AU2010344046B2 - A single photon counting readout chip with negligible dead time - Google Patents

A single photon counting readout chip with negligible dead time Download PDF

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Publication number
AU2010344046B2
AU2010344046B2 AU2010344046A AU2010344046A AU2010344046B2 AU 2010344046 B2 AU2010344046 B2 AU 2010344046B2 AU 2010344046 A AU2010344046 A AU 2010344046A AU 2010344046 A AU2010344046 A AU 2010344046A AU 2010344046 B2 AU2010344046 B2 AU 2010344046B2
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AU
Australia
Prior art keywords
counter
pixel
nibble
single photon
photon counting
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Ceased
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AU2010344046A
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English (en)
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AU2010344046A1 (en
Inventor
Roberto Dinapoli
Beat Henrich
Roland Horisberger
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Scherrer Paul Institut
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Scherrer Paul Institut
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Publication of AU2010344046A1 publication Critical patent/AU2010344046A1/en
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/243—Modular detectors, e.g. arrays formed from self contained units
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AU2010344046A 2010-01-26 2010-12-09 A single photon counting readout chip with negligible dead time Ceased AU2010344046B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10151685A EP2348704A1 (en) 2010-01-26 2010-01-26 A single photon counting readout chip with neglibible dead time
EP10151685.4 2010-01-26
PCT/EP2010/069265 WO2011091896A1 (en) 2010-01-26 2010-12-09 A single photon counting readout chip with negligible dead time

Publications (2)

Publication Number Publication Date
AU2010344046A1 AU2010344046A1 (en) 2012-07-12
AU2010344046B2 true AU2010344046B2 (en) 2015-03-12

Family

ID=42199005

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2010344046A Ceased AU2010344046B2 (en) 2010-01-26 2010-12-09 A single photon counting readout chip with negligible dead time

Country Status (5)

Country Link
US (1) US8766198B2 (enExample)
EP (2) EP2348704A1 (enExample)
JP (1) JP5701318B2 (enExample)
AU (1) AU2010344046B2 (enExample)
WO (1) WO2011091896A1 (enExample)

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EP2490441A1 (en) * 2011-02-16 2012-08-22 Paul Scherrer Institut Single photon counting detector system having improved counter architecture
US8680474B2 (en) * 2012-03-02 2014-03-25 Luxen Technologies, Inc. Parallel readout integrated circuit architecture for X-ray image sensor
US9101273B2 (en) * 2012-06-22 2015-08-11 Kabushiki Kaisha Toshiba Apparatus, detector, and method for applying a pixel by pixel bias on demand in energy discriminating computed tomography (CT) imaging
JP6108936B2 (ja) * 2013-04-24 2017-04-05 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
EP2871496B1 (en) 2013-11-12 2020-01-01 Samsung Electronics Co., Ltd Radiation detector and computed tomography apparatus using the same
US10084983B2 (en) * 2014-04-29 2018-09-25 Fermi Research Alliance, Llc Wafer-scale pixelated detector system
US9948874B2 (en) * 2015-05-19 2018-04-17 Magic Leap, Inc. Semi-global shutter imager
US10098595B2 (en) * 2015-08-06 2018-10-16 Texas Instruments Incorporated Low power photon counting system
US10117626B2 (en) * 2015-09-29 2018-11-06 General Electric Company Apparatus and method for pile-up correction in photon-counting detector
CN106092339A (zh) * 2016-06-01 2016-11-09 南京邮电大学 一种用于单光子探测器的模拟计数电路
WO2019019047A1 (en) 2017-07-26 2019-01-31 Shenzhen Xpectvision Technology Co., Ltd. RADIATION DETECTOR AND METHODS OF PRODUCING DATA THEREFROM
US10151845B1 (en) 2017-08-02 2018-12-11 Texas Instruments Incorporated Configurable analog-to-digital converter and processing for photon counting
CN108254087B (zh) * 2017-12-28 2021-05-21 国家电网有限公司 一种单光子探测器系统及控制方法
WO2019195244A1 (en) * 2018-04-02 2019-10-10 Rensselaer Polytechnic Institute Cross-connect switch architecture
US10890674B2 (en) 2019-01-15 2021-01-12 Texas Instruments Incorporated Dynamic noise shaping in a photon counting system
CN111522055B (zh) * 2020-06-04 2024-09-06 中国工程物理研究院激光聚变研究中心 一种离子信号在线探测记录系统
KR102755024B1 (ko) * 2022-10-19 2025-01-21 주식회사 레이언스 엑스선 디텍터
CN118158339B (zh) * 2024-05-10 2024-07-30 中国科学技术大学先进技术研究院 像素芯片的数据采集方法、系统、设备、介质及产品

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US20060071170A1 (en) * 2003-01-10 2006-04-06 Paul Scherrer Institut Photon counting imaging device
WO2006111883A2 (en) * 2005-04-22 2006-10-26 Koninklijke Philips Electronics, N.V. Digital silicon photomultiplier for tof-pet

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US5475225A (en) * 1989-03-17 1995-12-12 Advanced Scientific Concepts Inc. Autoradiographic digital imager
US5665959A (en) * 1995-01-13 1997-09-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration Solid-state image sensor with focal-plane digital photon-counting pixel array
US6121622A (en) * 1995-07-14 2000-09-19 Yeda Research And Development Co., Ltd. Imager or particle detector and method of manufacturing the same
US6362484B1 (en) * 1995-07-14 2002-03-26 Imec Vzw Imager or particle or radiation detector and method of manufacturing the same
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US6362482B1 (en) * 1997-09-16 2002-03-26 Advanced Scientific Concepts, Inc. High data rate smart sensor technology
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US20060071170A1 (en) * 2003-01-10 2006-04-06 Paul Scherrer Institut Photon counting imaging device
WO2006111883A2 (en) * 2005-04-22 2006-10-26 Koninklijke Philips Electronics, N.V. Digital silicon photomultiplier for tof-pet

Also Published As

Publication number Publication date
JP5701318B2 (ja) 2015-04-15
AU2010344046A1 (en) 2012-07-12
EP2529545A1 (en) 2012-12-05
US20120298877A1 (en) 2012-11-29
EP2529545B1 (en) 2019-05-08
JP2013518489A (ja) 2013-05-20
WO2011091896A1 (en) 2011-08-04
US8766198B2 (en) 2014-07-01
EP2348704A1 (en) 2011-07-27

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