JP5970744B2 - Electronic component package sealing member, electronic component package, and method of manufacturing electronic component package sealing member - Google Patents

Description

  The present invention relates to an electronic component package sealing member used as a first sealing member of an electronic component package in which an electrode of an electronic component element is sealed by a first sealing member and a second sealing member, and the electronic component The present invention relates to an electronic component package using a package sealing member and a method for manufacturing the electronic component package sealing member.

  An internal space of a package of electronic components such as a piezoelectric vibration device (hereinafter referred to as an electronic component package) is hermetically sealed to prevent deterioration of characteristics of electrodes of electronic component elements mounted in the internal space.

  As this type of electronic component package, there is one in which it is constituted by two sealing members such as a base and a lid, and its casing is constituted by a rectangular parallelepiped package. In such an internal space of the package, an electronic component element such as a piezoelectric vibrating piece is held and bonded to the base. And the electrode of the electronic component element in the internal space of the package is hermetically sealed by joining the base and the lid.

  For example, in the quartz component disclosed in Patent Document 1 (electronic component in the present invention), a quartz piece is hermetically sealed in the internal space of a package constituted by a base and a lid joined by a brazing material (alloy). Yes. In addition, a wiring metal (external electrode) electrically connected to the crystal piece is provided at the end of the back surface of the base.

JP-A-6-283951

  Incidentally, in the above-described quartz component of Patent Document 1, the external electrode formed on the back surface of the base is bonded to a mounting substrate such as a printed wiring board by soldering. When soldering the external electrode to the mounting substrate, the molten solder sometimes crawls up to the surface of the base along the side surface of the base. Such creeping up of the solder onto the surface of the base has caused a short circuit between the brazing material for joining the base and the lid and the external electrode.

  The present invention has been made in view of such a situation, and the one main surface of the solder applied to the external electrode provided on the other main surface opposite to the one main surface on which the electronic component element is mounted. There are provided an electronic component package sealing member capable of suppressing creeping up, an electronic component package using the electronic component package sealing member, and a method of manufacturing such an electronic component package sealing member. For the purpose.

An electronic component package sealing member according to the present invention includes a first sealing member on which an electronic component element is mounted on one principal surface, and the electronic component element joined to the one principal surface of the first sealing member. An electronic component package sealing member used as the first sealing member of an electronic component package comprising a second sealing member that hermetically seals the electrode of the first sealing member, the other main surface of the first sealing member A tapered surface that is inclined from the other main surface toward the one main surface is formed along an outer peripheral edge of the first main surface, and an external electrode is provided along the tapered surface on the tapered surface of the other main surface, A region between the outer peripheral edge and the external electrode is covered with a wetting prevention film made of a resin material having lower solder wettability than the external electrode on the outer peripheral edge side of the external electrode in the tapered surface of the other main surface. And the wetting prevention film is formed of the first sealing member. Characterized in that it is formed along the outer peripheral edge of the other main surface.

In the electronic component package sealing member according to the present invention, a region between the outer peripheral edge of the other main surface and the external electrode is covered with a wetting prevention film having a lower solder wettability than the external electrode. For this reason, the wetting and spreading of the solder applied to the external electrode remains in the region covered with the wetting prevention film between the outer peripheral edge of the other main surface and the external electrode. Therefore, the solder creeping from the other main surface on which the external electrode is formed to the one main surface passing through the side surface is suppressed. In addition, since the tapered surface is formed along the outer peripheral edge of the other main surface, cracking and chipping of the electronic component package sealing member are suppressed, and the mechanical strength is improved. In addition, when the other main surface of the electronic component package sealing member is bonded to the mounting substrate by solder, the solder enters the gap formed between the tapered surface and the mounting substrate, and the bonding strength to the mounting substrate Is secured. Furthermore, when the other main surface of the electronic component package sealing member is joined to the mounting substrate, the above-described gap in which solder is interposed is formed on the side of the electronic component package sealing member. While the package sealing member is bonded to the mounting substrate, the side of the electronic component package sealing member is viewed, so that the solder interposed between the electronic component package sealing member and the mounting substrate can be removed. Existence and amount can be confirmed.

  In this case, the wetting prevention film can be made of a resin material having low solder wettability as compared with the external electrode.

  Moreover, in the sealing member for an electronic component package according to the present invention, the wetting prevention film is made of a resin material, and the entire end portion along the outer peripheral edge of the other main surface is covered with the wetting prevention film. Good.

  In this case, the entire end portion along the outer peripheral edge of the other main surface is covered with the resin material. That is, in the manufacture of an electronic component package sealing member having such a configuration, a plurality of electronic component package sealing members are formed on a wafer made of a glass material, the wafer is diced, and the electronic component package sealing member is sealed. A resin material is disposed at the cutting portion of the wafer when the stopper member is separated. When the resin material is arranged at the cut portion of the wafer in this way, occurrence of chipping of the wafer (glass material) due to dicing can be suppressed. The electronic component package sealing member in which the occurrence of such chipping is suppressed has high strength against an external impact. For example, when the mounting substrate on which the electronic component package sealing member is mounted is bent and the bending stress of the mounting substrate is transmitted to the electronic component package sealing member, the generation of cracks starting from chipping is suppressed. . For this reason, at the time of mounting on a mounting substrate, it has high strength against bending stress of the mounting substrate.

  Further, in the sealing member for an electronic component package according to the present invention, the wetting prevention film is made of a resin material, and the other main surface is the wetting prevention film in all regions except the region where the external electrode is formed. It may be coated.

  In this case, a wide area of the other main surface of the electronic component package sealing member is protected by the resin material. Such a resin material protecting the other main surface reduces bending stress transmitted from the mounting substrate to the electronic component package sealing member when the mounting substrate on which the electronic component package sealing member is mounted is bent. . For this reason, in the electronic component package sealing member according to the present invention, the strength against bending stress of the mounting board when mounted on the mounting board can be improved.

  In the electronic component package sealing member according to the present invention, the wetting prevention film is made of a resin material, and the electronic component element mounted on the one main surface is electrically connected to the external electrode on the other main surface. A wiring area is provided on the other main surface, and a contact area where the wiring pattern and the external electrode are in contact with each other is set. A prevention film may be formed, and the external electrode may be formed on the wiring pattern provided in the contact region and on the wetting prevention film.

  In this case, a wider area of the other main surface of the electronic component package sealing member can be protected with the resin material. For this reason, in the electronic component package sealing member according to the present invention, the strength against bending stress of the mounting substrate when mounted on the mounting substrate can be further improved.

  The electronic component package according to the present invention includes a first sealing member on which an electronic component element is mounted on one main surface, and an electrode of the electronic component element bonded to the one main surface of the first sealing member. And a second sealing member that hermetically seals the electronic component package, wherein the first sealing member is a sealing member for an electronic component package according to the present invention.

  The electronic component package according to the present invention is obtained by using the electronic component package sealing member according to the present invention as a first sealing member on which an electronic component element is mounted on one main surface. The solder applied to the external electrode on the other main surface of the first sealing member is prevented from creeping up from the other main surface of the first sealing member to the one main surface of the first sealing member. can do.

The method for manufacturing an electronic component package sealing member according to the present invention includes: a first sealing member on which an electronic component element is mounted on one main surface; and the first sealing member bonded to the one main surface of the first sealing member. An electronic component package sealing member used as the first sealing member of an electronic component package comprising a second sealing member that hermetically seals an electrode of an electronic component element, the first sealing A molding step of molding the electronic component package sealing member such that a tapered surface inclined from the other main surface toward the one main surface is formed along the outer peripheral edge of the other main surface of the stop member; An electrode forming step of forming an external electrode along the tapered surface of the electrode forming region of the other main surface of the sealing member for the electronic component package, and a tapered surface of the electrode forming region of the other main surface On the outer peripheral side of the external electrode, A region between the outer peripheral edge of the main surface and the electrode forming region is covered with a wetting prevention film made of a resin material having a solder wettability lower than that of the external electrode, and the wetting prevention film is covered with the first sealing. And a covering step that is formed along the outer peripheral edge of the other main surface of the stop member.

  According to the method for manufacturing an electronic component package sealing member according to the present invention, the region between the outer peripheral edge of the other main surface of the electronic component package sealing member and the electrode forming region is formed in the electrode forming region. By having a coating step of coating with a wetting prevention film made of a material having a lower solder wettability than the external electrode, wetting and spreading the solder applied to the external electrode between the outer peripheral edge of the other main surface and the external electrode The sealing member for electronic component packages which can be fastened in the area | region covered with the wetting prevention film | membrane can be manufactured. That is, it is possible to manufacture an electronic component package sealing member that can suppress the solder creeping from one other main surface on which the external electrode is formed to one main surface that travels along the side surface.

  In this method of manufacturing an electronic component package sealing member according to the present invention, in the forming step, a plurality of electronic component package sealing members are formed on a wafer made of a glass material. After covering the entire end along the outer peripheral edge of the main surface with the wetting prevention film made of a resin material, the wafer may be diced to separate the electronic component package sealing member.

