JP5783236B2 - Sensor element module - Google Patents

Description

  The present invention relates to a sensor element module on which a sensor element chip is mounted, and more particularly to a sensor element module suitable for miniaturization thereof.

  In recent years, many portable electronic devices such as cellular phones and portable PCs include an imaging input unit. The imaging input unit is mainly composed of a solid-state imaging element chip, which is a representative sensor element chip, and a wiring board and a lens unit on which peripheral components are mounted. In such an imaging input unit of a portable electronic device, it is generally required that the imaging input unit can be accommodated in a more compact space and can cope with imaging with more pixels. In recent years, solid-state imaging device chips with 5 million pixels or 8 million pixels have been put on the market. The wiring board is designed to be miniaturized by multilayering, high-density layout of patterns, built-in components, and the like.

  A publicly known example of a module component that functions as an imaging input unit is disclosed in Japanese Patent Application Laid-Open No. 2004-120615. A module component of this disclosure includes a wiring board, a semiconductor chip that is a peripheral component of a solid-state imaging device chip that is flip-connected thereon, and a solid-state imaging device chip that is stacked on the semiconductor chip and provided face-up And passive element components provided on the wiring board on the outer periphery of these.

JP 2004-120615 A

  The present invention has been made in consideration of the above-described circumstances, and an object of the present invention is to provide a sensor element module capable of reducing the thickness direction in a sensor element module on which a sensor element chip is mounted. .

  In order to solve the above problems, a sensor element module according to one embodiment of the present invention includes a first insulating layer that is an insulating layer having an opening, and the opening of the first insulating layer. And a conductor pattern sandwiched between the first insulating layer and the second insulating layer, and a second insulating layer which is an insulating layer positioned in a laminated form with respect to the first insulating layer. And the second insulating layer so that the functional surface is viewed from the opening of the first insulating layer and is covered with the second insulating layer except for the functional surface without a gap. A sensor element chip that is embedded in a layer and is flip-connected on the conductor pattern via a protruding electrode; and the sensor element chip and the first insulating layer so as to include the protruding electrode inside An adhesive resin provided between the first insulating layer and the second insulating layer. Characterized in that the said functional face of the sensor element chip is an insulating layer containing a reinforcing material opposite the surface opposite side.

  That is, the sensor element module is configured to suppress the overall size in the thickness direction by embedding the sensor element chip in the second insulating layer. Here, in order to exhibit the function of the sensor element chip, the functional surface of the sensor element chip faces the outer space through the opening of the first insulating layer. And the 2nd insulating layer which has embed | buried the sensor element chip contains the reinforcing material facing the surface on the opposite side to the functional surface of a sensor element chip. This reinforcing material can counteract the bending force applied to the sensor element chip, and despite the fact that the overall size in the thickness direction is suppressed, it ensures rigidity as a module and increases its practicality. .

  ADVANTAGE OF THE INVENTION According to this invention, the sensor element module which can reduce the thickness direction in the sensor element module carrying a sensor element chip can be provided.

1 is a cross-sectional view schematically showing a configuration of a sensor element module according to an embodiment of the present invention. Process drawing which shows a part of manufacturing process of the sensor element module shown in FIG. FIG. 5 is a process chart schematically showing another part of the manufacturing process of the sensor element module shown in FIG. 1 in cross section. FIG. 10 is a process diagram schematically showing still another part of the manufacturing process of the sensor element module shown in FIG. 1 in cross section. Sectional drawing which shows typically the structure of the sensor element module which concerns on another embodiment of this invention. Process drawing which shows a part of manufacturing process of the sensor element module shown in FIG. 5 typically in cross section. FIG. 6 is a process chart schematically showing another part of the manufacturing process of the sensor element module shown in FIG. 5 in cross section. Sectional drawing which shows typically the structure of the sensor element module which concerns on another embodiment of this invention.

