JP5935461B2 - Plasma processing equipment - Google Patents

Description

  The present invention relates to a plasma processing apparatus that generates plasma in a vacuum chamber to generate a thin film on a surface to be processed or performs etching.

  Conventionally, the plasma processing apparatus (plasma CVD apparatus) shown by patent documents 1-3 is known. These plasma processing apparatuses include a vacuum chamber having a processing chamber that can be depressurized in a vacuum state, and a plurality of connectors electrically connected to a high-frequency power source are disposed on the ceiling of the vacuum chamber. . An array antenna unit having a plurality of electrode bars is provided in the processing chamber, and the electrode bars of the array antenna unit are connected to the plurality of connectors.

  Then, the substrate transport carriage for holding the substrate to be processed is transported into the processing chamber whose pressure is reduced to a vacuum state, and the reaction gas is introduced into the vacuum chamber with the substrate facing the array antenna unit. While supplying, high-frequency power is supplied to the electrode rod. As a result, plasma is generated in a vacuum atmosphere, components of the reaction gas decomposed by the plasma adhere to the surface of the substrate, and a thin film such as an amorphous silicon film or a microcrystalline silicon film is generated on the substrate surface. It becomes.

JP 2007-262541 A JP 2003-86581 A JP 2003-109798 A

  In the antenna type plasma processing apparatus, the plasma density on the base end side of each electrode rod tends to be higher than the plasma density on the tip end side of each electrode rod in the vacuum chamber. Therefore, as described above, when all the electrode rods are suspended and supported on the ceiling portion of the vacuum chamber, the plasma density in the vicinity of the ceiling portion becomes extremely high, and it becomes impossible to perform uniform processing on the processing target. In addition, there is a possibility that the plasma processing is partially excessive and the quality of the processing target is deteriorated.

  An object of the present invention is to provide a plasma processing apparatus capable of improving the uniformity of plasma processing performed on a processing target and preventing excessive plasma processing.

In order to solve the above problems, a plasma processing apparatus of the present invention includes a vacuum chamber in which a reaction gas is supplied from a gas supply source to a processing chamber that can be decompressed to a vacuum state, and a power supply of an AC power source provided in the vacuum chamber. power feeding side electrode rod base end side is connected, oppositely disposed ground electrode rods to said power supply side electrode rod with the proximal end to the ground side of the front Symbol AC power is connected, the power feeding side electrode rod and the a connecting member for connecting the energizable the distal ends of the ground-side electrode rod, and a plurality of the antenna for generating plasma in the processing chamber by the power supply from the AC power source, the plurality of antenna bodies A first antenna body having base ends of the power supply side electrode rod and the ground side electrode rod provided on a predetermined first surface of the vacuum chamber; and a power supply on a second surface opposite to the first surface. Side electrode rod and ground side electrode A second antenna body provided with a base end of the first antenna body, and a power feeding side electrode rod and a ground side electrode rod constituting the first antenna body, and a power feeding side electrode rod and a ground side constituting the second antenna body. The electrode rods are arranged on the same plane, and a gas supply path through which the reaction gas supplied from the gas supply source flows is formed inside the ground side electrode rod, and the gas The reactive gas that has passed through the supply path is supplied to the vacuum chamber through an ejection hole formed in the ground electrode bar.

  Further, the plasma processing apparatus of the present invention includes a power feeding side electrode rod and a ground side electrode rod constituting the first antenna body, and a power feeding side electrode rod and a ground side electrode rod constituting the second antenna body. The electrodes are alternately provided in a direction perpendicular to the longitudinal direction of the electrode rod.

  In the plasma processing apparatus of the present invention, the electrode rods constituting the first antenna body and the electrode rods constituting the second antenna body are arranged to face each other along the axis on a straight line. And

  ADVANTAGE OF THE INVENTION According to this invention, while improving the uniformity of the plasma process performed to a process target, it can prevent performing a plasma process excessively.

(A) is sectional drawing of the front side of a vacuum chamber, (b) is the I (b) -I (b) sectional view taken on the line in (a). It is a figure which shows the connection relation of a 1st connector and a 2nd connector, and a high frequency power supply. It is a fragmentary sectional view of the 1st electrode bar and the 2nd electrode bar. It is a figure explaining plasma processing. It is a figure which shows the plasma processing apparatus of a modification.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The dimensions, materials, and other specific numerical values shown in the embodiments are merely examples for facilitating the understanding of the invention, and do not limit the present invention unless otherwise specified. In the present specification and drawings, elements having substantially the same function and configuration are denoted by the same reference numerals, and redundant description is omitted, and elements not directly related to the present invention are not illustrated. To do.

