JP5925634B2 - 半導体の欠陥評価方法 - Google Patents

半導体の欠陥評価方法 Download PDF

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JP5925634B2
JP5925634B2 JP2012175508A JP2012175508A JP5925634B2 JP 5925634 B2 JP5925634 B2 JP 5925634B2 JP 2012175508 A JP2012175508 A JP 2012175508A JP 2012175508 A JP2012175508 A JP 2012175508A JP 5925634 B2 JP5925634 B2 JP 5925634B2
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wavelength
irradiation light
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JP2013058742A5 (https=
JP2013058742A (ja
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将志 津吹
将志 津吹
了介 渡邊
了介 渡邊
卓之 井上
卓之 井上
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Semiconductor Energy Laboratory Co Ltd
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  • Investigating Or Analysing Materials By Optical Means (AREA)
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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2012175508A 2011-08-18 2012-08-08 半導体の欠陥評価方法 Expired - Fee Related JP5925634B2 (ja)

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JP2012175508A JP5925634B2 (ja) 2011-08-18 2012-08-08 半導体の欠陥評価方法

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JP2011178824 2011-08-18
JP2011178824 2011-08-18
JP2012175508A JP5925634B2 (ja) 2011-08-18 2012-08-08 半導体の欠陥評価方法

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JP2013058742A JP2013058742A (ja) 2013-03-28
JP2013058742A5 JP2013058742A5 (https=) 2015-07-02
JP5925634B2 true JP5925634B2 (ja) 2016-05-25

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EP2880690B1 (en) * 2012-08-03 2019-02-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device with oxide semiconductor stacked film
CN110325478B (zh) * 2017-04-27 2022-03-01 株式会社东芝 纳米金属化合物粒子及使用了其的涂料及膜、膜的制造方法、纳米金属化合物粒子的制造方法
CN111855705B (zh) * 2020-07-28 2023-03-28 哈尔滨工业大学 电子器件中氧化物层辐射诱导缺陷的检测方法

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JPH11317538A (ja) * 1998-02-17 1999-11-16 Canon Inc 光導電性薄膜および光起電力素子
JP4363368B2 (ja) * 2005-06-13 2009-11-11 住友電気工業株式会社 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法

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