JP5789206B2 - Wafer inspection interface and wafer inspection apparatus - Google Patents

Description

  The present invention relates to a wafer inspection interface including a probe card and a wafer inspection apparatus.

  As a wafer inspection apparatus, for example, a probe apparatus and a burn-in inspection apparatus that perform electrical characteristic inspection on a plurality of semiconductor devices formed on a wafer are known.

  Usually, the probe apparatus includes a loader chamber for forming a transfer area for transferring a wafer and an inspection chamber for inspecting electrical characteristics of a plurality of semiconductor devices formed on the wafer, and various devices in the loader chamber and the inspection chamber. Is controlled by a control device to inspect the electrical characteristics of the semiconductor device. The inspection room places the wafer from the loader room and moves in the X, Y, Z and θ directions, a probe card disposed above the placement table, and a probe card in cooperation with the placement table And an alignment mechanism for aligning the electrodes of the plurality of semiconductor devices formed on the wafer, and the mounting table and the alignment mechanism cooperate with each other to align the wafer and the probe. After the alignment of the cards, the electrical characteristics of the plurality of semiconductor devices formed on the wafer are inspected by bringing the probes of the probe card into contact with the electrodes of the wafer.

  However, since the alignment mechanism requires a large space for arrangement, the examination room also occupies a large space, and it is necessary to secure a large installation space for the probe device. Therefore, the present inventor performs alignment between the wafer and the wafer holder that holds the wafer in an alignment chamber provided separately from the inspection chamber in the probe apparatus, and the probe card is previously aligned in the inspection chamber. It has been proposed to remove the alignment mechanism from the examination room by supporting the wafer holder using a positioning mechanism on the lifting body (see, for example, Patent Document 1).

  In this probe apparatus, the wafer of the wafer holder lifted by the elevating body in the examination room is drawn to the probe card by reducing the space formed between the wafer and the probe card.

Japanese Patent Application No. 2010-207224

  However, in the probe card, since the probe is not arranged on the entire surface facing the wafer, as shown in FIG. 9A, the portion 61 of the wafer W not in contact with the probe 60 is reduced to the decompressed space 62. As a result, the wafer W is warped and the contact pressure between the probe 60 and the electrode increases in the vicinity of the portion 61, and there is a problem that a needle mark remains on the electrode.

  Further, a seal member 64 is interposed between the wafer W and the probe card 63. When the seal member 64 is difficult to compress, only the central portion 65 of the wafer W is decompressed as shown in FIG. 9B. The wafer W is warped by being drawn into the space 62, the contact pressure between the probe 60 and the electrode is lowered in the vicinity of the seal member 64, and the electrical characteristic inspection of a plurality of semiconductor devices formed on the wafer cannot be performed accurately. There is.

  Any of the above-described problems is a problem caused by the wafer W warping to partition the two spaces having a pressure difference.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer inspection interface and a wafer inspection apparatus capable of preventing the wafer from warping when performing electrical characteristic inspection of a plurality of semiconductor devices formed on the wafer.

In order to solve the above-mentioned problems, a wafer inspection interface according to claim 1 includes a probe card in which a number of probes are arranged on a surface facing the wafer, a holding member that holds an outer periphery of the probe card, and the wafer. The first space surrounded by the holding member, the probe card and the chuck member is brought into contact with both the holding member and the chuck member by contacting the holding member and the chuck member with a sandwiched chuck member facing the probe card. A first seal member for sealing, and a second seal member for sealing a second space surrounded by the probe card and the wafer from the first space by contacting both the probe card and the wafer When a first decompression path for reducing the pressure of the first space, the second pressure reducing for reducing the pressure of the second space And a road, said second space is contained in the first space, the wafer is characterized by Rukoto disposed within said second space.

  3. The wafer inspection interface according to claim 2, wherein the chuck member opens on the wafer mounting surface on which the wafer is mounted, and the wafer mounting surface. A wafer suction path for depressurizing a gap between the placement surface and the wafer to attract the wafer to the wafer placement surface; and an opening outside the opening position of the wafer suction path on the wafer placement surface; And an open air path communicating with the air.

According to a third aspect of the present invention, there is provided the wafer inspection interface according to the first or second aspect , wherein the first pressure reducing path and the second pressure reducing path are merged.

4. wafer inspection interface description, in the claims 2 Symbol mounting wafer inspection interface of the wafer suction path has a suction annular groove provided in the wafer mounting surface, the atmosphere opening path Has an air release groove concentric with the adsorption groove, and the air release groove is provided outside the adsorption groove.

The wafer inspection interface according to claim 5 is the wafer inspection interface according to claim 2 or 4 , wherein the first pressure reducing path depressurizes the first space to -1 kPa to -50 kPa. The path is characterized in that the gap between the wafer and the wafer mounting surface is reduced to -60 kPa to -80 kPa.