  The plasma processing apparatus of the present embodiment can be used as a plasma CVD apparatus that generates a thin film on a processing target surface or a plasma etching apparatus that etches a processing target surface. A case where the plasma processing apparatus is used as a plasma CVD apparatus will be described.

  1A is a cross-sectional view of the front side of the vacuum chamber, and FIG. 1B is a cross-sectional view taken along line I (b) -I (b) in FIG. The vacuum chamber 1 includes a housing 2. The housing 2 constitutes a ceiling portion 2a constituting the upper surface of the vacuum chamber 1 and a side surface of the vacuum chamber 1, and a left side surface portion 2b (first surface) and a right side surface portion 2c (second Surface) and a front part 2d and a back part 2e constituting the front and back of the vacuum chamber 1, and the processing chamber 3 is surrounded by these parts. However, a bottom opening 2f is formed in the lower part of the housing 2, and the processing chamber 3 is configured to face the opening downward.

  Further, below the vacuum chamber 1, a transfer chamber 100 for transferring the workpiece W to be processed is provided. The transfer chamber 100 is for transferring the transfer carriage 101 on which the workpiece W is placed. The transfer carriage 101 is guided by the guide rail 102 and is transferred to the lower part of the vacuum chamber 1.

  The vacuum chamber 1 and the transfer chamber 100 are connected via a bottom opening 2 f of the vacuum chamber 1. A gate valve 103 is provided at the connection between the chambers 1 and 100 so that the chamber can be opened and closed. When the gate valve 103 is in the open state, the chambers 1 and 100 communicate with each other, and the gate valve 103 is illustrated. Thus, in the closed state, the communication between both chambers 1 and 100 is blocked. As described above, when the gate valve 103 is closed, the processing chamber 3 provided in the vacuum chamber 1 is completely sealed from the outside. Accordingly, when the vacuum pump 4 connected to the vacuum chamber 1 is driven, the processing chamber 3 is decompressed and maintained in a vacuum state.

  The transfer chamber 100 is provided with an elevating device 104 that raises and lowers the transfer carriage 101, and the workpiece W transferred to the lower side of the vacuum chamber 1 is raised together with the transfer carriage 101 by the elevating device 104. To do. On the other hand, the vacuum chamber 1 is provided with a workpiece holding device 5, and the workpiece W carried into the processing chamber 3 from the bottom opening 2 f is held at a predetermined processing position by the workpiece holding device 5. It will be.

  A plurality of first connectors 6 (power feeding side connectors) and a plurality of second connectors 7 (grounding side connectors) are provided on the left side surface portion 2b and the right side surface portion 2c of the vacuum chamber 1, respectively. One end (base end) of the first electrode rod 8 (power feeding side electrode rod) is connected, and one end (base end) of the second electrode rod 9 (ground side electrode rod) is connected to the second connector 7. . The first connector 6 and the second connector 7 are arranged in a straight line on the both side surfaces 2b and 2c while maintaining a predetermined distance in the vertical direction (up and down in the figure), and provided on the left side 2b. The two connectors 6 and 7 and the two connectors 6 and 7 provided on the right side surface portion 2c are arranged on the same plane.

  However, both the connectors 6 and 7 provided on the left side surface portion 2b and the both connectors 6 and 7 provided on the right side surface portion 2c are arranged on the same plane with their phases shifted in the vertical direction. At this time, both the connectors 6 and 7 include a first electrode rod 8 connected to the first connector 6 and a second electrode rod 9 connected to the second connector 7 as shown in the drawing. , 9 are arranged alternately and at regular intervals in a direction (vertical direction) perpendicular to the longitudinal direction.

  Both electrode rods 8 and 9 are connected at their tips so as to be energized by a connecting member 10, and one antenna body A is constituted by the first electrode rod 8, the second electrode rod 9 and the connecting member 10. Has been. Then, assuming that the antenna body A supported by the left side surface portion 2b is the first antenna body A1, and the antenna body A supported by the right side surface portion 2c is the second antenna body A2, the first antenna body A1 and the second antenna body A2 are used. Are alternately arranged in the vertical direction.

  FIG. 2 is a diagram showing a connection relationship between the first connector 6 and the second connector 7 and the high-frequency power source 21. 2A is a view taken in the direction of arrow II (a) in FIG. 1A, and FIG. 2B is a view taken in the direction of arrow II (b) in FIG. As shown in this figure, the first connector 6 is connected to the supply side (feeding side) of the high-frequency power source 21 that supplies high-frequency power (85 MHz AC power in this embodiment), and the second connector 7 is connected to the high-frequency power source. 21 is connected to the ground side. In addition, a gas supply source 22 is connected to the second connector 7, and a reaction gas supplied from the gas supply source 22 is transferred from the second electrode rod 9 connected to the second connector 7 into the processing chamber 3. It is possible to erupt.

