JP5757221B2 - Electronic component package, electronic component package sealing member, and method of manufacturing electronic component package sealing member - Google Patents

Description

  The present invention provides an electronic component package in which electrodes of an electronic component element are sealed by a plurality of sealing members, an electronic component package sealing member used as a sealing member for an electronic component package, and the electronic component package sealing. The present invention relates to a manufacturing method of a stop member.

  An internal space of a package of electronic components such as a piezoelectric vibration device (hereinafter referred to as an electronic component package) is hermetically sealed to prevent deterioration of characteristics of electrodes of electronic component elements mounted in the internal space.

  As this type of electronic component package, there is one in which it is constituted by two sealing members (base and lid), and its casing is constituted by a rectangular parallelepiped package. In such an internal space of the electronic component package, an electronic component element such as a piezoelectric vibrating piece is held and bonded to the base. And the electrode of the electronic component element of the internal space of an electronic component package is airtightly sealed by joining a base and a lid | cover (refer patent document 1).

JP 2011-1114836 A

  The base of the crystal resonator disclosed in Patent Document 1 (the electronic component in the present invention) is formed into a box-shaped body from the bottom and the wall, and a cavity surrounded by the bottom and the wall is formed. The wall surface of the base cavity (inner side surface of the wall portion) is tapered. For this reason, the mounting area (mounting area) of the electronic component element in the cavity is reduced only in the tapered portion as compared with the shape in which the wall surface is vertically formed.

  Accordingly, in order to solve the above-described problems, the present invention provides an electronic component package sealing member, an electronic component package, and an electronic component package sealing member that can increase the mounting area of the electronic component element in the cavity. It aims to provide a method.

In order to achieve the above object, an electronic component package sealing member according to the present invention is an electronic device used as the sealing member of an electronic component package that hermetically seals an electrode of an electronic component element with a plurality of sealing members. In the component package sealing member, a cavity for mounting an electronic component element is formed, and the wall surface of the cavity includes a curved surface that is continuously formed on the bottom surface of the cavity and bulges outward in the width direction of the cavity. The portion of the curved surface that swells most outward in the width direction of the cavity is disposed outward in the width direction of the cavity from the end of the curved surface and the connection end of the curved surface with the bottom surface of the cavity. It is characterized by.

  According to the present invention, since the wall surface of the cavity includes a curved surface that swells outward in the width direction of the cavity, the cavity has a shape in which all the wall surfaces of the cavity are tapered as in the above-described prior art. It is possible to increase the mounting area of the electronic component element.

In order to achieve the above object, a sealing member for an electronic component package according to the present invention is used as the sealing member of an electronic component package in which an electrode of an electronic component element is hermetically sealed by a plurality of sealing members. In the electronic component package sealing member, a cavity for mounting an electronic component element is formed, and the wall surface of the cavity is formed continuously from the bottom surface of the cavity and from a preset reference point in the cavity. A curved surface composed of an aggregate of radially extending points is included, and there are a plurality of the preset reference points, the plurality of reference points are arranged on one surface, and the curved surface of the cavity is outward in the width direction. The most swollen portion is disposed outward in the width direction of the cavity from the end of the curved surface and the connection end of the curved surface with the bottom surface of the cavity. It is characterized in.

  According to the present invention, the wall surface of the cavity includes a curved surface formed by an aggregate of points radially extending from a preset reference point in the cavity, and the preset reference points are plural and the plural Since the reference point is arranged on one surface, it is possible to increase the mounting area of the electronic component element in the cavity as compared with the case where all the wall surfaces of the cavity are tapered as in the prior art described above. It becomes.

  In order to achieve the above object, an electronic component package according to the present invention is an electronic component package in which an electrode of an electronic component element is hermetically sealed by a plurality of sealing members. It is a sealing member for electronic component packages of the invention.

  According to the present invention, since at least one of the sealing members is the electronic component package sealing member of the present invention, the effect of the electronic component package sealing member of the present invention is achieved.

In order to achieve the above object, a method for manufacturing a sealing member for an electronic component package according to the present invention includes the sealing member for an electronic component package in which an electrode of an electronic component element is hermetically sealed by a plurality of sealing members. In the manufacturing method of the electronic component package sealing member used as the electronic component package sealing member, the forming step includes forming a cavity for mounting the electronic component element on the base material constituting the electronic component package sealing member. Then, a concave portion having a bottom surface is formed on the base material by wet etching, and at least a part of the wall surface of the cavity is formed into a curved surface continuous with the bottom surface of the cavity by wet etching with the bottom surface of the concave portion being an etching target. In the forming step, a portion of the curved surface that swells most outward in the width direction of the cavity is the curved surface. Than the connection ends of the bottom surface of the cavity edge and said curved surface, and forming so as to be positioned outward in the width direction of the cavity.

  According to the present invention, the method includes the step of forming at least a part of the wall surface of the cavity into a curved surface. Therefore, in contrast to the form in which all the wall surfaces of the cavity are tapered as in the prior art described above, It is possible to increase the mounting area of the electronic component element.

  In the manufacturing method, in the forming step, a resist layer may be formed on the base material with an electrodeposition resist, and etching may be performed using the formed resist layer.

  In this case, since the resist layer made of the electrodeposition resist is formed on the base material, the resist layer can be formed up to the inner side surface and the inner bottom surface of the recess.

  According to the present invention, the mounting area of the electronic component element in the cavity can be increased.

FIG. 1 is a schematic configuration diagram showing the internal space of the crystal resonator according to the first embodiment, and an overview of the crystal resonator when the whole is cut along the A1-A1 line of the base shown in FIG. It is sectional drawing. 2 is a cross-sectional view taken along line A1-A1 shown in FIG. FIG. 3 is a schematic plan view of the base according to the first embodiment. FIG. 4 is a schematic rear view of the base according to the first embodiment. FIG. 5 is an enlarged schematic cross-sectional view of the through-hole portion of the base shown in FIG. FIG. 6 is a schematic back view of the lid according to the first embodiment. FIG. 7 is a schematic plan view of the quartz crystal resonator element according to the first embodiment. FIG. 8 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 9 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 10 is a partial schematic cross-sectional view of the wafer showing one process of manufacturing the base according to the first embodiment. FIG. 11 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 12 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 13 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing the base according to the first embodiment. FIG. 14 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 15 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 16 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 17 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 18 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 19 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 20 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the first embodiment. FIG. 21 is a schematic configuration diagram showing the internal space of the crystal resonator according to the second embodiment. The overview of the crystal resonator when the whole is cut along the A2-A2 line of the base shown in FIG. It is sectional drawing. 22 is a cross-sectional view taken along line A2-A2 shown in FIG. FIG. 23 is a schematic plan view of a base according to the second embodiment. FIG. 24 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 25 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 26 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 27 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 28 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 29 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 30 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 31 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 32 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 33 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 34 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 35 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 36 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 37 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 38 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 39 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 40 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 41 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 42 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment. FIG. 43 is a partial schematic cross-sectional view of a wafer showing one process of manufacturing a base according to the second embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiment, the present invention is applied to a package of a crystal resonator that is a piezoelectric vibration device as an electronic component package, and the present invention is applied to a tuning fork type crystal vibration piece that is a piezoelectric vibration piece as an electronic component element. The case where it is applied is shown.

<Embodiment 1>
As shown in FIG. 1, the crystal resonator 1 according to the first embodiment includes a crystal vibrating piece 2 (an electronic component element referred to in the present invention) shown in FIG. 2, and a base 4 for sealing the crystal vibrating piece 2 in an airtight manner (an electronic component package sealing member as a sealing member in the present invention) and a base 4 are disposed so as to face the base 4. And a lid 7 for hermetically sealing the excitation electrodes 31 and 32 (the electrodes shown in FIG. 7 and the electrodes of the electronic component element referred to in the present invention) of the quartz crystal vibrating piece 2 held in the chamber.

  In this crystal unit 1, the base 4 and the lid 7 are bonded by a bonding material 12 made of an alloy of Au and Sn, a first bonding layer 48 described below, and a second bonding layer 74 described below. By joining, a main body housing including the hermetically sealed internal space 11 is configured. In the internal space 11, the crystal vibrating piece 2 is ultrasonically bonded to the base 4 by an FCB method (Flip Chip Bonding) using conductive bumps 13 such as gold bumps. In the first embodiment, the conductive bump 13 is a plated bump made of a non-fluid member such as a gold bump.

  Next, each configuration of the crystal resonator 1 will be described.

  The base 4 is made of a base material made of a glass material such as borosilicate glass, which is an isotropic material. As shown in FIGS. 1 to 4, the bottom 41 and the bottom 41 along the outer periphery of one main surface 42 of the base 4. It is formed into a box-like body composed of a wall 44 extending upward from the wall. Such a base 4 is formed into a box-like body by wet-etching a base material of a single rectangular parallelepiped.

  The top surface of the wall portion 44 of the base 4 is a joint surface with the lid 7, and a first joint layer 48 for joining with the lid 7 is provided on the joint surface. The first bonding layer 48 has a laminated structure of a plurality of layers. The first sputtered film 93 is formed by sputtering on the top surface of the wall portion 44 of the base 4 by the sputtering method, and is formed on the first sputtered film 93 by sputtering. The second sputtered film 94, the first plated film 95 plated on the second sputtered film 94, the second plated film 96 plated on the first plated film 95, and the second plated A third plating film 97 formed by plating on the film 96 and a fourth plating film 98 formed by plating on the third plating film 97 are formed.

