JP5701318B2 - 不感時間を無視できるシングルフォトンカウンティング読出回路 - Google Patents

不感時間を無視できるシングルフォトンカウンティング読出回路 Download PDF

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JP5701318B2
JP5701318B2 JP2012550342A JP2012550342A JP5701318B2 JP 5701318 B2 JP5701318 B2 JP 5701318B2 JP 2012550342 A JP2012550342 A JP 2012550342A JP 2012550342 A JP2012550342 A JP 2012550342A JP 5701318 B2 JP5701318 B2 JP 5701318B2
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pixel
counter
single photon
photon counting
signal
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JP2013518489A (ja
JP2013518489A5 (enExample
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ディナポリ ロベルト
ディナポリ ロベルト
ハインリヒ ベアト
ハインリヒ ベアト
ホリスベアガー ローラント
ホリスベアガー ローラント
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Scherrer Paul Institut
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Scherrer Paul Institut
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/243—Modular detectors, e.g. arrays formed from self contained units
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2012550342A 2010-01-26 2010-12-09 不感時間を無視できるシングルフォトンカウンティング読出回路 Expired - Fee Related JP5701318B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10151685A EP2348704A1 (en) 2010-01-26 2010-01-26 A single photon counting readout chip with neglibible dead time
EP10151685.4 2010-01-26
PCT/EP2010/069265 WO2011091896A1 (en) 2010-01-26 2010-12-09 A single photon counting readout chip with negligible dead time

Publications (3)

Publication Number Publication Date
JP2013518489A JP2013518489A (ja) 2013-05-20
JP2013518489A5 JP2013518489A5 (enExample) 2014-01-30
JP5701318B2 true JP5701318B2 (ja) 2015-04-15

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JP2012550342A Expired - Fee Related JP5701318B2 (ja) 2010-01-26 2010-12-09 不感時間を無視できるシングルフォトンカウンティング読出回路

Country Status (5)

Country Link
US (1) US8766198B2 (enExample)
EP (2) EP2348704A1 (enExample)
JP (1) JP5701318B2 (enExample)
AU (1) AU2010344046B2 (enExample)
WO (1) WO2011091896A1 (enExample)

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KR102755024B1 (ko) * 2022-10-19 2025-01-21 주식회사 레이언스 엑스선 디텍터

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EP2490441A1 (en) * 2011-02-16 2012-08-22 Paul Scherrer Institut Single photon counting detector system having improved counter architecture
US8680474B2 (en) * 2012-03-02 2014-03-25 Luxen Technologies, Inc. Parallel readout integrated circuit architecture for X-ray image sensor
US9101273B2 (en) * 2012-06-22 2015-08-11 Kabushiki Kaisha Toshiba Apparatus, detector, and method for applying a pixel by pixel bias on demand in energy discriminating computed tomography (CT) imaging
JP6108936B2 (ja) * 2013-04-24 2017-04-05 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
EP2871496B1 (en) 2013-11-12 2020-01-01 Samsung Electronics Co., Ltd Radiation detector and computed tomography apparatus using the same
US10084983B2 (en) * 2014-04-29 2018-09-25 Fermi Research Alliance, Llc Wafer-scale pixelated detector system
US9948874B2 (en) * 2015-05-19 2018-04-17 Magic Leap, Inc. Semi-global shutter imager
US10098595B2 (en) * 2015-08-06 2018-10-16 Texas Instruments Incorporated Low power photon counting system
US10117626B2 (en) * 2015-09-29 2018-11-06 General Electric Company Apparatus and method for pile-up correction in photon-counting detector
CN106092339A (zh) * 2016-06-01 2016-11-09 南京邮电大学 一种用于单光子探测器的模拟计数电路
WO2019019047A1 (en) 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. RADIATION DETECTOR AND METHODS OF PRODUCING DATA THEREFROM
US10151845B1 (en) 2017-08-02 2018-12-11 Texas Instruments Incorporated Configurable analog-to-digital converter and processing for photon counting
CN108254087B (zh) * 2017-12-28 2021-05-21 国家电网有限公司 一种单光子探测器系统及控制方法
WO2019195244A1 (en) * 2018-04-02 2019-10-10 Rensselaer Polytechnic Institute Cross-connect switch architecture
US10890674B2 (en) 2019-01-15 2021-01-12 Texas Instruments Incorporated Dynamic noise shaping in a photon counting system
CN111522055B (zh) * 2020-06-04 2024-09-06 中国工程物理研究院激光聚变研究中心 一种离子信号在线探测记录系统
CN118158339B (zh) * 2024-05-10 2024-07-30 中国科学技术大学先进技术研究院 像素芯片的数据采集方法、系统、设备、介质及产品

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US5475225A (en) * 1989-03-17 1995-12-12 Advanced Scientific Concepts Inc. Autoradiographic digital imager
US5665959A (en) * 1995-01-13 1997-09-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration Solid-state image sensor with focal-plane digital photon-counting pixel array
US6121622A (en) * 1995-07-14 2000-09-19 Yeda Research And Development Co., Ltd. Imager or particle detector and method of manufacturing the same
US6362484B1 (en) * 1995-07-14 2002-03-26 Imec Vzw Imager or particle or radiation detector and method of manufacturing the same
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Publication number Priority date Publication date Assignee Title
KR102755024B1 (ko) * 2022-10-19 2025-01-21 주식회사 레이언스 엑스선 디텍터

Also Published As

Publication number Publication date
AU2010344046A1 (en) 2012-07-12
EP2529545A1 (en) 2012-12-05
US20120298877A1 (en) 2012-11-29
EP2529545B1 (en) 2019-05-08
AU2010344046B2 (en) 2015-03-12
JP2013518489A (ja) 2013-05-20
WO2011091896A1 (en) 2011-08-04
US8766198B2 (en) 2014-07-01
EP2348704A1 (en) 2011-07-27

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