JP5970743B2 - POSITION INFORMATION DETECTING SENSOR, POSITION INFORMATION DETECTING SENSOR MANUFACTURING METHOD, ENCODER, MOTOR DEVICE, AND ROBOT DEVICE - Google Patents

Description

  The present invention relates to a position information detection sensor, a method for manufacturing a position information detection sensor, an encoder, a motor device, and a robot device.

  An encoder is known as a device that detects rotational speed and position information of a rotating body such as a rotating shaft of a motor (for example, Patent Document 1). For example, the encoder is used by being attached to a rotating shaft of a motor. As a specific configuration of the encoder, for example, a rotating part on which a predetermined light reflection pattern and a magnetic pattern are formed is rotated integrally with a rotation shaft, and the reflected light is read by irradiating light on the light reflection pattern, for example, By detecting the change of the pattern, the rotation information of the rotating shaft of the motor can be detected.

  The encoder having the above-described configuration includes the rotating unit and a main body having a detecting unit that detects a change in reflected light or a magnetic pattern, for example. As a sensor for reading light through the light reflection pattern, for example, a light emitting / receiving sensor having a light emitting part and a light receiving part is used. A magnetic sensor is used as a sensor for detecting a change in the magnetic pattern.

JP 2004-20548 A

  However, the light emitting / receiving sensor and the magnetic sensor are formed as independent components, and are mounted at different positions on the main body. For this reason, it is necessary to secure a space for mounting the light emitting / receiving sensor and the magnetic sensor in the main body, which has been a problem in miniaturizing the main body.

  In view of the circumstances as described above, an object of the present invention is to provide a position information detection sensor, a method for manufacturing the position information detection sensor, an encoder, a motor device, and a robot device that can be miniaturized.

  According to the first aspect of the present invention, a light detection unit that detects light via an optical pattern, and a magnetic field detection unit that detects a magnetic field by a magnetic pattern, the light detection unit and the magnetic field detection unit, A position information detection sensor mounted on the same chip substrate is provided.

  According to the second aspect of the present invention, a light detection unit forming step for mounting a light detection unit for detecting light via an optical pattern on a chip substrate, and a magnetic field detection unit for detecting a magnetic field by the magnetic pattern on the chip substrate. There is provided a method for manufacturing a position information detection sensor including a magnetic field detection unit forming step to be mounted.

  According to the third aspect of the present invention, a rotating unit fixed to a rotor to be measured and formed with an optical pattern and a magnetic pattern, a detecting unit for detecting a magnetic field by the light and the magnetic pattern via the optical pattern, And an encoder in which the position information detection sensor according to the first aspect of the present invention is used as a detection unit.

  According to the fourth aspect of the present invention, a rotor, a drive unit that rotates the rotor, and an encoder that is fixed to the rotor and detects position information of the rotor are provided. A motor apparatus is provided in which an encoder according to the third aspect is used.

  According to a fifth aspect of the present invention, there is provided a robot apparatus comprising a rotating member and a motor device for rotating the rotating member, wherein the motor device according to the fourth aspect of the present invention is used as the motor device. The

  According to the aspect of the present invention, it is possible to provide a position information detection sensor that can be miniaturized, a method for manufacturing the position information detection sensor, an encoder, a motor device, and a robot device.

The top view which shows the structure of the position information detection sensor which concerns on 1st embodiment of this invention. The bottom view which shows the structure of the position information detection sensor which concerns on this embodiment. Sectional drawing which shows the structure of the positional information detection sensor which concerns on this embodiment. The block diagram which shows the processing system of the positional information detection sensor which concerns on this embodiment. The figure which shows the manufacture process of the positional information detection sensor which concerns on this embodiment. The figure which shows the manufacture process of the positional information detection sensor which concerns on this embodiment. The figure which shows the manufacture process of the positional information detection sensor which concerns on this embodiment. The figure which shows the manufacture process of the positional information detection sensor which concerns on this embodiment. The top view which shows the structure of the position information detection sensor which concerns on 2nd embodiment of this invention. Sectional drawing which shows the structure of the positional information detection sensor which concerns on this embodiment. The figure which shows the manufacture process of the positional information detection sensor which concerns on this embodiment. The figure which shows the manufacture process of the positional information detection sensor which concerns on this embodiment. The figure which shows the manufacture process of the positional information detection sensor which concerns on this embodiment. The figure which shows the manufacture process of the positional information detection sensor which concerns on this embodiment. The figure which shows the structure of the motor apparatus and encoder which concern on 3rd embodiment of this invention. The figure which shows the structure of a part of encoder based on this embodiment. The figure which shows the structure of the robot apparatus which concerns on 4th embodiment of this invention. The figure which shows the other structural example of the positional infomation detection sensor which concerns on this invention.

[First embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a plan view showing a configuration of a position information detection sensor 100 according to the present embodiment.
As shown in FIG. 1, the position information detection sensor 100 has a configuration in which a light detection unit 20 and a magnetic field detection unit 30 are mounted on a chip substrate 10 formed in a rectangular shape in plan view. The light detection unit 20 detects light via a predetermined optical pattern. Examples of the optical pattern include an origin pattern, an incremental pattern, an absolute pattern, and the like. The magnetic field detector 30 detects a magnetic field with a predetermined magnetic pattern.

  Hereinafter, in the description of each drawing, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. A direction parallel to one side of the chip substrate 10 is defined as an X direction, a direction orthogonal to the one side is defined as a Y direction, and a thickness direction of the chip substrate 10 is defined as a Z direction.