As an embodiment of the present invention, the second insulating layer, wherein a position in the plan view of the level sensor device chip is located, the second in the region other than the region except for the sensor element chip is embedded region A reinforcing material may be contained. When the second insulating layer contains the second reinforcing material as described above, the sensor element module can have higher rigidity. In other words, the second reinforcing material is provided at a position in the stacking direction level different from that of the reinforcing material arranged on the sensor element chip, and is arranged so as not to interfere with each other. The reason why the second reinforcing material is removed in the region where the sensor element chip is embedded is to prevent the second reinforcing material from colliding with the sensor element chip and deteriorating reliability during the manufacturing lamination process. Because.

  Here, it can be assumed that a wiring layer is not provided between the reinforcing material of the second insulating layer and the second reinforcing material. This is a configuration for further reducing the thickness of the sensor element module.

  As an embodiment, a second conductor pattern provided on a surface of the second insulating layer opposite to the side facing the first insulating layer, and the second insulating layer The axis of the axis is formed between the surface of the conductor pattern and the surface of the second conductor pattern, and is made of a conductive composition and coincides with the direction of penetration. And an interlayer connection body having a shape whose diameter is changed. This aspect is appropriate when a thin sensor element chip is used as an embedded sensor element chip. That is, the interlayer connection body having a height higher than that of the sensor element chip is used to electrically connect the conductor patterns above and below the sensor element chip. In other words, the sensor element chip is usually located between conductor patterns that are vertically adjacent to each other, and even if the sensor element chip is embedded, the module is thin.

  Here, the interlayer connection body may be thicker on the second conductor pattern side than on the conductor pattern side. An interlayer connector made of a conductive composition and having a shape that has an axis coinciding with the penetrating direction and whose diameter changes in the direction of the axis is, for example, a paste-like conductive composition on a surface to be printed. It is derived from a screen-printed conical shape. In this case, if the second conductive pattern surface on which the sensor element chip is not positioned is selected as the surface to be printed, there is no interference factor and printing becomes smoother. Accordingly, this results in a thicker shape on the second conductor pattern side than the first conductor pattern side as an interlayer connection.

  Further, as an embodiment, the wiring board may further include a wiring layer provided between the reinforcing material of the second insulating layer and the second reinforcing material. In this case, by adding a wiring layer to form a multilayer, a module having a more complicated conductive path can be added to increase the added value.

  As an embodiment, the sensor element chip may be a solid-state imaging element chip, and a light receiving portion may be provided on the functional surface of the sensor element chip. It is a concrete aspect as an application of a sensor element module. Here, the lens unit may further include a lens unit including a lens provided to face the light receiving portion of the solid-state imaging device chip. Adding a lens unit can increase added value. Further, it can be supplied to the market as a module assembled so that the lens is arranged at an appropriate position with respect to the light receiving portion of the solid-state imaging device chip.

  As an embodiment, the sensor element chip may be a piezoelectric conversion element chip or a MEMS chip. This is also a specific aspect as an application of the sensor element module. By incorporating a piezoelectric conversion element chip or a MEMS chip, for example, it can be used as a module such as a barometric pressure detector, a microphone, a sound (ultrasonic wave) receiver / transmitter.

  Based on the above, embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing a configuration of a sensor element module according to an embodiment of the present invention. As shown in FIG. 1, this sensor element module has insulating layers 11, 12, 13, and 14, wiring layers (wiring patterns, conductor patterns) 21, 22, 23, and 24 (= total 4). Layer), interlayer connector 31, 32, 33, sensor element chip 41, protruding electrode 51, adhesive resin 52, and solder resists 61, 62.

  In summary, the sensor element module is configured to suppress the overall size in the thickness direction by embedding the sensor element chip 41 in the insulating layer 12. Here, in order to exhibit the function of the sensor element chip 41, the functional surface of the sensor element chip 41 faces the outer space through the opening 11 o of the insulating layer 11.

  The sensor element chip 41 is, for example, a solid-state imaging element chip. As another example of a chip having a functional surface that should face an outside space, a piezoelectric conversion element chip or a MEMS chip may be used. In these cases, for example, a module such as a barometric pressure detector, a microphone, and a sound (ultrasonic wave) receiver / transmitter can be used. Even in the case of these modules, the same advantages as those described below can be obtained. Hereinafter, the sensor element chip 41 will be described as a sensor element chip (image sensor module) using a solid-state image sensor chip.

