JP5767061B2 - Piezoelectric device - Google Patents

Piezoelectric device Download PDF

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JP5767061B2
JP5767061B2 JP2011188447A JP2011188447A JP5767061B2 JP 5767061 B2 JP5767061 B2 JP 5767061B2 JP 2011188447 A JP2011188447 A JP 2011188447A JP 2011188447 A JP2011188447 A JP 2011188447A JP 5767061 B2 JP5767061 B2 JP 5767061B2
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element mounting
metal pattern
piezoelectric device
piezoelectric
convex portion
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JP2013051556A (en
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高弘 新山
高弘 新山
弘伸 新徳
弘伸 新徳
亮磨 笹川
亮磨 笹川
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Kyocera Crystal Device Corp
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Kyocera Crystal Device Corp
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Priority to JP2011188447A priority Critical patent/JP5767061B2/en
Priority to PCT/JP2012/072152 priority patent/WO2013031944A1/en
Priority to US13/697,434 priority patent/US9006958B2/en
Priority to CN201280034749.7A priority patent/CN103650335B/en
Priority to KR1020147001443A priority patent/KR101955955B1/en
Priority to TW101131688A priority patent/TW201320420A/en
Publication of JP2013051556A publication Critical patent/JP2013051556A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Description

本発明は、電子機器等に用いられる圧電装置に関するものである。   The present invention relates to a piezoelectric device used in electronic equipment and the like.

従来より、例えば携帯用の電子機器には、各種圧電装置が用いられている。従来の圧電装置２００は、図５に示されているように、素子搭載部材２１０と、素子搭載部材２１０の第１の凹部Ｋ１に収容された圧電素子２２０と、素子搭載部材２１０の第２の凹部Ｋ２に収容された集積回路素子２３０とを含んでいる。   Conventionally, for example, various piezoelectric devices are used in portable electronic devices. As shown in FIG. 5, the conventional piezoelectric device 200 includes an element mounting member 210, a piezoelectric element 220 accommodated in the first recess K <b> 1 of the element mounting member 210, and a second of the element mounting member 210. And an integrated circuit element 230 accommodated in the recess K2.

素子搭載部材２１０には、図６に示されているように、集積回路素子２３０を搭載するための金属パターン２１８が設けられている。集積回路素子２３０は、半田バンプ２３２によって金属パターン２１８に接合されている。半田バンプ２３２は、加熱工程で溶融された後に、冷却固化される。   As shown in FIG. 6, the element mounting member 210 is provided with a metal pattern 218 for mounting the integrated circuit element 230. The integrated circuit element 230 is bonded to the metal pattern 218 by solder bumps 232. The solder bumps 232 are cooled and solidified after being melted in the heating process.

特開２００９−２６７８６６号公報JP 2009-267866 A

しかしながら、従来の圧電装置２００は、例えば、集積回路素子２３０と金属パターン２１８との接合において半田バンプ２３２の接合後に例えばリフロー等の２５０℃程度の加熱工程を複数回行う場合があり半田バンプ２３２が再溶融することがあった。その結果、再溶融した半田バンプ２３２が金属パターン２１８上に拡がり、集積回路素子２３０と金属パターン２１８との接合に関する信頼性が低下する場合があった。   However, in the conventional piezoelectric device 200, for example, in the joining of the integrated circuit element 230 and the metal pattern 218, after the solder bump 232 is joined, a heating process of about 250 ° C. such as reflow may be performed a plurality of times. There was a case of remelting. As a result, the re-melted solder bump 232 spreads on the metal pattern 218, and the reliability related to the bonding between the integrated circuit element 230 and the metal pattern 218 may be reduced.

本発明は、半田バンプによる集積回路素子と金属パターンとの接合の信頼性に関して向上された圧電装置を提供することを課題とする。   An object of the present invention is to provide a piezoelectric device improved in terms of the reliability of bonding between an integrated circuit element and a metal pattern by solder bumps.

