JP5753080B2 - 電子検出システム及び方法 - Google Patents

電子検出システム及び方法 Download PDF

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Publication number
JP5753080B2
JP5753080B2 JP2011512528A JP2011512528A JP5753080B2 JP 5753080 B2 JP5753080 B2 JP 5753080B2 JP 2011512528 A JP2011512528 A JP 2011512528A JP 2011512528 A JP2011512528 A JP 2011512528A JP 5753080 B2 JP5753080 B2 JP 5753080B2
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Japan
Prior art keywords
particles
sample
magnetic field
distance
emitted
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JP2011512528A
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English (en)
Japanese (ja)
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JP2011525237A (ja
JP2011525237A5 (enExample
Inventor
ヒル レイモンド
ヒル レイモンド
エイ ノッテ フォース ジョン
エイ ノッテ フォース ジョン
Original Assignee
カール ツァイス マイクロスコーピー エルエルシー
カール ツァイス マイクロスコーピー エルエルシー
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Priority claimed from PCT/US2008/065470 external-priority patent/WO2009014811A2/en
Application filed by カール ツァイス マイクロスコーピー エルエルシー, カール ツァイス マイクロスコーピー エルエルシー filed Critical カール ツァイス マイクロスコーピー エルエルシー
Publication of JP2011525237A publication Critical patent/JP2011525237A/ja
Publication of JP2011525237A5 publication Critical patent/JP2011525237A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2449—Detector devices with moving charges in electric or magnetic fields

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
JP2011512528A 2008-06-02 2009-05-26 電子検出システム及び方法 Expired - Fee Related JP5753080B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
USPCT/US2008/065470 2008-06-02
PCT/US2008/065470 WO2009014811A2 (en) 2007-06-08 2008-06-02 Ice layers in charged particle systems and methods
US7425608P 2008-06-20 2008-06-20
US61/074,256 2008-06-20
PCT/US2009/045145 WO2009148881A2 (en) 2008-06-02 2009-05-26 Electron detection systems and methods

Publications (3)

Publication Number Publication Date
JP2011525237A JP2011525237A (ja) 2011-09-15
JP2011525237A5 JP2011525237A5 (enExample) 2012-07-12
JP5753080B2 true JP5753080B2 (ja) 2015-07-22

Family

ID=40852005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011512528A Expired - Fee Related JP5753080B2 (ja) 2008-06-02 2009-05-26 電子検出システム及び方法

Country Status (4)

Country Link
US (1) US20110127428A1 (enExample)
EP (1) EP2288905A2 (enExample)
JP (1) JP5753080B2 (enExample)
WO (1) WO2009148881A2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9767986B2 (en) * 2014-08-29 2017-09-19 Kla-Tencor Corporation Scanning electron microscope and methods of inspecting and reviewing samples
TWI573077B (zh) * 2015-03-27 2017-03-01 凌通科技股份有限公司 電子印刷品的自動頁面檢測方法以及使用其之電子印刷品

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58110956U (ja) * 1982-01-22 1983-07-28 株式会社日立製作所 荷電粒子照射装置
FR2584234B1 (fr) * 1985-06-28 1988-12-09 Cameca Testeur de circuit integre a faisceau d'electrons
JPH0616400B2 (ja) * 1986-11-28 1994-03-02 日本電信電話株式会社 荷電ビ−ム観察装置
JP3148353B2 (ja) * 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
JPH0696712A (ja) * 1992-09-14 1994-04-08 Hitachi Ltd 集束イオンビーム装置
DE69638126D1 (de) * 1995-10-19 2010-04-01 Hitachi Ltd Rasterelektronenmikroskop
JP3749107B2 (ja) * 1999-11-05 2006-02-22 ファブソリューション株式会社 半導体デバイス検査装置
US20010032938A1 (en) * 2000-02-09 2001-10-25 Gerlach Robert L. Through-the-lens-collection of secondary particles for a focused ion beam system
US6683320B2 (en) * 2000-05-18 2004-01-27 Fei Company Through-the-lens neutralization for charged particle beam system
EP1388883B1 (en) * 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
EP1463087B1 (en) * 2003-03-24 2010-06-02 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh Charged particle beam device
US7557359B2 (en) * 2003-10-16 2009-07-07 Alis Corporation Ion sources, systems and methods
ATE537550T1 (de) * 2005-07-08 2011-12-15 Nexgen Semi Holding Inc Vorrichtung und verfahren zur kontrollierten fertigung von halbleitern mittels teilchenstrahlen
TW200737267A (en) * 2006-03-20 2007-10-01 Alis Corp Systems and methods for a helium ion pump
WO2007117397A2 (en) * 2006-03-31 2007-10-18 Fei Company Improved detector for charged particle beam instrument
US7804068B2 (en) * 2006-11-15 2010-09-28 Alis Corporation Determining dopant information

Also Published As

Publication number Publication date
JP2011525237A (ja) 2011-09-15
WO2009148881A3 (en) 2010-03-25
US20110127428A1 (en) 2011-06-02
WO2009148881A2 (en) 2009-12-10
EP2288905A2 (en) 2011-03-02

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