  The first sputtered film 93 is a Mo film made of Mo formed by sputtering on the top surface of the wall portion 44 of the base 4 by a sputtering method, and has a thickness of 5 to 10 nm. The second sputtered film 94 is a Cu film made of Cu formed by sputtering on the first sputtered film 93 by a sputtering method, and has a thickness of 0.3 μm. The first plating film 95 is a Cu film made of Cu plated on the second sputter film 94 and has a thickness of 2 to 6 μm. The second plating film 96 is a Ni film made of Ni plated on the first plating film 95 and has a thickness of 1 to 3 μm. The third plating film 97 is an Au strike plating film made of Au plated on the second plating film 96 or a Pd plating film made of Pd, and has a thickness of 0.1 to 0.3 μm. The fourth plating film 98 is an Au plating film made of Au plated on the third plating film 97 and has a thickness of 0.1 to 0.3 μm.

  Further, a cavity 45 having a rectangular shape in plan view surrounded by a bottom portion 41 and a wall portion 44 is formed on one main surface 42 of the base 4. A pedestal 46 is etched in the cavity 45 along the entire one end 452 in the longitudinal direction. The crystal vibrating piece 2 is mounted on the pedestal portion 46.

  A wall surface 451 of the cavity 45 is an inner side surface of the wall portion 44, and the cavity 45 is formed simultaneously with the formation of the following through hole 49 when the base 4 is formed by etching by photolithography. As shown in FIGS. 1 to 3, the wall surface 451 of the cavity 45 includes a flat surface (a part of the wall surface 451) and a curved surface (a part of the wall surface 451). Specifically, the wall surface 451 includes a first wall surface 453 that is raised on the pedestal portion 46, and a wall surface of the pedestal portion 46 that is raised on the bottom surface 456 (one main surface 42) of the cavity 45. And a third wall surface 455 that rises on the bottom surface 456 (one main surface 42) of the cavity 45 and serves as a wall surface other than the first wall surface 453 and the second wall surface 454.

  The first wall surface 453 is a flat surface, and has an inclination with respect to the top surface 441 of the wall portion 44 and is tapered as shown in FIGS. The angle formed between the top surface 441 of the wall 44 and the first wall surface 453 of the cavity 45 is about 45 degrees.

  The second wall surface 454 is a curved surface and has a curved shape that bulges outward in the width direction of the cavity 45 and is formed into a convex shape, as shown in FIGS. This curved surface is made up of a collection of points radially extending from a preset reference point 457 (see FIG. 12) in the cavity 45. Thus, the second wall surface 454 is a spherical curved surface (spherical surface) centered on the reference point 457 (center point), and the spherical normal line centered on the reference point 457 (see FIG. 12) is a surface. It is arranged on B1 (the phantom plane of the two-dot chain line shown in FIGS. 2 and 12). Here, there are a plurality of preset reference points 457, and the plurality of reference points 457 are arranged on one surface B1, and a circular line (not shown in a plan view) on the surface B1. Become. Further, the surface B1 has the same surface direction as both the main surfaces 42 and 43 of the base 4, and is a surface parallel to both the main surfaces 42 and 43 of the base 4 with reference to a cross-sectional view of the base 4 shown in FIG. Become. Further, as described above, the second wall surface 454 has a curved surface centered on a plurality of reference points 457 (see FIG. 12), and a normal line centered on the reference point 457 is disposed on the surface B1, so The diameter along the surface B1 is the maximum width dimension, the main surface 461 of the pedestal portion 46 is on the surface B1, and the angle between the main surface 461 of the pedestal portion 46 and the second wall surface 454 is a right angle.

  The third wall surface 455 includes a flat surface 4551 and a curved surface 4552. The curved surface 4552 is formed continuously with the bottom surface 456 (one main surface 42) of the cavity 45, and the flat surface 4551 is formed continuously with the curved surface 4552. The top surface 441 of the wall 44 is formed continuously with the flat surface 4551. As shown in FIGS. 1 and 2, the flat surface 4551 of the third wall surface 455 has an inclination with respect to the top surface 441 of the wall portion 44 and is formed in a tapered shape. The angle formed between the top surface 441 of the wall portion 44 and the flat surface 4551 of the third wall surface 455 is about 45 degrees. The curved surface 4552 of the third wall surface 455 has a curved shape that bulges outward in the width direction of the cavity 45 and is formed into a convex shape, as shown in FIGS. The curved surface 4552 is composed of an aggregate of points radially extending from a preset reference point 457 (see FIG. 12) in the cavity 45. Thus, the curved surface 4552 is a spherical curved surface (spherical surface) centered on the reference point 457 (center point), and the normal line of the spherical surface centered on the reference point 457 (see FIG. 12) is the surface B1 ( 2 and 12 (imaginary plane of a two-dot chain line). Here, there are a plurality of preset reference points 457, and the plurality of reference points 457 are arranged on one surface B1, and a circular line (not shown in a plan view) on the surface B1. Become. Further, the surface B1 has the same surface direction as both the main surfaces 42 and 43 of the base 4, and is a surface parallel to both the main surfaces 42 and 43 of the base 4 with reference to a cross-sectional view of the base 4 shown in FIG. Become. Further, as described above, the curved surface 4552 is a curved surface centered on a plurality of reference points 457 (see FIG. 12), and the normal line centered on the reference point 457 is arranged on the surface B1, so The diameter along B1 is the maximum width dimension. Further, the third wall surface 455 is formed with a protrusion 458 protruding into the cavity 45. A protrusion edge 4581 of the protrusion 458 is an end edge of the curved surface 4552.

  Further, as shown in FIG. 3, the base 4 includes a pair of electrode pads 51 and 52 that are electromechanically bonded to the excitation electrodes 31 and 32 of the crystal vibrating piece 2, and an external component or an external device. External terminal electrodes 53 and 54 to be connected, an electrode pad 51 and an external terminal electrode 54, and a wiring pattern 55 for electrically connecting the electrode pad 52 and the external terminal electrode 53 are formed. These electrode pads 51, 52, external terminal electrodes 53, 54, and wiring pattern 55 constitute the electrode 5 of the base 4. The electrode pads 51 and 52 are formed on the surface of the pedestal portion 46. Further, as shown in FIG. 4, the two external terminal electrodes 53 and 54 are respectively formed at both ends in the longitudinal direction on the other main surface 43 of the base 4 and are arranged side by side along the longitudinal direction. Yes. Further, a notch 541 is formed at one corner (one corner on the side facing the external terminal electrode 53) of the external terminal electrode 54, and this notch 541 is formed in the manufacturing process of the crystal resonator 1. It serves as a support for positioning the base and positioning when mounting the crystal unit 1 on an external component or external device.

  Similarly to the first bonding layer 48, the electrode pads 51 and 52 have a laminated structure of a plurality of layers, and a first sputtered film 93, a second sputtered film 94, and a first plated film are formed on the base 4 substrate. 95, a second plating film 96, a third plating film 97, and a fourth plating film 98 are sequentially laminated.

  The wiring pattern 55 is formed from the main surface 42 of the base 4 through the inner side surface 491 of the through hole 49 (see below) so as to electrically connect the electrode pads 51 and 52 and the external terminal electrodes 53 and 54. 4 is formed on the other main surface 43.

  In the wiring pattern 55, the first seed film 91 and the second seed film 92 are formed by the first sputter in the portion formed in the through hole 49 and its vicinity and the portion formed in the other main surface 43 of the substrate. It is formed as a lower layer film below the film 93. The first seed film 91 is a Mo film made of Mo formed by sputtering on the base 4 by a sputtering method, and has a thickness of 5 to 10 nm. The second seed film 92 is a Cu film made of Cu formed by sputtering on the first seed film 91 and has a thickness of 0.3 μm.

  Further, on one main surface 42 of the base 4, the wiring pattern 55 is formed on the second seed film 92 and the substrate on the first sputtered film 93, the second sputtered film 94, the first plated film 95, the second plated film 96, A third plating film 97 and a fourth plating film 98 are sequentially laminated.

  On the other hand, on the other main surface 43 of the base 4, a resin pattern 61 (see below) made of a photosensitive resin material is formed on the second seed film 92, the through hole 49 and the substrate. That is, the resin pattern 61 is formed on the entire surface excluding a part of the other main surface 43 (contact regions 58 and 59) of the base 4. As shown in FIG. 1, a wiring pattern 55 (second seed film 92) is formed on a part (contact regions 58 and 59) of the other main surface 43 where the resin pattern 61 is not formed. Then, the first sputtered film 93, the second sputtered film 94, the first plated film 95, and the second plated film are formed on the resin pattern 61 on the other main surface 43 of the base 4 and the second seed film 92 on the contact regions 58 and 59. 96, the third plating film 97, and the fourth plating film 98 are sequentially laminated to form the external terminal electrodes 53 and 54.

  1-4, the excitation electrodes 31 and 32 of the crystal vibrating piece 2 are led out from the cavity 45 to the outside of the cavity 45 by the wiring pattern 55 through the electrode pads 51 and 52 as shown in FIGS. For this purpose, a through hole 49 is formed.

