JP5729314B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor device in which two semiconductor elements are connected in series and a method for manufacturing the same.

  Conventionally, there is a semiconductor device disclosed in Patent Document 1 as an example of a semiconductor device in which two semiconductor elements are connected in series.

  This semiconductor device is formed by connecting a first and a second semiconductor package. Each semiconductor package is obtained by molding a semiconductor element sandwiched between a pair of metal bodies with a mold resin, exposing the outer surface (heat radiation surface) of each metal body from the mold resin, and one of the pair of metal bodies. And a connection terminal exposed from the mold resin. The connection terminals of the first semiconductor package and the connection terminals of the second semiconductor package are in direct contact and are electrically connected by welding or the like. Moreover, the connection part to which these both connection terminals are connected is molded by an insulating member having electrical insulation.

  Further, in the semiconductor device of the modified example (FIG. 10 of Patent Document 1), the connection terminal of each semiconductor package is provided so as to protrude from the end portion not facing the counterpart semiconductor package.

JP 2007-35670 A

  By using the semiconductor device of the above-described modified example, the interval between the semiconductor packages can be narrowed. Therefore, downsizing of the semiconductor device can be expected.

  However, the modified semiconductor device uses two molded semiconductor packages. Each semiconductor package has a structure for ensuring electrical insulation between a semiconductor element and a structure composed of a pair of metal bodies and the outside, and ensuring connection reliability at the interface between the semiconductor element and the metal body. Mold resin is provided up to a predetermined range around the heat dissipation surface of the body (for example, FIG. 1 and FIG. 10 of Patent Document 1). Of course, each semiconductor package is also provided with a mold resin on the sides facing each other. Thus, this semiconductor device has a problem that the size of the two semiconductor packages increases because the two semiconductor packages have the mold resin on the sides facing each other.

  In addition, this semiconductor device has a problem that two molding processes, that is, a molding process of a semiconductor package and a molding process of a connection portion are necessary.

  SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and in the case where two semiconductor elements are connected in series, the semiconductor device and the manufacturing of the semiconductor device that can be miniaturized while reducing the number of molding steps. It aims to provide a method.

In order to achieve the above object, the invention described in claim 1
A semiconductor device in which a first semiconductor element (1) having electrodes on both sides and a second semiconductor element (2) having electrodes on both sides are connected in series,
A first semiconductor element (1);
While sandwiching the first semiconductor element (1), a pair of heat radiating portions (3a, 5a made of a metal connected to each electrode of the first semiconductor element (1) and functioning as a heat radiating member of the first semiconductor element (1) )When,
A first connection body having a first connection portion (3b) made of metal provided protruding from one heat dissipation portion (3a) in the pair of heat dissipation portions (3a, 5a);
A second semiconductor element (2);
While sandwiching the second semiconductor element (2), a pair of heat radiating portions (4a, 6a) each made of a metal connected to each electrode of the second semiconductor element (2) and functioning as a heat radiating member of the second semiconductor element (2) )When,
A second structure having a second connection portion (6b) made of metal provided protruding from one heat dissipation portion (6a) in the pair of heat dissipation portions (4a, 6a);
A mold resin (10) integrally molding the first structure and the second structure,
The first structure and the second structure include a stacking direction of the first semiconductor element (1) and the pair of heat radiation parts (3a, 5a), a second semiconductor element (2) and the pair of heat radiation parts (4a, 5a). 6a) are arranged in parallel with each other in the stacking direction, and one side in the pair of heat dissipating portions (3a, 5a) is connected to each other and a virtual plane along the stacking direction and one in the pair of heat dissipating portions (4a, 6a). The two sides are connected to each other and a virtual plane along the stacking direction is opposed to each other.
The first connection portion (3b) and the second connection portion (6b) are electrically connected outside the region sandwiched between the virtual planes of the first structure and the second structure, and the mold resin ( 10) It is embedded in the inside.

  Thus, since the first structure and the second structure are integrally molded with the mold resin (10), it is not necessary to mold the first structure and the second structure separately. . That is, the mutually opposing sides in the first structure and the second structure can be sealed (filled) with the common mold resin (10). Therefore, the space | interval of a 1st structure and a 2nd structure can be narrowed rather than the case where two structures are separately molded. Moreover, since the 1st connection part (3b) and the 2nd connection part (6b) are electrically connected outside the area | region pinched | interposed into the mutual virtual plane in a 1st structure and a 2nd structure, The distance between the first structure and the second structure can be made narrower than when the first structure and the second structure are electrically connected in the region sandwiched between the virtual planes. . Therefore, the size of the semiconductor device can be reduced.

  Furthermore, the 1st connection part (3b) and the 2nd connection part (6b) are embed | buried in the mold resin (10) which has integrally molded the 1st structure and the 2nd structure. Therefore, the first connection part (3b) and the second connection part (6b) can be molded together by molding the first structure and the second structure in a lump. Therefore, the molding process can be reduced as compared with the case of using two pre-molded semiconductor packages as in the above-described prior art.

As shown in claim 2,
A first block body (7) made of metal provided between one electrode of the first semiconductor element (1) and the heat dissipating part (3a);
A second block body (8) made of metal provided between one electrode of the second semiconductor element (2) and the heat radiating portion (4a),
The first block body (7) and the heat radiating portion (3a), the second block body (8) and the heat radiating portion (4a), and the first connection portion (3b) and the second connection portion (6b) are made of the same material. The conductive connecting members (91e, 91f, 91g) may be connected.

  By doing in this way, a 1st block body (7), a thermal radiation part (3a), a 2nd block body (8), a thermal radiation part (4a), a 1st connection part (3b), and a 2nd connection part (6b) ) Can be connected at the same time. If such a plurality of locations are connected separately, stress may be applied to the previously connected location when another location is connected later, and connection reliability may be reduced. However, by connecting simultaneously, there is a low possibility that stress is applied to the connection location, and a decrease in connection reliability can be suppressed.

  According to a third aspect of the present invention, at least one of the first connection portion (33b) and the second connection portion (63b) is thinner than the heat dissipation portion (33a, 53a, 43a, 63a). Also good.

  By doing in this way, a 1st connection part (33b) and a 2nd connection part (63b) can be easily embed | buried under mold resin (10).

In addition, the semiconductor device, specifically, as shown in claim 4,
A first external connection terminal made of metal and connected to one heat radiating portion (5a) of the pair of heat radiating portions (3a, 5a) and partially exposed to the outside of the mold resin (10) (5b)
A second external connection terminal made of metal and connected to one heat radiating portion (4a) of the pair of heat radiating portions (4a, 6a) and partially exposed to the outside of the mold resin (10) (4c)
A third external connection terminal made of metal and connected to one heat radiating portion (6a) of the pair of heat radiating portions (4a, 6a) and partly exposed to the outside of the mold resin (10) (6c) may be provided.

  Further, as shown in claim 5, the thickness of the first connection portion (32b) and the second connection portion (62b) is such that the first external connection terminal (52b), the second external connection terminal (42c), and the third external portion. You may make it thicker than a connection terminal (62c).

  By doing in this way, compared with the case where the thickness of the 1st connection part (32b) and the 2nd connection part (62b) is thin compared with the 1st external connection terminal (52b) etc., the 1st connection part (32b). And the cross-sectional area of the second connection portion (62b) can be increased. Therefore, it is preferable because the inductance of the semiconductor device can be made smaller than when the thickness of the first connection portion (32b) and the second connection portion (62b) is thinner than the first external connection terminal (52b).

  Moreover, by doing in this way, compared with the case where the thickness of a 1st connection part (32b) and a 2nd connection part (62b) is thin compared with a 1st external connection terminal (52b) etc., a 1st connection part ( 32b) and the second connecting portion (62b) can be prevented from warping, and the tolerance at the time of connecting the first connecting portion (32b) and the second connecting portion (62b) can be reduced.

  Further, as shown in claim 6, the second connection portion (61b) may be provided in a part of the third external connection terminal (61c).

  By doing in this way, a connection with the 1st connection part (31b) and the 2nd connection part (61b) can be performed in the position near the external member (bus bar) connected to the 3rd external connection terminal (61c). Therefore, the inductance of the semiconductor device can be reduced.

As shown in claim 7,
The fourth is made of metal and connected to the first semiconductor element (1) without going through the pair of heat radiating portions (3a, 5a), and partly exposed to the outside of the mold resin (10). An external connection terminal (11);
The fifth is made of metal and connected to the second semiconductor element (2) without going through the pair of heat radiating portions (4a, 6a), and partly exposed to the outside of the mold resin (10). An external connection terminal (12),
The fourth external connection terminal (11) and the fifth external connection terminal (12) are exposed in the same direction from the mold resin (10) and pass through one side of the fourth external connection terminal (11) in the stacking direction. The virtual plane along the virtual plane along the stacking direction through one side of the fifth external connection terminal (12),
The first connection portion (3b) and the second connection portion (6b) are connected in a region sandwiched between the virtual planes of the fourth external connection terminal (11) and the fifth external connection terminal (12). You may do it.

  Thus, in addition to the first external connection terminal (5b), the second external connection terminal (4c), and the third external connection terminal (6c), the fourth external connection terminal (11) and the fifth external connection terminal are provided. (12) may be provided. In this case, the fourth external connection terminal (11) and the fifth external connection terminal (12), the first external connection terminal (5b), the second external connection terminal (4c), and the third external connection terminal (6c) The mold resin (10) is often exposed to the outside from different directions. Therefore, by making it as shown in claim 7, the first connection part (3b) and the second connection part (6b) are connected to the first external connection terminal (5b), the second external connection terminal (4c), the first It is possible to prevent the three external connection terminals (6c) from being obstructed. That is, it is possible to prevent the first external connection terminal (5b), the second external connection terminal (4c), and the third external connection terminal (6c) from interfering with an external member (for example, a bus bar). Can do.

  Moreover, as shown in Claim 8, one heat radiating part (3a) in a pair of heat radiating part (3a, 5a) and one heat radiating part (4a) in a pair of heat radiating part (4a, 6a) are the same. You may make it form.

  This is preferable because the types of components constituting the semiconductor device can be reduced.

