JP2012225909A5 - - Google Patents

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Publication number
JP2012225909A5
JP2012225909A5 JP2012058773A JP2012058773A JP2012225909A5 JP 2012225909 A5 JP2012225909 A5 JP 2012225909A5 JP 2012058773 A JP2012058773 A JP 2012058773A JP 2012058773 A JP2012058773 A JP 2012058773A JP 2012225909 A5 JP2012225909 A5 JP 2012225909A5
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JP
Japan
Prior art keywords
convex
scintillator layer
regions
adjacent
light detection
Prior art date
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Application number
JP2012058773A
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English (en)
Japanese (ja)
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JP5875420B2 (ja
JP2012225909A (ja
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Priority to JP2012058773A priority Critical patent/JP5875420B2/ja
Priority claimed from JP2012058773A external-priority patent/JP5875420B2/ja
Publication of JP2012225909A publication Critical patent/JP2012225909A/ja
Publication of JP2012225909A5 publication Critical patent/JP2012225909A5/ja
Application granted granted Critical
Publication of JP5875420B2 publication Critical patent/JP5875420B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012058773A 2011-04-07 2012-03-15 放射線検出素子およびその製造方法 Expired - Fee Related JP5875420B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012058773A JP5875420B2 (ja) 2011-04-07 2012-03-15 放射線検出素子およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011085804 2011-04-07
JP2011085804 2011-04-07
JP2012058773A JP5875420B2 (ja) 2011-04-07 2012-03-15 放射線検出素子およびその製造方法

Publications (3)

Publication Number Publication Date
JP2012225909A JP2012225909A (ja) 2012-11-15
JP2012225909A5 true JP2012225909A5 (enExample) 2015-04-30
JP5875420B2 JP5875420B2 (ja) 2016-03-02

Family

ID=46965356

Family Applications (1)

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JP2012058773A Expired - Fee Related JP5875420B2 (ja) 2011-04-07 2012-03-15 放射線検出素子およびその製造方法

Country Status (2)

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US (1) US8624194B2 (enExample)
JP (1) JP5875420B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5767512B2 (ja) * 2011-06-07 2015-08-19 キヤノン株式会社 放射線検出素子及び放射線検出器
KR102090289B1 (ko) * 2013-05-30 2020-04-16 삼성디스플레이 주식회사 산화물 스퍼터링 타겟, 이를 이용한 박막 트랜지스터 및 그 제조 방법
JP6671839B2 (ja) * 2014-10-07 2020-03-25 キヤノン株式会社 放射線撮像装置及び撮像システム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993003496A1 (en) * 1991-07-31 1993-02-18 The Regents Of The University Of California Improvements in particle detector spatial resolution
JP2721476B2 (ja) * 1993-07-07 1998-03-04 浜松ホトニクス株式会社 放射線検出素子及びその製造方法
US5368882A (en) * 1993-08-25 1994-11-29 Minnesota Mining And Manufacturing Company Process for forming a radiation detector
CA2131243A1 (en) * 1993-09-27 1995-03-28 Kenneth R. Paulson Process for forming a phosphor
EP2443656B1 (en) * 2009-06-17 2018-11-07 The Regents of the University of Michigan Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics

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