本発明の一つの態様による圧電装置は素子搭載部材と、素子搭載部材に搭載されている圧電素子と、素子搭載部材の表面に形成された金属パターンと、半田バンプによって金属パターンに電気的に接続されている集積回路素子とを含んでいる。金属パターンは、素子搭載領域および引き回し領域を含んでいる。集積回路素子は、金属パターンの素子搭載領域に電気的に接続されている。金属パターンは、素子搭載領域と引き回し領域との間に設けられた凸部を有しており、凸部の少なくとも表面部分が金属酸化物から成る。   A piezoelectric device according to one aspect of the present invention is electrically connected to a metal pattern by an element mounting member, a piezoelectric element mounted on the element mounting member, a metal pattern formed on the surface of the element mounting member, and a solder bump. Integrated circuit elements. The metal pattern includes an element mounting area and a routing area. The integrated circuit element is electrically connected to the element mounting area of the metal pattern. The metal pattern has a convex portion provided between the element mounting region and the routing region, and at least the surface portion of the convex portion is made of a metal oxide.

このように、本発明の一つの態様による圧電装置において、素子搭載部材の表面に形成された金属パターンが素子搭載領域および引き回し領域を含んでいるとともに素子搭載領域と引き回し領域との間に設けられた凸部を有しており、凸部の少なくとも表面部分が金属酸化物から成っている。本発明の一つの態様による圧電装置は、このような構成を含んでいることによって、例えばニッケル（Ｎｉ）などの半田濡れ性の低い金属酸化物から成る少なくとも表面部分を有する凸部において溶融された半田バンプの拡がりが抑えられる。その結果、本発明の一つの態様による圧電装置は、集積回路素子２３０と金属パターン２１８との接合に関する信頼性に関して向上されている。   Thus, in the piezoelectric device according to one aspect of the present invention, the metal pattern formed on the surface of the element mounting member includes the element mounting area and the routing area, and is provided between the element mounting area and the routing area. And at least a surface portion of the convex portion is made of a metal oxide. By including such a configuration, the piezoelectric device according to one aspect of the present invention is melted in the convex portion having at least a surface portion made of a metal oxide having low solder wettability such as nickel (Ni). Expansion of solder bumps can be suppressed. As a result, the piezoelectric device according to one aspect of the present invention is improved in terms of reliability related to the bonding between the integrated circuit element 230 and the metal pattern 218.

本発明の一つの実施形態における圧電装置の一例を示した断面図である。It is sectional drawing which showed an example of the piezoelectric device in one embodiment of this invention. 図１に示された圧電装置の下面図である。FIG. 2 is a bottom view of the piezoelectric device shown in FIG. 1. 図２に示された圧電装置において符号Ｂによって示された部分の拡大図である。FIG. 3 is an enlarged view of a portion indicated by a symbol B in the piezoelectric device shown in FIG. 2. 図３に示された圧電装置の部分拡大図のＹ−Ｙ線縦断面図である。FIG. 4 is a longitudinal sectional view taken along line YY of a partially enlarged view of the piezoelectric device shown in FIG. 従来の圧電装置を示した断面図である。It is sectional drawing which showed the conventional piezoelectric device. 従来の圧電装置の集積回路素子の搭載面側の平面図である。It is a top view by the side of the mounting surface of the integrated circuit element of the conventional piezoelectric device.

以下、本発明の例示的な実施形態について図面を参照して説明する。   Hereinafter, exemplary embodiments of the present invention will be described with reference to the drawings.

図１に示されているように、本発明の一つの実施形態における圧電装置１００は、素子搭載部材１１０と、素子搭載部材１１０に搭載された圧電素子１２０および集積回路素子１３０と、蓋部材１５０とを含んでいる。なお、図１は、図２に示された圧電装置のＡ―Ａにおける縦断面図を示している。   As shown in FIG. 1, the piezoelectric device 100 according to one embodiment of the present invention includes an element mounting member 110, a piezoelectric element 120 and an integrated circuit element 130 mounted on the element mounting member 110, and a lid member 150. Including. FIG. 1 is a longitudinal sectional view taken along line AA of the piezoelectric device shown in FIG.

素子搭載部材１１０は、基板部１１１と、基板部１１１の一方の主面に設けられた第一の枠部１１２と、基板部１１１の他方の主面に設けられた第二の枠部１１３とを含んでいる。素子搭載部材１１０を構成する基板部１１１と、第一の枠部１１２および第二の枠部１１３は、例えば、ガラス−セラミックス、アルミナセラミックス等のセラミック材料からなる。   The element mounting member 110 includes a substrate portion 111, a first frame portion 112 provided on one main surface of the substrate portion 111, and a second frame portion 113 provided on the other main surface of the substrate portion 111. Is included. The substrate part 111, the first frame part 112, and the second frame part 113 constituting the element mounting member 110 are made of a ceramic material such as glass-ceramics or alumina ceramics, for example.