  The through hole 49 is formed simultaneously with the formation of the cavity 45 when the base 4 is etched by photolithography and is formed. As shown in FIGS. 1 to 5, the two through holes 49 are formed on both main surfaces of the base 4. (One main surface 42 and the other main surface 43) are formed to penetrate. As shown in FIG. 5, the inner side surface 491 of the through hole 49 is composed of a flat surface 494 (a part of the inner side surface 491) and a curved surface 495 (a part of the inner side surface 491). A curved surface 495 is formed continuously with one principal surface 42, a flat surface 494 is formed continuously with the other principal surface 43 of the base 4 (base material), and a curved surface 495 is formed continuously with the flat surface 494. Yes. In the first embodiment, the through hole 49 has an aspect ratio (length to width ratio) of 1.3 (length: 145 μm, width: 110 μm).

  As shown in FIG. 5, the flat surface 494 has an inclination with respect to the one main surface 42 and the other main surface 43 of the base 4 and is formed in a tapered shape. The angle formed by one main surface 42 of the base 4 and the flat surface 494 of the inner surface 491 of the through hole 49 is about 45 degrees. In the first embodiment, the angle θ formed by one main surface 42 of the base 4 and the inner side surface 491 of the through hole 49 is about 45 degrees, but is not limited thereto. For example, the angle θ formed by one main surface 42 of the base 4 and the inner side surface 491 of the through hole 49 is larger than 45 degrees, and may be 70 degrees to 90 degrees as a specific example.

  Further, as shown in FIG. 5, the curved surface 495 has a curved shape that bulges outward in the width direction of the through hole 49 and is formed into a convex shape. The curved surface 495 is made up of a collection of points radially extending from a preset reference point 499 (see FIG. 12) in the through hole 49. The curved surface 495 is a spherical curved surface (spherical surface) centered on the reference point 499 (center point), and the normal line of the spherical surface centered on the reference point 499 (see FIG. 12) is the surface B2 (shown in FIG. 5). It is arranged on the phantom plane of the two-dot chain line. Here, there are a plurality of preset reference points 499, and the plurality of reference points 499 are arranged on one surface B2, and a circular line (not shown in the plan view) on the surface B2. Become. Further, the surface B2 has the same surface direction as both the main surfaces 42 and 43 of the base 4, and refers to a cross-sectional view of the base 4 shown in FIG. Become. Further, the surface B2 is positioned closer to the one main surface 42 than the other main surface 43 of the base 4.

  Further, as described above, the curved surface 495 is a curved surface centered on a plurality of reference points 499 (see FIG. 12), and therefore a normal line centered on the reference point 499 is arranged on the surface B2. Therefore, in the through hole 49, the diameter along the surface B2 is the maximum width dimension.

  In addition, two protrusions 498 that protrude into the hole are formed on the inner surface 491 of the through hole 49. A protrusion edge 4981 of the protrusion 498 is an edge of the curved surface 495. The two protrusions 498 according to the first embodiment are each formed in a ring shape (see the through hole 49 in plan view shown in FIGS. 3 and 4). In addition, an inner side surface 491 of the through hole 49 between the two protrusions 498 is formed by a curved surface 495. In the first embodiment, the two protrusions 498 are formed. However, the present invention is not limited to this, and a plurality of protrusions may be used.

  As shown in FIG. 5, the through hole 49 has a diameter of the other end opening end 493 of the through hole 49 on the other main surface 43 side of the base 4 and a through hole 49 on the one main surface 42 side of the base 4. The diameter of the one end opening end 492 is the same or substantially the same. In the first embodiment, the opening size ratio of both opening ends (one end opening end 492 and the other end opening end 493) of the through hole 49 is 0.9 (one end opening end 492: φ100 μm, the other end opening end 493: φ110 μm). It is.

  A first seed film 91 and a second seed film 92 that are part of the wiring pattern 55 are formed on the inner side surface 491 of the through hole 49. Further, the inside of the through hole 49 is filled with a resin material (reference numeral 61 for convenience) of the same material as the resin pattern 61. The through hole 49 is blocked by the resin material 61. In the resin material 61, as shown in FIG. 5, one end surface on the one main surface 42 side of the base 4 is flush with the surface of the one main surface 42 of the base 4 and the other main surface 43 side. The end surface is formed so as to be recessed toward the one main surface 42.

  Further, since the inner surface 491 of the through hole 61 includes the curved surface 495, the resin material 61 inside the through hole 49 is filled along the curved surface 495, so that the resin material enters and an anchor effect occurs. By exhibiting the anchor effect in this way, adhesion between the resin material 61 and the inner side surface 491 of the through hole 49 is ensured. As described above, the configuration in which the resin material 61 is not easily inserted into the through hole 49 provides an anchor effect, and improves the adhesion strength of the resin pattern 61 to the through hole 49.

  As described above, the external terminal electrodes 53, 54, the wiring pattern 55, and the resin pattern 61 are formed on the other main surface 43 of the base material constituting the base 4, and the base material and the wiring pattern 55 of the other main surface 43 are formed. A resin pattern 61 is laminated thereon, and external terminal electrodes 53 and 54 are laminated on the wiring pattern 55 and the resin pattern 61. The other main surface 43 is provided with one contact area 58 and 59 for bringing the external electron electrodes 53 and 54 into contact with the wiring pattern 55, as shown in FIG. The external terminal electrodes 53 and 54 and the wiring pattern 55 are contacted (laminated). That is, the external electron electrodes 53 and 54 and the wiring pattern 55 are electrically connected in the contact regions 58 and 59. As shown in FIG. 4, in the first embodiment, one contact region 58 and 59 is provided in the resin pattern formation region 47, but the number of contact regions 58 and 59 is limited to this. Instead, any number of contact regions 58 and 59 may be provided in the resin pattern formation region 47 (under the lamination of the external terminal electrodes 53 and 54).

  Further, polybenzoxazole (PBO) is used for the resin material 61 and the resin pattern 61. The resin material 61 and the resin pattern 61 are not limited to polybenzoxazole (PBO), and any resin material having good adhesion to the material (for example, glass material) constituting the base 4 may be used. it can. Therefore, for example, a resin material made of benzocyclobutene (BCB), epoxy, polyimide, or fluorine-based resin may be used as the resin material constituting the resin pattern 61. In addition, the resin material constituting the resin pattern 61 used in the first embodiment, that is, polybenzoxazole (PBO) is a resin material having photosensitivity, and is a resin material that can be patterned by a photolithography method. is there. Here, the resin material having photosensitivity as used in the present invention has a broad concept including a photosensitive resin composition containing a photosensitizer and a resin in addition to a resin material made of a resin having photosensitivity.

  The lid 7 is made of a glass material such as borosilicate glass, and as shown in FIGS. 1 and 6, the top portion 71 and a wall portion extending downward from the top portion 71 along the outer periphery of one main surface 72 of the lid 7. 73. Such a lid 7 is formed by wet etching a base material of a rectangular parallelepiped.

  Both side surfaces (inner side surface 731 and outer side surface 732) of the wall portion 73 of the lid 7 are formed in a tapered shape. The wall portion 73 is formed with a second bonding layer 74 for bonding to the base 4.

  As shown in FIG. 1, the second bonding layer 74 of the lid 7 is formed from the top surface 733 to the outer surface 732 of the wall portion 73 of the lid 7. The second bonding layer 74 has a laminated structure in which a Ti film (not shown) made of Ti is formed, and an Au film (not shown) made of Au is formed on the Ti film. The Au film is formed by sputtering using a sputtering method. In the first embodiment, the second bonding layer 74 is composed of the Ti film and the Au film, but a Cu film made of Cu may be used instead of the Au film.

  The bonding material 12 for bonding the base 4 and the lid 7 is laminated on the second bonding layer 74 of the lid 7. In this bonding material 12, an Au / Sn film (not shown) made of an alloy of Au and Sn is formed on the second bonding layer 74 of the lid 7 by plating, and an Au film (not shown) is formed on the Au / Sn film. (Omitted) consists of a plurality of laminated structures plated. The Au film has a laminated structure of a plurality of layers in which an Au strike plating film is formed by plating and an Au plating film is formed by plating on the Au strike plating film. In such a bonding material 12, the Au / Sn film is melted by heating to become an AuSn alloy film. The bonding material 12 may be configured by plating an AuSn alloy film on the second bonding layer 74 of the lid 7. Further, in the first embodiment, the bonding material 12 is stacked on the second bonding layer 74 of the lid 7, but may be stacked on the first bonding layer 48 of the base 4.

  The quartz crystal vibrating piece 2 is a quartz crystal Z plate formed by wet etching from a quartz base plate (not shown) that is a quartz crystal piece of anisotropic material.

  As shown in FIG. 7, the crystal vibrating piece 2 includes two leg portions 21 and 22 that are vibration portions, a base portion 23, and a joint portion 24 that is joined to the electrode pads 51 and 52 of the base 4. The piezoelectric vibration element plate 20 includes two leg portions 21 and 22 projecting from one end surface 231 of the base portion 23 and a joint portion 24 projecting from the other end surface 232 of the base portion 23.

  As shown in FIG. 7, the base 23 has a symmetrical shape in plan view. Further, the side surface 233 of the base portion 23 has the same width as the one end surface 231 at the one end surface 231 side, and the width at the other end surface 232 side gradually decreases from the one end surface 231 side to the other end surface 232 side. It is formed as follows.