  The chip substrate 10 includes a base material 11, a processing circuit 12, an electrode 13, and a light emitting unit 14. The base material 11 is formed using a semiconductor material such as silicon, for example, and is formed in a rectangular plate shape as viewed in the Z direction. The processing circuit 12 is formed inside the base material 11. The processing circuit 12 processes information detected by the light detection unit 20 and the magnetic field detection unit 30.

  The electrode 13 inputs and outputs signals between the chip substrate 10 and the outside. A plurality of electrodes 13 are arranged along the + X side and the −X side of the chip substrate 10. The electrode 13 includes a first electrode 13 a connected to the processing circuit 12, the light emitting unit 14, the light detection unit 20, and the like, and a second electrode 13 b connected to the magnetic field detection unit 30. The first electrode 13a and the second electrode 13b are arranged in a line in the Y direction. The first electrode 13a and the second electrode 13b are electrically connected to an external electrode through a lead wire indicated by a one-dot chain line in the drawing. The second electrode 13b is formed through the + Z side surface and the −Z side surface of the chip substrate 10.

  The light emitting unit 14 emits light that irradiates the light pattern. The light emitting unit 14 is disposed at the center of the chip substrate 10 as viewed in the Z direction. The light emitting unit 14 includes a light emitting element 14a, a connecting unit 14b, and a cathode electrode 14c, and also includes an anode electrode (not shown). The light emitting element 14a is formed so as to emit laser light in one direction or a plurality of directions. The connection portion 14b and the cathode electrode 14c are connected by, for example, a lead wire.

  The light detection unit 20 receives light via the light pattern. The light detection unit 20 includes a first light receiving unit 21 and a second light receiving unit 22. The first light receiving unit 21 detects an incremental pattern among the light patterns. The first light receiving unit 21 is disposed on the + Y side of the light emitting unit 14 and the light detecting unit 20. The second light receiving unit 22 detects an absolute pattern among the light patterns. The second light receiving unit 22 is disposed on the −Y side of the light emitting unit 14 and the light detecting unit 20. Therefore, the 1st light-receiving part 21 and the 2nd light-receiving part 22 are arrange | positioned on both sides of the light emission part 14 and the light detection part 20 in the Y direction.

  The first light receiving unit 21 and the second light receiving unit 22 each have a plurality of light receiving elements 23. For example, a photodiode is used as the light receiving element 23. The light receiving element 23 is arranged along the −Y side and the + Y side of the substrate 11. The light receiving element 23 is formed in a shape corresponding to the shape of the light pattern. About the number of the light receiving elements 23, it can change suitably according to the structure of an optical pattern.

  The magnetic field detection unit 30 detects a magnetic field based on a magnetic pattern. The magnetic field detection unit 30 is disposed at a position away from the light emitting unit 14 and the light detection unit 20. The magnetic field detection unit 30 is disposed on the −Z side of the chip substrate 10 (a second surface 11b of the base material 11 described later).

FIG. 2 is a diagram illustrating a configuration when the chip substrate 10 is viewed from the −Z side.
As shown in FIG. 2, the magnetic field detection unit 30 includes a first detection unit 31 and a second detection unit 32. The first detection unit 31 is disposed on the −X side with respect to the center portion of the chip substrate 10. The second detection unit 32 is disposed on the + X side with respect to the center portion of the chip substrate 10. The first detection unit 31 and the second detection unit 32 are arranged at positions sandwiching the central portion of the chip substrate 10. Note that the first detection unit 31 and the second detection unit 32 may be arranged at the center of the chip substrate 10 or at the end of the chip substrate 10.

  The first detection unit 31 and the second detection unit 32 have a magnetic thin film 33. The magnetic thin film 33 has two orthogonal repeating patterns formed by, for example, metal wiring. The magnetic thin film 33 is connected to the third electrode 13 c by a connection wiring 34. The third electrode 13c is connected to the second electrode 13b. The third electrode 13c is disposed at a position overlapping the second electrode 13b when viewed in the Z direction.

FIG. 3 is a diagram showing a configuration when the configuration along the A1-A5 (A1-A2-A3-A4-A5) cross section in FIG. 1 is developed in the left-right direction.
As shown in FIG. 3, the insulating layer 15, the light receiving element 23, the protective layer 16, and the electrode 13 are sequentially stacked on the first surface 11 a on the + Z side of the base material 11 in the chip substrate 10.

The insulating layer 15 is formed using, for example, SiO ₂ . The light receiving element 23 is formed on the insulating layer 15 and is covered with the protective layer 16. The protective layer 16 is formed using, for example, SiN or SiO ₂ . On the protective layer 16, the first electrode 13a and the second electrode 13b are formed. The first electrode 13a is connected to the light receiving element 23 via a wiring (not shown).

  A shield layer 17, an insulating layer 18, a magnetic thin film 33, a protective layer 19, and a third electrode 13 c are sequentially stacked on the second surface 11 b of the base 11 of the chip substrate 10. The shield layer 17 is formed using a metal such as aluminum. The shield layer 17 has a function of shielding at least a part of a magnetic field other than the magnetic field by the predetermined magnetic pattern and reducing noise of an electric signal output from the magnetic thin film 33.

The insulating layer 18 is formed using, for example, SiO ₂ . The protective layer 19 is formed using, for example, SiN or SiO ₂ . The light receiving element 23 of the light detection unit 20 is disposed on the insulating layer 15 and is covered with the protective layer 16. The magnetic thin film 33 and the connection wiring 34 of the magnetic field detection unit 30 are formed on the insulating layer 18 and are covered with the protective layer 19.

