JP2013058742A5 - - Google Patents
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- JP2013058742A5 JP2013058742A5 JP2012175508A JP2012175508A JP2013058742A5 JP 2013058742 A5 JP2013058742 A5 JP 2013058742A5 JP 2012175508 A JP2012175508 A JP 2012175508A JP 2012175508 A JP2012175508 A JP 2012175508A JP 2013058742 A5 JP2013058742 A5 JP 2013058742A5
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- semiconductor
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- 239000004065 semiconductor Substances 0.000 claims 16
- 230000007547 defect Effects 0.000 claims 4
- 238000011156 evaluation Methods 0.000 claims 4
- 238000010521 absorption reaction Methods 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 claims 1
- 238000004611 spectroscopical analysis Methods 0.000 claims 1
- 238000002834 transmittance Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012175508A JP5925634B2 (ja) | 2011-08-18 | 2012-08-08 | 半導体の欠陥評価方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011178824 | 2011-08-18 | ||
| JP2011178824 | 2011-08-18 | ||
| JP2012175508A JP5925634B2 (ja) | 2011-08-18 | 2012-08-08 | 半導体の欠陥評価方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013058742A JP2013058742A (ja) | 2013-03-28 |
| JP2013058742A5 true JP2013058742A5 (https=) | 2015-07-02 |
| JP5925634B2 JP5925634B2 (ja) | 2016-05-25 |
Family
ID=48134308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012175508A Expired - Fee Related JP5925634B2 (ja) | 2011-08-18 | 2012-08-08 | 半導体の欠陥評価方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5925634B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2880690B1 (en) * | 2012-08-03 | 2019-02-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device with oxide semiconductor stacked film |
| CN110325478B (zh) * | 2017-04-27 | 2022-03-01 | 株式会社东芝 | 纳米金属化合物粒子及使用了其的涂料及膜、膜的制造方法、纳米金属化合物粒子的制造方法 |
| CN111855705B (zh) * | 2020-07-28 | 2023-03-28 | 哈尔滨工业大学 | 电子器件中氧化物层辐射诱导缺陷的检测方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11317538A (ja) * | 1998-02-17 | 1999-11-16 | Canon Inc | 光導電性薄膜および光起電力素子 |
| JP4363368B2 (ja) * | 2005-06-13 | 2009-11-11 | 住友電気工業株式会社 | 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法 |
-
2012
- 2012-08-08 JP JP2012175508A patent/JP5925634B2/ja not_active Expired - Fee Related
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