JP5848263B2 - ナノインプリントのためのプロセスガス閉じ込め - Google Patents
ナノインプリントのためのプロセスガス閉じ込め Download PDFInfo
- Publication number
- JP5848263B2 JP5848263B2 JP2012551980A JP2012551980A JP5848263B2 JP 5848263 B2 JP5848263 B2 JP 5848263B2 JP 2012551980 A JP2012551980 A JP 2012551980A JP 2012551980 A JP2012551980 A JP 2012551980A JP 5848263 B2 JP5848263 B2 JP 5848263B2
- Authority
- JP
- Japan
- Prior art keywords
- barrier
- substrate
- chuck
- imprint head
- template
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 28
- 230000008569 process Effects 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 73
- 230000004888 barrier function Effects 0.000 claims description 70
- 238000010926 purge Methods 0.000 claims description 43
- 239000007789 gas Substances 0.000 description 59
- 239000000463 material Substances 0.000 description 19
- 239000003570 air Substances 0.000 description 15
- 239000012530 fluid Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000000203 droplet dispensing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30273810P | 2010-02-09 | 2010-02-09 | |
| US61/302,738 | 2010-02-09 | ||
| PCT/US2011/000227 WO2011100050A2 (en) | 2010-02-09 | 2011-02-08 | Process gas confinement for nano-imprinting |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013519228A JP2013519228A (ja) | 2013-05-23 |
| JP2013519228A5 JP2013519228A5 (https=) | 2014-03-20 |
| JP5848263B2 true JP5848263B2 (ja) | 2016-01-27 |
Family
ID=44353067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012551980A Active JP5848263B2 (ja) | 2010-02-09 | 2011-02-08 | ナノインプリントのためのプロセスガス閉じ込め |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20110193251A1 (https=) |
| EP (1) | EP2534536A2 (https=) |
| JP (1) | JP5848263B2 (https=) |
| TW (1) | TWI620982B (https=) |
| WO (1) | WO2011100050A2 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722801B2 (ja) | 1987-03-18 | 1995-03-15 | 石川島播磨重工業株式会社 | 中空管の鍛造方法 |
| JP3333115B2 (ja) | 1997-07-22 | 2002-10-07 | 株式会社神戸製鋼所 | 大径リングの鍛造装置 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5787691B2 (ja) * | 2011-09-21 | 2015-09-30 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| WO2013048577A1 (en) * | 2011-09-26 | 2013-04-04 | Solarity, Inc. | Substrate and superstrate design and process for nano-imprinting lithography of light and carrier collection management devices |
| JP6064466B2 (ja) * | 2012-09-11 | 2017-01-25 | 大日本印刷株式会社 | インプリント方法およびそれを実施するためのインプリント装置 |
| JP6230041B2 (ja) * | 2013-04-18 | 2017-11-15 | キヤノン株式会社 | インプリント装置、それを用いた物品の製造方法 |
| JP2015056548A (ja) * | 2013-09-12 | 2015-03-23 | 大日本印刷株式会社 | インプリント装置及びインプリント方法 |
| CN103758153A (zh) * | 2014-01-17 | 2014-04-30 | 国家电网公司 | 一种具有警示功能的井盖 |
| JP6525567B2 (ja) | 2014-12-02 | 2019-06-05 | キヤノン株式会社 | インプリント装置及び物品の製造方法 |
| JP7064310B2 (ja) * | 2017-10-24 | 2022-05-10 | キヤノン株式会社 | インプリント装置、および物品製造方法 |
| JP7210155B2 (ja) * | 2018-04-16 | 2023-01-23 | キヤノン株式会社 | 装置、方法、および物品製造方法 |
| US11590687B2 (en) | 2020-06-30 | 2023-02-28 | Canon Kabushiki Kaisha | Systems and methods for reducing pressure while shaping a film |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873087B1 (en) * | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| JP2001358056A (ja) * | 2000-06-15 | 2001-12-26 | Canon Inc | 露光装置 |
| US6764386B2 (en) * | 2002-01-11 | 2004-07-20 | Applied Materials, Inc. | Air bearing-sealed micro-processing chamber |
| US6932934B2 (en) * | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
| US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US6936194B2 (en) | 2002-09-05 | 2005-08-30 | Molecular Imprints, Inc. | Functional patterning material for imprint lithography processes |
| US8349241B2 (en) * | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
| US20040065252A1 (en) * | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
| US7179396B2 (en) * | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
| US7396475B2 (en) | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
| US7157036B2 (en) | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
| US7090716B2 (en) * | 2003-10-02 | 2006-08-15 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
| US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
| US7611348B2 (en) * | 2005-04-19 | 2009-11-03 | Asml Netherlands B.V. | Imprint lithography |
| US7316554B2 (en) * | 2005-09-21 | 2008-01-08 | Molecular Imprints, Inc. | System to control an atmosphere between a body and a substrate |
| US7670530B2 (en) * | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
| ATE513625T1 (de) * | 2006-04-03 | 2011-07-15 | Molecular Imprints Inc | Lithographiedrucksystem |
| US20090056575A1 (en) * | 2007-08-31 | 2009-03-05 | Bartman Jon A | Pattern transfer apparatus |
| NL2005435A (en) * | 2009-11-30 | 2011-05-31 | Asml Netherlands Bv | Imprint lithography apparatus and method. |
-
2011
- 2011-02-08 EP EP11705709A patent/EP2534536A2/en not_active Withdrawn
- 2011-02-08 JP JP2012551980A patent/JP5848263B2/ja active Active
- 2011-02-08 US US13/023,246 patent/US20110193251A1/en not_active Abandoned
- 2011-02-08 WO PCT/US2011/000227 patent/WO2011100050A2/en not_active Ceased
- 2011-02-09 TW TW100104307A patent/TWI620982B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0722801B2 (ja) | 1987-03-18 | 1995-03-15 | 石川島播磨重工業株式会社 | 中空管の鍛造方法 |
| JP3333115B2 (ja) | 1997-07-22 | 2002-10-07 | 株式会社神戸製鋼所 | 大径リングの鍛造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI620982B (zh) | 2018-04-11 |
| EP2534536A2 (en) | 2012-12-19 |
| TW201144951A (en) | 2011-12-16 |
| US20110193251A1 (en) | 2011-08-11 |
| WO2011100050A3 (en) | 2011-11-10 |
| WO2011100050A2 (en) | 2011-08-18 |
| JP2013519228A (ja) | 2013-05-23 |
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