In order to achieve the above object, the invention according to claim 9 provides:
A method for manufacturing a semiconductor device according to claim 1, wherein:
This is a step of mounting the first semiconductor element (1) and the second semiconductor element (2) on a lead frame (20) including the heat radiating part (5a) and the heat radiating part (6a). A mounting step of mounting so that one electrode in one semiconductor element (1) faces and one electrode in the heat dissipating part (6a) and the second semiconductor element (2) faces;
An attaching step of attaching the heat dissipating part (3a) on the other electrode of the first semiconductor element (1) and attaching the heat dissipating part (4a) on the other electrode of the second semiconductor element (2);
A connection step of electrically connecting the first connection portion (3b) and the second connection portion (6b);
The first semiconductor element (1) is sandwiched between the pair of heat radiation portions (3a, 5a), the second semiconductor element (2) is sandwiched between the pair of heat radiation portions (4a, 6a), and the first connection portion (3b) And the second connection portion (6b) are electrically connected to each other, while exposing the heat radiation surfaces of the heat radiation portions (3a, 5a) and the heat radiation portions (4a, 6a), the first connection portion (3b) And a molding step of collectively molding the first structure including the second structure including the second connection portion (6b).

  Thus, by molding the first structure including the first connection part (3b) and the second structure including the second connection part (6b) in a lump, the first semiconductor element (1) and the pair of A 1st connection part (3b) and a 2nd connection part (6b) can be molded with a thermal radiation part (3a, 5a), a 2nd semiconductor element (2), and a pair of thermal radiation part (4a, 6a). Therefore, the molding process can be reduced as compared with the case of using two pre-molded semiconductor packages as in the above-described prior art.

  In addition, since it is not necessary to mold the first structure and the second structure separately, the opposite sides of the first structure and the second structure are sealed with a common mold resin (10). Can stop (fill). Therefore, the space | interval of a 1st structure and a 2nd structure can be narrowed rather than the case where two structures are separately molded. Moreover, in order to electrically connect a 1st connection part (3b) and a 2nd connection part (6b) outside the opposing area | region of a 1st structure and a 2nd structure, a 1st structure and a 2nd structure The space | interval of a 1st structure and a 2nd structure can be narrowed rather than the case where it is electrically connected within the opposing area | region with a body. Therefore, a miniaturized semiconductor device can be manufactured.

It is a top view (perspective view) which shows schematic structure of the semiconductor device in embodiment. It is the II-II sectional view taken on the line of FIG. It is a circuit diagram showing an equivalent circuit of a semiconductor device in an embodiment. It is a top view of a lead frame for explaining a mounting process. It is the VV sectional view taken on the line of FIG. It is drawing which shows schematic structure of a 1st metal body and a 3rd metal body, (a) is a top view, (b) is a side view from VIb direction of Fig.6 (a). It is a top view of the lead frame in an embodiment. It is the VIII-VIII sectional view taken on the line of FIG. It is a top view of a lead frame for explaining a molding process. 10 is a plan view (perspective view) illustrating a schematic configuration of a semiconductor device according to Modification 1. FIG. It is the XI-XI sectional view taken on the line of FIG. 10 is a plan view showing a lead frame in Modification 1. FIG. It is drawing which shows schematic structure of a 1st metal body and a 3rd metal body, (a) is a top view, (b) is a side view from the XIIIb direction of Fig.13 (a). 10 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to Modification 2. FIG. 10 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to Modification 3. FIG. 10 is a cross-sectional view illustrating a schematic configuration of a semiconductor device according to Modification 4. FIG. 10 is a plan view (perspective view) illustrating a schematic configuration of a semiconductor device according to Modification 5. FIG. It is the XVIII-XVIII sectional view taken on the line of FIG. 10 is a plan view (perspective view) illustrating a schematic configuration of a semiconductor device according to Modification 6. FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  A semiconductor device 100 shown in FIGS. 1, 2, and 3 is formed by connecting a first semiconductor element 1 having electrodes on both sides and a second semiconductor element 2 having electrodes on both sides in series. That is, the semiconductor device 100 forms an equivalent circuit as shown in FIG. For example, it is incorporated in an inverter circuit of a vehicle and applied as a device for PWM control of a load (for example, a motor). In other words, the semiconductor device 100 forms a so-called power card.

  The semiconductor device 100 mainly includes a first structure (upper arm) and a second structure (lower arm), which are integrally molded (sealed) with a mold resin (insulating resin) 10. It has been done. In other words, the semiconductor device 100 is a 2-in-1 package in which the first structure and the second structure are housed in one package. More specifically, the first structure and the second structure include a heat radiation surface in each of the heat radiation portions 3a to 6a, which will be described later, and a part (inner lead portion) in each of the N terminal 4c, the P terminal 5b, and the O terminal 6c. 4c1, portions other than the inner lead portion 5b1 and the inner lead portion 6c1) and portions of the signal terminals 11 and 12 (portions other than the inner lead portion 11a and the inner lead portion 12a) are sealed with the mold resin 10. Stopped (covered).

  As shown in FIGS. 1 and 2, the first structure mainly includes a first semiconductor element 1, a first metal body 3, and a second metal body 5. And as for the 1st structure, the thermal radiation part 5a of the 2nd metal body 5, the 1st semiconductor element 1, and the thermal radiation part 3a of the 1st metal body 3 are laminated | stacked in this order. The heat radiation part 3a and the heat radiation part 5a will be described in detail later. In addition, the stacking direction of the heat dissipating part 5a of the second metal body 5, the first semiconductor element 1, and the heat dissipating part 3a of the first metal body 3 is also simply referred to as a stacking direction.

  In addition to these, the first structure may include a block body 7 (first block body), a signal terminal 11, a bonding wire 13, and the like. This first structure is not molded alone, but is integrally molded with the second structure. Therefore, in a state where the semiconductor device 100 is not molded with the mold resin 10, the first semiconductor element 1, the first metal body 3, the second metal body 5, and the like are sealed with a resin material other than the mold resin 10. Absent.

  As described above, the first semiconductor element 1 includes electrodes (surface electrode and back electrode) on both surfaces, and switching elements such as IGBT, RC-IGBT, and MOSFET can be employed. Here, RC-IGBT is adopted. The first semiconductor element 1 is electrically connected to the signal terminal 11 through a bonding wire 13.

  The signal terminal 11 corresponds to the fourth external connection terminal in the claims of the present invention. The signal terminal 11 is made of metal and is connected to the first semiconductor element 1 without passing through the pair of heat radiating portions 3a and 5a. A part of the signal terminal 11 is disposed inside the mold resin 10 and the remaining portion is molded resin. 10 so as to be exposed to the outside. As shown in FIG. 1, the signal terminal 11 and the first semiconductor element 1 are electrically connected via a bonding wire 13.

  In addition, the part arrange | positioned inside the mold resin 10 among the signal terminals 11 is called the inner lead part 11a. The semiconductor device 100 is provided with a plurality of signal terminals 11. The plurality of signal terminals 11 are arranged in a direction orthogonal to the stacking direction. The plurality of signal terminals 11 are exposed from the mold resin 10 in the same direction as the signal terminals 12 described later. The plurality of signal terminals 11 and the plurality of signal terminals 12 are formed on the same plane.

  Therefore, a virtual plane (terminal virtual plane) passing through one side of the signal terminal 11 and extending along the stacking direction and a virtual plane passing through one side of the signal terminal 12 and extending along the stacking direction (terminal virtual plane). Are arranged opposite to each other. More specifically, a virtual plane (terminal virtual plane) passing through the side of the signal terminal 11 closest to the signal terminal 12 in the plurality of signal terminals 11 and along the stacking direction, and a plurality of signal terminals 12 An imaginary plane (terminal imaginary plane) that passes through the side of the signal terminal 12 closest to the signal terminal 11 and extends in the stacking direction is disposed to face the imaginary plane.

  The signal terminal 11 is a terminal through which a control signal for the first semiconductor element 1 flows. A main current terminal (P terminal) 5b, a main current terminal (N terminal) 4c, and a main current terminal (O terminal) which will be described later. Compared to 6c, a sufficiently small current flows. Therefore, the signal terminal 11 can be restated as a small current terminal. On the other hand, the main current terminal (N terminal) 4c and the main current terminal (O terminal) 6c can also be referred to as a large current terminal.

  The first metal body 3 includes a heat radiating portion 3a made of metal and an upper and lower arm connecting portion (first connecting portion) 3b made of metal. The heat dissipating part 3a is one of a pair of heat dissipating parts made of metal which is connected to each electrode of the first semiconductor element 1 and functions as a heat dissipating member of the first semiconductor element 1 while sandwiching the first semiconductor element 1 therebetween. is there. As shown in FIG. 6A and FIG. 6B, the heat radiating portion 3a has, for example, a rectangular parallelepiped shape.

  In addition, as shown in FIG. 2, the heat radiating portion 3 a has one surface facing one electrode (here, referred to as a surface electrode) of the first semiconductor element 1 and the other surface exposed from the mold resin 10. Has been placed. A surface exposed from the mold resin 10 in the heat radiating portion 3a becomes a heat radiating surface. Further, the heat radiating portion 3a is electrically connected to the surface electrode of the first semiconductor element 1 through the block body 7 made of metal and the conductive connection members 9c and 9e. In addition, solder etc. can be employ | adopted for electroconductive connection members other than the electroconductive connection members 9c and 9e and the electroconductive connection members 9c and 9e demonstrated below, for example.

  Therefore, the heat generated from the first semiconductor element 1 is transmitted to the heat radiating portion 3a through the conductive connecting member 9c, the block body 7, and the conductive connecting member 9e, and is radiated from the heat radiating surface of the heat radiating portion 3a. As described above, the first metal body 3 (heat radiating portion 3 a) functions as a heat radiating member in the first semiconductor element 1.

  The upper and lower arm connecting portion 3b corresponds to the first connecting portion in the claims of the present invention, and is provided so as to protrude from one side surface of the heat radiating portion 3a. More specifically, as shown in FIG. 1, the upper and lower arm connecting portion 3 b is on the side surface (here, the side surface adjacent to the side surface facing the heat radiating portion 4 a) other than the side surface facing the heat radiating portion 4 a in the heat radiating portion 3 a. Is provided. Preferably, the upper and lower arm connecting portion 3b is provided at a portion closest to the heat radiating portion 4a on this side surface. The upper and lower arm connecting portion 3b has a substantially L-shaped planar shape, for example. That is, as an example of the upper and lower arm connecting portion 3b, one having a portion extending perpendicularly to the side surface of the heat radiating portion 3a and a portion extending at a right angle from the tip of this portion can be employed.

