JP5701602B2 - ウエハーを検査するように構成される装置 - Google Patents

ウエハーを検査するように構成される装置 Download PDF

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Publication number
JP5701602B2
JP5701602B2 JP2010519994A JP2010519994A JP5701602B2 JP 5701602 B2 JP5701602 B2 JP 5701602B2 JP 2010519994 A JP2010519994 A JP 2010519994A JP 2010519994 A JP2010519994 A JP 2010519994A JP 5701602 B2 JP5701602 B2 JP 5701602B2
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wafer
light
different points
optical element
subsystem
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Japanese (ja)
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JP2010536034A (ja
JP2010536034A5 (https=
Inventor
カドクリー・アズミ
ビエラク・スティーブン
バエズ−イラバニ・メヘディ
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2010519994A 2007-08-10 2008-08-11 ウエハーを検査するように構成される装置 Active JP5701602B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/837,220 2007-08-10
US11/837,220 US7746459B2 (en) 2007-08-10 2007-08-10 Systems configured to inspect a wafer
PCT/US2008/009571 WO2009023154A2 (en) 2007-08-10 2008-08-11 Systems configured to inspect a wafer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014222431A Division JP6014102B2 (ja) 2007-08-10 2014-10-31 ウエハーを検査するように構成される装置

Publications (3)

Publication Number Publication Date
JP2010536034A JP2010536034A (ja) 2010-11-25
JP2010536034A5 JP2010536034A5 (https=) 2014-05-08
JP5701602B2 true JP5701602B2 (ja) 2015-04-15

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ID=40346192

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JP2010519994A Active JP5701602B2 (ja) 2007-08-10 2008-08-11 ウエハーを検査するように構成される装置
JP2014222431A Active JP6014102B2 (ja) 2007-08-10 2014-10-31 ウエハーを検査するように構成される装置

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JP2014222431A Active JP6014102B2 (ja) 2007-08-10 2014-10-31 ウエハーを検査するように構成される装置

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US (1) US7746459B2 (https=)
JP (2) JP5701602B2 (https=)
WO (1) WO2009023154A2 (https=)

Families Citing this family (10)

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US8891079B2 (en) 2010-12-16 2014-11-18 Kla-Tencor Corp. Wafer inspection
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US9404873B2 (en) * 2012-03-09 2016-08-02 Kla-Tencor Corp. Wafer inspection with multi-spot illumination and multiple channels
US9945792B2 (en) * 2012-12-19 2018-04-17 Kla-Tencor Corporation Generating an array of spots on inclined surfaces
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
EP3470924A1 (en) * 2017-10-11 2019-04-17 ASML Netherlands B.V. Method of optimizing the position and/or size of a measurement illumination spot relative to a target on a substrate, and associated apparatus
US11513085B2 (en) * 2020-02-20 2022-11-29 Kla Corporation Measurement and control of wafer tilt for x-ray based metrology
WO2022009297A1 (ja) * 2020-07-07 2022-01-13 株式会社日立ハイテク 荷電粒子線装置
CN114199884B (zh) * 2021-12-09 2023-06-13 合肥御微半导体技术有限公司 一种晶圆背检设备及其检测方法

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US5274434A (en) * 1990-04-02 1993-12-28 Hitachi, Ltd. Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line
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US6538730B2 (en) 2001-04-06 2003-03-25 Kla-Tencor Technologies Corporation Defect detection system
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JP4691499B2 (ja) 2003-05-19 2011-06-01 ケーエルエー−テンカー コーポレイション 対象となる信号およびノイズ間のロバストな分離を可能にする装置および方法
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JP2005283190A (ja) * 2004-03-29 2005-10-13 Hitachi High-Technologies Corp 異物検査方法及びその装置
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US7489393B2 (en) * 2005-03-02 2009-02-10 Kla-Tencor Technologies Corporation Enhanced simultaneous multi-spot inspection and imaging
US7728965B2 (en) 2005-06-06 2010-06-01 Kla-Tencor Technologies Corp. Systems and methods for inspecting an edge of a specimen
US7511816B2 (en) 2005-06-16 2009-03-31 Kla-Tencor Technologies Corp. Methods and systems for determining drift in a position of a light beam with respect to a chuck
US7518728B2 (en) * 2005-09-30 2009-04-14 Intel Corporation Method and instrument for collecting fourier transform (FT) Raman spectra for imaging applications
US7554656B2 (en) 2005-10-06 2009-06-30 Kla-Tencor Technologies Corp. Methods and systems for inspection of a wafer
US7372559B2 (en) 2005-12-14 2008-05-13 Kla-Tencor Technologies Corp. Systems and methods for inspecting a wafer with increased sensitivity
US7436505B2 (en) 2006-04-04 2008-10-14 Kla-Tencor Technologies Corp. Computer-implemented methods and systems for determining a configuration for a light scattering inspection system
US7463349B1 (en) * 2006-06-02 2008-12-09 Kla-Tencor Technologies Corp. Systems and methods for determining a characteristic of a specimen

Also Published As

Publication number Publication date
JP6014102B2 (ja) 2016-10-25
JP2010536034A (ja) 2010-11-25
WO2009023154A2 (en) 2009-02-19
US7746459B2 (en) 2010-06-29
US20090040525A1 (en) 2009-02-12
JP2015062022A (ja) 2015-04-02
WO2009023154A3 (en) 2009-04-23

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