  On the functional surface of the sensor element chip 41, a light receiving portion 41a in which photoelectric conversion elements are integrated and formed in an array is provided. Further, an area (non-light receiving portion) in which circuits for controlling and driving each element of the light receiving portion 41a are integrated is also secured on the functional surface. The light receiving part 41a is located at substantially the center of the functional surface, and the non-light receiving part is located in a frame shape surrounding the light receiving part 41a in plan view.

  A pad (not shown) that is a terminal of the sensor element chip 41 is provided in the vicinity of the outer end portion of the non-light receiving portion. A protruding electrode 51 is formed on the pad, and the sensor element chip 41 is flip-connected on the land by the wiring layer 22 via the protruding electrode 51. In order to reinforce this flip connection, an adhesive resin 52 is provided between the sensor element chip 41 and the insulating layer 11 so as to include the protruding electrode 51 therein. The sensor element chip 41 is reduced in thickness (for example, about 50 μm to 80 μm) by, for example, a back grinding method as part of further reducing the thickness of the module.

  The wiring layers 21 and 24 are wiring patterns provided on both sides of the module, and various electric / electronic components (not shown) necessary as the module can be mounted thereon, or the module can be mounted on another board. Solder balls (not shown) for mounting on can be attached. On both surfaces of the wiring layers 21 and 24 except for the land portions where solder (not shown) is to be placed, the solder resist 61 and 62 which functions to serve as a protective layer after the solder melted at the time of soldering is fixed to the land portions. A layer is formed (thickness is, for example, about 20 μm). A Ni / Au plating layer (not shown) having high corrosion resistance may be formed on the surface layer of the land portion.

  Each of the wiring layers 22 and 23 is an inner wiring layer, and in order, the insulating layer 11 is between the wiring layer 21 and the wiring layer 22, and the insulating layers 12 and 13 are between the wiring layer 22 and the wiring layer 23. The insulating layer 14 is located between the wiring layer 23 and the wiring layer 24 and separates the wiring layers 21 to 24. Each of the wiring layers 21 to 24 is made of a metal (copper) foil having a thickness of about 9 μm to 18 μm, for example. On the land formed by the wiring layer 22, the sensor element chip 41 is flip-connected through the protruding electrode 51 as described above.

  As shown in the drawing, each of the insulating layers 11 to 14 is composed of a rigid insulating resin (for example, epoxy resin) and a reinforcing material (for example, glass cloth) that reinforces the resin. However, the reinforcing material 12a of the insulating layer 12 does not exist in the region where the sensor element chip 41 is embedded. This is because a position corresponding to the embedded sensor element chip 41 is originally an opening of the insulating layer 12 and provides a space for embedding the sensor element chip 41. Thereafter, the insulating layers 12 and 13 (precursors thereof) are deformed or entered so as to fill the opening for the sensor element chip 41, and there is no space to be a gap inside.

  By providing a reinforcing material to each of the insulating layers 11 to 14, it is possible to obtain sufficient rigidity although the sensor element module is thinned. In particular, the reinforcing material 13a of the insulating layer 13 on the back surface (the surface opposite to the functional surface) of the sensor element chip 41 can directly counter the bending force applied to the sensor element chip 41, and the thickness direction. Despite restraining the overall size of the module, the module has secured rigidity and enhanced practicality.

  The thicknesses of the insulating layers 11 to 14 are, for example, about 30 μm to 70 μm for the insulating layer 11, about 70 μm to 100 μm for the insulating layer 12, about 40 μm to 50 μm for the insulating layer 13, and about 30 μm to 70 μm for the insulating layer 14. It can be. With the thickness of each of the insulating layers 11 to 14, a total thickness of about 250 μm can be realized as a total thickness of the module on which the sensor element chip 41 is mounted.

