンクは、保護膜表面の色に基づいても、識別することが可能である。
このような特性を備えたヒートシンクを含むパワーデバイスは、自己発熱を含む高温環境中で長期使用した際でも信頼性が高められ、トラブルを未然に防止することが可能となる。
6…Cu箔; 7…絶縁板; 8…ベース板; 9…サーマルグリース
10…ヒートシンク; 11…アルミニウム製母材; 12…被膜
13…はんだ接合部; 16…パワーデバイス; a…非晶質ピーク
b…結晶質ピーク; c…非晶質ピーク。
Claims (8)
- アルミニウム製の母材と、
前記アルミニウム製の母材の表面を覆う保護膜とを具備し
前記保護膜は黄褐色を帯び、結晶質のリン含有ニッケルを含むことを特徴とするパワーデバイス用ヒートシンク。 - 前記リン含有ニッケル中のリン濃度は、3質量%以上5質量%以下であることを特徴とする請求項1に記載のパワーデバイス用ヒートシンク。
- 前記リン含有ニッケル中には、Ni3Pが含まれないことを特徴とする請求項1または2に記載のパワーデバイス用ヒートシンク。
- 前記保護膜は、劣化により黄褐色を帯びた色から他の色に変化することを特徴とする請求項1〜3のいずれか1項に記載のパワーデバイス用ヒートシンク。
- 請求項1に記載のパワーデバイス用ヒートシンクの製造方法であって、
アルミニウム製母材に無電解めっき処理を施して、リン含有ニッケルを含むめっき膜を形成する工程と、
前記めっき膜を大気中で熱処理して、結晶質のリン含有ニッケルを含む保護膜を得る工程とを具備することを特徴とする方法。 - 前記熱処理は、250℃以上350℃以下の温度で行なわれることを特徴とする請求項5に記載のパワーデバイス用ヒートシンクの製造方法。
- 前記熱処理は、1時間以内で行なわれることを特徴とする請求項5または6に記載のパワーデバイス用ヒートシンクの製造方法。
- 前記めっき膜はAg白色であり、前記熱処理後の保護膜の表面は黄褐色を帯びることを特徴とする請求項5乃至7のいずれか1項に記載のパワーデバイス用ヒートシンクの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013059112A JP5976577B2 (ja) | 2013-03-21 | 2013-03-21 | パワーデバイス用ヒートシンクおよびその製造方法 |
Applications Claiming Priority (1)
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JP2013059112A JP5976577B2 (ja) | 2013-03-21 | 2013-03-21 | パワーデバイス用ヒートシンクおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014187072A JP2014187072A (ja) | 2014-10-02 |
JP5976577B2 true JP5976577B2 (ja) | 2016-08-23 |
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JP2013059112A Expired - Fee Related JP5976577B2 (ja) | 2013-03-21 | 2013-03-21 | パワーデバイス用ヒートシンクおよびその製造方法 |
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JP (1) | JP5976577B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9852962B2 (en) | 2014-02-25 | 2017-12-26 | Hitachi Automotive Systems, Ltd. | Waterproof electronic device and manufacturing method thereof |
JP6394660B2 (ja) * | 2016-08-24 | 2018-09-26 | トヨタ自動車株式会社 | ヒートシンクの検査方法、検査装置及び製造方法 |
JP7318558B2 (ja) * | 2020-02-20 | 2023-08-01 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4366579B2 (ja) * | 2003-12-02 | 2009-11-18 | 上村工業株式会社 | 黒色ニッケル皮膜の形成方法及び無電解ニッケル−リンめっき浴 |
JP2006206985A (ja) * | 2005-01-31 | 2006-08-10 | C Uyemura & Co Ltd | 無電解ニッケル−リンめっき皮膜及び無電解ニッケル−リンめっき浴 |
JP2009302102A (ja) * | 2008-06-10 | 2009-12-24 | Sony Corp | 固体撮像装置およびその製造方法 |
JP5867332B2 (ja) * | 2011-08-31 | 2016-02-24 | 株式会社豊田中央研究所 | アルミニウム合金製耐摩耗性部材およびその製造方法 |
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2013
- 2013-03-21 JP JP2013059112A patent/JP5976577B2/ja not_active Expired - Fee Related
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JP2014187072A (ja) | 2014-10-02 |
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