JP2013058742A5 - - Google Patents

Download PDF

Info

Publication number
JP2013058742A5
JP2013058742A5 JP2012175508A JP2012175508A JP2013058742A5 JP 2013058742 A5 JP2013058742 A5 JP 2013058742A5 JP 2012175508 A JP2012175508 A JP 2012175508A JP 2012175508 A JP2012175508 A JP 2012175508A JP 2013058742 A5 JP2013058742 A5 JP 2013058742A5
Authority
JP
Japan
Prior art keywords
semiconductor
wavelength
irradiation light
arbitrary
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012175508A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013058742A (ja
JP5925634B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2012175508A priority Critical patent/JP5925634B2/ja
Priority claimed from JP2012175508A external-priority patent/JP5925634B2/ja
Publication of JP2013058742A publication Critical patent/JP2013058742A/ja
Publication of JP2013058742A5 publication Critical patent/JP2013058742A5/ja
Application granted granted Critical
Publication of JP5925634B2 publication Critical patent/JP5925634B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012175508A 2011-08-18 2012-08-08 半導体の欠陥評価方法 Expired - Fee Related JP5925634B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012175508A JP5925634B2 (ja) 2011-08-18 2012-08-08 半導体の欠陥評価方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011178824 2011-08-18
JP2011178824 2011-08-18
JP2012175508A JP5925634B2 (ja) 2011-08-18 2012-08-08 半導体の欠陥評価方法

Publications (3)

Publication Number Publication Date
JP2013058742A JP2013058742A (ja) 2013-03-28
JP2013058742A5 true JP2013058742A5 (https=) 2015-07-02
JP5925634B2 JP5925634B2 (ja) 2016-05-25

Family

ID=48134308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012175508A Expired - Fee Related JP5925634B2 (ja) 2011-08-18 2012-08-08 半導体の欠陥評価方法

Country Status (1)

Country Link
JP (1) JP5925634B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
EP3617151A4 (en) 2017-04-27 2021-02-17 Kabushiki Kaisha Toshiba METAL COMPOSITE NANOPARTICLE, COATING AND FILM USING THE SAME METAL COMPOSITE NANOPARTICLE PRODUCTION METHOD AND METAL COMPOSITE NANOPARTICLE MANUFACTURING METHOD
CN111855705B (zh) * 2020-07-28 2023-03-28 哈尔滨工业大学 电子器件中氧化物层辐射诱导缺陷的检测方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11317538A (ja) * 1998-02-17 1999-11-16 Canon Inc 光導電性薄膜および光起電力素子
JP4363368B2 (ja) * 2005-06-13 2009-11-11 住友電気工業株式会社 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法

Similar Documents

Publication Publication Date Title
Islam et al. In‐plane and out‐of‐plane optical properties of monolayer, few‐layer, and thin‐film MoS2 from 190 to 1700 nm and their application in photonic device design
Lim et al. Elucidating the long-range charge carrier mobility in metal halide perovskite thin films
Yang et al. Top and bottom surfaces limit carrier lifetime in lead iodide perovskite films
Chae et al. Excitonic fano resonance in free-standing graphene
Jo et al. Highly Efficient Infrared Photodetection in a Gate‐Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment
Ben-Moshe et al. Probing the interaction of quantum dots with chiral capping molecules using circular dichroism spectroscopy
Barugkin et al. Ultralow absorption coefficient and temperature dependence of radiative recombination of CH3NH3PbI3 perovskite from photoluminescence
Bercegol et al. Quantitative optical assessment of photonic and electronic properties in halide perovskite
Nam et al. A digital SERS sensing platform using 3D nanolaminate plasmonic crystals coupled with Au nanoparticles for accurate quantitative detection of dopamine
TR201903671T4 (tr) Bir taşıyıcı plaka üzerinde düzenlenen en az bir aşınma katmanının abrazyon dayanımının belirlenmesine yönelik yöntem.
JP2015130477A5 (ja) 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法、並びに上記評価方法に用いられる評価装置
JP2011249621A (ja) 薄膜付ウェーハの評価方法
JP2010002328A5 (https=)
CN103649730A (zh) 溴酸根离子的测定方法和测定装置
Van Velson et al. Thickness-dependent Raman scattering from thin-film systems
JP2013058742A5 (https=)
Dong et al. Microscale spectroscopic mapping of 2d optical materials
JP2015158439A5 (https=)
Javed et al. Modified optical characteristics of TiO2/Au/TiO2 thin composite films
Kaushik et al. Localized surface plasmon resonance-enhanced solar-blind Al0. 4Ga0. 6N MSM photodetectors exhibiting high-temperature robustness
JP2005257676A5 (https=)
Zhong Raman scattering study on pristine and oxidized n-type porous silicon
Qiu et al. Simulating and implementing broadband van der Waals artificial visual synapses based on photoconductivity and pyroconductivity mechanisms
JP2011249787A5 (https=)
Rudigier et al. Determination of the quality of CuInS2-based solar cells combining Raman and photoluminescence spectroscopy