  In this case, the wafer cutting portion in which a plurality of electronic component package sealing members are formed, that is, the entire end portion along the outer peripheral edge of the other main surface of the electronic component package sealing member is covered with a resin material. By protecting, it is possible to suppress the occurrence of chipping on the wafer (glass material) during dicing of the wafer.

  According to the electronic component package sealing member and the electronic component package of the present invention, the solder used to bond the external electrode to the mounting substrate is not the electronic component package sealing member on which the external electrode is formed. Climbing from one main surface to the other main surface can be suppressed.

  According to the method for manufacturing a sealing member for an electronic component package of the present invention, the solder used for bonding the external electrode to the mounting substrate is transferred from the other main surface on which the external electrode is formed to one main surface along the side surface. It is possible to manufacture an electronic component package sealing member that can suppress creeping up.

1 is a schematic configuration diagram showing the internal space of the crystal resonator according to the first embodiment, and is a schematic cross-section of the crystal resonator when the whole is cut along the line AA of the base shown in FIG. FIG. FIG. 2 is a schematic plan view of the base according to the first embodiment. FIG. 3 is a schematic rear view of the base according to the first embodiment. 4 is a partial schematic cross-sectional view showing, on an enlarged scale, a portion B in FIG. 1 when the crystal resonator according to the first embodiment is bonded to a mounting substrate with solder. FIG. 5 is a schematic back view of the lid according to the first embodiment. FIG. 6 is a schematic plan view of the quartz crystal resonator element according to the first embodiment. FIG. 7 is a partial schematic cross-sectional view of the wafer showing one process of manufacturing the base according to the first embodiment. FIG. 8 is a partial schematic cross-sectional view of the wafer showing one process of manufacturing the base according to the first embodiment. FIG. 9 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 10 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 11 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing the base according to the first embodiment. FIG. 12 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 13 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing the base according to the first embodiment. FIG. 14 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 15 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 16 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 17 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 18 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 19 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 20 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 21 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 22 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 23 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 24 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 25 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 26 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 27 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 28 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 29 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 30 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 31 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 32 is a schematic rear view of the base according to the second embodiment. FIG. 33 is a schematic rear view of the base according to the third embodiment. FIG. 34 is a schematic configuration diagram showing the internal space of the crystal resonator according to the fourth embodiment, and is a schematic cross section of the crystal resonator when the whole is cut along the AA line of the base shown in FIG. FIG. FIG. 35 is a schematic rear view of the base according to the fourth embodiment. FIG. 36 is a schematic plan view of a quartz crystal resonator element according to another embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiment, the present invention is applied to a package of a crystal resonator that is a piezoelectric vibration device as an electronic component package, and the present invention is applied to a tuning fork type crystal vibration piece that is a piezoelectric vibration piece as an electronic component element. The case where it is applied is shown.

<Embodiment 1>
As shown in FIG. 1, the crystal resonator 1 according to the first embodiment holds a crystal vibrating piece 2 (an electronic component element as referred to in the present invention) made of a tuning-fork type crystal piece and the crystal vibrating piece 2. A base 4 for hermetically sealing the quartz crystal vibrating piece 2 (an electronic component package sealing member as a first sealing member in the present invention) and a base 4 are disposed so as to face each other and held by the base 4 A lid 7 (second sealing member according to the present invention) is provided for hermetically sealing the excitation electrodes 31 and 32 (electrodes of the electronic component element according to the present invention) of the quartz crystal resonator element 2.

  In this crystal unit 1, the base 4 and the lid 7 are bonded by a bonding material 12 made of an alloy of Au and Sn, a first bonding layer 48 described below, and a second bonding layer 74 described below. A main body housing including the hermetically sealed internal space 11 is configured. In the internal space 11, the crystal vibrating piece 2 is ultrasonically bonded to the base 4 by an FCB method (Flip Chip Bonding) using conductive bumps 13 such as gold bumps. In the first embodiment, the conductive bump 13 is a plated bump made of a non-fluid member such as a gold bump. The base 4 and the crystal vibrating piece 2 may be joined by a conductive resin joining material.

  Next, each configuration of the crystal resonator 1 will be described.

  The base 4 is made of a glass material such as borosilicate glass, and as illustrated in FIGS. 1 to 3, a wall portion extending upward from the bottom portion 41 along the outer periphery of the bottom surface 41 and one main surface 42 of the base 4. 44 is formed into a box-like body. Such a base 4 is formed into a box-like body by wet-etching a base material of a single rectangular parallelepiped plate.

  The inner surface of the wall portion 44 of the base 4 is formed into a taper shape. The top surface of the wall 44 is a joint surface with the lid 7, and a first joint layer 48 for joining with the lid 7 is provided on the joint surface. The first bonding layer 48 has a laminated structure of a plurality of layers. A sputtered film (see reference numeral 93 in FIG. 1) formed by sputtering on the top surface of the wall portion 44 of the base 4 and a sputtered film are formed on the sputtered film. It consists of a plated film (see reference numeral 94 in FIG. 1). The sputtered film is composed of a Ti film (not shown) formed by sputtering on the top surface of the wall 44 of the base 4 and an Au film (not shown) formed by sputtering on the Ti film. . The plated film is made of an Au film plated on the sputtered film. On one main surface 42 of the base 4, a cavity 45 having a rectangular shape in plan view surrounded by a bottom 41 and a wall 44 is formed. A pedestal 46 is etched on the bottom surface 451 of the cavity 45 along the entire one end 452 in the longitudinal direction. The crystal vibrating piece 2 is mounted on the pedestal portion 46. The wall surface of the cavity 45 is the inner surface of the wall portion 44 and is formed in a tapered shape as described above.

  Further, as shown in FIGS. 1 and 3, the other main surface 43 (back surface of the casing) of the base 4 has a taper that is inclined from the other main surface 43 toward the one main surface 42 along the entire outer peripheral edge 47. A surface 471 is formed. As described above, the tapered surface 471 is formed along the outer peripheral edge 47 of the other main surface 43, whereby cracking and chipping of the base 4 are suppressed and the mechanical strength is improved. In addition, when the base 4 is bonded to the mounting substrate 101 with the solder 102 and the crystal resonator 1 is mounted on the mounting substrate 101, an external terminal electrode (described later) formed on the tapered surface 471 as shown in FIG. By joining the solder 102 into the gap 103 formed between 53 and 54 and the mounting substrate 101, the bonding strength to the mounting substrate 101 is ensured. In particular, in the first embodiment, a tapered surface 471 is formed along the entire outer peripheral edge 47 of the other main surface 43 of the base 4, and the tapered surface 471 is on the long side and the short side of the other main surface 43. Exist in both. For this reason, the solder 102 enters each of the gaps 103 on the long side and the short side of the other main surface 43 and is bonded to the mounting substrate 101 in each of the long side direction and the short side direction of the other main surface 43. Strength is secured. Further, when the tapered surface 471 is formed along the outer peripheral edge 47 of the other main surface 43, the solder is interposed on the side of the base 4 when the other main surface 43 of the base 4 is joined to the mounting substrate 101. Therefore, the presence and amount of solder interposed between the base 4 and the mounting substrate 101 can be determined by looking at the side of the base 4 in a state where the base 4 is bonded to the mounting substrate 101. Can be confirmed.

  The base 4 includes a pair of electrode pads 51 and 52 that are electromechanically bonded to the excitation electrodes 31 and 32 of the crystal vibrating piece 2, and external terminal electrodes 53 that are electrically connected to external components and external devices. 54 (external electrode in the present invention), an electrode pad 51 and an external terminal electrode 53, and a wiring pattern 55 for electrically connecting the electrode pad 52 and the external terminal electrode 54 are formed. These electrode pads 51, 52, external terminal electrodes 53, 54 and wiring pattern 55 constitute a base 4 electrode. The electrode pads 51 and 52 are formed on the surface of the pedestal portion 46.

  The electrode pads 51 and 52 include a first sputtered film (see reference numeral 92 in FIG. 1) formed on the base 4 substrate and a second sputtered film (see FIG. 1) formed on the first sputtered film. And an Au plating film (see reference numeral 94 in FIG. 1) formed on the second sputtered film. The first sputtered film constituting the electrode pads 51 and 52 is formed by sputtering a Ti film (not shown) formed by sputtering on one principal surface 42 of the base 4 and sputtering on the Ti film. The second sputtered film is formed by sputtering a Ti film (not shown) formed by sputtering on the first sputtered film and by sputtering on the Ti film. And an Au film (not shown). The Au plating film is made of an Au film plated on the second sputtered film.

  The wiring pattern 55 is formed from the main surface 42 of the base 4 through the inner side surface 491 of the through hole 49 (see below) so as to electrically connect the electrode pads 51 and 52 and the external terminal electrodes 53 and 54. 4 is formed on the other main surface 43. The wiring pattern 55 is composed of a first sputtered film (see reference numeral 92 in FIG. 1) formed on the substrate of the base 4, and a portion of the first sputtered film located on one main surface 42 of the base 4. A second sputtered film (see reference numeral 93 in FIG. 1) and an Au plating film (see reference numeral 94 in FIG. 1) are formed on (see reference numeral 92 in FIG. 1). The first sputtered film, the second sputtered film, and the Au plated film of the wiring pattern 55 have the same configuration as the first sputtered film, the second sputtered film, and the Au plated film of the electrode patterns 51 and 52, respectively. ing.