  Further, as shown in FIG. 2, the upper and lower arm connecting portion 3b is electrically connected to the upper and lower arm connecting portion 6b in the second structure via a conductive connecting member 9g. As will be described later, the upper and lower arm connecting portion 6b is electrically connected to the main current terminal (O terminal) 6c of the semiconductor device 100 through the heat radiating portion 6a. That is, the first semiconductor element 1 is electrically connected to the O terminal 6c through the conductive connection member 9c, the block body 7, the conductive connection member 9e, the heat radiating portion 3a, the upper and lower arm connection portion 3b, and the like. It will be. Therefore, the first metal body 3 (the heat radiating portion 3 a and the upper and lower arm connecting portions 3 b) functions as part of the wiring in the semiconductor device 100. The block body 7 is made of metal, and is provided to prevent the bonding wire 13 from coming into contact with the heat radiating portion 3a.

  Thus, the first metal body 3 functions as a heat radiating member of the first semiconductor element 1 and also functions as part of the wiring in the semiconductor device 100. Therefore, the first metal body 3 is made of, for example, a metal material of any one of Cu, Au, Ag, Al, or an alloy containing at least one of these metals in order to ensure thermal conductivity and electrical conductivity. Is. However, even if it is other than these metal materials, if it is excellent in thermal conductivity and electrical conductivity, it can be adopted.

  In addition, the thermal radiation part 3a and the upper-lower arm connection part 3b are electrically and mechanically connected. In addition, the 1st metal body 3 may be the thing in which the heat radiating part 3a and the upper and lower arm connecting part 3b were integrally formed, or the heat radiating part 3a and the upper and lower arm connecting part 3b formed separately were It may be formed by being connected (welded). However, in this embodiment, the 1st metal body 3 in which the thermal radiation part 3a and the upper-and-lower arm connection part 3b were formed as an integral thing is employ | adopted.

  The second metal body 5 includes a heat radiating portion 5a made of metal and a main current terminal (P terminal) 5b made of metal. The second metal body 5 is cut from the lead frame 20 shown in FIG. The heat dissipating part 5a is one of a pair of heat dissipating parts made of metal that is connected to each electrode of the first semiconductor element 1 and functions as a heat dissipating member of the first semiconductor element 1 while sandwiching the first semiconductor element 1 therebetween. is there. This heat radiation part 5a has a rectangular parallelepiped shape, for example, like the heat radiation part 3a.

  Further, as shown in FIG. 2, the heat radiating portion 5 a has one surface facing one electrode (here, referred to as a back electrode) of the first semiconductor element 1 and the other surface exposed from the mold resin 10. Has been placed. A surface exposed from the mold resin 10 in the heat radiating portion 5a becomes a heat radiating surface. Moreover, the thermal radiation part 5a is electrically connected to the back surface electrode of the 1st semiconductor element 1 via the electroconductive connection member 9a.

  Therefore, the heat generated from the first semiconductor element 1 is transmitted to the heat radiating portion 5a via the conductive connecting member 9a and is radiated from the heat radiating surface of the heat radiating portion 5a. As described above, the second metal body 5 (heat radiating portion 5 a) functions as a heat radiating member in the first semiconductor element 1.

  The P terminal 5b corresponds to the first external connection terminal in the claims of the present invention, and is provided so as to protrude from one side surface of the heat radiating portion 5a. More specifically, as shown in FIGS. 1 and 4, the P terminal 5 b is on the side surface (here, the side surface adjacent to the side surface facing the heat radiating portion 6 a) other than the side surface facing the heat radiating portion 6 a in the heat radiating portion 5 a. Is provided. As shown in the equivalent circuit of the semiconductor device 100 in FIG. 3, the P terminal 5 b is a high potential side terminal in the semiconductor device 100. That is, the first semiconductor element 1 is electrically connected to the P terminal 5b through the conductive connection member 9a, the heat radiating portion 5a, and the like. Therefore, the second metal body 5 (the heat radiating portion 5 a and the P terminal 5 b) also functions as part of the wiring in the semiconductor device 100.

  Thus, the second metal body 5 functions as a heat radiating member of the first semiconductor element 1 and also functions as part of the wiring in the semiconductor device 100. Therefore, the second metal body 5 is made of, for example, any metal material of Cu, Au, Ag, Al, or an alloy containing at least one of these metals in order to ensure thermal conductivity and electrical conductivity. Is. However, even if it is other than these metal materials, if it is excellent in thermal conductivity and electrical conductivity, it can be adopted.

  The P terminal 5 b is provided so that a part thereof is disposed inside the mold resin 10 and the remaining part is exposed to the outside of the mold resin 10. In addition, the site | part arrange | positioned inside the mold resin 10 among P terminals 5b is called the inner lead part 5b1.

  As shown in FIG. 1, the P terminal 5 b is exposed to the mold resin 10 in the direction opposite to the signal terminal 11. That is, the signal terminal 11 is exposed from one side surface of the mold resin 10, and the P terminal 5 b is exposed from the opposite surface of the mold resin 10 from the side surface where the signal terminal 11 is exposed.

  Further, the second metal body 5 may be one in which the heat radiating portion 5a and the P terminal 5b are integrally formed, or the heat radiating portion 5a and the P terminal 5b that are separately formed are connected (welded). And may be formed. However, in this embodiment, the 2nd metal body 5 in which the thermal radiation part 5a and the P terminal 5b were formed as an integrated object (a part of lead frame) is employ | adopted.

  On the other hand, as shown in FIGS. 1 and 2, the second structure body is mainly configured to include a second semiconductor element 2, a third metal body 4, and a fourth metal body 6. . And as for the 2nd structure, the thermal radiation part 6a of the 4th metal body 6, the 2nd semiconductor element 2, and the thermal radiation part 4a of the 3rd metal body 4 are laminated | stacked in this order. Note that the stacking direction of the heat dissipating part 6a of the fourth metal body 6, the second semiconductor element 2, and the heat dissipating part 4a of the third metal body 4 is also simply referred to as the stacking direction. The stacking direction of the heat dissipating part 6a of the fourth metal body 6, the second semiconductor element 2, the heat dissipating part 4a of the third metal body 4, the heat dissipating part 5a of the second metal body 5, the first semiconductor element 1, the first metal The direction in which the heat radiating portion 3a of the body 3 is laminated is the same direction.

  In addition to the above, the second structure may include a block body 8 (second block body), a signal terminal 12, a bonding wire 14, and the like. The second structure is not molded alone, but is integrally molded with the first structure. Therefore, in a state where the semiconductor device 100 is not molded with the mold resin 10, the second semiconductor element 2, the third metal body 4, the fourth metal body 6, and the like are sealed with a resin material other than the mold resin 10. Absent.

  As with the first semiconductor element 1 described above, the second semiconductor element 2 can employ a switching element such as IGBT, RC-IGBT, or MOSFET. Here, the same type of RC-IGBT as the first semiconductor element is employed. The second semiconductor element 2 is electrically connected to the signal terminal 12 via the bonding wire 14. The signal terminal 12 corresponds to the fifth external connection terminal in the claims of the present invention, and is the same as the signal terminal 11 described above.

  In addition, the part arrange | positioned inside the mold resin 10 among the signal terminals 12 is called the inner lead part 12a. The signal terminal 12 is a terminal through which a control signal for the second semiconductor element 2 flows. A main current terminal (P terminal) 5b, a main current terminal (N terminal) 4c, and a main current terminal (O terminal) which will be described later. Compared to 6c, a sufficiently small current flows. Therefore, the signal terminal 12 can be restated as a small current terminal.

  The third metal body 4 is a metal body similar to (same shape as) the first metal body 3. The third metal body 4 includes a heat radiation part 4a made of metal and a terminal connection part 4b made of metal. The heat dissipating part 4a is one of a pair of heat dissipating parts made of metal that is connected to each electrode of the second semiconductor element 2 and functions as a heat dissipating member of the second semiconductor element 2 while sandwiching the second semiconductor element 2 therebetween. is there. As shown in FIGS. 6A and 6B, the heat radiating portion 4a has, for example, a rectangular parallelepiped shape. That is, the heat radiation part 3a and the heat radiation part 4a have the same shape.

  Further, as shown in FIG. 2, the heat radiating portion 4 a has one surface facing one electrode (here, referred to as a surface electrode) of the second semiconductor element 2 and the other surface exposed from the mold resin 10. Has been placed. A surface exposed from the mold resin 10 in the heat radiating portion 4a becomes a heat radiating surface. Further, the heat radiating portion 4a is electrically connected to the surface electrode of the second semiconductor element 2 through the block body 8 made of metal and the conductive connection members 9d and 9f.

  Therefore, the heat generated from the second semiconductor element 2 is transmitted to the heat radiating portion 4a through the conductive connecting member 9d, the block body 8, and the conductive connecting member 9f, and is radiated from the heat radiating surface of the heat radiating portion 4a. As described above, the third metal body 4 (heat radiating portion 4 a) functions as a heat radiating member in the second semiconductor element 2.

  The terminal connection portion 4b is provided so as to protrude from one side surface of the heat dissipation portion 4a. More specifically, as shown in FIG. 1, the terminal connection portion 4b is provided on a side surface (here, a side surface adjacent to the side surface facing the heat radiation portion 3a) other than the side surface facing the heat radiation portion 3a in the heat radiation portion 4a. It has been. Preferably, the terminal connection part 4b is provided in the site | part nearest to the thermal radiation part 3a in this side surface. The terminal connection portion 4b has the same shape as the upper and lower arm connection portion 3b.

  As shown in FIG. 1, the terminal connection portion 4b is electrically connected to the main current terminal (N terminal) 4c through a conductive connection member (not shown). The N terminal 4c corresponds to the second external connection terminal in the claims of the present invention. As shown in the equivalent circuit of the semiconductor device 100 in FIG. 3, the N terminal 4 c is a low potential (ground) side terminal in the semiconductor device 100. That is, the second semiconductor element 2 is electrically connected to the N terminal 4c through the conductive connection member 9d, the block body 8, the conductive connection member 9f, the heat radiation part 4a, the terminal connection part 4b, and the like. It will be. Therefore, the third metal body 4 (the heat radiating portion 4 a and the terminal connecting portion 4 b) also functions as part of the wiring in the semiconductor device 100. The block body 8 is made of metal and is provided to prevent the bonding wire 13 from coming into contact with the heat radiating portion 3a.

