JP5806261B2 - 高集光効率を有するled型フォトリソグラフィー照明器 - Google Patents
高集光効率を有するled型フォトリソグラフィー照明器 Download PDFInfo
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- 238000000206 photolithography Methods 0.000 claims description 44
- 238000003384 imaging method Methods 0.000 claims description 29
- 238000005286 illumination Methods 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 21
- 229910052753 mercury Inorganic materials 0.000 description 21
- 238000000034 method Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005094 computer simulation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/04—Refractors for light sources of lens shape
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Led Device Packages (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Description
本開示の一実施形態は、本開示の照明器を利用したフォトリソグラフィーシステムである。本願で開示される照明器を適用することができるフォトリソグラフィーシステムとしては、例えば、米国特許7,177,099、7,148,953、7,116,496、6,863,403、6,813,098、6,381,077および5,410,434が挙げられる。これらの特許は、本願に参照として組み込まれる。
照明器10には、多数の重要な設計思想が内在している。LED312の群314から発せられる収集光は、フォトリソグラフィーシステム200で使用されている投影結像レンズ230のエタンデュに適合しなければならない。エタンデュとは、光源サイズ(mm2)と立体角(ステラジアン)の積であって、mm2−ステラジアンの単位で表される。この積は、光源310の輝度(watts/mm2−ステラジアン)に反比例する。エタンデュは、光学系において保存される。このように、ある光源サイズでは、光学系によって集光される光320の角放出量が光学系のエタンデュによって決定される。既存のレンズやミラーを使用してエタンデュを小さくすることによって、光源の輝度を更に高めることはできない。光学を駆使して光源310の寸法を拡大したり縮小したりすることができ、また、光源寸法と立体角を反比例的に変化させることもできるが、エタンデュは一定に保たれる。
Claims (11)
- 照明器軸に沿って、
第1面に配列される複数の発光ダイオード(以下「LED」と略する)を含む光源と、
前記第1面と実質的に平行である第2面に配列される複数のマイクロレンズと、
入力端および出力端を有するホモジナイザーロッドと
を備え、
各LEDは、化学光を発するLEDダイと、軸と、LDの寸法で規定される第1領域とを有し、600mW/mm 2 超の放射輝度で発光し、
前記LEDダイは、寸法LHで規定される第2領域を有すると共に1つの前記LEDダイに対して1つ設けられる非発光放熱板によって支持されており、
前記寸法LHは、前記寸法LDよりも大きく、
各マイクロレンズは、複数のLEDダイのうち対応する一つと略同軸のマイクロレンズ軸を有すると共に、2倍から20倍の倍率Mを有すると共に(0.5)・L H /L D ≦M≦(1.1)・L H /L D の条件を満し、
各マイクロレンズは、前記ホモジナイザーロッドの入力端上に、対応するLEDダイの像を形成して、実質的に前記入力端全体を覆う複数のLEDダイ像を形成し、その結果、複数の仮想LED光源を前記入力端上に規定すると共に出力端において+/−2%の範囲内の照明均質性を規定する
フォトリソグラフィーシステムの照明器。 - 前記ホモジナイザーロッドは、先細形状を呈する
請求項1に記載のフォトリソグラフィーシステムの照明器。 - 前記照明器は、50%超の集光効率を有する
請求項1又は2に記載のフォトリソグラフィーシステムの照明器。 - 前記照明器は、75%超の集光効率を有する
請求項3に記載のフォトリソグラフィーシステムの照明器。 - 前記化学光は、360nmから450nmの波長を有する
請求項1から4のいずれかに記載のフォトリソグラフィーシステムの照明器。 - 前記フォトリソグラフィーシステムは、レチクルを含み、
前記照明器は、リレー光学システムをさらに有し、
前記リレー光学システムは、前記ホモジナイザーロッドの出力端から照射される均質化された化学光を受光して前記レチクルを照らすように構成される
請求項1から5のいずれかに記載のフォトリソグラフィーシステムの照明器。 - フィールド長を有する投影結像システムを有するフォトリソグラフィーシステムの照明器であって、
第1面に配列される複数の発光ダイオード(以下「LED」と略する)を含む光源と、
前記第1面と実質的に平行である第2面に配列される複数のマイクロレンズと、
入力端および出力端を有するホモジナイザーロッドと
を備え、
各LEDは、600mW/mm 2 超の放射輝度の化学光を発するLEDダイと、軸と、LDの寸法で規定される第1領域とを有し、
前記LEDダイは、寸法LHで規定される第2領域を有すると共に1つの前記LEDダイに対して1つ設けられる非発光放熱板によって支持されており、
前記寸法LHは、前記寸法LDよりも大きく、
各マイクロレンズは、複数のLEDダイのうち対応する一つと略同軸のマイクロレンズ軸を有すると共に、(0.5)・LH/LD≦M≦(1.1)・LH/LDの条件を満たす倍率Mを有し、
前記出力端は、前記投影結像システムの前記フィールド長と実質的に一致し、
各マイクロレンズは、前記ホモジナイザーロッドの入力端上に、対応するLEDダイの像を形成して、実質的に前記入力端全体を覆う複数のLEDダイ像を形成し、その結果、複数の仮想LED光源を前記入力端上に規定すると共に出力端において+/−2%の範囲内の照明均質性を規定し、
前記照明器は、50%超の集光効率を有する
フォトリソグラフィーシステムの照明器。 - 前記集光効率は、75%超である
請求項7に記載のフォトリソグラフィーシステムの照明器。 - 前記化学光は、360nmから450nmの波長を有する