  As shown in FIG. 3, the external terminal electrodes 53 and 54 are formed in electrode forming regions 56 and 57 set at both ends in the longitudinal direction of the other main surface 43, and are separated in parallel along the longitudinal direction. It is installed. The electrode forming regions 56 and 57 are each set in a rectangular shape. Both end portions 561, 563, 571, 573 in the longitudinal direction of the electrode forming regions 56, 57 and one end portions 562, 572 in the short direction are respectively tapered surfaces 471 formed along the outer peripheral edge of the other main surface 43. Exists within.

  The external terminal electrodes 53 and 54 are second sputtered films (see FIG. 1) formed on the first sputtered film (see reference numeral 92 in FIG. 1) constituting the wiring pattern 55 formed on the other main surface 43 of the base 4. 1 (see reference numeral 93 in FIG. 1), a Ni plating film (see reference numeral 95 in FIG. 1) formed on the second sputtered film (see reference numeral 93 in FIG. 1), and Au plating formed on the Ni plating film. And a membrane (see reference numeral 99 in FIG. 1). The second sputtered films of the external terminal electrodes 53 and 54 have the same configuration as the second sputtered films of the electrode patterns 51 and 52 and the wiring pattern 55, respectively. In the external terminal electrodes 53 and 54, the Ni plating film is made of Ni film plated on the second sputtered film, and the Au plating film is made of Au film plated on the Ni plating film.

  In addition, as shown in FIGS. 1 to 3, the excitation electrode 31, 32 of the crystal vibrating piece 2 is led out from the cavity 45 to the outside of the cavity 45 by the wiring pattern 55 through the electrode pads 51, 52. A through-hole 49 is formed for this purpose.

  The through holes 49 are formed at the same time as the formation of the cavity 45 when the base 4 is etched by photolithography, and the two through holes 49 are formed in the base 4 as shown in FIGS. It is formed so as to penetrate between 42 and 43. An inner side surface 491 of the through hole 49 has an inclination with respect to the one main surface 42 and the other main surface 43 of the base 4 and is formed in a tapered shape. As shown in FIG. 1, the diameter of the through hole 49 is maximum at the end portion on the other main surface 43 side of the base 4 and is minimum at the end portion on the one main surface 42 side of the base 4. Thus, in the first embodiment, the inner side surface 491 of the through hole 49 is inclined with respect to the one main surface 42 and the other main surface 43 of the base 4, and the one main surface 42 and the through hole of the base 4. The angle θ formed by the inner surface 491 of 49 is about 45 degrees, but is not limited to this. For example, the angle θ formed by one main surface 42 of the base 4 and the inner side surface 491 of the through hole 49 is greater than 45 degrees, and may be 70 to 90 degrees as a specific example. When the angle θ formed by one main surface 42 of the base 4 and the inner side surface 491 of the through hole 49 is close to 90 degrees, the area occupied by the through hole 49 in the base 4 is reduced, and the degree of freedom of the location where the wiring pattern 55 is formed Can be improved.

  A first sputtered film (see reference numeral 92 in FIG. 1) made of Ti and Cu, which is a part of the wiring pattern 55, is formed on the inner side surface 491 of the through hole 49. Further, in the inside of the through hole 49, a filler composed of Cu is filled on the first sputtered film (see reference numeral 92 in FIG. 1) to form a filler layer 98. By this filler layer 98, The through hole 49 is blocked. The filling layer 98 is composed of a Cu plating layer formed by electrolytic plating on the surface of the first sputtered film.

  A resin pattern 61 made of a photosensitive resin material is formed on the other main surface 43 of the base 4. In the first embodiment, the resin pattern 61 is formed on the other main surface 43 of the base 4 in the entire region except for the electrode formation regions 56 and 57. By this resin pattern 61, the entire end portion along the outer peripheral edge 47 of the other main surface 43 including the region 432 between the outer peripheral edge 47 and the external terminal electrodes 53 and 54 (electrode forming regions 56 and 57) is made of the resin material. It coat | covers with the film | membrane (wet prevention film said by this invention) which becomes. Further, the resin pattern 61 closes the end portion of the through hole 49 on the other main surface 43 side. The resin material constituting the resin pattern 61 is soldered as compared with the external terminal electrodes 53 and 54, specifically, an Au plating film (see reference numeral 99 in FIG. 1) constituting the surface of the external terminal electrodes 53 and 54. It is a material with low wettability. For this reason, as shown in FIG. 4, when the external terminal electrodes 53 and 54 of the base 4 are soldered to the mounting substrate 101, the wetting and spreading of the solder 102 applied to the external terminal electrodes 53 and 54 is caused by the other main surface. It remains in a region 432 covered with a resin pattern 61 (resin material) between the outer peripheral edge 47 of 43 and the external terminal electrodes 53 and 54. For this reason, when the external terminal electrodes 53 and 54 are soldered to the mounting substrate 101, solder spreading on the other main surface 43 is suppressed, and the solder crawls up to the one main surface 42 along the outer surface of the base 4. Therefore, a short circuit between the metal constituting the first bonding layer 48, the second bonding layer 74 and the bonding material 12 for bonding the base 4 and the lid 7 to the external terminal electrodes 53 and 54 is prevented. . Further, since the resin pattern 61 is formed on the entire other end surface along the outer peripheral edge 47 on the other main surface 43 of the base 4, as will be described later, the wafer 8 made of a glass material on which the plurality of bases 4 are formed. The occurrence of chipping is suppressed when dicing. Further, since the entire area of the other main surface 43 except the electrode formation areas 56 and 57 is covered with the resin pattern 61, the solder 102 is bonded when the other main surface 43 of the base 4 is joined to the mounting substrate 101 with the solder 102. Thus, the base 4 (glass material or the like) of the base 4 is prevented from being altered.

  Further, polybenzoxazole (PBO) is used for the resin material constituting the resin pattern 61. In addition, the resin material which comprises the resin pattern 61 is not limited to PBO, Any resin material with favorable adhesiveness with the material (for example, glass material) which comprises the base 4 can be used. Therefore, as the resin material constituting the resin pattern 61, for example, benzocyclobutene (BCB), epoxy, polyimide, or the like may be used in addition to PBO. Further, the resin material constituting the resin pattern 61 used in the first embodiment, that is, PBO, is a resin material having photosensitivity, and is a resin material capable of pattern formation by a photolithography method. Here, the photosensitive resin material has a broad concept including a photosensitive resin composition including a photosensitive agent and a resin in addition to a resin material made of a photosensitive resin.

  The lid 7 is made of a glass material such as borosilicate glass, and as shown in FIGS. 1 and 5, the top portion 71 and a wall portion extending downward from the top portion 71 along the outer periphery of one main surface 72 of the lid 7. 73. Such a lid 7 is formed by wet-etching a base material of a single rectangular parallelepiped.

  Both side surfaces (inner side surface 731 and outer side surface 732) of the wall portion 73 of the lid 7 are formed in a tapered shape. The wall portion 73 is formed with a second bonding layer 74 for bonding to the base 4.

  As shown in FIG. 1, the second bonding layer 74 of the lid 7 is formed from the top surface 733 to the outer surface 732 of the wall portion 73 of the lid 7. The second bonding layer 74 has a laminated structure in which a Ti film (not shown) made of Ti is formed, and an Au film (not shown) made of Au is formed on the Ti film. The Au film is formed by sputtering using a sputtering method.

  The bonding material 12 for bonding the base 4 and the lid 7 is laminated on the second bonding layer 74 of the lid 7 before the base 4 and the lid 7 are bonded. In this bonding material 12, an Au / Sn film (not shown) made of an alloy of Au and Sn is formed on the second bonding layer 74 of the lid 7 by plating, and an Au film (not shown) is formed on the Au / Sn film. (Omitted) consists of a plurality of laminated structures plated. The Au film has a laminated structure of a plurality of layers in which an Au strike plating film is formed by plating and an Au plating film is formed by plating on the Au strike plating film. In such a bonding material 12, the Au / Sn film is melted by heating to become an AuSn alloy film. The bonding material 12 may be configured by plating an AuSn alloy film on the second bonding layer 74 of the lid 7. In the first embodiment, the bonding material 12 is laminated on the second bonding layer 74 of the lid 7 before being bonded to the base 4 and the lid 7, but is laminated on the first bonding layer 48 of the base 4. May be.

  The crystal vibrating piece 2 is a crystal Z plate formed by wet etching from a crystal element plate (not shown) that is a crystal piece of anisotropic material.

  As shown in FIG. 6, the crystal vibrating piece 2 includes two leg portions 21 and 22 that are vibration portions, a base portion 23, and a joint portion 24 that is joined to the electrode pads 51 and 52 of the base 4. The piezoelectric vibration element plate 20 includes two leg portions 21 and 22 projecting from one end surface 231 of the base portion 23 and a joint portion 24 projecting from the other end surface 232 of the base portion 23.

