JP5691797B2

JP5691797B2 - Power converter

Info

Publication number: JP5691797B2
Application number: JP2011098102A
Authority: JP
Inventors: 耕亮徳永; 智史井口; 高久金子
Original assignee: Denso Corp
Current assignee: Denso Corp
Priority date: 2011-04-26
Filing date: 2011-04-26
Publication date: 2015-04-01
Anticipated expiration: 2031-04-26
Also published as: JP2012231591A

Description

本発明は、フレームを備えた電力変換装置に関する。 The present invention relates to a power conversion device including a frame.

従来から、直流電力と交流電力との間で電力変換を行う電力変換装置として、図１７、図１８に示すごとく、半導体素子を内蔵した複数の半導体モジュール９２と、該半導体モジュール９２を冷却する冷却管９３とを積層した積層体９１０を備えたものが知られている。 Conventionally, as a power conversion device that performs power conversion between DC power and AC power, as shown in FIGS. 17 and 18, a plurality of semiconductor modules 92 incorporating semiconductor elements, and cooling for cooling the semiconductor modules 92. What is provided with the laminated body 910 which laminated | stacked the pipe | tube 93 is known.

半導体モジュール９２は、半導体素子を封止した本体部９２０と、該本体部９２０から突出したパワー端子９９および制御端子９７を備える。パワー端子９９には、直流電源（図示しない）の正電極に接続される正極端子９９ａと、直流電源の負電極に接続される負極端子９９ｂと、交流負荷に接続される交流端子９９ｃとがある。また、制御端子９７には、制御回路基板９８が接続されている。制御回路基板９８が複数の半導体モジュール９２を制御することにより、正極端子９９ａと負極端子９９ｂとの間に印加される直流電圧を交流電圧に変換し、交流端子９９ｃから出力している。 The semiconductor module 92 includes a main body portion 920 in which a semiconductor element is sealed, and a power terminal 99 and a control terminal 97 protruding from the main body portion 920. The power terminal 99 includes a positive terminal 99a connected to a positive electrode of a DC power supply (not shown), a negative terminal 99b connected to a negative electrode of the DC power supply, and an AC terminal 99c connected to an AC load. . A control circuit board 98 is connected to the control terminal 97. The control circuit board 98 controls the plurality of semiconductor modules 92, thereby converting a DC voltage applied between the positive terminal 99a and the negative terminal 99b into an AC voltage and outputting it from the AC terminal 99c.

また、電力変換装置９１は、昇圧用のリアクトル９５と、昇圧した直流電圧を平滑化するためのコンデンサ９６を備える。リアクトル９５と、コンデンサ９６と、パワー端子９９とは、図示しないバスバーによって電気的に接続されている。また、積層体９１０、リアクトル９５等はケース９００内に収納されている。 Further, the power conversion device 91 includes a boosting reactor 95 and a capacitor 96 for smoothing the boosted DC voltage. Reactor 95, capacitor 96, and power terminal 99 are electrically connected by a bus bar (not shown). The laminated body 910, the reactor 95, and the like are housed in the case 900.

図１８に示すごとく、積層体９１０の積層方向（Ｘ方向）における一端には、ばね部材９４が設けられている。このばね部材９４を用いて、積層体９１０をケース９００へ向けて押圧している。これにより、積層体９１０をケース９００内に固定している。 As shown in FIG. 18, a spring member 94 is provided at one end in the stacking direction (X direction) of the stacked body 910. Using this spring member 94, the laminated body 910 is pressed toward the case 900. Thereby, the laminated body 910 is fixed in the case 900.

電力変換装置９１は、例えば、電気自動車やハイブリッドカー等の車両に搭載される。車両が走行すると振動が生じるため、この振動に耐えられるよう、電力変換装置９１には耐振性が必要とされている。積層体９１０は、ばね部材９４によって積層方向（Ｘ方向）へ押圧されているため、Ｘ方向への振動には強い。 The power conversion device 91 is mounted on a vehicle such as an electric vehicle or a hybrid car, for example. Since vibration is generated when the vehicle travels, the power converter 91 needs to have vibration resistance so as to withstand the vibration. Since the stacked body 910 is pressed in the stacking direction (X direction) by the spring member 94, it is strong against vibration in the X direction.

特開２００７−１６６８１９号公報JP 2007-166819 A 特開２００７−１６６８２０号公報JP 2007-166820 A

しかしながら従来の電力変換装置９１は、Ｘ方向に直交する方向（Ｙ方向、Ｚ方向）への、積層体９１０の振動を抑制する部材が少ないため、Ｙ方向やＺ方向へ積層体９１０が振動しやすいという問題がある。そのため、Ｙ方向やＺ方向に振動Ｖが発生した場合に、積層体９１０の積層状態や、制御端子９７と制御回路基板９８との接続状態に影響を与えるおそれがある。 However, since the conventional power converter 91 has few members that suppress the vibration of the stacked body 910 in the direction orthogonal to the X direction (Y direction, Z direction), the stacked body 910 vibrates in the Y direction or the Z direction. There is a problem that it is easy. Therefore, when the vibration V is generated in the Y direction or the Z direction, there is a possibility that the stacked state of the stacked body 910 and the connection state between the control terminal 97 and the control circuit board 98 may be affected.

本発明は、かかる問題点に鑑みてなされたもので、耐振性に優れた積層体を備えた電力変換装置を提供しようとするものである。 The present invention has been made in view of such problems, and an object of the present invention is to provide a power conversion device provided with a laminated body having excellent vibration resistance.

