JP5749477B2 - Heat dissipation board and electronic components - Google Patents
Heat dissipation board and electronic components Download PDFInfo
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- JP5749477B2 JP5749477B2 JP2010263214A JP2010263214A JP5749477B2 JP 5749477 B2 JP5749477 B2 JP 5749477B2 JP 2010263214 A JP2010263214 A JP 2010263214A JP 2010263214 A JP2010263214 A JP 2010263214A JP 5749477 B2 JP5749477 B2 JP 5749477B2
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- 230000017525 heat dissipation Effects 0.000 title claims description 34
- 239000010410 layer Substances 0.000 claims description 59
- 239000012790 adhesive layer Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 18
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- 239000011347 resin Substances 0.000 claims description 15
- 239000011256 inorganic filler Substances 0.000 claims description 12
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 12
- 239000003822 epoxy resin Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000001723 curing Methods 0.000 description 17
- 238000009413 insulation Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- -1 polyethylene terephthalate Polymers 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 229910001339 C alloy Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910001095 light aluminium alloy Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本発明は、電子部品と半導体素子の外周を封止した熱硬化性樹脂を有する放熱基板及び電子部品に関する。 The present invention relates to a heat dissipation board and an electronic component having a thermosetting resin that seals the outer periphery of the electronic component and the semiconductor element.
モールド樹脂で成形された電子部品としては、特許文献1や特許文献2がある。これら電子部品は、近年の電子部品のハイパワー化に対応するための絶縁性の向上、放熱性の向上が図られている。 As electronic parts molded with mold resin, there are Patent Document 1 and Patent Document 2. These electronic components have been improved in insulation and heat dissipation to cope with the recent increase in power of electronic components.
本発明は、接着層と硬化層の界面の破壊を低減させしたことにより接着層と硬化層の絶縁性を高めることができた放熱基板及び電子部品である。 The present invention provides a heat dissipation board and an electronic component that can improve the insulation between the adhesive layer and the hardened layer by reducing the breakage of the interface between the adhesive layer and the hardened layer.
本発明は、金属板と、硬化層と、接着層との順で積層され、硬化層がCステージ状で放熱性を有し、硬化層の接着層側の表面が表面粗さ0.1μm以上20μm以下であり、接着層がBステージ状である放熱基板である。 In the present invention, a metal plate, a hardened layer, and an adhesive layer are laminated in this order, the hardened layer has a C-stage shape and has heat dissipation, and the surface of the hardened layer on the adhesive layer side has a surface roughness of 0.1 μm or more. The heat dissipation substrate is 20 μm or less, and the adhesive layer has a B-stage shape.
放熱基板の硬化層及び接着層は、エポキシ樹脂、硬化剤及び無機フィラーからなり、硬化層の示差走査型熱量計から計算した硬化率が90%以上であり、接着層の硬化率が10%以上75%以下であるのが好ましい。 The cured layer and adhesive layer of the heat dissipation substrate are made of an epoxy resin, a curing agent, and an inorganic filler, the curing rate calculated from the differential scanning calorimeter of the cured layer is 90% or more, and the curing rate of the adhesive layer is 10% or more. It is preferably 75% or less.
放熱基板の硬化層が同一の素材で多層化されたものであるのが好ましい。 It is preferable that the hardened layer of the heat dissipation substrate is made of multiple layers of the same material.
硬化層及び接着層が熱硬化型であるのが好ましい。 It is preferable that the cured layer and the adhesive layer are thermosetting.
無機フィラーが、酸化ケイ素、酸化アルミニウム、窒化アルミニウム、窒化硼素、窒化珪素の1種以上からなり、無機フィラーの充填率が45体積%以上85体積%以下であることが好ましい。 The inorganic filler is preferably composed of one or more of silicon oxide, aluminum oxide, aluminum nitride, boron nitride, and silicon nitride, and the filling rate of the inorganic filler is preferably 45% by volume or more and 85% by volume or less.
他の観点からの発明は、上述の放熱基板と、放熱基板の絶縁層上に搭載されたリードフレームを有する電子部品である。 Another aspect of the invention is an electronic component having the above-described heat dissipation substrate and a lead frame mounted on an insulating layer of the heat dissipation substrate.
他の観点からの発明は、前記電子部品と、リードフレームに電気的に接続された半導体素子と、電子部品と半導体素子の外周を封止した熱硬化性樹脂を有する電子部品である。 Another aspect of the invention is an electronic component including the electronic component, a semiconductor element electrically connected to a lead frame, and a thermosetting resin that seals the outer periphery of the electronic component and the semiconductor element.