  As shown in FIG. 7, the two leg portions 21 and 22 are provided so as to protrude from the one end surface 231 of the base portion 23 in the same direction. The tip portions 211 and 221 of the two leg portions 21 and 22 are formed wider than the other portions of the leg portions 21 and 22 (wide in the direction orthogonal to the protruding direction), and further, The tip corner is curved. Further, groove portions 25 are formed on both main surfaces of the two leg portions 21 and 22 in order to improve the CI value.

  As shown in FIG. 7, the joint portion 24 is provided so as to protrude from the central portion in the width direction of the other end surface 232 of the base portion 23. The joint portion 24 includes a short side portion 241 that protrudes in a direction perpendicular to the other end surface 232 of the base portion 23 in a plan view, and a long side portion 242 that extends in the width direction of the base portion 23 and continues to the tip portion of the short side portion 241. The distal end portion 243 of the long side portion 242 faces the width direction of the base portion 23. That is, the joint portion 24 is formed in an L shape in plan view that is bent at a right angle in plan view. In addition, the bonding portion 24 is provided with two bonding portions 27 bonded to the electrode pads 51 and 52 of the base 4 via the conductive bumps 13.

  In the quartz crystal resonator element 2 having the above-described configuration, the first and second excitation electrodes 31 and 32 configured at different potentials, and the first and second excitation electrodes 31 and 32 are connected to the electrode pad 51 of the base 4. , 52 are formed with lead electrodes 33, 34 drawn from the first and second excitation electrodes 31, 32.

  Part of the first and second excitation electrodes 31 and 32 is formed inside the groove 25 of the legs 21 and 22. For this reason, even if the crystal vibrating piece 2 is downsized, the vibration loss of the legs 21 and 22 is suppressed, and the CI value can be suppressed low.

  The first excitation electrode 31 is formed on both main surfaces of one leg portion 21, both side surfaces of the other leg portion 22, and both main surfaces of the tip end portion 221. Similarly, the second excitation electrode 32 is formed on both main surfaces of the other leg portion 22, both side surfaces of the one leg portion 21, and both main surfaces of the tip end portion 211.

  The extraction electrodes 33 and 34 are formed on the base portion 23 and the joint portion 24, and the first excitation electrodes formed on both main surfaces of the one leg portion 21 by the extraction electrode 33 formed on the base portion 23. 31 is connected to the first excitation electrodes 31 formed on both side surfaces of the other leg portion 22 and both main surfaces of the tip portion 221, and the extraction electrode 34 formed on the base portion 23 causes the other leg portion 22 to The second excitation electrodes 32 formed on both main surfaces are connected to the second excitation electrodes 32 formed on both side surfaces of one leg portion 21 and both main surfaces of the tip portion 211.

  The base 23 is formed with two through holes 26 penetrating both main surfaces of the piezoelectric vibration element plate 20, and the through holes 26 are filled with a conductive material. Through these through holes 26, extraction electrodes 33 and 34 are routed between both main surfaces of the base portion 23.

  In the crystal resonator 1 having the above-described configuration, as shown in FIG. 1, the joint portion 24 of the crystal vibrating piece 2 is connected to the pedestal portion 46 formed on one main surface 42 of the base 4 through the conductive bumps 13. Is electromechanically ultrasonically bonded. By this bonding, the excitation electrodes 31 and 32 of the quartz crystal vibrating piece 2 are electromechanically bonded to the electrode pads 51 and 52 of the base 4 via the extraction electrodes 33 and 34 and the conductive bumps 13, and are attached to the base 4. A crystal vibrating piece 2 is mounted. Then, the lid 7 is temporarily bonded to the base 4 on which the crystal vibrating piece 2 is mounted by the FCB method, and then heated in a vacuum atmosphere, whereby the bonding material 12, the first bonding layer 48, and the second bonding layer. 74 is melted, whereby the second bonding layer 74 of the lid 7 is bonded to the first bonding layer 48 of the base 4 via the bonding material 12, and the crystal resonator element 2 is hermetically sealed. Is manufactured. The conductive bump 13 is a plated bump made of a non-fluid member.

  Next, a method for manufacturing the crystal unit 1 and the base 4 will be described with reference to FIGS.

  In the first embodiment, a single plate wafer 8 made of a glass material for forming a large number of bases 4 is used.

  First, as shown in FIG. 8, a Mo film 910 (or Cr film) made of Cr is formed by sputtering on both main surfaces 81 and 82 of the wafer 8, and an Au film 911 made of Au is formed by sputtering on the Mo film 910. Then, a resist is applied onto the Au film 911 by a dip coating method to form a positive resist layer 912.

  After forming the positive resist layer 912, a recess 459 for forming the cavity 45 (hereinafter referred to as a recess 459 of the cavity 45) and a recess 496 for forming the flat surface 494 of the through hole 49 (hereinafter referred to as the through hole 94). The positive resist layer 912 on both main surfaces 81 and 82 of the wafer 8 is exposed and developed by photolithography to form the exposed Mo film 910 and Au film 911. Metal etching is performed to form a predetermined pattern (the cavity 45 including the pedestal portion 46 and the concave portion 496 for forming the flat surface 494 of the through hole 49) as shown in FIG.

  After the predetermined pattern shown in FIG. 9 is formed, the wafer 8 is etched by a wet etching method using a photolithographic technique, so that the concave portion 459 of the cavity 45 and the through hole 94 are formed in the wafer 8 as shown in FIG. A plurality of the bases 4 formed with the recesses 496 are formed.

  Note that the bottom surface inside the concave portion 459 of the cavity 45 shown in FIG. 10 serves as a reference surface for setting the surface B1 (virtual surface of the two-dot chain line shown in FIG. 2). Further, the inner surface of the recess 459 of the cavity 45 is a flat surface, but is not limited to this, and is tapered with respect to one main surface 81 of the wafer 8 (see one main surface 42 of the base 4). Any taper surface formed on the surface may be used. Therefore, the taper surface may include at least a curved surface that swells in the wet etching direction.

  Further, the bottom surface inside the concave portion 496 of the through hole 49 shown in FIG. 10 serves as a reference surface for setting the surface B2 (virtual surface of the two-dot chain line shown in FIG. 5). Further, the inner surface of the recess 496 of the through hole 49 is a flat surface (flat surface 494), but is not limited to this, and the other main surface 82 of the wafer 8 (the other main surface 43 of the base 4). The taper surface may be a taper surface formed in a taper shape with respect to (see). Therefore, the taper surface may include at least a curved surface that swells in the wet etching direction.

  After the recess 459 of the cavity 45 and the recess 496 of the through hole 49 are formed on the wafer 8, as shown in FIG. 11, the positive resist layer 912, the Mo film 910, and the Au film 911 are peeled off and removed. Make a board.

  In order to form the cavity 45, the through hole 49, and the outer peripheral edge of the other main surface 43 of the base 4 with respect to the wafer 8 shown in FIG. A new Au film 911 is sputtered on the Mo film 910, and a resist is applied on the Au film 911 by an electrodeposition coating method (or spray coating method) to form a new positive resist layer 912. To do. In the first embodiment, since the electrodeposition coating method (or spray coating method) is used to form a new positive resist layer 912, the inner surface 4592 (the inner surface and the inner bottom surface) of the recess 459 of the cavity 45 is used. And a new positive resist layer 912 can be formed up to the inner surface 497 (the inner surface and the inner bottom surface) of the recess 496 of the through hole 49.

  Then, after forming a new positive resist layer 912, the positive resist layers on both main surfaces 81 and 82 of the wafer 8 are formed in order to mold the cavity 45, the through hole 49, and the outer peripheral edge of the other main surface 43 of the base 4. 912 is exposed and developed by photolithography, and the exposed Mo film 910 and Au film 911 are etched to form a predetermined pattern (the cavity 45, the through hole 49, and the base 4) as shown in FIG. The outer peripheral edge of the other main surface 43 is formed.

  At this time, in the concave portion 459 of the cavity 45, the positive resist layer 912, the Mo film 910, and the Au film 911 including the central portion are peeled and removed except for the outer peripheral edge of the inner bottom surface. The exposed edge exposed from the positive resist layer 912 (including the Mo film 910 and the Au film 911) formed on the bottom surface inside the recess 459 of the cavity 45 here (see the point indicated by reference numeral 457 in FIG. 12). ) Is a line (endless circular line in plan view) constituted by the plurality of reference points 457 described above. The plurality of reference points 457 are on the plane B1 (virtual plane of the two-dot chain line shown in FIG. 12).

  Further, in the concave portion 496 of the through hole 49, the positive resist layer 912, the Mo film 910, and the Au film 911 are peeled and removed only in the central portion of the inner bottom surface. Note that the exposed edge (reference numeral 499 in FIG. 12) of the central portion exposed from the positive resist layer 912 (including the Mo film 910 and the Au film 911) formed on the bottom surface inside the recess 496 of the through hole 49 referred to here. Is a line (endless circular line in plan view) constituted by the plurality of reference points 499 described above. The plurality of reference points 499 are on the plane B2 (the phantom plane of the two-dot chain line shown in FIG. 12).

  After the predetermined pattern shown in FIG. 12 is formed, etching is performed by a wet etching method using a photolithography technique, so that the cavity 45, the through hole 49, and the other main surface 43 are formed on the wafer 8 as shown in FIG. A large number of bases 4 having peripheral edges are formed.