第１の発明は、スイッチング素子を内蔵した複数の半導体モジュールと、該半導体モジュールを冷却する冷媒が流れる複数の冷媒流路とを積層した積層体と、
該積層体を保持するフレームとを備え、
該フレームは、底壁部と、該底壁部から該底壁部の板厚方向に向かって立設した側壁部とを有し、該側壁部の内側に形成された収納空間に上記積層体が収納され、上記底壁部において上記積層体が支持されており、
上記収納空間に上記積層体を収納するための開口部を塞ぐように、蓋板が上記フレームに固定され、
上記積層体は、上記冷媒流路を内部に有する流路形成部材を有すると共に、該流路形成部材から、上記板厚方向における上記蓋板側または上記底壁部側に向かって突出した第１突部を有し、
該蓋板と上記底壁部との間で上記積層体を上記板厚方向に挟持しており、上記第１突部は、上記板厚方向に圧潰された状態で上記蓋板または上記底壁部に当接しており、
上記流路形成部材から突出した上記第１突部は、上記蓋板または上記底壁部によって上記板厚方向における上記流路形成部材側に押圧され、上記第１突部の先端が圧潰されていることを特徴とする電力変換装置にある（請求項１）。 A first invention is a laminate in which a plurality of semiconductor modules each including a switching element and a plurality of refrigerant flow paths through which a refrigerant that cools the semiconductor modules flows are stacked.
A frame for holding the laminate,
The frame includes a bottom wall portion and a side wall portion erected from the bottom wall portion in the thickness direction of the bottom wall portion, and the laminate is formed in a storage space formed inside the side wall portion. Is stored, and the laminated body is supported on the bottom wall portion,
A lid plate is fixed to the frame so as to close an opening for storing the laminate in the storage space,
The laminated body includes a flow path forming member having the refrigerant flow path therein, and a first protruding from the flow path forming member toward the lid plate side or the bottom wall side in the plate thickness direction. Has a protrusion,
The laminate is sandwiched between the lid plate and the bottom wall portion in the plate thickness direction, and the first protrusion is crushed in the plate thickness direction, and the lid plate or the bottom wall In contact with the part ,
The first protrusion protruding from the flow path forming member is pressed toward the flow path forming member in the thickness direction by the lid plate or the bottom wall, and the tip of the first protrusion is crushed. It is in the power converter device characterized by the above-mentioned (Claim 1).

第２の発明は、電力変換装置の製造方法であって、該電力変換装置は、
スイッチング素子を内蔵した複数の半導体モジュールと、該半導体モジュールを冷却する冷媒が流れる複数の冷媒流路とを積層した積層体と、
該積層体を保持するフレームとを備え、
該フレームは、底壁部と、該底壁部から該底壁部の板厚方向に向かって立設した側壁部とを有し、該側壁部の内側に形成された収納空間に上記積層体が収納され、上記底壁部において上記積層体が支持されており、
上記収納空間に上記積層体を収納するための開口部を塞ぐように、蓋板が上記フレームに固定され、
上記積層体は、上記冷媒流路を内部に有する流路形成部材を有すると共に、該流路形成部材から、上記板厚方向における上記蓋板側または上記底壁部側に向かって突出した第１突部を有し、
該蓋板と上記底壁部との間で上記積層体を上記板厚方向に挟持しており、上記第１突部は、上記板厚方向に圧潰された状態で上記蓋板または上記底壁部に当接しており、
複数の上記流路形成部材を、互いに所定間隔をおいた状態で上記フレーム内に収容する流路形成部材収容工程と、複数の上記半導体モジュールを互いに所定間隔をおいた状態で位置決め治具に保持させるモジュール保持工程と、上記複数の半導体モジュールを保持した上記位置決め治具を上記流路形成部材に接近させると共に、該位置決め治具に形成した被係合部と上記第１突部とを係合することにより、上記複数の半導体モジュールを上記複数の流路形成部材に対して上記積層方向及び上記幅方向に位置合わせする位置合わせ工程と、位置合わせした状態で上記複数の半導体モジュールを上記位置決め治具から押し出して個々の上記流路形成部材の間に上記半導体モジュールを介在させる押し出し工程とを行うことを特徴とする電力変換装置の製造方法にある（請求項５）。 2nd invention is a manufacturing method of a power converter, and this power converter is
A laminated body in which a plurality of semiconductor modules each including a switching element and a plurality of refrigerant flow paths through which a refrigerant for cooling the semiconductor modules flows;
A frame for holding the laminate,
The frame includes a bottom wall portion and a side wall portion erected from the bottom wall portion in the thickness direction of the bottom wall portion, and the laminate is formed in a storage space formed inside the side wall portion. Is stored, and the laminated body is supported on the bottom wall portion,
A lid plate is fixed to the frame so as to close an opening for storing the laminate in the storage space,
The laminated body includes a flow path forming member having the refrigerant flow path therein, and a first protruding from the flow path forming member toward the lid plate side or the bottom wall side in the plate thickness direction. Has a protrusion,
The laminate is sandwiched between the lid plate and the bottom wall portion in the plate thickness direction, and the first protrusion is crushed in the plate thickness direction, and the lid plate or the bottom wall In contact with the part,
A flow path forming member accommodating step for accommodating the plurality of flow path forming members in the frame with a predetermined interval therebetween, and a plurality of the semiconductor modules held by the positioning jig with a predetermined interval therebetween. A module holding step, the positioning jig holding the plurality of semiconductor modules is brought close to the flow path forming member, and the engaged portion formed on the positioning jig and the first protrusion are engaged. An alignment step of aligning the plurality of semiconductor modules with respect to the plurality of flow path forming members in the stacking direction and the width direction, and positioning the plurality of semiconductor modules in the aligned state. And an extrusion process of extruding the semiconductor module between the individual flow path forming members. In the method of manufacturing (claim 5).

また、第３の発明は、上記電力変換装置を製造する方法であって、
上記第１突部が上記フレームの開口側または上記底壁部側を向いた状態で、上記積層体を上記フレーム内に収容する積層体収容工程と、
上記フレームの開口を塞ぐように蓋板を固定することにより、上記第１突部を上記底壁部の板厚方向に圧潰すると共に、該蓋板と上記底壁部との間で、上記積層体を上記板厚方向に挟持して保持する積層体保持工程と、
を行うことを特徴とする電力変換装置の製造方法にある（請求項６）。 Moreover, 3rd invention is a method of manufacturing the said power converter device, Comprising:
A laminated body accommodation step of accommodating the laminated body in the frame in a state where the first protrusion faces the opening side or the bottom wall side of the frame;
By fixing the cover plate so as to close the opening of the frame, the first protrusion is crushed in the thickness direction of the bottom wall portion, and the lamination is performed between the cover plate and the bottom wall portion. A laminated body holding step of holding and holding the body in the plate thickness direction;
In the manufacturing method of the power converter characterized by performing (Claim 6).

