JP5875420B2 - 放射線検出素子およびその製造方法 - Google Patents

放射線検出素子およびその製造方法 Download PDF

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Publication number
JP5875420B2
JP5875420B2 JP2012058773A JP2012058773A JP5875420B2 JP 5875420 B2 JP5875420 B2 JP 5875420B2 JP 2012058773 A JP2012058773 A JP 2012058773A JP 2012058773 A JP2012058773 A JP 2012058773A JP 5875420 B2 JP5875420 B2 JP 5875420B2
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JP
Japan
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convex
scintillator layer
regions
scintillator
region
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2012058773A
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English (en)
Japanese (ja)
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JP2012225909A5 (enExample
JP2012225909A (ja
Inventor
亮子 堀江
亮子 堀江
安居　伸浩
伸浩 安居
良太 大橋
良太 大橋
田　透
透 田
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Canon Inc
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Canon Inc
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Priority to JP2012058773A priority Critical patent/JP5875420B2/ja
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Publication of JP2012225909A5 publication Critical patent/JP2012225909A5/ja
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Publication of JP5875420B2 publication Critical patent/JP5875420B2/ja
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2012058773A 2011-04-07 2012-03-15 放射線検出素子およびその製造方法 Expired - Fee Related JP5875420B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012058773A JP5875420B2 (ja) 2011-04-07 2012-03-15 放射線検出素子およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011085804 2011-04-07
JP2011085804 2011-04-07
JP2012058773A JP5875420B2 (ja) 2011-04-07 2012-03-15 放射線検出素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2012225909A JP2012225909A (ja) 2012-11-15
JP2012225909A5 JP2012225909A5 (enExample) 2015-04-30
JP5875420B2 true JP5875420B2 (ja) 2016-03-02

Family

ID=46965356

Family Applications (1)

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JP2012058773A Expired - Fee Related JP5875420B2 (ja) 2011-04-07 2012-03-15 放射線検出素子およびその製造方法

Country Status (2)

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US (1) US8624194B2 (enExample)
JP (1) JP5875420B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5767512B2 (ja) * 2011-06-07 2015-08-19 キヤノン株式会社 放射線検出素子及び放射線検出器
KR102090289B1 (ko) * 2013-05-30 2020-04-16 삼성디스플레이 주식회사 산화물 스퍼터링 타겟, 이를 이용한 박막 트랜지스터 및 그 제조 방법
JP6671839B2 (ja) * 2014-10-07 2020-03-25 キヤノン株式会社 放射線撮像装置及び撮像システム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993003496A1 (en) * 1991-07-31 1993-02-18 The Regents Of The University Of California Improvements in particle detector spatial resolution
JP2721476B2 (ja) * 1993-07-07 1998-03-04 浜松ホトニクス株式会社 放射線検出素子及びその製造方法
US5368882A (en) * 1993-08-25 1994-11-29 Minnesota Mining And Manufacturing Company Process for forming a radiation detector
CA2131243A1 (en) * 1993-09-27 1995-03-28 Kenneth R. Paulson Process for forming a phosphor
EP2443656B1 (en) * 2009-06-17 2018-11-07 The Regents of the University of Michigan Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics

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Publication number Publication date
US20120256093A1 (en) 2012-10-11
US8624194B2 (en) 2014-01-07
JP2012225909A (ja) 2012-11-15

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