また、基板部１１１は、一方の主面に圧電素子１２０を搭載するための圧電素子搭載用パターン１１４が配置され、他方の主面に集積回路素子１３０を搭載するための金属パターン１１８が配置されている。また、図２に示されているように、基板部１１１の他方の主面の金属パターン１１８は、例えば３行２列に６個配置されている。図１では、金属パターン１１８の１列を横切って切断した断面図を示している。素子搭載部材１１０に配置された金属パターン１１８は、後述する集積回路素子１３０の電極パッド１３４が半田バンプ１３２を介して接合されている。また、基板部１１１の内部には、内層配線（図示せず）が設けられ、圧電素子搭載用パターン１１４と金属パターン１１８とが内層配線（図示せず）を介して電気的に接続されている。   The substrate 111 has a piezoelectric element mounting pattern 114 for mounting the piezoelectric element 120 on one main surface, and a metal pattern 118 for mounting the integrated circuit element 130 on the other main surface. ing. Further, as shown in FIG. 2, six metal patterns 118 on the other main surface of the substrate unit 111 are arranged in, for example, 3 rows and 2 columns. In FIG. 1, a cross-sectional view cut across one row of the metal pattern 118 is shown. In the metal pattern 118 arranged on the element mounting member 110, an electrode pad 134 of an integrated circuit element 130 described later is bonded via a solder bump 132. Further, an inner layer wiring (not shown) is provided inside the substrate unit 111, and the piezoelectric element mounting pattern 114 and the metal pattern 118 are electrically connected via the inner layer wiring (not shown). .

また、素子搭載部材１１０は、基板部１１１および第一の枠部１１２によって囲まれた第一の凹部Ｋ１を有している。第一の凹部Ｋ１には、圧電素子１２０が収容されている。圧電素子１２０が収容されている第一の凹部Ｋ１は、蓋部材１５０によって気密封止されている。   In addition, the element mounting member 110 has a first recess K <b> 1 surrounded by the substrate portion 111 and the first frame portion 112. The piezoelectric element 120 is accommodated in the first recess K1. The first recess K1 in which the piezoelectric element 120 is accommodated is hermetically sealed by the lid member 150.

また、素子搭載部材１１０は、基板部１１１および第二の枠部１１３によって囲まれた第二の凹部Ｋ２を有している。第二の凹部Ｋ２には、集積回路素子１３０が収容されている。第二の枠部１１３の四隅には、複数の外部接続端子１１６が設けられている。複数の外部接続端子１１６は、それぞれＶＣＣ端子、ＶＣＯＮ端子、ＯＵＴ端子、グランド端子として機能する。   The element mounting member 110 has a second recess K2 surrounded by the substrate portion 111 and the second frame portion 113. The integrated circuit element 130 is accommodated in the second recess K2. A plurality of external connection terminals 116 are provided at the four corners of the second frame portion 113. The plurality of external connection terminals 116 function as a VCC terminal, a VCON terminal, an OUT terminal, and a ground terminal, respectively.

圧電素子１２０は、圧電素板の両主面に励振用電極（図示せず）と接続用電極（図示せず）を備える構造となっている。また、圧電素子１２０の接続用電極（図示せず）は、導電性接着剤１２１を介して素子搭載部材１１０に配置された圧電素子搭載用パターン１１４に接続されている。また、圧電素子１２０は、所定の結晶軸でカットした圧電素板に外部からの変動電圧が印加されると、所定の周波数の厚みすべり振動が励振される。圧電素板としては、例えば水晶が用いられる。   The piezoelectric element 120 has a structure including excitation electrodes (not shown) and connection electrodes (not shown) on both main surfaces of the piezoelectric element plate. The connection electrode (not shown) of the piezoelectric element 120 is connected to the piezoelectric element mounting pattern 114 disposed on the element mounting member 110 via the conductive adhesive 121. In addition, when a fluctuation voltage from the outside is applied to the piezoelectric element plate cut along a predetermined crystal axis, the piezoelectric element 120 is excited by thickness shear vibration having a predetermined frequency. For example, quartz is used as the piezoelectric element plate.