第１の発明にかかる電力変換装置は、蓋板と底壁部との間で積層体を板厚方向に挟持してなるため、積層体の、板厚方向における振動を抑制できる。しかも、第１突部が圧潰された状態で積層体を挟持しているため、第１突部において積層体を蓋板または底壁部に密着させることができる。また、積層体の、第１突部を設けた側とは反対側も、蓋板または底壁部に密着させることができる。そのため、蓋板と底壁部との間で積層体の板厚方向へのガタ量が少なくなり、積層体を板厚方向にしっかりと挟持することが可能になる。これにより、積層体の、板厚方向における耐振性を高めることができる。 Since the power converter concerning 1st invention sandwiches a layered product in the board thickness direction between a cover board and a bottom wall part, it can control vibration in a board thickness direction of a layered product. And since the laminated body is clamped in the state which the 1st protrusion was crushed, a laminated body can be closely_contact | adhered to a cover board or a bottom wall part in a 1st protrusion. Further, the side of the laminate that is opposite to the side on which the first protrusions are provided can be brought into close contact with the cover plate or the bottom wall. Therefore, the backlash in the thickness direction of the laminate is reduced between the cover plate and the bottom wall portion, and the laminate can be securely held in the thickness direction. Thereby, the vibration resistance in the plate | board thickness direction of a laminated body can be improved.

また、第２の発明に係る電力変換装置の製造方法においては、位置決め治具に形成した上記被係合部を上記第１突部に係合させることにより、上記位置合わせ工程を行うことが可能になる。そのため、位置合わせ工程を行うための専用の突部を、流路形成部材に設ける必要がなくなる。 Moreover, in the manufacturing method of the power converter device which concerns on 2nd invention, it is possible to perform the said alignment process by engaging the said to-be-engaged part formed in the positioning jig with the said 1st protrusion. become. Therefore, it is not necessary to provide a dedicated protrusion for performing the alignment process on the flow path forming member.

また、第３の発明にかかる電力変換装置の製造方法は、上記積層体保持工程において、フレームに蓋板を固定する際に、第１突部を上記板厚方向に圧潰するため、第１突部において積層体を蓋板または底壁部に確実に当接させることができる。そのため、積層体を板厚方向両側からしっかり固定でき、積層体の、板厚方向における耐振性を向上させることができる。 Further, in the method of manufacturing the power conversion device according to the third aspect of the invention, the first protrusion is crushed in the plate thickness direction when the cover plate is fixed to the frame in the laminate holding step. The laminate can be reliably brought into contact with the cover plate or the bottom wall at the portion. Therefore, the laminate can be firmly fixed from both sides in the plate thickness direction, and the vibration resistance of the laminate in the plate thickness direction can be improved.

以上のごとく、本発明によれば、耐振性に優れた積層体を備えた電力変換装置を提供することができる。 As mentioned above, according to this invention, the power converter device provided with the laminated body excellent in vibration resistance can be provided.

実施例１における、電力変換装置の断面図。Sectional drawing of the power converter device in Example 1. FIG. 図１のＡ−Ａ断面図。AA sectional drawing of FIG. 図２のＢ−Ｂ断面図。BB sectional drawing of FIG. 実施例１における、冷却管の部分拡大斜視図。FIG. 3 is a partially enlarged perspective view of a cooling pipe in the first embodiment. 実施例１における、流路形成部材収容工程の説明図。Explanatory drawing of the flow-path formation member accommodation process in Example 1. FIG. 実施例１における、流路形成部材収容工程を説明するための拡大断面図。The expanded sectional view for demonstrating the flow-path formation member accommodation process in Example 1. FIG. 図６のＣ矢視図。C arrow line view of FIG. 実施例１における、モジュール保持工程の説明図。Explanatory drawing of the module holding process in Example 1. FIG. 実施例１における、位置合わせ工程および押し出し工程の説明図。Explanatory drawing of the position alignment process and extrusion process in Example 1. FIG. 図９のＤ−Ｄ拡大断面図。DD enlarged sectional view of FIG. 実施例１における、押し出し工程が完了した状態での電力変換装置の断面図。Sectional drawing of the power converter device in the state which the extrusion process in Example 1 was completed. 図１１のＥ−Ｅ拡大断面図。EE expanded sectional view of FIG. 実施例１における、積層体保持工程を説明するための拡大断面図。The expanded sectional view for demonstrating the laminated body holding process in Example 1. FIG. 実施例２における、電力変換装置の断面図。Sectional drawing of the power converter device in Example 2. FIG. 実施例２における、第３突部の拡大斜視図。The expansion perspective view of the 3rd projection in Example 2. 実施例２における、半導体モジュールと冷媒流路とを一体化した例。The example which integrated the semiconductor module and the refrigerant | coolant flow path in Example 2. FIG. 従来例における、電力変換装置の断面図。Sectional drawing of the power converter device in a prior art example. 図１７のＦ−Ｆ断面図。FF sectional drawing of FIG.

上述した本発明における好ましい実施の形態につき説明する。
上記電力変換装置は、例えば、電気自動車やハイブリッド車に搭載するための車載用電力変換装置とすることができる。 A preferred embodiment of the present invention described above will be described.
The power conversion device can be, for example, a vehicle-mounted power conversion device to be mounted on an electric vehicle or a hybrid vehicle.

