ES2859458T3 - Recubrimiento, artículo y método de deposición química de vapor - Google Patents
Recubrimiento, artículo y método de deposición química de vapor Download PDFInfo
- Publication number
- ES2859458T3 ES2859458T3 ES10771619T ES10771619T ES2859458T3 ES 2859458 T3 ES2859458 T3 ES 2859458T3 ES 10771619 T ES10771619 T ES 10771619T ES 10771619 T ES10771619 T ES 10771619T ES 2859458 T3 ES2859458 T3 ES 2859458T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- vapor deposition
- dimethylsilane
- substrate
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 38
- 238000000576 coating method Methods 0.000 title claims abstract description 38
- 239000011248 coating agent Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 62
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 29
- 230000003647 oxidation Effects 0.000 claims description 28
- 239000003153 chemical reaction reagent Substances 0.000 claims description 15
- 230000001590 oxidative effect Effects 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 238000007306 functionalization reaction Methods 0.000 claims description 9
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 25
- 229910052799 carbon Inorganic materials 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000007789 gas Substances 0.000 description 17
- 230000007423 decrease Effects 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 230000008901 benefit Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 229910002808 Si–O–Si Inorganic materials 0.000 description 8
- 150000002430 hydrocarbons Chemical group 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910008051 Si-OH Inorganic materials 0.000 description 6
- 229910006358 Si—OH Inorganic materials 0.000 description 6
- YENOLDYITNSPMQ-UHFFFAOYSA-N carboxysilicon Chemical compound OC([Si])=O YENOLDYITNSPMQ-UHFFFAOYSA-N 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 6
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 6
- 229910018540 Si C Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 4
- 238000004566 IR spectroscopy Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 229910000619 316 stainless steel Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910014033 C-OH Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 229910014570 C—OH Inorganic materials 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical class [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 150000003460 sulfonic acids Chemical class 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 150000001343 alkyl silanes Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000157 electrochemical-induced impedance spectroscopy Methods 0.000 description 1
- -1 ethylene, propylene Chemical group 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000011221 initial treatment Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000003863 metallic catalyst Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000003642 reactive oxygen metabolite Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- ACECBHHKGNTVPB-UHFFFAOYSA-N silylformic acid Chemical compound OC([SiH3])=O ACECBHHKGNTVPB-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2202/00—Metallic substrate
- B05D2202/10—Metallic substrate based on Fe
- B05D2202/15—Stainless steel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25523709P | 2009-10-27 | 2009-10-27 | |
| US26722809P | 2009-12-07 | 2009-12-07 | |
| PCT/US2010/054058 WO2011056550A1 (en) | 2009-10-27 | 2010-10-26 | Chemical vapor deposition coating, article, and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2859458T3 true ES2859458T3 (es) | 2021-10-04 |
Family
ID=43063316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES10771619T Active ES2859458T3 (es) | 2009-10-27 | 2010-10-26 | Recubrimiento, artículo y método de deposición química de vapor |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9777368B2 (enExample) |
| EP (1) | EP2494087B1 (enExample) |
| JP (1) | JP5735522B2 (enExample) |
| KR (3) | KR101911196B1 (enExample) |
| CN (2) | CN102741452A (enExample) |
| ES (1) | ES2859458T3 (enExample) |
| WO (1) | WO2011056550A1 (enExample) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9340880B2 (en) | 2009-10-27 | 2016-05-17 | Silcotek Corp. | Semiconductor fabrication process |
| WO2011056550A1 (en) | 2009-10-27 | 2011-05-12 | Silcotek Corp. | Chemical vapor deposition coating, article, and method |
| KR101854162B1 (ko) | 2010-10-05 | 2018-06-20 | 실코텍 코포레이션 | 내마모성 코팅, 물건 및 방법 |
| TW201319299A (zh) * | 2011-09-13 | 2013-05-16 | Applied Materials Inc | 用於低溫電漿輔助沉積的活化矽前驅物 |
| US20150298165A1 (en) * | 2012-03-26 | 2015-10-22 | Silcotek Corp. | Coated article and chemical vapor deposition process |
| US9975143B2 (en) | 2013-05-14 | 2018-05-22 | Silcotek Corp. | Chemical vapor deposition functionalization |
| US20150030885A1 (en) * | 2013-07-29 | 2015-01-29 | Silcotek Corp. | Coated article and chemical vapor deposition process |
| US11292924B2 (en) | 2014-04-08 | 2022-04-05 | Silcotek Corp. | Thermal chemical vapor deposition coated article and process |
| SG10201506024WA (en) * | 2014-08-21 | 2016-03-30 | Silcotek Corp | Semiconductor fabrication process |
| SG10201506694QA (en) * | 2014-09-03 | 2016-04-28 | Silcotek Corp | Chemical vapor deposition process and coated article |
| US9915001B2 (en) * | 2014-09-03 | 2018-03-13 | Silcotek Corp. | Chemical vapor deposition process and coated article |
| US10316408B2 (en) * | 2014-12-12 | 2019-06-11 | Silcotek Corp. | Delivery device, manufacturing system and process of manufacturing |
| US10534120B2 (en) | 2015-04-03 | 2020-01-14 | Moxtek, Inc. | Wire grid polarizer with protected wires |
| US10054717B2 (en) | 2015-04-03 | 2018-08-21 | Moxtek, Inc. | Oxidation and moisture barrier layers for wire grid polarizer |
| US9703028B2 (en) | 2015-04-03 | 2017-07-11 | Moxtek, Inc. | Wire grid polarizer with phosphonate protective coating |
| US20160291227A1 (en) | 2015-04-03 | 2016-10-06 | Moxtek, Inc. | Wire Grid Polarizer with Water-Soluble Materials |
| WO2017040623A1 (en) | 2015-09-01 | 2017-03-09 | Silcotek Corp. | Thermal chemical vapor deposition coating |
| CN105112886B (zh) * | 2015-09-18 | 2018-04-17 | 杭州天净检测技术有限公司 | 一种惰性表面处理技术 |
| US10029346B2 (en) * | 2015-10-16 | 2018-07-24 | Applied Materials, Inc. | External clamp ring for a chemical mechanical polishing carrier head |
| GB201520964D0 (en) | 2015-11-27 | 2016-01-13 | Porvair Filtration Group Ltd | Filtration material and method of manufacture thereof |
| US10323321B1 (en) | 2016-01-08 | 2019-06-18 | Silcotek Corp. | Thermal chemical vapor deposition process and coated article |
| US20170211180A1 (en) * | 2016-01-22 | 2017-07-27 | Silcotek Corp. | Diffusion-rate-limited thermal chemical vapor deposition coating |
| US10487403B2 (en) * | 2016-12-13 | 2019-11-26 | Silcotek Corp | Fluoro-containing thermal chemical vapor deposition process and article |
| US11161324B2 (en) | 2017-09-13 | 2021-11-02 | Silcotek Corp. | Corrosion-resistant coated article and thermal chemical vapor deposition coating process |
| US11709156B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved analytical analysis |
| US12180581B2 (en) | 2017-09-18 | 2024-12-31 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| US12181452B2 (en) | 2017-09-18 | 2024-12-31 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| US11709155B2 (en) | 2017-09-18 | 2023-07-25 | Waters Technologies Corporation | Use of vapor deposition coated flow paths for improved chromatography of metal interacting analytes |
| JP2019108569A (ja) * | 2017-12-15 | 2019-07-04 | シルコテック コーポレーション | フッ素含有熱化学気相堆積方法および物品 |
| CN109957788A (zh) * | 2017-12-22 | 2019-07-02 | 西尔科特克公司 | 含氟热化学气相沉积方法和制品 |
| KR102207529B1 (ko) | 2018-03-14 | 2021-01-26 | 주식회사 엘지화학 | 비정질 실리콘-탄소 복합체, 이의 제조방법 및 이를 포함하는 리튬 이차전지 |
| CN112203778B (zh) * | 2018-06-22 | 2022-08-30 | 林德有限责任公司 | 气缸阀以及用于抑制污染物在气缸和气缸阀中形成的方法 |
| EP3887563B1 (en) * | 2018-11-29 | 2024-03-06 | Silcotek Corp. | Fluid contact process, coated article, and coating process |
| CN113507971A (zh) | 2019-02-27 | 2021-10-15 | 沃特世科技公司 | 用于最大程度减少分析物吸附的色谱密封件和经涂覆的流动路径 |
| WO2020252306A1 (en) | 2019-06-14 | 2020-12-17 | Silcotek Corp. | Nano-wire growth |
| KR20220075426A (ko) * | 2019-10-10 | 2022-06-08 | 램 리써치 코포레이션 | 플라즈마 챔버 컴포넌트의 무기 코팅 |
| US11918936B2 (en) | 2020-01-17 | 2024-03-05 | Waters Technologies Corporation | Performance and dynamic range for oligonucleotide bioanalysis through reduction of non specific binding |
| CN113707526B (zh) * | 2020-05-20 | 2024-05-24 | 中微半导体设备(上海)股份有限公司 | 零部件、形成耐等离子体涂层的方法和等离子体反应装置 |
| US12473635B2 (en) | 2020-06-03 | 2025-11-18 | Silcotek Corp. | Dielectric article |
| WO2022026070A1 (en) | 2020-07-30 | 2022-02-03 | Silcotek Corp. | Heat exchanger process |
| CN116391122A (zh) | 2020-09-24 | 2023-07-04 | 沃特世科技公司 | 用于反应性分子分离的色谱硬件改进 |
| CN116060274B (zh) * | 2021-10-29 | 2023-12-19 | 佛山市思博睿科技有限公司 | 等离子化学气相沉积自修复疏水纳米膜的制备方法 |
| CN114950900A (zh) * | 2022-04-22 | 2022-08-30 | 上海酷聚科技有限公司 | 一种有机膜层的制备方法、有机膜层结构及沉积设备 |
| US20230360906A1 (en) * | 2022-05-05 | 2023-11-09 | Applied Materials, Inc. | Silicon-and-carbon-containing materials with low dielectric constants |
| CN115125512A (zh) * | 2022-07-11 | 2022-09-30 | 杭州师范大学 | 利用四甲基二硅氧烷热分解沉积技术的基材表面惰性处理方法 |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2371524A1 (fr) | 1976-11-18 | 1978-06-16 | Alsthom Atlantique | Procede de depot d'une couche mince par decomposition d'un gaz dans un plasma |
| US4579752A (en) | 1984-10-29 | 1986-04-01 | At&T Bell Laboratories | Enhanced corrosion resistance of metal surfaces |
| US4671997A (en) | 1985-04-08 | 1987-06-09 | United Technologies Corporation | Gas turbine composite parts |
| US4714632A (en) | 1985-12-11 | 1987-12-22 | Air Products And Chemicals, Inc. | Method of producing silicon diffusion coatings on metal articles |
| US4792460A (en) | 1986-07-15 | 1988-12-20 | Electric Power Research Institute, Inc. | Method for production of polysilanes and polygermanes, and deposition of hydrogenated amorphous silicon, alloys thereof, or hydrogenated amorphous germanium |
| US4741964A (en) | 1986-07-17 | 1988-05-03 | International Business Machines Corporation | Structure containing hydrogenated amorphous silicon and process |
| US4749631B1 (en) | 1986-12-04 | 1993-03-23 | Multilayer ceramics from silicate esters | |
| US4753856A (en) | 1987-01-02 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from silicate esters and metal oxides |
| US4842888A (en) | 1988-04-07 | 1989-06-27 | Dow Corning Corporation | Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors |
| US5160544A (en) | 1990-03-20 | 1992-11-03 | Diamonex Incorporated | Hot filament chemical vapor deposition reactor |
| US5052339A (en) * | 1990-10-16 | 1991-10-01 | Air Products And Chemicals, Inc. | Radio frequency plasma enhanced chemical vapor deposition process and reactor |
| FR2675947A1 (fr) | 1991-04-23 | 1992-10-30 | France Telecom | Procede de passivation locale d'un substrat par une couche de carbone amorphe hydrogene et procede de fabrication de transistors en couches minces sur ce substrat passive. |
| TW203633B (enExample) | 1991-06-03 | 1993-04-11 | L Air Liquide Sa Pour L Expl Des Proce | |
| CA2104340A1 (en) | 1992-08-31 | 1994-03-01 | Grish Chandra | Hermetic protection for integrated circuits |
| US5825078A (en) | 1992-09-23 | 1998-10-20 | Dow Corning Corporation | Hermetic protection for integrated circuits |
| US5299731A (en) | 1993-02-22 | 1994-04-05 | L'air Liquide | Corrosion resistant welding of stainless steel |
| TW347149U (en) | 1993-02-26 | 1998-12-01 | Dow Corning | Integrated circuits protected from the environment by ceramic and barrier metal layers |
| JPH0714780A (ja) * | 1993-06-24 | 1995-01-17 | Hitachi Ltd | 珪素薄膜の成膜方法 |
| EP0653501B1 (en) | 1993-11-11 | 1998-02-04 | Nissin Electric Company, Limited | Plasma-CVD method and apparatus |
| US5818071A (en) | 1995-02-02 | 1998-10-06 | Dow Corning Corporation | Silicon carbide metal diffusion barrier layer |
| US5780163A (en) * | 1996-06-05 | 1998-07-14 | Dow Corning Corporation | Multilayer coating for microelectronic devices |
| US6511760B1 (en) | 1998-02-27 | 2003-01-28 | Restek Corporation | Method of passivating a gas vessel or component of a gas transfer system using a silicon overlay coating |
| US6159871A (en) | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
| US6444326B1 (en) * | 1999-03-05 | 2002-09-03 | Restek Corporation | Surface modification of solid supports through the thermal decomposition and functionalization of silanes |
| US6472076B1 (en) * | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
| US6531398B1 (en) * | 2000-10-30 | 2003-03-11 | Applied Materials, Inc. | Method of depositing organosillicate layers |
| US7070833B2 (en) | 2003-03-05 | 2006-07-04 | Restek Corporation | Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments |
| US7258752B2 (en) * | 2003-03-26 | 2007-08-21 | Ut-Battelle Llc | Wrought stainless steel compositions having engineered microstructures for improved heat resistance |
| US7867627B2 (en) | 2004-12-13 | 2011-01-11 | Silcotek Corporation | Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures |
| US7678712B2 (en) * | 2005-03-22 | 2010-03-16 | Honeywell International, Inc. | Vapor phase treatment of dielectric materials |
| US7902080B2 (en) * | 2006-05-30 | 2011-03-08 | Applied Materials, Inc. | Deposition-plasma cure cycle process to enhance film quality of silicon dioxide |
| WO2009032488A1 (en) * | 2007-08-28 | 2009-03-12 | International Business Machines Corporation | Improved low k porous sicoh dielectric and integration with post film formation treatment |
| WO2011056550A1 (en) | 2009-10-27 | 2011-05-12 | Silcotek Corp. | Chemical vapor deposition coating, article, and method |
| KR101854162B1 (ko) | 2010-10-05 | 2018-06-20 | 실코텍 코포레이션 | 내마모성 코팅, 물건 및 방법 |
| US20150298165A1 (en) | 2012-03-26 | 2015-10-22 | Silcotek Corp. | Coated article and chemical vapor deposition process |
| US20150030885A1 (en) | 2013-07-29 | 2015-01-29 | Silcotek Corp. | Coated article and chemical vapor deposition process |
| US11292924B2 (en) | 2014-04-08 | 2022-04-05 | Silcotek Corp. | Thermal chemical vapor deposition coated article and process |
-
2010
- 2010-10-26 WO PCT/US2010/054058 patent/WO2011056550A1/en not_active Ceased
- 2010-10-26 US US13/504,533 patent/US9777368B2/en active Active - Reinstated
- 2010-10-26 CN CN2010800498267A patent/CN102741452A/zh active Pending
- 2010-10-26 ES ES10771619T patent/ES2859458T3/es active Active
- 2010-10-26 KR KR1020177023140A patent/KR101911196B1/ko active Active
- 2010-10-26 EP EP10771619.3A patent/EP2494087B1/en active Active
- 2010-10-26 KR KR1020187029570A patent/KR101932899B1/ko active Active
- 2010-10-26 CN CN201610697860.4A patent/CN106319477A/zh active Pending
- 2010-10-26 KR KR1020127010812A patent/KR101773213B1/ko active Active
- 2010-10-26 JP JP2012536943A patent/JP5735522B2/ja active Active
-
2017
- 2017-08-22 US US15/683,399 patent/US10731247B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101773213B1 (ko) | 2017-08-30 |
| US20190032201A1 (en) | 2019-01-31 |
| US20120251797A1 (en) | 2012-10-04 |
| US9777368B2 (en) | 2017-10-03 |
| KR101932899B1 (ko) | 2018-12-26 |
| KR20170100041A (ko) | 2017-09-01 |
| JP2013508563A (ja) | 2013-03-07 |
| KR20120120120A (ko) | 2012-11-01 |
| EP2494087A1 (en) | 2012-09-05 |
| WO2011056550A1 (en) | 2011-05-12 |
| CN106319477A (zh) | 2017-01-11 |
| JP5735522B2 (ja) | 2015-06-17 |
| EP2494087B1 (en) | 2020-12-30 |
| KR20180115356A (ko) | 2018-10-22 |
| US10731247B2 (en) | 2020-08-04 |
| KR101911196B1 (ko) | 2018-10-24 |
| CN102741452A (zh) | 2012-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES2859458T3 (es) | Recubrimiento, artículo y método de deposición química de vapor | |
| US20230383126A1 (en) | Amorphous coating | |
| KR102018241B1 (ko) | 코팅된 물품 및 화학적 기상증착방법 | |
| US11292924B2 (en) | Thermal chemical vapor deposition coated article and process | |
| US20150030885A1 (en) | Coated article and chemical vapor deposition process | |
| US20110177349A1 (en) | Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures | |
| JP2020527866A (ja) | 金属表面上にブロッキング層を堆積させるための方法 | |
| US20160289824A1 (en) | Article including a coating and process including an article with a coating | |
| US20190136371A1 (en) | Molybdenum substrate with an amorphous chemical vapor deposition coating | |
| US20160289124A1 (en) | Thermal chemical vapor deposition product and process of using a thermal chemical vapor deposition product | |
| Grow et al. | Plasma enhanced chemical vapor deposition of silicon nitride from novel organosilanes |