Wafer inspection interface of claim 6, wherein, in the wafer inspection interface according to any one of claims 1 to 5, wherein the second sealing member is characterized by having flexibility in the compression direction.

7. wafer inspection interface description, in the wafer inspection interface according to any one of claims 1 to 6, wherein in the probe card is the second seal member recess is provided in the portion contacting It is characterized by.

The wafer inspection interface according to claim 8 is the wafer inspection interface according to any one of claims 1 to 7 , wherein the second seal member is in contact with a portion contacting the wafer and the probe card. At least one of the contact portions is inclined to the side opposite to the second space.

In order to achieve the above object, a wafer inspection apparatus according to claim 9 includes an inspection chamber for inspecting electrical characteristics of a semiconductor device formed on a wafer, and a transfer mechanism for carrying the wafer into and out of the inspection chamber. In the wafer inspection apparatus, the inspection chamber has a wafer inspection interface, and the wafer inspection interface includes a probe card in which a number of probes are arranged on a surface facing the wafer, and an outer periphery of the probe card. By holding the holding member, the trapezoidal chuck member facing the probe card across the wafer, and the holding member, the probe card, and the chuck member by contacting both the holding member and the chuck member a first sealing member for sealing a first space surrounded, the probe card and have the wafer A second sealing member for sealing the second space surrounded by said probe card and said wafer by Retomo contact from the first space, the first pressure reducing path for reducing the pressure of the first space , and a second pressure reducing path for reducing the pressure of the second space, the second space is contained in the first space, said wafer and said Rukoto disposed in said second space To do.

The wafer inspection apparatus according to claim 10 is the wafer inspection apparatus according to claim 9 , wherein the chuck member opens to the wafer placement surface on which the wafer is placed, and the wafer placement surface. A wafer adsorption path for depressurizing a gap between the wafer surface and the wafer and adsorbing the wafer to the wafer placement surface; and an opening outside the opening position of the wafer adsorption path on the wafer placement surface to communicate with the atmosphere And an open air path.

According to the present invention, the first space enclosed by the holding member, the probe card, and the chuck member, which is sealed by the first seal member, is decompressed by the first decompression path, and the wafer is contained in the first space . Since the chuck member is arranged in the second space , the chuck member is drawn to the holding member and presses the wafer against the probe card. As a result, the wafer can be in contact with the probe card without partitioning the two spaces having a pressure difference, so that it is possible to prevent the wafer from being warped when performing electrical property inspection of a plurality of semiconductor devices formed on the wafer. Can do.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows schematically the structure of the wafer inspection apparatus which concerns on embodiment of this invention, FIG. 1 (A) is a top view, FIG.1 (B) is a front view. It is sectional drawing which shows schematically the structure of the interface for wafer inspection which the inspection chamber in FIG. 1 has. FIG. 4 is an enlarged cross-sectional view of the vicinity of an outer seal ring and an inner seal ring when performing electrical characteristic inspection of each semiconductor device formed on a wafer. FIG. 4 is an enlarged cross-sectional view schematically showing a configuration in the vicinity of each seal ring in FIG. 2, FIG. 4 (A) shows the vicinity of the inner seal ring, and FIG. 4 (B) shows the vicinity of the outer seal ring. FIG. 3 is a process diagram of electrical characteristic inspection of each semiconductor device on a wafer using the wafer inspection interface of FIG. 2. FIG. 3 is a process diagram of electrical characteristic inspection of each semiconductor device on a wafer using the wafer inspection interface of FIG. 2. It is sectional drawing which shows schematically the structure of the interface for wafer inspection of the wafer inspection apparatus which concerns on another embodiment of this invention. FIG. 8 is a plan view of the chuck top in FIG. 7. FIG. 9A is a cross-sectional view schematically showing a configuration of a conventional wafer inspection interface, FIG. 9A shows a case where a portion of the wafer that is not in contact with the probe warps, and FIG. 9B shows a central portion of the wafer. Indicates the case where the

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a diagram schematically showing a configuration of a wafer inspection apparatus according to the present embodiment, FIG. 1 (A) is a plan view, and FIG. 1 (B) is a front view.

  1A and 1B, a wafer inspection apparatus 10 includes a loading / unloading area S10 for loading / unloading a wafer W from a cassette, for example, a FOUP F, in front of the wafer inspection apparatus 10; In the drawing, an alignment region S20 formed to the right of the loading / unloading region S10, a transfer region S30 for transferring the wafer W along the loading / unloading region S10 and the alignment region S20, and a wafer W formed along the transfer region S30. And an inspection area S40. In the carry-in / out area S10, the alignment area S20, the transfer area S30, and the inspection area S40, a placement mechanism 11, an alignment chamber 12, a wafer transfer mechanism 13, and an inspection chamber 14 are provided, respectively.