また、上記積層体は、上記積層体の積層方向と上記板厚方向との双方に直交する幅方向に向かって上記流路形成部材から互いに反対側に突出した一対の第２突部を有し、上記積層体は、上記収納空間内において上記側壁部によって上記幅方向に挟持され、上記一対の第２突部は、圧潰された状態で上記側壁部にそれぞれ当接していることが好ましい（請求項３）。
この場合には、積層体は、側壁部によって上記幅方向にも挟持されているため、該幅方向における積層体の振動を抑制できる。しかも、一対の第２突部が側壁部によって圧潰された状態で、積層体を挟持しているため、第２突部において積層体と側壁部とを密着させることができる。そのため、収納空間内において積層体の幅方向へのガタ量が少なくなり、積層体の、幅方向における耐振性をも高めることが可能になる。すなわち、板厚方向及び幅方向の双方について、積層体の耐振性を高めることができる。 The laminated body has a pair of second protrusions that protrude from the flow path forming member to opposite sides in the width direction perpendicular to both the laminating direction of the laminated body and the plate thickness direction. The laminated body is preferably sandwiched in the width direction by the side wall portion in the storage space, and the pair of second protrusions are in contact with the side wall portion in a crushed state, respectively. Item 3 ).
In this case, the laminated body is also sandwiched by the side wall portions in the width direction, so that the vibration of the laminated body in the width direction can be suppressed. Moreover, since the stacked body is sandwiched with the pair of second protrusions being crushed by the side wall portions, the stacked body and the side wall portions can be brought into close contact with each other at the second protrusion portions. Therefore, the amount of play in the width direction of the laminate is reduced in the storage space, and the vibration resistance in the width direction of the laminate can be improved. That is, the vibration resistance of the laminate can be enhanced in both the plate thickness direction and the width direction.

また、上記一対の第２突部の側部にはそれぞれテーパ面が形成されており、上記幅方向における上記一対のテーパ面間の間隔は、上記底壁部から上記蓋板に向かうほど次第に広くなっており、上記第２突部の、上記板厚方向における上記蓋板側の部位が、上記側壁部によって圧潰されていることが好ましい（請求項４）。
この場合には、積層体をフレームに収納する作業を行う場合に、幅方向における一対のテーパ面間の間隔が狭い側から、流路形成部材をフレームに収納できるため、収納作業を行いやすくなる。 Further, taper surfaces are respectively formed on the side portions of the pair of second protrusions, and an interval between the pair of taper surfaces in the width direction is gradually increased from the bottom wall portion toward the lid plate. It is preferable that a portion of the second protrusion on the lid plate side in the plate thickness direction is crushed by the side wall portion (Claim 4 ).
In this case, when the stack is stored in the frame, the flow path forming member can be stored in the frame from the side where the distance between the pair of tapered surfaces in the width direction is narrow, so that the storing operation is facilitated. .

また、スイッチング素子を内蔵した複数の半導体モジュールと、該半導体モジュールを冷却する冷媒が流れる複数の冷媒流路とを積層した積層体と、
該積層体を保持するフレームとを備え、
該フレームは、底壁部と、該底壁部から該底壁部の板厚方向に向かって立設した側壁部とを有し、該側壁部の内側に形成された収納空間に上記積層体が収納され、上記底壁部において上記積層体が支持されており、
上記収納空間に上記積層体を収納するための開口部を塞ぐように、蓋板が上記フレームに固定され、
上記積層体は、上記冷媒流路を内部に有する流路形成部材を有すると共に、該流路形成部材から、上記板厚方向における上記蓋板側または上記底壁部側に向かって突出した第１突部を有し、
該蓋板と上記底壁部との間で上記積層体を上記板厚方向に挟持しており、上記第１突部は、上記板厚方向に圧潰された状態で上記蓋板または上記底壁部に当接しており、
上記蓋板は剛性部材であり、該蓋板は上記板厚方向に貫通した貫通穴を有し、上記半導体モジュールは電極端子を有し、該電極端子は上記貫通穴を貫通しており、上記第１突部は、上記積層体の積層方向と上記板厚方向との双方に直交する幅方向における上記貫通穴の両側に配置され、該貫通穴の両側における一対の上記第１突部の間隔は、上記幅方向における上記半導体モジュールの幅よりも長いことが好ましい（請求項２）。
この場合には、一対の第１突部の間に位置する貫通穴の、上記幅方向における幅をも広くすることができる。そのため、半導体モジュールの電極端子が、貫通穴の内面に接触する不具合を防止しやすくなる。
なお、例えば、半導体モジュールの信号端子やパワー端子を、上記電極端子として貫通穴に貫通させることができる。 Also, a laminated body in which a plurality of semiconductor modules incorporating switching elements and a plurality of refrigerant flow paths through which a refrigerant for cooling the semiconductor modules flows,
A frame for holding the laminate,
The frame includes a bottom wall portion and a side wall portion erected from the bottom wall portion in the thickness direction of the bottom wall portion, and the laminate is formed in a storage space formed inside the side wall portion. Is stored, and the laminated body is supported on the bottom wall portion,
A lid plate is fixed to the frame so as to close an opening for storing the laminate in the storage space,
The laminated body includes a flow path forming member having the refrigerant flow path therein, and a first protruding from the flow path forming member toward the lid plate side or the bottom wall side in the plate thickness direction. Has a protrusion,
The laminate is sandwiched between the lid plate and the bottom wall portion in the plate thickness direction, and the first protrusion is crushed in the plate thickness direction, and the lid plate or the bottom wall In contact with the part,
The lid plate is a rigid member, the lid plate has a through-hole penetrating in the plate thickness direction, the semiconductor module has an electrode terminal, the electrode terminal penetrates the through-hole, The first protrusions are disposed on both sides of the through hole in the width direction perpendicular to both the stacking direction of the laminate and the plate thickness direction, and the distance between the pair of first protrusions on both sides of the through hole. is preferably longer than the width of the semiconductor module in the width direction (claim 2).
In this case, the width in the width direction of the through hole located between the pair of first protrusions can be increased. Therefore, it becomes easy to prevent the trouble that the electrode terminal of the semiconductor module contacts the inner surface of the through hole.
For example, a signal terminal or a power terminal of the semiconductor module can be passed through the through hole as the electrode terminal.