本発明に係る放熱基板及び電子部品は、高熱伝導性及び高熱放射性を有し、これにより熱に起因する部品の誤作動、性能の低下や劣化、さらには信頼性低下が生じ難くなった。 The heat dissipation board and the electronic component according to the present invention have high thermal conductivity and high thermal radiation, which makes it difficult for the component to malfunction, deteriorate or deteriorate performance, and further reduce reliability due to heat.
1 接着層
2 硬化層
3 金属シート
1 Adhesive layer 2 Hardened
以下、本発明を実施するための形態について詳細に説明する。 Hereinafter, embodiments for carrying out the present invention will be described in detail.
本発明は、金属板と、硬化層と、接着層との順で積層され、硬化層がCステージ状で放熱性を有し、硬化層の接着層側の表面が表面粗さ0.1μm以上20μm以下であり、接着層がBステージ状である放熱基板である。 In the present invention, a metal plate, a hardened layer, and an adhesive layer are laminated in this order, the hardened layer has a C-stage shape and has heat dissipation, and the surface of the hardened layer on the adhesive layer side has a surface roughness of 0.1 μm or more. The heat dissipation substrate is 20 μm or less, and the adhesive layer has a B-stage shape.
電子部品に用いる放熱基板とモールド樹脂は、双方を固着させる際、高温・高圧の環境下に置かれる。その際、モールド樹脂の硬化収縮や放熱基板の金属板、リードフレーム及びモールド樹脂の線膨張係数が異なることにより、接着層と硬化層の界面で剥離が発生し、放熱基板の絶縁性低下すなわち電子部品の絶縁性を低下させる課題があった。 The heat dissipation substrate and the mold resin used for the electronic component are placed in a high temperature and high pressure environment when both are fixed. At that time, due to the curing shrinkage of the mold resin and the linear expansion coefficients of the metal plate, lead frame, and mold resin of the heat dissipation board, peeling occurs at the interface between the adhesive layer and the hardened layer, resulting in a decrease in insulation of the heat dissipation board, ie, electrons. There was a problem of lowering the insulation of parts.
本発明は、放熱基板の硬化層表面を粗面にして、接着層と硬化層間の接着性を向上させ、の接着層側の表面が表面粗さ0.1μm以上20μm以下であり、接着層がBステージ状である放熱基板であるため、界面の破壊を無くしたことにより接着層と硬化層の絶縁性を高めることができた。 In the present invention, the cured layer surface of the heat dissipation substrate is roughened to improve the adhesion between the adhesive layer and the cured layer, the surface on the adhesive layer side has a surface roughness of 0.1 μm to 20 μm, and the adhesive layer is Since it is a B-stage heat dissipation substrate, the insulation between the adhesive layer and the hardened layer can be improved by eliminating the destruction of the interface.
放熱基板の用いる金属板としては、金属又はその合金が良く、熱伝導性の良好な銅や銅合金、軽量なアルミニウムやアルミニウム合金、線膨張係数が少ない鉄及び鉄合金、アルミ・珪素・炭素合金、アルミ・炭素合金、銅・炭素合金があり、表面上にアルマイト処理、粗化処理、カップリング剤、めっき処理等の各種表面処理を施すことが好ましい。 The metal plate used for the heat dissipation substrate is preferably a metal or an alloy thereof, copper or copper alloy having good thermal conductivity, light aluminum or aluminum alloy, iron or iron alloy having a low linear expansion coefficient, aluminum / silicon / carbon alloy. There are aluminum / carbon alloys and copper / carbon alloys, and it is preferable to subject the surface to various surface treatments such as alumite treatment, roughening treatment, coupling agent, and plating treatment.
硬化層の接着層側の表面が表面粗さは、あまりにその値が小さいと電子部品を作製した際に硬化層と接着層間で剥離が発生する可能性があり、あまりにその値が大きいと粗面にするのに必要以上の時間がかかるので0.1μm以上20μm以下であり、好ましくは0.5μm以上10μm以下である。 If the surface roughness of the surface of the adhesive layer on the hardened layer is too small, peeling may occur between the hardened layer and the adhesive layer when an electronic component is produced. It takes more time than necessary to adjust the thickness to 0.1 μm or more and 20 μm or less, and preferably 0.5 μm or more and 10 μm or less.