  After the cavity 45, the through hole 49, and the outer peripheral edge of the other main surface 43 are formed on the wafer 8, the positive resist layer 912, the Mo film 910, and the Au film 911 are peeled and removed as shown in FIG. The base 4 is formed into a molded wafer 8 base plate. The etching process of the wafer 8 so far corresponds to the forming process referred to in the present invention. At the time of filing, the use of physical etching (such as dry etching) to form the curved surface 495 in the base 4 in which the crystal unit 1 (base 4) is miniaturized is from the viewpoint of surface formation accuracy and cost. Not considered.

  Then, on the wafer 8 shown in FIG. 14, a Mo layer (first seed film 91) made of Mo is sputtered on the wafer 8 (both main surfaces 81, 82 and the inner surface 491 of the through hole 49) by sputtering. Form. After the formation of the first seed film 91, a Cu layer (second seed film 92) made of Cu is formed on the first seed film 91 by sputtering.

  After the first seed film 91 and the second seed film 92 are formed, a resist is applied on the second seed film 92 by dip coating to form a new positive resist layer 912. Thereafter, in order to form a predetermined pattern corresponding to the inner side surface 491 of the through hole 49 and the vicinity thereof and the wiring pattern of the other main surface 43 of the base 4, the positive resist layer 912 is exposed and exposed by photolithography. Development is performed, and then the first seed film 91 and the second seed film 92 are subjected to metal etching with respect to a portion exposed by exposure and development. After the metal etching of the first seed film 91 and the second seed film 92, the positive resist layer 912 is peeled and removed (see FIG. 15). The first seed film 91 and the second seed film 92 formed here constitute a part of the wiring pattern 55 of the base 4 shown in FIG.

  A resist is applied to the wafer 8 shown in FIG. 15 by dip coating to form a new positive resist layer 912 (not shown). Thereafter, the positive resist layer 912 is exposed and developed by a photolithography method in order to form a predetermined pattern of the inner side surface 491 of the through hole 49 and its vicinity and the other main surface 43 of the base 4. Thereafter, a resin layer made of Cu is formed on both the main surfaces 81 and 82 of the wafer 8 by plating. After forming the resin layer, the positive resist layer 912 is peeled off and a resin pattern 61 is formed on the through hole 49 and the other main surface 43 of the base 4 as shown in FIG.

  After the resin pattern 61 is formed, a Mo layer (first sputtered film 93) made of Mo is formed on both the main surfaces 81 and 82 of the wafer 8 by sputtering. After the formation of the first sputtered film 93, a Cu layer (second sputtered film 94) made of Cu is formed by sputtering on the first sputtered film 93 (see FIG. 17).

  After forming the first sputtered film 93 and the second sputtered film 94, a resist is applied on the second seed film 92 by a dip coating method to form a new positive resist layer 912. Thereafter, in order to form the first plating layer 95 to the fourth plating layer 98, the positive resist layer 912 having a predetermined pattern corresponding to the first plating layer 95 to the fourth plating layer 98 is exposed by photolithography. Development is performed (see FIG. 18).

  After the exposure and development of the positive resist layer 912, the first plating layer 95 is formed on both main surfaces 81 and 82 of the wafer 8, the second plating layer 96 is formed on the first plating layer 95, and the second A third plating layer 97 is formed on the plating layer 96, and a fourth plating layer 98 is formed on the third plating layer 97 (see FIG. 19).

  As shown in FIG. 19, after forming the first plating layer 95 to the fourth plating layer 98, the positive resist layer 912 and the first sputtered film 93 and the second sputtered film 94 under the positive resist layer 912 are removed. A large number of bases 4 are formed on the wafer 8 (see FIG. 20). By the first sputtered film 93, the second sputtered film 94, and the first plated layer 95 to the fourth plated layer 98 formed here, a part of the electrode pads 51 and 52 of the base 4 shown in FIG. A first bonding layer 48 is formed.

  After a large number of bases 4 are formed on the wafer 8, the large number of bases 4 are separated into a large number of bases 4, and a large number of bases 4 shown in FIG. 2 are manufactured.

  Then, the crystal vibrating piece 2 shown in FIG. 7 is arranged on the base 4 shown in FIG. 2 based on the position of the notch 541, and the crystal vibrating piece 2 is electrically connected to the base 4 via the conductive bumps 13 by the FCB method. The crystal vibrating piece 2 is mounted and held on the base 4 by mechanical ultrasonic bonding. In a separate step, the bonding material 12 is laminated on the second bonding layer 74 of the lid 7 shown in FIG. Thereafter, the lid 7 is arranged on the base 4 on which the crystal vibrating piece 2 is mounted and held, and the first bonding layer 48 of the base 4 and the second bonding layer 74 of the lid 7 are electromechanical by the FCB method through the bonding material 12. The quartz crystal resonator 1 shown in FIG. 1 is manufactured by ultrasonic bonding.

  According to the manufacturing method of the crystal unit 1, the base 4, and the base 4 according to the first embodiment, the wall surface 451 of the cavity 45 includes a curved surface (second wall surface 454, third wall surface 455). The mounting area of the quartz crystal resonator element 2 in the cavity 45 can be increased with respect to the form in which all the wall surfaces of the cavity are tapered as in the prior art. The curved surfaces (second wall surface 454, third wall surface 455) referred to here are surfaces that swell outward in the width direction of the cavity 45, and are formed from an aggregate of points radially extending from a preset reference point 457 in the cavity 45. Become. There are a plurality of reference points 457, and the plurality of reference points are arranged on one plane B1.

  Further, according to the crystal resonator 1 and the manufacturing method of the base 4 and the base 4 according to the first embodiment, the inner surface 491 of the through hole 49 includes the curved surface 495. The through hole 49 can be formed even if the width of both open ends (one end open end 492, the other end open end 493) of the through hole 49 is narrowed with respect to the through hole having a tapered side surface. As a result, the opening end (one end opening end 492, the other end opening end 493) of the through hole 49 is made small, and the opening end (one end opening end 492, the other end opening end) of the main surface 42, 43 of the base 4 is reduced. The area occupied by 493) can be reduced. Further, according to the first embodiment, the anchor effect can be generated for the member filling the through hole 49. In particular, the anchor effect by the curved surface is more effective than the anchor effect by the flat surface.

  In addition, since two protrusions 498 are formed on the inner surface 491 of the through hole 49 and the protrusion edge 4981 of the protrusion 498 is an edge of the curved surface 495, the protrusion edge 4981 and the curved surface 495 provide the through hole 49 with the protrusion edge 4981. An anchor effect can be efficiently generated for the member to be filled.

  In addition, since the curved surface 495 is formed between the two protrusions 498, the two protrusions 498 and the curved surface 495 with respect to the orthogonal direction (both directions) orthogonal to both the main surfaces 42 and 43 of the base 4 (base material). An anchor effect can be produced.

  In addition, a curved surface 495 of the through hole 49 is formed continuously with one main surface 42 of the base 4 (base material), and a tapered flat shape of the through hole 49 is continuous with the other main surface 43 of the base 4 (base material). Since the surface 494 is formed and the curved surface 495 is formed continuously with the flat surface 494, the opening end (one end opening end 492, the other end opening end 493) of the main surface 42, 43 of the base 4 occupies. Not only can the area be reduced, but also the member filling the through hole 49 by the curved surface 495 can be prevented from coming out of the one principal surface 42 of the base 4 (base material). Further, since the flat surface 494 is formed continuously with the other main surface 43 of the base 4 (base material), the filling material (the resin material 61 in the first embodiment) is filled from the flat surface 494 into the through hole 49. By doing so, the filling of the filling material into the through hole 49 can be facilitated.

  In the crystal resonator 1 according to the first embodiment, the resin material 61 is configured by a Cu plating layer formed by plating on the first seed film 91 and the second seed film 92 on the inner surface of the through hole 49. However, the resin material 61 is not limited to this as long as it is configured by filling the through hole 49 with a conductive material. That is, the resin material 61 may be configured by filling the through hole 49 with a metal paste (a paste-like resin material to which a conductive filler is added).

  Further, in the base 4 of the crystal unit 1 according to the first embodiment, the first seed film 91 is made of a Mo film. However, the first seed film 91 is not limited to this, and is made of Ti instead of the Mo film. A Ti film may be used.

  Moreover, in this Embodiment 1, although glass is used as a material of the base 4 and the lid | cover 7, both the base 4 and the lid | cover 7 are not limited to what was comprised using glass, Any isotropic material may be used.

  In the first embodiment, AuSn is mainly used as the bonding material 12. However, the bonding material 12 is not particularly limited as long as the base 4 and the lid 7 can be bonded. Further, it may be configured using a Sn alloy brazing material such as CuSn.

  In the crystal resonator 1 according to the first embodiment described above, the tuning-fork type crystal vibrating piece 2 shown in FIG. 7 is used as the crystal vibrating piece. However, an AT-cut crystal vibrating piece may be used.

  In addition to the crystal vibrating piece 2, an IC chip may be mounted on the base 4 according to the first embodiment to constitute an oscillator. When an IC chip is mounted on the base 4, electrodes corresponding to the electrode configuration of the IC chip are formed on the base 4.

  In the first embodiment, the two-terminal crystal resonator 1 is used. However, the present invention is not limited to this and can be applied to a four-terminal crystal resonator 1.

  In the first embodiment, the angle θ between the top surface 441 of the wall portion 44 and the first wall surface 453 or the third wall surface 455 is about 45 degrees, but is not limited to this. For example, the angle θ formed by the top surface 441 of the wall 44 and the first wall surface 453 or the third wall surface 455 may be larger than 45 degrees, and may be 70 degrees to 90 degrees as a specific example.

  In the first embodiment, the first wall surface 453 raised and formed on the pedestal portion 46 is a flat surface formed in a tapered shape, but is not limited to this, and a curved surface is formed. You may have. Therefore, a mode in which the first wall surface 453 includes a curved surface will be described as a second embodiment with reference to the drawings.

<Embodiment 2>
Next, the crystal resonator 1 according to the second embodiment will be described with reference to the drawings. The crystal resonator 1 according to the second embodiment is different from the first embodiment in the shape of the cavity 45 of the base 4. Therefore, the operation effect and modification by the same configuration have the same operation effect and modification as in the first embodiment. Therefore, in the second embodiment, a configuration (cavity 45 of the base 4) different from the first embodiment will be described, and the description of the same configuration will be omitted.

  As shown in FIG. 21, the crystal resonator 1 according to the second embodiment is provided with a crystal resonator element 2 shown in FIG. 7, a base 4 shown in FIG. 22, and a lid 7 shown in FIG. Yes.

  Hereinafter, the cavity 45 of the base 4 having a configuration different from that of the first embodiment will be described with reference to FIGS.

  On one main surface 42 of the base 4, a cavity 45 having a rectangular shape in plan view surrounded by a bottom 41 and a wall 44 is formed. A pedestal 46 is etched in the cavity 45 along the entire one end 452 in the longitudinal direction.

  A wall surface 451 of the cavity 45 is an inner side surface of the wall portion 44, and the cavity 45 is formed simultaneously with the formation of the following through hole 49 when the base 4 is formed by etching by photolithography. As shown in FIGS. 21 to 23, the wall surface 451 of the cavity 45 includes a flat surface (a part of the wall surface 451) and a curved surface (a part of the wall surface 451). Specifically, the wall surface 451 includes a first wall surface 453 that is raised on the pedestal portion 46, and a wall surface of the pedestal portion 46 that is raised on the bottom surface 456 (one main surface 42) of the cavity 45. And a third wall surface 455 that rises on the bottom surface 456 (one main surface 42) of the cavity 45 and serves as a wall surface other than the first wall surface 453 and the second wall surface 454.

  The first wall surface 453 includes a flat surface 4531 and a curved surface 4532, a curved surface 4532 is formed continuously with the main surface 461 of the pedestal portion 46, a flat surface 4531 is formed continuously with the curved surface 4532, and the flat surface 4531. A top surface 441 of the wall portion 44 is formed continuously. As shown in FIGS. 21 to 23, the flat surface 4531 of the first wall surface 453 has an inclination with respect to the top surface 441 of the wall portion 44 and is formed in a tapered shape. The angle formed between the top surface 441 of the wall 44 and the flat surface 4531 of the first wall surface 453 is about 45 degrees. Further, as shown in FIGS. 21 and 22, the curved surface 4532 of the first wall surface 453 has a curved shape that bulges outward in the width direction of the cavity 45 and is formed into a convex shape. The curved surface 4532 is composed of a set of points radially extending from a preset reference point 4571 (see FIG. 29) in the cavity 45. In this way, the curved surface 4532 is a spherical curved surface (spherical surface) centered on the reference point 4571 (center point), and the normal line of the spherical surface centered on the reference point 4571 (see FIG. 29) is the surface B3 ( It is arranged on the phantom plane of the two-dot chain line shown in FIGS. Here, there are a plurality of preset reference points 4571, and the plurality of reference points 4571 are arranged on one surface B3, and on the surface B3, a circular line not shown (an endless circular line in plan view) and Become. Further, the surface B3 has the same surface direction as the main surfaces 42 and 43 of the base 4, and is a surface parallel to the main surfaces 42 and 43 of the base 4 with reference to a cross-sectional view of the base 4 shown in FIG. Become. Further, as described above, the curved surface 4532 is a curved surface centered on a plurality of reference points 4571 (see FIG. 29), and a normal line centered on the reference point 4571 is arranged on the surface B3. The diameter along B3 is the maximum width dimension. In addition, the first wall surface 453 is formed with a protrusion 458 protruding into the cavity 45. A protrusion edge 4581 of the protrusion 458 is an edge of the curved surface 4532.

  The second wall surface 454 is a curved surface and has a curved shape that bulges outward in the width direction of the cavity 45 and is formed into a convex shape, as shown in FIGS. This curved surface is made up of an aggregate of points radially extending from a preset reference point 4572 (see FIG. 35) in the cavity 45. Thus, the second wall surface 454 is a spherical curved surface (spherical surface) centered on the reference point 4572 (center point), and the spherical normal line centered on the reference point 4572 (see FIG. 35) is a surface. It is arranged on B4 (the phantom plane of the two-dot chain line shown in FIGS. 22 and 35). Here, there are a plurality of preset reference points 4572, and the plurality of reference points 4572 are arranged on one surface B4, and a circular line (not shown in the plan view) on the surface B4. Become. Further, the surface B4 has the same surface direction as the main surfaces 42 and 43 of the base 4, and is a surface parallel to the main surfaces 42 and 43 of the base 4 with reference to a cross-sectional view of the base 4 shown in FIG. Become. Further, as described above, the second wall surface 454 has a curved surface centered on a plurality of reference points 4572 (see FIG. 35), and a normal line centered on the reference point 4572 is arranged on the surface B4. The diameter along the surface B4 is the maximum width dimension, the main surface 461 of the pedestal portion 46 is on the surface B4, and the angle between the main surface 461 of the pedestal portion 46 and the second wall surface 454 is a right angle.

  The third wall surface 455 is composed of a flat surface 4551 and a curved surface 4552. The curved surface 4552 includes a first curved surface 4553 and a second curved surface 4554. Regarding the third wall surface 455, a second curved surface 4554 is formed continuously with the bottom surface 456 (one main surface 42) of the cavity 45, a first curved surface 4553 is formed continuously with the second curved surface 4554, and the first curved surface 4553 is formed. A flat surface 4551 is formed continuously, and a top surface 441 of the wall portion 44 is formed continuously with the flat surface 4551.

  As shown in FIGS. 1 and 2, the flat surface 4551 of the third wall surface 455 has an inclination with respect to the top surface 441 of the wall portion 44 and is formed in a tapered shape. The angle formed between the top surface 441 of the wall portion 44 and the flat surface 4551 of the third wall surface 455 is about 45 degrees.

  As shown in FIGS. 21 and 22, the first curved surface 4553 of the third wall surface 455 has a curved shape that bulges outward in the width direction of the cavity 45 and is formed into a convex shape. The first curved surface 4553 is composed of a set of points radially expanding from a preset reference point 4571 (see FIG. 29) in the cavity 45. Thus, the first curved surface 4553 is a spherical curved surface (spherical surface) centered on the reference point 4571 (center point), and the spherical normal line centered on the reference point 4571 (see FIG. 29) is a surface. It is arranged on B3 (the phantom plane of the two-dot chain line shown in FIGS. 22 and 29). Here, there are a plurality of preset reference points 4571, and the plurality of reference points 4571 are arranged on one surface B3, and on the surface B3, a circular line not shown (an endless circular line in plan view) and Become. Further, the surface B3 has the same surface direction as the main surfaces 42 and 43 of the base 4, and is a surface parallel to the main surfaces 42 and 43 of the base 4 with reference to a cross-sectional view of the base 4 shown in FIG. Become. Further, as described above, the first curved surface 4553 is a curved surface centered on a plurality of reference points 4571 (see FIG. 29), and a normal line centered on the reference point 4571 is arranged on the surface B3. The diameter along the surface B3 is the maximum width dimension.

  As shown in FIGS. 21 and 22, the second curved surface 4554 of the third wall surface 455 has a curved shape that bulges outward in the width direction of the cavity 45 and is formed into a convex shape. The second curved surface 4554 is composed of a collection of points radially extending from a preset reference point 4572 (see FIG. 35) in the cavity 45. Thus, the second curved surface 4554 is a spherical curved surface (spherical surface) centered on the reference point 4572 (center point), and the spherical normal line centered on the reference point 4572 (see FIG. 35) is a surface. It is arranged on B4 (the phantom plane of the two-dot chain line shown in FIGS. 22 and 35). Here, there are a plurality of preset reference points 4572, and the plurality of reference points 4572 are arranged on one surface B4, and a circular line (not shown in the plan view) on the surface B4. Become. Further, the surface B4 has the same surface direction as the main surfaces 42 and 43 of the base 4, and is a surface parallel to the main surfaces 42 and 43 of the base 4 with reference to a cross-sectional view of the base 4 shown in FIG. Become. Further, as described above, the second curved surface 4554 is a curved surface centered on a plurality of reference points 4572 (see FIG. 35), and the normal line centered on the reference point 4572 is arranged on the surface B4. The diameter along the surface B4 is the maximum width dimension.

  The third wall surface 455 is formed with two protrusions 458 protruding into the cavity 45. Projection edges 4581 of the two projections 458 are edges of the first curved surface 4553 and the second curved surface 4554.

  Next, a method for manufacturing the base 4 will be described with reference to FIGS.

  In the second embodiment, a single plate wafer 8 made of a glass material for forming a large number of bases 4 is used.

  First, as shown in FIG. 24, a Mo film 910 (or Cr film) made of Cr is formed on both main surfaces 81 and 82 of the wafer 8 by sputtering, and an Au film 911 made of Au is formed on the Mo film 910 by sputtering. Then, a resist is applied onto the Au film 911 by a dip coating method to form a positive resist layer 912.

  After the positive resist layer 912 is formed, a photo resist is applied to the positive resist layer 912 on the one principal surface 81 of the wafer 8 in order to form a recess 459 for forming the cavity 45 (hereinafter referred to as a recess 459 of the cavity 45). Exposure and development are performed by a lithography method, and the exposed Mo film 910 and Au film 911 are metal etched to form a predetermined pattern (a recess 459 of the cavity 45) as shown in FIG.

  After the predetermined pattern shown in FIG. 25 is formed, the wafer 8 is etched by a wet etching method using a photolithography technique, and the base 4 in which the concave portion 459 of the cavity 45 is formed in the wafer 8 as shown in FIG. And a number of them.

  Note that the bottom surface inside the recess 459 of the cavity 45 shown in FIG. 26 serves as a reference surface for setting the surface B3 (the phantom surface of the two-dot chain line shown in FIG. 22). Further, the inner surface of the recess 459 of the cavity 45 is a flat surface, but is not limited to this, and is tapered with respect to one main surface 81 of the wafer 8 (see one main surface 42 of the base 4). Any taper surface formed on the surface may be used. Therefore, the taper surface may include at least a curved surface that swells in the wet etching direction.

  After the concave portion 459 of the cavity 45 is formed on the wafer 8, as shown in FIG. 27, the positive resist layer 912, the Mo film 910, and the Au film 911 are peeled and removed to form a wafer 8 base plate.

  27, a Mo film 910 made of Cr is formed by sputtering on both main surfaces 81 and 82 of the wafer 8 as shown in FIG. 28, and an Au film 911 made of Au is formed on the Mo film 910. Then, a resist is applied onto the Au film 911 by an electrodeposition coating method (or spray coating method) to form a new positive resist layer 912. In the second embodiment, since the electrodeposition coating method (or spray coating method) is used to form a new positive resist layer 912, the inner surface 4592 (the inner surface and the inner bottom surface) of the recess 459 of the cavity 45 is used. A new positive resist layer 912 can be formed.

  After the positive resist layer 912 is formed, the positive resist layer 912 on one main surface 81 of the wafer 8 is exposed and developed by a photolithography method to form the cavity 45 (the pedestal portion 46). The film 910 and the Au film 911 are metal etched to form a predetermined pattern (the cavity 45 including the pedestal 46) as shown in FIG.

  An exposed edge (see a point indicated by reference numeral 4571 in FIG. 29) exposed from the positive resist layer 912 (including the Mo film 910 and the Au film 911) formed on the bottom surface inside the recess 459 of the cavity 45 here. , A line composed of the plurality of reference points 4571 (an endless circular line in plan view). Note that the plurality of reference points 4571 are on the plane B3 (virtual plane of the two-dot chain line shown in FIG. 22).

  After the predetermined pattern shown in FIG. 29 is formed, the wafer 8 is etched by a wet etching method using a photolithography technique, so that the pedestal 46 (main surface 461) and the first surface are formed on the wafer 8 as shown in FIG. A plurality of bases 4 formed with one wall surface 453 (flat surface 4531, curved surface 4532), flat surface 4551 of the third wall surface 455, and first curved surface 4553 are formed.

  After the pedestal 46 (main surface 461), the first wall surface 453, the flat surface 4551 of the third wall surface 455, and the first curved surface 4553 are formed on the wafer 8, as shown in FIG. 31, the positive resist layer 912 and the Mo The film 910 and the Au film 911 are peeled and removed to form a wafer 8 base plate.

  31, a Mo film 910 made of Cr is formed by sputtering on both main surfaces 81 and 82 of the wafer 8 as shown in FIG. 32, and an Au film 911 made of Au is formed on the Mo film 910. Then, a resist is applied onto the Au film 911 by an electrodeposition coating method (or spray coating method) to form a new positive resist layer 912. In the second embodiment, since the electrodeposition coating method (or spray coating method) is used to form a new positive resist layer 912, the new positive resist layer 912 is formed even in the concave portion 459 of the cavity 45. can do.

  After the positive resist layer 912 is formed, both main portions of the wafer 8 are formed in order to form the cavity 45 and the recess 496 for forming the flat surface 494 of the through hole 49 (hereinafter referred to as the recess 496 of the through hole 94). The positive resist layer 912 on the surfaces 81 and 82 is exposed and developed by photolithography, and the exposed Mo film 910 and Au film 911 are subjected to metal etching to form a predetermined pattern (cavity as shown in FIG. 45 recesses 459 and recesses 496 of the through holes 49 are formed.

  After the predetermined pattern shown in FIG. 33 is formed, the wafer 8 is etched by a wet etching method using a photolithography technique, so that the concave portion 459 of the cavity 45 and the concave portion 496 of the through hole 94 are formed in the wafer 8. A large number of bases 4 (see FIG. 34) are formed.

  Note that the bottom surface (see FIG. 34) inside the concave portion 459 of the cavity 45 serves as a reference surface for setting the surface B4 (the phantom surface of the two-dot chain line shown in FIG. 22). Further, the inner surface of the recess 459 of the cavity 45 is a flat surface, but is not limited to this, and is tapered with respect to one main surface 81 of the wafer 8 (see one main surface 42 of the base 4). Any taper surface formed on the surface may be used. Therefore, the taper surface may include at least a curved surface that swells in the wet etching direction.

  In addition, the bottom surface (see FIG. 34) inside the recess 496 of the through hole 49 serves as a reference surface for setting the surface B2 (virtual surface of the two-dot chain line shown in FIG. 22). Further, the inner surface of the recess 496 of the through hole 49 is a flat surface (flat surface 494), but is not limited to this, and the other main surface 82 of the wafer 8 (the other main surface 43 of the base 4). The taper surface may be a taper surface formed in a taper shape with respect to (see). Therefore, the taper surface may include at least a curved surface that swells in the wet etching direction.

  After the concave portion 459 of the cavity 45 and the concave portion 496 of the through hole 49 are formed on the wafer 8, the positive resist layer 912, the Mo film 910, and the Au film 911 are peeled and removed as shown in FIG. Make a base plate.

  In order to form the cavity 45, the through hole 49, and the outer peripheral edge of the other main surface 43 of the base 4 with respect to the wafer 8 shown in FIG. A new Au film 911 is sputtered on the Mo film 910, and a resist is applied on the Au film 911 by an electrodeposition coating method (or spray coating method) to form a new positive resist layer 912. To do. In the second embodiment, since the electrodeposition coating method (or spray coating method) is used to form a new positive resist layer 912, the inner surface 4592 (the inner surface and the inner bottom surface) of the recess 459 of the cavity 45 is used. And a new positive resist layer 912 can be formed up to the inner surface 497 (the inner surface and the inner bottom surface) of the recess 496 of the through hole 49.

  Then, after forming a new positive resist layer 912, the positive resist layers on both main surfaces 81 and 82 of the wafer 8 are formed in order to mold the cavity 45, the through hole 49, and the outer peripheral edge of the other main surface 43 of the base 4. 912 is exposed and developed by a photolithography method, and the exposed Mo film 910 and Au film 911 are etched to form a predetermined pattern (the cavity 45, the through hole 49, and the base 4) as shown in FIG. The outer peripheral edge of the other main surface 43 is formed. At this time, in the concave portion 459 of the cavity 45, the positive resist layer 912, the Mo film 910, and the Au film 911 including the central portion are peeled and removed except for the outer peripheral edge of the inner bottom surface. Further, in the concave portion 496 of the through hole 49, the positive resist layer 912, the Mo film 910, and the Au film 911 are peeled and removed only in the central portion of the inner bottom surface.

  An exposed edge (see the point indicated by reference numeral 4572 in FIG. 35) exposed from the positive resist layer 912 (including the Mo film 910 and the Au film 911) formed on the bottom surface inside the recess 459 of the cavity 45 here. , A line composed of the plurality of reference points 4572 (an endless circular line in plan view). Note that the plurality of reference points 4572 are on the plane B4 (virtual plane of the two-dot chain line shown in FIG. 22).

  Further, the exposed edge (point indicated by reference numeral 499 in FIG. 35) of the central portion exposed from the positive resist layer 912 (including the Mo film 910 and the Au film 911) formed on the bottom surface inside the concave portion 496 of the through hole 49. Reference) is a line composed of the plurality of reference points 499 (an endless circular line in plan view). Note that the plurality of reference points 499 are on the plane B2 (virtual plane of a two-dot chain line shown in FIG. 22).

  After the predetermined pattern shown in FIG. 35 is formed, etching is performed by a wet etching method using a photolithography technique, so that the cavity 45, the through hole 49, and the other main surface 43 are formed on the wafer 8 as shown in FIG. A large number of bases 4 having peripheral edges are formed.

  After the cavity 45, the through hole 49, and the outer peripheral edge of the other main surface 43 are formed on the wafer 8, the positive resist layer 912, the Mo film 910, and the Au film 911 are peeled and removed as shown in FIG. The base 4 is formed into a molded wafer 8 base plate. The etching process of the wafer 8 so far corresponds to the forming process referred to in the present invention. At the time of filing, physical etching (such as dry etching) is used to form a curved surface (the curved surface of the cavity 45 or the through hole 49) in the base 4 in which the crystal unit 1 (base 4) is downsized. It is not considered in terms of surface formation accuracy and cost.

  Then, on the wafer 8 shown in FIG. 37, a Mo layer (first seed film 91) made of Mo is sputtered on the wafer 8 (both main surfaces 81, 82 and the inner surface 491 of the through hole 49) by sputtering. Form. After the formation of the first seed film 91, a Cu layer (second seed film 92) made of Cu is formed on the first seed film 91 by sputtering.

  After the first seed film 91 and the second seed film 92 are formed, a resist is applied on the second seed film 92 by dip coating to form a new positive resist layer 912. Thereafter, in order to form a predetermined pattern corresponding to the inner side surface 491 of the through hole 49 and the vicinity thereof and the wiring pattern of the other main surface 43 of the base 4, the positive resist layer 912 is exposed and exposed by photolithography. Development is performed, and then the first seed film 91 and the second seed film 92 are subjected to metal etching with respect to a portion exposed by exposure and development. After metal etching of the first seed film 91 and the second seed film 92, the positive resist layer 912 is peeled and removed (see FIG. 38). The first seed film 91 and the second seed film 92 formed here constitute a part of the wiring pattern 55 of the base 4 shown in FIG.

  A resist is applied to the wafer 8 shown in FIG. 38 by dip coating to form a new positive resist layer 912. Thereafter, the positive resist layer 912 is exposed and developed by a photolithography method in order to form a predetermined pattern of the inner side surface 491 of the through hole 49 and its vicinity and the other main surface 43 of the base 4. Thereafter, a resin layer 61 made of Cu is formed on both the main surfaces 81 and 82 of the wafer 8 by plating. After the resin layer 61 is formed, the positive resist layer 912 is peeled off and a resin pattern 61 is formed on the through hole 49 and the other main surface 43 of the base 4 as shown in FIG.

  After the resin pattern 61 is formed, a Mo layer (first sputtered film 93) made of Mo is formed on both the main surfaces 81 and 82 of the wafer 8 by sputtering. After the formation of the first sputtered film 93, a Cu layer (second sputtered film 94) made of Cu is formed by sputtering on the first sputtered film 93 (see FIG. 40).

  After forming the first sputtered film 93 and the second sputtered film 94, a resist is applied on the second seed film 92 by a dip coating method to form a new positive resist layer 912. Thereafter, in order to form the first plating layer 95 to the fourth plating layer 98 (see FIG. 42 below), the positive resist layer 912 having a predetermined pattern corresponding to the first plating layer 95 to the fourth plating layer 98 is formed. Then, exposure and development are performed by a photolithography method (see FIG. 41).

  After the exposure and development of the positive resist layer 912, the first plating layer 95 is formed on both main surfaces 81 and 82 of the wafer 8, the second plating layer 96 is formed on the first plating layer 95, and the second A third plating layer 97 is formed on the plating layer 96, and a fourth plating layer 98 is formed on the third plating layer 97 (see FIG. 42).

  As shown in FIG. 42, after forming the first plating layer 95 to the fourth plating layer 98, the positive resist layer 912 and the first sputtered film 93 and the second sputtered film 94 under the positive resist layer 912 are removed. A large number of bases 4 are formed on the wafer 8 (see FIG. 43). By the first sputtered film 93, the second sputtered film 94, and the first plated layer 95 to the fourth plated layer 98 formed here, a part of the electrode pads 51 and 52 of the base 4 shown in FIG. A first bonding layer 48 is formed.

  After a large number of bases 4 are formed on the wafer 8, the large number of bases 4 are separated into a large number of bases 4, and a large number of bases 4 shown in FIG. 22 are manufactured.

  Then, the crystal vibrating piece 2 shown in FIG. 7 is arranged on the base 4 shown in FIG. 22 based on the position of the notch 541, and the crystal vibrating piece 2 is electrically connected to the base 4 via the conductive bumps 13 by the FCB method. The crystal vibrating piece 2 is mounted and held on the base 4 by mechanical ultrasonic bonding. In a separate step, the bonding material 12 is laminated on the second bonding layer 74 of the lid 7 shown in FIG. Thereafter, the lid 7 is arranged on the base 4 on which the crystal vibrating piece 2 is mounted and held, and the first bonding layer 48 of the base 4 and the second bonding layer 74 of the lid 7 are electromechanical by the FCB method through the bonding material 12. Then, the crystal resonator 1 shown in FIG. 21 is manufactured.

  According to the method for manufacturing the crystal unit 1 and the base 4 and the base 4 according to the second embodiment, the operational effects of the method for manufacturing the crystal unit 1, the base 4 and the base 4 according to the first embodiment described above. Has the same effect as

  The present invention can be implemented in various other forms without departing from the spirit or main features thereof. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

  The present invention can be applied to an electronic component package on which an electronic component element is mounted.

DESCRIPTION OF SYMBOLS 1 Crystal oscillator 11 Internal space 12 Bonding material 13 Conductive bump 2 Crystal vibrating piece (electronic component element)
20 Piezoelectric vibrating base plates 21 and 22 Leg portions 211 and 221 Tip portion 23 Base portion 231 One end surface 232 The other end surface 233 Side surface 24 Joint portion 241 Short side portion 242 Long side portion 243 Tip portion 25 Groove portion 26 Through hole 27 Joint locations 31 and 32 Excitation electrodes 33 and 34 Extraction electrode 4 Base (sealing member for electronic component package as sealing member)
41 bottom 42 one main surface 43 other main surface 44 wall 441 top surface 45 cavity 451 wall surface 452 one end 453 first wall surface 4531 flat surface 4532 curved surface 454 second wall surface 455 third wall surface 4551 flat surface 4552 curved surface 4553 first curved surface 4554 Second curved surface 456 Cavity bottom surface 457, 4571, 4572 Reference point 458 Protruding portion 4581 Protruding edge 459 Recessed surface 4592 Flat surface 4592 Inner surface 46 Pedestal portion 461 Main surface 48 First bonding layer 49 Through hole 491 Inner side surface 492 One end opening end 493 Open end 494 on the other end Flat surface 4941 First flat surface 4942 Second flat surface 495 Curved surface 496 Recessed portion 497 Inner surface 498 Projection portion 4981 Projection edge 499 Reference point 51, 52 Electrode pad 53, 54 External terminal electrode 541 Notch 55 Wiring Pattern 58, 59 Contact area 61 Resin pattern Resin, resin layer 7 lid 71 top 72 one main surface 73 wall 731 inner surface 732 outer surface 733 top surface 74 second bonding layer 8 wafer 81, 82 main surface 91 first seed film (first metal layer) )
92 Second seed film (second metal layer)
93 First sputtered film (first sputtered layer)
94 Second sputtered film (second sputtered layer)
95 First plating film (first plating layer)
96 Second plating film (second plating layer)
97 3rd plating film (3rd plating layer)
98 4th plating film (4th plating layer)
910 Mo film (or Cr film)
911 Au film 912 Positive resist layer B1, B2, B3, B4 surface

Claims (5)

In the electronic component package sealing member used as the sealing member of the electronic component package that hermetically seals the electrodes of the electronic component element with a plurality of sealing members,
A cavity for mounting electronic component elements is formed,
The wall surface of the cavity includes a curved surface continuously formed on the bottom surface of the cavity and bulging outward in the width direction of the cavity ,
The portion of the curved surface that swells most outward in the width direction of the cavity is disposed more outward in the width direction of the cavity than the end of the curved surface and the connection end of the curved surface with the bottom surface of the cavity. An electronic component package sealing member. In the electronic component package sealing member used as the sealing member of the electronic component package that hermetically seals the electrodes of the electronic component element with a plurality of sealing members,
A cavity for mounting electronic component elements is formed,
The wall surface of the cavity includes a curved surface formed of an aggregate of points that are continuously formed on the bottom surface of the cavity and radially extend from a preset reference point in the cavity,
There are a plurality of the preset reference points, and the plurality of reference points are arranged on one surface ,
The portion of the curved surface that swells most outward in the width direction of the cavity is disposed more outward in the width direction of the cavity than the end of the curved surface and the connection end of the curved surface with the bottom surface of the cavity. An electronic component package sealing member. In an electronic component package that hermetically seals an electrode of an electronic component element with a plurality of sealing members,
The electronic component package, wherein the at least one sealing member is the electronic component package sealing member according to claim 1. In the method of manufacturing an electronic component package sealing member used as the sealing member of an electronic component package that hermetically seals an electrode of an electronic component element with a plurality of sealing members,
The substrate that constitutes the electronic component package sealing member has a forming step of forming a cavity for mounting the electronic component element,
In the forming step, a recess having a bottom surface is formed on the base material by wet etching, and at least a part of the wall surface of the cavity is formed on a curved surface continuous with the bottom surface of the cavity by wet etching with the bottom surface of the recess as an etching target. And
Further, in the forming step, a portion of the curved surface that is most bulging outward in the width direction of the cavity is wider than a connection end of the curved surface with an edge of the curved surface and a bottom surface of the cavity. A method of manufacturing a sealing member for an electronic component package, characterized by being formed so as to be disposed outward . In the manufacturing method of the sealing member for electronic component packages according to claim 4,
In the forming step, a resist layer is formed on the base material by using an electrodeposition resist, and etching is performed using the formed resist layer.

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