（実施例１）
本発明に実施例にかかる電力変換装置につき、図１〜図１３を用いて説明する。
図１、図２に示すごとく、本例の電力変換装置１は、複数の半導体モジュール２と複数の冷媒流路３０とを積層してなる積層体１０と、フレーム４とを備える。半導体モジュール２は、スイッチング素子を内蔵している。また、冷媒流路３０には、半導体モジュール２を冷却する冷媒１５が流れる。フレーム４は、積層体１０を保持している。
フレーム４は、底壁部４０と、該底壁部４０から底壁部４０の板厚方向（Ｚ方向）に向かって立設した側壁部４１とを有する。側壁部４１の内側に形成された収納空間Ｓに積層体１０が収納されている。底壁部４０において積層体１０が支持されている。 Example 1
A power converter according to an embodiment of the present invention will be described with reference to FIGS.
As shown in FIGS. 1 and 2, the power conversion device 1 of this example includes a stacked body 10 formed by stacking a plurality of semiconductor modules 2 and a plurality of refrigerant flow paths 30, and a frame 4. The semiconductor module 2 includes a switching element. In addition, the refrigerant 15 for cooling the semiconductor module 2 flows through the refrigerant flow path 30. The frame 4 holds the laminated body 10.
The frame 4 includes a bottom wall portion 40 and side wall portions 41 erected from the bottom wall portion 40 in the plate thickness direction (Z direction) of the bottom wall portion 40. The stacked body 10 is stored in a storage space S formed inside the side wall portion 41. The laminated body 10 is supported on the bottom wall portion 40.

収納空間Ｓに積層体１０を収納するための開口部４００を塞ぐように、蓋板５がフレーム４に固定されている。
積層体１０は、冷媒流路３０を内部に有する流路形成部材である冷却管３を有する。冷却管３から、板厚方向（Ｚ方向）における蓋板５側に向かって第１突部６１が突出している。
蓋板５と底壁部４０との間で積層体１０を板厚方向（Ｚ方向）に挟持している。第１突部６１は、板厚方向（Ｚ方向）に圧潰された状態で蓋板５に当接している。 The cover plate 5 is fixed to the frame 4 so as to close the opening 400 for storing the stacked body 10 in the storage space S.
The laminate 10 includes a cooling pipe 3 that is a flow path forming member having a refrigerant flow path 30 therein. A first protrusion 61 protrudes from the cooling pipe 3 toward the cover plate 5 in the plate thickness direction (Z direction).
The laminate 10 is sandwiched between the lid plate 5 and the bottom wall portion 40 in the plate thickness direction (Z direction). The first protrusion 61 is in contact with the cover plate 5 in a state of being crushed in the plate thickness direction (Z direction).

本例の電力変換装置１は、電気自動車やハイブリッド車に搭載される車載用電力変換装置である。 The power converter 1 of this example is a vehicle-mounted power converter mounted on an electric vehicle or a hybrid vehicle.

半導体モジュール２は、スイッチング素子を封止した本体部２０を備える。この本体部２０から複数の信号端子２１およびパワー端子２２が、Ｚ方向に向かって互いに反対側に突出している。信号端子２１は制御回路基板１１に接続している。また、パワー端子２２には、直流電源（図示しない）の正電極に接続した正極端子２２ａと、直流電源の負電極に接続した負極端子２２ｂと、交流負荷に接続した交流端子２２ｃとがある。制御回路基板１１の制御回路が複数の半導体モジュール２のオンオフ動作を制御することにより、正極端子２２ａと負極端子２２ｂとの間に印加される直流電圧を交流電圧に変換し、交流端子２２ｃから出力している。 The semiconductor module 2 includes a main body 20 in which a switching element is sealed. A plurality of signal terminals 21 and power terminals 22 protrude from the main body portion 20 on the opposite sides in the Z direction. The signal terminal 21 is connected to the control circuit board 11. The power terminal 22 includes a positive terminal 22a connected to a positive electrode of a DC power supply (not shown), a negative terminal 22b connected to a negative electrode of the DC power supply, and an AC terminal 22c connected to an AC load. The control circuit of the control circuit board 11 controls the on / off operation of the plurality of semiconductor modules 2 to convert the DC voltage applied between the positive terminal 22a and the negative terminal 22b into an AC voltage and output from the AC terminal 22c. doing.

図１に示すごとく、蓋板５には、Ｚ方向に貫通した貫通穴５０が形成されている。制御端子２１は、貫通穴５０を貫通し、蓋板５の、Ｚ方向における収納空間Ｓとは反対側まで延びている。そして、制御端子２１の先端は、上記制御回路基板１１に接続している。制御回路基板１１は、蓋板５に設けられた固定部１１０に固定されている。 As shown in FIG. 1, the cover plate 5 has a through hole 50 penetrating in the Z direction. The control terminal 21 passes through the through hole 50 and extends to the side of the cover plate 5 opposite to the storage space S in the Z direction. The tip of the control terminal 21 is connected to the control circuit board 11. The control circuit board 11 is fixed to a fixing part 110 provided on the lid plate 5.

また、底壁部４０には、Ｚ方向に貫通した底壁側貫通穴４５が形成されている。パワー端子２２は、この底壁側貫通穴４５を挿通している。個々のパワー端子２２には、図示しないバスバーが接続されている。 Further, a bottom wall side through hole 45 penetrating in the Z direction is formed in the bottom wall portion 40. The power terminal 22 is inserted through the bottom wall side through hole 45. A bus bar (not shown) is connected to each power terminal 22.

図２に示すごとく、フレーム４は、Ｚ方向（紙面に垂直な方向）から見た形状が略矩形状を呈している。複数の冷却管３のうち、積層体１０の積層方向（Ｘ方向）における一端に位置する冷却管３ａには、冷媒流路３０に冷媒１５を導入するための導入パイプ１３と、冷媒流路３０から冷媒１５を導出するための導出パイプ１４とが取り付けられている。隣り合う２個の冷却管３の間は、冷媒流路３０の長手方向（Ｙ方向）の両端部において、一対の連結管３１によって接続されている。導入パイプ１３から冷媒１５を導入すると、冷媒１５は冷媒流路３０内を分配されて流れ、導出パイプ１４から導出する。これにより、半導体モジュール２を冷却するようになっている。 As shown in FIG. 2, the frame 4 has a substantially rectangular shape when viewed from the Z direction (direction perpendicular to the paper surface). Among the plurality of cooling pipes 3, the cooling pipe 3 a positioned at one end in the stacking direction (X direction) of the stacked body 10 includes an introduction pipe 13 for introducing the refrigerant 15 into the refrigerant flow path 30, and the refrigerant flow path 30. A lead-out pipe 14 for leading the refrigerant 15 from is attached. Two adjacent cooling pipes 3 are connected by a pair of connecting pipes 31 at both ends in the longitudinal direction (Y direction) of the refrigerant flow path 30. When the refrigerant 15 is introduced from the introduction pipe 13, the refrigerant 15 is distributed in the refrigerant flow path 30 and flows out from the outlet pipe 14. Thereby, the semiconductor module 2 is cooled.

