JP5697982B2 - 複数の変換層を持つ放射線検出器、x線検出器および画像形成システム - Google Patents
複数の変換層を持つ放射線検出器、x線検出器および画像形成システム Download PDFInfo
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- JP5697982B2 JP5697982B2 JP2010523624A JP2010523624A JP5697982B2 JP 5697982 B2 JP5697982 B2 JP 5697982B2 JP 2010523624 A JP2010523624 A JP 2010523624A JP 2010523624 A JP2010523624 A JP 2010523624A JP 5697982 B2 JP5697982 B2 JP 5697982B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 101
- 230000005855 radiation Effects 0.000 title claims description 53
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- 238000000354 decomposition reaction Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000001419 dependent effect Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000002603 single-photon emission computed tomography Methods 0.000 claims description 3
- 230000005251 gamma ray Effects 0.000 claims 1
- 230000001902 propagating effect Effects 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 claims 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 15
- 238000002591 computed tomography Methods 0.000 description 15
- 230000003595 spectral effect Effects 0.000 description 10
- 229910004613 CdTe Inorganic materials 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
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- 238000013461 design Methods 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Inorganic materials [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
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- 238000002600 positron emission tomography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007476 Maximum Likelihood Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013170 computed tomography imaging Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/249—Measuring radiation intensity with semiconductor detectors specially adapted for use in SPECT or PET
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/242—Stacked detectors, e.g. for depth information
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Description
Claims (12)
- 主放射方向に沿って伝搬するフォトンを検出するための放射線検出器であって、
a)前記フォトンに対する低減衰係数を有する少なくとも1つの主変換層、及び入射フォトンの直接変換により当該主変換層において発生される電気的パルスに対する関連のエネルギ分解計数電子回路部ERCEと、
b)GOS層及びフォトダイオードアレイを有する少なくとも1つの副変換層、及び入射フォトンの変換により当該副変換層において発生された電気信号に対する関連の読出電子回路であって、前記フォトダイオードアレイに接続された読出電子回路部と、
を有し、前記主変換層が、主放射方向に積層された複数の層を有し、前記複数の層の各層の厚さは、主放射方向に増大し、前記複数の層の各層について個別のエネルギ分解計数電子回路部ERCEが設けられ、
前記主変換層は、前記副変換層の上部に除去可能に接続されており、前記検出器の動作の間、前記主変換層が前記副変換層の前において入射フォトンと交差し、
前記主変換層の各層の寸法及び形状は、入射フォトンの所定の最大フラックスに対して、当該エネルギ分解計数電子回路部ERCEによって扱われる計数率が所定の最大計数率である10Mcps以下の計数率となるようなものである、検出器。 - 請求項1に記載の放射線検出器であって、前記主変換層の減衰係数は、20keVないし150keVのエネルギ範囲においてX線フォトン及び/又はγ線フォトンについてシリコンの減衰係数の約0.5ないし4倍に及ぶ、検出器。
- 請求項1に記載の放射線検出器であって、前記主変換層は、前記シリコンの材料を有する、検出器。
- 請求項1に記載の放射線検出器であって、前記主変換層は、20keVないし150keVのエネルギ範囲内においてK蛍光を呈しない変換材料を有する、検出器。
- 請求項1に記載の放射線検出器であって、前記主変換層は、20keVないし150keVのエネルギ範囲内において20%以下のK蛍光確率を有する変換材料を有する、検出器。
- 請求項1に記載の放射線検出器であって、前記副変換層は、前記フォトンに対し前記主変換層より高い減衰係数を有する、検出器。
- 請求項1に記載の放射線検出器であって、前記主変換層及び前記副変換層は、前記主放射方向において積層されている、検出器。
- 請求項1に記載の放射線検出器であって、前記主放射方向において積層した画素化したERCEを備えた複数の主変換層を有する検出器。
- 請求項1に記載の放射線検出器であって、前記副変換層の読出電子回路部は、エネルギ積算電子回路部である、検出器。
- 請求項1に記載の放射線検出器を有するX線検出器。
- 請求項1に記載の放射線検出器を有する、X線、CT、PET、SPECT又は放射性映像に基づく装置を含む画像形成システム。
- 請求項11に記載の画像形成システムであって、
前記フォトンが交差したオブジェクトのエネルギ依存性減衰係数を推定するために前記ERCE及び前記読出電子回路部に結合された復元器を有するシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07115967.7 | 2007-09-07 | ||
EP07115967 | 2007-09-07 | ||
PCT/IB2008/053602 WO2009031126A2 (en) | 2007-09-07 | 2008-09-05 | Radiation detector with several conversion layers |
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JP2010538293A JP2010538293A (ja) | 2010-12-09 |
JP5697982B2 true JP5697982B2 (ja) | 2015-04-08 |