  A third electrode 13 c is formed on the protective layer 19. The third electrode 13 c is connected to the magnetic thin film 33 through the connection wiring 34. A through hole H is formed in the chip substrate 10. The third electrode 13c is connected to the second electrode 13b via a through portion 13d formed so as to fill the through hole H. The connection wiring 34 is connected to the through portion 13d.

FIG. 4 is a block diagram showing a control circuit CC which is an example of the circuit configuration of the chip substrate 10.
As shown in FIG. 4, the chip substrate 10 is provided with a comparator 35 connected to the magnetic thin film 33 of the first detection unit 31 and the second detection unit 32. The comparator 35 is connected to the processing circuit 12. The comparator 35 receives the detection signals (MAn, MAp, MBn, MBp) detected by the magnetic field detection unit 30. Then, the comparator 35 generates binarized multi-rotation signals MA and MB, and transmits the multi-rotation signals MA and MB to the processing circuit 12.

  The chip substrate 10 is connected to an amplifier 24 and a comparator 26 connected to the light receiving element 23 of the first light receiving unit 21 for detecting an incremental pattern, and to a light receiving element 23 of the second light receiving unit 22 for detecting an absolute pattern. An amplifier 25 and a comparator 27 are formed. The comparator 26 receives the detection signal detected by the first light receiving unit 21 and amplified by the amplifier 24. Then, the comparator 26 generates a binarized incremental signal INC and transmits the incremental signal INC to the processing circuit 12. The comparator 27 receives the detection signal detected by the second light receiving unit 22 and amplified by the amplifier 25. Then, the comparator 27 generates a binarized absolute signal ABS and transmits the absolute signal ABS to the processing circuit 12.

  The processing circuit 12 generates the multi-rotation information MT based on the multi-rotation signals MA and MB received from the comparator 35, and based on the interpolation incremental signal INC received from the comparator 26 and the absolute signal ABS received from the comparator 27. One rotation information ST is generated. For example, the processing circuit 12 outputs position information including the multi-rotation information MT and the single-rotation information ST to the external controller CONT in a serial manner in response to a request from the external controller CONT. The processing circuit 12 is connected to the first electrode 13a. For example, the position information is output to the external controller CONT via the first electrode 13a. Note that the control circuit CC in the present embodiment is configured to include the amplifiers 24 and 25, the comparators 26 and 27, the comparator 35, and the processing circuit 12, but may be configured not to include the processing circuit 12, for example. Further, the single rotation information ST in the present embodiment is absolute position information, but may be relative position information.

Next, with reference to FIGS. 5-8, the manufacturing method of the positional information detection sensor 100 comprised as mentioned above is demonstrated.
5-8 is a figure which shows the manufacturing process of the positional information detection sensor 100. FIG.
First, as shown in FIG. 5, the insulating layer 15 is formed on the first surface 11a of the substrate 11 on which the processing circuit 12, the amplifiers 24 and 25, and the comparators 26, 27, and 35 are formed. In addition, you may perform the process of forming said processing circuit 12, amplifier 24 and 25, and comparators 26, 27, and 35 in the base material 11 (control circuit formation process). After the insulating layer 15 is formed, the light receiving element 23 and a wiring (not shown) are patterned on the insulating layer 15 by using, for example, a sputtering method, a photolithography method, or an etching method (photodetection portion forming step).

  After forming the light receiving element 23 and a wiring (not shown), the protective layer 16 is formed on the insulating layer 15 including the light receiving element 23 (protective layer forming step). After forming the protective layer 16, the first electrode 13 a and the second electrode 13 b are patterned on the protective layer 16. At this stage, the first electrode 13 a and the second electrode 13 b are in a state of being stacked on the protective layer 16.

  Next, as shown in FIG. 6, the shield layer 17 is formed on the second surface 11b of the base material 11 (shield layer forming step). After forming the shield layer 17, the insulating layer 18 is formed on the shield layer 17. After the insulating layer 18 is formed, the magnetic thin film 33 and the connection wiring 34 are formed on the insulating layer 18 by using, for example, a sputtering method, a photolithography method, or an etching method (magnetic field detection unit forming step). In this case, the magnetic thin film 33 of the first detection unit 31 and the magnetic thin film 33 of the second detection unit 32 are formed in the same process. After forming the magnetic thin film 33, the protective layer 19 is formed on the insulating layer 18 including the magnetic thin film 33 (protective layer forming step).

  Next, as shown in FIG. 7, a through hole H is formed in the portion from the surface of the protective layer 19 to the bottom of the second electrode 13 b using, for example, an etching method. The through hole H is formed through the protective layer 19, the insulating layer 18, the shield layer 17, the base material 11, the insulating layer 15, and the protective layer 16. The through hole H is formed so that a part of the connection wiring 34 is exposed.

  Next, as illustrated in FIG. 8, a through portion 13 d is formed inside the through hole H. The through portion 13d is connected to the connection wiring 34 exposed in the through hole H (connection process). After forming the penetrating part 13d, for example, the third electrode 13c is patterned so as to overlap the penetrating part 13d (electrode forming step). Then, the position information detection sensor 100 is formed by disposing the light emitting part 14 on the protective layer 16 (light emitting part forming step).

  As described above, according to the present embodiment, the light detection unit 20 that detects light via the optical pattern and the magnetic field detection unit 30 that detects the magnetic field based on the magnetic pattern are provided, and the light detection unit 20 and the magnetic field detection are provided. Since the portion 30 is mounted on the same chip substrate 10, it is possible to reduce the size as compared with the case where both are formed as independent components. Further, according to the present embodiment, since the magnetic field detection unit 30 and the light detection unit 20 can be mounted on the same chip substrate 10 in the manufacturing process, the manufacturing cost can be reduced.