図２、図３に示すごとく、フレーム４の、Ｘ方向に直交する２つの内面４０１，４０２のうち、導入パイプ１３及び導出パイプ１４を設けた側の内面４０１（一方の内面４０１）と、積層体１０との間にばね部材１２が設けられている。このばね部材１２を使って積層体１０をＸ方向に押圧し、他方の内面４０２に押し付けている。これにより、積層体１０をフレーム４内に保持すると共に、冷却管３と半導体モジュール２とを密着させている。ばね部材１２と積層体１０との間には、冷却管３ａがばね部材１２の弾性力によって変形することを防止するための補強板１６が介在している。 As shown in FIGS. 2 and 3, of the two inner surfaces 401 and 402 orthogonal to the X direction of the frame 4, the inner surface 401 (one inner surface 401) on the side where the introduction pipe 13 and the outlet pipe 14 are provided, and the lamination A spring member 12 is provided between the body 10 and the body 10. Using this spring member 12, the laminate 10 is pressed in the X direction and pressed against the other inner surface 402. Thereby, the laminated body 10 is held in the frame 4 and the cooling pipe 3 and the semiconductor module 2 are brought into close contact with each other. A reinforcing plate 16 for preventing the cooling pipe 3a from being deformed by the elastic force of the spring member 12 is interposed between the spring member 12 and the laminate 10.

なお、本例では、フレーム４の一方の内面４０１と積層体１０との間にばね部材１２を設けたが、フレーム４の他方の内面４０２と積層体１０との間にばね部材１２を設けてもよい。この場合、積層体１０は、一方の内面４０１に向かって押圧されることになる。 In this example, the spring member 12 is provided between one inner surface 401 of the frame 4 and the laminate 10, but the spring member 12 is provided between the other inner surface 402 of the frame 4 and the laminate 10. Also good. In this case, the laminated body 10 is pressed toward one inner surface 401.

図４、図１２に示すごとく、第１突部６１は、冷却管３からＺ方向に突出した板状部６１１と、該板状部６１１の先端６１５に設けられ、板状部６１１と一体に形成された円弧状部６１２とを備える。板状部６１１の板厚方向は、Ｘ方向と一致している。円弧状部６１２の厚さは、板状部６１１の厚さと略同一である。Ｙ方向から見た場合に、円弧状部６１２の外面６１３は略半円状を呈している。円弧状部６１２は、Ｚ方向における、冷却管３とは反対側に向かって凸となる形状に形成されている。蓋板５を固定する前の状態において、円弧状部６１２の先端６１４は、Ｚ方向における、板状部６１１の先端６１５と略同じ高さ位置にある。また、図１３に示すごとく、蓋板５をフレーム４に固定すると、円弧状部６１２の頂点６１６に蓋板５が当接し、蓋板５によって円弧状部６１２が冷却管３側に押圧される。そして、板状部６１１の先端６１５において円弧状部６１２が折れ曲がる。これにより、第１突部６１が圧潰される。 As shown in FIGS. 4 and 12, the first protrusion 61 is provided at the plate-like portion 611 protruding from the cooling pipe 3 in the Z direction and at the tip 615 of the plate-like portion 611, and integrally with the plate-like portion 611. And an arcuate portion 612 formed. The plate thickness direction of the plate-like portion 611 coincides with the X direction. The thickness of the arc-shaped portion 612 is substantially the same as the thickness of the plate-shaped portion 611. When viewed from the Y direction, the outer surface 613 of the arc-shaped portion 612 has a substantially semicircular shape. The arc-shaped portion 612 is formed in a shape that protrudes toward the opposite side of the cooling pipe 3 in the Z direction. In a state before the cover plate 5 is fixed, the tip 614 of the arc-shaped portion 612 is substantially at the same height as the tip 615 of the plate-like portion 611 in the Z direction. As shown in FIG. 13, when the lid plate 5 is fixed to the frame 4, the lid plate 5 comes into contact with the apex 616 of the arc-shaped portion 612, and the arc-shaped portion 612 is pressed toward the cooling pipe 3 by the lid plate 5. . Then, the arc-shaped portion 612 is bent at the tip 615 of the plate-shaped portion 611. Thereby, the 1st protrusion 61 is crushed.

図１、図２に示すごとく、積層体１０は、積層体１０の積層方向（Ｘ方向）と上記板厚方向（Ｚ方向）との双方に直交する幅方向（Ｙ方向）に向かって冷却管３から互いに反対側に突出した一対の第２突部６２を有する。積層体１０は、収納空間Ｓ内において側壁部４１によってＹ方向に挟持されている。一対の第２突部６２ａ，６２ｂは、圧潰された状態で側壁部４１にそれぞれ当接している。
なお、本例の第１突部６１および第２突部６２は、冷却管３と一体に形成され、それぞれアルミニウム等の金属からなる。 As shown in FIG. 1 and FIG. 2, the laminated body 10 includes a cooling pipe in the width direction (Y direction) orthogonal to both the lamination direction (X direction) of the laminated body 10 and the plate thickness direction (Z direction). 3 has a pair of second protrusions 62 protruding to opposite sides from each other. The stacked body 10 is sandwiched in the Y direction by the side wall 41 in the storage space S. The pair of second protrusions 62a and 62b are in contact with the side wall 41 in a crushed state.
In addition, the 1st protrusion 61 and the 2nd protrusion 62 of this example are integrally formed with the cooling pipe 3, and consist of metals, such as aluminum, respectively.