  As shown in FIG. 1B, the wafer transfer mechanism 13 includes a base 13A, a rotating body 13B provided on the base 13A so as to be able to rotate forward and backward via a rotating shaft, and a rotating body 13B. Two upper and lower arms 13C and 13D that reciprocate individually in one direction, an elevating mechanism 13E that raises and lowers the base 13A and arms 13C and 13D, and a moving mechanism 13F that reciprocates these mechanisms along the transport region S30. And a pick 13G (see FIG. 2) provided at the tip of the upper arm 13C.

  In the wafer inspection apparatus 10, the wafer transfer mechanism 13 transfers an uninspected wafer W from the FOUP F to the alignment chamber 12, and the alignment chamber 12 aligns the wafer W with respect to the pick 13 </ b> G of the wafer transfer mechanism 13 to transfer the wafer. The mechanism 13 transports the aligned wafer W to the inspection chamber 14. The inspection chamber 14 has a wafer inspection interface 18 which will be described later. The wafer inspection interface 18 inspects electrical characteristics of a plurality of semiconductor devices formed on the wafer W.

  Further, the wafer transfer mechanism 13 transfers the inspected wafer W from the inspection chamber 14 to the needle trace inspection device 17 provided in the needle trace inspection area S50 located on the left side of the mounting mechanism 11 in the drawing, and performs the needle trace inspection. The apparatus 17 inspects the needle trace (contact trace of the probe 25) on the electrode of each semiconductor device on the inspected wafer W, and the wafer transfer mechanism 13 again transfers the inspected wafer W to the FOUP F on the mounting mechanism 11. Carry in.

  FIG. 2 is a cross-sectional view schematically showing a configuration of a wafer inspection interface included in the inspection room in FIG.

  In FIG. 2, the wafer inspection interface 18 includes a head plate 19 made of a plate-like member disposed on the ceiling in the inspection chamber 14, a probe card 20 disposed on the lower surface of the head plate 19, and the probe card. A fixing ring 21 (holding member) that holds the outer periphery of the head 20 and fixes it to the head plate 19, a rod-like lifter 22 that is erected from the bottom of the examination chamber 14 and moves in the vertical direction in the figure, It has a table-like chuck top 23 (chuck member) installed at the top. The chuck top 23 has a convex cross section, and has a convex portion 23A that protrudes upward in the figure at the center, and a step portion 23B that surrounds the convex portion 23A and is formed one step lower than the convex portion 23A.

  Before the electrical characteristics inspection of each semiconductor device formed on the wafer W is performed, the arm 13C and the pick 13G on the wafer transfer mechanism 13 enter the inspection chamber 14, and the wafer W is moved into the probe card 20 and the chuck top 23. Position between. Therefore, the chuck top 23 faces the probe card 20 across the wafer W, in particular, the convex portion 23A faces the probe card 20, and the step portion 23B faces the fixing ring 21 surrounding the outer periphery of the probe card 20. The upper flat surface of the convex portion 23A becomes the wafer placement surface 23C.

  The chuck top 23 has an outer seal ring 24 (first seal member) disposed on the step 23B, and the outer seal ring 24 surrounds the convex portion 23A. The probe card 20 has a large number of probes (inspection needles) 25 arranged corresponding to the electrodes of the respective semiconductor devices formed on the wafer W on the surface facing the chuck top 23 (wafer W). The fixing ring 21 sandwiches and holds the inner seal ring 26 (second seal member), which is disposed so as to surround the region of the probe card 20 where the probe 25 is formed, with the probe card 20.

  When the electrical characteristics inspection of each semiconductor device formed on the wafer W is performed, the lifter 22 moves the chuck top 23 upward in the drawing to contact the fixing ring 21 via the outer seal ring 24. At this time, the wafer W is positioned on the wafer placement surface 23 </ b> C of the chuck top 23 and contacts the probe card 20 via the inner seal ring 26.

  FIG. 3 is an enlarged cross-sectional view of the vicinity of the outer seal ring and the inner seal ring when the electrical characteristic inspection of each semiconductor device formed on the wafer is performed.

  In FIG. 3, the outer seal ring 24 forms an outer space 27 (first space) in cooperation with the fixing ring 21, the chuck top 23 and the inner seal ring 26, and the outer space 27 is formed in the examination chamber 14. Seal from atmosphere. The inner seal ring 26 forms an inner space 28 (second space) in cooperation with the probe card 20 and the wafer W, and seals the inner space 28 from the outer space 27.

  The chuck top 23 has an outer pressure reducing path 29 (first pressure reducing path) that opens toward the outer space 27, and the probe card 20 and the head plate 19 have an inner pressure reducing path 30 (second pressure opening) that opens toward the inner space 28. Pressure reduction path). The outer decompression path 29 and the inner decompression path 30 are drawn out of the chuck top 23 and the head plate 19 and joined together, and are connected to the exhaust device 31. The outer decompression path 29 exhausts along the arrow direction in the figure to decompress the outer space 27, and the inner decompression path 30 exhausts along the arrow direction in the figure to decompress the inner space 28.