  The wiring layer 21 and the wiring layer 22 can be conducted by an interlayer connector 31 that is sandwiched between the surfaces of the patterns and penetrates the insulating layer 11. Similarly, the wiring layer 22 and the wiring layer 23 can be conducted by an interlayer connector 32 that is sandwiched between the surfaces of the patterns and penetrates the insulating layers 12 and 13. The wiring layer 23 and the wiring layer 24 can be conducted by an interlayer connector 33 that is sandwiched between the surfaces of the patterns and penetrates the insulating layer 14.

  Each of the interlayer connectors 31, 32, and 33 is derived from a bump formed by screen printing of a conductive composition, and depends on the manufacturing process. Direction). The diameter is thick, for example, 150 μm for the interlayer connectors 31 and 33 and 220 μm for the interlayer connector 32. These interlayer connectors 31, 32, and 33 can be provided in a small area with high density, and can contribute to finer processing.

  In this embodiment, as one viewpoint, the embedded sensor element chip 41 is thin and has an interlayer connector 32 having a slightly taller dimension than the thin chip 41, and is located above and below the chip 41. It can be said that the wiring patterns 22 and 23 are electrically connected. In other words, the chip 41 is positioned between the wiring patterns 22 and 23 that are positioned so as to be overlapped with a small interval in the vertical direction, and it is indicated that the thickness of the module is thin even if the chip 41 is embedded.

  The interlayer connector 32 is thicker on the wiring pattern 23 side than on the wiring pattern 22 side. As described above, the interlayer connection body 32 is derived, for example, from a paste-like conductive composition that is formed into a conical shape by screen printing on a printing surface. Here, as the surface to be printed is selected on the surface of the wiring pattern 23 where the chip 41 is not located, since there is no interference factor and printing is easier, the interlayer connection body 32 is connected to the wiring pattern 23 from the wiring pattern 22 side. It is thicker on the side.

  Further, since the insulating layer 12 contains the reinforcing material 12a as a plan view position except for the region where the chip 41 is embedded, the module has higher rigidity than the case where only the reinforcing material 13a is provided around the chip 41. You can have it. The reinforcing member 12a is provided at a position in the stacking direction level different from that of the reinforcing member 13a disposed on the chip 41, and is arranged so as not to interfere with each other. As described above, it goes without saying that the reinforcing material included in the insulating layers 11 and 14 also contributes to improving the rigidity as a module.

  Next, the manufacturing process of the sensor element module shown in FIG. 1 will be described with reference to FIGS. 2 to 4 are process diagrams schematically showing in cross section a part of the manufacturing process of the sensor element module shown in FIG. In these figures, the same or equivalent components as those shown in FIG.

  It demonstrates from FIG. FIG. 2 shows a manufacturing process of a portion centering on the insulating layer 11 in each configuration shown in FIG. First, as shown in FIG. 2 (a), a paste-like conductive composition that becomes the interlayer connector 31 is formed on a metal foil (electrolytic copper foil) 22A having a thickness of, for example, 9 μm (˜18 μm) by screen printing, for example. It is formed in a substantially conical bump shape (bottom diameter: 150 μm, height: 160 μm, for example). This conductive composition is obtained by dispersing fine metal particles such as silver, gold and copper or fine carbon particles in a paste-like resin. For convenience of explanation, printing is performed on the lower surface of the metal foil 22A, but it may be printed on the upper surface (the following drawings are also the same). After the interlayer connector 31 is printed, it is dried and cured.

  Next, as shown in FIG. 2B, an FR-4 prepreg 11A having a thickness of, for example, nominally 70 μm (˜30 μm) is laminated on the metal foil 22A, and the interlayer connector 31 is penetrated. Make it exposed. At the time of exposure or thereafter, the tip thereof may be crushed by plastic deformation (in any case, the shape of the interlayer connection body 31 has an axis that coincides with the stacking direction, and the diameter changes in the axial direction). Subsequently, as shown in FIG. 2 (c), a metal foil (electrolytic copper foil) 21A is laminated on the prepreg 11A, and the whole is integrated by pressing and heating. At this time, the metal foil 21A is in electrical continuity with the interlayer connector 31, and the prepreg 11A is completely cured to become the insulating layer 11.