図１に示すごとく、一対の第２突部６２の側部にはそれぞれテーパ面６９が形成されている。Ｙ方向における一対のテーパ面６９ａ，６９ｂ間の間隔は、底壁部４０から蓋板５側に向かうほど次第に広くなっている。そして、第２突部６２の、Ｚ方向における蓋板５側の部位が、側壁部４１によって圧潰されている。 As shown in FIG. 1, tapered surfaces 69 are formed on the sides of the pair of second protrusions 62. The distance between the pair of tapered surfaces 69a and 69b in the Y direction gradually increases from the bottom wall 40 toward the cover plate 5 side. A portion of the second protrusion 62 on the lid plate 5 side in the Z direction is crushed by the side wall 41.

蓋板５は剛性部材からなる。蓋板５の材料としては、例えば、鉄やアルミニウム等の金属や、樹脂が用いられる。また、上述したように、蓋板５はＺ方向に貫通した貫通穴５０を備える。そして、半導体モジュール２の信号端子２１（電極端子）は貫通穴５０を貫通している。第１突部６１は、Ｙ方向における貫通穴５０の両側に配置されている。そして、貫通穴５０の両側における一対の第１突部６１ａ，６１ｂの間隔Ｗ１は、Ｙ方向における半導体モジュール２の幅Ｗ２よりも長い。
なお、本例では、信号端子２１（電極端子）が貫通穴５０を貫通しているが、パワー端子２２が貫通穴５０を貫通するようにしてもよい。 The lid plate 5 is made of a rigid member. As a material of the cover plate 5, for example, a metal such as iron or aluminum, or a resin is used. Moreover, as mentioned above, the cover plate 5 includes a through hole 50 penetrating in the Z direction. The signal terminal 21 (electrode terminal) of the semiconductor module 2 passes through the through hole 50. The first protrusions 61 are disposed on both sides of the through hole 50 in the Y direction. The interval W1 between the pair of first protrusions 61a and 61b on both sides of the through hole 50 is longer than the width W2 of the semiconductor module 2 in the Y direction.
In this example, the signal terminal 21 (electrode terminal) passes through the through hole 50, but the power terminal 22 may pass through the through hole 50.

次に、本例の電力変換装置１の製造方法について説明する。本例では、次の積層体収容工程（図５〜図１２参照）と、積層体保持工程（図１、図１３参照）とを行う。積層体収容工程では、図１１に示すごとく、積層体１０をフレーム４内に収容し、第１突部６１がフレーム４の開口４００側を向いた状態にする。また、積層体保持工程では、図１、図１３に示すごとく、フレーム４の開口４００を塞ぐように蓋板５を固定する。そして、第１突部６１をＺ方向に圧潰すると共に、蓋板５と底壁部４０との間で、積層体１０をＺ方向に挟持して保持する。 Next, the manufacturing method of the power converter device 1 of this example is demonstrated. In this example, the next laminated body accommodation step (see FIGS. 5 to 12) and the laminated body holding step (see FIGS. 1 and 13) are performed. In the laminated body accommodation step, as shown in FIG. 11, the laminated body 10 is accommodated in the frame 4 so that the first protrusion 61 faces the opening 400 side of the frame 4. In the laminated body holding step, the cover plate 5 is fixed so as to close the opening 400 of the frame 4 as shown in FIGS. Then, the first protrusion 61 is crushed in the Z direction, and the laminate 10 is sandwiched and held in the Z direction between the cover plate 5 and the bottom wall portion 40.

積層体保持工程は、次の流路形成部材収容工程（図５〜図７参照）と、モジュール保持工程（図８参照）と、位置合わせ工程（図９参照）と、押し出し工程（図９参照）とに細分化することができる。
図７に示すごとく、流路形成部材収容工程では、複数の冷却管３を、互いに平行にした状態でフレーム４内に収納する。この工程では、略矩形状を呈するフレーム４の短辺方向（Ｙ方向）に対して、冷却管３の長手方向が平行になるように、該冷却管３をフレーム４内に収納する。複数の冷却管３は、その長手方向における両端部を一対の連結管３１を使って予め連結しておく。複数の冷却管３は、隣り合う２個の冷却管３の間に、連結管３１と同じ長さの隙間ｄ１を空けた状態で、フレーム４に収納される。この間隔ｄ１は、半導体モジュール２の厚さよりも長くなるようにしておく。 The laminated body holding step includes the following flow path forming member accommodation step (see FIGS. 5 to 7), module holding step (see FIG. 8), alignment step (see FIG. 9), and extrusion step (see FIG. 9). ) And can be subdivided.
As shown in FIG. 7, in the flow path forming member housing step, the plurality of cooling pipes 3 are housed in the frame 4 in a state of being parallel to each other. In this step, the cooling pipe 3 is accommodated in the frame 4 so that the longitudinal direction of the cooling pipe 3 is parallel to the short side direction (Y direction) of the frame 4 having a substantially rectangular shape. The plurality of cooling pipes 3 are previously connected at both ends in the longitudinal direction using a pair of connecting pipes 31. The plurality of cooling pipes 3 are accommodated in the frame 4 with a gap d1 having the same length as the connecting pipe 31 between two adjacent cooling pipes 3. The interval d1 is set to be longer than the thickness of the semiconductor module 2.

図５に示すごとく、第２突部６２には、上述したテーパ面６９が形成されている。流路形成部材収容工程では、一対のテーパ面６９ａ，６９ｂ間の、Ｙ方向における間隔が狭い側から、冷却管３をフレーム４内に収容し、図６に示すごとく、冷却管３を底壁部４０に当接させる。このとき、一対の第２突部６２のうち一対のテーパ面６９ａ，６９ｂ間のＹ方向における間隔が広い部位６２０が一対の側壁部４１に当接すると共に圧潰されながら、冷却管３がフレーム４内に挿入される。これにより、冷却管３がＹ方向から一対の側壁部４１によって挟持された状態でフレーム４内に収まる。 As shown in FIG. 5, the tapered surface 69 described above is formed on the second protrusion 62. In the flow path forming member housing step, the cooling pipe 3 is housed in the frame 4 from the side where the gap in the Y direction between the pair of taper surfaces 69a and 69b is narrow, and as shown in FIG. It abuts on the part 40. At this time, of the pair of second protrusions 62, the portion 620 having a wide interval in the Y direction between the pair of tapered surfaces 69a and 69b abuts against the pair of side wall portions 41 and is crushed while the cooling pipe 3 is in the frame 4. Inserted into. Thereby, the cooling pipe 3 is accommodated in the frame 4 in a state of being sandwiched by the pair of side wall portions 41 from the Y direction.

