JP5858790B2 - フォトダイオードを作製するための方法 - Google Patents
フォトダイオードを作製するための方法 Download PDFInfo
- Publication number
- JP5858790B2 JP5858790B2 JP2011546916A JP2011546916A JP5858790B2 JP 5858790 B2 JP5858790 B2 JP 5858790B2 JP 2011546916 A JP2011546916 A JP 2011546916A JP 2011546916 A JP2011546916 A JP 2011546916A JP 5858790 B2 JP5858790 B2 JP 5858790B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- intermediate layer
- layers
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 40
- 239000002019 doping agent Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 230000003993 interaction Effects 0.000 claims description 12
- 239000000969 carrier Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 230000005670 electromagnetic radiation Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000925 Cd alloy Inorganic materials 0.000 claims 1
- 229910000645 Hg alloy Inorganic materials 0.000 claims 1
- 229910001215 Te alloy Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 167
- 239000002800 charge carrier Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Description
- 良好な信号雑音比を確実にするための、弱い電流の増幅および低い電子的な雑音指数(noise factor)
- アバランシェフォトダイオードを通って流れ、信号雑音比の低下の一因となる、暗電流の最小化
- アバランシェ利得の増大、および、
- バイアス電圧の低減
- 第1の下部層と第2の上部層との間に配置される中間層を備える3つの半導体層のスタックを生成するステップであって、3つの層は第1の導電型を有するステップと、
- 少なくとも中間層および第2の上部層と接触し、3つの層の平面に対して横断方向に延在する半導体領域を生成するステップであって、前記領域は、中間層とP-N接合を形成するために、第1の導電型と反対の第2の導電型を有するステップと
からなる方法に関する。
- 中間層は、第2の導電型を有する半導体材料で作製され、
- 中間層の厚さ、ならびに、第1および第2の層のドーパント濃度と、中間層のドーパント濃度とが、第1および第2の層に存在する第1の導電型のドーパントにより引き起こされる、第2の導電型から第1の導電型への、中間層の導電型の反転を得るように選択される。
- 1015cm-3から1017cm-3までの第1の導電型のドーパントの濃度、
- 0.5から2マイクロメートルまでの厚さ、および、
- 0.3から0.8までのモル比率x
を有する場合がある。
- 1014cm-3から1015cm-3までの第2の導電型のドーパントの濃度、
- 0.1から1マイクロメートルまでの厚さ、および、
- 0.1から0.5までのモル比率x、好ましくは0.2から0.3までのモル比率
を有する場合がある。
- 第1の層は、フォトキャリアを生成するために、入射光子と相互作用するように設計される相互作用層であってよく、
- 中間層は、フォトキャリア捕集層であってよく、第1および第2の層のそれぞれのバンドギャップの2倍より少ない幅であるバンドギャップを有する場合があり、
- かつ、第2の層は、捕集層にフォトキャリアを閉じ込めるように設計される閉じ込め層であってよい。
- 中間層は、フォトキャリアを生成するために、入射光子と相互作用するように設計される相互作用層、およびフォトキャリア捕集層の両方であってよく、中間層は、第1および第2の層のそれぞれのバンドギャップの幅より小さいバンドギャップを有し、かつ、
- 第1および第2の層は、捕集層にフォトキャリアを閉じ込めるように設計される閉じ込め層であってよい。
- 3つの層のスタックであって、第1の導電型を有する第1の半導体層1と第2の半導体層3との間に配置される中間層2を備えるスタックと、
- 3つの層1、2、3の平面に対して横断方向に延在し、少なくとも中間層2および第2の層3と接触し、第1の導電型と反対である導電型を有する領域4と
を備える。
- 1015cm-3から1017cm-3までの第1の導電型のドーパントの濃度、
- 0.5から2マイクロメートルまでの厚さ、および、
- 0.3から0.8までのモル比率x
を有する外因性半導体材料で作製される。
- 1014cm-3から1015cm-3までの第2の導電型のドーパントの濃度、
- 0.1から1マイクロメートルまでの厚さ、および、
- 0.1から0.5までのモル比率x、好ましくは0.2から0.3までのモル比率
を有する半導体材料で作製される。
- 中間層は、フォトキャリアを生成するために、入射光子と相互作用するように設計される相互作用層、およびフォトキャリア捕集層の両方であってよく、中間層は、第1および第2の層のそれぞれのバンドギャップの幅より小さいバンドギャップを有し、かつ、
- 第1および第2の層は、捕集層にフォトキャリアを閉じ込めるように設計される閉じ込め層であってよい。
2 中間層、層
3 第2の半導体層、第2の層、閉じ込め層、層
4 領域
5 パッシベーション層
6 接点、読み出しプロット
7 第1の反射面
8 第2の反射面
Claims (11)
- 少なくとも、
− 入射光子と相互作用して、フォトキャリアを解放するための第1の下部層と、フォトキャリアを捕集するための中間層と、前記中間層内のフォトキャリアを閉じ込めるための第2の上部層と、を備える3つの半導体層のスタックを生成するステップであって、前記第1の下部層及び前記第2の上部層は第1の導電型を有する半導体材料で作製され、前記中間層は前記第1の導電型と反対の第2の導電型を有する半導体材料で作製され、且つ前記第1の下部層と第2の上部層との間に配置されているステップと、
− 前記中間層の導電型を、前記第2の導電型から前記第1の導電型へ反転させるステップと、
− 少なくとも前記中間層および前記第2の上部層と接触し、前記3つの層の平面に対して横断方向に延在する半導体領域を生成するステップであって、前記領域は、中間層とP−N接合を形成するために、前記第2の導電型を有するステップとからなる、電磁放射の入射光子と相互作用することが可能なフォトダイオードを製造するための方法において、
− 前記中間層の厚さ、ならびに、前記第1および第2の層のドーパント濃度と、前記中間層のドーパント濃度とが、前記第1および第2の層に存在する前記第1の導電型の前記ドーパントにより引き起こされる、前記第2の導電型から前記第1の導電型への、中間層の導電型の前記反転を得るように選択される