  Thus, the third metal body 4 functions as a heat radiating member of the second semiconductor element 2 and also functions as part of the wiring in the semiconductor device 100. Therefore, the third metal body 4 is made of, for example, a metal material of any one of Cu, Au, Ag, Al, or an alloy containing at least one of these metals in order to ensure thermal conductivity and electrical conductivity. Is. However, even if it is other than these metal materials, if it is excellent in thermal conductivity and electrical conductivity, it can be adopted.

  The N terminal 4 c is provided so that a part thereof is disposed inside the mold resin 10 and the remaining part is exposed to the outside of the mold resin 10. In addition, the part arrange | positioned inside the mold resin 10 among the N terminals 4c is called the inner lead part 4c1. The terminal connection portion 4b is electrically connected to the inner lead portion 4c1 of the N terminal 4c via a conductive connection member.

  As shown in FIG. 1, the N terminal 4 c is exposed to the mold resin 10 in the direction opposite to the signal terminals 11 and 12. That is, the signal terminals 11 and 12 are exposed from one side surface of the mold resin 10, and the N terminal 4 c is exposed from the opposite surface of the mold resin 10 from the side surface where the signal terminals 11 and 12 are exposed. ing.

  Moreover, the thermal radiation part 4a and the terminal connection part 4b are electrically and mechanically connected. The third metal body 4 may be one in which the heat radiating portion 4a and the terminal connecting portion 4b are formed as an integrated body, or the heat radiating portion 4a and the terminal connecting portion 4b that are separately formed are connected ( It may be formed by welding. However, in this embodiment, the 3rd metal body 4 in which the thermal radiation part 4a and the terminal connection part 4b were formed as an integral thing is employ | adopted.

  The fourth metal body 6 includes a heat radiating portion 6a made of metal, an upper and lower arm connecting portion (second connecting portion) 6b made of metal, and a main current terminal (O terminal) 6c made of metal. The fourth metal body 6 is cut from the lead frame 20 shown in FIG. The heat dissipating part 6a is one of a pair of heat dissipating parts made of metal that is connected to each electrode of the second semiconductor element 2 and functions as a heat dissipating member of the second semiconductor element 2 while sandwiching the second semiconductor element 2 therebetween. is there. The heat radiating portion 6a has, for example, a rectangular parallelepiped shape, similarly to the heat radiating portion 4a.

  Further, as shown in FIG. 2, the heat radiating portion 6 a has one surface facing one electrode (here, referred to as a back electrode) of the second semiconductor element 2 and the other surface exposed from the mold resin 10. Has been placed. A surface exposed from the mold resin 10 in the heat radiating portion 6a becomes a heat radiating surface. Moreover, the heat radiating part 6a is electrically connected to the back electrode of the second semiconductor element 2 via the conductive connection member 9b.

  Therefore, the heat generated from the second semiconductor element 2 is transmitted to the heat radiating portion 6a via the conductive connecting member 9b and radiated from the heat radiating surface of the heat radiating portion 6a. As described above, the fourth metal body 6 (heat radiation portion 6 a) functions as a heat radiation member in the second semiconductor element 2.

  The upper and lower arm connecting portion 6b corresponds to the second connecting portion in the claims of the present invention, and is provided so as to protrude from one side surface of the heat radiating portion 6a. More specifically, as shown in FIG. 1, the upper and lower arm connecting portion 6 b is on the side surface (here, the side surface adjacent to the side surface facing the heat radiating portion 5 a) other than the side surface facing the heat radiating portion 5 a in the heat radiating portion 6 a. Is provided. Preferably, the upper and lower arm connecting portion 6b is provided at a portion closest to the heat radiating portion 5a on this side surface. The upper and lower arm connecting portion 6b has a substantially L-shaped planar shape, for example. That is, as an example of the upper and lower arm connecting portion 6b, one having a portion extending perpendicularly to the side surface of the heat radiating portion 3a and a portion extending at a right angle from the tip of this portion can be employed. However, as shown in FIG. 2, the portion bent at a right angle has a shape bent obliquely upward from the tip of the portion extending perpendicularly to the side surface of the heat radiating portion 3 a. As shown in FIG. 2, the upper and lower arm connecting portion 6b is electrically connected to the upper and lower arm connecting portion 3b in the first structure via a conductive connecting member 9g.

  As an example, the upper and lower arm connecting portion 6b and the upper and lower arm connecting portion 3b described above have the same thickness (width in the stacking direction). The upper and lower arm connecting portions 6b and the upper and lower arm connecting portions 3b are thinner than the heat radiating portions 6a and the heat radiating portions 3a.

  The O terminal 6c corresponds to the third external connection terminal in the claims of the present invention, and is provided so as to protrude from one side surface of the heat radiating portion 6a. More specifically, as shown in FIGS. 1 and 4, the O terminal 6 c is on a side surface (here, a side surface adjacent to the side surface facing the heat radiating portion 5 a) other than the side surface facing the heat radiating portion 5 a in the heat radiating portion 6 a. Is provided. As shown in the equivalent circuit of the semiconductor device 100 in FIG. 3, the O terminal 6 c is an output terminal in the semiconductor device 100. That is, the second semiconductor element 2 is electrically connected to the O terminal 6c via the conductive connection member 9b, the heat radiating portion 6a, and the like. Therefore, the fourth metal body 6 (the heat radiating portion 6 a and the O terminal 6 c) functions also as part of the wiring in the semiconductor device 100.

  As described above, the fourth metal body 6 functions as a heat radiating member of the second semiconductor element 2 and also functions as part of the wiring in the semiconductor device 100. Therefore, the fourth metal body 6 is made of, for example, any metal material of Cu, Au, Ag, Al, or an alloy containing at least one of these metals in order to ensure thermal conductivity and electrical conductivity. Is. However, even if it is other than these metal materials, if it is excellent in thermal conductivity and electrical conductivity, it can be adopted.

  The O terminal 6 c is provided such that a part thereof is disposed inside the mold resin 10 and the remaining portion is exposed to the outside of the mold resin 10. In addition, the site | part arrange | positioned inside the mold resin 10 among the O terminals 6c is called the inner lead part 6c1.

  As shown in FIG. 1, the O terminal 6 c is exposed to the mold resin 10 in the direction opposite to the signal terminal 12. That is, the signal terminal 12 is exposed from one side surface of the mold resin 10, and the O terminal 6 c is exposed from the opposite side of the side surface of the mold resin 10 where the signal terminal 12 is exposed. As described above, the signal terminals 11 and 12 are exposed in the same direction with respect to the mold resin 10. Further, the P terminal 5b, the N terminal 4c, and the O terminal 6c are exposed in the same direction with respect to the mold resin 10. The P terminal 5b, the N terminal 4c, and the O terminal 6c are exposed from the opposite side of the side surface of the molding resin 10 where the signal terminals 11 and 12 are exposed.

  Further, the heat dissipating part 6a, the upper and lower arm connecting part 6b, and the O terminal 6c are electrically and mechanically connected. The fourth metal body 6 may be one in which the heat dissipating part 6a, the upper and lower arm connecting part 6b, and the O terminal 6c are formed as one body, or the heat dissipating part 6a and the upper and lower arm connected separately formed. The part 6b and the O terminal 6c may be formed by being connected (welded). The fourth metal body 6 has the upper and lower arm connecting portions 6b or O terminals 6c formed separately from the heat radiating portion 6a, and the upper and lower arm connecting portions 6b or O terminals 6c formed separately are radiated. It may be formed by being connected (welded) to the portion 6a. However, in this embodiment, the 4th metal body 6 in which the thermal radiation part 6a, the up-and-down arm connection part 6b, and the O terminal 6c were formed as an integrated object is employ | adopted.

  As shown in FIG. 1 and the like, the first structure and the second structure configured as described above are arranged in parallel with each other in the stacking direction. That is, the heat dissipation part 5a of the second metal body 5 in the first structure, the stacking direction of the first semiconductor element 1, the heat dissipation part 3a of the first metal body 3, and the heat dissipation part of the fourth metal body 6 in the second structure. 6a, the 2nd semiconductor element 2, and the lamination direction of the thermal radiation part 4a of the 3rd metal body 4 are arrange | positioned in parallel. Furthermore, one side part in a pair of heat radiation part 3a, 5a in a 1st structure is connected, and the virtual plane which follows a lamination direction, and one side part in a pair of heat radiation part 4a, 6a in a 2nd structure are connected. A virtual plane along the stacking direction is arranged to face. In other words, one side portion (side surface) of the heat radiating portion 3a and one side portion (side surface) of the heat radiating portion 4a face each other, and one side portion (side surface) of the heat radiating portion 5a and one side of the heat radiating portion 6a. Two side portions (side surfaces) are arranged to face each other. That is, as shown in FIG. 2, the heat radiating portion 3 a and the heat radiating portion 4 a are formed on the same plane, and the heat radiating portion 5 a and the heat radiating portion 6 a are formed on the same plane. The two semiconductor elements 2 are formed on the same plane.

  Moreover, the mounting directions of the first semiconductor element 1 and the second semiconductor element 2 are the same. That is, the emitter electrode of the first semiconductor element 1 and the emitter electrode of the second semiconductor element 2 are arranged so as to face the same direction, and the collector electrode of the first semiconductor element 1 and the collector electrode of the second semiconductor element 2 are the same. It is arranged to face the direction.

  Further, as shown in FIG. 1 and the like, the upper and lower arm connecting portion 3b and the upper and lower arm connecting portion 6b are arranged outside the region sandwiched between the virtual planes of the first structure and the second structure, The structure and the second structure are electrically connected outside the region sandwiched between the virtual planes. Further, the upper and lower arm connecting portion 3b and the upper and lower arm connecting portion 6b are arranged in a region sandwiched between the virtual planes of the signal terminal 11 and the signal terminal 12, and the signal terminal 11 and the signal terminal 12 Are connected in a region sandwiched between virtual planes.