  When the outer space 27 is depressurized, the chuck top 23 is drawn toward the fixing ring 21. Thereby, the chuck top 23 is indirectly held by the fixing ring 21. Further, when the inner space 28 is depressurized, the wafer W is attracted to the probe card 20. As a result, the wafer W is indirectly held by the probe card 20. In the present embodiment, when the outer space 27 is depressurized, the chuck top 23 is attracted to the fixing ring 21, so that the wafer W placed on the wafer placement surface 23 </ b> C is fixed by the fixing ring 21. When the inner space 28 is further depressurized, the wafer W itself is also attracted to the probe card 20, so that the electrodes of the semiconductor devices formed on the wafer W come into contact with the probes 25 reliably.

  4 is an enlarged cross-sectional view schematically showing the configuration in the vicinity of each seal ring in FIG. 2, FIG. 4 (A) shows the vicinity of the inner seal ring, and FIG. 4 (B) shows the vicinity of the outer seal ring.

  4A, the inner seal ring 26 has a substantially T-shaped cross-sectional shape that is laid sideways, and a base portion 26A that is sandwiched between the fixing ring 21 and the probe card 20 and extends toward the probe 25. A contact portion 26B (a portion that contacts the probe card) provided at the tip of the base portion 26A and protruding toward the probe card 20, and a contact portion 26C (a portion that contacts the wafer) protruding toward the wafer W, respectively. Have

  In the inner seal ring 26, both the contact portion 26 </ b> B and the contact portion 26 </ b> C are formed to be inclined to the opposite side to the inner space 28. As will be described later, before the chuck top 23 is attracted to the fixing ring 21, only the wafer W is brought into contact with the probe card 20 and is attracted. At this time, the inner space 28 is decompressed by the inner decompression path 30, Since the opposite side of the inner seal ring 26 is the atmosphere in the examination chamber 14, the contact portion 26B and the contact portion 26C of the inner seal ring 26 are drawn toward the inner space 28 as indicated by broken lines in the figure. However, since both the contact portion 26B and the contact portion 26C are formed to be inclined to the opposite side to the inner space 28, each of the contact portion 26B and the contact portion 26C rotates around the connection portion with the base portion 26A when being drawn into the inner space 28 side. As a result, the tips of the contact portion 26B and the contact portion 26C come into stronger contact with the probe card 20 and the wafer W (see the broken line in the figure). Therefore, when drawing the wafer W to the probe card 20, even if only the inner space 28 is decompressed, sealing of the inner space 28 is not hindered.

  In the contact portion 26C, a predetermined length, for example, 1.2 mm, is secured from the connection portion with the base portion 26A to the distal end portion. In addition, a concave portion 20A is provided in a portion of the probe card 20 where the contact portion 26B abuts, and a length from the connection portion with the base portion 26A to the tip portion of the contact portion 26B, for example, 1.2 mm is secured. . Therefore, the inner seal ring 26 has a high flexibility with respect to the direction in which the wafer W is compressed when the wafer W is attracted to the probe card 20. As a result, the wafer W can be prevented from warping due to the reaction force from the inner seal ring 26.

  In FIG. 4B, the outer seal ring 24 has a substantially L-shaped cross-sectional shape that is laid down, and a base portion 24A disposed on the stepped portion 23B, and the base portion 24A is directed upward in the figure. And a projecting contact portion 24B.

  In the outer seal ring 24, the contact portion 24 </ b> B is formed to be inclined to the side opposite to the outer space 27. When the chuck top 23 is drawn toward the fixing ring 21, the outer space 27 is decompressed by the outer decompression path 29, while the opposite side of the outer seal ring 24 is the atmosphere in the examination chamber 14, and thus the outer seal ring 24. The contact portion 24B is drawn toward the outer space 27 as indicated by a broken line in the figure. However, since the contact portion 24B is formed to be inclined to the opposite side to the outer space 27, when the contact portion 24B is drawn to the outer space 27 side, the contact portion 24B rotates around the connecting portion with the base portion 24A and is drawn to the outer space 27 side. As a result, the tip of the contact portion 24B comes into stronger contact with the fixing ring 21 (see the broken line in the figure). Therefore, when the chuck top 23 is pulled toward the fixing ring 21, sealing of the outer space 27 is not hindered.

  In the contact portion 24B, a predetermined length, for example, 1.2 mm is secured from the connection portion with the base portion 24A to the distal end portion. Accordingly, the outer seal ring 24 has a high flexibility in the direction in which the chuck top 23 is compressed when the chuck top 23 is pulled toward the fixing ring 21, and the chuck top 23 is warped by receiving a reaction force from the outer seal ring 24. Can be prevented.

  Next, the electrical characteristic inspection of each semiconductor device on the wafer using the wafer inspection interface of FIG. 2 will be described.

  5 and 6 are process diagrams of electrical characteristic inspection of each semiconductor device on the wafer using the wafer inspection interface of FIG.