集積回路素子１３０は、少なくとも発振回路を備える構成となっている。集積回路素子１３０は、回路が形成された面に電極パッド１３４が形成される。電極パッド１３４は、素子搭載部材１１０に配置された金属パターン１１８に、半田バンプ１３２を介して接合されている。また、集積回路素子１３０の電極パッド１３４と、素子搭載部材１１０に配置された金属パターン１１８との間には、樹脂１４０が充填されている。   The integrated circuit element 130 includes at least an oscillation circuit. In the integrated circuit element 130, an electrode pad 134 is formed on a surface on which a circuit is formed. The electrode pad 134 is bonded to the metal pattern 118 disposed on the element mounting member 110 via the solder bump 132. A resin 140 is filled between the electrode pads 134 of the integrated circuit element 130 and the metal pattern 118 disposed on the element mounting member 110.

半田バンプ１３２は、集積回路素子１３０の回路の形成された面の電極パッド１３４上にスクリーン印刷により形成され、バンプ径が例えば８０〜１００μｍ程度で、高さが例えば６０〜１００μｍ程度の大きさで形成されている。また、本実施形態に用いられる半田バンプ１３２は、例えばＳｎ―Ｃｕ−Ｎｉ系の組成を持つ鉛フリー半田が用いられる。   The solder bump 132 is formed by screen printing on the electrode pad 134 on the surface of the integrated circuit element 130 on which the circuit is formed, and has a bump diameter of about 80 to 100 μm and a height of about 60 to 100 μm, for example. Is formed. The solder bumps 132 used in the present embodiment are, for example, lead-free solder having a Sn—Cu—Ni-based composition.

蓋部材１５０は、基板部１１１と第一の枠部１１２で形成された第一の凹部Ｋ１を気密封止している。蓋部材１５０の材質は、４２アロイまたはコバール、リン青銅等からなる。   The lid member 150 hermetically seals the first concave portion K <b> 1 formed by the substrate portion 111 and the first frame portion 112. The material of the lid member 150 is made of 42 alloy, Kovar, phosphor bronze, or the like.

ここで、本実施形態における圧電装置１００は、図１、図２に示すように、圧電装置１００の素子搭載部材１１０に配置された金属パターン１１８が、素子搭載領域１１８ａおよび引き回し領域１１８ｂを備え、素子搭載領域１１８ａに電気的に接続されている半田バンプ１３２と、半田バンプ１３２に電気的に接続されている集積回路素子１３０を備えている。また、本発明の実施形態における金属パターン１１８は、図３、図４に示すように、素子搭載領域１１８ａと引き回し領域１１８ｂとの間に設けられた凸部１１９を有しており、凸部１１９の少なくとも表面部分が金属酸化物から成っている。これにより、本実施形態における圧電装置１００は、凸部１１９がダムとなる物理的作用と金属酸化物が濡れにくい化学的作用により半田バンプ１３２を形成する半田の拡がりを抑えることができる。   Here, in the piezoelectric device 100 according to the present embodiment, as shown in FIGS. 1 and 2, the metal pattern 118 arranged on the element mounting member 110 of the piezoelectric device 100 includes an element mounting region 118a and a routing region 118b. A solder bump 132 electrically connected to the element mounting region 118 a and an integrated circuit element 130 electrically connected to the solder bump 132 are provided. In addition, as shown in FIGS. 3 and 4, the metal pattern 118 in the embodiment of the present invention has a convex portion 119 provided between the element mounting region 118 a and the routing region 118 b, and the convex portion 119. At least a surface portion of the substrate is made of a metal oxide. Thereby, the piezoelectric device 100 according to the present embodiment can suppress the spread of the solder that forms the solder bumps 132 by the physical action in which the convex portion 119 becomes a dam and the chemical action in which the metal oxide is difficult to wet.

