JP5886663B2 - 電子線応用装置およびレンズアレイ - Google Patents

電子線応用装置およびレンズアレイ Download PDF

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Publication number
JP5886663B2
JP5886663B2 JP2012063816A JP2012063816A JP5886663B2 JP 5886663 B2 JP5886663 B2 JP 5886663B2 JP 2012063816 A JP2012063816 A JP 2012063816A JP 2012063816 A JP2012063816 A JP 2012063816A JP 5886663 B2 JP5886663 B2 JP 5886663B2
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Prior art keywords
electrode
lens array
electron beam
lens
voltage
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JP2012063816A
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Japanese (ja)
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JP2013196951A5 (enExample
JP2013196951A (ja
Inventor
谷本　明佳
明佳 谷本
太田　洋也
洋也 太田
慎 榊原
慎 榊原
百代 圓山
百代 圓山
谷本　憲史
憲史 谷本
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2012063816A priority Critical patent/JP5886663B2/ja
Priority to US13/733,955 priority patent/US20130248731A1/en
Publication of JP2013196951A publication Critical patent/JP2013196951A/ja
Publication of JP2013196951A5 publication Critical patent/JP2013196951A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/121—Lenses electrostatic characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)
JP2012063816A 2012-03-21 2012-03-21 電子線応用装置およびレンズアレイ Active JP5886663B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012063816A JP5886663B2 (ja) 2012-03-21 2012-03-21 電子線応用装置およびレンズアレイ
US13/733,955 US20130248731A1 (en) 2012-03-21 2013-01-04 Electron beam apparatus and lens array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012063816A JP5886663B2 (ja) 2012-03-21 2012-03-21 電子線応用装置およびレンズアレイ

Publications (3)

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JP2013196951A JP2013196951A (ja) 2013-09-30
JP2013196951A5 JP2013196951A5 (enExample) 2014-11-27
JP5886663B2 true JP5886663B2 (ja) 2016-03-16

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JP2012063816A Active JP5886663B2 (ja) 2012-03-21 2012-03-21 電子線応用装置およびレンズアレイ

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US (1) US20130248731A1 (enExample)
JP (1) JP5886663B2 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US10832886B2 (en) 2018-03-19 2020-11-10 Hitachi High-Tech Corporation Beam irradiation device

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101051370B1 (ko) * 2003-09-05 2011-07-22 어플라이드 머티리얼즈 이스라엘 리미티드 입자광 시스템 및 장치와 이와 같은 시스템 및 장치용입자광 부품
JP2012195096A (ja) * 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
US9159528B2 (en) * 2013-06-07 2015-10-13 Samsung Electronics Co., Ltd. Electron beam apparatus
US9390891B2 (en) 2014-08-15 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for charged particle lithography system
DE102015202172B4 (de) * 2015-02-06 2017-01-19 Carl Zeiss Microscopy Gmbh Teilchenstrahlsystem und Verfahren zur teilchenoptischen Untersuchung eines Objekts
US9691588B2 (en) 2015-03-10 2017-06-27 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
US9607805B2 (en) * 2015-05-12 2017-03-28 Hermes Microvision Inc. Apparatus of plural charged-particle beams
US9922799B2 (en) * 2015-07-21 2018-03-20 Hermes Microvision, Inc. Apparatus of plural charged-particle beams
KR102422784B1 (ko) 2015-08-03 2022-07-19 엘지이노텍 주식회사 광파 탐지 및 거리 측정 장치
SG10201912510QA (en) * 2015-09-23 2020-02-27 Kla Tencor Corp Method and system for focus adjustment a multi-beam scanning electron microscopy system
US11302511B2 (en) * 2016-02-04 2022-04-12 Kla Corporation Field curvature correction for multi-beam inspection systems
US10497536B2 (en) * 2016-09-08 2019-12-03 Rockwell Collins, Inc. Apparatus and method for correcting arrayed astigmatism in a multi-column scanning electron microscopy system
US9922796B1 (en) * 2016-12-01 2018-03-20 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
US10176965B1 (en) * 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
JP2020181629A (ja) * 2017-07-27 2020-11-05 株式会社日立ハイテク 電子線観察装置、電子線観察システム及び電子線観察装置の制御方法
US10504683B2 (en) * 2018-02-22 2019-12-10 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Device and method for forming a plurality of charged particle beamlets
JP7181305B2 (ja) 2018-03-09 2022-11-30 エーエスエムエル ネザーランズ ビー．ブイ． 信号電子検出性能を向上させたマルチビーム検査装置
JP7198092B2 (ja) * 2018-05-18 2022-12-28 株式会社ニューフレアテクノロジー マルチ電子ビーム照射装置、マルチ電子ビーム検査装置及びマルチ電子ビーム照射方法
WO2020030483A1 (en) 2018-08-09 2020-02-13 Asml Netherlands B.V. An apparatus for multiple charged-particle beams
US11373838B2 (en) * 2018-10-17 2022-06-28 Kla Corporation Multi-beam electron characterization tool with telecentric illumination
US10784070B2 (en) * 2018-10-19 2020-09-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, field curvature corrector, and methods of operating a charged particle beam device
TWI743626B (zh) 2019-01-24 2021-10-21 德商卡爾蔡司多重掃描電子顯微鏡有限公司 包含多束粒子顯微鏡的系統、對3d樣本逐層成像之方法及電腦程式產品
EP3828914A1 (en) * 2019-02-27 2021-06-02 FEI Company Charged particle beam device for inspection of a specimen with a plurality of charged particle beamlets
JP7175798B2 (ja) * 2019-03-01 2022-11-21 株式会社荏原製作所 荷電粒子マルチビーム装置
TWI737117B (zh) * 2019-03-05 2021-08-21 日商紐富來科技股份有限公司 多電子束照射裝置
JP7241570B2 (ja) * 2019-03-06 2023-03-17 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置及びマルチ電子ビーム検査方法
JP7303052B2 (ja) * 2019-07-16 2023-07-04 株式会社ニューフレアテクノロジー 多極子収差補正器の導通検査方法及び多極子収差補正器の導通検査装置
US10923313B1 (en) * 2019-10-17 2021-02-16 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method of operating a charged particle beam device
EP3872836A1 (en) 2020-02-28 2021-09-01 ASML Netherlands B.V. Electrostatic lens designs
JP7305826B2 (ja) * 2020-06-17 2023-07-10 エーエスエムエル ネザーランズ ビー．ブイ． 複数荷電粒子ビームの装置
IL302654A (en) * 2020-11-12 2023-07-01 Asml Netherlands Bv Assembling an objective lens array, electronic-optical system, electronic-optical system array, focusing method
EP4002421A1 (en) * 2020-11-12 2022-05-25 ASML Netherlands B.V. Objective lens array assembly, electron-optical system, electron-optical system array, method of focusing
WO2022135842A1 (en) * 2020-12-22 2022-06-30 Asml Netherlands B.V. Electron optical column and method for directing a beam of primary electrons onto a sample
US11495433B1 (en) * 2021-04-15 2022-11-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam apparatus, multi-beamlet assembly, and method of inspecting a specimen
EP4423789A1 (en) * 2021-10-25 2024-09-04 Carl Zeiss MultiSEM GmbH Method of global and local optimization of imaging resolution in a multibeam system
KR20240118101A (ko) * 2021-12-23 2024-08-02 에이에스엠엘 네델란즈 비.브이. 전자-광학 디바이스, 서브 빔의 특성 변화를 보상하는 방법
CN119013754A (zh) * 2022-04-12 2024-11-22 华为技术有限公司 用于减小散焦距离defocus的静电透镜
WO2024156469A1 (en) * 2023-01-25 2024-08-02 Carl Zeiss Multisem Gmbh Multi-beam particle microscope with improved multi-beam generator for field curvature correction and multi-beam generator
CN116435163A (zh) * 2023-06-12 2023-07-14 广东省科学院半导体研究所 多电子束场曲校正模块及电子束光柱体

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3647136B2 (ja) * 1996-04-23 2005-05-11 キヤノン株式会社 電子ビーム露光装置
JP3694669B2 (ja) * 2001-12-20 2005-09-14 株式会社日立ハイテクノロジーズ 電子ビーム描画装置
JP4252813B2 (ja) * 2003-01-30 2009-04-08 キヤノン株式会社 荷電ビーム用レンズ、荷電ビーム露光装置及びデバイス製造方法
KR101051370B1 (ko) * 2003-09-05 2011-07-22 어플라이드 머티리얼즈 이스라엘 리미티드 입자광 시스템 및 장치와 이와 같은 시스템 및 장치용입자광 부품
JP5159035B2 (ja) * 2005-10-28 2013-03-06 キヤノン株式会社 レンズアレイ及び該レンズアレイを含む荷電粒子線露光装置
JP4878501B2 (ja) * 2006-05-25 2012-02-15 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
WO2011034428A1 (en) * 2009-09-18 2011-03-24 Mapper Lithography Ip B.V. Charged particle optical system with multiple beams

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10832886B2 (en) 2018-03-19 2020-11-10 Hitachi High-Tech Corporation Beam irradiation device
US11239042B2 (en) 2018-03-19 2022-02-01 Hitachi High-Tech Corporation Beam irradiation device
DE102019202838B4 (de) 2018-03-19 2023-02-02 Hitachi High-Tech Corporation Strahlbestrahlungsvorrichtung

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US20130248731A1 (en) 2013-09-26
JP2013196951A (ja) 2013-09-30

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