  First, the wafer transfer mechanism 13 carries the aligned wafer W into the inspection chamber 14, and the wafer W that has been aligned with the pick 13G is made to face the probe card 20. At this time, the wafer transfer mechanism 13 slightly moves the arm 13C to align the pick 13G with the probe card 20 (FIG. 5A). Thereby, alignment of the wafer W and the probe card 20 is performed.

  Next, the wafer transfer mechanism 13 moves the pick 13 </ b> G toward the probe card 20 to bring the wafer W into contact with the probe card 20. At this time, since the wafer W and the probe card 20 are already aligned, each probe 25 of the probe card 20 comes into contact with the electrode of each semiconductor device formed on the wafer W (FIG. 5B).

  Next, when the wafer W is brought into contact with the probe card 20 and the inner space 28 is formed by the inner seal ring 26, the probe card 20, and the wafer W, the inner decompression path 30 depressurizes the inner space 28, thereby reducing the wafer W. The probe card 20 is drawn and temporarily fixed. Thereafter, the pick 13G leaves the wafer W and leaves the inspection chamber 14 by the wafer transfer mechanism 13 (FIG. 5C).

  Next, the lifter 22 moves the chuck top 23 upward to contact the fixing ring 21. At this time, since the convex portion 23A of the chuck top 23 protrudes upward from the step portion 23B, the wafer mounting surface 23C comes into contact with the wafer W temporarily fixed to the probe card 20, and as a result, the wafer W is mounted on the wafer. It will be located on the surface 23C (FIG. 6A).

  Next, when the chuck top 23 is brought into contact with the fixing ring 21 and the outer space 27 is formed by the inner seal ring 26, the fixing ring 21, the chuck top 23, and the outer seal ring 24, the outer pressure reducing path 29 is changed to the outer space 27. The chuck top 23 is attracted to the fixing ring 21 by reducing the pressure, and the chuck top 23 is indirectly held by the fixing ring 21. At this time, the chuck top 23 drawn to the fixing ring 21 presses the wafer W positioned on the wafer placement surface 23C against the probe card 20, but the chuck top 23 has higher rigidity than the wafer W, so It can be uniformly pressed against the probe card 20.

  Further, since the outer decompression path 29 and the inner decompression path 30 are joined and connected to the exhaust device 31, when the outer space 27 and the inner space 28 are decompressed, the pressure in the outer space 27 and the pressure in the inner space 28 are the same. Can be set to a value. As a result, the inner seal ring 26 that partitions the outer space 27 and the inner space 28 and the chuck top 23 that faces either the outer space 27 or the inner space 28 can be prevented from being deformed. Thereafter, the lifter 22 moves downward in the drawing and moves away from the chuck top 23 (FIG. 6B).

  Next, a current of a predetermined value is passed from each probe 25 to the electrode of each semiconductor device to inspect the electrical characteristics of each semiconductor device, and then this inspection is terminated.

  According to the wafer inspection apparatus 10 according to the present embodiment, the outer space 27 that is sealed by the outer seal ring 24 and surrounded by the fixing ring 21, the probe card 20, and the chuck top 23 is decompressed by the outer decompression path 29, Since the wafer W is disposed in the inner space 28 surrounded by the outer space 27, the chuck top 23 is attracted to the fixing ring 21 and presses the wafer W against the probe card 20. As a result, the wafer W can come into contact with the probe card 20 without partitioning the two spaces having a pressure difference. Therefore, the wafer W is warped when an electrical characteristic inspection of a plurality of semiconductor devices formed on the wafer W is performed. Can be prevented.

  In the wafer inspection apparatus 10, the inner space 28 surrounded by the probe card 20 and the wafer W sealed by the inner seal ring 26 is decompressed by the inner decompression path 30. The wafer W alone can be drawn to the probe card 20 and temporarily fixed before the outer space 27 is formed by being brought into contact with the fixing ring 21.

  In the present embodiment, the outer seal ring 24 and the inner seal ring 26 having a substantially L-shaped or substantially T-shaped cross section are used. It may be used as a seal ring.

  Further, the chuck top 23 is disposed in each inspection chamber 14, but the wafer inspection apparatus 10 includes only one chuck top 23 at a location different from each inspection chamber 14, and the electrical characteristics of each semiconductor device on the wafer W. When performing an inspection, the chuck top 23 may be carried into the inspection chamber 14 by the wafer transfer mechanism 13 and lifted toward the fixing ring 21 by the wafer transfer mechanism 13. Thereby, the chuck top 23 and the lifter 22 can be abolished from the inspection room 14, and the size of each inspection room 14 can be further reduced.

  By the way, an electrical characteristic inspection of a semiconductor device on a wafer using a wafer inspection apparatus may be performed in a high temperature atmosphere, for example, 90 ° C. to a low temperature atmosphere, for example, −30 ° C., and for wafer inspection applied to such characteristic inspection. The chuck member of the interface incorporates a temperature control device for adjusting the temperature of the wafer. Examples of the temperature control device include an electric heater for heating and a chiller for cooling.

