JP5735522B2 - 化学気相成長コーティング、物品、及び方法 - Google Patents

化学気相成長コーティング、物品、及び方法 Download PDF

Info

Publication number
JP5735522B2
JP5735522B2 JP2012536943A JP2012536943A JP5735522B2 JP 5735522 B2 JP5735522 B2 JP 5735522B2 JP 2012536943 A JP2012536943 A JP 2012536943A JP 2012536943 A JP2012536943 A JP 2012536943A JP 5735522 B2 JP5735522 B2 JP 5735522B2
Authority
JP
Japan
Prior art keywords
layer
coating
functionalized
vapor deposition
chemical vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012536943A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013508563A (ja
JP2013508563A5 (enExample
Inventor
エー．スミス デイビッド
エー．スミス デイビッド
ビー．マッツェラ ジェイムズ
ビー．マッツェラ ジェイムズ
エイチ．シルビス ポール
エイチ．シルビス ポール
エー．バロン ゲイリー
エー．バロン ゲイリー
Original Assignee
シルコテック コーポレイション
シルコテック コーポレイション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シルコテック コーポレイション, シルコテック コーポレイション filed Critical シルコテック コーポレイション
Publication of JP2013508563A publication Critical patent/JP2013508563A/ja
Publication of JP2013508563A5 publication Critical patent/JP2013508563A5/ja
Application granted granted Critical
Publication of JP5735522B2 publication Critical patent/JP5735522B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2202/00—Metallic substrate
    • B05D2202/10—Metallic substrate based on Fe
    • B05D2202/15—Stainless steel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP2012536943A 2009-10-27 2010-10-26 化学気相成長コーティング、物品、及び方法 Active JP5735522B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25523709P 2009-10-27 2009-10-27
US61/255,237 2009-10-27
US26722809P 2009-12-07 2009-12-07
US61/267,228 2009-12-07
PCT/US2010/054058 WO2011056550A1 (en) 2009-10-27 2010-10-26 Chemical vapor deposition coating, article, and method

Publications (3)

Publication Number Publication Date
JP2013508563A JP2013508563A (ja) 2013-03-07
JP2013508563A5 JP2013508563A5 (enExample) 2013-12-19
JP5735522B2 true JP5735522B2 (ja) 2015-06-17

Family

ID=43063316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012536943A Active JP5735522B2 (ja) 2009-10-27 2010-10-26 化学気相成長コーティング、物品、及び方法

Country Status (7)

Country Link
US (2) US9777368B2 (enExample)
EP (1) EP2494087B1 (enExample)
JP (1) JP5735522B2 (enExample)
KR (3) KR101911196B1 (enExample)
CN (2) CN102741452A (enExample)
ES (1) ES2859458T3 (enExample)
WO (1) WO2011056550A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9340880B2 (en) 2009-10-27 2016-05-17 Silcotek Corp. Semiconductor fabrication process
WO2011056550A1 (en) 2009-10-27 2011-05-12 Silcotek Corp. Chemical vapor deposition coating, article, and method
KR101854162B1 (ko) 2010-10-05 2018-06-20 실코텍 코포레이션 내마모성 코팅, 물건 및 방법
TW201319299A (zh) * 2011-09-13 2013-05-16 Applied Materials Inc 用於低溫電漿輔助沉積的活化矽前驅物
US20150298165A1 (en) * 2012-03-26 2015-10-22 Silcotek Corp. Coated article and chemical vapor deposition process
US9975143B2 (en) 2013-05-14 2018-05-22 Silcotek Corp. Chemical vapor deposition functionalization
US20150030885A1 (en) * 2013-07-29 2015-01-29 Silcotek Corp. Coated article and chemical vapor deposition process
US11292924B2 (en) 2014-04-08 2022-04-05 Silcotek Corp. Thermal chemical vapor deposition coated article and process
SG10201506024WA (en) * 2014-08-21 2016-03-30 Silcotek Corp Semiconductor fabrication process
SG10201506694QA (en) * 2014-09-03 2016-04-28 Silcotek Corp Chemical vapor deposition process and coated article
US9915001B2 (en) * 2014-09-03 2018-03-13 Silcotek Corp. Chemical vapor deposition process and coated article
US10316408B2 (en) * 2014-12-12 2019-06-11 Silcotek Corp. Delivery device, manufacturing system and process of manufacturing
US10534120B2 (en) 2015-04-03 2020-01-14 Moxtek, Inc. Wire grid polarizer with protected wires
US10054717B2 (en) 2015-04-03 2018-08-21 Moxtek, Inc. Oxidation and moisture barrier layers for wire grid polarizer
US9703028B2 (en) 2015-04-03 2017-07-11 Moxtek, Inc. Wire grid polarizer with phosphonate protective coating
US20160291227A1 (en) 2015-04-03 2016-10-06 Moxtek, Inc. Wire Grid Polarizer with Water-Soluble Materials
WO2017040623A1 (en) 2015-09-01 2017-03-09 Silcotek Corp. Thermal chemical vapor deposition coating
CN105112886B (zh) * 2015-09-18 2018-04-17 杭州天净检测技术有限公司 一种惰性表面处理技术
US10029346B2 (en) * 2015-10-16 2018-07-24 Applied Materials, Inc. External clamp ring for a chemical mechanical polishing carrier head
GB201520964D0 (en) 2015-11-27 2016-01-13 Porvair Filtration Group Ltd Filtration material and method of manufacture thereof
US10323321B1 (en) 2016-01-08 2019-06-18 Silcotek Corp. Thermal chemical vapor deposition process and coated article
US20170211180A1 (en) * 2016-01-22 2017-07-27 Silcotek Corp. Diffusion-rate-limited thermal chemical vapor deposition coating
US10487403B2 (en) * 2016-12-13 2019-11-26 Silcotek Corp Fluoro-containing thermal chemical vapor deposition process and article
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
US11709156B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved analytical analysis
US12180581B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US12181452B2 (en) 2017-09-18 2024-12-31 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
US11709155B2 (en) 2017-09-18 2023-07-25 Waters Technologies Corporation Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes
JP2019108569A (ja) * 2017-12-15 2019-07-04 シルコテック コーポレーション フッ素含有熱化学気相堆積方法および物品
CN109957788A (zh) * 2017-12-22 2019-07-02 西尔科特克公司 含氟热化学气相沉积方法和制品
KR102207529B1 (ko) 2018-03-14 2021-01-26 주식회사 엘지화학 비정질 실리콘-탄소 복합체, 이의 제조방법 및 이를 포함하는 리튬 이차전지
CN112203778B (zh) * 2018-06-22 2022-08-30 林德有限责任公司 气缸阀以及用于抑制污染物在气缸和气缸阀中形成的方法
EP3887563B1 (en) * 2018-11-29 2024-03-06 Silcotek Corp. Fluid contact process, coated article, and coating process
CN113507971A (zh) 2019-02-27 2021-10-15 沃特世科技公司 用于最大程度减少分析物吸附的色谱密封件和经涂覆的流动路径
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
KR20220075426A (ko) * 2019-10-10 2022-06-08 램 리써치 코포레이션 플라즈마 챔버 컴포넌트의 무기 코팅
US11918936B2 (en) 2020-01-17 2024-03-05 Waters Technologies Corporation Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding
CN113707526B (zh) * 2020-05-20 2024-05-24 中微半导体设备(上海)股份有限公司 零部件、形成耐等离子体涂层的方法和等离子体反应装置
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article
WO2022026070A1 (en) 2020-07-30 2022-02-03 Silcotek Corp. Heat exchanger process
CN116391122A (zh) 2020-09-24 2023-07-04 沃特世科技公司 用于反应性分子分离的色谱硬件改进
CN116060274B (zh) * 2021-10-29 2023-12-19 佛山市思博睿科技有限公司 等离子化学气相沉积自修复疏水纳米膜的制备方法
CN114950900A (zh) * 2022-04-22 2022-08-30 上海酷聚科技有限公司 一种有机膜层的制备方法、有机膜层结构及沉积设备
US20230360906A1 (en) * 2022-05-05 2023-11-09 Applied Materials, Inc. Silicon-and-carbon-containing materials with low dielectric constants
CN115125512A (zh) * 2022-07-11 2022-09-30 杭州师范大学 利用四甲基二硅氧烷热分解沉积技术的基材表面惰性处理方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2371524A1 (fr) 1976-11-18 1978-06-16 Alsthom Atlantique Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma
US4579752A (en) 1984-10-29 1986-04-01 At&T Bell Laboratories Enhanced corrosion resistance of metal surfaces
US4671997A (en) 1985-04-08 1987-06-09 United Technologies Corporation Gas turbine composite parts
US4714632A (en) 1985-12-11 1987-12-22 Air Products And Chemicals, Inc. Method of producing silicon diffusion coatings on metal articles
US4792460A (en) 1986-07-15 1988-12-20 Electric Power Research Institute, Inc. Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium
US4741964A (en) 1986-07-17 1988-05-03 International Business Machines Corporation Structure containing hydrogenated amorphous silicon and process
US4749631B1 (en) 1986-12-04 1993-03-23 Multilayer ceramics from silicate esters
US4753856A (en) 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
US4842888A (en) 1988-04-07 1989-06-27 Dow Corning Corporation Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors
US5160544A (en) 1990-03-20 1992-11-03 Diamonex Incorporated Hot filament chemical vapor deposition reactor
US5052339A (en) * 1990-10-16 1991-10-01 Air Products And Chemicals, Inc. Radio frequency plasma enhanced chemical vapor deposition process and reactor
FR2675947A1 (fr) 1991-04-23 1992-10-30 France Telecom Procede de passivation locale d'un substrat par une couche de carbone amorphe hydrogene et procede de fabrication de transistors en couches minces sur ce substrat passive.
TW203633B (enExample) 1991-06-03 1993-04-11 L Air Liquide Sa Pour L Expl Des Proce
CA2104340A1 (en) 1992-08-31 1994-03-01 Grish Chandra Hermetic protection for integrated circuits
US5825078A (en) 1992-09-23 1998-10-20 Dow Corning Corporation Hermetic protection for integrated circuits
US5299731A (en) 1993-02-22 1994-04-05 L'air Liquide Corrosion resistant welding of stainless steel
TW347149U (en) 1993-02-26 1998-12-01 Dow Corning Integrated circuits protected from the environment by ceramic and barrier metal layers
JPH0714780A (ja) * 1993-06-24 1995-01-17 Hitachi Ltd 珪素薄膜の成膜方法
EP0653501B1 (en) 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
US5818071A (en) 1995-02-02 1998-10-06 Dow Corning Corporation Silicon carbide metal diffusion barrier layer
US5780163A (en) * 1996-06-05 1998-07-14 Dow Corning Corporation Multilayer coating for microelectronic devices
US6511760B1 (en) 1998-02-27 2003-01-28 Restek Corporation Method of passivating a gas vessel or component of a gas transfer system using a silicon overlay coating
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6444326B1 (en) * 1999-03-05 2002-09-03 Restek Corporation Surface modification of solid supports through the thermal decomposition and functionalization of silanes
US6472076B1 (en) * 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6531398B1 (en) * 2000-10-30 2003-03-11 Applied Materials, Inc. Method of depositing organosillicate layers
US7070833B2 (en) 2003-03-05 2006-07-04 Restek Corporation Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments
US7258752B2 (en) * 2003-03-26 2007-08-21 Ut-Battelle Llc Wrought stainless steel compositions having engineered microstructures for improved heat resistance
US7867627B2 (en) 2004-12-13 2011-01-11 Silcotek Corporation Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
US7902080B2 (en) * 2006-05-30 2011-03-08 Applied Materials, Inc. Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
WO2009032488A1 (en) * 2007-08-28 2009-03-12 International Business Machines Corporation Improved low k porous sicoh dielectric and integration with post film formation treatment
WO2011056550A1 (en) 2009-10-27 2011-05-12 Silcotek Corp. Chemical vapor deposition coating, article, and method
KR101854162B1 (ko) 2010-10-05 2018-06-20 실코텍 코포레이션 내마모성 코팅, 물건 및 방법
US20150298165A1 (en) 2012-03-26 2015-10-22 Silcotek Corp. Coated article and chemical vapor deposition process
US20150030885A1 (en) 2013-07-29 2015-01-29 Silcotek Corp. Coated article and chemical vapor deposition process
US11292924B2 (en) 2014-04-08 2022-04-05 Silcotek Corp. Thermal chemical vapor deposition coated article and process