硬化層の接着層側の表面を粗面にする方法としては、電解銅箔粗化処理面の凹凸や凹凸のあるポリエチレンテレフタレート製のフィルムを転写させる方法、サンドブラスト法、アルカリ過マンガン酸塩を用いたデスミア処理、プラズマやコロナ放電といった電気的表面処理及びウオータージェットなどによる切削処理、無機フィラーを高充填させて表面に露出させる方法がある。 As a method of roughening the surface of the adhesive layer side of the hardened layer, a method of transferring a film made of polyethylene terephthalate with unevenness or unevenness of the electrolytic copper foil roughening treatment surface, a sandblasting method, or an alkali permanganate is used. There are a desmear treatment, an electrical surface treatment such as plasma and corona discharge, a cutting treatment with a water jet, and a method of exposing the surface by high filling with an inorganic filler.
硬化層及び接着層に用いるエポキシ樹脂としては、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂があり、具体的には、ナフタレン型、フェニルメタン型、テトラキスフェノールメタン型、ビフェニル型、ビスフェノールAアルキレンオキサイド付加物型のエポキシ樹脂、ビスフェノールA型の水素添加エポキシ樹脂、ポリプロピレングリコール型エポキシ樹脂、ポリテトラメチレングリコール型エポキシ樹脂、ポリサルファイド変性エポキシ樹脂があり、これらを複数組み合わせて用いることもできる。 Epoxy resins used for the hardened layer and the adhesive layer include bisphenol A type epoxy resin and bisphenol F type epoxy resin. Specifically, naphthalene type, phenylmethane type, tetrakisphenolmethane type, biphenyl type, bisphenol A alkylene oxide. There are adduct-type epoxy resins, bisphenol A-type hydrogenated epoxy resins, polypropylene glycol-type epoxy resins, polytetramethylene glycol-type epoxy resins, and polysulfide-modified epoxy resins, and these can be used in combination.
硬化剤としては、芳香族アミン系樹脂、酸無水物系樹脂、フェノール系樹脂及びジシアンアミドからなる群から選ばれる硬化剤の単体又は混合体がある。硬化反応を制御するために、硬化剤や触媒を添加するのが好ましい。 Examples of the curing agent include a simple substance or a mixture of curing agents selected from the group consisting of aromatic amine resins, acid anhydride resins, phenol resins, and dicyanamide. In order to control the curing reaction, it is preferable to add a curing agent or a catalyst.
触媒としては、イミダゾール化合物、有機リン酸化合物、第三級アミン、第四級アンモニウムの単体又は混合体がある。配合する際の配合比は、エポキシ樹脂100質量部に対して0.01質量部以上5質量部以下が好ましい。 Examples of the catalyst include an imidazole compound, an organic phosphate compound, a tertiary amine, and a quaternary ammonium simple substance or mixture. The blending ratio when blending is preferably 0.01 parts by mass or more and 5 parts by mass or less with respect to 100 parts by mass of the epoxy resin.
無機フィラーとしては、電気絶縁性と熱伝導性に優れたものが好ましく、具体的には、酸化ケイ素、酸化アルミニウム、窒化アルミニウム、窒化硼素、窒化珪素の単体又は混合体がある。 As the inorganic filler, those excellent in electrical insulation and thermal conductivity are preferable. Specifically, there are silicon oxide, aluminum oxide, aluminum nitride, boron nitride, and silicon nitride alone or in a mixture.
無機フィラーの配合比は、硬化層及び接着層を構成する組成物の合計量に対して45体積%以上85体積%以下が好ましい。無機フィラーの配合比があまりに少ないと放熱性が不十分になり、あまりに多いと硬化層及び接着層の成形が難しくなる傾向にある。 As for the compounding ratio of an inorganic filler, 45 volume% or more and 85 volume% or less are preferable with respect to the total amount of the composition which comprises a hardening layer and an adhesion layer. If the blending ratio of the inorganic filler is too small, the heat dissipation becomes insufficient, and if it is too large, it tends to be difficult to mold the cured layer and the adhesive layer.
これらフィラーには、カップリング剤、分散剤等の添加剤、溶剤等の粘度調整助剤、酸化チタン、酸化マグネシウム、酸化チタンなどの各種助剤を添加することが好ましい。 It is preferable to add additives such as coupling agents and dispersants, viscosity adjusting aids such as solvents, and various aids such as titanium oxide, magnesium oxide, and titanium oxide to these fillers.