  As shown in FIG. 6, the base 23 has a symmetrical shape in plan view. Further, the side surface 233 of the base portion 23 is formed so that the portion on the one end surface 231 side has the same width as the one end surface 231 and the portion on the other end surface 232 side gradually narrows toward the other end surface 232 side. .

  As shown in FIG. 6, the two leg portions 21 and 22 are provided so as to protrude from the one end surface 231 of the base portion 23 in the same direction. The tip portions 211 and 221 of the two leg portions 21 and 22 are formed wider than the other portions of the leg portions 21 and 22 (wide in the direction orthogonal to the protruding direction), and further, The tip corner is curved. Further, a groove portion 25 is formed on both main surfaces of the two leg portions 21 and 22 in order to improve the CI value (series resistance value).

  As shown in FIG. 6, the joint portion 24 is provided so as to protrude from the central portion in the width direction of the other end surface 232 of the base portion 23. The joint portion 24 includes a short side portion 241 that protrudes in a direction perpendicular to the other end surface 232 of the base portion 23, and a front end portion of the short side portion 241 that is connected to the front end portion of the short side portion 241 and is folded at a right angle in plan view. It is composed of a long side portion 242 that is bent and extends in the width direction of the base portion 23, and the distal end portion 243 of the joint portion 24 faces the width direction of the base portion 23. That is, the joint portion 24 is formed in an L shape in plan view. Further, the joint portion 24 is provided with a joint portion 27 to be joined to the electrode pads 51 and 52 of the base 4 via the conductive bumps 13.

  In the quartz crystal resonator element 2 having the above-described configuration, the first and second excitation electrodes 31 and 32 configured at different potentials, and the first and second excitation electrodes 31 and 32 are connected to the electrode pad 51 of the base 4. , 52 are formed with lead electrodes 33, 34 drawn from the first and second excitation electrodes 31, 32.

  Part of the first and second excitation electrodes 31 and 32 is formed inside the groove 25 of the legs 21 and 22. For this reason, even if the crystal vibrating piece 2 is downsized, the vibration loss of the legs 21 and 22 is suppressed, and the CI value can be suppressed low.

  The first excitation electrode 31 is formed on both main surfaces of one leg portion 21, both side surfaces of the other leg portion 22, and both main surfaces of the tip end portion 221. Similarly, the second excitation electrode 32 is formed on both main surfaces of the other leg portion 22, both side surfaces of the one leg portion 21, and both main surfaces of the tip end portion 211.

  The extraction electrodes 33 and 34 are formed on the base portion 23 and the joint portion 24, and the first excitation electrodes formed on both main surfaces of the one leg portion 21 by the extraction electrode 33 formed on the base portion 23. 31 is connected to the first excitation electrodes 31 formed on both side surfaces of the other leg portion 22 and both main surfaces of the tip portion 221, and the extraction electrode 34 formed on the base portion 23 causes the other leg portion 22 to The second excitation electrodes 32 formed on both main surfaces are connected to the second excitation electrodes 32 formed on both side surfaces of one leg portion 21 and both main surfaces of the tip portion 211.

  The base 23 is formed with two through holes 26 penetrating both main surfaces of the piezoelectric vibration element plate 20, and the through holes 26 are filled with a conductive material. Through these through holes 26, extraction electrodes 33 and 34 are routed between both main surfaces of the base portion 23.

  In the crystal resonator 1 having the above-described configuration, as shown in FIG. 1, the joint portion 24 of the crystal resonator element 2 is connected to the pedestal portion 46 formed on the one main surface 42 of the base 4 through the conductive bump 13. Electromechanically ultrasonically bonded by the method. By this bonding, the excitation electrodes 31 and 32 of the quartz crystal vibrating piece 2 are electromechanically bonded to the electrode pads 51 and 52 of the base 4 via the extraction electrodes 33 and 34 and the conductive bumps 13, and are attached to the base 4. A crystal vibrating piece 2 is mounted. Then, the lid 7 is temporarily bonded to the base 4 on which the crystal vibrating piece 2 is mounted by the FCB method, and then heated in a vacuum atmosphere, whereby the bonding material 12, the first bonding layer 48, and the second bonding layer. 74 is melted, whereby the second bonding layer 74 of the lid 7 is bonded to the first bonding layer 48 of the base 4 via the bonding material 12, and the crystal resonator element 2 is hermetically sealed. Is manufactured. The conductive bump 13 is a plated bump made of a non-fluid member. The plating bump is a metal film formed by plating, specifically, a metal film formed by plating on a base metal layer (seed layer) by electrolytic plating or the like. The film thickness of the metal film can be adjusted by changing the plating conditions, and the metal film can be formed on the base metal layer in a thick film. In addition, since the shape of the upper surface of the metal film changes according to the shape of the base metal layer, the shape of the top surface of the metal film is made flat or convex by appropriately adjusting the shape of the base metal layer. be able to.

  Next, a method for manufacturing the crystal unit 1 and the base 4 will be described with reference to FIGS.

  As shown in FIG. 7, both main surfaces 81 and 82 of the wafer 8 made of glass material are etched by a wet etching method using a photolithography technique to form a large number of bases 4 (base forming step). FIG. 7 shows one of the bases 4 formed by etching both main surfaces 81 and 82 of the wafer 8. The base 4 has a cavity 45, a pedestal 46, and a through hole 49. . The pedestal 46, the cavity 45, the through hole 49, etc. of each base 4 may be formed using a mechanical processing method such as a dry etching method or a sand blast method.

  After the base forming step, a Ti layer made of Ti is formed by sputtering on the wafer 8 (both main surfaces 81 and 82 and the inner surface 491 of the through hole 49). After the formation of the Ti layer, a Cu layer made of Cu is formed by sputtering on the Ti layer by sputtering to form a first metal layer 92 as shown in FIG. 8 (first metal layer forming step). . The first metal layer 92 formed here becomes a first sputtered film made of a Ti film and a Cu film constituting the electrode pads 51 and 52 and the wiring pattern 55 of the base 4 shown in FIGS.

  After the first metal layer forming step, a resist is applied on the first metal layer 92 by dip coating to form a positive resist layer 97 (first resist layer forming step), and then the other main surface 82 of the wafer 8. The positive resist layer 97 formed at the opening end of the through-hole 49 on the side is exposed and developed by photolithography to form a pattern on the inner surface of the through-hole 49 as shown in FIG. Pattern formation step).

  After the pattern formation step, as shown in FIG. 10, the first metal layer 92 exposed on the inner surface 491 of the through hole 49 is subjected to Cu electroplating to form a filling layer 98 made of Cu (filling). Process).

  After the filling step, as shown in FIG. 11, the positive resist layer 97 is peeled and removed (resist peeling step).

  After the resist stripping step, a resist is applied on the first metal layer 92 and the filling layer 98 by dip coating to form a new positive resist layer 97 (second resist layer forming step). Thereafter, the electrode pads 51, 52, the positive resist layer other than the position where the wiring pattern 55 and the external terminal electrodes 53 and 54 are formed is exposed and developed, and the electrode pads 51 and 52 and the wiring pattern 55 of the base 4 shown in FIGS. And patterning the external terminal electrodes 53 and 54 (second pattern forming step shown in FIG. 12).

  After the second pattern formation step, the exposed first metal layer 92 is removed by metal etching (metal etching step shown in FIG. 13).

  After the metal etching step, as shown in FIG. 14, the positive resist layer 97 is stripped and removed (second resist stripping step).

  After the second resist stripping step, a photosensitive resin material is applied by dip coating in a state where one main surface 81 of the wafer 8 is masked, and the resin layer 96 is applied to the entire other main surface 82 side of the wafer 8. Form (resin layer forming step of FIG. 15).

  After the resin layer forming step, exposure and development are performed by a photolithography method to form a resin pattern 61 as shown in FIG. 16 (resin pattern forming step).

  After the resin pattern forming step, a Ti layer made of Ti is formed by sputtering on the first metal layer 92, the resin layer 96, and both the main surfaces 81 and 82 of the exposed wafer 8 by sputtering. After the Ti layer is formed, an Au layer is formed by sputtering on the Ti layer and laminated to form a second metal layer 93 (second metal layer forming step shown in FIG. 17). The second metal layer 93 formed here is a sputtered film made of a Ti film and an Au film constituting the first bonding layer 48 shown in FIGS. 1 and 2, and the electrode pads 51 and 52 shown in FIGS. The second sputtered film is composed of the Ti film and the Au film constituting the external terminal electrodes 53 and 54 and the wiring pattern 55.

  After the second metal layer forming step, as shown in FIG. 18, a resist is applied on the second metal layer 93 by a dip coating method to form a new positive resist layer 97 (third resist layer forming step). Thereafter, the first bonding layer 48 of the base 4, the electrode pads 51 and 52, and the wiring pattern 55 on the main surface 42 side of the base 4 are exposed and developed by photolithography, and are shown in FIGS. 1 to 3. The first bonding layer 48 of the base 4, the electrode pads 51 and 52, and the wiring pattern 55 on the one main surface 42 side of the base 4 are patterned (third pattern forming step shown in FIG. 19).