また、図４は、本実施形態における圧電装置１００の金属パターン１１８の断面の拡大図を示す。本実施形態における金属パターン１１８は、素子搭載領域１１８ａと引き回し領域１１８ｂとの間に設けられた凸部１１９を備える構成となっている。金属パターン１１８は、３層構造になっており、例えば下層にモリブデン（Ｍｏ）が形成され、例えば中間層にニッケル（Ｎｉ）が形成され、例えば上層に金（Ａｕ）が形成されている。   FIG. 4 is an enlarged view of a cross section of the metal pattern 118 of the piezoelectric device 100 according to this embodiment. The metal pattern 118 in the present embodiment is configured to include a convex portion 119 provided between the element mounting region 118a and the routing region 118b. The metal pattern 118 has a three-layer structure, for example, molybdenum (Mo) is formed in the lower layer, nickel (Ni) is formed in the intermediate layer, and gold (Au) is formed in the upper layer, for example.

このような本実施形態における圧電装置１００の凸部１１９は、金属パターン１１８にレーザを照射して、金属パターン１１８の中間層の例えばニッケル（Ｎｉ）と上層の例えば金（Ａｕ）をカットして、金属パターン１１８に溝部１１７を設けることで形成される。これにより、凸部１１９は、金属パターン１１８の中間層の例えばニッケル（Ｎｉ）がレーザで削られ、また発熱することにより空気と反応し金属酸化物が生成される。また、本実施形態における凸部１１９は、金属パターン１１８の素子搭載領域１１８ａ側に素子搭載領域側面１１９ａを有し、引き回し領域１１８ｂ側に引き回し領域側面１１９ｂを有する構造になっている。   The convex portion 119 of the piezoelectric device 100 in this embodiment irradiates the metal pattern 118 with a laser to cut, for example, nickel (Ni) as an intermediate layer of the metal pattern 118 and gold (Au) as an upper layer. The metal pattern 118 is formed by providing the groove 117. Thereby, for example, nickel (Ni) in the intermediate layer of the metal pattern 118 is scraped by the laser, and the protrusion 119 reacts with air by generating heat to generate a metal oxide. Further, the convex portion 119 in the present embodiment has a structure having an element mounting area side surface 119a on the element mounting area 118a side of the metal pattern 118 and a routing area side surface 119b on the routing area 118b side.

また、図３は、本実施形態における圧電装置１００の金属パターン１１８の上面の拡大図を示す。本実施形態における金属パターン１１８は、素子搭載領域１１８ａと引き回し領域１１８ｂとの間に設けられた凸部１１９と、凸部１１９よりも引き回し領域１１８ｂ側に形成された溝部１１７を備える構成となっている。ここで、本実施形態における圧電装置１００の凸部１１９は、素子搭載領域１１８ａ側に形成された素子搭載領域側面１１９ａが、複数の凹部１１９ｃを有しており、複数の凹部１１９ｃのそれぞれが平面視において引き回し領域１１８ｂの方向へ向かって狭まるように凹んでいる構造となっている。また、溝部１１７は、複数の微少な凹凸による模様が形成されている。溝部１１７の複数の微小な凹凸は、平面視において、仮に半田が素子搭載領域１１８ａから引き回し領域１１８ｂの方向へ流れ出した場合にその流れが妨げられるような曲線模様を有している。   FIG. 3 is an enlarged view of the upper surface of the metal pattern 118 of the piezoelectric device 100 according to this embodiment. The metal pattern 118 according to the present embodiment includes a convex portion 119 provided between the element mounting region 118a and the routing region 118b, and a groove portion 117 formed on the routing region 118b side of the convex portion 119. Yes. Here, as for the convex part 119 of the piezoelectric device 100 in this embodiment, the element mounting area side surface 119a formed on the element mounting area 118a side has a plurality of recesses 119c, and each of the plurality of recesses 119c is a flat surface. It has a structure that is recessed so as to narrow toward the direction of the lead-out region 118b when viewed. In addition, the groove 117 is formed with a pattern having a plurality of minute irregularities. The plurality of minute irregularities of the groove 117 has a curved pattern that prevents the flow of solder when the solder flows out from the element mounting region 118a toward the region 118b in plan view.