  The upper and lower arm connecting portion 3b and the upper and lower arm connecting portion 6b are embedded in a mold resin 10 in which the first structure and the second structure are integrally molded. That is, the upper and lower arm connecting portions 3b and the upper and lower arm connecting portions 6b are sealed (that is, covered) with the mold resin 10 for sealing the first semiconductor element 1, the second semiconductor element 2, and the like. . Therefore, the upper and lower arm connecting portion 3b and the upper and lower arm connecting portion 6b are arranged in a region (hereinafter also simply referred to as between signal terminals) sandwiched between the virtual planes of the inner lead portion 11a and the inner lead portion 12a. The inner lead portion 11a and the inner lead portion 12a are connected in a region sandwiched between virtual planes.

  In addition, the semiconductor device 100 is also connected in an N shape because the upper and lower arm connecting portions 3b provided in the heat radiating portion 3a and the upper and lower arm connecting portions 6b provided in the heat radiating portion 6a are connected. be able to. That is, the semiconductor device 100 can also be referred to as an N-shaped semiconductor device. Further, since the semiconductor device 100 can dissipate heat from both sides of the first semiconductor element 1 and the second semiconductor element 2, it can also be called a semiconductor device having a double-sided heat dissipation structure.

  In the semiconductor device 100 of the present embodiment, the thicknesses of the heat radiating part 3a to the heat radiating part 6a are all the same. However, the present invention is not limited to this. For example, the thickness of the heat radiation part 3a and the heat radiation part 4a may be the same, the thickness of the heat radiation part 5a and the heat radiation part 6a may be the same, and the thickness of the heat radiation part 3a and the heat radiation part 5a may be different.

  As described so far, the semiconductor device 100 according to the present embodiment has the first structure and the second structure because the first structure and the second structure are integrally molded with the mold resin 10. There is no need to mold the structure separately. That is, the mutually opposing sides (regions sandwiched between virtual planes) of the first structure and the second structure can be sealed (filled) with the common mold resin 10. Therefore, the space | interval of a 1st structure and a 2nd structure can be narrowed rather than the case where two structures are separately molded. Moreover, since the upper and lower arm connecting portion 3b and the upper and lower arm connecting portion 6b are electrically connected outside the region sandwiched between the virtual planes of the first structure and the second structure, the first structure The distance between the first structure and the second structure can be made narrower than in the case where the first structure and the second structure are electrically connected within the region sandwiched between the virtual planes. Therefore, the size of the semiconductor device 100 can be reduced.

  The mold resin 10 seals the first semiconductor element 1, the second semiconductor element 2, and the like, and is provided up to a predetermined range around each of the heat radiation portions 3a to 6a. This is to ensure the insulation between the parts of the semiconductor device 100 exposed from the mold resin 10 and having different potentials. For example, the heat radiation surface of the heat radiation part 3a and the signal terminal 11, the heat radiation surface of the heat radiation part 4a and the signal terminal 12, the heat radiation surface of the heat radiation part 3a and the P terminal 5b, the heat radiation surface of the heat radiation part 4a and the O terminal 6c, etc. This is to ensure the sex.

  When using two pre-molded semiconductor packages as in the prior art described above, in addition to the need for a mold resin to ensure insulation in a predetermined range around each heat radiating portion (each metal body) The mold resin is also required in a predetermined range around each upper and lower arm connecting portion (each connecting terminal).

  On the other hand, the semiconductor device 100 according to the present embodiment is arranged so that it can be accommodated in the mold resin 10 provided in a predetermined range around each of the heat radiating portions 3a to 6a in order to ensure insulation as described above. It is preferable to provide arm connecting portions 3b and 6b. That is, it is preferable that the upper and lower arm connecting portions 3b and 6b are provided so as to be accommodated in the mold resin 10 provided to ensure insulation. By doing in this way, the physique can be made smaller than the semiconductor device in the above-mentioned prior art.

  That is, the semiconductor device 100 according to the present embodiment requires only the mold resin 10 provided in a predetermined range around each of the heat radiating portions 3a to 6a, and is separately provided in a predetermined range around the upper and lower arm connecting portions 3b and 6b. Since there is no need to provide a mold resin, the physique can be made smaller than the semiconductor device in the above-described prior art. Further, as described above, the upper and lower arm connecting portions 3b and 6b are buried in the mold resin 10 for sealing the first semiconductor element 1 and the second semiconductor element 2, so that the creeping distance from the heat radiating portions 4a and 5a is a problem. Therefore, the size of the semiconductor device 100 is not limited.

  In addition, it is conceivable that a semiconductor device having a double-sided heat dissipation structure attaches a heat dissipation surface provided on both sides to a cooler. However, when using two pre-molded semiconductor packages as in the prior art described above, there is a possibility that the thickness variation between the semiconductor packages will occur, and the heat radiation surfaces exposed in the same direction may not be formed on the same surface. is there. In this case, the semiconductor package (heat dissipating surface) and the cooler are not easily adapted (poor contactability), and there is a concern about deterioration of cooling performance.

  On the other hand, the semiconductor device 100 according to the present embodiment is exposed in the same direction because the first structure and the second structure are in one package (since they are molded integrally). The heat dissipation surfaces (the heat dissipation surface of the heat dissipation portion 3a and the heat dissipation surface of the heat dissipation portion 4a, and the heat dissipation surface of the heat dissipation portion 5a and the heat dissipation surface of the heat dissipation portion 6a) are easily formed on the same surface. Therefore, when the heat radiating surface is attached to the cooler, the semiconductor package (heat radiating surface) and the cooler are easily familiar (good contactability), and deterioration of the cooling performance can be suppressed.

  In addition, as shown in FIG. 1 and the like, the semiconductor device 100 of the present embodiment includes signal terminals 11 and 12 in addition to the N terminal 4c, the P terminal 5b, and the O terminal 6c. The signal terminals 11, 12 and the N terminal 4c, P terminal 5b, and O terminal 6c are exposed to the outside from different directions in the mold resin 10. Further, by arranging the upper and lower arm connecting portion 3b and the upper and lower arm connecting portion 6b in a region sandwiched between the virtual planes of the signal terminal 11 and the signal terminal 12, the upper and lower arm connecting portion 3b and the upper and lower arm It is possible to prevent the connecting portion 6b from interfering with the N terminal 4c, the P terminal 5b, and the O terminal 6c.

  That is, it is possible to prevent the N terminal 4c, the P terminal 5b, and the O terminal 6c from interfering with external members (for example, a bus bar). Furthermore, the arrangement of the N terminal 4c, the P terminal 5b, and the O terminal 6c can be easily configured (the degree of freedom in arrangement is improved). For example, as shown in FIG. 1, the P terminal 5b, the N terminal 4c, and the O terminal 6c can be arranged in this order from the left. As a result, in configuring the inverter, the arrangement of the bus bars connected to the P terminal 5b, the N terminal 4c, and the O terminal 6c can be simplified, and the inductance by the bus bar can be reduced from the left to the P terminal 5b, the O terminal 6c, and the N terminal. It can be made smaller than the case where the terminals 4c are arranged in this order.

  Further, as in the present embodiment, the upper and lower arm connecting portions 3b and 6b are electrically connected outside the region sandwiched between the virtual planes of the first structure and the second structure, so that the upper and lower arm connecting portions 3b are connected. Tools necessary for connecting the upper and lower arm connecting portion 6b (for example, a collet for supplying a conductive connecting member such as solder, a welding electrode, etc.) can be easily supplied (the heat radiating portion does not get in the way), Assembling becomes easy.

  In addition, the semiconductor device 100 according to the present embodiment connects the upper and lower arm connecting portion 3b and the upper and lower arm connecting portion 6b outside the region sandwiched between the virtual planes of the first structure and the second structure, It is not necessary to provide a region for connecting the upper and lower arms on the heat dissipating part 3a (surface facing the first semiconductor element 1) and on the heat dissipating part 6a (surface facing the second semiconductor element 2). Therefore, it is possible to design the dimensions of the heat dissipating parts 3a to 6a (particularly, the heat dissipating part 3a and the heat dissipating part 6a) to the minimum values considering only the heat dissipating property and the assembling property of the first semiconductor element 1 and the second semiconductor element 2. it can. For this reason, the size reduction of the semiconductor device 100 can be expected.

  In addition, as shown in FIG. 6, the semiconductor device 100 according to the present embodiment has the same shape and the same material for the first metal body 3 and the third metal body 4, so that the types of components of the semiconductor device 100 are the same. Can be reduced. That is, as the first metal body 3, one in which the heat radiating portion 3 a and the upper and lower arm connecting portions 3 b are configured as an integral part is adopted, and as the third metal body 4, the heat radiating portion 4 a and the terminal connecting portion 4 b are integrated. The one composed of parts is adopted. The heat radiating portion 3a and the heat radiating portion 4a have the same shape and the same material, and the upper and lower arm connecting portion 3b and the terminal connecting portion 4b have the same shape and the same material. As a result, the types of components of the semiconductor device 100 can be reduced.

  In the semiconductor device 100 according to the present embodiment, since the upper and lower arm connecting portions 3b and the upper and lower arm connecting portions 6b are thinner than the heat radiating portions 3a to 6a, the upper and lower arm connecting portions 3b and 6b are connected to each other. It can be easily embedded in the mold resin 10.

  Here, an example of a manufacturing method of the semiconductor device 100 shown in FIG. 1 will be described. First, a lead frame 20 as shown in FIG. 4 is prepared. In FIG. 4, the first semiconductor element 1, the second semiconductor element 2, the block bodies 7 and 8, and the bonding wires 13 and 14 are also illustrated.

  The lead frame 20 includes a second metal body 5, a fourth metal body 6, and an N terminal 4c. That is, the lead frame 20 includes the heat radiating part 5a, the heat radiating part 6a, and the like. Further, in the lead frame 20 illustrated in FIG. 4, the same reference numerals as those of the components of the semiconductor device 100 are given to the portions that are the components of the semiconductor device 100. For example, reference numeral 5 b in FIG. 4 is a portion that becomes the P terminal 5 b in the semiconductor device 100.

  As shown in FIGS. 4 and 5, the first semiconductor element 1 and the second semiconductor element 2 are mounted on the lead frame 20 (mounting process). At this time, the heat radiating portion 5a (region that becomes the heat radiating portion 5a) and one electrode of the first semiconductor element 1 are opposed to each other, and the heat radiating portion 6a (region that becomes the heat radiating portion 6a) and one of the second semiconductor elements 2 Mount so that the electrodes face each other. Furthermore, the heat radiating part 5a and the first semiconductor element 1 are mounted via a conductive connection member 9a. On the other hand, the heat radiating part 6a and the second semiconductor element 2 are mounted via a conductive connection member 9b.

  As shown in FIGS. 4 and 5, the block body 7 is mounted on the other electrode of the first semiconductor element 1 via a conductive connection member 9 c. On the other hand, the block body 8 is mounted on the other electrode of the second semiconductor element 2 via the conductive connection member 9d. Further, before the mounting process described later, the control electrode (not shown) of the first semiconductor element 1 and the signal terminal 11 are electrically connected by the bonding wire 13 and the control electrode (not shown) of the second semiconductor element 2 is shown. And the signal terminal 12 are electrically connected by a bonding wire 14.

  As shown in FIGS. 7 and 8, the first metal body 3 (heat dissipating part 3a) is disposed on the other electrode of the first semiconductor element 1 (specifically, on the block body 7) via a conductive connecting member 9e. And the third metal body 4 (heat dissipating part 4a) is attached to the other electrode of the second semiconductor element 2 (specifically, on the block body 8) via the conductive connection member 9f (attachment step). At this time, it attaches so that the block body 7 and the heat radiating part 3a of the first metal body 3 face each other, and the block body 8 and the heat radiating part 4a of the third metal body 4 face each other. As described above, the same shape is formed as shown in FIG.

  Further, as shown in FIG. 8, the upper and lower arm connecting portions 3b and the upper and lower arm connecting portions 6b are electrically connected via a conductive connecting member 9g (connection process).

  Then, as shown in FIG. 9, it molds (molding process). That is, the first semiconductor element 1 is sandwiched between the pair of heat radiation portions 3a and 5a, the second semiconductor element 2 is sandwiched between the pair of heat radiation portions 4a and 6a, and the upper and lower arm connection portions 3b and the upper and lower arm connection portions 6b are The first structure including the upper and lower arm connecting portions 3b and the second structure including the upper and lower arm connecting portions 6b while exposing the heat radiating surfaces of the heat radiating portions 3a and 5a and the heat radiating portions 4a and 6a in the electrically connected state. The body is molded together (molding process). Further, after this molding step, the lead frame is cut at a lead cut portion indicated by a thick dotted line in FIG.

  The first semiconductor element 1 is sandwiched between the pair of heat radiation portions 3a and 5a, the second semiconductor element 2 is sandwiched between the pair of heat radiation portions 4a and 6a, and the upper and lower arm connection portions 3b and the upper and lower arm connection portions 6b are provided. After molding the first structure and the second structure in an electrically connected state, a grinding step (surface for exposing one surface (heat radiating surface) of each of the heat radiating portions 3a to 6a to the outside of the mold resin 10 The unloading step) may be performed. That is, you may make it expose one surface of the thermal radiation part 3a, 5a used as a thermal radiation surface and the thermal radiation part 4a, 6a from the mold resin 10 by grinding.

  Thus, by molding the first structure including the upper and lower arm connecting portions 3b and the second structure including the upper and lower arm connecting portions 6b in a lump, the first semiconductor element 1, the pair of heat radiating portions 3a and 5a, Along with the second semiconductor element 2 and the pair of heat radiating portions 4a and 6a, the upper and lower arm connecting portions 3b and the upper and lower arm connecting portions 6b can be molded. Therefore, the molding process can be reduced as compared with the case of using two pre-molded semiconductor packages as in the above-described prior art.

  In addition, since it is not necessary to mold the first structure and the second structure separately as described above, the opposing sides of the first structure and the second structure (regions sandwiched between the virtual planes) Can be sealed with a common mold resin 10. Therefore, the space | interval of a 1st structure and a 2nd structure can be narrowed rather than the case where two structures are separately molded. Further, the upper and lower arm connecting portion 3b and the upper and lower arm connecting portion 6b are disposed outside the opposing region of the first structure and the second structure (region sandwiched between the virtual planes of the first structure and the second structure). The distance between the first structure and the second structure is narrower than that in the case where the first structure and the second structure are electrically connected to each other. can do. Therefore, the miniaturized semiconductor device 100 can be manufactured.

  Further, as shown in FIG. 4, the semiconductor device 100 of the present embodiment includes a second metal body 5 (including a P terminal 5b and a heat dissipation part 5a) and a fourth metal body 6 (including an O terminal 6c and a heat dissipation part 6a). ) Since the upper and lower arm connecting portions 6b, the N terminal 4c, and the signal terminals 11 and 12 are formed of an integrated lead frame, the number of parts can be reduced.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not restrict | limited to the embodiment mentioned above at all, and various deformation | transformation are possible in the range which does not deviate from the meaning of this invention.

(Modification 1)
Here, the semiconductor device 110 in Modification 1 will be described. The semiconductor device 100 in the above-described embodiment employs an example in which the upper and lower arm connecting portions 3b and 6b are disposed between the signal terminals. However, the semiconductor device of the present invention is not limited to this.

  As in the semiconductor device 110 of the first modification shown in FIGS. 10 and 11, the upper and lower arm connecting portions 6b may be provided in a part of the O terminal 61c. In the semiconductor device 110 according to the first modification, the same points as those of the semiconductor device 100 according to the above-described embodiment are denoted by the same reference numerals in the drawings and the description thereof is omitted.

  The first structure of the semiconductor device 110 mainly includes a first metal body 31, a first semiconductor element 1, and a second metal body 51. On the other hand, the second structure of the semiconductor device 120 mainly includes a third metal body 41, a second semiconductor element 2, and a fourth metal body 61.

  The first metal body 31 includes a heat radiating portion 31a and an upper and lower arm connecting portion 31b. The heat dissipation part 31a is the same as the heat dissipation part 3a described above. On the other hand, the shape of the upper and lower arm connecting portion 31b is slightly different from that of the upper and lower arm connecting portion 3b described above.

  The upper and lower arm connecting portion 31b is provided so as to protrude from one side surface of the heat radiating portion 31a. More specifically, as shown in FIG. 10, the upper and lower arm connecting portion 31 b is on the side surface (here, the side surface adjacent to the side surface facing the heat radiation portion 41 a) other than the side surface facing the heat radiation portion 41 a in the heat radiation portion 3 a. Is provided. Preferably, the upper and lower arm connecting portion 31b is provided on the side surface closest to the heat radiating portion 41a. The upper and lower arm connecting portion 31b has, for example, a flat plate shape. That is, as an example of the upper and lower arm connecting portion 31b, one extending perpendicularly to the side surface of the heat radiating portion 3a can be employed.

  Further, the first metal body 31 may be one in which the heat dissipating part 31a and the upper and lower arm connecting part 31b are formed as one body, or the heat dissipating part 31a and the upper and lower arm connecting part 31b that are separately formed. It may be formed by being connected (welded).

  Although the 2nd metal body 51 differs in the code | symbol from the 2nd metal body 5 in the above-mentioned embodiment, it is the same thing. Therefore, the second metal body 51 includes a heat radiating part 51a (similar to the heat radiating part 5a) and a P terminal 51b (similar to the P terminal 5b). In addition, the code | symbol part 51b1 in FIG. 10 is an inner lead part of the P terminal 51c.

  As shown in FIGS. 13A and 13B, the third metal body 41 is the same as the first metal body 31 in the above-described embodiment. Therefore, the third metal body 41 includes a heat radiating part 41a (similar to the heat radiating part 31a) and a terminal connecting part 41b (similar to the upper and lower arm connecting part 31b). This is preferable because the types of components constituting the semiconductor device 110 can be reduced.

  The terminal connection portion 41b is connected to the N terminal 41 (similar to the N terminal 4c). A sign portion 41c1 in FIG. 10 is an inner lead portion of the N terminal 41c. Further, the third metal body 41 may be one in which the heat radiating portion 41a and the terminal connecting portion 41b are formed as an integrated object, or the heat radiating portion 41a and the terminal connecting portion 41b that are separately formed are connected ( It may be formed by welding.

  The fourth metal body 61 includes an O terminal 61c in which a heat radiating portion 61a and upper and lower arm connecting portions 61b are formed. In addition, the code | symbol part 61c1 in FIG. 10 is an inner lead part of the O terminal 61c.

  The O terminal 61c is provided so as to protrude from one side surface of the heat radiating portion 61a. More specifically, as shown in FIG. 10, the O terminal 61c is provided on a side surface (in this case, a side surface adjacent to the side surface facing the heat radiation portion 51a) other than the side surface facing the heat radiation portion 51a in the heat radiation portion 61a. ing. Preferably, the O terminal 61c is provided at a portion closest to the heat radiating portion 51a on this side surface. An upper and lower arm connecting portion 61b is formed in a part of the O terminal 61c. In the fourth metal body 61, the heat radiating portion 61a and the O terminal 61c are formed as an integrated body.

  FIG. 12 is a plan view of the lead frame 21 used when manufacturing the semiconductor device 110 according to the first modification. As shown in FIG. 12, the lead frame 21 includes a second metal body 51, a fourth metal body 61, an N terminal 41 c, and signal terminals 11 and 12. Therefore, the number of parts can be reduced as in the above-described embodiment. In FIG. 12, the first semiconductor element 1, the second semiconductor element 2, and the block bodies 7 and 8 are also shown for reference.

  Further, the signal terminals 11 and 12 of the semiconductor device 110 are exposed in the same direction with respect to the mold resin 10 as in the semiconductor device 100 in the above-described embodiment. Further, the P terminal 51b, the N terminal 41c, and the O terminal 61c are exposed in the same direction with respect to the mold resin 10. The P terminal 51b, the N terminal 41c, and the O terminal 61c are exposed from the opposite side of the side surface where the signal terminals 11 and 12 of the mold resin 10 are exposed.

  However, the upper and lower arm connecting portions 31b and 61b are provided on the signal terminals 11 and 12 side in the semiconductor device 100 in the above embodiment, whereas in the semiconductor device 110, the P terminal 51b, the O terminal 61c, It is provided on the N terminal 41c side.

  Therefore, the upper and lower arm connecting portion 31b and the upper and lower arm connecting portion 61b can be connected near an external member (bus bar) connected to the P terminal 5b. Therefore, the inductance of the semiconductor device 110 can be reduced.

(Modification 2)
Here, the semiconductor device 120 in Modification 2 will be described. As in the semiconductor device 120 of Modification 2 shown in FIG. 14, the upper and lower arm connection portions 32b and the upper and lower arm connection portions 62b are preferably thicker than the P terminal 52b, the N terminal 42c, and the O terminal 62c.