  In a wafer inspection interface having a chuck member with a built-in temperature control device, in order to increase the heat transfer efficiency between the wafer placement surface of the chuck member and the wafer placed on the wafer placement surface, In general, the chuck member is provided with wafer suction means for reducing the gap between the wafer and the wafer placement surface and sucking the wafer W onto the wafer placement surface. The wafer suction means is constituted by, for example, a wafer suction groove provided on the wafer mounting surface of the chuck member, and a suction device connected to the wafer suction groove via a connection channel.

  However, in the wafer inspection interface according to the above-described embodiment (see FIG. 2), the wafer is prevented from warping and the wafer W and the probe 25 of the probe card 20 are brought into close contact with each other. The outer space 27 surrounded by the probe card 20 and the chuck top 23 is held in a predetermined reduced pressure state. Therefore, when the outer space 27 and its decompression path in the embodiment of FIG. 2 are applied to a wafer inspection interface having a chuck member with a built-in temperature control device, the contact surface between the wafer and the wafer mounting surface. The following problems arise when a gap is generated in the case.

  That is, the adsorption pressure for adsorbing the wafer W to the wafer mounting surface 23C is, for example, −80 kPa, and the degree of decompression is much larger than the pressure in the outer space 27, for example, −2 kPa. Accordingly, if there is a gap in the contact surface between the wafer W and the wafer mounting surface 23C, the outer space 27 is depressurized by the depressurization for adsorbing the wafer W, so that the pressure control in the outer space 27 by the exhaust device 31 is performed. For example, the pressure in the outer space 27 is extremely reduced, and the contact pressure between the probe card 20 and the wafer W is excessively increased, and the probe 25 of the probe card 20 may be damaged.

  Since both the wafer mounting surface of the wafer and the chuck member are made of a hard member, a gap is easily generated on the contact surface. In addition, a gap may be generated due to foreign matter sandwiched between the wafer and the wafer mounting surface.

  In order to solve such a problem, the present inventor has reduced the gap between the wafer mounting surface on which the wafer is mounted and the wafer mounting surface, and the gap between the wafer and the wafer mounting surface is reduced. A chuck member having a wafer adsorption path for adsorbing a wafer to the wafer placement surface is provided outside the wafer adsorption path on the wafer placement surface, and an air release path communicating with the atmosphere is provided. When a gap is generated between the wafer and the wafer mounting surface, the atmosphere is sucked by the reduced pressure for sucking the wafer, so that the outer space 27 even if the reduced pressure for sucking the wafer leaks. The pressure is not affected.

  FIG. 7 is a sectional view schematically showing a configuration of a wafer inspection interface of a wafer inspection apparatus according to another embodiment of the present invention, and FIG. 8 is a plan view of the chuck top 23 in FIG. The wafer inspection interface 38 is basically the same in configuration and operation as the wafer inspection interface of FIG. 2 described above. Therefore, the same reference numerals are assigned to the duplicated configurations, and the description thereof is omitted. Hereinafter, the different embodiments will be described focusing on the configurations and operations different from the above embodiments.

  7 and 8, a plurality, for example, three wafer suction grooves 41a, 41b, and 41c formed concentrically are provided on the wafer placement surface 23C that is the upper plane of the convex portion 23A of the chuck top 23. . The wafer suction grooves 41a to 41c are, for example, circular grooves each having a width of 0.5 mm and a depth of 0.5 mm. For example, the same decompression flow path 43 is connected via the connection flow paths 42a to 42c having a cross section of 0.5φ. It is connected to. The decompression flow path 43 is made of, for example, a pipe having a cross section of 2.5φ and is connected to a decompression device (not shown). A wafer suction path 44 is configured by the wafer suction grooves 41 a to 41 c, the connection flow paths 42 a to 42 c and the decompression flow path 43.

  An air release groove 45 formed concentrically with the wafer adsorption groove 41c is provided outside the outermost wafer adsorption groove 41c. The air release groove 45 is connected to the air flow path 47 through the connection flow path 46. For example, the atmospheric flow path 47 penetrates the side wall surface of the stepped portion 23B of the chuck top 23 and communicates with the atmospheric air. An atmosphere release path 48 is configured by the atmosphere release groove 45, the connection channel 46, and the atmosphere channel 47. The air release groove 45 is located outside the opening position of the wafer suction groove 41c on the wafer placement surface 23C and inside the outer peripheral surface of the convex portion 23A of the chuck top 23 in contact with the outer space 27. Yes.

  Next, an electrical characteristic inspection of each semiconductor device on the wafer W using the wafer inspection apparatus having the wafer inspection interface having the above configuration will be described.