  After the third pattern forming step, a first plating layer 94 made of Au is plated on the exposed second metal layer 93 as shown in FIG. 20 (first plating forming step). Here, the formed first plating layer 94 constitutes a wiring pattern on the first principal surface 42 side of the first bonding layer 48 of the base 4, the electrode pads 51 and 52, and the base 4 shown in FIGS. 1 to 3. It becomes a plating film.

  After the first plating formation step, the positive resist layer 97 is peeled and removed (third resist peeling step shown in FIG. 21).

  After the third resist stripping step, a resist is applied on the exposed second metal layer 93 and the first plating layer 94 by dip coating to form a new positive resist layer 97 (fourth resist layer shown in FIG. 22). Forming step), after that, the positive resist layer 97 on the position where the external terminal electrodes 53 and 54 of the base 4 are to be formed is exposed and developed by photolithography, and the external terminals of the base 4 shown in FIGS. Pattern formation of the electrodes 53 and 54 is performed (fourth pattern formation step shown in FIG. 23).

  After the fourth pattern forming step, a second plating layer 95 made of Ni is plated on the exposed second metal layer 93 as shown in FIG. 24 (second plating forming step). The second plating layer 95 formed here becomes a plating film made of a Ni film constituting the external terminal electrodes 53 and 54 shown in FIGS.

  After the second plating formation step, a third plating layer 99 made of Au is plated on the second plating layer 95 as shown in FIG. 25 (third plating formation step). The third plating layer 99 formed here becomes a plating film made of an Au film constituting the external terminal electrodes 53 and 54 shown in FIGS.

  After the third plating formation step, the positive resist layer 97 is peeled off (fourth resist peeling step shown in FIG. 26).

  After the fourth resist peeling step, a resist is applied on the exposed second metal layer 93 and third plating layer 99 by dip coating to form a new positive resist layer 97 (fifth resist layer formation shown in FIG. 27). Step), and thereafter, as shown in FIG. 28, with respect to the positive resist layer 97 other than the position on which the first bonding layer 48 of the base 4, the electrode pads 51 and 52, the external terminal electrodes 53 and 54, and the wiring pattern 55 are formed. The first bonding layer 48 of the base 4, the electrode pads 51 and 52, the external terminal electrodes 53 and 54, the wiring pattern 55, and the outer shape of the base 4 shown in FIGS. Pattern formation is performed (fifth pattern formation step).

  After the fifth pattern forming step, as shown in FIG. 29, the exposed second metal layer 93 is removed by metal etching (second metal etching step).

  After the second metal etching step, the positive resist layer 97 is peeled and removed to form a large number of bases 4 on the wafer 8 as shown in FIG. 30 (fifth resist peeling step).

  After the fifth resist stripping step, the wafer 8 is diced to divide a large number of the bases 4 into individual bases 4 (single bases step). The base 4 shown is manufactured. In dicing in this base singulation process, the wafer 8 is cut between adjacent bases 4, specifically, at the outer peripheral edge 47 in which the tapered surface 471 of the other main surface 43 of each base 4 is formed. . As shown in FIG. 30, the other main surface 82 of the wafer 8 in this cutting part is protected by a resin pattern 61, thereby suppressing the occurrence of chipping due to dicing. In particular, as in the first embodiment, when the cutting blade is advanced from one main surface 81 of the wafer 8 to the other main surface 82 and finally the resin pattern 61 is cut, the wafer 8 (base 4 base material) The occurrence of chipping to) can be satisfactorily suppressed.

  Then, the crystal resonator element 2 shown in FIG. 6 is arranged on the base 4 shown in FIG. 31, and the crystal oscillator piece 2 is electromechanically ultrasonically bonded to the base 4 through the conductive bumps 13 by the FCB method. The crystal vibrating piece 2 is mounted and held on the base 4. In another step, the bonding material 12 is laminated on the second bonding layer 74 of the lid 7 shown in FIG. Thereafter, the lid 7 is arranged on the base 4 on which the crystal vibrating piece 2 is mounted and held, and the first bonding layer 48 of the base 4 and the second bonding layer 74 of the lid 7 are electromechanical by the FCB method through the bonding material 12. The quartz crystal resonator 1 shown in FIG. 1 is manufactured by ultrasonic bonding.

  Of the manufacturing steps described above, the step of forming the base 4 in the base forming step corresponds to the forming step referred to in the present invention. Moreover, the process of forming the external terminal electrodes 53 and 54 on the other main surface 43 of the base 4 through the processes shown in FIGS. 8 to 13, 16 and 20 to 28 corresponds to the electrode forming process in the present invention. 15 and 16, the resin pattern 61 is formed on the other main surface 43 of the base 4, whereby the region 432 between the outer peripheral edge 47 of the other main surface and the electrode formation regions 56 and 57. The step of coating the substrate with a wetting prevention film (that is, the resin pattern 61) made of a resin material having lower solder wettability than the external terminal electrodes 53 and 54 corresponds to the coating step in the present invention. In the base forming step of the manufacturing method according to the first embodiment, the base 4 is formed by a wet etching method using a photolithography technique, but the forming step of the present invention is not limited to this, for example, The base 4 may be formed by dry etching or sand blasting. Alternatively, the base 4 may be formed by combining two or more of the wet etching method, the dry etching method, and the sand blasting method. For example, the cavity 45 is formed by the wet etching method, and the through hole is formed by the sand blasting method. 26 may be formed.

  In the crystal resonator 1 according to the first embodiment, as described above, the space between the outer peripheral edge 47 of the other main surface 43 of the base 4 and the external terminal electrodes 53 and 54 is covered with the resin pattern 61 (resin material). In the soldering of the external terminal electrodes 53 and 54 to the mounting substrate 101, the solder is prevented from creeping up to the one main surface 42 along the outer surface of the base 4. Further, as described above, in the crystal resonator 1 according to the first embodiment, the resin pattern 61 is formed on the entire end portion along the outer peripheral edge 47 of the other main surface 43 of the base 4. The occurrence of chipping at the time of dicing the wafer 8 made of a glass material on which a plurality of bases 4 are formed is suppressed. In addition, the crystal resonator 1 according to the first embodiment has high strength against the bending stress of the mounting substrate 101 when mounted on the mounting substrate 101 as recognized by the bending test described below.

<Bending test>
In this bending test, as the test object, the external terminal electrodes 53 and 54 of the crystal resonator 1 are soldered to the mounting substrate 101 (see FIG. 4), and the crystal resonator 1 is mounted on the mounting substrate 101 (hereinafter referred to as “test object”). , Called mounting board). Here, a substrate made of a glass epoxy printed wiring board having a thickness of 1.5 mm, a width of 40 mm, and a length of 100 mm was used as the mounting substrate 101. Further, in the quartz resonator 1, the base 4 has a thickness of 210 μm, a width of 1.0 mm, and a length of 2.0 mm, and the lid 7 has a thickness of 145 μm, a width of 0.95 mm, and a length of 1. mm. A 95 mm one was used. Then, the crystal unit 1 is mounted at the center of the mounting substrate 101 so that the long side of the crystal unit 1 is arranged along the length direction of the mounting substrate 101.

  In the bending test, both ends of the mounting substrate in the length direction (3 mm from each short side) are fixed, pass through the center of the mounting surface on which the crystal unit 1 is mounted, and the short side of the crystal unit 1 It was performed by applying a load at a bending speed of 1 mm / min to the entire portion along the direction. When the bending amount was 3 mm, 5 mm, and 7 mm, the presence or absence of cracks in the base 4 and the lid 7 of the crystal unit 1 was examined. The results are shown in Table 1.

In Table 1, Example 1 is a mounting substrate on which the crystal resonator 1 according to the first embodiment is mounted. Further, the comparative example is a mounting substrate on which a crystal resonator having no resin pattern formed on the base is mounted. The configuration of the mounting substrate of Comparative Example 1 is exactly the same as the configuration of the mounting substrate of Example 1 except that no resin pattern is formed on the base of the crystal unit.
In Table 1, the evaluation criteria indicated by “◯” and “X” are as follows. That is, when five mounting substrates as test objects are prepared and the bending test is performed on these mounting substrates, the number of mounting substrates on which cracks are recognized is 0. In the case where the number of mounting substrates in which cracks are recognized is one or more, “x” is given.

  From the results of the bending test shown in Table 1, in Example 1 in which the crystal resonator 1 according to the first embodiment was mounted, the crystal resonator 1 of the crystal resonator 1 was observed when the bending amount was 3 mm, 5 mm, and 7 mm. It was confirmed that no cracks occurred in the base 4 and the lid 7. On the other hand, in Comparative Example 1 in which a crystal resonator having no resin pattern formed on the other main surface of the base was mounted, it was recognized that cracks occurred when the bending amount was 3 mm. That is, the crystal resonator 1 according to the first embodiment (particularly, the base 4 of the crystal resonator 1) has a mounting substrate 101 as compared with a crystal resonator in which no resin pattern is formed on the other main surface of the base. It was confirmed that the mounting substrate 101 has a high strength against the bending stress during mounting.