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JP2010523624A Active JP5697982B2 (ja) | 2007-09-07 | 2008-09-05 | 複数の変換層を持つ放射線検出器、x線検出器および画像形成システム |
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US (1) | US8513613B2 (ja) |
EP (1) | EP2203763A2 (ja) |
JP (1) | JP5697982B2 (ja) |
CN (1) | CN101796429A (ja) |
WO (1) | WO2009031126A2 (ja) |
Families Citing this family (23)
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RU2530780C2 (ru) * | 2009-04-16 | 2014-10-10 | Конинклейке Филипс Электроникс Н.В. | Спектральное получение отображения |
JP2011164048A (ja) * | 2010-02-15 | 2011-08-25 | Yokogawa Electric Corp | 放射線測定装置 |
DE102011108876B4 (de) * | 2011-07-28 | 2018-08-16 | Technische Universität Dresden | Direktwandelnder Röntgendetektor mit Strahlenschutz für die Elektronik |
WO2013124884A1 (ja) * | 2012-02-21 | 2013-08-29 | 株式会社島津製作所 | 放射線検出器 |
EP2883083B1 (en) * | 2012-08-13 | 2019-02-13 | Koninklijke Philips N.V. | Photon counting x-ray detector |
JP2015039404A (ja) * | 2013-08-20 | 2015-03-02 | 学校法人 岩手医科大学 | X線直接変換イメージングシステム |
DE102013219821A1 (de) * | 2013-09-30 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Röntgendetektor |
JP6574419B2 (ja) * | 2013-11-15 | 2019-09-11 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | フレキシブル基板上の両面有機光検出器 |
EP3143430B1 (en) * | 2014-10-31 | 2018-01-10 | Koninklijke Philips N.V. | Sensor device and imaging system for detecting radiation signals |
US10126254B2 (en) | 2014-12-18 | 2018-11-13 | Toshiba Medical Systems Corporation | Non-uniform photon-counting detector array on a fourth-generation ring to achieve uniform noise and spectral performance in Z-direction |
CN104635254A (zh) * | 2015-01-30 | 2015-05-20 | 陕西迪泰克新材料有限公司 | 一种便携式γ辐射谱仪 |
WO2016161542A1 (en) | 2015-04-07 | 2016-10-13 | Shenzhen Xpectvision Technology Co.,Ltd. | Semiconductor x-ray detector |
CN104820233B (zh) * | 2015-05-15 | 2019-03-01 | 中国科学院高能物理研究所 | 闪烁体阵列结构及应用该闪烁体阵列结构的中子探测器 |
US10646176B2 (en) * | 2015-09-30 | 2020-05-12 | General Electric Company | Layered radiation detector |
EP3365704A1 (en) * | 2015-10-21 | 2018-08-29 | Koninklijke Philips N.V. | Radiation detector for combined detection of low-energy radiation quanta and high-energy radiation quanta |
CZ29250U1 (cs) * | 2016-01-29 | 2016-03-08 | Advacam S.R.O. | Vrstvený pixelový detektor ionizujícího záření |
WO2017153198A1 (en) * | 2016-03-08 | 2017-09-14 | Koninklijke Philips N.V. | Combined x-ray and nuclear imaging |
CN108957517A (zh) * | 2018-06-15 | 2018-12-07 | 中派科技(深圳)有限责任公司 | 用于正电子发射成像设备的探测器及正电子发射成像设备 |
EP3605151A1 (en) * | 2018-08-01 | 2020-02-05 | Koninklijke Philips N.V. | Photon counting detector |
CN113366342B (zh) * | 2019-01-30 | 2024-06-25 | 香港大学 | 能量分辨x射线成像设备和方法 |
CN110174693A (zh) * | 2019-06-26 | 2019-08-27 | 中国工程物理研究院流体物理研究所 | 一种堆叠式多通道康普顿二极管探测器及测量方法 |
CN113204047A (zh) * | 2021-04-22 | 2021-08-03 | 华中科技大学 | 一种半导体辐射探测器 |
EP4394456A3 (en) * | 2022-12-29 | 2024-07-10 | FEI Company | Improved detectors for microscopy |
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JPH02259590A (ja) * | 1989-03-31 | 1990-10-22 | Shimadzu Corp | 放射線検出装置 |
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- 2008-09-05 EP EP08807553A patent/EP2203763A2/en not_active Ceased
- 2008-09-05 CN CN200880105812A patent/CN101796429A/zh active Pending
- 2008-09-05 US US12/675,798 patent/US8513613B2/en active Active
- 2008-09-05 WO PCT/IB2008/053602 patent/WO2009031126A2/en active Application Filing
- 2008-09-05 JP JP2010523624A patent/JP5697982B2/ja active Active
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WO2009031126A2 (en) | 2009-03-12 |
US20100213381A1 (en) | 2010-08-26 |
US8513613B2 (en) | 2013-08-20 |
EP2203763A2 (en) | 2010-07-07 |
JP2010538293A (ja) | 2010-12-09 |
CN101796429A (zh) | 2010-08-04 |
WO2009031126A3 (en) | 2009-09-03 |
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