本実施形態における圧電装置１００の凸部１１９は、高さが例えば１〜２μｍ程度であり、溝部１１７の深さが例えば０．５〜１μｍ程度であり、溝部１１７の幅が例えば３０〜５０μｍ程度である。また、本実施形態における圧電装置１００の凸部１１９は、例えばレーザー照射によって形成される場合には、レーザのスポット径または出力強度などを変えることで高さまたは傾きについて調整される。同様に、複数の凹部１１９ｃの形状、溝部１１７の幅または深さについても、レーザのスポット径または出力強度などを変えることで調整することができる。ここで、レーザとしては、例えば、炭酸ガスレーザ、ＹＡＧレーザ、ＹＶＯ４レーザ、半導体レーザ、またはエキシマレーザ等が用いられる。   The convex portion 119 of the piezoelectric device 100 according to this embodiment has a height of, for example, about 1 to 2 μm, a depth of the groove portion 117 of, for example, about 0.5 to 1 μm, and a width of the groove portion 117 of, for example, about 30 to 50 μm. It is. In addition, when the convex portion 119 of the piezoelectric device 100 in the present embodiment is formed by, for example, laser irradiation, the height or inclination is adjusted by changing the spot diameter or output intensity of the laser. Similarly, the shape of the plurality of recesses 119c and the width or depth of the groove 117 can be adjusted by changing the laser spot diameter or output intensity. Here, as the laser, for example, a carbon dioxide laser, a YAG laser, a YVO4 laser, a semiconductor laser, an excimer laser, or the like is used.

このように、本実施形態における圧電装置１００の素子搭載部材１１０に配置された金属パターン１１８は、素子搭載領域１１８ａと引き回し領域１１８ｂとの間に設けられた凸部１１９を有しており、凸部１１９の少なくとも表面部分が金属酸化物から成っている。これにより、本発明の実施形態における圧電装置１００は、凸部１１９の金属酸化物が例えばニッケル（Ｎｉ）などの半田濡れ性の低い酸化された金属からなることから、溶融した半田バンプ１３２の拡がりが凸部１１９において抑えることができる。その結果、本実施形態における圧電装置１００は、集積回路素子１３０の電極パッド１３４と半田バンプ１３２との接合部分の面積を確保でき、半田バンプ１３２の接合強度の低下を抑えることができる。   As described above, the metal pattern 118 disposed on the element mounting member 110 of the piezoelectric device 100 according to the present embodiment has the convex portion 119 provided between the element mounting area 118a and the routing area 118b. At least a surface portion of the portion 119 is made of a metal oxide. As a result, in the piezoelectric device 100 according to the embodiment of the present invention, the metal oxide of the convex portion 119 is made of an oxidized metal having low solder wettability such as nickel (Ni). Can be suppressed at the convex portion 119. As a result, the piezoelectric device 100 according to the present embodiment can secure the area of the joint portion between the electrode pad 134 of the integrated circuit element 130 and the solder bump 132, and can suppress a decrease in the joint strength of the solder bump 132.

また、本実施形態における圧電装置１００の凸部１１９は、素子搭載領域側面１１９ａを有し、素子搭載領域側面１１９ａに複数の凹部１１９ｃを有しており、複数の凹部１１９ｃのそれぞれが平面視において引き回し領域１１８ｂの方向へ向かって狭まるように凹んでいる。これにより、素子搭載領域１１８ａから加熱工程で溶融して拡がった半田バンプ１３２を半田の表面張力により拡がりを抑えることができる。   Further, the convex portion 119 of the piezoelectric device 100 in the present embodiment has an element mounting region side surface 119a, and the element mounting region side surface 119a has a plurality of concave portions 119c, and each of the plurality of concave portions 119c is in plan view. It is recessed so as to narrow in the direction of the routing region 118b. As a result, it is possible to prevent the solder bump 132 that has been melted and expanded from the element mounting region 118a in the heating process from being spread by the surface tension of the solder.

更に、本実施形態における圧電装置１００の凸部１１９は、素子搭載領域側面１１９ａと引き回し領域側面１１９ｂとを有しており、素子搭載領域側面１１９ａが引き回し側面１１９ｂよりも急傾斜となっている。これにより、本施形態における圧電装置１００の凸部１１９は、半田バンプ１３２の拡がりを抑えることができる。   Furthermore, the convex portion 119 of the piezoelectric device 100 according to the present embodiment has an element mounting region side surface 119a and a routing region side surface 119b, and the element mounting region side surface 119a is routed more steeply than the side surface 119b. Thereby, the convex part 119 of the piezoelectric device 100 in this embodiment can suppress the expansion of the solder bump 132.