フォトダイオードを製造するための方法。 - 中間層は、前記第1および第2の層のそれぞれの厚さより小さい厚さを有する、請求項1に記載のフォトダイオードを製造するための方法。
- 中間層は、前記第2の導電型のドーパントを含む半導体材料で作製され、中間層内の前記第2の導電型のドーパントの濃度は、前記第1および第2の層内それぞれの前記第1の導電型のドーパントの濃度より低い、請求項1に記載のフォトダイオードを製造するための方法。
- 前記スタックの前記3つの層を形成するために使用される前記半導体材料は、一般式がCdxHg1−xTeである、カドミウム、水銀およびテルルの合金であり、ただし、xは、0から1までの値であり、前記合金の組成でのカドミウムのモル比率を表す、請求項1に記載のフォトダイオードを製造するための方法。
- 前記第1および第2の層は、それぞれ、
− 1015cm−3から1017cm−3までの前記第1の導電型のドーパントの濃度、
− 0.5μmから2μmまでの厚さ、および、
− 0.3から0.8までのモル比率x
を有し、前記中間層は、
− 1014cm−3から1015cm−3までの前記第2の導電型のドーパントの濃度、
− 0.1μmから1μmまでの厚さ、および、
− 0.1から0.5までのモル比率x、好ましくは0.2から0.3までのモル比率を有する、請求項4に記載のフォトダイオードを製造するための方法。 - − 前記第1の層は、フォトキャリアを生成するために、入射光子と相互作用するように設計される相互作用層であり、
− 前記中間層は、フォトキャリア捕集層であり、前記第1および第2の層のそれぞれのバンドギャップのそれぞれより少ないバンドギャップを有し、
− かつ、前記第2の層は、前記捕集層にフォトキャリアを閉じ込めるように設計される閉じ込め層である
請求項1に記載のフォトダイオードを製造するための方法。 - − 前記中間層は、フォトキャリアを生成するために、入射光子と相互作用するように設計される相互作用層、およびフォトキャリア捕集層の両方であり、前記中間層は、前記第1および第2の層のそれぞれのバンドギャップの幅より小さいバンドギャップを有し、
− かつ、前記第1および第2の層は、前記捕集層にフォトキャリアを閉じ込めるように設計される閉じ込め層である
請求項1に記載のフォトダイオードを製造するための方法。 - 前記スタックの両側にそれぞれ配置される第1の反射面および第2の反射面により形成される光キャビティをさらに備える、請求項1に記載のフォトダイオードを製造するための方法。
- 前記第1の反射面は、金属ミラーであり、前記第2の反射面は、分布ブラッグ反射鏡である、請求項8に記載のフォトダイオードを製造するための方法。
- 前記半導体領域は、第1の相互作用層中に部分的に延在する、請求項1に記載のフォトダイオードを製造するための方法。
- 前記第2の層は、パッシベーション層により被覆される、請求項1に記載のフォトダイオードを製造するための方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0950545 | 2009-01-29 | ||
FR0950545A FR2941564B1 (fr) | 2009-01-29 | 2009-01-29 | Photodiode et detecteur de rayonnement electromagnetique |
PCT/FR2010/050112 WO2010086543A1 (fr) | 2009-01-29 | 2010-01-26 | Procede de fabrication d ' une photodiode et photodiode et detecteur de rayonnement electromagnetique correspondants |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012516559A JP2012516559A (ja) | 2012-07-19 |
JP5858790B2 true JP5858790B2 (ja) | 2016-02-10 |
Family
ID=41401549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011546916A Active JP5858790B2 (ja) | 2009-01-29 | 2010-01-26 | フォトダイオードを作製するための方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8513704B2 (ja) |
EP (1) | EP2382672B1 (ja) |
JP (1) | JP5858790B2 (ja) |
FR (1) | FR2941564B1 (ja) |
WO (1) | WO2010086543A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2747154B1 (en) * | 2012-12-21 | 2020-04-01 | ams AG | Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3886587A (en) * | 1973-07-19 | 1975-05-27 | Harris Corp | Isolated photodiode array |
JPH05175532A (ja) * | 1991-12-26 | 1993-07-13 | Nec Kansai Ltd | 光検出器及びその製造方法 |
JP2703167B2 (ja) * | 1993-08-06 | 1998-01-26 | 株式会社日立製作所 | 受光素子及びその製造方法 |
GB9322246D0 (en) * | 1993-10-28 | 1993-12-15 | Hitachi Europ Ltd | Improved metal-semiconductor-metal photodetector |
FR2879818B1 (fr) * | 2004-12-17 | 2007-04-20 | Commissariat Energie Atomique | Photodetecteur a semi-conducteur, dispositif de detection multi-spectrale d'un rayonnement electromagnetique mettant en oeuvre un tel photodetecteur, et procede de mise en oeuvre d'un tel dispositif |
FR2906082B1 (fr) * | 2006-09-18 | 2008-10-31 | Commissariat Energie Atomique | Photodiode a avalanche |
JP4746639B2 (ja) * | 2008-02-22 | 2011-08-10 | 株式会社東芝 | 半導体デバイス |
-
2009
- 2009-01-29 FR FR0950545A patent/FR2941564B1/fr not_active Expired - Fee Related
-
2010
- 2010-01-26 EP EP10707586.3A patent/EP2382672B1/fr active Active
- 2010-01-26 JP JP2011546916A patent/JP5858790B2/ja active Active