  In such a crystal resonator 1 according to the first embodiment, it is considered that the high strength against the bending stress of the mounting substrate 101 is brought about for the following reason. That is, in the crystal unit 1 according to the first embodiment, the entire end portion along the outer peripheral edge of the other main surface 43 of the base 4 is covered with the resin pattern 61, and the occurrence of chipping that may occur in the manufacturing process is suppressed. Therefore, when the mounting substrate 1 is bent in a state where the crystal resonator 1 is mounted on the mounting substrate 101, cracking occurs in the base 4 due to chipping of the other main surface 43 of the base 4. It is prevented. In addition, in the crystal resonator 1 according to the first embodiment, all regions except the regions (electrode forming regions 56 and 57) where the external terminal electrodes 53 and 54 are formed on the other main surface 43 of the base 4 are made of resin. Since it is covered with the pattern 61, the bending stress of the mounting substrate 101 is dispersed by the resin pattern 61 when the mounting substrate 101 is bent while being mounted on the mounting substrate 101. That is, the bending stress transmitted from the mounting substrate 101 to the base material (glass material) of the base 4 is reduced by the resin pattern 61. For this reason, the crystal resonator 1 according to the first embodiment has high strength against bending of the mounting substrate 101 when mounted on the mounting substrate 101.

<Embodiment 2>
In the crystal resonator 1 according to the second embodiment, the configuration of the resin pattern 61 on the other main surface 43 of the base 4 is different from that of the first embodiment. Other configurations are the same as those of the crystal resonator 1 according to the first embodiment, and the same effects as those of the first embodiment are the same as those of the crystal resonator 1 according to the first embodiment. It has a modification. Therefore, in the description of the crystal resonator 1 according to the second embodiment, differences from the crystal resonator 1 according to the first embodiment will be mainly described.

  In the base 4 of the crystal unit 1 according to the second embodiment, the resin pattern 61 is provided only on the tapered surface 471 formed along the outer peripheral edge 47 of the other main surface 43 as shown in FIG. Yes.

  In the base 4 of the crystal resonator 1 according to the second embodiment as described above, since the entire end portion along the outer peripheral edge 47 of the other main surface 43 of the base 4 is covered with the resin pattern 61, the external terminal electrode 53. , 54 are soldered to the mounting substrate 101, the solder is transferred along the outer surface of the base 4 by the resin pattern 61 covering the entire end portion along the outer peripheral edge 47 of the other main surface 43 of the base 4. Climbing to 42 is prevented.

  In the manufacturing process of the base 4 of the crystal unit 1 according to the second embodiment, when dicing the wafer 8 made of a glass material on which the plurality of bases 4 are formed, the other main surface 43 of the base 4 is formed. The occurrence of chipping is suppressed by the resin pattern 61 formed on the entire end along the outer peripheral edge 47. That is, in the crystal resonator 1 according to the second embodiment, the entire end portion along the outer peripheral edge 47 of the other main surface 43 is protected by the resin pattern 61 and the occurrence of chipping in the base 4 is suppressed. Compared with a crystal resonator in which no resin pattern is formed on the other main surface of the base, the substrate has higher strength against bending stress of the mounting substrate 101 when mounted on the mounting substrate 101.

<Embodiment 3>
In the crystal resonator 1 according to the third embodiment, the configuration of the resin pattern 61 on the other main surface 43 of the base 4 is different from that of the first embodiment. Other configurations are the same as those of the crystal resonator 1 according to the first embodiment, and the same effects as those of the first embodiment are the same as those of the crystal resonator 1 according to the first embodiment. It has a modification. Therefore, in the description of the crystal resonator 1 according to the third embodiment, differences from the crystal resonator 1 according to the first embodiment will be mainly described.

  In the base 4 of the crystal unit 1 according to the third embodiment, the resin pattern 61 is formed in a region 432 between the outer peripheral edge 47 of the other main surface 43 and the external terminal electrodes 53 and 54 as shown in FIG. Only provided.

  In the base 4 of the crystal resonator 1 according to the second embodiment as described above, the region 432 between the outer peripheral edge 47 of the other main surface 43 and the external terminal electrodes 53 and 54 is protected by the resin pattern 61. When the external terminal electrodes 53 and 54 are soldered to the mounting substrate 101, the solder is formed by the resin pattern 61 that protects the region 432 between the outer peripheral edge 47 of the other main surface 43 and the external terminal electrodes 53 and 54. 4 is prevented from climbing up to one main surface 42 along the outer surface.

<Embodiment 4>
The crystal resonator 1 according to the fourth embodiment is different from the above-described first embodiment in the configuration inside the through hole 49 and the configuration of the resin pattern 61 on the other main surface 43 of the base 4. Other configurations are the same as those of the crystal resonator 1 according to the first embodiment, and the same effects as those of the first embodiment are the same as those of the crystal resonator 1 according to the first embodiment. It has a modification. Therefore, in the description of the crystal resonator 1 according to the fourth embodiment, differences from the crystal resonator 1 according to the first embodiment will be mainly described.

  In the through hole 49 formed in the base 4 of the crystal unit 1 according to the fourth embodiment, as shown in FIG. 34, a filler made of Cu is a first sputtered film (reference numeral in FIG. 34). 92) and a filling layer 98 is formed, and a resin material constituting the resin pattern 61 is filled. Specifically, in the base 4 of the crystal unit 1 according to the fourth embodiment, the filling in the through-hole 49 is larger than the base 4 (see FIG. 1) of the crystal unit 1 according to the first embodiment. The thickness of the layer 49 is set to be thin, and a part of the resin pattern 61 on the other main surface 43 of the base 4 enters the inside of the through hole 49. Due to the anchor effect of the resin pattern 61 entering the through hole 49 as described above, in the crystal unit 1 according to the fourth embodiment, the bondability between the base material of the base 4 and the resin pattern 61 is improved. It has been.

  In the base 4 of the crystal unit 1 according to the fourth embodiment, as shown in FIGS. 34 and 35, electrode forming regions 56 and 57 in which external terminal electrodes 53 and 54 are formed at both ends in the longitudinal direction are provided. Is set. As shown in FIG. 35, the electrode forming regions 56 and 57 are arranged side by side along the longitudinal direction. The electrode forming regions 56 and 57 are each set in a rectangular shape, and both end portions 561, 563, 571, and 573 in the longitudinal direction and one end portions 562 and 572 in the short direction of the electrode forming regions 56 and 57 are respectively set. The taper surface 471 is formed along the outer peripheral edge of the other main surface 43.

  Further, in the electrode formation regions 56 and 57 of the other main surface 43, contact regions 58 and 59 where the external electron electrodes 53 and 54 and the wiring pattern 55 are in contact are set. When the external terminal electrodes 53 and 54 and the wiring pattern 55 are in contact, the external electronic electrodes 53 and 54 and the wiring pattern 55 are electrically connected. Specifically, a contact region 58 in which the wiring pattern 55 and the external terminal electrode 53 are in contact with each other is provided in the electrode formation region 56, and a contact region in which the wiring pattern 55 and the external terminal electrode 54 are in contact with each other in the electrode formation region 57. 59 is provided.

  The wiring pattern 55 is formed from the main surface 42 of the base 4 through the inner side surface 491 of the through hole 49 (see below) so as to electrically connect the electrode pads 51 and 52 and the external terminal electrodes 53 and 54. The wiring pattern 55 is formed on the entire electrode forming regions 56 and 57 (including the contact regions 58 and 59) of the other main surface 43 of the base 4.

  In addition, the resin pattern 61 is formed in the entire area except for the contact areas 58 and 59 on the other main surface 43 of the base 4.

  The external terminal electrodes 53 and 54 are formed on the resin pattern 61. Specifically, on the resin pattern 61 formed in the electrode formation regions 56 and 57 (all regions except the contact regions 58 and 59 of the electrode formation regions 56 and 57) on the other main surface 43 and the contact with the other main surface 43. External terminal electrodes 53 and 54 are formed on the wiring pattern 55 formed in the regions 58 and 59.

  In manufacturing the base 4 of the crystal unit 1 according to the fourth embodiment, the other main surface 82 of the wafer 8 is formed in the resin pattern forming step (see FIG. 16) after the resin layer forming step shown in FIG. The resin pattern 61 is formed in all areas except the contact areas 58 and 59. Then, the external terminal electrodes 53 and 54 are formed on the resin pattern 61 through the same manufacturing process as in the first embodiment shown in FIGS. In the manufacture of the base 4 of the crystal unit 1 according to the fourth embodiment, after the resin pattern forming step (see FIG. 16), the first metal layer 92, the resin layer 96, and both main surfaces 81 of the exposed wafer 8 are used. , 82 before the second metal layer forming step of forming the second metal layer 93, the resin layer 96 is subjected to plasma irradiation (for example, argon plasma irradiation) to roughen the surface of the resin layer 96. May be. When the surface of the resin layer 96 is roughened in this way, the anchoring effect that Ti constituting the second metal layer 93 enters the irregularities on the surface of the roughened resin layer 96 causes the resin layer 96 and the first The bondability of the two metal layers 93 can be improved. That is, the bonding property between the resin pattern 61 and the external terminal electrodes 53 and 54 on the other main surface 43 of the base 4 can be improved.

