JP5840216B2 - 秩序化された多層結晶有機薄膜構造を形成するための方法、多層結晶有機薄膜構造、それを用いた有機感光装置及び有機発光装置 - Google Patents

秩序化された多層結晶有機薄膜構造を形成するための方法、多層結晶有機薄膜構造、それを用いた有機感光装置及び有機発光装置 Download PDF

Info

Publication number
JP5840216B2
JP5840216B2 JP2013533909A JP2013533909A JP5840216B2 JP 5840216 B2 JP5840216 B2 JP 5840216B2 JP 2013533909 A JP2013533909 A JP 2013533909A JP 2013533909 A JP2013533909 A JP 2013533909A JP 5840216 B2 JP5840216 B2 JP 5840216B2
Authority
JP
Japan
Prior art keywords
thin film
organic
crystalline organic
layers
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013533909A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014500395A5 (enExample
JP2014500395A (ja
Inventor
アール フォーレスト ステファン
アール フォーレスト ステファン
アール ルント リチャード
アール ルント リチャード
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Michigan (System)
Original Assignee
University of Michigan (System)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Michigan (System) filed Critical University of Michigan (System)
Publication of JP2014500395A publication Critical patent/JP2014500395A/ja
Publication of JP2014500395A5 publication Critical patent/JP2014500395A5/ja
Application granted granted Critical
Publication of JP5840216B2 publication Critical patent/JP5840216B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
JP2013533909A 2010-10-13 2011-10-10 秩序化された多層結晶有機薄膜構造を形成するための方法、多層結晶有機薄膜構造、それを用いた有機感光装置及び有機発光装置 Expired - Fee Related JP5840216B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US39278310P 2010-10-13 2010-10-13
US61/392,783 2010-10-13
US13/084,233 2011-04-11
US13/084,233 US8933436B2 (en) 2010-10-13 2011-04-11 Ordered organic-organic multilayer growth
PCT/US2011/055578 WO2012051101A2 (en) 2010-10-13 2011-10-10 Ordered organic-organic multilayer growth

Publications (3)

Publication Number Publication Date
JP2014500395A JP2014500395A (ja) 2014-01-09
JP2014500395A5 JP2014500395A5 (enExample) 2015-11-12
JP5840216B2 true JP5840216B2 (ja) 2016-01-06

Family

ID=45933358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013533909A Expired - Fee Related JP5840216B2 (ja) 2010-10-13 2011-10-10 秩序化された多層結晶有機薄膜構造を形成するための方法、多層結晶有機薄膜構造、それを用いた有機感光装置及び有機発光装置

Country Status (9)