エポキシ樹脂、硬化材、無機フィラーには不純物が少ないことが好ましい。特に塩素イオン、ナトリウムイオン、硫酸イオンは、高温高湿下で電気を印加した際にイオンマイグレーションを起こすため、不純物の少ない材料を選択することが好ましい。 It is preferable that the epoxy resin, the curing material, and the inorganic filler have few impurities. In particular, chlorine ions, sodium ions, and sulfate ions cause ion migration when electricity is applied at high temperature and high humidity. Therefore, it is preferable to select a material with few impurities.
硬化層の示差走査型熱量計から計算した硬化率が90%以上であり、接着層の硬化率が10%以上75%以下であることが好ましい。 The curing rate calculated from the differential scanning calorimeter of the cured layer is preferably 90% or more, and the curing rate of the adhesive layer is preferably 10% or more and 75% or less.
硬化層は、同一素材で、単層又は複数層で形成され、複数層で形成するのが好ましい。複数層にするのが好ましい理由は、仮に一層にボイド等の形成時の不具合があったても他の硬化層によって絶縁信頼性向上させることができるためである。 The hardened layer is made of the same material and is formed of a single layer or a plurality of layers, and is preferably formed of a plurality of layers. The reason why it is preferable to use a plurality of layers is that, even if there is a problem in forming a void or the like in one layer, the insulation reliability can be improved by another cured layer.
硬化層及び接着層にあっては、光硬化型では樹脂モールドしてしまうと光を受けられないため、熱硬化型が好ましい。 In the cured layer and the adhesive layer, the photo-curing type is preferably a thermo-curing type because it cannot receive light if it is resin-molded.
モールド樹脂の素材は、電子部品の安定化のために絶縁シートと熱収縮率の近いものか同一のものが好ましい。モールド樹脂には、無機フィラーを充填したもの、フィラー材料の熱伝導化した放熱性を向上させたモールド樹脂を用いることが好ましい。 The material of the mold resin is preferably a material having a thermal contraction rate close to or the same as that of the insulating sheet in order to stabilize the electronic component. As the mold resin, it is preferable to use a mold resin filled with an inorganic filler or a mold resin with improved heat dissipation of the filler material.
本発明では、硬化層を粗化することによって、樹脂モールド後も剥離が発生せず、絶縁性の良好な電子部品を得ることができた。 In the present invention, by roughening the hardened layer, peeling did not occur even after resin molding, and an electronic component with good insulation could be obtained.
本発明に係る実施例を、比較例と対比して、詳細に説明する。 Examples according to the present invention will be described in detail in comparison with comparative examples.
本発明の実施例1に係る放熱基板は、金属板としての金属シート3、硬化層2と、接着層1の順で積層され、硬化層2がCステージ状で放熱性を有し、硬化層2の接着層側の表面が表面粗さ1.0μmとし、接着層1がBステージ状である放熱基板である。
The heat dissipation substrate according to Example 1 of the present invention is laminated in the order of a
<放熱基板の製造方法>
硬化層2は、ビスフェノールA型エポキシ樹脂(三井化学社製JER−828)対し、硬化剤としてフェノールノボラック(明和化成社製H−8)を加え、微粒子の酸化アルミニウム(住友化学社製AA05)と粗粒子の酸化アルミニウム(昭和電工社製AS50)を合わせて絶縁層中45体積%(球状粗粒子と球状微粒子は質量比が8:2)となるように配合した液を、厚さ0.5mmのタフピッチ銅上に、絶縁層の厚みが100μmに塗布した。そして、130℃で加熱硬化し、硬化率を90%にして硬化層2を作製した。
このとき、硬化率測定は、示差走査型熱量計を用い、発熱ピークから硬化率を計算した。
<Method for manufacturing heat dissipation substrate>
The hardened layer 2 is a bisphenol A type epoxy resin (JER-828 made by Mitsui Chemicals), phenol novolak (H-8 made by Meiwa Kasei Co., Ltd.) is added as a hardener, and fine particle aluminum oxide (AA05 made by Sumitomo Chemical) Coarse aluminum oxide (AS50 manufactured by Showa Denko Co., Ltd.) was combined to make a liquid that was 45% by volume in the insulating layer (spherical coarse particles and spherical fine particles had a mass ratio of 8: 2). On the tough pitch copper, the thickness of the insulating layer was applied to 100 μm. And it hardened at 130 degreeC, the hardened | cured layer 2 was produced for 90% of cure rate.
At this time, the curing rate was measured by using a differential scanning calorimeter and calculating the curing rate from the exothermic peak.
