JP5747668B2 - 発振回路 - Google Patents
発振回路 Download PDFInfo
- Publication number
- JP5747668B2 JP5747668B2 JP2011128973A JP2011128973A JP5747668B2 JP 5747668 B2 JP5747668 B2 JP 5747668B2 JP 2011128973 A JP2011128973 A JP 2011128973A JP 2011128973 A JP2011128973 A JP 2011128973A JP 5747668 B2 JP5747668 B2 JP 5747668B2
- Authority
- JP
- Japan
- Prior art keywords
- pair
- transmission lines
- pads
- bonding wire
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1218—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the generator being of the balanced type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
- H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0002—Types of oscillators
- H03B2200/0008—Colpitts oscillator
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Description
Bipolar Transistor)とした。また、伝送線路14aおよび14bは、GaAs基板の下面にグランド金属が形成され、GaAs基板の上面に配線パターンが形成されたマイクロストリップ線路とした。合成回路18は、基本波における逆位相の発振信号を合成している。
Controlled Oscllator)を例に説明した。VCO以外の発振回路でもよい。また、実施例1のシミュレーションは、負性抵抗回路10aおよび10bのトランジスタとしてGaAs系HBTを用いて行なった。負性抵抗回路10aおよび10bのトランジスタは、InP系HBT、GaAs系FET(Field
Effect Transistor)またはGaN系FETでもよい。位相雑音を低減する観点からはバイポーラトランジスタを用いることが好ましい。また、伝送線路14aおよび14bは、トランジスタと同じチップに形成されているとし、伝送線路14aおよび14bが形成される基板としてGaAs基板を用いた。伝送線路14aおよび14bが形成される基板は、InP基板、SiC基板等でもよい。さらに、伝送線路14aおよび14bは、樹脂またはセラミック等の基板に形成されていてもよい。さらに、伝送線路14aおよび14bとしてマイクロストリップ線路の例を説明したが、コプレーナ線路等の伝送線路でもよい。
12a、12b 共振回路
14a、14b 伝送線路
16a、16b バラクタダイオード
18 合成回路
40a、40b パッド
41a、41b 位置
42 ボンディングワイヤ
44a、44b パッド
45a、45b 位置
46a、46b フィード
Claims (9)
- 一対の負性抵抗回路と、
前記一対の負性抵抗回路にそれぞれ接続された一対の伝送線路と、
前記一対の伝送線路にそれぞれ対称に設けられ、前記一対の伝送線路の間をボンディングワイヤによって互いに接続可能な一対のパッドと、
前記一対の負性抵抗回路の出力信号を合成する合成回路と、
を有することを特徴とする発振回路。 - 前記一対のパッドの間を互いに接続するボンディングワイヤを有することを特徴とする請求項1に記載の発振回路。
- 前記合成回路は、前記一対の負性抵抗回路の出力信号を基本波逆相かつ2倍波同相で合成することを特徴とする請求項1または2記載の発振回路。
- 前記一対のパッドは、前記一対の伝送線路の上にそれぞれ設けられていることを特徴とする請求項1から3のいずれか一項に記載の発振回路。
- 前記一対のパッドは、前記一対の伝送線路から離間した位置にそれぞれ設けられていることを特徴とする請求項1から3のいずれか一項に記載の発振回路。
- 前記一対のパッドと前記一対の伝送線路との間に、幅が前記パッドの幅より狭いフィードがそれぞれ設けられていることを特徴とする請求項5に記載の発振回路。
- 前記一対の伝送線路それぞれに接続された一対のバラクタダイオードを有することを特徴とする請求項1から6のいずれか一項に記載の発振回路。
- 前記合成回路の出力周波数は、5GHz以上であることを特徴とする請求項1から7のいずれか一項に記載の発振回路。
- 前記一対のパッドの位置は、前記一対の負性抵抗回路の出力信号の基本波波長λに対して±1/10λ以内の範囲で対称に配置されてなることを特徴とする請求項1から8のいずれか一項記載の発振回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011128973A JP5747668B2 (ja) | 2011-06-09 | 2011-06-09 | 発振回路 |
US13/492,066 US8729970B2 (en) | 2011-06-09 | 2012-06-08 | Oscillator circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011128973A JP5747668B2 (ja) | 2011-06-09 | 2011-06-09 | 発振回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012257073A JP2012257073A (ja) | 2012-12-27 |
JP5747668B2 true JP5747668B2 (ja) | 2015-07-15 |
Family
ID=47292681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011128973A Expired - Fee Related JP5747668B2 (ja) | 2011-06-09 | 2011-06-09 | 発振回路 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8729970B2 (ja) |
JP (1) | JP5747668B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8957738B1 (en) * | 2012-10-18 | 2015-02-17 | Hittite Microwave Corporation | Voltage controlled oscillator |
US9209744B1 (en) | 2013-02-13 | 2015-12-08 | M/A-Com Technology Solutions Holdings, Inc. | Laminate-based voltage-controlled oscillator |
JP6373010B2 (ja) | 2013-03-12 | 2018-08-15 | キヤノン株式会社 | 発振素子 |
KR101563408B1 (ko) * | 2013-12-31 | 2015-10-27 | 중앙대학교 산학협력단 | 저 전력과 저 위상 잡음의 특성을 가지는 컴플리멘터리 콜피츠 전압 제어 발진기 |
DE102016109387A1 (de) * | 2015-05-26 | 2016-12-01 | Samsung Electronics Co., Ltd. | Ein-Chip-System mit Taktverwaltungseinheit und Verfahren zum Betreiben des Ein-Chip-Systems |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3869678A (en) * | 1973-12-18 | 1975-03-04 | Rca Corp | Multiple transistor microwave amplifier |
JPS5723441B2 (ja) * | 1974-05-29 | 1982-05-19 | ||
JP2881716B2 (ja) * | 1994-03-28 | 1999-04-12 | 株式会社ミリウェイブ | 発振器 |
JPH0998005A (ja) * | 1995-09-29 | 1997-04-08 | Nec Corp | 配線基板 |
EP0893878B1 (en) * | 1997-07-25 | 2006-05-10 | Matsushita Electric Industrial Co., Ltd. | High frequency oscillating circuit |
US5821820A (en) * | 1997-10-15 | 1998-10-13 | Motorola Inc. | Dual band voltage controlled oscillator |
US6011446A (en) * | 1998-05-21 | 2000-01-04 | Delphi Components, Inc. | RF/microwave oscillator having frequency-adjustable DC bias circuit |
JP2000323931A (ja) | 1999-05-06 | 2000-11-24 | Matsushita Electric Ind Co Ltd | プッシュプッシュ発振器 |
JP2004312104A (ja) * | 2003-04-02 | 2004-11-04 | Nec Corp | 電圧制御発振器 |
US7696833B2 (en) * | 2007-01-29 | 2010-04-13 | Fujitsu Media Devices Limited | Oscillator |
-
2011
- 2011-06-09 JP JP2011128973A patent/JP5747668B2/ja not_active Expired - Fee Related
-
2012
- 2012-06-08 US US13/492,066 patent/US8729970B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20120313719A1 (en) | 2012-12-13 |
US8729970B2 (en) | 2014-05-20 |
JP2012257073A (ja) | 2012-12-27 |
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