  In addition, according to the present embodiment, since a plurality of functions such as an amplifier (eg, amplifiers 24 and 25) and a comparator (eg, comparators 26, 27, and 35) can be built in the chip substrate 10, noise resistance is improved. To do. For example, the position information detection sensor 100 in the present embodiment includes a plurality of functions such as amplifiers (eg, amplifiers 24 and 25) and comparators (eg, comparators 26, 27, and 35) in the chip substrate 10 to each other. Since the length of the line connecting the two can be shortened, the line connecting the magnetic field detection unit 30 and the comparator 35, the line connecting the amplifier (eg, the amplifiers 24 and 25) and the comparator (eg, the comparators 26 and 27), and light detection A line connecting the unit 30 and the amplifier (for example, the amplifiers 24 and 25) can be formed with a minute line in consideration of downsizing and backup.

[Second Embodiment]
Next, a second embodiment of the present invention will be described.
In the present embodiment, since the arrangement of the magnetic field detection unit 30 is different from that in the first embodiment, the difference will be mainly described. Moreover, about the structure same as 1st embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted or simplified.

FIG. 9 is a diagram illustrating a configuration of the position information detection sensor 200 according to the present embodiment.
As shown in FIG. 9, in the present embodiment, the light detection unit 20 and the magnetic field detection unit 30 are provided on the same surface (eg, + Z side surface) of the chip substrate 10. The position in the Z direction view is provided at a position where the first detection unit 31 and the second detection unit 32 sandwich the light detection unit 20 and the light emitting unit 14 as in the first embodiment.

  In addition, the 1st detection part 31 and the 2nd detection part 32 are the 2nd light-receiving part 22, the 1st detection part 31, the 2nd detection part 32, and the 1st along predetermined Y direction like FIG. The light receiving units 21 are arranged in this order. Moreover, the 1st detection part 31 and the 2nd detection part 32 are the 1st detection part 31, the 2nd detection part 32, the 2nd light-receiving part 22, along predetermined Y direction like FIG. You may arrange | position in order of the 1st light-receiving part 21. FIG.

  Further, the first detection unit 31 and the second detection unit 32 in the present embodiment are unidirectional in which at least two of the first light receiving unit 21, the second light receiving unit 22, and the light emitting unit 14 are arranged side by side on the chip substrate. Or at least two of the first light receiving unit 21, the second light receiving unit 22, and the light emitting unit 14 are arranged along one direction arranged side by side on the chip substrate. It is also possible (FIG. 18 to be described later).

FIG. 10 is a diagram illustrating a configuration when the configuration along the B1-B5 (B1-B2-B3-B4-B5) cross section in FIG. 9 is developed in the left-right direction.
As shown in FIG. 10, the shield layer 17, the insulating layer 15, the light receiving element 23, the magnetic thin film 33, the protective layer 16, and the electrode 13 are sequentially disposed on the first surface 11 a on the + Z side of the base material 11 of the chip substrate 10. Are stacked. In the present embodiment, the shield layer 17 is provided on the first surface 11 a, and the insulating layer 15 is provided on the shield layer 17.

  The light receiving element 23 and the magnetic thin film 33 are formed on the insulating layer 15 and covered with the protective layer 16. On the protective layer 16, the first electrode 13a and the second electrode 13b are formed. The first electrode 13a is connected to the light receiving element 23 via a wiring (not shown). The magnetic thin film 33 is connected to the second electrode 13b via a connection wiring 34 (see FIG. 9).

Next, with reference to FIGS. 11-14, the manufacturing method of the positional information detection sensor 200 comprised as mentioned above is demonstrated.
FIGS. 11-14 is a figure which shows the manufacturing process of the positional information detection sensor 200. FIG.
First, as shown in FIG. 11, the shield layer 17 is formed on the first surface 11 a of the substrate 11, and the insulating layer 15 is formed on the shield layer 17.

  After forming the insulating layer 15, as shown in FIG. 12, the light receiving element 23 and a wiring (not shown) are patterned on the insulating layer 15 by using, for example, a sputtering method, a photolithography method, or an etching method (photodetection portion formation). Process). After forming the light receiving element 23 and a wiring (not shown), the magnetic thin film 33 and the connection wiring 34 are formed on the insulating layer 15 by using, for example, a sputtering method, a photolithography method, or an etching method (magnetic field detection unit forming step).

  After forming the light receiving element 23 and the magnetic thin film 33 on the insulating layer 15, as shown in FIG. 13, the protective layer 16 is formed on the insulating layer 15 including the light receiving element 23 and the magnetic thin film 33 (protective layer forming step). ). Therefore, in this embodiment, the protective layer 16 covering the light receiving element 23 and the magnetic thin film 33 can be formed in one step.

  After forming the protective layer 16, the first electrode 13a and the second electrode 13b are patterned on the protective layer 16, as shown in FIG. In this case, the first electrode 13 a is formed so as to be connected to a wiring (not shown) of the light receiving element 23, and the second electrode 13 b is formed so as to be connected to the connection wiring 34 of the magnetic thin film 33. Since the first electrode 13a and the second electrode 13b are formed in the same layer, the first electrode 13a and the second electrode 13b can be formed in the same process. Thereafter, the position information detection sensor 200 is formed by disposing the light emitting unit 14 on the protective layer 16.

  As described above, according to the present embodiment, since the light detection unit 20 and the magnetic field detection unit 30 are provided on the same surface of the chip substrate 10, the light detection unit 20 and the magnetic field detection unit 30 are connected to the chip substrate 10. The manufacturing process can be further shortened as compared with the case of forming on different surfaces.