  In the base 4 of the crystal unit 1 according to the fourth embodiment as described above, the resin pattern 61 is formed in the entire region except the contact regions 58 and 59 of the other main surface 43, and the outside of the other main surface 43 of the base 4. Since the entire end portion along the peripheral edge 47 is covered with the resin pattern 61, when the external terminal electrodes 53 and 54 are soldered to the mounting substrate 101, the end portion along the outer peripheral edge 47 of the other main surface 43 of the base 4. The resin pattern 61 covering the whole prevents the solder from creeping up to the one main surface 42 along the outer surface of the base 4.

  In the manufacturing process of the base 4 of the crystal unit 1 according to the fourth embodiment, when dicing the wafer 8 made of a glass material on which the plurality of bases 4 are formed, the other main surface 43 of the base 4 is formed. The occurrence of chipping is suppressed by the resin pattern 61 formed on the entire end along the outer peripheral edge 47. That is, in the crystal resonator 1 according to the fourth embodiment, the entire end portion along the outer peripheral edge 47 of the other main surface 43 is protected by the resin pattern 61, and the occurrence of chipping in the base 4 is suppressed. Compared with a crystal resonator in which no resin pattern is formed on the other main surface of the base, the substrate has higher strength against bending stress of the mounting substrate 101 when mounted on the mounting substrate 101.

  In addition, in the base 4 of the crystal resonator 1 according to the fourth embodiment, since the resin pattern 61 is formed in the entire region except the contact regions 58 and 59 of the other main surface 43, At the time of mounting, the mounting substrate 101 has higher strength against bending.

  Table 2 below shows the results of bending tests similar to those in the first embodiment. In the bending test in the fourth embodiment, in addition to the presence or absence of cracks when the bending amount was 3 mm, 5 mm, and 7 mm, the presence or absence of cracks when the bending amount was 9 mm was also examined.

  In Table 2, Example 2 is a mounting substrate on which the crystal unit 1 according to the fourth embodiment is mounted. Comparative Example 1 is the same as Comparative Example 1 shown in Table 1 above. In Table 2, the evaluation criteria indicated by “◯” and “X” are as follows. That is, when five mounting substrates as test objects are prepared and the bending test is performed on these mounting substrates, the number of mounting substrates on which cracks are recognized is 0. In the case where the number of mounting substrates in which cracks are recognized is one or more, “x” is given.

  From the results of the bending test shown in Table 2, in Example 2 in which the crystal resonator 1 according to the fourth embodiment is mounted, the crystal resonator is obtained when the bending amount is 3 mm, 5 mm, 7 mm, and 9 mm. It was confirmed that no cracks occurred in the base 4 and the lid 7 of 1. That is, the crystal resonator 1 according to the fourth embodiment (particularly, the base 4 of the crystal resonator 1) has a mounting substrate 101 as compared with a crystal resonator in which no resin pattern is formed on the other main surface of the base. At the time of mounting, it was confirmed that the mounting substrate 101 has high strength against bending stress.

  Such a high strength against the bending stress of the mounting substrate 101 of the crystal resonator 1 according to the fourth embodiment is brought about for the same reason as the crystal resonator 1 according to the first embodiment. Further, in the crystal unit 1 according to the fourth embodiment, the resin pattern 61 is formed in the entire region except for the contact regions 58 and 59 of the other main surface 43 of the base 4, and according to the fourth embodiment. In the crystal unit 1, the resin pattern 61 is also formed in the electrode formation regions 56 and 57 on the other main surface 43 of the base 4. In other words, in the crystal resonator 1 according to the fourth embodiment, a wider area of the other principal surface 43 of the base 4 is protected by the resin pattern 61 than in the crystal resonator 1 according to the first embodiment. Therefore, in the crystal resonator 1 according to the fourth embodiment, when the mounting substrate 101 is bent while being mounted on the mounting substrate 101, the bending stress of the mounting substrate 101 causes the crystal resonator of the first embodiment to be bent. 1 is distributed over a wider area of the other main surface 43 of the base 4 than the first one. For this reason, the crystal resonator 1 according to the fourth embodiment has higher strength against the bending stress of the mounting substrate 101 when mounted on the mounting substrate 101 than the crystal resonator 1 according to the first embodiment. Have.

  In the quartz resonator 1 according to the first to fourth embodiments, the filling layer 98 is configured by a Cu plating layer formed by plating on the sputtered film (see reference numeral 92 in FIG. 1) on the inner surface of the through hole 49. However, the filling layer 98 is not limited to this. For example, the filling layer 98 may be configured by filling the through hole 49 with a conductive material such as a metal paste (a paste-like resin material to which a conductive filler is added). Alternatively, in the case where metal films (first sputtered film and second sputtered film indicated by reference numerals 92 and 93 in FIG. 1) are formed on the inner surface 491 of the through hole 49 as in the first to fourth embodiments. The filling layer 98 may be configured by filling the through hole 49 with a non-conductive material such as resin. For example, if the filling layer 98 is made of a resin of the same material as the resin pattern 61 formed in the entire region excluding the electrode forming regions 56 and 57 on the other main surface 43 (including the tapered surface 471), the base material of the base 4 Bondability between the filling layer 98 and the resin pattern 61 can be improved.

  Further, in the crystal unit 1 according to the first to fourth embodiments, the electrode pads 51 and 52 and the wiring pattern 55 on the one main surface 42 side of the base 4 are Ti films formed on the base material of the base 4 and A first sputtered film made of a Cu film (see reference numeral 92 in FIGS. 1 and 34) and a second sputtered film made of a Ti film and an Au film formed on the first sputtered film (see FIGS. 1 and 34). 93) and a plating film made of an Au film plated on the second sputtered film (see reference numeral 94 in FIGS. 1 and 34). The electrode configuration of the pattern 55 is not limited to this, and a sputtered film made of a Ti film and an Au film is directly formed on the base 4 substrate without using a sputtered film made of a Ti film and a Cu film. An Au film is Or it may be formed configuration. That is, the sputtered film of the wiring pattern 55 on the inner surface 491 of the through hole 49 may be composed of a Ti film and an Au film. As described above, when the sputtered film on the inner side surface 491 of the through hole 49 is composed of a Ti film and an Au film, the filling layer 98 is formed by plating on the sputtered film of the wiring pattern 55 on the inner side surface 491 of the through hole 49. When Au is an AuSn plating layer, the adhesive strength between the sputtered film of the wiring pattern 55 on the inner surface 491 and the filling layer 98 can be improved.

  Further, in the base 4 of the crystal unit 1 according to the first to fourth embodiments, the first bonding layer 48 is a sputtered film made of a Ti film and an Au film formed on the base material of the base 4 by sputtering as described above. (See reference numeral 93 in FIGS. 1 and 34) and a plating film made of an Au film plated on the sputtered film (see reference numeral 94 in FIGS. 1 and 34). It is not limited to. For example, the first bonding layer 48 includes a sputtering film formed of a Ti film and an Au film formed by sputtering on a base material of the base 4, a Ni plating film formed by plating on the sputtering film, and a Ni plating film. It may be composed of an Au plating film formed by plating thereon. Thus, when the Ni plating film is interposed between the sputtered film and the Au plating film, the sputtered film (Au film) can be prevented from being eroded by the bonding material 12 (brazing material), and the base 4 and the lid 7 can be prevented. The strength of bonding with can be improved.

  Moreover, in the base 4 of the crystal unit 1 according to the first to fourth embodiments, the external terminal electrodes 53 and 54 are the first sputtered films made of the Ti film and the Cu film as described above (see reference numeral 92 in FIG. 1). A second sputtered film (see reference numeral 93 in FIGS. 1 and 34) formed on the Ti film and the Au film formed thereon, and a Ni plated film made of Ni formed on the second sputtered film (see FIG. 1). And reference numeral 95 in FIG. 34) and an Au plating film made of Au plated on the Ni plating film (see reference numeral 99 in FIGS. 1 and 34). For example, an Au plated film made of Au is formed directly (not through a Ni plated film made of Ni) on the second sputtered film (see reference numeral 93 in FIGS. 1 and 34). There may be. Alternatively, an Au / Cu alloy plating film or a Pd plating film is formed on the second sputtered film (see reference numeral 93 in FIGS. 1 and 34) instead of the Ni plating film, and this Au / Cu alloy plating film is formed. Alternatively, an Au plating film may be formed on the Pd plating film.