また、本実施形態における圧電装置１００の金属パターン１１８は、引き回し領域１１８ｂに設けられた溝部１１７を有している。これにより、本発明の実施形態における圧電装置１００の金属パターン１１８は、凸部１１９の素子搭載領域側面１１９ａで半田バンプ１３２を形成する半田が止まらなかったとしても、引き回し領域１１８ｂに設けられた溝部１１７で半田バンプ１３２を形成する半田の拡がりを止め、溝部１１７以降の引き回し領域１１８ｂへの半田の拡がりを抑えることができる。   In addition, the metal pattern 118 of the piezoelectric device 100 in the present embodiment has a groove 117 provided in the routing region 118b. Accordingly, the metal pattern 118 of the piezoelectric device 100 according to the embodiment of the present invention has a groove provided in the routing region 118b even if the solder forming the solder bump 132 does not stop on the element mounting region side surface 119a of the convex portion 119. At 117, the spread of the solder that forms the solder bump 132 can be stopped, and the spread of the solder to the routing region 118b after the groove 117 can be suppressed.

更に、本実施形態における圧電装置１００の溝部１１７は、図３に示すように、複数の微少な凹凸が形成されていることで、素子搭載領域側面１１９ａを超えて半田バンプ１３２が拡がったとしても、溝部１１７の複数の微少な凹凸で半田バンプ１３２の拡がりを抑えることができる。また、本実施形態における溝部１１７は、複数の微少な凹凸が半田の流れを抑える方向に形成されており、半田の流れが複数の微少な凹凸で止まるように形成されている。   Further, as shown in FIG. 3, the groove 117 of the piezoelectric device 100 according to the present embodiment has a plurality of minute irregularities, so that even if the solder bump 132 extends beyond the element mounting region side surface 119a. The spread of the solder bumps 132 can be suppressed by a plurality of minute irregularities in the groove 117. Further, the groove 117 in the present embodiment is formed such that a plurality of minute irregularities are formed in a direction to suppress the flow of solder, and the solder flow is stopped by the plurality of minute irregularities.

また、前記した実施形態以外にも、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。例えば、金属パターン１１８は、３層構造を示したが例えば４層構造の多層構造でも構わない。また、金属パターン１１８の３層構造の組成も、例えば、下層にモリブデン（Ｍｏ）、中間層にニッケル（Ｎｉ）、上層に金（Ａｕ）が形成された構造を示したがこれに限定されず、他の金属の組み合わせでも構わない。例えば、金属パターン１１８は、下層にタングステン（Ｗ）、中間層に銅（Ｃｕ）、上層に銀（Ａｇ）などの組み合わせでも構わない。また、前記実施形態に示した圧電装置１００の第一の凹部Ｋ１に搭載される圧電素子１２０は、平面視矩形状の圧電素板の両主面に励振用電極と接続用電極を備える構造を示したが、これに限定することなく、例えば、平面視形状が円形や、音叉形の圧電素板に各種電極を設けた形態の圧電素子でもよく、又圧電素子に変えて弾性表面波素子を用いても構わない。   In addition to the above-described embodiments, various changes and improvements can be made without departing from the scope of the present invention. For example, the metal pattern 118 has a three-layer structure, but may have a multilayer structure having a four-layer structure, for example. In addition, the composition of the three-layer structure of the metal pattern 118 is, for example, a structure in which molybdenum (Mo) is formed in the lower layer, nickel (Ni) is formed in the intermediate layer, and gold (Au) is formed in the upper layer, but is not limited thereto. Other metal combinations may be used. For example, the metal pattern 118 may be a combination of tungsten (W) as a lower layer, copper (Cu) as an intermediate layer, and silver (Ag) as an upper layer. Further, the piezoelectric element 120 mounted in the first recess K1 of the piezoelectric device 100 shown in the above embodiment has a structure including excitation electrodes and connection electrodes on both main surfaces of a rectangular piezoelectric element plate in plan view. However, the present invention is not limited to this, and for example, a piezoelectric element having a circular shape in plan view, or a piezoelectric element in which various electrodes are provided on a tuning fork-shaped piezoelectric element plate, or a surface acoustic wave element instead of a piezoelectric element may be used. You may use.