  Next, as shown in FIG. 2D, the metal foils 21A and 22A on both sides are subjected to patterning by, for example, well-known photolithography, and the wiring including the wiring pattern 21 and the land for connecting the sensor element chip 41 is provided. Each pattern 22 is processed. Subsequently, an opening 11o (size is, for example, 1 mm square to 2 mm square) for exposing the functional surface of the sensor element chip 41 (light receiving portion 41a) to the outside is formed on the insulating layer 11 by, for example, drilling or router processing. Use to form.

  Next, as shown in FIG. 2E, an uncured adhesive resin 52A is applied to a predetermined position on the insulating layer 11 (position along the edge of the opening 11o) using, for example, a dispenser. During the above, on the sensor element chip 41 side, the protruding electrode 51 (made of gold, for example) is previously formed in a stud shape on a terminal pad (not shown). Then, the sensor element chip 41 with the protruding electrode 51 is positioned and pressed against the land formed by the wiring layer 22 using, for example, a flip chip bonder (FIG. 2F). Here, the size of the sensor element chip 41 is, for example, about 0.2 mm longer on each side than the size of the opening 11o. After the pressure welding, a heating step is performed to improve the connection strength and to cure the adhesive resin 52A.

  As described above, as shown in FIG. 2 (f), the opening 11 o except the light receiving portion 41 a of the sensor element chip 41 is formed in the insulating layer 11, and the sensor element chip 41 is formed on the land by the wiring layer 22 by the protruding electrode 51. The laminated material 1 in a connected state is obtained. A subsequent process using the laminated material 1 will be described with reference to FIG.

  Next, a description will be given with reference to FIG. FIG. 3 shows a manufacturing process of a portion around each of the insulating layers 12, 13, and 14 in each configuration shown in FIG. First, what is shown in FIG. 3 (a) is a material obtained by a process similar to that shown in FIGS. 2 (a) to 2 (d) (however, as shown in FIG. Absent). That is, the wiring layer 24, the insulating layer 14, the interlayer connector 33, and the wiring layer 23 correspond to the wiring layer 21, the insulating layer 11, the interlayer connector 31, and the wiring layer 22 in FIG.

  Next, as shown in FIG. 3B, a paste-like conductive composition to be the interlayer connection body 32 is formed in a substantially conical bump shape (bottom diameter, for example, bottom surface) by, for example, screen printing at a predetermined position on the wiring layer 23. 220 μm and a height of, for example, 200 μm). This conductive composition may be the same as that used in the interlayer connector 31. After the interlayer connector 32 is printed, it is dried and cured. The formation position accuracy of the interlayer connection body 32 with respect to the wiring layer 23 is almost never deteriorated after the printing on the wiring layer 23 at this time.

  Next, as shown in FIG. 3C, a prepreg 13A of FR-4 having a thickness of, for example, 40 μm (˜50 μm) and a prepreg 12A of FR-4 having a nominal 70 μm (˜100 μm) are laminated on the wiring layer 23. Then, the interlayer connector 32 is penetrated so that its head is exposed. At the time of exposure or thereafter, the tip thereof may be crushed by plastic deformation (in any case, the shape of the interlayer connector 32 has an axis that coincides with the stacking direction, and the diameter changes in the axial direction). The material obtained as described above is referred to as a laminated material 2.

  Note that, before the prepregs 13A and 12A shown in FIG. 3C are stacked, an opening 12o having a size for accommodating the sensor element chip 41 is formed in advance for the prepreg 12A. The reinforcing member 12a included in the prepreg 12A due to the formation of the opening 12o is also removed at the opening 12o as illustrated. Such removal of the reinforcing material 12a is preferable in order to prevent the occurrence of stress that would lead to breakage by avoiding hitting at the time of stacking on the embedded sensor element chip 41.