  In the present embodiment, the electrical characteristic inspection of the semiconductor device is performed in the same manner as in FIGS. 5 and 6 described above. That is, first, the wafer W is carried into the inspection chamber 14 by the wafer transfer mechanism 13, the wafer W and the probe card 20 are aligned, and then the wafer W is brought into contact with the probe card 20, whereby the probe card 20. Each probe 25 is brought into contact with an electrode of each semiconductor device formed on the wafer W.

  Next, the inner space 28 formed between the inner seal ring 26, the probe card 20, and the wafer W is reduced by contact between the wafer W and the probe card 20, and the wafer W is temporarily fixed to the probe card 20. After the wafer W is temporarily fixed, the wafer transfer mechanism 13 leaves the inspection chamber, and then the lifter 22 (see FIG. 6) moves upward to bring the chuck top 23 into contact with the fixing ring 21. At this time, the convex portion 23A of the chuck top 23 abuts on the wafer W temporarily fixed to the probe card 20, and the wafer W is supported by the wafer mounting surface 23C which is an upper plane of the convex portion 23A.

  Next, when the chuck top 23 comes into contact with the fixing ring 21, the outer space 27 formed between the inner seal ring 26, the fixing ring 21, the chuck top 23, and the outer seal ring 24 is decompressed, and the chuck top 23 is fixed. The wafer W is attracted to the ring 21, and the wafer W is evenly pressed against the probe card 20 by the chuck top 23.

  At this time, the outer space 27 and the inner space 28 are decompressed by the same exhaust device 31 and set to the same value. Therefore, the inner seal ring 26 and the chuck top 23 are not deformed.

  Next, the wafer W and the wafer placement surface 23 </ b> C are separated by the wafer suction path 44 including the wafer suction grooves 41 a to 41 c, the connection flow paths 42 a to 42 c and the decompression flow path 43 that open to the wafer placement surface 23 </ b> C of the chuck top 23. The gap is reduced to, for example, −80 kPa, and the wafer W is attracted to the wafer placement surface 23C.

  At this time, even if a gap is generated on the contact surface between the wafer W and the wafer mounting surface 23C due to the fact that both are hard members or foreign matter is sandwiched between them, Since the air release groove 45 communicating with the atmosphere is provided, the pressure reduction by the wafer suction path 44 sucked along the arrow 44a is caused in the air release path 48 via the gap between the wafer W and the wafer placement surface 23C. The air flowing along the arrow 48a is sucked. Accordingly, the pressure in the outer space 27 is well controlled by the exhaust device 31 without being adversely affected by the reduced pressure for adsorbing the wafer W onto the wafer placement surface 23C.

  After adsorbing the wafer W to the wafer mounting surface 23C, the wafer W is adjusted to a predetermined temperature, for example, 90 ° C. or −30 ° C. using a temperature control device (not shown) built in the chuck top 23, and then A current of a predetermined value is supplied from each probe 25 of the probe card 20 to the electrode of each semiconductor device to perform an electrical characteristic test at a desired temperature, and this test is completed.

  According to the present embodiment, the atmosphere is opened to the outer periphery of the wafer suction grooves 41 a to 41 c formed on the wafer placement surface 23 </ b> C of the chuck top 23 through the connection channel 46 and the atmosphere channel 47. Since the groove 45 is provided, even if a gap is generated between the wafer W and the wafer placement surface 23C due to the fact that both are hard members or foreign matter is sandwiched between them, the pressure reduction caused by the gap The air leaks through the atmosphere opening path 48. Therefore, even if a gap is generated between the wafer W and the wafer placement surface 23C, the pressure in the outer space 27 is not adversely affected by the reduced pressure for adsorbing the wafer W to the wafer placement surface 23C, and the outer space 27 The pressure of 27 is controlled well and stably by the evacuation device 31, so that the adverse effect of the outer space 27 being depressurized more than necessary, for example, the wafer W is applied to the probe 25 of the probe card 20 with a pressure more than necessary. It is possible to prevent contact and damage.

  In the present embodiment, the pressure in the outer space 27 and the inner space 28 in which the wafer W is disposed is, for example, −1 kPa to −50 kPa, and the pressure when the wafer W is attracted to the wafer placement surface 23C is, for example, -60 kPa to -80 kPa.

  In the present embodiment, the atmospheric flow path 47 in the atmospheric release path 48 and the decompression flow path 43 in the wafer adsorption path 44 are formed on the same cross section (see FIG. 7), but the present invention is not limited to this. Alternatively, the atmospheric flow path 47 and the decompression flow path 43 may be shifted by a predetermined angle along the circumferential direction of the chuck top 23, and thereby displayed on different cross sections.

  In the present embodiment, the wafer suction grooves are configured by the three wafer suction grooves 41a to 41c formed concentrically. However, the number of wafer suction grooves is not particularly limited, and may be one or two or There may be four or more.

  In the present embodiment, the pressure in the outer space 27 and the inner space 28 is adjusted by the number of probes 25 in the probe card 20. That is, the pressure in the outer space 27 and the inner space 28 is such that the pressing force when each probe 25 in the probe card 20 abuts on the electrode of the semiconductor device on the wafer W is, for example, 5 to 10 grams. Adjusted.