  Further, in the base 4 of the crystal unit 1 according to the first to fourth embodiments, the first sputtered film (see reference numeral 92 in FIGS. 1 and 34) constituting the electrode pads 51 and 52 and the wiring pattern 55 is the base 4. The Ti film formed by sputtering on the base material and the Cu film formed by sputtering on the Ti film are not limited to this structure. For example, the first sputtered film is The Ti film formed by sputtering on the base material of the base 4 and the Au film formed by sputtering on the Ti film may be used. Also in this case, the filling layer 98 formed by plating on the inner side surface of the through hole 49 may be a Cu plating layer as in the first to fourth embodiments.

  In addition, in the base 4 of the crystal unit 1 according to the first to fourth embodiments, the second sputtered film (see FIGS. 1 and 34) constituting the electrode pads 51 and 52, the wiring pattern 55, and the external terminal electrodes 53 and 54. The reference numeral 93) includes a Ti film formed by sputtering on the substrate of the first sputtered film (see reference numeral 92 in FIGS. 1 and 34), and an Au film formed by sputtering on the Ti film. However, the present invention is not limited to this configuration. For example, the second sputtered film includes a Mo film formed by sputtering on the first sputtered film, and an Au film formed by sputtering on the Mo film. It may be comprised.

Further, in the crystal unit 1 according to the first to fourth embodiments, the other main surface 43 of the base 4 has a wetting prevention film in which a region 432 between the outer peripheral edge 47 and the external terminal electrodes 53 and 54 is made of a resin material. Although it is covered with (resin pattern 61), the wetting prevention film is not limited to one made of a resin material as long as it is made of a material having lower solder wettability than the external terminal electrodes 53 and 54. In the present invention, the material having lower solder wettability than the external electrodes (external terminal electrodes 53 and 54) specifically refers to a material having lower solder wettability than the material constituting the surface of the external electrode. . For example, when the surface of the external electrode is made of a metal material, the material constituting the wetting prevention film is not only a resin material but also a solder wettability than a metal such as an insulating material (SiO ₂ or SiO). Low material can be used. Then, as in the first to fourth embodiments, when the surface of the external electrode (external terminal electrode 53, 54) is a metal plated on the Ni plating film, that is, an Au plating film, the wetting prevention film In addition to the resin material, for example, a material having lower solder wettability than an Au plating film such as Mo, W, Ti, or the like can be used as the material constituting the material.

  Further, in the crystal unit 1 according to the first to fourth embodiments, the other main surface 43 of the base 4 is formed with a tapered surface along the entire outer peripheral edge 47, but the present invention has such a configuration. It is not limited to. For example, the other main surface 43 of the base 4 may be formed with a tapered surface only at a portion of the outer peripheral edge 47 facing the external terminal electrodes 53 and 54. Or the other main surface 43 of the base 4 may be comprised by the flat surface as a whole. Also in the base 4 having such a configuration, the region 432 between the outer peripheral edge 47 of the other main surface 43 and the external terminal electrodes 53 and 54 (electrode forming regions 56 and 57) is soldered more than the external terminal electrodes 53 and 54. If it is covered with a wetting prevention film made of a material with low wettability, similarly to the first to fourth embodiments, the solder wetting and spreading on the other main surface 43 is suppressed, and the other main surface 43 is transmitted to the outer surface. Therefore, it is possible to prevent the solder from creeping onto the main surface 42.

  Moreover, in Embodiment 1-4, although glass is used as a material of the base 4 and the lid | cover 7, both the base 4 and the lid | cover 7 are not limited to what was comprised using glass. For example, it may be configured using quartz.

  In Embodiments 1 to 4, AuSn is mainly used as the bonding material 12, but the bonding material 12 is not particularly limited as long as the base 4 and the lid 7 can be bonded. For example, it may be configured using a Sn alloy brazing material such as CuSn.

  Further, in the above-described first to fourth crystal resonators 1, the tuning-fork type crystal vibrating piece 2 shown in FIG. 6 is used as the crystal vibrating piece, but the AT-cut crystal vibrating piece 2 shown in FIG. 36 is used. Also good. In the crystal resonator 1 using the AT cut crystal resonator element 2, electrodes are formed on the base 4 in accordance with the AT cut crystal resonator element 2, but the configuration according to the present invention is the same as in the first to fourth embodiments. The same effects as in the first to fourth embodiments are obtained.

  In addition to the crystal vibrating piece 2, an IC chip may be mounted on the base 4 according to the first to fourth embodiments to configure an oscillator. When an IC chip is mounted on the base 4, electrodes corresponding to the electrode configuration of the IC chip are formed on the base 4.

  The present invention can be implemented in various other forms without departing from the spirit or main features thereof. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Crystal resonator 11 Internal space 12 Bonding material 13 Conductive bump 2 Crystal vibrating piece (electronic component element)
20 Piezoelectric vibrating base plate 21, 22 Leg part 211, 221 Tip part 23 Base part 231 One end face 232 Other end face 233 Side face 24 Joint part 241 Short side part 242 Long side part 243 Tip part 25 Groove part 26 Through-hole 27 Joint part 31, 32 Excitation electrode 33, 34 Extraction electrode 4 Base (sealing member for electronic component package as first sealing member)
41 bottom 42 one main surface 43 other main surface 432 region 44 wall portion 45 cavity 451 bottom surface 452 one end portion 46 pedestal portion 47 outer peripheral edge 471 tapered surface 48 first bonding layer 49 through hole 491 inner side surface 51, 52 electrode pads 53, 54 External terminal electrode (external electrode)
55 Wiring pattern 56, 57 Electrode forming area 58, 59 Contact area 61 Resin pattern (wetting prevention film)
7 Lid (second sealing member)
71 Top portion 72 Primary surface 73 Wall portion 731 Inner side surface 732 Outer side surface 733 Top surface 74 Second bonding layer 8 Wafer 81,82 Main surface 92 First metal layer 93 Second metal layer 94 First plating layer 95 Second plating layer 96 Resin layer 97 Positive resist layer 98 Filling layer 99 Third plating layer 101 Mounting substrate 102 Solder 103 Void

Claims (7)

A first sealing member on which an electronic component element is mounted on one main surface, and a second sealing member that is bonded to the one main surface of the first sealing member and hermetically seals the electrodes of the electronic component element; An electronic component package sealing member used as the first sealing member of an electronic component package comprising:
A tapered surface that is inclined from the other main surface toward the one main surface is formed along the outer peripheral edge of the other main surface of the first sealing member.
An external electrode is provided on the tapered surface of the other main surface along the tapered surface, and a region between the outer peripheral edge and the external electrode on the outer peripheral edge side of the external electrode in the tapered surface of the other main surface. Is coated with a wetting prevention film made of a resin material having lower solder wettability than the external electrode, and the wetting prevention film is formed along the outer peripheral edge of the other main surface of the first sealing member. An electronic component package sealing member characterized by comprising: The electronic component package sealing member according to claim 1 ,
An electronic component package sealing member, wherein an entire end portion of the other main surface along the outer peripheral edge is covered with the wetting prevention film. The electronic component package sealing member according to claim 2 ,
An electronic component package sealing member, wherein all regions except the region where the external electrode is formed are covered with the wetting prevention film on the other main surface. The electronic component package sealing member according to claim 3 ,
A wiring pattern for electrically connecting the electronic component element mounted on the one main surface to the external electrode is provided on the other main surface,
On the other main surface, a contact area where the wiring pattern and the external electrode are in contact is set,
The wetting prevention film is formed in all regions except the contact region of the other main surface,
The external electrode is formed on a wiring pattern provided in the contact region and on the wetting prevention film. An electronic component package sealing member, wherein: A first sealing member on which an electronic component element is mounted on one main surface, and a second sealing member that is bonded to the one main surface of the first sealing member and hermetically seals the electrodes of the electronic component element; An electronic component package comprising:
5. The electronic component package according to claim 1, wherein the first sealing member is a sealing member for an electronic component package according to claim 1 . A first sealing member on which an electronic component element is mounted on one main surface; a second sealing member that is joined to the one main surface of the first sealing member and hermetically seals the electrodes of the electronic component element; A method for manufacturing an electronic component package sealing member used as the first sealing member of an electronic component package comprising:
The electronic component package sealing member is formed such that a tapered surface inclined from the other main surface toward the one main surface is formed along an outer peripheral edge of the other main surface of the first sealing member. A molding process to
Forming an external electrode along the tapered surface on the tapered surface of the electrode forming region on the other principal surface of the electronic component package sealing member; and
Of the tapered surface of the electrode forming region on the other main surface, on the outer peripheral edge side of the external electrode, the region between the outer peripheral edge of the other main surface and the electrode forming region is more solderable than the external electrode. An electronic component package comprising: a coating step of covering with a wetting prevention film made of a low resin material and forming the wetting prevention film along an outer peripheral edge of the other main surface of the first sealing member. Method of manufacturing sealing member. It is a manufacturing method of the sealing member for electronic component packages according to claim 6 ,
Wherein the molding process, molding the plurality of the electronic component package sealing member in a wafer made of a glass material, wherein in the coating step, the other major surface the outer circumferential edge before Symbol wetting prevention film across the end portion taken along the line And then dicing the wafer to divide the electronic component package into pieces.

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