  Next, a description will be given with reference to FIG. FIG. 4 is a diagram showing an arrangement relationship in which the laminated materials 1 and 2 obtained above are laminated. Laminate materials 1 and 2 are arranged in the arrangement as shown in FIG. 4 and pressed and heated by a press. Thereby, the prepregs 12A and 13A are completely cured, and the whole is laminated and integrated. At this time, due to the fluidity of the prepregs 12 </ b> A and 13 </ b> A obtained by heating, the prepregs 12 </ b> A and 13 </ b> A are deformed or enter the space around the sensor element chip 41 and no gap is generated. Further, the interlayer connector 32 is electrically connected to the wiring layer 22.

  After the stacking step shown in FIG. 4, a sensor element module as shown in FIG. 1 can be obtained by forming layers of solder resists 61 and 62 having a predetermined pattern on both upper and lower surfaces.

  As a modification, for the interlayer connectors 31, 32, 33, in addition to those derived from the conductive bumps obtained by printing the conductive composition described above, for example, metal bumps formed by metal plate etching, conductive composition filling It is also possible to appropriately select and employ a connection body obtained from the above, a conductor bump formed by plating, or the like. Alternatively, a well-known interlayer connector can be provided by forming a through hole and plating a conductive layer on the inner wall thereof.

  Further, the outer wiring layers 21 and 24 may be obtained by patterning a metal foil after the last lamination step shown in FIG. Further, as the reinforcing members 12a, 13a, etc., besides a glass cloth, an aramid cloth, a glass nonwoven fabric, an aramid nonwoven fabric, or the like can be used.

  Further, as a modification of the module shown in FIG. 1, a configuration in which the insulating layer and the wiring layer are reduced by one layer can be considered. Specifically, the insulating layer 14 and the wiring layer 24 are omitted. In order to form a module having such a configuration, a metal foil is prepared instead of the double-sided plate as shown in the step shown in FIG. 3A, and then in the step shown in FIG. This is possible if the interlayer connector 32 is printed and formed on the metal foil, and then the process proceeds as described.

  Next, a sensor element module according to another embodiment of the present invention will be described with reference to FIG. FIG. 5 is a cross-sectional view schematically showing a configuration of a sensor element module according to another embodiment. In the figure, the same or equivalent components as those already described are denoted by the same reference numerals. The description is omitted unless there is a matter to add to that portion.

  The sensor element module of this embodiment includes an insulating layer 15 (containing a reinforcing material 15a), wiring layers (wiring patterns) 25 and 26, and a through-hole conductor 323 in addition to the constituent elements shown in FIG. Have. Furthermore, the interlayer connector 32 shown in FIG. 1 is changed to an interlayer connector 321 and 322 instead.

  An outline of the difference of this embodiment from the embodiment shown in FIG. 1 is as follows. In this sensor element module, a sensor element chip 41A (having a light receiving portion 41Aa) thicker than the sensor element chip 41 in FIG. 1 is embedded. The reason why the sensor element chip 41A is thick is that the area as a plane is relatively large (for example, 7 mm square to 8 mm square), and a thickness of several tens of μm itself cannot secure the strength. Therefore, the thickness can be secured by itself, for example, a thickness of several hundred μm. As a result, the configuration of the module on which the sensor element chip 41A is mounted is changed so as to ensure a sufficient thickness region for embedding the sensor element chip 41A. Secondaryly, the number of wiring layers as a module is increased, and it is possible to cope with a more complicated circuit configuration.

  FIG. 6 is a process diagram schematically showing a part of the manufacturing process of the sensor element module shown in FIG. 5 in cross section, and shows the manufacturing process of the part centering on the insulating layers 15 and 12. In FIG. 6, the same or equivalent components as those already described are denoted by the same reference numerals.

  First, as shown in FIG. 6A, for example, an FR-4 insulating layer 15 (reinforcing material 15a) having a thickness of 300 μm, for example, metal foils (electrolytic copper foils) 25A and 26A having a thickness of 18 μm are laminated on both sides. And a through-hole 72 for forming a through-hole conductor is formed at a predetermined position.