  FIG. 3 is a partial cross-sectional view of the first electrode rod 8 and the second electrode rod 9. A first antenna-side connector 12 that can be connected to the first connector 6 provided on the left side surface portion 2b and the right side surface portion 2c of the vacuum chamber 1 is fixed to the base end portion of the first electrode rod 8. A second antenna-side connector 13 that can be connected to the second connector 7 provided on the left side 2b and the right side 2c of the vacuum chamber 1 is fixed to the base end of the second electrode rod 9.

  The first antenna-side connector 12 includes a cylindrical main body 12a, and is fixed to the bottom surface portion 12b of the main body 12a with the first electrode rod 8 penetrating therethrough. The second antenna-side connector 13 also includes a cylindrical main body 13a, and is fixed to the bottom surface portion 13b of the main body 13a with the second electrode rod 9 penetrating therethrough.

  The first electrode rod 8 includes a covering member 14 made of a dielectric material such as ceramic or resin on the outer periphery thereof. On the other hand, the second electrode rod 9 has a cylindrical shape, and a gas supply path 9a extending in the longitudinal direction is formed inside. The second electrode rod 9 is provided with an ejection hole 9b that communicates vertically with the gas supply path 9a. As described above, when the second electrode rod 9 is supported in the processing chamber 3, it is connected to the second connector 7 so that the gas supply source 22 and the gas supply path 9a communicate with each other. I am doing. Accordingly, when the reaction gas is supplied from the gas supply source 22 while the second electrode rod 9 is supported in the processing chamber 3, the reaction gas is ejected from the ejection hole 9 b toward the processing chamber 3. Become.

  FIG. 4 is a view for explaining plasma processing by the plasma processing apparatus of the present embodiment. First, the processing chamber 3 of the vacuum chamber 1 is sealed, and the vacuum pump 4 is driven to depressurize the processing chamber 3 to a vacuum state. In this state, in the transfer chamber 100 in which the inside is maintained in a vacuum state, the transfer carriage 101 on which the workpiece W is placed is transferred to the lower side of the vacuum chamber 1. Then, the gate valve 103 is opened to allow the chambers 1 and 100 to communicate with each other, and the lifting / lowering device 104 is driven to raise the transport carriage 101 to carry the workpiece W into the processing chamber 3.

  Thereafter, as shown in the figure, the workpiece W is held in the processing chamber 3 by the workpiece holding device 5 and the gate valve 103 is closed to shut off the communication between the vacuum chamber 1 and the transfer chamber 100 and to seal the processing chamber 3. To do. In the present embodiment, the workpiece W to be processed is configured in a thin plate shape, and in a state where the workpiece W is held in the processing chamber 3 by the workpiece holding device 5, the first antenna body A1 and the second antenna body. A2 is arranged to face the processing surface W1 of the workpiece W.

  In this state, the reactive gas is supplied from the gas supply source 22 to the second electrode rod 9 to eject the reactive gas into the vacuum chamber 1 from the ejection hole 9b, and the high frequency power supply 21 causes the antenna bodies A1 and A2 to have high frequency. Supply power. As a result, plasma is generated around both antenna bodies A1, A2, that is, both electrode rods 8, 9, and the components of the reaction gas decomposed by the plasma adhere to the surface W1 of the workpiece W. In this way, a thin film such as an amorphous silicon film or a microcrystalline silicon film is formed on the surface to be processed W1.

  According to this embodiment, the antenna body A, that is, the first electrode rod 8 and the second electrode rod 9 are supported on the left side surface portion 2b and the right side surface portion 2c facing each other. More specifically, the base ends of the first electrode rods 8 that increase the plasma density are alternately provided on the left side surface portion 2b and the right side surface portion 2c. At this time, in the antenna body A1, the base ends of the first electrode rod 8 and the second electrode rod 9 are supported by the left side surface portion 2b, the tips are located in the vicinity of the right side surface portion 2c, and the antenna body A2 The base ends of the first electrode rod 8 and the second electrode rod 9 are supported by the right side surface portion 2c, and the distal ends are located in the vicinity of the left side surface portion 2b. As a result, the plasma density does not increase locally, and it is possible to prevent the thin film from becoming excessively thick, thereby improving the uniformity of the film thickness as a whole.

