JP5824135B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5824135B2
JP5824135B2 JP2014262313A JP2014262313A JP5824135B2 JP 5824135 B2 JP5824135 B2 JP 5824135B2 JP 2014262313 A JP2014262313 A JP 2014262313A JP 2014262313 A JP2014262313 A JP 2014262313A JP 5824135 B2 JP5824135 B2 JP 5824135B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
source
mosfet
lead
junction fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014262313A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015092609A (ja
JP2015092609A5 (enExample
Inventor
金澤　孝光
孝光 金澤
秋山　悟
悟 秋山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2014262313A priority Critical patent/JP5824135B2/ja
Publication of JP2015092609A publication Critical patent/JP2015092609A/ja
Publication of JP2015092609A5 publication Critical patent/JP2015092609A5/ja
Application granted granted Critical
Publication of JP5824135B2 publication Critical patent/JP5824135B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
JP2014262313A 2014-12-25 2014-12-25 半導体装置 Active JP5824135B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014262313A JP5824135B2 (ja) 2014-12-25 2014-12-25 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014262313A JP5824135B2 (ja) 2014-12-25 2014-12-25 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2013535780A Division JP5676771B2 (ja) 2011-09-30 2011-09-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2015092609A JP2015092609A (ja) 2015-05-14
JP2015092609A5 JP2015092609A5 (enExample) 2015-08-06
JP5824135B2 true JP5824135B2 (ja) 2015-11-25

Family

ID=53195567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014262313A Active JP5824135B2 (ja) 2014-12-25 2014-12-25 半導体装置

Country Status (1)

Country Link
JP (1) JP5824135B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6767789B2 (ja) 2016-06-29 2020-10-14 ローム株式会社 半導体装置
WO2018180255A1 (ja) 2017-03-28 2018-10-04 ローム株式会社 半導体装置および半導体装置の製造方法
JP6822939B2 (ja) 2017-11-30 2021-01-27 株式会社東芝 半導体装置
US10586755B2 (en) 2018-01-15 2020-03-10 Rohm Co., Ltd. Semiconductor device, and method for manufacturing semiconductor device
DE102019112935B4 (de) * 2019-05-16 2021-04-29 Danfoss Silicon Power Gmbh Halbleitermodul

Also Published As

Publication number Publication date
JP2015092609A (ja) 2015-05-14

Similar Documents

Publication Publication Date Title
JP5676771B2 (ja) 半導体装置
US10607978B2 (en) Semiconductor device and electronic apparatus
US11037847B2 (en) Method of manufacturing semiconductor module and semiconductor module
US9048119B2 (en) Semiconductor device with normally off and normally on transistors
US10049968B2 (en) Semiconductor device
JP5824135B2 (ja) 半導体装置
US10727228B2 (en) Stacked integrated circuit
JP2018195838A (ja) 半導体装置
HK1236676A (en) Semiconductor device
HK1236676A1 (en) Semiconductor device
HK1196464A (en) Semiconductor device
HK1196464B (en) Semiconductor device

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150617

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150907

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150915

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151008

R150 Certificate of patent or registration of utility model

Ref document number: 5824135

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150