前記硬化層2に、アルカリ過マンガン酸塩水溶液をスプレーし、硬化層2の表面粗さを1.0μmに調整した。 The hardened layer 2 was sprayed with an alkaline permanganate aqueous solution to adjust the surface roughness of the hardened layer 2 to 1.0 μm.
前記硬化層2と同様に配合した液を、厚み100μmで塗布し、110℃で加熱硬化し、硬化率を65%に調整し、接着層3を得た。このときの硬化層2の硬化率は100%であった。
A liquid blended in the same manner as in the cured layer 2 was applied at a thickness of 100 μm, heated and cured at 110 ° C., the curing rate was adjusted to 65%, and the
製造された放熱基板に対し、予め半導体チップを実装したリードフレームに加熱、接合した後、硬化させ、接合体にトランスファーモールド成型し、樹脂モールド成型した後、160℃で5時間追加硬化し、電子部品を得た。このときの接着層1の硬化率は100%であった。 The manufactured heat dissipation board is heated and bonded to a lead frame on which a semiconductor chip has been mounted in advance, and then cured, and transfer molded to a bonded body, resin molded, and then additionally cured at 160 ° C. for 5 hours. I got the parts. At this time, the curing rate of the adhesive layer 1 was 100%.
接着層1と硬化層2の密着性は、超音波探査装置(日立ファインテック社製FS300II)にて評価した。評価方法は、この装置での接着層1と硬化層2の間の密着性が悪い場合、すなわち剥離がある場合、観察画像が白くなるので、白い部分の有無で判断した。実施例1での剥離は観察されなかった。 The adhesion between the adhesive layer 1 and the hardened layer 2 was evaluated with an ultrasonic exploration apparatus (FS300II manufactured by Hitachi Finetech). In the evaluation method, when the adhesion between the adhesive layer 1 and the cured layer 2 in this apparatus is poor, that is, when there is peeling, the observation image becomes white. Peeling in Example 1 was not observed.
絶縁性の評価は、半導体チップと接合しているリードフレームとアルミニウムの耐電圧をJIS C 2110に規定された段階昇圧法で、前記電子部品を絶縁オイル中に入れ評価した。実施例1での耐電圧は、6.0kVと良好であった。 The insulation was evaluated by placing the electronic component in insulating oil by the step-up method defined in JIS C 2110, withstanding voltage of the lead frame and aluminum bonded to the semiconductor chip. The withstand voltage in Example 1 was as good as 6.0 kV.
(実施例2)
厚さ0.5mmのタフピッチ銅上に、硬化層2の厚みが100μmに塗布後、金属層1としての粗さ19μmの電解銅箔を貼り合わせ、加熱により硬化率を90%にし、前記電解銅箔を化学薬品によるエッチングし硬化層2に凹凸を作製した以外は、実施例1と同様のものである。
(Example 2)
After applying the thickness of the hardened layer 2 to 100 μm on a 0.5 mm thick tough pitch copper, an electroplated copper foil having a roughness of 19 μm as the metal layer 1 is bonded, and the hardening rate is set to 90% by heating. Example 1 is the same as Example 1 except that the foil is etched with a chemical to produce irregularities in the cured layer 2.
実施例2の電子部品でも剥離がなく、耐電圧5.5kVと良好な絶縁性を有していた。 The electronic component of Example 2 was not peeled off and had a good insulation property with a withstand voltage of 5.5 kV.
(比較例)
厚さ0.5mmのタフピッチ銅上に、硬化層2の厚みが100μmに塗布後、金属層1としての表面粗さ0.07μmのSUS製の鏡面板を貼り合わせ、加熱により硬化率を90%にした。前記鏡面板を化学薬品によるエッチングし、硬化層に凹凸を作製した以外は、実施例1と同様のものである。
(Comparative example)
On a tough pitch copper with a thickness of 0.5 mm, after the cured layer 2 is applied to a thickness of 100 μm, a SUS mirror plate with a surface roughness of 0.07 μm as the metal layer 1 is bonded, and the curing rate is 90% by heating. I made it. Example 1 is the same as Example 1 except that the mirror plate is etched with a chemical to produce irregularities on the cured layer.
比較例の電子部品では絶縁層間で剥離が観察され、耐電圧4.0kVであった。 In the electronic component of the comparative example, peeling was observed between the insulating layers, and the withstand voltage was 4.0 kV.
Claims (7)
An electronic component comprising: the electronic component according to claim 6; a semiconductor element electrically connected to the lead frame; and a thermosetting resin that seals an outer periphery of the electronic component and the semiconductor element.
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