Country Link
US (2) US8933436B2 (enExample)
EP (1) EP2628199B1 (enExample)
JP (1) JP5840216B2 (enExample)
KR (1) KR20130108579A (enExample)
CN (1) CN103384926B (enExample)
AU (1) AU2011313917B2 (enExample)
CA (1) CA2812415A1 (enExample)
TW (1) TW201220571A (enExample)
WO (1) WO2012051101A2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10056519B2 (en) 2008-05-28 2018-08-21 Solar-Tectic, Llc Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
CN106981583B (zh) * 2011-06-21 2019-04-16 科迪华公司 用于oled微腔和缓冲层的材料和方法
JP6139552B2 (ja) * 2011-12-06 2017-05-31 ノヴァレッド ゲーエムベーハー 有機発光素子およびその製造方法
KR20240129241A (ko) 2012-04-20 2024-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
US9444049B2 (en) 2012-07-03 2016-09-13 University Of Vermont And State Agricultural College Methods for forming one or more crystalline layers on a substrate
KR20140043551A (ko) * 2012-09-24 2014-04-10 삼성디스플레이 주식회사 유기발광소자, 이를 포함하는 유기발광 표시패널 및 유기발광 표시패널의 제조방법
JP6294460B2 (ja) * 2014-02-18 2018-03-14 シャープ株式会社 有機エレクトロルミネッセンス素子、及び、有機エレクトロルミネッセンスパネル
US9166188B1 (en) * 2014-06-10 2015-10-20 Arolltech Co., Ltd. Organic light emitting diode device
US9490453B2 (en) * 2014-10-06 2016-11-08 Winbond Electronics Corp. Quasi-crystal organic light-emitting display panel and method for simulating optical efficiency of the same
FR3027155B1 (fr) * 2014-10-08 2018-01-12 Ecole Polytechnique Procede de fabrication d'un dispositif electronique, en particulier a base de nanotubes de carbone
EP4105966A3 (en) 2015-09-08 2023-06-21 Massachusetts Institute Of Technology Systems and methods for graphene based layer transfer
US10903073B2 (en) 2016-11-08 2021-01-26 Massachusetts Institute Of Technology Systems and methods of dislocation filtering for layer transfer
CN106854775B (zh) * 2016-11-11 2019-06-18 苏州大学 利用水-空气-有机溶剂三相界面制备有机半导体小分子单晶薄膜的方法
US11063073B2 (en) 2017-02-24 2021-07-13 Massachusetts Institute Of Technology Apparatus and methods for curved focal plane array
EP3613081A1 (en) * 2017-04-18 2020-02-26 Massachusetts Institute Of Technology Systems and methods for fabricating semiconductor devices via remote epitaxy
WO2019068144A1 (en) * 2017-10-04 2019-04-11 Queensland University Of Technology TUNABLE SPECTRUM ENDOSCOPE COMPONENT
US10718726B2 (en) * 2017-10-13 2020-07-21 Infineon Technologies Austria Ag Method for determining the concentration of an element of a heteroepitaxial layer
CN108461640B (zh) * 2018-03-16 2020-01-31 中国科学院长春应用化学研究所 晶态有机电致发光二极管及其应用
CN108538905B (zh) * 2018-05-31 2021-03-16 武汉华星光电半导体显示技术有限公司 Oled发光器件及oled显示装置
US20210125826A1 (en) 2018-06-22 2021-04-29 Massachusetts Institute Of Technology Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles
WO2021110162A1 (zh) * 2019-12-05 2021-06-10 浙江大学 一种有机单晶异质结复合膜、其制备方法及用途
CN114497407A (zh) * 2021-12-31 2022-05-13 云谷(固安)科技有限公司 发光器件、发光器件的制备方法及显示装置
US20240117521A1 (en) * 2022-10-03 2024-04-11 The Trustees Of Princeton University Method and system for growing a lattice matched, multilayer, organic crystal heterostructure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4409942B2 (ja) 2001-08-29 2010-02-03 ザ トラスティーズ オブ プリンストン ユニバーシテイ 金属錯体を含むキャリア輸送層を有する有機発光デバイス
US6806491B2 (en) * 2002-04-03 2004-10-19 Tsinghua University Organic light-emitting devices
US7675057B2 (en) 2003-03-19 2010-03-09 Technische Universitaet Dresden Photoactive component with organic layers
US7291223B2 (en) 2003-09-24 2007-11-06 Nitto Denko Corporation Epitaxial organic layered structure and method for making
CN1846461A (zh) * 2003-09-24 2006-10-11 日东电工株式会社 取向生长的有机分层结构及其制作方法
US7655961B2 (en) * 2003-10-02 2010-02-02 Maxdem Incorporated Organic diodes and materials
JP2005303027A (ja) * 2004-04-13 2005-10-27 Nissan Motor Co Ltd 半導体装置
US7776456B2 (en) 2004-12-03 2010-08-17 Universal Display Corporation Organic light emitting devices with an emissive region having emissive and non-emissive layers and method of making
US20060269782A1 (en) * 2005-05-25 2006-11-30 Eastman Kodak Company OLED electron-transporting layer
US9040817B2 (en) * 2006-03-20 2015-05-26 Panasonic Corporation Organic thin film solar cell
US20070243658A1 (en) 2006-04-14 2007-10-18 Katsura Hirai Production method of crystalline organic semiconductor thin film, organic semiconductor thin film, electronic device, and thin film transistor
CN100555702C (zh) 2006-04-29 2009-10-28 中国科学院长春应用化学研究所 有机半导体晶体薄膜及弱取向外延生长制备方法和应用
US11031567B2 (en) * 2006-07-11 2021-06-08 The Regents Of The University Of Michigan Efficient solar cells using all-organic nanocrystalline networks
CN101785128B (zh) * 2007-08-24 2016-04-27 密歇根大学董事会 有序结晶有机膜的生长
WO2010110164A1 (ja) * 2009-03-26 2010-09-30 コニカミノルタホールディングス株式会社 有機光電変換素子、それを用いた太陽電池及び光センサアレイ
US20120061658A1 (en) 2009-06-03 2012-03-15 The Regents Of The University Of Michigan Structural templating for organic electronic devices having an organic film with long range order