  Note that the semiconductor device 120 in Modification 2 has many points in common with the semiconductor device 100 in the above-described embodiment. In the semiconductor device 120 of the second modification, the same points as those of the semiconductor device 100 of the above-described embodiment are denoted by the same reference numerals in the drawings, and the description thereof is omitted. FIG. 14 corresponds to FIG. However, in order to make the contents of Modification 2 easy to understand, the P terminal 52b (inner lead portion 52b1), the N terminal 42c (inner lead portion 42c1), and the O terminal 62c (inner lead portion 62c1) are indicated by a one-dot chain line. .

  The first structure of the semiconductor device 120 mainly includes a first metal body 32, a first semiconductor element 1, and a second metal body 52. On the other hand, the second structure of the semiconductor device 120 mainly includes a third metal body 42, a second semiconductor element 2, and a fourth metal body 62.

  The first metal body 32 includes a heat dissipating part 32a (similar to the heat dissipating part 3a) and an upper and lower arm connecting part 32b that is thicker than the P terminal 52b, the N terminal 42c, and the O terminal 62c. The upper and lower arm connecting portion 32b is the same as the upper and lower arm connecting portion 3b described above except that the thickness is larger than that of the P terminal 52b and the like. Further, the first metal body 32 may be one in which the heat dissipating part 32a and the upper and lower arm connecting part 32b are formed as a single body, or the heat dissipating part 32a and the upper and lower arm connecting part 32b that are separately formed. It may be formed by being connected (welded).

  The fourth metal body 62 includes a heat radiating portion 62a and upper and lower arm connecting portions 62b that are thicker than the P terminal 52b, the N terminal 42c, and the O terminal 62c. The upper and lower arm connecting portion 62b is the same as the upper and lower arm connecting portion 6b described above except that the thickness is thicker than the P terminal 52b and the like. The fourth metal body 62 may be formed by integrating the heat dissipating part 62a and the upper and lower arm connecting part 62b, or the heat dissipating part 62a and the upper and lower arm connecting part 62b formed separately may be provided. It may be formed by being connected (welded).

  The second metal body 52 is the same as the second metal body 5 in the above-described embodiment, although the reference numeral is different. Therefore, the second metal body 52 includes a heat radiating portion 52a (similar to the heat radiating portion 5a) and a P terminal 52b (similar to the P terminal 5b).

  The third metal body 42 is the same as the third metal body 4 in the above-described embodiment, although the reference numeral is different. Therefore, the third metal body 42 includes a heat radiation part 42a (similar to the heat radiation part 4a) and a terminal connection part (similar to the terminal connection part 4b) (not shown). In addition, the semiconductor device 130 includes an N terminal (similar to the N terminal 4c), similar to the semiconductor device 100 in the above-described embodiment.

  By doing so, the cross-sectional area of the upper and lower arm connection portion 32b and the upper and lower arm connection portion 62b are cut off as compared with the case where the upper and lower arm connection portion 32b and the upper and lower arm connection portion 62b are thinner than the P terminal 52b. The area can be increased. Therefore, it is preferable because the inductance of the semiconductor device 120 can be made smaller than when the upper and lower arm connecting portions 32b and the upper and lower arm connecting portions 62b are thinner than the P terminal 52b or the like.

  Moreover, by doing in this way, the upper and lower arm connection part 32b and the upper and lower arm connection part 62b are warped more than the case where the thickness of the upper and lower arm connection part 32b and the upper and lower arm connection part 62b is thinner than the P terminal 52b. This can be suppressed, and the tolerance at the time of connecting the upper and lower arm connecting portion 32b and the upper and lower arm connecting portion 62b can be reduced.

(Modification 3)
Here, the semiconductor device 130 in Modification 3 will be described. In the semiconductor device 100 of the above-described embodiment, the upper and lower arm connecting portions 3b and the upper and lower arm connecting portions 6b are thinner than the heat radiating portions 3a to 6a, but the present invention is limited to this. Is not to be done.

  As in the semiconductor device 130 of the third modification shown in FIG. 15, the thickness of one of the upper and lower arm connecting portions 33b and the upper and lower arm connecting portions 63b is equal to the thickness of the heat radiating portions 33a, 53a, 43a and 63a. The other thickness of 33b and the upper and lower arm connecting portion 63b may be smaller than the thickness of the heat radiating portions 33a, 53a, 43a, 63a. Here, an example is adopted in which the thickness of the upper and lower arm connecting portion 63b is equal to the thickness of the heat radiating portions 33a, 53a, 43a and 63a, and the thickness of the upper and lower arm connecting portion 33b is thinner than the thickness of the heat radiating portions 33a, 53a, 43a and 63a. doing.

  Note that the semiconductor device 130 in Modification 3 has many points in common with the semiconductor device 100 in the above-described embodiment. In the semiconductor device 130 of the third modification, the same points as those of the semiconductor device 100 of the above-described embodiment are denoted by the same reference numerals in the drawings, and the description thereof is omitted. FIG. 15 corresponds to FIG.

  The first structure of the semiconductor device 130 mainly includes a first metal body 33, a first semiconductor element 1, and a second metal body 53. On the other hand, the second structure of the semiconductor device 140 mainly includes the third metal body 43, the second semiconductor element 2, and the fourth metal body 63.

  The fourth metal body 63 includes a heat radiating portion 63a, an upper and lower arm connecting portion 63b having a thickness equivalent to that of the heat radiating portion 63a, and an O terminal (not shown) (similar to the O terminal 6c). The fourth metal body 63 may be one in which the heat dissipating part 32a and the upper and lower arm connecting part 63b are formed as a single body, or the heat dissipating part 63a and the upper and lower arm connecting part 63b that are separately formed. It may be formed by being connected (welded).

  The first metal body 33 is the same as the first metal body 3 in the above-described embodiment, although the reference numeral is different. Therefore, the first metal body 33 includes a heat radiating portion 33a (similar to the heat radiating portion 3a) and an upper and lower arm connecting portion 33b (similar to the upper and lower arm connecting portion 3b).

  The second metal body 53 is the same as the second metal body 5 in the above-described embodiment, although the reference numeral is different. Therefore, the second metal body 53 includes a heat radiating part 53a (similar to the heat radiating part 5a) and a P terminal (similar to the P terminal 5b) not shown.

  The third metal body 43 is the same as the third metal body 4 in the above-described embodiment, although the reference numeral is different. Therefore, the third metal body 43 includes a heat radiating part 43a (similar to the heat radiating part 4a) and a terminal connecting part (similar to the terminal connecting part 4b) not shown. In addition, the semiconductor device 130 includes an N terminal (similar to the N terminal 4c), similar to the semiconductor device 100 in the above-described embodiment.

  As described above, when the thickness of at least one of the upper and lower arm connecting portion 33b and the upper and lower arm connecting portion 63b is made thinner than the heat radiating portions 33a to 63a, the upper and lower arm connecting portion 33b and the upper and lower arm connecting portion 63b can be easily formed on the mold resin 10. Can be buried.

(Modification 4)
Here, the semiconductor device 140 in Modification 4 will be described. In the semiconductor device 100 of the above-described embodiment, an example in which the block body 7 is provided between the first semiconductor element 1 and the heat radiating portion 3a and the block body 8 is provided between the second semiconductor element 2 and the heat radiating portion 4a. Although adopted, the present invention is not limited to this.

  As in the semiconductor device 140 of Modification 4 shown in FIG. 16, convex portions 34 a 1 and 44 a 1 may be provided on the heat radiating portions 34 a and 44 a instead of the block bodies 7 and 8. Note that the semiconductor device 140 in Modification 4 has many points in common with the semiconductor device 100 in the above-described embodiment. In the semiconductor device 140 according to the fourth modification, the same points as those in the semiconductor device 100 according to the above-described embodiment are denoted by the same reference numerals in the drawings, and the description thereof is omitted. FIG. 16 corresponds to FIG.

  The first structure of the semiconductor device 140 mainly includes the first metal body 34, the first semiconductor element 1, and the second metal body 54. On the other hand, the second structure of the semiconductor device 140 mainly includes the third metal body 44, the second semiconductor element 2, and the fourth metal body 64.

  The first metal body 34 includes a heat radiating portion 34a, a convex portion 34a1, and an upper and lower arm connecting portion 34b (similar to the upper and lower arm connecting portion 3b). That is, in the first metal body 34, the heat radiating portion 34a, the convex portion 34a1, and the upper and lower arm connecting portions 34b are formed as a single body. The size and shape of the convex portion 34a1 are the same as those of the block pair 7. However, the first metal body 34 is formed by connecting (welding) a member in which the heat dissipating part 34a and the convex part 34a1 are formed as one body and an upper and lower arm connecting part 34b provided separately from the member. It may be formed.

  The third metal body 44 includes a heat radiating portion 44a and a convex portion 44a1. That is, in the third metal body 44, the heat radiating portion 44a and the convex portion 44a1 are formed as an integrated body. The size and shape of the convex portion 44a1 are the same as those of the block pair 8.

  The second metal body 54 is the same as the second metal body 5 in the above-described embodiment, although the reference numeral is different. Therefore, the second metal body 54 includes a heat radiating portion 54a (similar to the heat radiating portion 5a) and a P terminal (similar to the P terminal 5b) not shown. The fourth metal body 64 is the same as the fourth metal body 6 in the above-described embodiment, although the reference numeral is different. Therefore, the fourth metal body 64 includes a heat radiating part 64a (similar to the heat radiating part 6a), an upper and lower arm connecting part 64b (similar to the upper and lower arm connecting part 6b), and an O terminal (similar to the O terminal 6c) not shown. In addition, the semiconductor device 140 includes an N terminal (similar to the N terminal 4c) similarly to the semiconductor device 100 in the above-described embodiment.

  As described above, by adopting the first metal body 34 including the convex portions 34a1 and the third metal body 44 including the convex portions 44a1, the block bodies 7 and 8 are not separately required, so that the components of the semiconductor device 140 This is preferable because the number of

(Modification 5)
Here, the semiconductor device 150 in Modification 5 will be described. 17 and 18, the block 7 and the heat radiating portion 3a, the block body 8 and the heat radiating portion 4a, the upper and lower arm connecting portion 3b and the upper and lower arm connecting portion 6b, and the N terminal 4c The terminal connection portion 4b may be connected by conductive connection members 91e, 91f, 91g, 91h made of the same material.