請求項7又は8に記載のフォトリソグラフィーシステムの照明器。 - 前記ホモジナイザーロッドは、先細形状を呈し、
前記出力端は、前記入力端よりも大きな面積を有する
請求項7から9のいずれかに記載のフォトリソグラフィーシステムの照明器。 - 前記フォトリソグラフィーシステムは、レチクルを含み、
前記照明器は、リレー光学システムをさらに有し、
前記リレー光学システムは、前記ホモジナイザーロッドの出力端から照射される均質化された化学光を受光して前記レチクルを照らすように構成される
請求項7から10のいずれかに記載のフォトリソグラフィーシステムの照明器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US13/588,750 US8845163B2 (en) | 2012-08-17 | 2012-08-17 | LED-based photolithographic illuminator with high collection efficiency |
US13/588,750 | 2012-08-17 |
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JP2014039025A JP2014039025A (ja) | 2014-02-27 |
JP5806261B2 true JP5806261B2 (ja) | 2015-11-10 |
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Country Status (5)
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US (1) | US8845163B2 (ja) |
JP (1) | JP5806261B2 (ja) |
KR (1) | KR20140023234A (ja) |
CN (1) | CN103592727B (ja) |
TW (1) | TWI509370B (ja) |
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CN107923591B (zh) * | 2015-09-07 | 2021-02-19 | 大日本印刷株式会社 | 照明装置 |
US10283456B2 (en) * | 2015-10-26 | 2019-05-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography engraving machine for forming water identification marks and aligment marks |
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JP2009003186A (ja) | 2007-06-21 | 2009-01-08 | Olympus Corp | 照明装置 |
EP2238513B1 (en) | 2007-12-21 | 2011-11-02 | Carl Zeiss SMT GmbH | Illumination method |
US7544923B1 (en) | 2008-01-25 | 2009-06-09 | Xerox Corporation | LED signature elimination in specular-mode LED illumination having a light diffuser between an illuminator array and an image bearing surface |
US7568956B1 (en) | 2008-07-22 | 2009-08-04 | Wei-Jen Tseng | Led illuminator |
KR101614562B1 (ko) | 2008-07-31 | 2016-05-02 | 코닝 인코포레이티드 | 스팟이 조정되는 능동형 스팟 어레이 리소그래픽 프로젝터 시스템 |
US20100283978A1 (en) * | 2009-05-07 | 2010-11-11 | Ultratech,Inc. | LED-based UV illuminators and lithography systems using same |
KR101632317B1 (ko) | 2010-02-04 | 2016-06-22 | 삼성전자주식회사 | 2차원/3차원 전환가능한 영상 표시 장치 |
GB2478986B (en) * | 2010-03-26 | 2015-07-01 | Iti Scotland Ltd | LED arrays |
-
2012
- 2012-08-17 US US13/588,750 patent/US8845163B2/en not_active Expired - Fee Related
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2013
- 2013-07-26 JP JP2013155291A patent/JP5806261B2/ja not_active Expired - Fee Related
- 2013-08-14 TW TW102129206A patent/TWI509370B/zh not_active IP Right Cessation
- 2013-08-16 KR KR1020130097280A patent/KR20140023234A/ko not_active Application Discontinuation
- 2013-08-16 CN CN201310357355.1A patent/CN103592727B/zh not_active Expired - Fee Related
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TWI509370B (zh) | 2015-11-21 |
CN103592727A (zh) | 2014-02-19 |
KR20140023234A (ko) | 2014-02-26 |
US8845163B2 (en) | 2014-09-30 |
TW201409187A (zh) | 2014-03-01 |
US20140049978A1 (en) | 2014-02-20 |
CN103592727B (zh) | 2017-11-03 |
JP2014039025A (ja) | 2014-02-27 |
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