JP5886473B2 - Ｔｉ−Ａｌ合金スパッタリングターゲット - Google Patents

Ｔｉ−Ａｌ合金スパッタリングターゲット Download PDF

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Publication number
JP5886473B2
JP5886473B2 JP2015506764A JP2015506764A JP5886473B2 JP 5886473 B2 JP5886473 B2 JP 5886473B2 JP 2015506764 A JP2015506764 A JP 2015506764A JP 2015506764 A JP2015506764 A JP 2015506764A JP 5886473 B2 JP5886473 B2 JP 5886473B2
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JP
Japan
Prior art keywords
alloy
target
sputtering
less
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015506764A
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English (en)
Japanese (ja)
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JPWO2014148424A1 (ja
Inventor
健太郎 原田
健太郎 原田
孝幸 浅野
孝幸 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
JX Nippon Mining and Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JX Nippon Mining and Metals Corp filed Critical JX Nippon Mining and Metals Corp
Priority to JP2015506764A priority Critical patent/JP5886473B2/ja
Application granted granted Critical
Publication of JP5886473B2 publication Critical patent/JP5886473B2/ja
Publication of JPWO2014148424A1 publication Critical patent/JPWO2014148424A1/ja
Active legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C22C1/0458—Alloys based on titanium, zirconium or hafnium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Powder Metallurgy (AREA)
JP2015506764A 2013-03-19 2014-03-17 Ｔｉ−Ａｌ合金スパッタリングターゲット Active JP5886473B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015506764A JP5886473B2 (ja) 2013-03-19 2014-03-17 Ｔｉ−Ａｌ合金スパッタリングターゲット

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013056941 2013-03-19
JP2013056941 2013-03-19
PCT/JP2014/057113 WO2014148424A1 (ja) 2013-03-19 2014-03-17 Ｔｉ－Ａｌ合金スパッタリングターゲット
JP2015506764A JP5886473B2 (ja) 2013-03-19 2014-03-17 Ｔｉ−Ａｌ合金スパッタリングターゲット

Publications (2)

Publication Number Publication Date
JP5886473B2 true JP5886473B2 (ja) 2016-03-16
JPWO2014148424A1 JPWO2014148424A1 (ja) 2017-02-16

Family

ID=51580103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015506764A Active JP5886473B2 (ja) 2013-03-19 2014-03-17 Ｔｉ−Ａｌ合金スパッタリングターゲット

Country Status (3)

Country Link
JP (1) JP5886473B2 (zh)
TW (1) TWI519648B (zh)
WO (1) WO2014148424A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114277336A (zh) * 2020-09-28 2022-04-05 上海交通大学 基于Al3Ti纳米针垂直排列的Al基合金薄膜及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108220700B (zh) * 2018-01-17 2020-06-30 长沙迅洋新材料科技有限公司 一种铝钛铌三元合金靶材及其制备方法
CN111299613A (zh) * 2020-03-27 2020-06-19 宁波江丰电子材料股份有限公司 一种钛铝合金靶材的机加工方法及其产品和用途

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11335826A (ja) * 1998-05-27 1999-12-07 Ryoka Matthey Kk Ａｌ合金製スパッタリングターゲット材の製造方法
JP2000273623A (ja) * 1999-03-29 2000-10-03 Japan Energy Corp Ｔｉ−Ａｌ合金スパッタリングターゲット
JP2001011609A (ja) * 1999-06-24 2001-01-16 Honeywell Electronics Japan Kk スパッタリングターゲット及びその製造方法
JP2003201560A (ja) * 2002-01-11 2003-07-18 Toshiba Corp スパッタリングターゲットおよびその製造方法
JP2011179123A (ja) * 2011-04-04 2011-09-15 Toshiba Corp スパッタリングターゲットとそれを用いたＴｉ−Ａｌ−Ｎ膜および電子部品の製造方法
JP2012072496A (ja) * 2000-04-20 2012-04-12 Toshiba Corp スパッタターゲット

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000169959A (ja) * 1998-12-04 2000-06-20 Japan Energy Corp 光ディスク反射膜形成用スパッタリングターゲット

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11335826A (ja) * 1998-05-27 1999-12-07 Ryoka Matthey Kk Ａｌ合金製スパッタリングターゲット材の製造方法
JP2000273623A (ja) * 1999-03-29 2000-10-03 Japan Energy Corp Ｔｉ−Ａｌ合金スパッタリングターゲット
JP2001011609A (ja) * 1999-06-24 2001-01-16 Honeywell Electronics Japan Kk スパッタリングターゲット及びその製造方法
JP2012072496A (ja) * 2000-04-20 2012-04-12 Toshiba Corp スパッタターゲット
JP2003201560A (ja) * 2002-01-11 2003-07-18 Toshiba Corp スパッタリングターゲットおよびその製造方法
JP2011179123A (ja) * 2011-04-04 2011-09-15 Toshiba Corp スパッタリングターゲットとそれを用いたＴｉ−Ａｌ−Ｎ膜および電子部品の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114277336A (zh) * 2020-09-28 2022-04-05 上海交通大学 基于Al3Ti纳米针垂直排列的Al基合金薄膜及其制备方法

Also Published As

Publication number Publication date
TWI519648B (zh) 2016-02-01
JPWO2014148424A1 (ja) 2017-02-16
WO2014148424A1 (ja) 2014-09-25
TW201504448A (zh) 2015-02-01

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