  Next, electroless plating and electrolytic plating are performed to form a through-hole conductor 323 on the inner wall of the through-hole 72 as shown in FIG. Subsequently, as shown in FIG. 6C, the metal foils 25 </ b> A and 26 </ b> A are predeterminedly patterned using well-known photolithography to form wiring layers 25 and 26.

  Next, as shown in FIG. 6 (d), conductive bumps (bottom diameter: 200 μm, height: 160 μm, for example) that become interlayer connectors 322 are placed at predetermined positions on the wiring layer 25 with a paste-like conductive composition ( It is formed by screen printing as described above. 6E, an FR-4 prepreg 12A (nominal thickness, for example, 100 μm) to be the insulating layer 12 is laminated on the wiring layer 25 side using a press.

  In this lamination step, the head of the interlayer connector 322 is made to penetrate the prepreg 12A. In addition, the broken line of the head part of the interlayer connection body 322 in FIG.6 (e) shows that the case where the head part is plastically deformed and crushed at this stage can be both. By this step, the wiring layer 25 is located by sinking to the prepreg 12A side.

  After the prepreg 12A is laminated on the insulating layer 15, as shown in FIG. 6 (e), an opening 71 for the sensor element chip 41A is formed at a predetermined position of the insulating layer 15 and the prepreg 12A by, for example, drilling or router processing. . The material obtained as described above is referred to as a laminated material 3.

  FIG. 7 is a process diagram schematically showing a cross-section of another part of the manufacturing process of the sensor element module shown in FIG. 5, and is a diagram showing an arrangement relationship for laminating the laminated material 3 and the like obtained above. is there. In FIG. 7, the same reference numerals are given to the same or equivalent components as those already described.

  The laminated material 2A on the upper side shown in FIG. 7 is obtained by slightly modifying the laminated material 2 shown in FIG. That is, instead of the interlayer connection body 32, an interlayer connection body 321 having a slightly lower height is formed, and the interlayer connection body 321 penetrates the prepreg 13A. The prepreg 12A is not laminated on the prepreg 13A. Further, the laminated material 1A on the lower side of the figure has a configuration in which the mounted sensor element chip 41A is replaced with a thicker one than the laminated material 1 shown in FIG. Here, the opening 11o of the insulating layer 11 is, for example, a size shorter by about 1 mm to 2 mm in side length than the size of the sensor element chip 41A. Other configurations are self-evident due to the correspondence of the reference numerals in the drawings already described.

  Each of the laminated materials 1A, 3 and 2A is arranged in a layout as shown in FIG. Thereby, the prepregs 12A and 13A are completely cured, and the whole is laminated and integrated. At this time, due to the fluidity of the prepregs 12A and 13A obtained by heating, the prepregs 12A and 13A are deformed into the space around the sensor element chip 41A and the space inside the through-hole conductor 323, and no gap is generated. The wiring layers 22 and 26 are electrically connected to the interlayer connectors 322 and 321, respectively.

  After the lamination step shown in FIG. 7, the sensor element module as shown in FIG. 5 can be obtained by forming the layers of solder resists 61 and 62 on both outer surfaces.

  As a modification, the through-hole conductor 323 provided in the intermediate insulating layer 15 can be the same as the interlayer connector 331 or 332. Further, the outer wiring layers 21 and 24 may be obtained by patterning a metal foil after the last lamination step shown in FIG.

  Next, still another embodiment of the present invention will be described with reference to FIG. FIG. 8 is a cross-sectional view schematically showing a configuration of a sensor element module according to still another embodiment. In FIG. 6, the same or equivalent parts as those already described are denoted by the same reference numerals, and the description thereof is omitted.

  In this embodiment, a lens unit 80 is further provided for the sensor element module shown in FIG. By adding the lens unit 80, added value can be increased. Further, it can be supplied to the market as a module assembled so that the lens of the lens unit 80 is disposed at an appropriate position with respect to the light receiving portion 41Aa of the sensor element chip 41A.

