JP5728385B2 - 溶融物からのシート製造方法及びシート製造装置 - Google Patents
溶融物からのシート製造方法及びシート製造装置 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 27
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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Description
Claims (19)
- 材料の溶融物を、該溶融物の凝固温度未満の温度に設定されるとともに該溶融物の表面に近接して配置される冷却プレートの放射冷却によって冷却するステップと、
前記溶融物内に前記材料の固体のシートを形成するステップと、
前記シートを移送するステップと、
前記シートを少なくとも1つのセグメントに切断するステップと、
前記セグメントを冷却するステップと、
を含むことを特徴とする方法。 - 前記材料がシリコン、シリコンゲルマニウム、ガリウム、および窒化ガリウムからなる群より選択されることを特徴とする請求項1に記載の方法。
- スピルウェイを用いて、前記シートを前記溶融物から分離するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記セグメントを冷却するステップはガスを用いたガス冷却であることを特徴とする請求項1に記載の方法。
- 前記セグメントを冷却するステップは、前記セグメントの表面にわたる方向の温度を均一に保ちつつ、時間とともに前記セグメントの温度を低下させることを特徴とする請求項1に記載の方法。
- 前記セグメントを冷却するステップは前記セグメントの厚みを横切る横断方向に行われることを特徴とする請求項5に記載の方法。
- 材料の溶融物を保持するよう構成された溝を画定する容器と、
前記溶融物に近接して配置された冷却プレートであって、該溶融物の凝固温度未満の温度に設定された該冷却プレートの放射冷却によって前記溶融物上に前記材料のシートを形成するよう構成された冷却プレートと、
前記シートを切断して、少なくとも1つのセグメントにするよう構成された切断装置と、
前記セグメントを保持するよう構成された冷却室と、
を備え、
前記冷却室および前記セグメントが、前記セグメントの表面にわたって均一な温度になるよう構成されたことを特徴とする装置。 - 前記材料がシリコン、シリコンゲルマニウム、ガリウム、および窒化ガリウムからなる群より選択されることを特徴とする請求項7に記載の装置。
- 前記冷却室が冷却機構を有することを特徴とする請求項7に記載の装置。
- 前記冷却機構が複数の導管および1つのガス源を有することを特徴とする請求項9に記載の装置。
- 前記冷却室が少なくとも1つの多孔質材料を有することを特徴とする請求項9に記載の装置。
- 前記多孔質材料と流体連通する複数の導管および1つのガス源をさらに有することを特徴とする請求項11に記載の装置。
- 前記冷却室は前記均一な温度を時間とともに変えるよう構成されることを特徴とする請求項7に記載の装置。
- 前記均一な温度を室温まで低下させることを特徴とする請求項13に記載の装置。
- 前記冷却室および前記セグメントは、前記セグメントの前記表面にわたる方向の熱勾配を生じることなく冷却されることを特徴とする請求項13に記載の装置。
- 材料の溶融物を保持するよう構成された溝を画定する容器と、
前記溶融物に近接して配置された冷却プレートであって、該溶融物の凝固温度未満の温度に設定された該冷却プレートの放射冷却によって前記溶融物上に前記材料のシートを形成するよう構成された冷却プレートと、
前記シートを切断して、少なくとも1つのセグメントにするよう構成された切断装置と、
前記セグメントを保持するよう構成された冷却室と、
を備え、
前記セグメントが、前記冷却室内で冷却されることを特徴とする装置。 - 前記材料がシリコン、シリコンゲルマニウム、ガリウム、および窒化ガリウムからなる群より選択されることを特徴とする請求項16に記載の装置。
- 前記冷却室が前記セグメントの上および下に配置される複数の隔壁を有し、前記隔壁は、前記セグメントの厚みを横切る横断方向よりも、前記セグメントの表面に渡る方向に、大きい異方性の熱伝導率をもつことを特徴とする請求項16に記載の装置。
- 前記冷却プレートが熱分解グラファイトからなることを特徴とする請求項16に記載の装置。
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US10714308P | 2008-10-21 | 2008-10-21 | |
US61/107,143 | 2008-10-21 | ||
US12/580,719 US7998224B2 (en) | 2008-10-21 | 2009-10-16 | Removal of a sheet from a production apparatus |
US12/580,719 | 2009-10-16 | ||
PCT/US2009/061280 WO2010051184A2 (en) | 2008-10-21 | 2009-10-20 | Removal of a sheet from a production apparatus |
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JP (1) | JP5728385B2 (ja) |
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CN107217296B (zh) * | 2017-04-28 | 2019-05-07 | 常州大学 | 一种硅片水平生长设备和方法 |
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