１００・・・圧電装置
１１０・・・素子搭載部材
１１１・・・基板部
１１２・・・第一の枠部
１１３・・・第二の枠部
１１４・・・圧電素子搭載用パターン
１１６・・・外部接続端子
１１７・・・溝部
１１８・・・金属パターン
１１８ａ・・・素子搭載領域
１１８ｂ・・・引き回し領域
１１９・・・凸部
１１９ａ・・・素子搭載領域側面
１１９ｂ・・・引き回し領域側面
１１９ｃ・・・凹部
１２０・・・圧電素子
１２１・・・導電性接着剤
１３０・・・集積回路素子
１３２・・・半田バンプ
１３４・・・電極パッド
１４０・・・樹脂
１５０・・・蓋部材
Ｋ１・・・第一の凹部
Ｋ２・・・第二の凹部 DESCRIPTION OF SYMBOLS 100 ... Piezoelectric device 110 ... Element mounting member 111 ... Substrate part 112 ... First frame part 113 ... Second frame part 114 ... Piezoelectric element mounting pattern 116 ... External connection terminal 117 ... groove 118 ... metal pattern 118a ... element mounting region 118b ... leading region 119 ... convex portion 119a ... element mounting region side surface 119b ... leading region side surface 119c ··· Recessed portion 120 ··· Piezoelectric element 121 ··· Conductive adhesive 130 ··· Integrated circuit element 132 · · · Solder bump 134 · · · Electrode pad 140 · · · Resin 150 · · · Lid member K1 ··· -1st recessed part K2 ... 2nd recessed part

Claims (3)

素子搭載部材と、
前記素子搭載部材に搭載されている圧電素子と、
前記素子搭載部材の表面に形成されており、素子搭載領域および引き回し領域を含んでいる金属パターンと、
半田バンプによって前記金属パターンの前記素子搭載領域に電気的に接続されている集積回路素子とを備え、
前記金属パターンが前記素子搭載領域と前記引き回し領域との間に設けられた凸部を有しており、前記凸部の少なくとも表面部分が金属酸化物から成り、
前記凸部が素子搭載領域側面を有しており、前記素子搭載領域側面が平面視において複数 の凹部を有しており、複数の凹部のそれぞれが平面視において前記引き回し領域の方向へ 向かって狭まるように凹んでいることを特徴とする圧電装置。An element mounting member;
A piezoelectric element mounted on the element mounting member;
A metal pattern formed on the surface of the element mounting member and including an element mounting area and a routing area;
An integrated circuit element electrically connected to the element mounting region of the metal pattern by solder bumps,
Has a protrusion provided between the metal pattern the element mounting area and the lead-out area, at least the surface portion of the convex portion is Ri formed of a metal oxide,
The convex portion has an element mounting region side surface, the element mounting region side surface has a plurality of recesses in a plan view, and each of the plurality of recesses narrows in the direction of the routing region in a plan view. A piezoelectric device characterized by being recessed . 素子搭載部材と、
前記素子搭載部材に搭載されている圧電素子と、
前記素子搭載部材の表面に形成されており、素子搭載領域および引き回し領域を含んでいる金属パターンと、
半田バンプによって前記金属パターンの前記素子搭載領域に電気的に接続されている集積回路素子とを備え、
前記金属パターンが前記素子搭載領域と前記引き回し領域との間に設けられた凸部を有しており、前記凸部の少なくとも表面部分が金属酸化物から成り、
前記凸部が素子搭載領域側面と引き回し領域側面とを有しており、前記素子搭載領域側面 が前記引き回し側面よりも急傾斜であることを特徴とする圧電装置。An element mounting member;
A piezoelectric element mounted on the element mounting member;
A metal pattern formed on the surface of the element mounting member and including an element mounting area and a routing area;
An integrated circuit element electrically connected to the element mounting region of the metal pattern by solder bumps,
Has a protrusion provided between the metal pattern the element mounting area and the lead-out area, at least the surface portion of the convex portion is Ri formed of a metal oxide,
The piezoelectric device characterized in that the convex portion has an element mounting region side surface and a routing region side surface, and the element mounting region side surface is steeper than the routing side surface. 前記金属パターンは、前記引き回し領域に設けられた溝部を有していることを特徴とする請求項１又は請求項２記載の圧電装置。The metal pattern, the piezoelectric device according to claim 1 or claim 2, wherein the having a groove provided in the lead-out area.
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