Here, assuming that the number of probes 25 in the probe card 20 is, for example, 3000, the total pressing force with which the probe card 20 presses the wafer W is, for example,
5 (g) x 3000/1000 = 15 (kg)
The pressures in the outer space 27 and the inner space 28 are adjusted so that

Assuming that the probe card 20 has a disk shape of 330 mmφ, and determining the set pressure in the outer space 27 and the inner space 28 where the total pressing force is 15 (kg),
15 (kgf) × 9.8 / (π × (330/2) ² ) = 0.172 (MPa)
= 1.72 (kPa).

  Therefore, in this other embodiment, the pressure in the outer space 27 and the inner space 28 is controlled to, for example, -1.72 (kPa).

  However, the weight of the probe card 20 and the load necessary for deformation of the inner seal ring 26 and the outer seal ring 24 may be added to 15 kg as correction values.

  As mentioned above, although this invention was demonstrated in detail using embodiment, this invention is not limited to these embodiment.

W wafer 14 inspection chamber 18 wafer inspection interface 20 probe card 21 fixing ring 23 chuck top 24 outer seal ring 24B contact portion 25 probe 26 inner seal rings 26B and 26C contact portion 27 outer space 28 inner space 29 outer decompression path 30 inner decompression path Paths 41a to 41c Wafer suction groove 44 Wafer suction path 45 Atmospheric release groove 48 Atmospheric release path

Claims (10)

A probe card in which a large number of probes are arranged on the surface facing the wafer;
A holding member for holding the outer periphery of the probe card;
A table-like chuck member facing the probe card across the wafer;
A first seal member that seals a first space surrounded by the holding member, the probe card, and the chuck member by contacting both the holding member and the chuck member;
A second seal member that seals a second space surrounded by the probe card and the wafer from the first space by contacting both the probe card and the wafer;
A first decompression path for decompressing the first space;
A second decompression path for decompressing the second space ,
The second space is the encapsulated in the first space, the wafer is the second disposed in the space wafer inspection interface, wherein Rukoto.   The chuck member opens to the wafer placement surface on which the wafer is placed, and the wafer placement surface, and the gap between the wafer placement surface and the wafer is reduced to place the wafer on the wafer placement surface. The wafer inspection path according to claim 1, further comprising: a wafer adsorption path to be adsorbed; and an air release path that opens outside the opening position of the wafer adsorption path on the wafer placement surface and communicates with the atmosphere. interface. 3. The wafer inspection interface according to claim 1, wherein the first decompression path and the second decompression path merge. The wafer suction path has an annular suction groove provided on the wafer mounting surface, the atmosphere release path has an atmosphere release groove concentric with the suction groove, and the atmosphere release groove is the suction groove. claim 2 Symbol mounting wafer inspection interface of, characterized in that provided outside the groove. The first decompression path depressurizes the first space to -1 kPa to -50 kPa, and the wafer suction path depressurizes a gap between the wafer and the wafer mounting surface to -60 kPa to -80 kPa. The wafer inspection interface according to claim 2 or 4 , characterized in that: It said second sealing member is a wafer inspection interface according to the deviation of the claims 1 to 5, characterized in that it has flexibility in the compression direction. The second seal member for wafer inspection interface according to any one of claims 1 to 6, characterized in that the recess is in contact with portions are provided in the probe card. Said second sealing member, according to claim 1 to 7, characterized in that inclined on the side opposite to the at least one second space portion abutting the abutting portion and the probe card to the wafer The wafer inspection interface according to any one of the above. In a wafer inspection apparatus comprising an inspection room for inspecting electrical characteristics of a semiconductor device formed on a wafer, and a transport mechanism for carrying the wafer into and out of the inspection room,
The inspection room has a wafer inspection interface;
The wafer inspection interface includes a probe card in which a large number of probes are arranged on a surface facing the wafer, a holding member that holds the outer periphery of the probe card, and a trapezoidal shape that faces the probe card across the wafer. A chuck member, a first seal member that seals a first space surrounded by the holding member, the probe card, and the chuck member by contacting both the holding member and the chuck member , and the probe card And a second sealing member that seals the second space surrounded by the probe card and the wafer from the first space by contacting the wafer and the wafer, and a first pressure reducing the first space. and decompression path, and a second pressure reducing path for reducing the pressure of the second space, the second space is the first Encapsulated in the space, the wafer is a wafer inspection apparatus according to claim Rukoto disposed within said second space. The chuck member opens to the wafer placement surface on which the wafer is placed, and the wafer placement surface, and the gap between the wafer placement surface and the wafer is reduced to place the wafer on the wafer placement surface. The wafer inspection apparatus according to claim 9 , further comprising: a wafer suction path to be sucked; and an air release path that opens to an outside of the wafer suction path on the wafer placement surface and communicates with the atmosphere. .

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