JP5839240B2 - 装置および装置の動作方法 - Google Patents

装置および装置の動作方法 Download PDF

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Publication number
JP5839240B2
JP5839240B2 JP2013525951A JP2013525951A JP5839240B2 JP 5839240 B2 JP5839240 B2 JP 5839240B2 JP 2013525951 A JP2013525951 A JP 2013525951A JP 2013525951 A JP2013525951 A JP 2013525951A JP 5839240 B2 JP5839240 B2 JP 5839240B2
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Japan
Prior art keywords
sputtering target
arc chamber
sputtering
supply system
cover
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JP2013525951A
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English (en)
Japanese (ja)
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JP2013536561A (ja
Inventor
チャネイ、クレイグ、アール．
Original Assignee
バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/024—Moving components not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/081—Sputtering sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0822—Multiple sources
    • H01J2237/0827—Multiple sources for producing different ions sequentially

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2013525951A 2010-08-24 2011-08-11 装置および装置の動作方法 Active JP5839240B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/862,104 US20120048723A1 (en) 2010-08-24 2010-08-24 Sputter target feed system
US12/862,104 2010-08-24
PCT/US2011/047384 WO2012027123A1 (en) 2010-08-24 2011-08-11 Sputter target feed system

Publications (2)

Publication Number Publication Date
JP2013536561A JP2013536561A (ja) 2013-09-19
JP5839240B2 true JP5839240B2 (ja) 2016-01-06

Family

ID=44651935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013525951A Active JP5839240B2 (ja) 2010-08-24 2011-08-11 装置および装置の動作方法

Country Status (6)

Country Link
US (1) US20120048723A1 (zh)
JP (1) JP5839240B2 (zh)
KR (1) KR101827473B1 (zh)
CN (1) CN103069537B (zh)
TW (1) TWI517200B (zh)
WO (1) WO2012027123A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
US8937003B2 (en) * 2011-09-16 2015-01-20 Varian Semiconductor Equipment Associates, Inc. Technique for ion implanting a target
US20160322198A1 (en) * 2015-04-30 2016-11-03 Infineon Technologies Ag Ion Source for Metal Implantation and Methods Thereof
WO2019118120A1 (en) * 2017-12-12 2019-06-20 Applied Materials, Inc. Ion source crucible for solid feed materials
US10892137B2 (en) * 2018-09-12 2021-01-12 Entegris, Inc. Ion implantation processes and apparatus using gallium
US11404254B2 (en) * 2018-09-19 2022-08-02 Varian Semiconductor Equipment Associates, Inc. Insertable target holder for solid dopant materials
US11170967B2 (en) * 2019-03-22 2021-11-09 Axcelis Technologies, Inc. Liquid metal ion source
US11170973B2 (en) 2019-10-09 2021-11-09 Applied Materials, Inc. Temperature control for insertable target holder for solid dopant materials
US10957509B1 (en) * 2019-11-07 2021-03-23 Applied Materials, Inc. Insertable target holder for improved stability and performance for solid dopant materials
US11854760B2 (en) 2021-06-21 2023-12-26 Applied Materials, Inc. Crucible design for liquid metal in an ion source

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1356769A (en) * 1973-03-27 1974-06-12 Cit Alcatel Apparatus and method for depositing thin layers on a substrate
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device
JPS6226746A (ja) * 1985-07-26 1987-02-04 Yuugou Giken:Kk イオンプレ−テイング用プラズマ源
US5046145A (en) * 1990-04-20 1991-09-03 Hydro-Quebec Improved arc reactor with advanceable electrode
JP3227713B2 (ja) * 1991-04-17 2001-11-12 石川島播磨重工業株式会社 スパッタ型イオン源
JP3100998B2 (ja) * 1991-05-29 2000-10-23 株式会社神戸製鋼所 アーク蒸発源装置
EP0516425B1 (en) * 1991-05-29 1998-08-26 KABUSHIKI KAISHA KOBE SEIKO SHO also known as Kobe Steel Ltd. Cathodic arc deposition system and a method of controlling same
DE4227164A1 (de) * 1992-08-17 1994-02-24 Siemens Ag Sputterionenquelle
US5441624A (en) * 1992-08-25 1995-08-15 Northeastern University Triggered vacuum anodic arc
KR970002891A (ko) * 1995-06-28 1997-01-28 배순훈 브이씨알 헤드의 박막 증착용 스퍼터링 장치
GB9722650D0 (en) * 1997-10-24 1997-12-24 Univ Nanyang Cathode ARC source with target feeding apparatus
EP1257376B1 (en) * 2000-02-10 2004-01-21 Tetronics Limited Plasma arc reactor for the production of fine powders
US6583544B1 (en) * 2000-08-07 2003-06-24 Axcelis Technologies, Inc. Ion source having replaceable and sputterable solid source material
JP4756434B2 (ja) * 2001-06-14 2011-08-24 日立金属株式会社 皮膜形成装置
DE10213049A1 (de) * 2002-03-22 2003-10-02 Dieter Wurczinger Drehbare Rohrkatode
JP4109503B2 (ja) * 2002-07-22 2008-07-02 日新電機株式会社 真空アーク蒸着装置
US8771483B2 (en) * 2007-09-05 2014-07-08 Intermolecular, Inc. Combinatorial process system

Also Published As

Publication number Publication date
JP2013536561A (ja) 2013-09-19
US20120048723A1 (en) 2012-03-01
CN103069537A (zh) 2013-04-24
KR101827473B1 (ko) 2018-03-22
TW201225149A (en) 2012-06-16
TWI517200B (zh) 2016-01-11
CN103069537B (zh) 2016-12-07
WO2012027123A1 (en) 2012-03-01
KR20130102563A (ko) 2013-09-17

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