Also Published As

Publication number Publication date
US9306184B2 (en) 2016-04-05
AU2011313917B2 (en) 2015-06-11
US8933436B2 (en) 2015-01-13
AU2011313917A1 (en) 2013-04-11
EP2628199A4 (en) 2014-10-22
CA2812415A1 (en) 2012-04-19
TW201220571A (en) 2012-05-16
EP2628199A2 (en) 2013-08-21
JP2014500395A (ja) 2014-01-09
EP2628199B1 (en) 2015-09-02
WO2012051101A2 (en) 2012-04-19
CN103384926A (zh) 2013-11-06
US20150179968A1 (en) 2015-06-25
KR20130108579A (ko) 2013-10-04
US20120091436A1 (en) 2012-04-19
CN103384926B (zh) 2016-01-20
WO2012051101A3 (en) 2012-05-31

Similar Documents

Publication Publication Date Title
JP2014500395A (ja) 秩序化された多層結晶有機薄膜構造を形成するための方法、多層結晶有機薄膜構造、それを用いた有機感光装置及び有機発光装置
US9748094B2 (en) Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and semiconductor device including the semiconductor compound structure
US7435617B2 (en) Method of fabricating an optoelectronic device having a bulk heterojunction
CN104393128B (zh) 一种使用SiC衬底的氮化物LED外延结构及其制备方法
AU2010286935B2 (en) Structural templating for organic electronic devices having an organic film with long range order
She et al. Growth and interfacial structure of methylammonium lead iodide thin films on Au (111)
KR101416989B1 (ko) 벌크 이형접합부를 갖는 광전자 장치의 제조 방법
Bae et al. CsPbBr3 and Cs4PbBr6 perovskite light-emitting diodes using a thermally evaporated host–dopant system
Kim et al. Molecular alignment and nanostructure of 1, 4, 5, 8, 9, 11-hexaazatriphenylene-hexanitrile (HATCN) thin films on organic surfaces
CN108461640B (zh) 晶态有机电致发光二极管及其应用
Matsushima et al. Electroluminescence enhancement in dry-processed organic-inorganic layered perovskite films
CN115275073B (zh) 3d钙钛矿发光二极管及其制备方法
Huang et al. Low-temperature scanning tunneling microscopy and near-edge X-ray absorption fine structure investigation of epitaxial growth of F16CuPc thin films on graphite
AU2015202672A1 (en) Ordered organic-organic multilayer growth
HK1191136A (en) Ordered organic-organic multilayer growth
CN112397660B (zh) 纳米材料及其制备方法和应用
Hosokai et al. H2O-Induced Crystallization of Organic Luminescent Thin Films by Direct Film Storage in a High Vacuum
CN112928221B (zh) 一种发光层含有纳米聚集体的晶态有机电致发光二极管及应用
KR20250159893A (ko) 페로브스카이트 태양전지의 제조방법 및 페로브스카이트 태양전지
Xiao et al. Efficient Perovskite LEDs Featuring Nanometer Sized Crystallites
HK1170335A (en) Structural templating for organic electronic devices having an organic film with long range order

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141003

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150610

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150630

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20150925

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151027

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151110

R150 Certificate of patent or registration of utility model

Ref document number: 5840216

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees