JP2015092609A5 - - Google Patents
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- Publication number
- JP2015092609A5 JP2015092609A5 JP2014262313A JP2014262313A JP2015092609A5 JP 2015092609 A5 JP2015092609 A5 JP 2015092609A5 JP 2014262313 A JP2014262313 A JP 2014262313A JP 2014262313 A JP2014262313 A JP 2014262313A JP 2015092609 A5 JP2015092609 A5 JP 2015092609A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- modification
- shows
- package
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 description 47
- 238000012986 modification Methods 0.000 description 22
- 230000004048 modification Effects 0.000 description 22
- 238000010586 diagram Methods 0.000 description 18
- 102100031272 Calcineurin B homologous protein 2 Human genes 0.000 description 15
- 241001510512 Chlamydia phage 2 Species 0.000 description 15
- 101000777239 Homo sapiens Calcineurin B homologous protein 2 Proteins 0.000 description 15
- JPKJQBJPBRLVTM-OSLIGDBKSA-N (2s)-2-amino-n-[(2s,3r)-3-hydroxy-1-[[(2s)-1-[[(2s)-1-[[(2s)-1-[[(2r)-1-(1h-indol-3-yl)-3-oxopropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-1-oxobutan-2-yl]-6-iminohexanamide Chemical compound C([C@H](NC(=O)[C@@H](NC(=O)[C@@H](N)CCCC=N)[C@H](O)C)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@H](CC=1C2=CC=CC=C2NC=1)C=O)C1=CC=CC=C1 JPKJQBJPBRLVTM-OSLIGDBKSA-N 0.000 description 10
- 102100031277 Calcineurin B homologous protein 1 Human genes 0.000 description 10
- 241000839426 Chlamydia virus Chp1 Species 0.000 description 10
- 101000777252 Homo sapiens Calcineurin B homologous protein 1 Proteins 0.000 description 10
- 101000943802 Homo sapiens Cysteine and histidine-rich domain-containing protein 1 Proteins 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 101150095879 PLT2 gene Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014262313A JP5824135B2 (ja) | 2014-12-25 | 2014-12-25 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014262313A JP5824135B2 (ja) | 2014-12-25 | 2014-12-25 | 半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013535780A Division JP5676771B2 (ja) | 2011-09-30 | 2011-09-30 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015092609A JP2015092609A (ja) | 2015-05-14 |
| JP2015092609A5 true JP2015092609A5 (enExample) | 2015-08-06 |
| JP5824135B2 JP5824135B2 (ja) | 2015-11-25 |
Family
ID=53195567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014262313A Active JP5824135B2 (ja) | 2014-12-25 | 2014-12-25 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5824135B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6767789B2 (ja) | 2016-06-29 | 2020-10-14 | ローム株式会社 | 半導体装置 |
| WO2018180255A1 (ja) | 2017-03-28 | 2018-10-04 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6822939B2 (ja) | 2017-11-30 | 2021-01-27 | 株式会社東芝 | 半導体装置 |
| US10586755B2 (en) | 2018-01-15 | 2020-03-10 | Rohm Co., Ltd. | Semiconductor device, and method for manufacturing semiconductor device |
| DE102019112935B4 (de) * | 2019-05-16 | 2021-04-29 | Danfoss Silicon Power Gmbh | Halbleitermodul |
-
2014
- 2014-12-25 JP JP2014262313A patent/JP5824135B2/ja active Active
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