JP5717612B2 - 処理装置及び処理方法 - Google Patents

処理装置及び処理方法 Download PDF

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Publication number
JP5717612B2
JP5717612B2 JP2011254773A JP2011254773A JP5717612B2 JP 5717612 B2 JP5717612 B2 JP 5717612B2 JP 2011254773 A JP2011254773 A JP 2011254773A JP 2011254773 A JP2011254773 A JP 2011254773A JP 5717612 B2 JP5717612 B2 JP 5717612B2
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roic
current
time period
unit cells
circuit
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Japanese (ja)
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JP2012114439A5 (https=
JP2012114439A (ja
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ダブリュ グラハム ロジャー
ダブリュ グラハム ロジャー
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Raytheon Co
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Raytheon Co
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J1/46—Electric circuits using a capacitor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2011254773A 2010-11-23 2011-11-22 処理装置及び処理方法 Active JP5717612B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/952,282 2010-11-23
US12/952,282 US8415623B2 (en) 2010-11-23 2010-11-23 Processing detector array signals using stacked readout integrated circuits

Publications (3)

Publication Number Publication Date
JP2012114439A JP2012114439A (ja) 2012-06-14
JP2012114439A5 JP2012114439A5 (https=) 2014-01-23
JP5717612B2 true JP5717612B2 (ja) 2015-05-13

Family

ID=45094482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011254773A Active JP5717612B2 (ja) 2010-11-23 2011-11-22 処理装置及び処理方法

Country Status (5)

Country Link
US (1) US8415623B2 (https=)
EP (1) EP2456193B1 (https=)
JP (1) JP5717612B2 (https=)
IL (1) IL216363A (https=)
TW (1) TWI531242B (https=)

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US8773562B1 (en) 2013-01-31 2014-07-08 Apple Inc. Vertically stacked image sensor
US9110136B2 (en) 2013-09-27 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit and method for monolithic stacked integrated circuit testing
US20180376044A1 (en) * 2017-06-22 2018-12-27 Robert Bosch Gmbh Device Having A CMOS VL and IR Imaging System
US10883804B2 (en) * 2017-12-22 2021-01-05 Ams Sensors Uk Limited Infra-red device
US20200344426A1 (en) * 2019-04-15 2020-10-29 Owl Autonomous Imaging, Inc. Thermal ranging devices and methods
US12185018B2 (en) 2019-06-28 2024-12-31 Apple Inc. Stacked electromagnetic radiation sensors for visible image sensing and infrared depth sensing, or for visible image sensing and infrared image sensing
US12464263B2 (en) 2023-04-26 2025-11-04 Bae Systems Information And Electronic Systems Integration Inc. Programmable event output pixel

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US5512750A (en) * 1994-06-03 1996-04-30 Martin Marietta Corporation A-dual band IR sensor having two monolithically integrated staring detector arrays for simultaneous, coincident image readout
WO1997017800A1 (en) 1995-11-07 1997-05-15 California Institute Of Technology An image sensor with high dynamic range linear output
US5892541A (en) 1996-09-10 1999-04-06 Foveonics, Inc. Imaging system and method for increasing the dynamic range of an array of active pixel sensor cells
FR2759494B1 (fr) * 1997-02-07 1999-03-05 Commissariat Energie Atomique Detecteur de rayonnement photonique multicolore
US6493030B1 (en) 1998-04-08 2002-12-10 Pictos Technologies, Inc. Low-noise active pixel sensor for imaging arrays with global reset
US6078037A (en) 1998-04-16 2000-06-20 Intel Corporation Active pixel CMOS sensor with multiple storage capacitors
US6875975B2 (en) * 1999-12-24 2005-04-05 Bae Systems Information And Electronic Systems Integration Inc Multi-color, multi-focal plane optical detector
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
US6504141B1 (en) 2000-09-29 2003-01-07 Rockwell Science Center, Llc Adaptive amplifier circuit with enhanced dynamic range
US6924841B2 (en) 2001-05-02 2005-08-02 Agilent Technologies, Inc. System and method for capturing color images that extends the dynamic range of an image sensor using first and second groups of pixels
US6885002B1 (en) 2001-08-31 2005-04-26 Raytheon Company IRFPA ROIC with dual TDM reset integrators and sub-frame averaging functions per unit cell
US6864965B2 (en) * 2002-03-12 2005-03-08 Bae Systems Information And Electronic Systems Integration Inc. Dual-mode focal plane array for missile seekers
US20060055800A1 (en) * 2002-12-18 2006-03-16 Noble Device Technologies Corp. Adaptive solid state image sensor
US7586074B2 (en) 2003-02-17 2009-09-08 Raytheon Company Multi-mode high capacity dual integration direct injection detector input circuit
US7492399B1 (en) * 2004-02-17 2009-02-17 Raytheon Company High dynamic range dual mode charge transimpedance amplifier/source follower per detector input circuit
US7091531B2 (en) 2004-04-07 2006-08-15 Micron Technology, Inc. High dynamic range pixel amplifier
US7723815B1 (en) * 2004-07-09 2010-05-25 Raytheon Company Wafer bonded composite structure for thermally matching a readout circuit (ROIC) and an infrared detector chip both during and after hybridization
JP3976754B2 (ja) 2004-07-13 2007-09-19 マイクロン テクノロジー，インコーポレイテッド 選択読取りによる広ダイナミックレンジ撮像デバイス
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US20070102622A1 (en) 2005-07-01 2007-05-10 Olsen Richard I Apparatus for multiple camera devices and method of operating same
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US7616243B2 (en) 2007-03-07 2009-11-10 Altasens, Inc. Method and apparatus for improving and controlling dynamic range in an image sensor
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Also Published As

Publication number Publication date
EP2456193B1 (en) 2020-07-08
JP2012114439A (ja) 2012-06-14
EP2456193A3 (en) 2014-08-20
EP2456193A2 (en) 2012-05-23
US8415623B2 (en) 2013-04-09
IL216363A (en) 2016-10-31
IL216363A0 (en) 2012-02-29
US20120126121A1 (en) 2012-05-24
TWI531242B (zh) 2016-04-21
TW201230795A (en) 2012-07-16

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