  Note that the semiconductor device 150 in Modification 5 has many points in common with the semiconductor device 100 in the above-described embodiment. In the semiconductor device 150 according to the fifth modification, the same points as those in the semiconductor device 100 according to the above-described embodiment are denoted by the same reference numerals in the drawings and the description thereof is omitted. FIG. 17 corresponds to FIG. In the plan view of FIG. 17, in order to make the contents of the modified example 5 easy to understand, the conductive connection members 91 e, 91 f, 91 g and 91 h that are originally hidden in the mold resin 10 and the like are indicated by hatching. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG.

  By doing in this way, the block body 7 and the heat radiating part 3a, the block body 8 and the heat radiating part 4a, the upper and lower arm connecting part 3b and the upper and lower arm connecting part 6b, and the N terminal 4c and the terminal connecting part 4b can be connected simultaneously. it can. If such a plurality of locations are connected separately, stress may be applied to the previously connected location when another location is connected later, and connection reliability may be reduced. However, by connecting simultaneously, there is a low possibility that stress is applied to the connection location, and a decrease in connection reliability can be suppressed. For example, when the N terminal 4c and the heat radiation part 4a are integrated, at least the block body 7 and the heat radiation part 3a, the block body 8 and the heat radiation part 4a, the upper and lower arm connection part 3b, and the upper and lower arm connection part 6b. As long as they are connected by conductive connection members 91e, 91f, 91g made of the same material.

(Modification 6)
Here, the semiconductor device 160 in Modification 6 will be described. In the semiconductor device 100 of the above-mentioned embodiment, the example using RC-IGBT as the first semiconductor element 1 and the second semiconductor element 2 is adopted, but the present invention is not limited to this. In other words, although an example in which one semiconductor element is included in the first structure and one semiconductor element is included in the second structure is adopted, the present invention is not limited to this.

  As in the semiconductor device 160 of Modification 6 shown in FIG. 19, the first structure includes the first circuit element 1 a in addition to the first semiconductor element 1, and the second structure adds to the second semiconductor element 2. The second circuit element 2a may be provided. Note that the semiconductor device 160 in Modification 6 has many points in common with the semiconductor device 100 in the above-described embodiment. In the semiconductor device 160 of the sixth modification, the points common to the semiconductor device 100 of the above-described embodiment are given the same reference numerals in the drawings, and the description thereof is omitted.

  As the 1st semiconductor element 1 and the 2nd semiconductor element 2 in this modification 6, IGBT is employ | adopted, for example. On the other hand, as the first circuit element 1a and the second circuit element 2a in the modified example 6, for example, diodes are employed. That is, the first semiconductor element 1 and the first circuit element 1a in Modification 6 form a circuit equivalent to the first semiconductor element 1 in the above-described embodiment. Similarly, the second semiconductor element 2 and the second circuit element 2a in Modification 6 form a circuit equivalent to the second semiconductor element 2 in the above-described embodiment.

  The first structural body of the semiconductor device 160 mainly includes a block body 7a provided between the first circuit element 1a and the heat radiation portion 3a in addition to the first semiconductor element 1 and the first circuit element 1a. Similarly, the second structural body of the semiconductor device 160 mainly includes a block body 8a provided between the second circuit element 2a and the heat radiation portion 4a in addition to the second semiconductor element 2 and the second circuit element 2a. Is provided.

  Thus, the semiconductor device of the present invention can achieve the object even if the first structure includes the semiconductor element and the circuit element and the second structure includes the semiconductor element and the circuit element. The semiconductor device of the present invention can achieve the object even if the first structure includes a plurality of semiconductor elements and the second structure includes a plurality of semiconductor elements.

  In addition, although embodiment described so far and the modification 1-the modification 6 can be implemented independently, it is also possible to implement it combining suitably.

  DESCRIPTION OF SYMBOLS 1 1st semiconductor element, 2 2nd semiconductor element, 3 1st metal body, 3a Heat radiation part, 3b Vertical arm connection part (1st connection part), 4 3rd metal body, 4a Heat radiation part, 4b Terminal connection part, 4c Main current terminal (N terminal), 4c1 Inner lead part, 5 Second metal body, 5a Heat radiation part, 5b Main current terminal (P terminal), 5b1 Inner lead part, 6 Fourth metal body, 6a Heat radiation part, 6b Vertical arm Connection part (second connection part), 6c Main current terminal (O terminal), 6c1 Inner lead part, 7, 8 Block body, 9a-9g Conductive connection member, 10 Mold resin, 11, 12 Signal terminal, 11a, 12a Inner lead part, 13, 14 Bonding wire, 20 Lead frame, 100-160 Semiconductor device

Claims (9)

A semiconductor device in which a first semiconductor element (1) having electrodes on both sides and a second semiconductor element (2) having electrodes on both sides are connected in series,
Said first semiconductor element (1);
While sandwiching the first semiconductor element (1), a pair of heat radiating portions (made of metal, each connected to each electrode of the first semiconductor element (1) and functioning as a heat radiating member of the first semiconductor element (1)) 3a, 5a)
A first structure having a first connection part (3b) made of metal provided protruding from one heat dissipation part (3a) in the pair of heat dissipation parts (3a, 5a);
Said second semiconductor element (2);
While sandwiching the second semiconductor element (2), a pair of heat dissipating parts made of metal connected to the respective electrodes of the second semiconductor element (2) and functioning as heat dissipating members of the second semiconductor element (2) ( 4a, 6a)
A second structure having a second connection part (6b) made of metal provided protruding from one heat dissipation part (6a) in the pair of heat dissipation parts (4a, 6a);
A mold resin (10) that integrally molds the first structure and the second structure;
Said 1st structure and said 2nd structure are the lamination direction of said 1st semiconductor element (1) and a pair of said heat dissipation part (3a, 5a), said 2nd semiconductor element (2), and a pair of The stacking direction with the heat dissipating part (4a, 6a) is arranged in parallel, and one side part of the pair of heat dissipating parts (3a, 5a) is connected to each other and a virtual plane along the stacking direction and the pair of heat dissipating The one side part in a part (4a, 6a) is connected and the virtual plane which follows a lamination direction is arranged facing,
The first connection portion (3b) and the second connection portion (6b) are electrically connected outside the region sandwiched between the virtual planes of the first structure and the second structure, and A semiconductor device embedded in the mold resin (10). A first block body (7) made of metal provided between one electrode of the first semiconductor element (1) and the heat dissipating part (3a);
A second block body (8) made of a metal provided between one electrode of the second semiconductor element (2) and the heat dissipation part (4a),
The first block body (7) and the heat dissipation part (3a), the second block body (8) and the heat dissipation part (4a), the first connection part (3b) and the second connection part (6b). Are connected by conductive connection members (91e, 91f, 91g) made of the same material.   The thickness of at least one of said 1st connection part (33b) and said 2nd connection part (63b) is thinner than the said thermal radiation part (33a, 53a, 43a, 63a), The Claim 1 or 2 characterized by the above-mentioned. The semiconductor device described. A first external part made of metal and connected to one heat dissipating part (5a) of the pair of heat dissipating parts (3a, 5a) and partly exposed to the outside of the mold resin (10) A connection terminal (5b);
A second external part made of metal and connected to one heat dissipating part (4a) of the pair of heat dissipating parts (4a, 6a) and partly exposed to the outside of the mold resin (10) A connection terminal (4c);
A third external body made of metal, connected to one heat radiating portion (6a) of the pair of heat radiating portions (4a, 6a) and partially exposed to the outside of the mold resin (10). The semiconductor device according to claim 1, further comprising a connection terminal.   The thickness of the first connection part (32b) and the second connection part (62b) is such that the first external connection terminal (52b), the second external connection terminal (42c), and the third external connection terminal (62c). The semiconductor device according to claim 4, wherein the semiconductor device is thicker.   6. The semiconductor device according to claim 4, wherein the second connection portion (61b) is provided in a part of the third external connection terminal (61c). It is made of metal and is connected to the first semiconductor element (1) without passing through the pair of heat radiating portions (3a, 5a), and a part thereof is exposed to the outside of the mold resin (10). A fourth external connection terminal (11),
It is made of metal and is connected to the second semiconductor element (2) without going through the pair of heat radiating portions (4a, 6a), and a part thereof is exposed to the outside of the mold resin (10). A fifth external connection terminal (12),
The fourth external connection terminal (11) and the fifth external connection terminal (12) are exposed in the same direction from the mold resin (10), and one side portion of the fourth external connection terminal (11) is formed. A virtual plane along the stacking direction and a virtual plane along the stacking direction passing through one side of the fifth external connection terminal (12) are arranged to face each other.
The first connection part (3b) and the second connection part (6b) are regions sandwiched between virtual planes of the fourth external connection terminal (11) and the fifth external connection terminal (12). The semiconductor device according to claim 4, wherein the semiconductor devices are connected with each other.   One heat radiating part (3a) in the pair of heat radiating parts (3a, 5a) and one heat radiating part (4a) in the pair of heat radiating parts (4a, 6a) have the same shape. The semiconductor device according to claim 1. A method for manufacturing a semiconductor device according to claim 1, wherein:
Mounting the first semiconductor element (1) and the second semiconductor element (2) on a lead frame (20) including the heat radiating part (5a) and the heat radiating part (6a); (5a) and mounting so that one electrode in said 1st semiconductor element (1) opposes and said heat dissipation part (6a) and one electrode in said 2nd semiconductor element (2) oppose Process,
Attaching the heat dissipating part (3a) on the other electrode of the first semiconductor element (1) and attaching the heat dissipating part (4a) on the other electrode of the second semiconductor element (2);
A connection step of electrically connecting the first connection portion (3b) and the second connection portion (6b);
The first semiconductor element (1) is sandwiched between a pair of the heat dissipation portions (3a, 5a), the second semiconductor element (2) is sandwiched between the pair of heat dissipation portions (4a, 6a), and the first In a state where the connection part (3b) and the second connection part (6b) are electrically connected, while exposing the heat radiation surfaces of the heat radiation part (3a, 5a) and the heat radiation part (4a, 6a), A molding step of collectively molding the first structure including the first connection portion (3b) and the second structure including the second connection portion (6b);
A method for manufacturing a semiconductor device, comprising:

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