JP5692337B2 - 成膜装置、成膜方法及び記憶媒体 - Google Patents

成膜装置、成膜方法及び記憶媒体 Download PDF

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JP5692337B2
JP5692337B2 JP2013243025A JP2013243025A JP5692337B2 JP 5692337 B2 JP5692337 B2 JP 5692337B2 JP 2013243025 A JP2013243025 A JP 2013243025A JP 2013243025 A JP2013243025 A JP 2013243025A JP 5692337 B2 JP5692337 B2 JP 5692337B2
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gas
film forming
substrate
film
reaction
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JP2014090181A5 (enExample
JP2014090181A (ja
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武司 熊谷
武司 熊谷
寿 加藤
寿 加藤
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Tokyo Electron Ltd
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JP2013243025A 2013-11-25 2013-11-25 成膜装置、成膜方法及び記憶媒体 Active JP5692337B2 (ja)

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JP2013243025A JP5692337B2 (ja) 2013-11-25 2013-11-25 成膜装置、成膜方法及び記憶媒体

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JP2010075900A Division JP5423529B2 (ja) 2010-03-29 2010-03-29 成膜装置、成膜方法及び記憶媒体

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JP2014090181A JP2014090181A (ja) 2014-05-15
JP2014090181A5 JP2014090181A5 (enExample) 2014-06-26
JP5692337B2 true JP5692337B2 (ja) 2015-04-01

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JP7073924B2 (ja) * 2018-06-06 2022-05-24 東京エレクトロン株式会社 原子層成長法を用いて基板上に薄膜を成膜する方法、または装置
JP7712048B2 (ja) 2021-09-30 2025-07-23 東京エレクトロン株式会社 成膜方法及び成膜装置

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KR100343134B1 (ko) * 1998-07-09 2002-10-25 삼성전자 주식회사 유전막형성방법
US20070065578A1 (en) * 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
KR20090108747A (ko) * 2008-04-14 2009-10-19 삼성전자주식회사 가변적 원자층 적층 온도를 이용한 반도체 및 그 제조 방법
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置

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