JP5832985B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5832985B2 JP5832985B2 JP2012247563A JP2012247563A JP5832985B2 JP 5832985 B2 JP5832985 B2 JP 5832985B2 JP 2012247563 A JP2012247563 A JP 2012247563A JP 2012247563 A JP2012247563 A JP 2012247563A JP 5832985 B2 JP5832985 B2 JP 5832985B2
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- JP
- Japan
- Prior art keywords
- outer rim
- film forming
- main hearth
- hearth
- forming apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000008021 deposition Effects 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims description 61
- 230000002093 peripheral effect Effects 0.000 claims description 44
- 239000002245 particle Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 15
- 238000012423 maintenance Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 238000007733 ion plating Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 239000011553 magnetic fluid Substances 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007790 scraping Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Details Of Rigid Or Semi-Rigid Containers (AREA)
Description
図1は、本発明の成膜装置の一実施形態の構成を示す平断面図である。図2は、図1中の主ハース機構周辺の構成を拡大して示す側断面図である。本実施形態の成膜装置1は、いわゆるイオンプレーティング法に用いられるイオンプレーティング装置である。なお、説明の便宜上、図1には、XYZ座標系を示す。Y軸方向は、後述する被成膜物が搬送される方向である。X軸方向は、被成膜物と後述するハース機構とが対向する方向である。Z軸方向は、X軸方向とY軸方向とに直交する方向である。
図6及び図7に示す第二実施形態に係る成膜装置のカバー構造130は、主ハース21の先端部21d付近の成膜材料の付着物を削ぐ刃部81を有する除去構造80が設けられている点で、第一実施形態に係る成膜装置1のカバー構造30と主に相違している。
図8及び図9に示す第三実施形態に係る成膜装置のカバー構造230は、リング状の外歯車に係る歯車39に代えて、リング状の内歯車に係る歯車91を適用している点で、第一実施形態に係る成膜装置1のカバー構造30と主に相違している。
Claims (4)
- プラズマビームによって成膜材料を加熱し、前記成膜材料から気化した粒子を被成膜物に付着させる成膜装置であって、
前記成膜材料を保持するように水平方向に貫通する孔を有すると共に、前記プラズマビームを前記成膜材料へ導く、または前記プラズマビームが導かれる主陽極である主ハースと、
前記主ハースを取り囲み、歯部を有するアウターリムと、
前記アウターリムの前記歯部と係合することによって、前記アウターリムに前記主ハース周りの回転力を付与する回転部と、
前記主ハースと前記アウターリムとの間に設けられ、前記アウターリムの水平方向における動きを規制すると共に、前記アウターリムを回転可能に支持する支持部材と、を備える成膜装置。 - 前記アウターリムには、前記主ハースの先端部の付着物を削ぐ刃部が取り付けられている、請求項1に記載の成膜装置。
- 前記アウターリムの先端部は、内周側へ向かって折り返されている、請求項1又は2に記載の成膜装置。
- 前記支持部材は、セラミックからなる、請求項1〜3の何れか一項に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012247563A JP5832985B2 (ja) | 2012-11-09 | 2012-11-09 | 成膜装置 |
TW102132351A TWI477627B (zh) | 2012-11-09 | 2013-09-09 | Film forming device |
KR1020130109625A KR101513192B1 (ko) | 2012-11-09 | 2013-09-12 | 성막장치 |
CN201310424602.5A CN103805963B (zh) | 2012-11-09 | 2013-09-17 | 成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012247563A JP5832985B2 (ja) | 2012-11-09 | 2012-11-09 | 成膜装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014095125A JP2014095125A (ja) | 2014-05-22 |
JP2014095125A5 JP2014095125A5 (ja) | 2014-07-17 |
JP5832985B2 true JP5832985B2 (ja) | 2015-12-16 |
Family
ID=50703332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012247563A Active JP5832985B2 (ja) | 2012-11-09 | 2012-11-09 | 成膜装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5832985B2 (ja) |
KR (1) | KR101513192B1 (ja) |
CN (1) | CN103805963B (ja) |
TW (1) | TWI477627B (ja) |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5490912A (en) * | 1994-05-31 | 1996-02-13 | The Regents Of The University Of California | Apparatus for laser assisted thin film deposition |
JP2001000854A (ja) * | 1999-06-23 | 2001-01-09 | Sumitomo Heavy Ind Ltd | 付着物除去装置及び蒸着装置 |
EP1136587B1 (en) * | 2000-03-23 | 2013-05-15 | Hitachi Metals, Ltd. | Deposited-film forming apparatus |
JP3732074B2 (ja) | 2000-07-11 | 2006-01-05 | 住友重機械工業株式会社 | 成膜装置 |
JP2002180240A (ja) | 2000-12-20 | 2002-06-26 | Sumitomo Heavy Ind Ltd | 成膜装置 |
KR20050072946A (ko) * | 2004-01-08 | 2005-07-13 | 삼성전자주식회사 | 고균일 증착용 장치 |
JP2006346765A (ja) * | 2005-06-13 | 2006-12-28 | Sumitomo Heavy Ind Ltd | ハンドリング装置 |
JP2006348318A (ja) * | 2005-06-13 | 2006-12-28 | Sumitomo Heavy Ind Ltd | ハース機構、ハンドリング機構、及び成膜装置 |
JP2006348334A (ja) | 2005-06-14 | 2006-12-28 | Sumitomo Heavy Ind Ltd | ハース機構及びハース交換装置 |
TWI364126B (en) * | 2007-11-23 | 2012-05-11 | Ind Tech Res Inst | Plasma assisted apparatus for forming organic film |
JP2010013701A (ja) * | 2008-07-03 | 2010-01-21 | Sanyo Shinku Kogyo Kk | プラズマ発生装置および成膜装置 |
JP2010126797A (ja) * | 2008-11-28 | 2010-06-10 | Tokyo Electron Ltd | 成膜装置、半導体製造装置、これらに用いられるサセプタ、プログラム、およびコンピュータ可読記憶媒体 |
US9297072B2 (en) * | 2008-12-01 | 2016-03-29 | Tokyo Electron Limited | Film deposition apparatus |
JP2013147677A (ja) * | 2010-04-28 | 2013-08-01 | Ulvac Japan Ltd | 成膜装置 |
WO2011140481A1 (en) * | 2010-05-06 | 2011-11-10 | University Of Virginia Patent Foundation | Spotless arc directed vapor deposition (sa-dvd) and related method thereof |
JP2012054508A (ja) * | 2010-09-03 | 2012-03-15 | Tokyo Electron Ltd | 成膜装置 |
JP2012140671A (ja) * | 2010-12-28 | 2012-07-26 | Canon Tokki Corp | 成膜装置 |
JP5456716B2 (ja) * | 2011-03-30 | 2014-04-02 | 住友重機械工業株式会社 | 成膜装置 |
-
2012
- 2012-11-09 JP JP2012247563A patent/JP5832985B2/ja active Active
-
2013
- 2013-09-09 TW TW102132351A patent/TWI477627B/zh active
- 2013-09-12 KR KR1020130109625A patent/KR101513192B1/ko active IP Right Grant
- 2013-09-17 CN CN201310424602.5A patent/CN103805963B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN103805963B (zh) | 2017-01-04 |
CN103805963A (zh) | 2014-05-21 |
KR20140060221A (ko) | 2014-05-19 |
JP2014095125A (ja) | 2014-05-22 |
KR101513192B1 (ko) | 2015-04-17 |
TW201418492A (zh) | 2014-05-16 |
TWI477627B (zh) | 2015-03-21 |
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