- 2010-01-26 WO PCT/FR2010/050112 patent/WO2010086543A1/fr active Application Filing
-
2011
- 2011-06-30 US US13/174,061 patent/US8513704B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2382672B1 (fr) | 2018-11-07 |
EP2382672A1 (fr) | 2011-11-02 |
FR2941564B1 (fr) | 2011-07-01 |
FR2941564A1 (fr) | 2010-07-30 |
US8513704B2 (en) | 2013-08-20 |
JP2012516559A (ja) | 2012-07-19 |
US20110260277A1 (en) | 2011-10-27 |
WO2010086543A1 (fr) | 2010-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7459730B1 (en) | Separate absorption and detection diode for VLWIR | |
KR20180008327A (ko) | 이중 대역 광검출기 및 이의 제작 방법 | |
US9013019B2 (en) | Avalanche photodiode-type semiconductor structure and process for producing such a structure | |
JP6466416B2 (ja) | 高速光検出器 | |
JP4856031B2 (ja) | アバランシェフォトダイオード | |
JP2012151452A (ja) | 裏面に設けられた金属テクスチャリングによって最適化された光検出器 | |
US8592863B2 (en) | Photodetector with internal gain and detector comprising an array of such photodetectors | |
Guo et al. | High-responsivity Si photodiodes at 1060 nm in standard CMOS technology | |
US20140217540A1 (en) | Fully depleted diode passivation active passivation architecture | |
US9406831B2 (en) | Avalanche photodiode semiconductor structure having a high signal-to-noise ratio and method for manufacturing such a photodiode | |
RU2488916C1 (ru) | Полупроводниковый приемник инфракрасного излучения | |
JP5858790B2 (ja) | フォトダイオードを作製するための方法 | |
CN101894876B (zh) | 量子级联探测器结构 | |
JP3047385B2 (ja) | 受光素子 | |
Liu et al. | Internal emission metal‐semiconductor‐metal photodetectors on Si and GaAs for 1.3 μm detection | |
US10608040B2 (en) | Photodetection device which has an inter-diode array and is overdoped by metal diffusion and manufacturing method | |
JP4138853B2 (ja) | 赤外線センサic | |
US7619240B2 (en) | Semiconductor photodetector, device for multispectrum detection of electromagnetic radiation using such a photodetector and method for using such a device | |
CN115295647B (zh) | 局域电场诱导的硅光电探测器及其制备方法 | |
Ramos et al. | Two-step etch in n-on-p type-II superlattices for surface leakage reduction in mid-wave infrared megapixel detectors | |
US20210167102A1 (en) | Ultraviolet light image sensor | |
US20200393293A1 (en) | Infrared detector and imaging device using the same | |
JPH06224459A (ja) | 受光素子 | |
Linga et al. | Near infrared single photon avalanche detector with negative feedback and self quenching | |
JP5840408B2 (ja) | 赤外線センサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121109 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140219 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140319 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140428 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140710 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140717 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150209 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150511 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150603 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150717 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151019 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20151116 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151215 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5858790 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |