JP5731866B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

In the manufacturing process of a semiconductor device or a liquid crystal display device, a substrate processing apparatus for processing a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used.
A batch type substrate processing apparatus that collectively processes a plurality of substrates includes, for example, a chemical processing tank in which a chemical solution is stored, a rinse processing tank in which a rinsing liquid is stored, and a plurality of substrates between these processing tanks. And a transport robot that transports the substrates in a lump (see, for example, Patent Document 1). When a substrate is processed, a plurality of substrates are sequentially transferred to a chemical solution processing tank and a rinse processing tank by a transfer robot.

  On the other hand, a single-wafer type substrate processing apparatus that processes substrates one by one includes, for example, a spin chuck that horizontally holds and rotates a single substrate, and a processing liquid toward an upper surface of the substrate held by the spin chuck. (For example, refer to Patent Document 2). When the substrate is processed, the chemical liquid and the rinse liquid are sequentially discharged from the processing liquid nozzle toward the rotating substrate. The chemical liquid and the rinse liquid discharged from the processing liquid nozzle are supplied to the substrate and then scattered around the substrate.

Japanese Patent Laid-Open No. 5-190529 JP 2010-177371 A

  In a batch type substrate processing apparatus, it is necessary to store a certain amount of processing liquid in a processing tank regardless of the number of substrates to be processed. Therefore, it is difficult to reduce the consumption of the processing liquid. On the other hand, in a single wafer type substrate processing apparatus, since the processing liquid supplied to the substrate is discharged from the substrate, it is necessary to continue supplying the processing liquid to the substrate. For this reason, it is difficult to reduce the consumption of the processing liquid.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reduce the consumption of processing liquid.

In order to achieve the above object, a first aspect of the present invention is a full-surface treatment having a first substrate contact surface (41a, 41b) larger than the main surface of the substrate and capable of absorbing a treatment liquid and elastically deforming. Sponge (41) having a second substrate contact surface (49a, 49b) smaller than the main surface of the substrate, and a partial processing sponge (49) capable of absorbing the processing liquid and elastically deforming the sponge (41) 49), processing liquid supply means (40, 48) for supplying a processing liquid to the sponge, substrate holding means (21, 260) for holding the substrate (W), and holding the sponge and the substrate holding means. Contact means (21, 221) for supplying the processing liquid absorbed by the sponge to the main surface of the substrate by moving the main surface of the substrate being moved relative to each other and bringing them into contact with each other, and the contact means By controlling Wherein and a whole surface treatment sponges and partial processing one of a sponge and contact control means for contacting the major surface of the substrate held by the substrate holding unit of the sponge (4), the substrate processing apparatus (1, 201). The main surface of the substrate may be a surface that is a device forming surface, or may be a back surface opposite to the front surface. In this section, alphanumeric characters in parentheses represent reference numerals of corresponding components in the embodiments described later, but the scope of the claims is not limited by these reference numerals.

  According to this configuration, the contact means relatively moves the sponge supplied with the processing liquid by the processing liquid supply means and the substrate held by the substrate holding means to bring the sponge into contact with the main surface of the substrate. As a result, the sponge is elastically deformed and the treatment liquid absorbed by the sponge oozes out. Therefore, a thin liquid film (liquid film of the processing liquid) is formed, and this liquid film covers the main surface (which may be a part or all of the main surface) of the substrate. Therefore, it is possible to reliably supply the processing liquid to the portion of the substrate that is in contact with the sponge. Furthermore, since the processing liquid is instantaneously supplied to the substrate by the contact between the sponge and the substrate, the time required for supplying the processing liquid can be shortened. In addition, since the processing liquid supplied to the main surface of the substrate is the minimum necessary amount that covers the contact portion with the sponge on the main surface of the substrate, the consumption of the processing liquid can be reduced.

Furthermore , when the contact means is controlled by the contact control means, one of the whole-process sponge and the partial-process sponge contacts the substrate. Since the full-surface processing sponge has a first substrate contact surface larger than the main surface of the substrate, the contact control means contacts the entire surface processing sponge and the substrate to process the entire main surface of the substrate. The liquid can be supplied in an instant. On the other hand, since the partial processing sponge has a second substrate contact surface that is smaller than the main surface of the substrate, the contact control means brings the partial processing sponge and the substrate into contact with each other to form a part of the main surface of the substrate. Treatment liquid can be supplied. Therefore, it is possible to suppress or prevent the processing liquid from being supplied to a portion where it is not necessary to supply the processing liquid.

The portion of the main surface of the substrate that contacts the partial processing sponge may be a predetermined portion or a portion set for each substrate.
If part contacting the partially treated sponge in the main surface of the substrate is set for each substrate, as in the invention of claim 2, wherein the substrate processing apparatus, contaminated measuring means for measuring the contamination state of the substrate (8 ), A sponge selecting means (4) for selecting one of the whole-process sponge and the partial-process sponge based on the measurement result of the contamination state measurement means, and the partial-process sponge by the sponge selection means And a contact position setting means (4) for setting, for each substrate, a portion of the main surface of the substrate that is in contact with the partial processing sponge based on the measurement result of the contamination state measuring means, The contact control means controls the contact means so that the part set by the contact position setting means and the partial processing sponge contact each other. So that the, and the partial processing sponge to the main surface of the substrate held by the substrate holding means may be moved relative.

  According to this configuration, the contamination state of the substrate is measured by the contamination state measuring unit. The sponge selection means selects one of the full-process sponge and the partial-process sponge based on the measurement result of the contamination state measurement means. The contact position setting means sets, for each substrate, a portion of the main surface of the substrate that the partial treatment sponge contacts when the sponge selection means selects the partial treatment sponge based on the measurement result of the contamination state measurement means. The contact control means controls the contact means to bring the part set by the contact position setting means into contact with the partial processing sponge. Therefore, the partial processing sponge can be reliably brought into contact with the contaminated portion of the substrate, and the processing liquid can be reliably supplied to this portion. Thereby, the cleanliness of the substrate can be improved.

A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect , further comprising a sponge cleaning means (56) for cleaning the sponge.
Another embodiment of the present invention includes a sponge (41, 49) capable of absorbing a treatment liquid and elastically deforming, a treatment liquid supply means (40, 48) for supplying the treatment liquid to the sponge, and a substrate (W). The substrate holding means (21, 260) for holding the substrate and the sponge and the main surface of the substrate held by the substrate holding means are moved relative to each other so that they are brought into contact with each other, thereby being absorbed by the sponge. Provided is a substrate processing apparatus (1, 201) including contact means (21, 221) for supplying a liquid to the main surface of the substrate. The substrate processing apparatus according to another embodiment of the present invention may further include the sponge cleaning means (56).
According to these configurations, the sponge is cleaned by the sponge cleaning means. This removes foreign matter from the sponge. Therefore, when the sponge and the substrate come into contact with each other, it is possible to suppress or prevent the foreign matter from moving from the sponge to the substrate to contaminate the substrate.

According to a fourth aspect of the present invention, the sponge cleaning means includes a cleaning tank (40, 48) for storing a processing liquid in which the sponge is immersed, and a sponge in which the sponge is immersed in the processing liquid stored in the cleaning tank. a sponge holding means for holding the sponge in it has state (42,50,225), and a compression means for compressing the sponge held in the sponge holding means (21,43), according to claim 3, wherein This is a substrate processing apparatus.

  According to this configuration, the compression unit can compress the sponge held by the sponge holding unit. Accordingly, the sponge is compressed while being immersed in the treatment liquid stored in the cleaning tank. When the compression means subsequently releases the compression of the sponge, the sponge expands to its original shape due to its elasticity. Thereby, the sponge absorbs the treatment liquid by its absorption power. When the sponge is compressed, foreign matter adhering to the surface of the sponge and foreign matter held inside the sponge are discharged from the sponge together with the treatment liquid absorbed by the sponge. This removes foreign matter from the sponge.

  The substrate processing apparatus may repeat compression / expansion of the sponge by repeatedly operating the compression unit. That is, the compression / expansion of the sponge may be repeatedly performed by repeatedly operating the compression unit. In this case, the treatment liquid is repeatedly absorbed and discharged by the sponge, and foreign matters are reliably removed from the sponge. Therefore, when the sponge and the substrate come into contact with each other, it is possible to suppress or prevent the foreign matter from moving from the sponge to the substrate and contaminating the substrate.

According to a fifth aspect of the present invention, the sponge cleaning means includes a circulation pipe (44) for circulating the treatment liquid stored in the washing tank, and a filter (46) for removing foreign substances from the treatment liquid flowing through the circulation pipe. The substrate processing apparatus according to claim 4 , further comprising:
According to this configuration, the processing liquid stored in the cleaning tank is discharged to the circulation pipe and returns to the cleaning tank again through the circulation pipe. Thereby, the processing liquid stored in the cleaning tank circulates. Foreign matter contained in the processing liquid flowing through the circulation pipe is removed by the filter. Therefore, it is possible to suppress or prevent foreign substances contained in the processing liquid stored in the cleaning tank from adhering to the sponge. Thereby, when a sponge and a board | substrate contact, it can suppress or prevent that a foreign material moves from a sponge to a board | substrate and a board | substrate is contaminated.

According to a sixth aspect of the present invention, the sponge and the substrate are moved relative to each other while the sponge and the main surface of the substrate held by the substrate holding means are in contact with each other. further comprising a sliding means for sliding (21 or 221) is a substrate processing apparatus according to any one of claims 1-5.
According to this configuration, the sliding means slides the sponge and the substrate. Thereby, the foreign material adhering to the main surface of the substrate is scraped off by the sponge. Thereby, the cleanliness of the substrate can be improved.

The sliding of the sponge and the substrate may be performed every time the sponge and the substrate come into contact with each other, or may be performed according to the contamination state of the substrate. Specifically, as in the invention described in claim 7 , the substrate processing apparatus controls the contamination state by controlling the contamination state measuring means (8) for measuring the contamination state of the substrate and the sliding means. Sliding control means (4) for controlling sliding between the sponge and the substrate based on the measurement result of the measuring means may be further included.

  According to this configuration, the sliding control unit controls sliding between the sponge and the substrate based on the measurement result of the contamination state measuring unit. That is, for example, when the degree of contamination of the substrate is high, the sliding control means slides the sponge and the substrate by the sliding means. On the other hand, for example, when the degree of contamination of the substrate is low, the sliding control means does not slide the sponge and the substrate. Thus, since the sliding of the sponge and the substrate is controlled according to the contamination state of the substrate, the cleanliness of the substrate can be stabilized.

The invention according to claim 8 is the contamination state measuring means (8) for measuring the contamination state of the substrate, and the pressing amount changing means for changing the pressing amount of the sponge against the main surface of the substrate held by the substrate holding means. (21, 221) and a pressing amount control means (4) for changing the pressing amount based on a measurement result of the contamination state measuring means by controlling the pressing amount changing means. The substrate processing apparatus according to claim 7 .

  According to this configuration, the pressing amount control unit controls the pressing amount of the sponge against the main surface of the substrate based on the measurement result of the contamination state measuring unit. That is, for example, when the degree of contamination of the substrate is high, the pressing amount control unit controls the pressing amount changing unit to increase the pressing amount as compared with the case where the degree of contamination of the substrate is low. As a result, the amount of the processing liquid that oozes from the sponge increases, and the amount of the processing liquid supplied to the substrate increases. Thus, since the supply amount of the processing liquid to the main surface of the substrate is controlled according to the contamination state of the substrate, the cleanliness of the substrate can be stabilized.

The invention according to claim 9 is the substrate processing apparatus according to any one of claims 1 to 8 , further comprising temperature changing means (47a, 47b, 247) for changing the temperature of the substrate.
According to this configuration, the temperature changing unit changes the temperature of the substrate by heating and / or cooling the substrate. As a result, the substrate expands and / or contracts. Further, when the temperature of the substrate changes, the temperature of the foreign matter attached to the substrate also changes, and the foreign matter expands and / or contracts. Accordingly, both the substrate and the foreign material expand and / or contract. When the expansion rate of the substrate and the expansion rate of the foreign matter are different, the contact state between the substrate and the foreign matter changes due to the expansion and / or contraction of the substrate and the foreign matter, and the foreign matter is easily removed from the substrate. Therefore, the foreign matter removal rate can be improved.

According to a tenth aspect of the present invention, the temperature changing means includes heating means (47a) for heating the substrate, cooling means (47b) for cooling the substrate, and heating and cooling of the substrate alternately by the heating means and the cooling means. The substrate processing apparatus according to claim 9 , further comprising: a temperature control means (4) to be executed.
According to this configuration, the temperature control unit controls the heating unit and the cooling unit, whereby the heating and cooling of the substrate are alternately performed. Therefore, when the expansion coefficient of the substrate and the expansion coefficient of the foreign matter are different, the contact state between the substrate and the foreign matter changes, and the foreign matter is easily removed from the substrate. In particular, since the heating and cooling of the substrate are performed alternately, the temperature difference between the substrates becomes larger than when only heating or cooling is performed. Therefore, it becomes easier to remove foreign substances from the substrate. Thereby, the removal rate of a foreign material can be improved.

The invention according to claim 11 is a rinsing liquid supply means (51) for supplying a rinsing liquid to the substrate, a drying means (21) for drying the substrate, and a supply station for supplying the processing liquid from the sponge to the substrate. (13, 15), a rinsing / drying station (12) in which the rinsing liquid is supplied from the rinsing liquid supply means to the substrate and the substrate is dried by the drying means, and the loading / unloading in which the substrate is carried in and out. An unloading station (11) so that the substrate moves from the loading / unloading station to the supply station, and then moves from the supply station through the rinse / drying station to the loading / unloading station. The substrate processing according to any one of claims 1 to 10 , further comprising a transfer means (21) for transferring the substrate. It is a science device.

  According to this structure, a conveyance means conveys a board | substrate. The substrate transported by the transport means moves from the loading / unloading station to the supply station. Thereafter, the substrate moves from the supply station through the rinse / drying station to the loading / unloading station. The substrate conveyed by the conveying means is processed with the processing liquid supplied from the sponge at the supply station. The substrate transported by the transport means is processed by the rinse liquid supplied from the rinse liquid supply means at the rinse / dry station. That is, the processing liquid adhering to the substrate is washed away by the rinse liquid. Thereafter, the rinse liquid adhering to the substrate is removed by the drying means at the rinse / drying station, and the substrate is dried. In this way, a series of processing is performed on the substrate by the transport means transporting the substrate.

Invention of claim 12, wherein the substrate processing apparatus further comprises conveying path which the substrate is conveyed (20), said loading and unloading stations, the rinsing and drying stations, and the supply station, the in this order The substrate processing apparatus according to claim 11 , wherein the substrate processing apparatus is disposed along a transport path, and the transport unit transports the substrate along the transport path.
According to this configuration, the carry-in / carry-out station, the rinse / dry station, and the supply station are arranged in this order along the conveyance path. The transport means transports the substrate along the transport path. Therefore, the substrate transported by the transport means moves from the carry-in / carry-out station to the supply station through the rinse / dry station. Thereafter, the substrate moves from the supply station through the rinse / drying station to the loading / unloading station. That is, the substrate that has been rinsed and dried at the rinse / dry station moves from the rinse / dry station to the carry-in / carry-out station without passing through the supply station. Therefore, it is possible to suppress or prevent the atmosphere of the processing liquid floating in the supply station from adhering to the substrate. Thereby, the cleanliness of the substrate can be improved.

A thirteenth aspect of the present invention is the entire surface processing sponge (41) having a first substrate contact surface (41a, 41b) having a size larger than the main surface of the substrate and capable of absorbing the processing liquid and elastically deforming the substrate, A partial processing sponge (49) having a second substrate contact surface (49a, 49b) smaller than the main surface of the first substrate and capable of absorbing the processing liquid and elastically deforming, and processing liquid on one of the sponges (41 , 49). supplying a process liquid by the supply means (40, 48), comprising the steps of absorbing the treatment liquid to the one of the sponge, which is held on the one sponge and the substrate holding means to absorb the processing liquid (21,260) a main surface of the substrate are relatively moved by the contact means (21 or 221) contacting with, and a step of supplying a processing liquid in which the absorbed in the one of the sponge to the main surface of the substrate, the substrate processing method is there. According to this configuration, it is possible to achieve an effect similar to the effect described with respect to the invention of claim 1.

It is a schematic diagram which shows the layout of the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a schematic diagram which shows schematic structure of the whole surface processing line which concerns on 1st Embodiment of this invention. It is a schematic diagram which shows schematic structure of the whole surface processing line which concerns on 1st Embodiment of this invention. It is a mimetic diagram showing a schematic structure of a substrate transfer robot concerning a 1st embodiment of the present invention. It is a top view which shows schematic structure of the carrying in / out station which concerns on 1st Embodiment of this invention. It is a side view which shows schematic structure of the carrying in / out station which concerns on 1st Embodiment of this invention. It is a schematic diagram which shows schematic structure of the 1st chemical | medical solution supply station which concerns on 1st Embodiment of this invention. It is a schematic diagram which shows schematic structure of the 2nd chemical | medical solution supply station which concerns on 1st Embodiment of this invention. It is a mimetic diagram showing a schematic structure of a rinse and drying station concerning a 1st embodiment of the present invention. It is a schematic diagram which shows schematic structure of the sponge cleaning apparatus which concerns on 1st Embodiment of this invention. It is a schematic diagram which shows the state by which the whole surface processing sponge is compressed in the chemical | medical solution. It is a schematic diagram which shows the state by which the whole surface processing sponge is compressed in the air. It is a flowchart for demonstrating an example of a process of a board | substrate. It is a schematic diagram which shows the layout of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. It is a schematic diagram for demonstrating schematic structure of the whole surface processing line which concerns on 2nd Embodiment of this invention. It is a schematic diagram for demonstrating schematic structure of the partial process line which concerns on 2nd Embodiment of this invention. It is a schematic diagram which shows the state by which the whole surface processing sponge is compressed in the chemical | medical solution. It is a schematic diagram which shows the state by which the whole surface processing sponge is compressed in the air.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic diagram showing a layout of a substrate processing apparatus 1 according to the first embodiment of the present invention.
The substrate processing apparatus 1 is a single-wafer type substrate processing apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one with a processing solution such as a chemical solution or a rinsing solution. The substrate processing apparatus 1 includes an indexer block 2 into which the substrate W is loaded, a processing block 3 that processes the substrate W loaded into the indexer block 2, and a control device that controls apparatuses and devices provided in the substrate processing apparatus 1. 4 (contact control means, sponge selection means, contact position setting means, sliding control means, pressing amount control means, temperature control means).

  The indexer block 2 includes a carrier holding unit 5 that holds a plurality of carriers C, an indexer robot 6 that transports the substrate W, an IR moving mechanism 7 that moves the indexer robot 6, and a measurement unit that measures the contamination state of the substrate W. 8 (contamination state measuring means). The plurality of carriers C are held by the carrier holding unit 5 in a state of being arranged along the horizontal carrier arrangement direction D1. In each carrier C, a plurality of substrates W are held in a horizontal posture with a gap in the vertical direction with the surface of the substrate W, which is a device formation surface, facing upward. The IR moving mechanism 7 moves the indexer robot 6 in the carrier arrangement direction D1. The indexer robot 6 performs a loading operation for loading the substrate W into the carrier C held by the carrier holding unit 5 and a loading operation for unloading the substrate W from the carrier C. Further, the indexer robot 6 transports the substrate W in the indexer block 2 and transports the substrate W between the indexer block 2 and the processing block 203.

  The measurement unit 8 is a unit that measures the number of foreign matters such as particles adhering to the substrate W and the position of each foreign matter with respect to the substrate W. The measurement unit 8 includes, for example, a particle counter, a total reflection X-ray fluorescence analyzer (TRXRF), an energy dispersive X-ray analyzer (EDX: Energy Dispersive X-ray spectrometer), and a scanning electron microscope (SEM: Scanning Electron Microscope). , And at least one of image recognition foreign matter inspection devices. The control device 4 acquires the measurement result of the measurement unit 8 and causes the processing block 3 to process the substrate W based on the measurement result.

  The processing block 3 includes a plurality of (for example, four) processing lines 9 and 10 that process the substrate W one by one. Each processing line 9, 10 extends in a horizontal line extending direction D2 orthogonal to the carrier arrangement direction D1. The four processing lines 9 and 10 include two full-surface processing lines 9 that supply a chemical solution to the entire lower surface of the substrate W and two partial processing lines 10 that supply a chemical solution to a part of the lower surface of the substrate W. The two full-surface processing lines 9 are stacked one above the other, and the two partial processing lines 10 are stacked one above the other. The upper overall processing line 9 and the upper partial processing line 10 are arranged at the same height and face each other in the horizontal direction. Similarly, the lower overall processing line 9 and the lower partial processing line 10 are arranged at the same height and face each other in the horizontal direction.

  The entire surface processing line 9 includes a loading / unloading station 11 where the substrate W is loaded and unloaded, a rinsing / drying station 12 which performs a rinsing process and a drying process, and a first chemical solution that supplies a chemical solution to the entire lower surface of the substrate W. It includes a supply station 13 (supply station) and a sponge cleaning robot standby station 14 on which a sponge cleaning robot 57 described later is waiting. These stations 11, 12, 13, 14 are arranged in the line extending direction D 2 in the order of the loading / unloading station 11, the rinsing / drying station 12, the first chemical solution supply station 13, and the sponge cleaning robot standby station 14 from the indexer block 2 side. It is arranged.

  Similarly, the partial processing line 10 includes a carry-in / carry-out station 11, a rinse / dry station 12, a second chemical liquid supply station 15 (supply station) that supplies a chemical to a part of the lower surface of the substrate W, and a sponge cleaning robot. Standby station 14. That is, the partial processing line 10 has the same configuration as the entire surface processing line 9 except for the first chemical solution supply station 13. These stations 11, 12, 15, 14 are arranged in the line extending direction D 2 in the order of the loading / unloading station 11, the rinsing / drying station 12, the second chemical solution supply station 15, and the sponge cleaning robot standby station 14 from the indexer block 2 side. It is arranged.

  The first chemical liquid supply station 13 supplies the chemical liquid to the entire lower surface of the substrate W, supplies the chemical liquid to the first heating station 16 that heats the substrate W, and supplies the chemical liquid to the entire lower surface of the substrate W, and cools the substrate W. The first cooling station 17. The first heating station 16 and the first cooling station 17 are arranged in the line extending direction D2. The first heating station 16 is disposed closer to the rinsing / drying station 12 than the first cooling station 17. The order of the first heating station 16 and the first cooling station 17 may be reversed. That is, the first cooling station 17 may be disposed closer to the rinsing / drying station 12 than the first heating station 16.

  Similarly, the second chemical liquid supply station 15 supplies the chemical liquid to a part of the lower surface of the substrate W, supplies the chemical liquid to the second heating station 18 that heats the substrate W, and a part of the lower surface of the substrate W. And a second cooling station 19 for cooling the substrate W. The second heating station 18 and the second cooling station 19 are arranged in the line extending direction D2. The second heating station 18 is disposed closer to the rinsing / drying station 12 than the second cooling station 19. The order of the second heating station 18 and the second cooling station 19 may be reversed. That is, the second cooling station 19 may be disposed closer to the rinsing / drying station 12 than the second heating station 18.

  The control device 4 causes the indexer robot 6 to load the unprocessed substrate W into the loading / unloading stations 11 of the processing lines 9 and 10. Then, the substrate W carried into the carry-in / out station 11 is carried and processed in the same processing lines 9 and 10. Thereafter, the control device 4 causes the indexer robot 6 to unload the substrates W processed in the processing lines 9 and 10 from the loading / unloading station 11.

2 and 3 are schematic views showing a schematic configuration of the entire surface processing line 9 according to the first embodiment of the present invention. FIG. 4 is a schematic diagram showing a schematic configuration of the substrate transfer robot 21 according to the first embodiment of the present invention. Below, the structure of the whole surface processing line 9 is demonstrated. Since the partial processing line 10 has the same configuration as the entire surface processing line 9, the description thereof is omitted.
As shown in FIG. 2, the entire surface processing line 9 includes a transport path 20 that transports the substrate W, and a substrate transport robot 21 that transports the substrate W along the transport path 20 (substrate holding means, contact means, compression means, Sliding means, pressing amount changing means, drying means, transport means) and a sealed processing case 22 for accommodating the substrate transport robot 21. The conveyance path 20 extends in the line extending direction D2. The carry-in / carry-out station 11, the rinse / dry station 12, the first chemical solution supply station 13, and the sponge cleaning robot standby station 14 are arranged along the conveyance path 20. The loading / unloading station 11 is provided outside the processing case 22, and the rinsing / drying station 12, the first chemical solution supply station 13, and the sponge cleaning robot standby station 14 are provided in the processing case 22. The processing case 22 includes a box-shaped main body 23 having an opening 23a, a shutter 24 for opening and closing the opening 23a, and a shutter 24 between an open position where the opening 23a is opened and a closed position where the opening 23a is closed. And a shutter moving mechanism (not shown) for moving.

  As shown in FIGS. 2 and 3, the substrate transport robot 21 includes a substrate holding unit 25 that holds the substrate W, a vertical expansion / contraction unit 26 that can expand and contract in the vertical direction, and a horizontal expansion / contraction unit that can expand and contract in the line extending direction D2. 27 and a horizontal movement unit 28 for moving the vertical expansion / contraction part 26 in the line extending direction D2. The substrate holding part 25 is supported by the vertical elastic part 26 below the vertical elastic part 26, and the vertical elastic part 26 is supported by the horizontal elastic part 27 below the horizontal elastic part 27. The horizontal telescopic part 27 is supported by the horizontal moving part 28 below the horizontal moving part 28. The horizontal moving part 28 extends in the line extending direction D <b> 2 within the processing case 22. The horizontal movement unit 28 integrally moves the substrate holding unit 25, the vertical expansion / contraction unit 26, and the horizontal expansion / contraction unit 27 within the processing case 22.

  Further, as shown in FIG. 4, the substrate transport robot 21 includes a suction mechanism 29 that generates a suction force, an elevating mechanism 30 that expands and contracts the vertical extendable part 26 in the vertical direction, and a substrate held by the substrate holding part 25. And a rotation mechanism 31 that rotates the substrate holding part 25 around the substrate rotation axis L1 extending in the vertical direction through the center of W. The suction force of the suction mechanism 29 is transmitted to the substrate holder 25. The substrate holding unit 25 holds the substrate W horizontally below the substrate holding unit 25 by sucking the upper surface (back surface) of the substrate W by the suction force from the suction mechanism 29. When the elevating mechanism 30 expands and contracts the vertical extendable part 26 while the substrate holding unit 25 holds the substrate W, the substrate W moves up and down in a horizontal posture. Further, when the rotation mechanism 31 rotates the substrate holding unit 25 while the substrate holding unit 25 holds the substrate W, the substrate W rotates about the substrate rotation axis L1.

  The substrate W held by the substrate holding unit 25 is transported in the line extending direction D2 within the processing case 22 by the horizontal moving unit 28 moving the substrate holding unit 25, the vertical expansion / contraction unit 26, and the horizontal expansion / contraction unit 27. Is done. That is, the substrate W held by the substrate holding unit 25 is transported between the rinse / dry station 12 and the chemical solution supply stations 13 and 15. Further, the substrate W held by the substrate holding unit 25 is transported between the inside of the processing case 22 and the outside of the processing case 22 by the expansion and contraction of the horizontal expansion and contraction unit 27.

  Specifically, as shown in FIG. 2, the loading / unloading station 11 includes a substrate support member 32 that supports the substrate W. The substrate support member 32 supports the substrate W below the transport path 20. The indexer robot 6 carries the substrate W into the substrate support member 32 and unloads the substrate W from the substrate support member 32. As shown in FIG. 3, when the substrate W is transported from outside the processing case 22, the substrate holding part 25, the vertical extension / contraction part 26, and the horizontal extension / contraction part 27 are formed in the opening 23 a in the processing case 22. The horizontal expansion / contraction part 27 is arrange | positioned in the vicinity and the horizontal expansion-contraction part 27 expand | extends in the line extending | stretching direction D2 in the state in which the opening part 23a is opened. Thereby, the board | substrate holding | maintenance part 25 and the vertical expansion-contraction part 26 move out of the processing case 22 through the opening part 23a. Then, the substrate holding part 25 and the vertical extension / contraction part 26 are disposed outside the processing case 22 so that the substrate holding part 25 is positioned above the substrate W supported by the substrate support member 32. In this state, the vertical extension / contraction part 26 extends to a position where the substrate holding part 25 contacts the upper surface of the substrate W. Accordingly, the substrate W supported by the substrate support member 32 is held by the substrate holding unit 25. After the substrate W is held by the substrate holding unit 25, the substrate W is raised to a height corresponding to the transport path 20 by the vertical expansion / contraction part 26 contracting. Thereafter, the horizontal contraction portion contracts, whereby the substrate W held by the substrate holding portion 25 is transferred into the processing case 22 through the opening 23a. Then, the opening is sealed by the shutter 24. In this way, the substrate W is transferred from the outside to the inside of the processing case 22.

  On the other hand, when the substrate W is transferred out of the processing case 22, the same operation as the above-described series of operations is performed. That is, the substrate holder 25, the vertical extension / contraction part 26, and the horizontal extension / contraction part 27 are disposed in the processing case 22 in the vicinity of the opening 23a, and the horizontal extension / contraction part 27 is in the state where the opening 23a is opened. It extends in the line stretching direction D2. As a result, the substrate W held by the substrate holder 25 is transported out of the processing case 22 through the opening 23a. Then, the substrate holding part 25 and the vertical extendable part 26 are arranged outside the processing case 22 so that the substrate W held by the substrate holding part 25 is positioned above the substrate support member 32. In this state, the vertical extendable portion 26 extends to a position where the peripheral edge portion of the lower surface (front surface) of the substrate W held by the substrate holding portion 25 is in contact with the substrate support member 32. As a result, the substrate W held by the substrate holding unit 25 is supported by the substrate support member 32. Thereafter, the vertical extension / contraction part 26 and the horizontal extension / contraction part 27 contract in order, whereby the substrate holding part 25 and the vertical extension / contraction part 26 are retracted into the processing case 22. The opening 23 a is sealed by the shutter 24. In this way, the substrate W is transported out of the processing case 22.

FIG. 5 is a plan view showing a schematic configuration of the loading / unloading station 11 according to the first embodiment of the present invention. FIG. 6 is a side view showing a schematic configuration of the loading / unloading station 11 according to the first embodiment of the present invention.
The carry-in / carry-out station 11 includes a substrate support member 32 that supports the substrate W, and a reversing mechanism 33 that reverses the front and back of the substrate W. The reversing mechanism 33 includes a pair of clamping members 34, an opening / closing mechanism 35, an elevating mechanism 36, and a rotating mechanism 37. The pair of clamping members 34 are opposed to each other in the horizontal direction. The clamping member 34 includes a pair of clamping parts 38. A pair of clamping parts 38 provided in one clamping member 34 has a groove 39 opened on the other clamping member 34 side. The pair of sandwiching portions 38 are arranged at intervals in a horizontal direction orthogonal to the direction in which the pair of sandwiching members 34 face each other. The clamping member 34 is movable in the horizontal direction and the vertical direction, and is rotatable around a horizontal inversion axis L2 extending in a direction in which the pair of clamping members 34 face each other.

  The opening / closing mechanism 35 moves the pair of clamping members 34 in the horizontal direction between the open position and a closed position where the distance between the pair of clamping members 34 is smaller than when the opening / closing mechanism 35 is located at the open position. The elevating mechanism 36 has a transfer height at which the substrate W is transferred between the substrate support member 32 and the pair of sandwiching members 34, and an inversion height at which the substrate W held by the pair of sandwiching members 34 is reversed ( The pair of clamping members 34 are moved in the vertical direction while being synchronized with the position shown in FIG. The rotation mechanism 37 rotates the pair of clamping members 34 about the reverse axis L2 by 180 degrees while synchronizing the pair of clamping members 34.

  When the front and back sides of the substrate W are reversed, the substrate support member 32 supports the substrate W, and the pair of clamping members 34 are disposed at the delivery height, so that the opening / closing mechanism 35 has a pair of clamping The member 34 is moved from the open position to the closed position. Accordingly, the peripheral edge portion of the substrate W enters the groove 39 of each sandwiching portion 38, and the substrate W is sandwiched by the pair of sandwiching members 34. Then, in a state where the substrate W is held by the pair of sandwiching members 34, the lifting mechanism 36 moves the pair of sandwiching members 34 from the delivery height to the reverse height. Thereafter, the rotation mechanism 37 rotates the pair of clamping members 34 about the reverse axis L2 by 180 degrees. Thereby, the front and back of the substrate W are reversed.

  After the front and back of the substrate W are reversed, the lifting mechanism 36 is moved to a height (delivery height) at which the peripheral edge of the lower surface of the substrate W held by the pair of clamping members 34 is in contact with the substrate support member 32. The clamping member 34 is lowered. Thereafter, the opening / closing mechanism 35 moves the pair of clamping members 34 from the closed position to the open position. Thereby, each clamping part 38 leaves | separates from the board | substrate W, and holding | maintenance of the board | substrate W by a pair of clamping member 34 is cancelled | released. That is, the substrate W is transferred from the pair of clamping members 34 to the substrate support member 32, and the substrate W is supported only by the substrate support member 32. Thereafter, the elevating mechanism 36 raises the pair of clamping members 34 and retracts them from the substrate support member 32.

FIG. 7 is a schematic diagram showing a schematic configuration of the first chemical liquid supply station 13 according to the first embodiment of the present invention. FIG. 8 is a schematic diagram showing a schematic configuration of the second chemical liquid supply station 15 according to the first embodiment of the present invention.
As shown in FIG. 7, the first heating station 16 of the first chemical solution supply station 13 is stored in the first storage tank 40 (treatment liquid supply means, cleaning tank) that stores the chemical liquid, and the first storage tank 40. Full-surface processing sponge 41 (sponge) immersed in the chemical solution, a first holding member 42 (sponge holding means) that holds the full-surface processing sponge 41, and an elevating mechanism that raises and lowers the first holding member 42 in the vertical direction. 43, a circulation pipe 44 for circulating the chemical stored in the first storage tank 40, a pump 45 and a filter 46 interposed in the circulation pipe 44, and a heater 47a (temperature) for heating the chemical flowing through the circulation pipe 44 Change means, heating means). In addition, the first cooling station 17 of the first chemical solution supply station 13 includes a first storage tank 40, a whole surface processing sponge 41, a first holding member 42, an elevating mechanism 43, a circulation pipe 44, a pump 45, A filter 46 and a cooler 47b (temperature changing means, cooling means) for cooling the chemical flowing through the circulation pipe 44 are included. That is, the 1st cooling station 17 is provided with the cooler 47b instead of the heater 47a, and is provided with the structure similar to the 1st heating station 16 except the heater 47a.

  Further, as shown in FIG. 8, the second heating station 18 of the second chemical liquid supply station 15 includes a second storage tank 48 (processing liquid supply means, cleaning tank), a partial processing sponge 49 (sponge), and a second A holding member 50 (sponge holding means), an elevating mechanism 43, a circulation pipe 44, a pump 45, a filter 46, and a heater 47a are included. The second cooling station 19 of the second chemical solution supply station 15 includes a second storage tank 48, a partial treatment sponge 49, a second holding member 50, an elevating mechanism 43, a circulation pipe 44, a pump 45, A filter 46 and a cooler 47b are included. That is, the second cooling station 19 includes a cooler 47b instead of the heater 47a, and has the same configuration as the second heating station 18 except for the heater 47a. The difference between the first storage tank 40 provided in the first chemical solution supply station 13 and the second storage tank 48 provided in the second chemical solution supply station 15 is the size. Is larger than the first storage tank 40. Similarly, the difference between the first holding member 42 and the second holding member 50 is the size, and the second holding member 50 is larger than the first holding member 42. Further, the difference between the full-process sponge 41 and the partial process sponge 49 is the size, and the partial process sponge 49 is smaller than the full-process sponge 41.

Since the second chemical liquid supply station 15 has the same configuration as the first chemical liquid supply station 13 as described above, the first chemical liquid supply station 13 will be mainly described below. The second chemical liquid supply station 15 will be described only with respect to differences from the first chemical liquid supply station 13.
As shown in FIG. 7, the first storage tank 40 has an opening that is larger than the substrate W and opens upward. The first holding member 42 is disposed in the chemical solution. As can be seen by comparing FIG. 7 and FIG. 8, the opening of the second storage tank 48 is larger than the opening of the first storage tank 40. Moreover, the 2nd holding member 50 has a magnitude | size corresponding to the opening part of the 2nd storage tank 48, and is arrange | positioned in a chemical | medical solution. As shown in FIG. 7, the first holding member 42 is a net-like member configured to allow fluid to move up and down through the first holding member 42. The first holding member 42 is disposed below the liquid surface of the chemical solution. The first holding member 42 is movable in the vertical direction with respect to the first storage tank 40. As will be described later, when the whole surface processing sponge 41 is cleaned, the lifting mechanism 43 moves the first holding member 42 up and down.

  As shown in FIG. 7, the entire processing sponge 41 is supported from below by a first holding member 42 at a processing position where a part of the processing sponge 41 is immersed in a chemical solution. At the processing position, the upper surface 41a (first substrate contact surface) of the entire surface processing sponge 41 is disposed above the liquid surface of the chemical solution, and the lower surface 41b of the entire surface processing sponge 41 is disposed in the chemical solution. The entire surface processing sponge 41 is formed of a porous material that can absorb liquid and elastically deform. The porous material includes, for example, at least one of PVA (polyvinyl alcohol), PP (polypropylene), and PE (polyethylene). The upper surface 41a and the lower surface 41b of the whole surface processing sponge 41 are, for example, circular horizontal surfaces having a diameter equal to or larger than the diameter of the substrate W. In the first embodiment, the upper surface 41a of the whole surface processing sponge 41 functions as a first substrate contact surface. That is, when the vertical expansion / contraction part 26 extends in a state where the substrate W is positioned above the entire surface processing sponge 41, the entire area of the lower surface of the substrate W held by the substrate transport robot 21 becomes the upper surface of the entire surface processing sponge 41. It is pressed against 41a. As a result, the chemical solution absorbed by the entire surface processing sponge 41 oozes out, and the chemical solution is supplied to the entire lower surface of the substrate W.

  Further, as shown in FIG. 8, the partial processing sponge 49 is supported from below by the second holding member 50 at a processing position where a part thereof is immersed in the chemical solution. In the processing position, the upper surface 49a (second substrate contact surface) of the partial processing sponge 49 is disposed above the liquid surface of the chemical liquid, and the lower surface 49b of the partial processing sponge 49 is disposed in the chemical liquid. The partial treatment sponge 49 is formed of a porous material that can absorb liquid and elastically deform. The upper surface 49a and the lower surface 49b of the partial processing sponge 49 are horizontal surfaces that are smaller than the upper surface and the lower surface of the substrate W, for example. In the first embodiment, the upper surface 49a of the partial processing sponge 49 functions as a second substrate contact surface. That is, when the vertical expansion / contraction part 26 extends in a state where the substrate W is positioned above the partial processing sponge 49, a part of the lower surface of the substrate W held by the substrate transport robot 21 is moved to the partial processing sponge 49. Pressed against the upper surface 49a. As a result, the chemical solution absorbed by the partial processing sponge 49 oozes out and is supplied to a part of the lower surface of the substrate W. The control device 4 controls the horizontal moving unit 28 and the rotation mechanism 31 (see FIGS. 3 and 4) to change the position of the substrate W in the line extending direction D2 and the rotation angle of the substrate W around the substrate rotation axis L1. By doing so, the arbitrary part in the lower surface of the board | substrate W and the partial process sponge 49 are made to contact.

  As shown in FIG. 7, the circulation pipe 44 includes an upstream end 44 a and a downstream end 44 b that are connected to the first storage tank 40 below the first holding member 42. The chemical stored in the first storage tank 40 flows into the circulation pipe 44 from the upstream end 44 a by the suction force of the pump 45. And the chemical | medical solution which flowed in in the circulation piping 44 returns to the 1st storage tank 40 from the downstream end 44b, after passing the filter 46. FIG. Thus, the chemical solution stored in the first storage tank 40 circulates. When the chemical solution passes through the filter 46, foreign matters such as particles contained in the chemical solution are removed. In the first heating station 16, the heater 47 a is attached to the circulation pipe 44, and in the first cooling station 17, the cooler 47 b is attached to the circulation pipe 44. Therefore, when the chemical solution flows through the circulation pipe 44, the chemical solution is heated or cooled. The temperature of the heater 47a and the cooler 47b is controlled by the control device 4.

  By heating the chemical liquid flowing through the circulation pipe 44, the temperature of the chemical liquid stored in the first storage tank 40 increases. Accordingly, the temperature of the whole surface processing sponge 41 itself and the chemical solution absorbed by the whole surface processing sponge 41 also rises. Therefore, the substrate W is heated by pressing the substrate W against the entire processing sponge 41 at the first heating station 16. On the other hand, the temperature of the chemical solution stored in the first storage tank 40 is lowered by cooling the chemical solution flowing through the circulation pipe 44. Accordingly, the temperature of the whole surface processing sponge 41 itself and the chemical solution absorbed in the whole surface processing sponge 41 also decreases. Therefore, the substrate W is cooled by being pressed against the entire processing sponge 41 at the first cooling station 17. In this way, the substrate W is pressed against the entire surface processing sponge 41, whereby the substrate W is heated or cooled, and the temperature of the substrate W changes.

FIG. 9 is a schematic diagram showing a schematic configuration of the rinsing / drying station 12 according to the first embodiment of the present invention.
The rinsing / drying station 12 includes a rinsing liquid nozzle 51 (rinsing liquid supply means) that discharges pure water (deionized water) as an example of a rinsing liquid toward the lower surface of the substrate W held by the substrate transfer robot 21. The rinse liquid pipe 52 for supplying pure water to the rinse liquid nozzle 51, the rinse liquid valve 53 interposed in the rinse liquid pipe 52, the nozzle moving mechanism 54 for moving the rinse liquid nozzle 51 in the horizontal direction, and the substrate W A cup 55 for receiving the liquid discharged from the cup 55, and a discharge pipe (not shown) for discharging the liquid accumulated in the cup 55 to the outside of the cup 55. The cup 55 has a bottomed cylindrical shape. The cup 55 has an opening that is larger than the substrate W and opens upward. The rinse liquid nozzle 51 and the nozzle moving mechanism 54 are disposed in the cup 55. The substrate W held by the substrate transport robot 21 is transported into the cup 55 when the vertical telescopic unit 26 extends while the substrate W is positioned above the cup 55. Further, when the substrate W is positioned in the cup 55, the vertical stretchable portion 26 contracts, so that the substrate W is transported out of the cup 55.

  When pure water is supplied to the substrate W, the control device 4 controls the rotation mechanism 31 (see FIG. 4) while the substrate W is positioned in the cup 55, so that the substrate W is rotated around the substrate rotation axis L1. The substrate W is rotated. Then, the control device 4 opens the rinse liquid valve 53 to discharge pure water from the rinse liquid nozzle 51 toward the lower surface of the substrate W while rotating the substrate W. Further, in this state, the control device 4 moves the rinse liquid nozzle 51 in the horizontal direction by controlling the nozzle moving mechanism 54. Thereby, the supply position of the pure water with respect to the substrate W moves between the lower surface central portion of the substrate W and the lower surface peripheral portion of the substrate W. Therefore, the lower surface of the substrate W is scanned with pure water, and pure water is supplied to the entire lower surface of the substrate W.

  After the pure water is supplied to the substrate W, the control device 4 dries the substrate W. Specifically, the control device 4 stops the movement of the rinsing liquid nozzle 51 by controlling the nozzle moving mechanism 54. Further, the control device 4 closes the rinse liquid valve 53 to stop the discharge of pure water from the rinse liquid nozzle 51. Then, with the substrate W positioned in the cup 55, the control device 4 controls the rotation mechanism 31 to move the substrate W around the substrate rotation axis L1 at a high rotation speed (for example, several thousand rpm). Rotate. Thereby, a large centrifugal force is applied to the pure water adhering to the substrate W, and the pure water adhering to the substrate W is shaken off around the substrate W. In this way, pure water is removed from the substrate W, and the substrate W is dried. The pure water scattered around the substrate W and the pure water dropped from the substrate W are received by the cup 55 and discharged to the outside of the cup 55 through the discharge pipe.

FIG. 10 is a schematic diagram showing a schematic configuration of the sponge cleaning apparatus 56 according to the first embodiment of the present invention. FIG. 11 is a schematic diagram showing a state where the entire surface processing sponge 41 is compressed in the chemical solution. FIG. 12 is a schematic diagram showing a state where the whole surface processing sponge 41 is compressed in the air.
As shown in FIG. 10, the entire surface processing line 9 further includes a sponge cleaning device 56 (sponge cleaning means) that cleans the entire surface processing sponge 41. The sponge cleaning device 56 includes a first storage tank 40 as a cleaning tank, a first holding member 42, an elevating mechanism 43, a circulation pipe 44, a filter 46, and a sponge cleaning robot 57 that compresses the entire surface processing sponge 41. including. The elevating mechanism 43 includes a cleaning position (a position indicated by a one-dot chain line) provided below the processing position (a position indicated by a solid line) and a throttle position (a position indicated by a two-dot chain line) provided above the processing position. The first holding member 42 is moved between them. The cleaning position is a position where the entire surface processing sponge 41 is immersed in the chemical solution, and the squeezing position is a position where the entire surface processing sponge 41 is not immersed in the chemical solution. Although not shown, the partial processing line 10 is also provided with a sponge cleaning device 56 for cleaning the partial processing sponge 49, as with the entire surface processing line 9. Since the configuration of the sponge cleaning device 56 provided in the partial processing line 10 is the same as the configuration of the sponge cleaning device 56 provided in the entire surface processing line 9, hereinafter, the sponge cleaning device provided in the entire surface processing line 9 is used. The configuration of 56 will be described.

  As shown in FIG. 10, the sponge cleaning robot 57 has the same configuration as the substrate transfer robot 21. That is, the sponge cleaning robot 57 includes a plate 58, a plate holding unit 59, a vertical extension / contraction unit 26, and a horizontal movement unit 28. Further, although not shown, the sponge cleaning robot 57 includes an elevating mechanism 30 and a rotating mechanism 31 (see FIG. 4). The plate 58 is horizontally held by the plate holder 59 below the plate holder 59. The plate holding portion 59 is held by the vertical extendable portion 26 below the vertical extendable portion 26. The vertical telescopic part 26 is supported by the horizontal moving part 28 below the horizontal moving part 28. The horizontal moving unit 28 moves the sponge cleaning robot 57 in the line extending direction D2 between the first chemical solution supply station 13 and the sponge cleaning robot standby station 14. As a result, the sponge cleaning robot 57 is disposed above the entire surface processing sponge 41.

  When the entire surface processing sponge 41 is cleaned, the control device 4 moves the first holding member 42 to the cleaning position by the lifting mechanism 43. The control device 4 extends the vertical expansion / contraction part 26 of the sponge cleaning robot 57 in a state where the sponge cleaning robot 57 is positioned above the entire surface processing sponge 41 and the entire surface processing sponge 41 is immersed in the chemical solution. Then, the plate 58 of the sponge cleaning robot 57 is lowered in a horizontal posture. As a result, as shown in FIG. 11, the entire surface processing sponge 41 is sandwiched between the plate 58 and the first holding member 42 and the entire surface processing sponge 41 is compressed in the chemical solution. Therefore, the foreign matter held inside the entire surface processing sponge 41 is pushed out from the entire surface processing sponge 41 together with the chemical solution. And this foreign material is caught by the filter 46 by flowing through the circulation piping 44 with a chemical | medical solution. After the whole surface processing sponge 41 is compressed, the control device 4 contracts the vertical expansion / contraction part 26 of the sponge cleaning robot 57 and raises the plate 58 of the sponge cleaning robot 57 in a horizontal posture. As a result, the plate 58 is separated from the entire surface processing sponge 41, and the entire surface processing sponge 41 is restored to its original shape. Therefore, the whole surface processing sponge 41 absorbs the chemical solution.

  Next, the control device 4 moves the first holding member 42 to the throttle position by the lifting mechanism 43. Thereby, the whole surface processing sponge 41 moves above the liquid level of the chemical solution, and leaves the chemical solution stored in the first storage tank 40. Then, the control device 4 extends the vertical expansion / contraction part 26 of the sponge cleaning robot 57 and lowers the plate 58 of the sponge cleaning robot 57 in a horizontal posture in a state where the entire surface processing sponge 41 is not immersed in the chemical solution. . As a result, as shown in FIG. 12, the whole surface processing sponge 41 is sandwiched between the plate 58 and the first holding member 42 and the whole surface processing sponge 41 is compressed in the air. That is, the whole surface processing sponge 41 is squeezed, and the foreign matter held inside the whole surface processing sponge 41 is pushed out from the whole surface processing sponge 41 together with the chemical solution. And the foreign material and the chemical | medical solution which were extruded from the whole surface processing sponge 41 fall in the 1st storage tank 40, and flow through the circulation piping 44. FIG.

  The control device 4 cleans the entire surface processing sponge 41 by causing the sponge cleaning robot 57 and the like to repeatedly execute such an operation. That is, the control device 4 compresses and restores the whole surface processing sponge 41 in the chemical solution, and compresses and restores the whole surface processing sponge 41 in the air. As described above, the compression and restoration of the whole surface processing sponge 41 in the chemical solution and the compression and restoration of the whole surface processing sponge 41 in the air are repeatedly performed, so that the whole surface processing sponge 41 is held inside. Foreign matter is reliably removed, and the cleanliness of the whole surface processing sponge 41 is increased. Therefore, it is possible to suppress or prevent contamination of the substrate W due to foreign matters moving from the entire surface processing sponge 41 to the substrate W when the substrate W and the entire surface processing sponge 41 come into contact with each other.

FIG. 13 is a flowchart for explaining an example of processing of the substrate W according to the first embodiment of the present invention.
When the substrate W is processed by the substrate processing apparatus 1, the control device 4 carries out one substrate W from the carrier C by the indexer robot 6 (S1). Then, the control device 4 transports the substrate W to the measurement unit 8 by the indexer robot 6. Thereby, the substrate W is carried into the measurement unit 8 in a horizontal posture with the surface facing upward, and the contamination state of the surface of the substrate W is measured by the measurement unit 8 (S2). The control device 4 acquires the measurement result of the measurement unit 8, and selects either one of the whole process sponge 41 and the partial process sponge 49 based on the measurement result (S3). That is, for example, when the contaminated part is wide, the control device 4 selects the entire processing line 9 and causes the indexer robot 6 to carry the substrate W from the measuring unit 8 into the entire processing line 9. On the other hand, when the contaminated portion is narrow, the control device 4 selects the partial processing line 10 and causes the indexer robot 6 to transfer the substrate W from the measurement unit 8 to the partial processing line 10.

  When the control device 4 selects the entire surface processing line 9, the control device 4 causes the indexer robot 6 to load the substrate W into the loading / unloading station 11 of the entire surface processing line 9. That is, the substrate W is placed on the substrate support member 32 in a horizontal posture with the surface facing upward. After the substrate W is loaded into the loading / unloading station 11, the control device 4 reverses the front and back of the substrate W using the reversing mechanism 33. Accordingly, the substrate W is placed on the substrate support member 32 in a horizontal posture with the back surface facing upward. Thereafter, the control device 4 holds the substrate W supported by the substrate support member 32 by the substrate transport robot 21 and moves the substrate W from the loading / unloading station 11 to the first chemical solution supply station 13 by the substrate transport robot 21. . Then, the control device 4 causes the lower surface (front surface) of the substrate W held by the substrate transport robot 21 to be pressed against the entire processing sponge 41.

  Specifically, the control device 4 moves the substrate W to the first heating station 16 by the substrate transport robot 21. Then, the control device 4 causes the substrate transport robot 21 to press the lower surface of the substrate W against the entire processing sponge 41 of the first heating station 16. Thereby, the chemical solution is supplied to the entire area of the lower surface of the substrate W, and the substrate W is heated. After the lower surface of the substrate W is pressed against the entire processing sponge 41 of the first heating station 16, the control device 4 moves the substrate W to the first cooling station 17 by the substrate transfer robot 21. Then, the control device 4 causes the substrate transfer robot 21 to press the lower surface of the substrate W against the entire processing sponge 41 of the first cooling station 17. Thereby, the chemical solution is supplied to the entire lower surface of the substrate W and the substrate W is cooled.

The control device 4 causes the substrate transport robot 21 to repeatedly execute such an operation at the first chemical solution supply station 13. Thereby, the chemical solution is supplied to the entire area of the lower surface of the substrate W, and the heating and cooling of the substrate W are alternately executed a plurality of times (S4).
In both the first heating station 16 and the first cooling station 17, the control device 4 causes the entire surface processing sponge 41 and the substrate W to be relative to each other while the entire surface processing sponge 41 and the lower surface of the substrate W are in contact with each other. The whole substrate processing sponge 41 and the substrate W may be slid according to the contamination state of the substrate W by controlling the substrate transport robot 21 so as to move.

  Specifically, the control device 4 reciprocates the substrate transport robot 21 in the line extending direction D2 while the entire surface processing sponge 41 and the substrate W are in contact with each other, thereby moving the entire surface processing sponge 41 and the substrate W. You may make it slide. Further, the control device 4 may cause the whole surface processing sponge 41 and the substrate W to slide by rotating the substrate W by the substrate transport robot 21 in a state where the whole surface processing sponge 41 and the substrate W are in contact with each other. Good.

  In both the first heating station 16 and the first cooling station 17, the control device 4 changes the pressing amount of the entire processing sponge 41 against the lower surface of the substrate W based on the measurement result of the measurement unit 8. Also good. That is, when the pressing amount of the whole surface processing sponge 41 against the lower surface of the substrate W increases, the amount of the chemical liquid that exudes from the whole surface processing sponge 41 also increases. Therefore, for example, when the contamination level of the substrate W is high, the control device 4 controls the substrate transport robot 21 so that the pressing amount is increased as compared with the case where the contamination level of the substrate W is low. The supply amount may be increased.

  After the chemical solution is supplied to the substrate W at the first chemical solution supply station 13, the control device 4 moves the substrate W from the first chemical solution supply station 13 to the rinse / dry station 12 by the substrate transport robot 21. And the control apparatus 4 wash | cleans the chemical | medical solution adhering to the lower surface of the board | substrate W by supplying a pure water to the whole lower surface of the board | substrate W (S5). Thereafter, the control device 4 causes the substrate transport robot 21 to rotate the substrate W at a high rotational speed, thereby removing pure water adhering to the substrate W. Thereby, the substrate W is dried (S6). After the substrate W is dried, the control device 4 moves the substrate W from the rinse / dry station 12 to the carry-in / carry-out station 11 by the substrate transport robot 21. Thereafter, the control device 4 reverses the front and back of the substrate W by the reversing mechanism 33. As a result, the substrate W is placed on the substrate support member 32 in a horizontal posture with the surface facing upward. Then, the control device 4 causes the indexer robot 6 to carry out the substrate W placed on the substrate support member 32.

  On the other hand, when the control device 4 selects the partial processing line 10, the control device 4 causes the indexer robot 6 to carry the substrate W into the loading / unloading station 11 of the partial processing line 10. That is, the substrate W is placed on the substrate support member 32 in a horizontal posture with the surface facing upward. After the substrate W is loaded into the loading / unloading station 11, the control device 4 reverses the front and back of the substrate W using the reversing mechanism 33. Accordingly, the substrate W is placed on the substrate support member 32 in a horizontal posture with the back surface facing upward. Thereafter, the control device 4 holds the substrate W supported on the substrate support member 32 by the substrate transport robot 21 and moves the substrate W from the loading / unloading station 11 to the second chemical solution supply station 15 by the substrate transport robot 21. . Then, the control device 4 causes the lower surface (front surface) of the substrate W held by the substrate transport robot 21 to be pressed against the partial processing sponge 49.

  Specifically, the control device 4 moves the substrate W to the second heating station 18 by the substrate transport robot 21. The control device 4 causes the substrate transport robot 21 to press the lower surface of the substrate W against the partial processing sponge 49 of the second heating station 18. Thereby, the chemical solution is supplied to a part of the lower surface of the substrate W, and the substrate W is heated. After the lower surface of the substrate W is pressed against the partial processing sponge 49 of the second heating station 18, the control device 4 moves the substrate W to the second cooling station 19 by the substrate transport robot 21. Then, the control device 4 causes the substrate transfer robot 21 to press the lower surface of the substrate W against the partial processing sponge 49 of the second cooling station 19. Thereby, the chemical solution is supplied to a part of the lower surface of the substrate W, and the substrate W is cooled. The control device 4 causes the substrate transport robot 21 to repeatedly execute such an operation.

  In both the second heating station 18 and the second cooling station 19, the control device 4 performs the measurement of the measurement unit 8 so that the contaminated portion of the lower surface of the substrate W and the partial processing sponge 49 come into contact with each other. Based on the result, the position of the substrate W in the line stretching direction D2 and the rotation angle of the substrate W around the substrate rotation axis L1 are controlled. In other words, the control device 4 sets the part of the lower surface of the substrate W where the partial processing sponge 49 comes into contact for each substrate W based on the measurement result of the measurement unit 8. Then, the control device 4 controls the substrate transport robot 21 so that the set portion and the partial processing sponge 49 come into contact with each other. Thereby, a chemical | medical solution is supplied to the part set by the control apparatus 4. FIG. That is, the chemical solution is reliably supplied to the contaminated portion on the lower surface of the substrate W.

The control device 4 causes the substrate transport robot 21 to repeatedly execute such an operation at the second chemical solution supply station 15. Thereby, the chemical solution is supplied to a part of the lower surface of the substrate W, and the heating and cooling of the substrate W are alternately executed a plurality of times (S4).
In both the second heating station 18 and the second cooling station 19, the control device 4 reciprocates the substrate transport robot 21 in the line extending direction D2 while the partial processing sponge 49 and the substrate W are in contact with each other. By doing so, the partial processing sponge 49 and the substrate W may be slid. Further, the control device 4 may cause the partial processing sponge 49 and the substrate W to slide by rotating the substrate W by the substrate transport robot 21 in a state where the partial processing sponge 49 and the substrate W are in contact with each other. Good. Further, the control device 4 may control the pressing amount of the partial processing sponge 49 against the lower surface of the substrate W according to the contamination state of the substrate W.

  After the chemical solution is supplied to the substrate W at the second chemical solution supply station 15, the control device 4 moves the substrate W from the first chemical solution supply station 13 to the rinse / dry station 12 by the substrate transport robot 21. And the control apparatus 4 wash | cleans the chemical | medical solution adhering to the lower surface of the board | substrate W by supplying a pure water to the whole lower surface of the board | substrate W (S5). Thereafter, the control device 4 causes the substrate transport robot 21 to rotate the substrate W at a high rotational speed, thereby removing pure water adhering to the substrate W. Thereby, the substrate W is dried (S6). After the substrate W is dried, the control device 4 moves the substrate W from the rinse / dry station 12 to the carry-in / carry-out station 11 by the substrate transport robot 21. Thereafter, the control device 4 reverses the front and back of the substrate W by the reversing mechanism 33. As a result, the substrate W is placed on the substrate support member 32 in a horizontal posture with the surface facing upward. Then, the control device 4 causes the indexer robot 6 to carry out the substrate W placed on the substrate support member 32.

  The control device 4 causes the indexer robot 6 to transport the substrate W unloaded from the entire surface processing line 9 and the partial processing line 10 to the measuring unit 8 again. Thereby, the substrate W is carried into the measurement unit 8 in a horizontal posture with the surface facing upward, and the contamination state of the surface of the substrate W is measured by the measurement unit 8 (S7). The control device 4 acquires the measurement result of the measurement unit 8, and determines whether or not to supply the chemical solution to the substrate W again based on the measurement result (S8).

  Specifically, when the substrate W is not contaminated (YES in S8), the control device 4 causes the indexer robot 6 to transfer the substrate W from the measurement unit 8 to the carrier C, and to the substrate W. The supply of the chemical solution is terminated (S9). On the other hand, when the substrate W is contaminated (NO in S8), the control device 4 selects either one of the whole process sponge 41 and the partial process sponge 49 (returns to S3). . And a chemical | medical solution process, a rinse process, and a drying process are performed by the whole surface process line 209 or the partial process line 210 (2nd S4-6). Thereafter, the control device 4 causes the measurement unit 8 to measure the contamination state of the substrate W (second time S8). The control device 4 repeatedly executes such an operation until the contamination of the substrate W is eliminated.

  As described above, in the first embodiment, the substrate transport robot 21 relatively moves the sponges 41 and 49 supplied with the chemicals by the storage tanks 40 and 48 and the substrate W held by the substrate transport robot 21. The sponges 41 and 49 are brought into contact with the lower surface of the substrate W. As a result, the sponges 41 and 49 are elastically deformed, and the chemical solution absorbed by the sponges 41 and 49 oozes out. Therefore, a thin liquid film (chemical liquid film) is formed, and the lower surface of the substrate W is covered with this liquid film. Therefore, the chemical solution can be reliably supplied to the portion of the substrate W where the sponges 41 and 49 are in contact. Furthermore, since the chemical liquid is instantaneously supplied to the substrate W by the contact between the sponges 41 and 49 and the substrate W, the time required for supplying the chemical liquid can be shortened. In addition, since the chemical solution supplied to the lower surface of the substrate W is the minimum amount necessary to cover the contact portion with the sponges 41 and 49 on the lower surface of the substrate W, the consumption of the chemical solution can be reduced.

  Furthermore, when the sponges 41 and 49 and the substrate W come into contact with each other, the chemical solution is uniformly supplied to the contact portion between the sponges 41 and 49 on the lower surface of the substrate W. Therefore, the uniformity of processing is improved. Moreover, since the chemical solution supplied to the substrate W is small, it is possible to suppress or prevent the chemical solution supplied to the substrate W from flowing along the substrate W. That is, the chemical solution supplied to the substrate W remains on the substrate W. For example, when the chemical solution flows along the substrate W, there may be a difference in processing between a portion where the chemical solution is flowing and a portion where the chemical solution is not flowing. Therefore, the uniformity of processing can be further improved by suppressing or preventing the flow of the chemical solution. Further, since the chemical solution stays on the substrate W, the processing capability of the chemical solution is sufficiently exhibited. That is, for example, when the chemical liquid supplied to the substrate W is immediately discharged from the substrate W, the chemical liquid is separated from the substrate W in a state of having the ability to process the substrate W. Therefore, the chemical solution can be used efficiently by suppressing or preventing the flow of the chemical solution.

  In the first embodiment, the substrate transport robot 21 is controlled by the control device 4, so that one of the whole-surface processing sponge 41 and the partial processing sponge 49 comes into contact with the substrate W. Since the whole surface processing sponge 41 has a first substrate contact surface (an upper surface 41a of the whole surface processing sponge 41) having a size larger than the lower surface of the substrate W, the control device 4 contacts the whole surface processing sponge 41 and the substrate W. By doing so, the chemical solution can be instantaneously supplied to the entire lower surface of the substrate W. On the other hand, since the partial processing sponge 49 has a second substrate contact surface (an upper surface 49a of the partial processing sponge 49) that is smaller than the lower surface of the substrate W, the control device 4 contacts the partial processing sponge 49 and the substrate W. By doing so, the chemical solution can be supplied to a part of the lower surface of the substrate W. Therefore, it can suppress or prevent that a chemical | medical solution is supplied to the part which does not need supply of a chemical | medical solution.

  In the first embodiment, the contamination state of the substrate W is measured by the measurement unit 8. The control device 4 selects either one of the whole processing sponge 41 and the partial processing sponge 49 based on the measurement result of the measurement unit 8. When the partial processing sponge 49 is selected, the control device 4 sets the part of the lower surface of the substrate W that the partial processing sponge 49 contacts with each substrate W based on the measurement result of the measurement unit 8. Then, the control device 4 controls the substrate transport robot 21 so that the set portion and the partial processing sponge 49 come into contact with each other. Therefore, the partial processing sponge 49 can be reliably brought into contact with the contaminated portion of the substrate W, and the chemical solution can be reliably supplied to this portion. Thereby, the cleanliness of the substrate W can be improved.

  In the first embodiment, the substrate transport robot 21 compresses the sponges 41 and 49 in a state where the sponges 41 and 49 are immersed in the chemical solution stored in the storage tanks 40 and 48. After that, the compression of the sponges 41 and 49 by the substrate transfer robot 21 is released, and the sponges 41 and 49 are expanded and restored to their original shapes due to their elasticity. Such compression / expansion of the sponges 41 and 49 is repeated. When the sponges 41 and 49 are compressed, foreign matter adhering to the surfaces of the sponges 41 and 49 and foreign matters held inside the sponges 41 and 49 are discharged from the sponges 41 and 49 together with the chemical solution. Thereby, the foreign matter is removed from the sponges 41 and 49. Further, when the sponges 41 and 49 are expanded, the sponges 41 and 49 absorb the chemical liquid by their absorption power. Therefore, by repeatedly performing the compression / expansion of the sponges 41 and 49, the chemicals are repeatedly absorbed and discharged by the sponges 41 and 49, and foreign matters are reliably removed from the sponges 41 and 49. Thereby, when the sponges 41 and 49 and the substrate W come into contact with each other, it is possible to suppress or prevent the foreign matter from moving from the sponges 41 and 49 to the substrate W to contaminate the substrate W.

  In the first embodiment, the sponge cleaning device 56 includes a circulation pipe 44 connected to the storage tanks 40 and 48, and a filter 46 interposed in the circulation pipe 44. The chemical solution stored in the storage tanks 40 and 48 is discharged to the circulation pipe 44 and returns to the storage tanks 40 and 48 again through the circulation pipe 44. Thereby, the chemical | medical solution currently stored by the storage tanks 40 and 48 circulates. Foreign matter contained in the chemical flowing through the circulation pipe 44 is removed by the filter 46. Therefore, it is possible to suppress or prevent foreign substances contained in the chemical solution stored in the storage tanks 40 and 48 from adhering to the sponges 41 and 49. Thereby, when the sponges 41 and 49 and the substrate W come into contact with each other, it is possible to suppress or prevent the foreign matter from moving from the sponges 41 and 49 to the substrate W to contaminate the substrate W.

  In the first embodiment, the substrate transfer robot 21 slides the sponges 41 and 49 and the substrate W. Specifically, in a state where the sponges 41 and 49 and the substrate W are in contact with each other, the horizontal moving unit 28 of the substrate transport robot 21 reciprocates the sponges 41 and 49 in the line extending direction D2, thereby 49 and the substrate W are slid. Further, in a state where the sponges 41 and 49 and the substrate W are in contact with each other, the substrate transport robot 21 rotates the substrate W to slide the sponges 41 and 49 and the substrate W. Thereby, the foreign matter adhering to the lower surface of the substrate W is scraped off by the sponges 41 and 49. Thereby, the cleanliness of the substrate W can be improved.

  In the first embodiment, the control device 4 controls sliding between the sponges 41 and 49 and the substrate W based on the measurement result of the measurement unit 8. That is, for example, when the contamination level of the substrate W is high, the control device 4 causes the substrate transfer robot 21 to slide the sponges 41 and 49 and the substrate W. On the other hand, for example, when the contamination level of the substrate W is low, the control device 4 does not slide the sponges 41 and 49 and the substrate W. Thus, since the sliding of the sponges 41 and 49 and the substrate W is controlled according to the contamination state of the substrate W, the cleanliness of the substrate W can be stabilized.

  In the first embodiment, the control device 4 controls the pressing amount of the sponges 41 and 49 against the lower surface of the substrate W based on the measurement result of the measurement unit 8. That is, for example, when the contamination level of the substrate W is high, the control device 4 controls the substrate transport robot 21 and increases the amount of pressing compared to when the contamination level of the substrate W is low. As a result, the amount of the chemical liquid that exudes from the sponges 41 and 49 increases, and the amount of the chemical liquid supplied to the substrate W increases. Thus, since the supply amount of the chemical liquid to the lower surface of the substrate W is controlled according to the contamination state of the substrate W, the cleanliness of the substrate W can be stabilized.

  In the first embodiment, the substrate W is heated and cooled by the heater 47a and the cooler 47b. As a result, the temperature of the substrate W changes, and the substrate W expands and contracts. Further, when the substrate W is heated and cooled, the temperature of the foreign matter adhering to the substrate W changes, and the foreign matter expands and contracts. Therefore, both the substrate W and the foreign material expand and contract. When the expansion rate of the substrate W and the expansion rate of the foreign matter are different, the contact state between the substrate W and the foreign matter changes due to the expansion and contraction of the substrate W and the foreign matter, and the foreign matter is easily removed from the substrate W. In particular, since the heating and cooling of the substrate W are performed alternately, the temperature difference of the substrate W becomes larger than when only heating or cooling is performed. Therefore, it becomes easier to remove foreign substances from the substrate W. Thereby, the removal rate of a foreign material can be improved.

  In the first embodiment, the substrate transport robot 21 transports the substrate W. The substrate W transported by the substrate transport robot 21 moves from the loading / unloading station 11 to the supply stations 13 and 15. Thereafter, the substrate W moves to the carry-in / carry-out station 11 after passing through the supply stations 13 and 15 rinsing / drying station 12. The substrate W transported by the substrate transport robot 21 is processed by the chemical solution supplied from the sponges 41 and 49 at the supply stations 13 and 15. Further, the substrate W transported by the substrate transport robot 21 is processed by pure water supplied from the rinse liquid nozzle 51 in the rinse / dry station 12. That is, the chemical solution adhering to the substrate W is washed away with pure water. Thereafter, the substrate transport robot 21 rotates the substrate W at the rinse / dry station 12, thereby removing pure water adhering to the substrate W. Thereby, the substrate W is dried. As described above, the substrate transport robot 21 transports the substrate W, whereby a series of processes are performed on the substrate W.

  In the first embodiment, the carry-in / carry-out station 11, the rinse / dry station 12, and the supply stations 13 and 15 are arranged along the conveyance path 20 in this order. The substrate transport robot 21 transports the substrate W along the transport path 20. Accordingly, the substrate W transported by the substrate transport robot 21 moves from the carry-in / carry-out station 11 to the supply stations 13 and 15 through the rinse / dry station 12. Thereafter, the substrate W moves from the supply stations 13 and 15 to the carry-in / carry-out station 11 through the rinse / dry station 12. That is, the substrate W that has been rinsed and dried at the rinse / dry station 12 moves from the rinse / dry station 12 to the carry-in / carry-out station 11 without passing through the supply stations 13 and 15. Therefore, it is possible to suppress or prevent the atmosphere of the chemical solution floating on the supply stations 13 and 15 from adhering to the substrate W. Thereby, the cleanliness of the substrate W can be improved.

  Next explained is the second embodiment of the invention. The main difference between the second embodiment and the first embodiment described above is that the object to be conveyed is different. That is, in the first embodiment, the sponges 41 and 49 and the substrate W come into contact with each other when the substrate W is transported, whereas in the second embodiment, the sponges 41 and 49 are transported so that the sponge W 41 and 49 and the substrate W come into contact with each other. In the following FIGS. 14 to 18, the same components as those shown in FIGS. 1 to 13 are given the same reference numerals as those in FIG. 1 and the description thereof is omitted.

FIG. 14 is a schematic diagram showing a layout of the substrate processing apparatus 201 according to the second embodiment of the present invention.
The substrate processing apparatus 201 is a single wafer type substrate processing apparatus. The substrate processing apparatus 201 includes an indexer block 2, a processing block 203 that processes a substrate W carried into the indexer block 2, and a control device 4 that controls apparatuses and devices provided in the substrate processing apparatus 201. .

The indexer block 2 includes a carrier holding unit 5, an indexer robot 6, an IR moving mechanism 7, and a measurement unit 8. The indexer robot 6 transports the substrate W in the indexer block 2 and transports the substrate W between the indexer block 2 and the processing block 203.
The processing block 203 includes a plurality of (for example, four) processing lines 209 and 210 for processing the substrate W one by one. Each processing line 209, 210 extends in the line extending direction D2. The four processing lines 209 and 210 include two full-surface processing lines 209 that supply a chemical solution to the entire upper surface of the substrate W, and two partial processing lines 210 that supply a chemical solution to a part of the upper surface of the substrate W. The two full-surface processing lines 209 are vertically stacked, and the two partial processing lines 210 are vertically stacked. The upper overall processing line 209 and the upper partial processing line 210 are arranged at the same height and face each other in the horizontal direction. Similarly, the lower overall processing line 209 and the lower partial processing line 210 are disposed at the same height and face each other in the horizontal direction.

  The entire surface processing line 209 includes a first chemical solution supply station 213 that supplies a chemical solution to the entire upper surface of the substrate W, and a sponge transfer robot standby station in which a sponge transfer robot 221 (contact means, pressing amount changing means) described later is on standby. 214. These stations 213 and 214 are arranged in the line extending direction D2 in the order of the first chemical solution supply station 213 and the sponge transport robot standby station 214 from the indexer block 2 side. Similarly, the partial processing line 210 includes a second chemical solution supply station 215 that supplies a chemical solution to a part of the upper surface of the substrate W, and a sponge transfer robot standby station 214. These stations 215 and 214 are arranged in the line extending direction D2 in the order of the second chemical solution supply station 215 and the sponge transport robot standby station 214 from the indexer block 2 side. The partial processing line 210 has the same configuration as the entire surface processing line 209 except for the sponge. That is, the entire processing line 209 includes the entire processing sponge 41 that supplies the chemical liquid to the entire upper surface of the substrate W, and the partial processing line 210 includes the partial processing sponge 49 that supplies the chemical liquid to a part of the upper surface of the substrate W. It has.

FIG. 15 is a schematic diagram for explaining a schematic configuration of the entire surface processing line 209 according to the second embodiment of the present invention. FIG. 16 is a schematic diagram for explaining a schematic configuration of the partial processing line 210 according to the second embodiment of the present invention.
As described above, the partial processing line 210 has the same configuration as the entire surface processing line 209. Therefore, the entire surface processing line 209 will be mainly described below. Only the differences between the partial processing line 210 and the entire processing line 209 will be described.

  As shown in FIG. 15, the entire surface processing line 209 includes a sealed processing case 222. The first chemical solution supply station 213 and the sponge transfer robot standby station 214 are provided in the processing case 222. The 1st chemical | medical solution supply station 213 is arrange | positioned at the indexer block 2 side. The processing case 222 includes a box-shaped main body 223 having an opening 223a, a shutter 224 for opening and closing the opening 223a, and a shutter 224 between an open position where the opening 223a is opened and a closed position where the opening 223a is closed. And a shutter moving mechanism (not shown) for moving. The opening 223 a faces the indexer block 2 and is disposed at a position accessible by the indexer robot 6.

  As shown in FIG. 15, the first chemical supply station 213 includes a spin chuck 260 (substrate holding means) that holds the substrate W horizontally, and a rinse liquid that is directed toward the upper surface of the substrate W held by the spin chuck 260. As an example, a rinsing liquid nozzle 251 for discharging pure water, a rinsing liquid pipe 252 for supplying pure water to the rinsing liquid nozzle 251, a rinsing liquid valve 253 interposed in the rinsing liquid pipe 252, and a rinsing liquid nozzle 251 are provided. A nozzle moving mechanism 254 that moves in the horizontal direction, a cup 255 that receives the liquid discharged from the substrate W, a cup elevating mechanism 261 that raises and lowers the cup 255, and the liquid accumulated in the cup 255 is discharged out of the cup 255. And a discharge pipe (not shown).

  The spin chuck 260 holds a substrate W horizontally and rotates around a vertical substrate rotation axis L201 that passes through the center of the substrate W, and rotates around the substrate rotation axis L201. And a spin motor 263. The spin chuck 260 may be a clamping chuck that holds the substrate W horizontally by holding the substrate W in the horizontal direction, or by adsorbing the back surface (lower surface) of the substrate W that is a non-device forming surface. A vacuum chuck that holds the substrate W horizontally may be used. In the second embodiment, the spin chuck 260 is, for example, a vacuum chuck.

  The spin chuck 260 is accommodated in a bottomed cylindrical cup 255. The cup lifting mechanism 261 includes a loading / unloading position (a position indicated by a solid line) in which the upper end of the cup 255 is located below the holding position of the substrate W by the spin chuck 260, and the upper end of the cup 255 is the position of the substrate W by the spin chuck 260. The cup 255 is moved up and down between a processing position (a position indicated by a two-dot chain line) positioned above the holding position. When the substrate W is transported from outside the processing case 222, the indexer robot 6 handles the hand H with the opening 223a opened and the cup 255 placed at the loading / unloading position. Then, the substrate W is moved onto the spin chuck 260. Similarly, when the substrate W is transported out of the processing case 222, the indexer robot 6 is operated by the spin chuck with the opening 223a being opened and the cup 255 being disposed at the loading / unloading position. The substrate W placed on the substrate 260 is held by the hand H, and the substrate W is moved out of the processing case 222.

  As shown in FIG. 15, the sponge transfer robot standby station 214 of the entire processing line 209 includes a first storage tank 40, an entire processing sponge 41, a first holding member 42, an elevating mechanism 43, a circulation pipe 44, A pump 45, a filter 46, and a temperature adjusting device 247 (temperature changing means) are included. Furthermore, the sponge transfer robot standby station 214 includes a sponge transfer robot 221 that transfers the entire surface processing sponge 41 between the first chemical solution supply station 213 and the sponge transfer robot standby station 214. The temperature adjustment device 247 may be a heater or a cooler.

  Similarly, as shown in FIG. 16, the sponge transfer robot standby station 214 of the partial processing line 210 includes a first storage tank 40, a partial processing sponge 49, a first holding member 42, an elevating mechanism 43, and circulation piping. 44, a pump 45, a filter 46, and a temperature adjusting device 247. Further, the sponge transfer robot standby station 214 includes a sponge transfer robot 221 that transfers the partial processing sponge 49 between the second chemical solution supply station 215 and the sponge transfer robot standby station 214.

  As shown in FIG. 15, the sponge transport robot 221 includes a sponge holding unit 225 (sponge holding means), a vertical expansion / contraction unit 26, and a horizontal movement unit 28. Although not shown, the sponge transport robot 221 further includes an elevating mechanism 30 that expands and contracts the vertical expansion / contraction part 26 in the vertical direction and a rotation mechanism 31 that rotates the sponge holding part 225 around the vertical axis (see FIG. 4). The sponge holding part 225 is supported by the vertical elastic part 26 below the vertical elastic part 26. The vertical telescopic part 26 is supported by the horizontal moving part 28 below the horizontal moving part 28. The whole surface processing sponge 41 is held by the sponge holding unit 225 below the sponge holding unit 225. As shown in FIG. 16, the partial processing sponge 49 is held by the sponge holding unit 225 below the sponge holding unit 225.

  As shown in FIG. 15, the whole surface processing sponge 41 is immersed in the chemical liquid stored in the first storage tank 40, and when the chemical liquid is supplied to the substrate W, the first chemical liquid supply is performed by the sponge transport robot 221. Transported to station 213. Similarly, as shown in FIG. 16, the partial treatment sponge 49 is immersed in the chemical liquid stored in the first storage tank 40, and the chemical transfer robot 221 performs the first operation when the chemical liquid is supplied to the substrate W. It is conveyed to the two chemical solution supply station 215. In the second embodiment, the lower surface 41b of the entire process sponge 41 functions as a first substrate contact surface, and the lower surface 49b of the partial process sponge 49 functions as a second substrate contact surface.

  FIG. 17 is a schematic diagram showing a state where the entire surface processing sponge 41 is compressed in the chemical solution. FIG. 18 is a schematic diagram showing a state where the whole surface processing sponge 41 is compressed in the air. Below, an example of operation | movement when the whole surface process sponge 41 is wash | cleaned is demonstrated. Since the operation when the partial processing sponge 49 is cleaned is the same as that when the entire processing sponge 41 is cleaned, description thereof is omitted. In the following, reference is made to FIG. 15, FIG. 17, and FIG.

  When the entire surface processing sponge 41 is cleaned, the control device 4 moves the first holding member 42 to the cleaning position (position shown in FIG. 17) by the lifting mechanism 43. The control device 4 is configured so that the first holding member 42 is positioned at the cleaning position and the sponge transfer robot 221 is positioned above the first storage tank 40, and the vertical telescopic unit 26 of the sponge transfer robot 221. Is extended to lower the entire surface processing sponge 41 in a horizontal posture. As a result, the entire surface processing sponge 41 is immersed in the chemical solution, and the entire surface processing sponge 41 is vertically sandwiched between the sponge transport robot 221 and the first holding member 42 so that the entire surface processing sponge 41 is compressed in the chemical solution. . Therefore, the foreign matter held inside the entire surface processing sponge 41 is pushed out from the entire surface processing sponge 41 together with the chemical solution. And this foreign material is caught by the filter 46 by flowing through the circulation piping 44 with a chemical | medical solution. After the entire surface processing sponge 41 is compressed, the control device 4 contracts the vertical expansion / contraction part 26 of the sponge transport robot 221 to raise the entire surface processing sponge 41 in a horizontal posture. Thereby, the whole surface processing sponge 41 moves above the liquid level of the chemical solution, and leaves the chemical solution stored in the first storage tank 40. In addition, the entire surface processing sponge 41 is restored to its original shape while rising, and absorbs the chemical stored in the first storage tank 40.

  Next, the control device 4 moves the first holding member 42 to the throttle position (position shown in FIG. 18) by the lifting mechanism 43. Thereby, the 1st holding member 42 moves upwards rather than the liquid level of a chemical | medical solution, and leaves | separates from the chemical | medical solution stored in the 1st storage tank 40. FIG. Further, when the first holding member 42 moves to the throttle position, the first holding member 42 approaches the whole surface processing sponge 41, and the whole surface processing sponge 41 is sandwiched between the sponge transport robot 221 and the first holding member 42. Compressed in the air. Thereby, the whole surface processing sponge 41 is squeezed, and the foreign matter held inside the whole surface processing sponge 41 is pushed out from the whole surface processing sponge 41 together with the chemical solution. And the foreign material and the chemical | medical solution which were extruded from the whole surface processing sponge 41 fall in the 1st storage tank 40, and flow through the circulation piping 44. FIG. After the first holding member 42 has moved to the throttle position, the control device 4 moves the first holding member 42 to the cleaning position again. When the first holding member 42 moves to the cleaning position, the first holding member 42 is separated from the entire surface processing sponge 41, and the entire surface processing sponge 41 is restored to its original shape.

  As described above, in the second embodiment, the entire processing sponge 41 is compressed as the lifting mechanism 43 moves the first holding member 42. That is, in the second embodiment, the elevating mechanism 43 functions as a compression unit. The control device 4 causes the sponge transport robot 221 and the like to repeatedly execute the above-described operation. Thereby, compression and decompression of the whole surface processing sponge 41 in the chemical solution and compression and restoration of the whole surface treatment sponge 41 in the air are repeatedly executed. Accordingly, the foreign matter held in the entire surface processing sponge 41 is reliably removed, and the cleanness of the entire surface processing sponge 41 is increased. Therefore, when the whole surface processing sponge 41 and the substrate W come into contact with each other, it is possible to suppress or prevent contamination of the substrate W due to foreign matters moving from the whole surface processing sponge 41 to the substrate W.

Next, an example of processing of the substrate W according to the second embodiment of the present invention will be described. In the following, reference is made to FIG.
When the substrate W is processed by the substrate processing apparatus 201, the control device 4 carries out one substrate W from the carrier C by the indexer robot 6 (S1). Then, the control device 4 transports the substrate W to the measurement unit 8 by the indexer robot 6. Thereby, the substrate W is carried into the measurement unit 8 in a horizontal posture with the surface facing upward, and the contamination state of the surface of the substrate W is measured by the measurement unit 8 (S2). The control device 4 acquires the measurement result of the measurement unit 8, and selects either one of the whole process sponge 41 and the partial process sponge 49 based on the measurement result (S3). That is, for example, when the contaminated part is wide, the control device 4 selects the entire surface processing line 209 and causes the indexer robot 6 to carry the substrate W from the measuring unit 8 to the entire surface processing line 209. On the other hand, when the contaminated portion is narrow, the control device 4 selects the partial processing line 210 and causes the indexer robot 6 to transfer the substrate W from the measurement unit 8 to the partial processing line 210.

  When the control device 4 selects the entire surface processing line 209, the control device 4 causes the indexer robot 6 to carry the substrate W into the first chemical solution supply station 213. As a result, the substrate W is placed on the spin chuck 260 in a horizontal posture with the surface facing upward. Thereafter, the control device 4 moves the entire processing sponge 41 from the sponge transfer robot standby station 214 to the first chemical supply station 213 by the sponge transfer robot 221 with the rinse liquid nozzle 251 retracted from above the spin chuck 260. Let Thereby, the whole surface processing sponge 41 is disposed above the substrate W.

  Next, the control device 4 extends the vertical expansion / contraction portion 26 in a state where the entire surface processing sponge 41 is positioned above the substrate W, and lowers the entire surface processing sponge 41 in a horizontal posture. Thereby, the lower surface 41b of the whole surface processing sponge 41 is pressed to the entire upper surface of the stationary substrate W. Therefore, the chemical solution absorbed by the entire surface processing sponge 41 oozes out and is supplied to the entire upper surface of the substrate W (S4). Further, since the whole surface processing sponge 41 itself and the chemical solution absorbed in the whole surface processing sponge 41 are heated or cooled by the temperature adjusting device 247, the substrate W is heated by the contact between the whole surface processing sponge 41 and the substrate W. Or cooled.

  While the entire surface processing sponge 41 is pressed against the substrate W, the control device 4 may slide the entire surface processing sponge 41 and the substrate W by reciprocating the sponge transport robot 221 in the line extending direction D2. Further, while the entire surface processing sponge 41 is pressed against the substrate W, the control device 4 causes the entire surface processing sponge 41 and the substrate W to slide by rotating the entire surface processing sponge 41 around the vertical axis by the sponge transfer robot 221. It may be moved. Further, the control device 4 may increase or decrease the pressing amount of the whole surface processing sponge 41 against the upper surface of the substrate W by the sponge transport robot 221. That is, the control device 4 may control the pressing amount according to the contamination state of the substrate W.

  After the chemical solution is supplied to the substrate W at the first chemical solution supply station 213, the control device 4 causes the sponge transfer robot 221 to retract the entire processing sponge 41 to the sponge transfer robot standby station 214. Thereby, the whole surface processing sponge 41 is immersed in the chemical liquid stored in the first storage tank 40, and the chemical liquid is replenished to the whole surface processing sponge 41. Then, after the sponge transport robot 221 is retracted, the control device 4 rotates the substrate W around the substrate rotation axis L201 by the spin chuck 260. Further, the control device 4 opens the rinse liquid valve 253 in a state where the rinse liquid nozzle 251 is positioned above the spin chuck 260 and the cup 255 is positioned at the processing position. Let water discharge. Thereby, pure water is supplied to the entire upper surface of the substrate W, and the chemical solution adhering to the substrate W is washed away by the pure water (S5). Thereafter, the control device 4 closes the rinse liquid valve 253 and stops the discharge of pure water from the rinse liquid nozzle 251.

  Next, the control device 4 rotates the substrate W at a high rotation speed by the spin chuck 260 in a state where the cup 255 is positioned at the processing position. The pure water adhering to the substrate W is shaken off around the substrate W by the centrifugal force generated by the rotation of the substrate W. The pure water scattered around the substrate W and the pure water dropped from the substrate W are received by the cup 255 and discharged out of the cup 255 through the discharge pipe. Therefore, it is suppressed or prevented that the pure water supplied to the substrate W enters the first storage tank 40 and the pure water is mixed into the chemical solution. Further, the pure water adhering to the substrate W is shaken off around the substrate W, whereby the pure water is removed from the substrate W and the substrate W is dried (S6). After the substrate W is dried, the control device 4 moves the cup 255 to the loading / unloading position by the cup lifting mechanism 261. On the other hand, the control device 4 moves the shutter 224 to open the opening 223a. Then, the control device 4 causes the indexer robot 6 to carry out the substrate W held on the spin chuck 260.

  On the other hand, when the control device 4 selects the partial processing line 210, the control device 4 loads the substrate W into the second chemical solution supply station 215 by the indexer robot 6. As a result, the substrate W is placed on the spin chuck 260 in a horizontal posture with the surface facing upward. Thereafter, the control device 4 moves the partial processing sponge 49 from the sponge transport robot standby station 214 to the second chemical solution supply station 215 by the sponge transport robot 221 while the rinse liquid nozzle 251 is retracted from above the spin chuck 260. Let Thereby, the partial processing sponge 49 is disposed above the substrate W.

  Next, in a state where the partial processing sponge 49 is positioned above the substrate W, the control device 4 extends the vertical expansion / contraction part 26 and lowers the partial processing sponge 49 in a horizontal posture. Accordingly, the lower surface 49b of the partial processing sponge 49 is pressed against a part of the upper surface of the stationary substrate W. Therefore, the chemical solution absorbed by the partial processing sponge 49 oozes out and is supplied to a part of the upper surface of the substrate W (S4). Further, since the partial treatment sponge 49 itself and the chemical solution absorbed in the partial treatment sponge 49 are heated or cooled by the temperature adjustment device 247, the partial treatment sponge 49 and the substrate W come into contact with each other, whereby the substrate W is heated. Or cooled.

  When the partial processing sponge 49 is pressed against the upper surface of the substrate W, the control device 4 is based on the measurement result of the measurement unit 8 so that the contaminated portion of the upper surface of the substrate W comes into contact with the partial processing sponge 49. The position of the partial processing sponge 49 in the line stretching direction D2 and the rotation angle of the substrate W around the substrate rotation axis L201 are controlled. In other words, the control device 4 sets the portion of the upper surface of the substrate W where the partial processing sponge 49 comes into contact for each substrate W based on the measurement result of the measurement unit 8. Then, the control device 4 controls the sponge transport robot 221 and the spin chuck 260 so that the partial processing sponge 49 is pressed against the set portion. Thereby, a chemical | medical solution is supplied to the part set by the control apparatus 4. FIG. That is, the chemical solution is reliably supplied to the contaminated portion on the upper surface of the substrate W.

  While the partial processing sponge 49 is pressed against the substrate W, the control device 4 may slide the partial processing sponge 49 and the substrate W by reciprocating the sponge transport robot 221 in the line extending direction D2. In addition, while the partial processing sponge 49 is pressed against the substrate W, the control device 4 may cause the partial processing sponge 49 and the substrate W to slide by rotating the partial processing sponge 49 by the sponge transfer robot 221. Good. Further, the control device 4 may increase / decrease the pressing amount of the partial processing sponge 49 against the upper surface of the substrate W by the sponge transfer robot 221. That is, the control device 4 may control the pressing amount according to the contamination state of the substrate W.

  After the chemical liquid is supplied to the substrate W at the second chemical liquid supply station 215, the control device 4 retracts the partial processing sponge 49 from the second chemical liquid supply station 215 by the sponge transport robot 221. Thereby, the partial treatment sponge 49 is immersed in the chemical solution stored in the first storage tank 40, and the partial treatment sponge 49 is replenished with the chemical solution. Then, after the sponge transport robot 221 is retracted, the control device 4 rotates the substrate W around the substrate rotation axis L201 by the spin chuck 260. Further, the control device 4 opens the rinse liquid valve 253 in a state where the rinse liquid nozzle 251 is positioned above the spin chuck 260 and the cup 255 is positioned at the processing position. Let water discharge. Thereby, pure water is supplied to the entire upper surface of the substrate W, and the chemical solution adhering to the substrate W is washed away by the pure water (S5). Thereafter, the control device 4 closes the rinse liquid valve 253 and stops the discharge of pure water from the rinse liquid nozzle 251.

  Next, the control device 4 rotates the substrate W at a high rotation speed by the spin chuck 260 in a state where the cup 255 is positioned at the processing position. The pure water adhering to the substrate W is shaken off around the substrate W by the centrifugal force generated by the rotation of the substrate W. The pure water scattered around the substrate W and the pure water dropped from the substrate W are received by the cup 255 and discharged out of the cup 255 through the discharge pipe. Therefore, it is suppressed or prevented that the pure water supplied to the substrate W enters the first storage tank 40 and the pure water is mixed into the chemical solution. Further, the pure water adhering to the substrate W is shaken off around the substrate W, whereby the pure water is removed from the substrate W and the substrate W is dried (S6). After the substrate W is dried, the control device 4 moves the cup 255 to the loading / unloading position by the cup lifting mechanism 261. On the other hand, the control device 4 moves the shutter 224 to open the opening 223a. Then, the control device 4 causes the indexer robot 6 to carry out the substrate W held on the spin chuck 260.

  The control device 4 causes the indexer robot 6 to transport the substrate W unloaded from the entire surface processing line 209 and the partial processing line 210 to the measurement unit 8 again. Thereby, the substrate W is carried into the measurement unit 8 in a horizontal posture with the surface facing upward, and the contamination state of the surface of the substrate W is measured by the measurement unit 8 (S7). The control device 4 acquires the measurement result of the measurement unit 8, and determines whether or not to supply the chemical solution to the substrate W again based on the measurement result (S8).

  Specifically, when the substrate W is not contaminated (YES in S8), the control device 4 causes the indexer robot 6 to transfer the substrate W from the measurement unit 8 to the carrier C, and to the substrate W. The supply of the chemical solution is terminated (S9). On the other hand, when the substrate W is contaminated (NO in S8), the control device 4 selects either one of the whole process sponge 41 and the partial process sponge 49 (returns to S3). . And a chemical | medical solution process, a rinse process, and a drying process are performed by the whole surface process line 209 or the partial process line 210 (2nd S4-6). Thereafter, the control device 4 causes the measurement unit 8 to measure the contamination state of the substrate W (second time S7). The control device 4 repeatedly executes such an operation until the contamination of the substrate W is eliminated.

Although the embodiments of the present invention have been described above, the present invention is not limited to the contents of the first and second embodiments described above, and various modifications can be made within the scope of the claims. is there.
For example, in the first and second embodiments described above, the case where the substrate is heated and cooled by heating and cooling the chemical flowing through the circulation pipe has been described. However, the substrate may be heated and cooled by heating and cooling the chemical stored in the storage tank. Further, the sponge may be directly heated and cooled, or the substrate may be directly heated and cooled.

In the first and second embodiments described above, the case where the liquid adhering to the substrate is shaken off by centrifugal force to dry the substrate has been described. However, the substrate may be dried by removing the liquid adhering to the substrate by blowing gas onto the substrate.
In the first and second embodiments described above, the case where the substrate processing apparatus is an apparatus for processing a disk-shaped substrate has been described. However, the substrate processing apparatus may be an apparatus for processing a polygonal substrate such as a substrate for a liquid crystal display device.

  In addition, various design changes can be made within the scope of matters described in the claims.

1 substrate processing apparatus 4 control device (contact control means, sponge selection means, contact position setting means, sliding control means, pressing amount control means, temperature control means)
8 Measuring unit (contamination state measuring means)
11 Loading / Unloading Station 12 Rinse / Drying Station 13 First Chemical Solution Supply Station (Supply Station)
15 Second chemical supply station (supply station)
20 transport path 21 substrate transport robot (substrate holding means, contact means, compression means, sliding means, pressing amount changing means, drying means, transport means)
40 1st storage tank (treatment liquid supply means, cleaning tank)
41 Full-surface treatment sponge (sponge)
41a Upper surface of first surface treatment sponge (first substrate contact surface)
41b Bottom surface of whole surface processing sponge (first substrate contact surface)
42 1st holding member (sponge holding means)
43 Lifting mechanism (compression means)
44 Circulating piping 46 Filter 47a Heater (temperature changing means, heating means)
47b cooler (temperature changing means, cooling means)
48 Second storage tank (treatment liquid supply means, cleaning tank)
49 Partially treated sponge (sponge)
49a Upper surface of the partially treated sponge (second substrate contact surface)
49b Lower surface of the partially treated sponge (second substrate contact surface)
50 Second holding member (sponge holding means)
51 Rinsing liquid nozzle (rinsing liquid supply means)
56 Sponge cleaning device (sponge cleaning means)
201 substrate processing apparatus 221 sponge transfer robot (contact means, sliding means, pressing amount changing means)
225 Sponge holding part (sponge holding means)
247 Temperature adjusting device (temperature changing means)
260 Spin chuck (substrate holding means)

Claims (13)

Full-surface processing sponge having a first substrate contact surface larger than the main surface of the substrate and capable of absorbing the processing liquid and elastically deforming, and a second substrate contact surface smaller than the main surface of the substrate and processing A sponge including a partially-treated sponge capable of absorbing liquid and elastically deformable ;
Treatment liquid supply means for supplying a treatment liquid to the sponge;
Substrate holding means for holding the substrate;
Contact means for supplying the processing liquid absorbed by the sponge to the main surface of the substrate by relatively moving the sponge and the main surface of the substrate held by the substrate holding means to bring them into contact with each other; ,
By controlling the contact means, contact control means for bringing either one of the whole-surface processing sponge and the partial processing sponge into contact with the main surface of the substrate held by the substrate holding means , Substrate processing equipment. The substrate processing apparatus includes:
A contamination state measuring means for measuring the contamination state of the substrate;
A sponge selection means for selecting one of the whole-process sponge and the partial-process sponge based on the measurement result of the contamination state measurement means;
When the partial processing sponge is selected by the sponge selection means, a contact position setting is set for each substrate based on the measurement result of the contamination state measurement means, on the main surface of the substrate, the portion that the partial processing sponge contacts Further comprising means,
The contact control means is held by the partial processing sponge and the substrate holding means so that the part set by the contact position setting means and the partial processing sponge come into contact with each other by controlling the contact means. relatively moving the main surface of the substrate that are, the substrate processing apparatus according to claim 1. Further comprising a sponge washing means for washing the sponge, the substrate processing apparatus according to claim 1 or 2. The sponge cleaning means includes
A cleaning tank for storing a treatment liquid in which the sponge is immersed;
A sponge holding means for holding the sponge in a state in which the sponge is immersed in the processing liquid stored in the cleaning tank;
The substrate processing apparatus according to claim 3 , further comprising a compression unit that compresses the sponge held by the sponge holding unit. The substrate processing apparatus according to claim 4 , wherein the sponge cleaning unit further includes a circulation pipe that circulates the processing liquid stored in the cleaning tank, and a filter that removes foreign substances from the processing liquid flowing through the circulation pipe. Sliding means for sliding the sponge and the substrate by relatively moving the sponge and the substrate in a state where the sponge and the main surface of the substrate held by the substrate holding means are in contact with each other; Furthermore, the substrate processing apparatus as described in any one of Claims 1-5 further included. A contamination state measuring means for measuring the contamination state of the substrate;
The substrate processing apparatus according to claim 6 , further comprising a sliding control unit that controls sliding of the sponge and the substrate based on a measurement result of the contamination state measuring unit by controlling the sliding unit. . A contamination state measuring means for measuring the contamination state of the substrate;
A pressing amount changing means for changing the pressing amount of the sponge against the main surface of the substrate held by the substrate holding means;
By controlling the pushing amount changing means, further comprising a pressing amount control means for changing the pressing amount on the basis of the measurement result of the contaminated measuring means, according to any one of claims 1-7 Substrate processing equipment. Further comprising a temperature changing means for changing the temperature of the substrate, the substrate processing apparatus according to any one of claims 1-8. The temperature changing means includes a heating means for heating the substrate, a cooling means for cooling the substrate, and a temperature control means for executing alternating heating and cooling of the substrate by the heating and cooling means, according to claim 9, wherein Substrate processing equipment. Rinsing liquid supply means for supplying a rinsing liquid to the substrate;
A drying means for drying the substrate;
A supply station for supplying the processing liquid from the sponge to the substrate;
A rinsing / drying station for supplying the rinse liquid from the rinse liquid supply means to the substrate and drying the substrate by the drying means;
And a loading / unloading station where substrates are loaded and unloaded,
Transporting means for transporting the substrate so that the substrate moves from the loading / unloading station to the supply station and then moves from the supply station to the loading / unloading station through the rinse / drying station; Furthermore, the substrate processing apparatus as described in any one of Claims 1-10 containing. The substrate processing apparatus further includes a transport path through which the substrate is transported,
The carry-in / carry-out station, the rinse / dry station, and the supply station are arranged along the conveyance path in this order,
The substrate processing apparatus according to claim 11 , wherein the transport unit transports a substrate along the transport path. Full-surface processing sponge having a first substrate contact surface larger than the main surface of the substrate and capable of absorbing the processing liquid and elastically deforming, and a second substrate contact surface smaller than the main surface of the substrate and processing a step of liquid supplying a process liquid by absorbable elastically deformable portion processing sponge and, one sponge in the processing solution supply means, and to absorb the processing liquid on the one sponge,
The one sponge that has absorbed the processing liquid and the main surface of the substrate held by the substrate holding means are moved relative to each other by the contact means to bring the processing liquid absorbed by the one sponge into the main surface of the substrate. And a substrate processing method.

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