Also Published As

Publication number Publication date
KR101773213B1 (ko) 2017-08-30
US20190032201A1 (en) 2019-01-31
US20120251797A1 (en) 2012-10-04
US9777368B2 (en) 2017-10-03
KR101932899B1 (ko) 2018-12-26
KR20170100041A (ko) 2017-09-01
ES2859458T3 (es) 2021-10-04
JP2013508563A (ja) 2013-03-07
KR20120120120A (ko) 2012-11-01
EP2494087A1 (en) 2012-09-05
WO2011056550A1 (en) 2011-05-12
CN106319477A (zh) 2017-01-11
EP2494087B1 (en) 2020-12-30
KR20180115356A (ko) 2018-10-22
US10731247B2 (en) 2020-08-04
KR101911196B1 (ko) 2018-10-24
CN102741452A (zh) 2012-10-17

Similar Documents

Publication Publication Date Title
JP5735522B2 (ja) 化学気相成長コーティング、物品、及び方法
US11807777B2 (en) Amorphous coating
KR102018241B1 (ko) 코팅된 물품 및 화학적 기상증착방법
US20150030885A1 (en) Coated article and chemical vapor deposition process
EP1939323B1 (en) Cyclic chemical vapor deposition of metal-silicon containing films
US20160289824A1 (en) Article including a coating and process including an article with a coating
WO2024162361A1 (ja) 保護膜とその製造方法
US20160289124A1 (en) Thermal chemical vapor deposition product and process of using a thermal chemical vapor deposition product

Legal Events

Date Code Title Description
A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20131023

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131024

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131024

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140228

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140304

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140604

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140826

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150317

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150416

R150 Certificate of patent or registration of utility model

Ref document number: 5735522

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250