CN103384926B - 有序的有机-有机多层生长 - Google Patents

有序的有机-有机多层生长 Download PDF

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Publication number
CN103384926B
CN103384926B CN201180049657.1A CN201180049657A CN103384926B CN 103384926 B CN103384926 B CN 103384926B CN 201180049657 A CN201180049657 A CN 201180049657A CN 103384926 B CN103384926 B CN 103384926B
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crystalline organic
thin film
layers
crystalline
organic
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Chinese (zh)
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CN103384926A (zh
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S·R·弗雷斯特
R·R·伦特
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University of Michigan System
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University of Michigan System
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54Organic compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/16Electron transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18Carrier blocking layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/191Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/40Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
CN201180049657.1A 2010-10-13 2011-10-10 有序的有机-有机多层生长 Expired - Fee Related CN103384926B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US39278310P 2010-10-13 2010-10-13
US61/392,783 2010-10-13
US13/084,233 US8933436B2 (en) 2010-10-13 2011-04-11 Ordered organic-organic multilayer growth
US13/084,233 2011-04-11
PCT/US2011/055578 WO2012051101A2 (en) 2010-10-13 2011-10-10 Ordered organic-organic multilayer growth

Publications (2)

Publication Number Publication Date
CN103384926A CN103384926A (zh) 2013-11-06
CN103384926B true CN103384926B (zh) 2016-01-20

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Country Status (9)

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US (2) US8933436B2 (enExample)
EP (1) EP2628199B1 (enExample)
JP (1) JP5840216B2 (enExample)
KR (1) KR20130108579A (enExample)
CN (1) CN103384926B (enExample)
AU (1) AU2011313917B2 (enExample)
CA (1) CA2812415A1 (enExample)
TW (1) TW201220571A (enExample)
WO (1) WO2012051101A2 (enExample)

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KR101747059B1 (ko) * 2011-06-21 2017-07-11 카티바, 인크. Oled 마이크로 공동 및 버퍼 층을 위한 물질과 그 생산 방법
US9318705B2 (en) * 2011-12-06 2016-04-19 Novaled Gmbh Organic light emitting device with roughening layer and method of producing
KR20210008947A (ko) 2012-04-20 2021-01-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
US9444049B2 (en) 2012-07-03 2016-09-13 University Of Vermont And State Agricultural College Methods for forming one or more crystalline layers on a substrate
KR20140043551A (ko) * 2012-09-24 2014-04-10 삼성디스플레이 주식회사 유기발광소자, 이를 포함하는 유기발광 표시패널 및 유기발광 표시패널의 제조방법
WO2015125653A1 (ja) * 2014-02-18 2015-08-27 シャープ株式会社 有機エレクトロルミネッセンス素子、及び、有機エレクトロルミネッセンスパネル
US9166188B1 (en) * 2014-06-10 2015-10-20 Arolltech Co., Ltd. Organic light emitting diode device
US9490453B2 (en) * 2014-10-06 2016-11-08 Winbond Electronics Corp. Quasi-crystal organic light-emitting display panel and method for simulating optical efficiency of the same
FR3027155B1 (fr) * 2014-10-08 2018-01-12 Ecole Polytechnique Procede de fabrication d'un dispositif electronique, en particulier a base de nanotubes de carbone
EP4105966A3 (en) 2015-09-08 2023-06-21 Massachusetts Institute Of Technology Systems and methods for graphene based layer transfer
WO2018089444A1 (en) 2016-11-08 2018-05-17 Massachusetts Institute Of Technology Systems and methods of dislocation filtering for layer transfer
CN106854775B (zh) * 2016-11-11 2019-06-18 苏州大学 利用水-空气-有机溶剂三相界面制备有机半导体小分子单晶薄膜的方法
WO2018156877A1 (en) 2017-02-24 2018-08-30 Massachusetts Institute Of Technology Apparatus and methods for curved focal plane array
US20200043790A1 (en) * 2017-04-18 2020-02-06 Massachusetts Institute Of Technology Systems and methods for fabricating semiconductor devices via remote epitaxy
WO2019068144A1 (en) * 2017-10-04 2019-04-11 Queensland University Of Technology TUNABLE SPECTRUM ENDOSCOPE COMPONENT
US10718726B2 (en) * 2017-10-13 2020-07-21 Infineon Technologies Austria Ag Method for determining the concentration of an element of a heteroepitaxial layer
CN108461640B (zh) * 2018-03-16 2020-01-31 中国科学院长春应用化学研究所 晶态有机电致发光二极管及其应用
CN108538905B (zh) * 2018-05-31 2021-03-16 武汉华星光电半导体显示技术有限公司 Oled发光器件及oled显示装置
US20210125826A1 (en) 2018-06-22 2021-04-29 Massachusetts Institute Of Technology Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articles
WO2021110162A1 (zh) * 2019-12-05 2021-06-10 浙江大学 一种有机单晶异质结复合膜、其制备方法及用途
CN114497407A (zh) * 2021-12-31 2022-05-13 云谷(固安)科技有限公司 发光器件、发光器件的制备方法及显示装置

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Also Published As

Publication number Publication date
EP2628199B1 (en) 2015-09-02
JP5840216B2 (ja) 2016-01-06
WO2012051101A3 (en) 2012-05-31
JP2014500395A (ja) 2014-01-09
AU2011313917B2 (en) 2015-06-11
US9306184B2 (en) 2016-04-05
TW201220571A (en) 2012-05-16
US8933436B2 (en) 2015-01-13
CN103384926A (zh) 2013-11-06
US20150179968A1 (en) 2015-06-25
US20120091436A1 (en) 2012-04-19
WO2012051101A2 (en) 2012-04-19
EP2628199A4 (en) 2014-10-22
EP2628199A2 (en) 2013-08-21
CA2812415A1 (en) 2012-04-19
AU2011313917A1 (en) 2013-04-11
KR20130108579A (ko) 2013-10-04

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