[Third embodiment]
Next, a third embodiment of the present invention will be described.
FIG. 15 is a diagram illustrating a configuration of the encoder and the motor device according to the present embodiment.
As shown in FIG. 15, the motor device MTR includes a rotation shaft SF, a drive unit BD that rotates the rotation shaft SF, and an encoder EC that detects rotation information of the rotation shaft SF. In FIG. 15, the central axis direction of the rotation axis SF is set as the Z direction.

  The encoder EC has a rotating part R and a detecting part D. The rotating part R is fixed to the rotating shaft SF of the motor device MTR and rotates integrally with the rotating shaft SF. The rotating portion R is formed in a disk shape using, for example, SUS. By using a material having high rigidity such as SUS as a constituent material of the rotating portion R, the rotating portion R having excellent deformation resistance and the like is formed. Of course, other materials may be used as the constituent material of the rotating portion R. The rotating part R has a mounting part 320, a pattern forming part 321 and a concave part 323.

  The attachment portion 320 is provided on the lower surface Rb of the rotating portion R. An insertion hole 320a is formed on the lower surface side of the mounting portion 320 in the center portion in plan view. The rotation hole SF of the motor device MTR is inserted into the insertion hole 320a. The attachment portion 320 has a fixing mechanism (not shown) that fixes the rotation shaft SF and the attachment portion 320 in a state where the rotation shaft SF is inserted into the insertion hole 320a.

  The pattern forming portion 321 is provided in an annular shape on the peripheral edge portion of the upper surface Ra of the rotating portion R. A light reflecting pattern 324 is formed on the pattern forming portion 321. The light reflection pattern 324 is formed in an annular shape along the outer periphery of the rotating portion R, for example.

  For example, the light reflection pattern 324 includes an incremental pattern 324a and an absolute pattern 324b. The incremental pattern 324a is formed outside the light reflecting pattern 324 in the radial direction of the rotating portion R. The absolute pattern 324b is formed on the inside of the light reflecting pattern 324 in the radial direction of the rotating portion R.

  The concave portion 323 is formed on the upper surface Ra side opposite to the attachment portion 320. The magnet member M is accommodated in the recess 323.

  The magnet member M is a permanent magnet formed in an annular shape along the rotation direction of the rotating portion R. The magnet member M is arrange | positioned at the peripheral part of the rotation part R, for example. A predetermined magnetic pattern 334 is formed on the magnet member M. As the magnetic pattern 334 of the magnet member M, for example, a magnetic field in which a half region of the ring is magnetized to the N pole and the other half region of the ring is magnetized to the S pole when viewed in the axial direction of the rotation axis SF. Examples include patterns. The magnet member M is accommodated in the recess 323 of the rotating part R. The magnet member M is fixed to the rotating part R through, for example, an adhesive (not shown). Therefore, the magnet member M is integrally formed with the rotating part R.

  The detection unit D includes a housing 341, a sensor SR, and a bias magnet 342. The sensor SR detects light via the light reflection pattern 324 and a magnetic field generated by the magnetic pattern 334 of the magnet member M. As the sensor SR, for example, the position information detection sensor 100 described in the first embodiment, the position information detection sensor 200 described in the second embodiment, or the like is used.

  The bias magnet 342 is a magnet that forms a combined magnetic field with the magnetic field of the magnet member M. Examples of the material constituting the bias magnet 342 include a rare-earth magnet having a large magnetic force such as samarium / cobalt.

  The magnetic thin film 33 provided in the first detection unit 31 and the second detection unit 32 in the magnetic field detection unit 30 of the sensor SR functions as a magnetoresistive element with the bias magnet 342. That is, when the direction of the magnetic field is close to the direction perpendicular to the direction of the current flowing in the repetitive pattern of the magnetic thin film 33, the electric resistance is lowered. The magnetic thin film 33 converts the direction of the magnetic field into an electric signal by using the decrease in electric resistance.

  Next, the positional relationship between the first detection unit 31 and the second detection unit 32 and the rotation axis SF will be described. FIG. 16 is a diagram illustrating a configuration of the detection unit D. In FIG. 16, the XYZ directions are set so that the arrangement of the sensors SR matches the arrangement of the position information detection sensors 100 in the first embodiment. In order to explain the positional relationship between the first detection unit 31 and the second detection unit 32 and the rotation axis SF, FIG. 16 shows the position of the rotation axis SF.

  As shown in FIG. 16, when viewed in the central axis direction (Z direction view) of the rotation axis SF, a reference line segment SG0 extending in parallel to the Y direction from the center axis C of the rotation axis SF to the sensor SR side is set to 0 °. An angle formed by the reference line segment SG0 and the first line segment SG1 extending from the central axis C toward the first detection unit 31 in the Z direction view is θ1, and the reference line segment SG0 and the center in the Z direction view are the center. Assuming that an angle formed by the second line segment SG2 extending from the axis C toward the second detection unit 32 is θ2, the first detection unit 31 and the second detection unit 32 have 0 ° <θ1 <90 °, and , 0 ° <θ2 <90 °. In the present embodiment, as an example, the first detection unit 31 and the second detection unit 32 are arranged so that θ1 + θ2 = 90 °. Note that the end of the reference line segment SG0 is not limited to the central axis C of the rotation axis SF, and may be at another position (eg, the central axis of the light reflection pattern 324).

Further, the length of the first line segment SG1 that is the distance from the central axis C to the first detection unit 31 is L1, and the length of the second line segment SG2 that is the distance from the central axis C to the second detection unit 32. Is L2, the angle formed by the first line segment SG1 and the second line segment SG2 is θ3, and the distance between the first detector 31 and the second detector 32 is L3, the first detector 31 and The second detection unit 32
(L3) ² = (L1) ² + (L2) ² −2 · L1 · L2 · cos θ3
(0 ° <θ3 <180 °)
It is arranged to satisfy.

When L1 = L2, the first detection unit 31 and the second detection unit 32 are arranged on the circumference of the same circle with the central axis C as the center. In this case, when the radius of the circle is R and the length of the arc defined by the angle θ3 is Ra, the first detection unit 31 and the second detection unit 32 are
Ra = 2πR × (θ3 / 360 °)
(0 ° <θ3 <180 °)
It is arranged to satisfy.

  As described above, the encoder EC according to the present embodiment is fixed to the rotation shaft SF of the motor device MTR, and the rotating part R in which the light reflection pattern 324 and the magnetic pattern 334 are formed, and the light that passes through the light reflection pattern 324. And the detection unit D that detects the magnetic field by the magnetic pattern 334, and the position information detection sensor 100 or 200 described in the above embodiment is used as the detection unit D. Therefore, the encoder EC is small and has high detection reliability. And a motor device MTR having high rotational characteristics can be provided.

[Fourth embodiment]
Next, a fourth embodiment of the present invention will be described.
FIG. 17 is a diagram illustrating a configuration of a part (tip of a finger portion of a hand robot) of a robot apparatus RBT including the motor apparatus MTR described in the first embodiment to the third embodiment as an example. The motor device MTR described in the above embodiment may be used as a drive unit that drives the arm unit of the robot device RBT.

  As shown in FIG. 17, the robot apparatus RBT includes a terminal node portion 101, a middle node portion 102, and a joint portion 103, and the terminal node portion 101 and the middle node portion 102 are connected via the joint portion 103. It has become. The joint portion 103 is provided with a shaft support portion 103a and a shaft portion 103b. The shaft support portion 103 a is fixed to the middle joint portion 102. The shaft portion 103b is supported in a state of being fixed by the shaft support portion 103a.

  The end node portion 101 includes a connecting portion 101a and a gear 101b. The shaft portion 103b of the joint portion 103 is penetrated through the connecting portion 101a, and the end node portion 101 is rotatable with the shaft portion 103b as a rotation axis. The gear 101b is a bevel gear fixed to the connecting portion 101a. The connecting portion 101a rotates integrally with the gear 101b.

  The middle joint portion 102 includes a housing 102a and a motor device MTR. As the motor device MTR, the motor device MTR described in the above embodiment can be used. The motor device MTR is provided in the housing 102a. A rotating shaft member 104a is attached to the motor device MTR. A gear 104b is provided at the tip of the rotating shaft member 104a. The gear 104b is a bevel gear fixed to the rotating shaft member 104a. The gear 104b is in mesh with the gear 101b. Note that a configuration in which a gear is directly formed on the rotating shaft member 104a may be employed.

  In the robot apparatus RBT configured as described above, the rotating shaft member 104a rotates by driving the motor apparatus MTR, and the gear 104b rotates integrally with the rotating shaft member 104a. The rotation of the gear 104b is transmitted to the gear 101b meshed with the gear 104b, and the gear 101b rotates. As the gear 101b rotates, the connecting portion 101a also rotates, whereby the end node portion 101 rotates about the shaft portion 103b.

  As described above, according to the present embodiment, by mounting the motor device MTR having a small size and high rotational characteristics, the robot device RBT that is lightweight and has high mobility is provided.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
In the above embodiment, the light reflection type configuration in which the light emitting unit 14 and the light detection unit 20 are provided on the chip substrate 10 has been described as an example, but the present invention is not limited to this. For example, as shown in FIG. 18, the light emitting unit 14 may not be provided on the chip substrate 10. The position information detection sensor 300 having such a configuration can be used by being attached to an encoder having a light transmission type pattern as an optical pattern, for example.

  In the above embodiment, the light detection unit 20 detects single rotation information and the magnetic field detection unit 30 detects multi-rotation information. However, the present invention is not limited to this. The configuration may be such that rotation information is detected, and the magnetic field detection unit 30 detects one rotation information. Moreover, although the 1st detection part 31 and the 2nd detection part 32 in the said embodiment are comprised by MR sensor, you may be comprised by sensors, such as a GIG sensor, a GMR sensor, and a Hall element.

MTR ... Motor device SF ... Rotating shaft BD ... Driver EC ... Encoder R ... Rotating unit D ... Detector RBT ... Robot device SG0 ... Reference line segment SG1 ... First line segment SG2 ... Second line segment 10 ... Chip substrate 11 ... Substrate 11a ... first surface 11b ... second surface 12 ... processing circuit 13 ... electrode 13a ... first electrode 13b ... second electrode 13c ... third electrode 13d ... penetrating portion 14 ... light emitting portion 15, 18 ... insulating layer 16, DESCRIPTION OF SYMBOLS 19 ... Protective layer 17 ... Shield layer 20 ... Light detection part 21 ... 1st light-receiving part 22 ... 2nd light-receiving part 23 ... Light receiving element 30 ... Magnetic field detection part 31 ... 1st detection part 32 ... 2nd detection part 33 ... Magnetic thin film 100, 200, 300 ... position information detection sensor 324 ... light reflection pattern 334 ... magnetic pattern

Claims (33)

A light emitting part for emitting light;
A light detection unit for detecting the light via an optical pattern;
A magnetic field detector for detecting a magnetic field by a magnetic pattern;
With
The light emitting unit, the light detection unit, and the magnetic field detection unit are mounted on the same chip substrate,
The light detection unit includes a first light receiving unit and a second light receiving unit,
The magnetic field detection unit has a first detection unit and a second detection unit,
The light emitting unit is positioned between the first light receiving unit and the second light receiving unit with respect to a first direction, and the first detection unit and the first direction with respect to a second direction different from the first direction. Position information detection sensor located between two detectors. The position information detection sensor according to claim 1, wherein the first detection unit and the second detection unit are located between the first light receiving unit and the second light receiving unit in the first direction. The optical pattern is disposed on the rotating part,
The light emitting unit is located between the first light receiving unit and the second light receiving unit with respect to the radial direction of the rotating unit, and the first detecting unit and the second detecting unit with respect to the rotating direction of the rotating unit. The position information detection sensor according to claim 1, wherein the position information detection sensor is located between the first and second parts. The optical pattern and the magnetic pattern are arranged in a rotating part,
The chip substrate includes a control circuit that outputs one rotation information of the rotation unit based on a detection result by the light detection unit, and outputs multi-rotation information of the rotation unit based on a detection result by the magnetic field detection unit. The position information detection sensor according to any one of claims 1 to 3. The first light receiving unit includes a plurality of light receiving elements that receive the first light of the light,
5. The position information according to claim 1, wherein the second light receiving unit includes a plurality of light receiving elements that receive second light different from the first light among the light. Detection sensor. The control circuit includes a comparator and a processing circuit,
The comparator is
A first comparator that generates a multi-rotation signal from the detection signal detected in the magnetic field detection unit and outputs the multi-rotation signal to the processing circuit;
A second comparator that generates an incremental signal from the detection signal detected in the first light receiving unit and outputs the incremental signal to the processing circuit;
A third comparator that generates an absolute signal from the detection signal detected in the second light receiving unit and outputs the absolute signal to the processing circuit,
The processing circuit generates multi-rotation information based on the multi-rotation signal, and generates single-rotation information based on the incremental signal and the absolute signal.
The position information detection sensor according to claim 4 . An electrode disposed along a side of the chip substrate and mounted on the chip substrate;
The position information detection according to any one of claims 1 to 6, wherein the electrode includes a first electrode connected to the light detection unit and a second electrode connected to the magnetic field detection unit. Sensor.   The position information detection sensor according to claim 1, wherein the magnetic field detection unit includes a magnetic thin film formed on the chip substrate.   The position information detection sensor according to any one of claims 1 to 8, further comprising a shield layer that reduces a magnetic field different from the magnetic field generated by the magnetic pattern.   The positional information detection sensor as described in any one of Claims 1-9 provided with the protective layer which protects the said photon detection part and the said magnetic field detection part. The optical pattern and the magnetic pattern are provided so as to rotate integrally with a rotor to be measured,
In the central axis direction view of the rotor , a reference line segment extending from the central axis of the rotor to the light detection unit side is set to 0 °,
An angle formed by the reference line segment and a first line segment extending from the central axis of the rotor toward the first detection unit in the direction of the central axis direction of the rotor is θ1,
When the angle formed by the reference line segment and the second line segment extending from the central axis of the rotor toward the second detection unit in the direction of the central axis direction of the rotor is θ2,
The first detector and the second detector are
0 ° <θ1 <90 ° and 0 ° <θ2 <90 °
The position information detection sensor according to any one of claims 1 to 10, wherein the position information detection sensor is arranged so as to satisfy the following. The first detector and the second detector are arranged on a concentric circle,
An angle formed by a straight line extending from the center point of the concentric circle toward the first detection unit and a straight line extending from the center point of the concentric circle toward the second detection unit is θ3,
The distance from the center point of the concentric circle to the first detection unit is L1,
The distance from the center point of the concentric circle to the second detection unit is L2,
When the distance between the first detection unit and the second detection unit is L3,
The first detection unit and the second detection unit are:
(L3) ² = (L1) ² + (L2) ² −2 · L1 · L2 · cos θ3
(0 ° <θ3 <180 °)
The position information detection sensor according to claim 1, wherein the position information detection sensor is arranged so as to satisfy The first detection unit and the second detection unit are arranged on the circumference of the same circle,
An angle formed by a straight line extending from the center point of the circle toward the first detection unit and a straight line extending from the center point of the circle toward the second detection unit is θ3,
Let R be the radius of the circle,
If the length of the arc defined by the angle θ3 is Ra,
The first detection unit and the second detection unit are:
Ra = 2πR × (θ3 / 360 °)
(0 ° <θ3 <180 °)
The position information detection sensor according to claim 1, wherein the position information detection sensor is arranged so as to satisfy The chip substrate has a plurality of surfaces,
The positional information detection sensor according to claim 1, wherein the light detection unit and the magnetic field detection unit are provided on the same surface. The chip substrate has a plurality of surfaces,
The position information detection sensor according to claim 1, wherein the light detection unit and the magnetic field detection unit are provided on different surfaces. The electrode is formed on a surface of the chip substrate on which the light detection unit is provided,
The position information detection sensor according to claim 7, wherein the magnetic field detection unit is connected to the electrode through the chip substrate. A light emitting part forming step of mounting a light emitting part for emitting light on a chip substrate;
As a light detection unit for detecting light via the optical pattern, a light detection unit forming step of mounting the first light receiving unit and the second light receiving unit on the chip substrate;