  In the above-described embodiment, the case where a thin film is generated on the surface to be processed W1 has been described. However, the same effect as described above can be realized when etching is performed on the surface to be processed W1. it can.

  In the above embodiment, the first antenna body A1 and the second antenna body A2 are provided with their phases shifted in the vertical direction, but the antenna bodies are the antenna bodies A3 and A4 of the modification shown in FIG. You may comprise as follows. According to this modification, the first electrode rod 28 and the second electrode rod 29 constituting the first antenna body A3, and the first electrode rod 28 and the second electrode constituting the second antenna body A4, as in the above embodiment. The two electrode rods 29 are aligned on the same plane.

  At this time, the first electrode rod 28 constituting the first antenna body A3 and the first electrode rod 28 constituting the second antenna body A4 are arranged to face each other along the axis on a straight line. The second electrode rod 29 constituting the first antenna body A3 and the second electrode rod 29 constituting the second antenna body A4 are arranged to face each other along the axis on a straight line. As described above, the same effect as described above can be realized also by the antenna body A of the modified example.

  In this modification, the first electrode rod 28 constituting the first antenna body A3 and the second electrode rod 29 constituting the second antenna body A4 are arranged opposite to each other along the axis on a straight line. The second electrode rod 29 constituting the first antenna body A3 and the first electrode rod 28 constituting the second antenna body A4 may be arranged to face each other along the axis on a straight line.

  Moreover, in the said embodiment and modification, both electrode bar | burr 8 (28), 9 (29) which comprises 1st antenna body A1 (A3), and 2nd electrode bar | burr which comprises 2nd antenna body A2 (A4) Although 8 (28) and 9 (29) are located on the same plane, both electrode rods 8 (28) and 9 (29) do not necessarily have to be located on the same plane. . Moreover, in the said embodiment, the vacuum chamber 1 is comprised by the rectangular shape, and both antenna bodies A1 (A3) and A2 (A4) are supported by the left side part 2b and the right side part 2c which face the horizontal direction. However, the vacuum chamber 1 is not limited to the rectangular shape, and may be, for example, a cylindrical shape, or may support both antenna bodies on two facing portions facing each other in the vertical direction. . In any case, the shape and configuration of each member and the like are not particularly limited as long as the first antenna body and the second antenna body are provided in a portion facing each other in the vacuum chamber.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to this embodiment. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Is done.

  The present invention can be used in a plasma processing apparatus that generates plasma in a vacuum chamber and performs plasma processing on a surface to be processed.

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 3 Processing chamber 5 Work holding apparatus 8 1st electrode rod 9 2nd electrode rod 10 Connection member 21 High frequency power supply 22 Gas supply source A Antenna body A1, A3 1st antenna body A2, A4 2nd antenna body W Work W1 Surface to be processed

Claims (3)

A vacuum chamber in which a reaction gas is supplied from a gas supply source to a processing chamber that can be decompressed to a vacuum state;
Wherein provided in the vacuum chamber, the feeding-side electrode rod proximal to the power supply side of the AC power source is connected, grounding the base to the ground side of the front Symbol AC power supply is arranged opposite to the feeding side electrode rod is connected side electrode rod, a connecting member of the tips of the power feeding side electrode rod and the ground-side electrode rod is connected in a current, a plurality of the antenna for generating plasma in the processing chamber by the power supply from the AC power source And comprising
The plurality of antenna bodies are:
A first antenna body provided with base ends of the power supply side electrode rod and the ground side electrode rod on a predetermined first surface of the vacuum chamber; and a power supply side on a second surface opposite to the first surface. A second antenna body provided with base ends of the electrode rod and the ground electrode rod,
The power feeding side electrode rod and the ground side electrode rod constituting the first antenna body, and the power feeding side electrode rod and the ground side electrode rod constituting the second antenna body are arranged in alignment on the same plane,
A gas supply path through which the reaction gas supplied from the gas supply source circulates is formed inside the ground side electrode bar, and the reaction gas that has passed through the gas supply path passes through the ground side electrode bar. A plasma processing apparatus, wherein the plasma processing apparatus is supplied to the vacuum chamber through a formed ejection hole.   The feeding-side electrode rod and grounding-side electrode rod constituting the first antenna body and the feeding-side electrode rod and grounding-side electrode rod constituting the second antenna body are orthogonal to the longitudinal direction of these two electrode rods. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is provided alternately in the direction.   2. The plasma according to claim 1, wherein the electrode rod constituting the first antenna body and the electrode rod constituting the second antenna body are arranged to face each other along an axis on a straight line. Processing equipment.

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