  The lens unit 80 includes a lens holding unit and a lens, and the lens holding unit holds the lens so that the position of the lens is a desired distance from the light receiving unit 41Aa of the sensor element chip 41A. The lens is provided so that the optical axis thereof is orthogonal to the surface of the light receiving portion 41Aa of the sensor element chip 41A, and guides light from the side opposite to the side where the sensor element chip 41A is located on the light receiving portion 41Aa. Form an image.

  DESCRIPTION OF SYMBOLS 1,1A ... Laminated material, 2, 2A ... Laminated material, 3 ... Laminated material, 11 ... Insulating layer, 11A ... Prepreg, 11o ... Opening part, 12 ... Insulating layer, 12a ... Reinforcement material, 12A ... Prepreg, 12o ... Embedded Area opening, 13 ... insulating layer, 13a ... reinforcing material, 13A ... prepreg, 14 ... insulating layer, 15 ... insulating layer, 15a ... reinforcing material, 21 ... wiring layer (wiring pattern), 21A ... metal foil (copper foil) , 22... Wiring layer (wiring pattern, conductor pattern), 22A... Metal foil (copper foil), 23... Wiring layer (wiring pattern), 24... Wiring layer (wiring pattern), 25 and 26. Pattern), 25A, 26A ... Metal foil (copper foil), 31, 32, 33 ... Interlayer connector (derived from bumps formed by screen printing of conductive composition), 41, 41A ... Sensor element chip (solid-state imaging device) Chip), DESCRIPTION OF SYMBOLS 1a, 41Aa ... Light-receiving part, 51 ... Projection electrode (gold stud bump), 52 ... Adhesive resin, 52A ... Adhesive resin (before hardening), 61, 62 ... Solder resist, 71 ... Opening for embedding area, 72 ... Through-hole , 80... Lens unit, 321, 322... Interlayer connection body (derived from bumps formed by screen printing of conductive composition) 323.

Claims (9)

A first insulating layer that is an insulating layer having an opening;
A second insulating layer, which is an insulating layer positioned in a stacked manner with respect to the first insulating layer so as to include the opening of the first insulating layer;
A conductor pattern sandwiched between the first insulating layer and the second insulating layer;
The second insulating layer has a functional surface, and the functional surface is covered by the second insulating layer except for the functional surface so as to be seen from the opening of the first insulating layer. A sensor element chip flip-connected on the conductor pattern via a protruding electrode,
An adhesive resin provided between the sensor element chip and the first insulating layer so as to include the protruding electrode therein,
The sensor element module, wherein the second insulating layer is an insulating layer containing a reinforcing material facing a surface opposite to the functional surface of the sensor element chip. It said second insulating layer, as the position in the plan view of level the sensor element chip is located, that contains the second reinforcing member in a region other than the region except for the sensor element chip is embedded region The sensor element module according to claim 1.   The sensor element module according to claim 2, wherein a wiring layer is not provided between the reinforcing material of the second insulating layer and the second reinforcing material. A second conductor pattern provided on a surface of the second insulating layer opposite to the side facing the first insulating layer;
An axis that penetrates the second insulating layer and is sandwiched between the surface of the conductor pattern and the surface of the second conductor pattern, and is made of a conductive composition and coincides with the penetrating direction. The sensor element module according to claim 1, further comprising: an interlayer connection body having a shape that has a diameter that changes in the direction of the axis.   5. The sensor element module according to claim 4, wherein the interlayer connector is thicker on the second conductor pattern side than on the conductor pattern side.   The sensor element module according to claim 2, further comprising a wiring layer provided between the reinforcing material of the second insulating layer and the second reinforcing material.   The sensor element module according to claim 1, wherein the sensor element chip is a solid-state imaging element chip, and a light receiving portion is provided on the functional surface of the sensor element chip.   The sensor element module according to claim 4, further comprising a lens unit including a lens provided to face the light receiving portion of the solid-state imaging element chip.   The sensor element module according to claim 1, wherein the sensor element chip is a piezoelectric conversion element chip or a MEMS chip.

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