As a magnetic field detection unit for detecting a magnetic field by a magnetic pattern, including a magnetic field detection unit forming step of mounting a first detection unit and a second detection unit on the chip substrate,
In the light emitting portion forming step, the light emitting portion is disposed between the first light receiving portion and the second light receiving portion with respect to the first direction, and the light emitting portion is in the first direction. The manufacturing method of the position information detection sensor arrange | positioned so that it may be located between said 1st detection part and said 2nd detection part regarding the 2nd direction different from. The manufacturing method of the position information detection sensor according to claim 17, wherein the first detection unit and the second detection unit are arranged between the first light receiving unit and the second light receiving unit with respect to the first direction. . The optical pattern and the magnetic pattern are arranged in a rotating part,
The first direction is a radial direction of the rotating part, and the second direction is a rotating direction of the rotating part.
The manufacturing method of the positional information detection sensor of Claim 17 or 18. The manufacturing method of the position information detection sensor according to any one of claims 17 to 19, wherein the magnetic field detection unit forming step includes patterning a magnetic thin film on the chip substrate. The manufacturing method of the positional information detection sensor as described in any one of Claims 17-20 including the shield layer formation process which forms the shield layer which reduces the magnetic field different from the magnetic field by the said magnetic pattern in the said chip | tip substrate. . The manufacturing method of the positional information detection sensor as described in any one of Claims 17-21 including the protective layer formation process of forming the protective layer which protects the said photon detection part and the said magnetic field detection part. The optical pattern and the magnetic pattern are provided so as to rotate integrally with a rotor to be measured,
In the central axis direction view of the rotor , a reference line segment extending from the central axis of the rotor to the light detection unit side is set to 0 °,
An angle formed by the reference line segment and a first line segment extending from the central axis of the rotor toward the first detection unit in the direction of the central axis direction of the rotor is θ1,
When the angle formed by the reference line segment and the second line segment extending from the central axis of the rotor toward the second detection unit in the direction of the central axis direction of the rotor is θ2,
The magnetic field detector forming step includes
0 ° <θ1 <90 ° and 0 ° <θ2 <90 °
The manufacturing method of the position information detection sensor according to any one of claims 17 to 22, further comprising: forming the first detection unit and the second detection unit so as to satisfy the above condition. The first detector and the second detector are arranged on a concentric circle,
An angle formed by a straight line extending from the center point of the concentric circle toward the first detection unit and a straight line extending from the center point of the concentric circle toward the second detection unit is θ3,
The distance from the center point of the concentric circle to the first detection unit is L1,
The distance from the center point of the concentric circle to the second detection unit is L2,
When the distance between the first detection unit and the second detection unit is L3,
The magnetic field detector forming step includes
(L3) ² = (L1) ² + (L2) ² −2 · L1 · L2 · cos θ3
(0 ° <θ3 <180 °)
The manufacturing method of the position information detection sensor according to any one of claims 17 to 23, wherein the first detection unit and the second detection unit are formed so as to satisfy The first detection unit and the second detection unit are arranged on the circumference of the same circle,
An angle formed by a straight line extending from the center point of the circle toward the first detection unit and a straight line extending from the center point of the circle toward the second detection unit is θ3,
Let the radius of the circle be R,
If the length of the arc defined by the angle θ3 is Ra,
The magnetic field detector forming step includes
Ra = 2πR × (θ3 / 360 °)
(0 ° <θ3 <180 °)
The manufacturing method of the position information detection sensor according to any one of claims 17 to 23, wherein the first detection unit and the second detection unit are formed so as to satisfy the above condition. The position according to any one of claims 17 to 25, further comprising: a control circuit forming step of forming, on the chip substrate, a control circuit that processes the detection result by the light detection unit and the detection result by the magnetic field detection unit. Manufacturing method of information detection sensor. The said magnetic field detection part formation process includes forming the said optical detection part and the said magnetic field detection part in the same surface among the said chip | tip substrates which have several surfaces. The manufacturing method of the positional information detection sensor of description. The magnetic field detecting section formation step, any one of claims 26 to claim 17 comprising forming the light detecting unit and the magnetic field detecting unit to different surfaces of the chip substrate having a plurality of surfaces The manufacturing method of the positional information detection sensor of description. An electrode forming step of forming an electrode on the surface of the chip substrate on which the light detection unit is formed;
The manufacturing method of the position information detection sensor according to claim 28, further comprising: a connecting step of connecting the magnetic field detection unit and the electrode so as to penetrate the chip substrate. A rotating part fixed to the rotor to be measured and formed with an optical pattern and a magnetic pattern;
A detection unit for detecting light via the optical pattern and a magnetic field by the magnetic pattern,
The position information detection sensor according to any one of claims 1 to 16 is used as the detection unit. A rotating part fixed to the rotor to be measured and formed with an optical pattern and a magnetic pattern;
A light emitting part for emitting light;
A light detection unit for detecting the light via the optical pattern;
A magnetic field detector for detecting a magnetic field by the magnetic pattern;
With
The light emitting unit, the light detection unit, and the magnetic field detection unit are mounted on the same chip substrate,
The light detection unit includes at least a first light receiving unit and a second light receiving unit,
The magnetic field detector has at least a first detector and a second detector,
The light emitting unit is located between the first light receiving unit and the second light receiving unit with respect to the radial direction of the rotating unit, and extends straight from the central axis of the rotating unit toward the first detecting unit. And an encoder located between a central axis of the rotating part and a straight line extending toward the second detecting part. A rotor,
A drive unit for rotating the rotor;
An encoder fixed to the rotor and detecting position information of the rotor;
A motor device in which the encoder according to claim 30 or 31 is used as the encoder. A rotating member;
A motor device for rotating the rotating member,
A motor apparatus according to claim 32 , wherein the motor apparatus is a robot apparatus.

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