図７に示すごとく、流路形成部材収容工程が完了すると、全ての第１突部６１が、Ｚ方向における同一方向側を向く。全ての第１突部６１のＺ方向における位置は、略同一になる。 As shown in FIG. 7, when the flow path forming member accommodation step is completed, all the first protrusions 61 face the same direction in the Z direction. The positions of all the first protrusions 61 in the Z direction are substantially the same.

また、上記モジュール保持工程では、図８に示すごとく、複数の半導体モジュール２を、互いに所定間隔ｄ２をおいた状態で位置決め治具７に保持させる。間隔ｄ２は、冷却管３の厚さよりも長くしておく。位置決め治具７は、Ｚ方向から見た場合の形状が略矩形状の枠部７１と、該枠部７１の内面７５から枠内に突出した複数の保持用突部７２を備える。そして、Ｙ方向に相対向した一対の保持用突部７２を使って半導体モジュール２を保持するようになっている。 In the module holding step, as shown in FIG. 8, the plurality of semiconductor modules 2 are held by the positioning jig 7 with a predetermined distance d2 between them. The interval d2 is set longer than the thickness of the cooling pipe 3. The positioning jig 7 includes a frame portion 71 having a substantially rectangular shape when viewed from the Z direction, and a plurality of holding projections 72 protruding from the inner surface 75 of the frame portion 71 into the frame. The pair of holding projections 72 facing each other in the Y direction is used to hold the semiconductor module 2.

図９、図１０に示すごとく、位置決め治具７の枠部７１には、パワー端子２２の突出側の端面７９に、凹状の被係合部７０が形成されている。この被係合部７０を用いて、位置合わせ工程を行う。位置合わせ工程では、複数の半導体モジュール２を保持した位置決め治具７を冷却管３に接近させ、被係合部７０と第１突部６１とを係合させる。これにより、複数の半導体モジュール２を複数の冷却管３に対してＸ方向及びＹ方向に位置合わせする。 As shown in FIGS. 9 and 10, the frame portion 71 of the positioning jig 7 has a concave engaged portion 70 formed on the end surface 79 on the protruding side of the power terminal 22. An alignment process is performed using the engaged portion 70. In the alignment step, the positioning jig 7 holding the plurality of semiconductor modules 2 is brought close to the cooling pipe 3 and the engaged portion 70 and the first protrusion 61 are engaged. Accordingly, the plurality of semiconductor modules 2 are aligned with respect to the plurality of cooling pipes 3 in the X direction and the Y direction.

図８に示すごとく、位置決め治具７には２個の被係合部７０が形成されている。この２個の被係合部７０は、Ｚ方向から見た場合に、矩形状の枠部７１の対角線上にそれぞれ位置している。２個の被係合部７０のうち一方の被係合部７０ａは、図７に示す複数の冷却管３のうちＸ方向における一端に位置する冷却管３ａの、Ｙ方向における導出パイプ１４側の第１突部６１ｃに係合する。また、２個の被係合部７０のうち他方の被係合部７０ｂは、図７に示す複数の冷却管３のうちＸ方向における他端に位置する冷却管３ｂの、Ｙ方向における導入パイプ１３側の第１突部６１ｄに係合する。 As shown in FIG. 8, two engaged portions 70 are formed in the positioning jig 7. The two engaged portions 70 are located on diagonal lines of the rectangular frame portion 71 when viewed from the Z direction. One engaged portion 70a of the two engaged portions 70 is on the outlet pipe 14 side in the Y direction of the cooling tube 3a located at one end in the X direction among the plurality of cooling tubes 3 shown in FIG. Engage with the first protrusion 61c. The other engaged portion 70b of the two engaged portions 70 is an introduction pipe in the Y direction of the cooling pipe 3b located at the other end in the X direction among the plurality of cooling pipes 3 shown in FIG. The first protrusion 61d on the 13th side is engaged.

このように位置合わせ工程を行った後、押し出し工程を行う。押し出し工程では、図９に示すごとく、位置合わせした状態で複数の半導体モジュール２を位置決め治具７から押し出して、個々の冷却管３の間に半導体モジュール２を介在させる。 After performing the alignment process in this way, an extrusion process is performed. In the extrusion process, as shown in FIG. 9, the plurality of semiconductor modules 2 are extruded from the positioning jig 7 in the aligned state, and the semiconductor modules 2 are interposed between the individual cooling pipes 3.

以上の工程を行った後、フレーム４の一方の内面４０１（図２参照）と積層体１０との間に、Ｘ方向に押圧して弾性変形させたばね部材１２を挿入し、弾性復帰させる。これにより、ばね部材１２の弾性力を使って積層体１０を他方の内面４０２に向けて押圧し、積層体１０をフレーム４内に固定すると共に、個々の半導体モジュール２と冷却管３とを密着させる。 After performing the above steps, the spring member 12 pressed in the X direction and elastically deformed is inserted between one inner surface 401 (see FIG. 2) of the frame 4 and the laminated body 10 to be elastically restored. Thereby, the laminated body 10 is pressed toward the other inner surface 402 by using the elastic force of the spring member 12 to fix the laminated body 10 in the frame 4, and the individual semiconductor modules 2 and the cooling pipes 3 are brought into close contact with each other. Let

図１１に示すごとく、蓋板５を固定する前の状態においては、第１突部６１と信号端子２１とが、側壁部４１の端面４１５からＺ方向外側に突出している。この状態の後、蓋板５（図１参照）を使って開口部４００を塞ぎ、蓋板５をフレーム４に固定する。例えば、蓋板５を、側壁部４１の端面４１５にカシメ固定する。蓋板５をフレーム４の開口部４００に配置する際には、まず、蓋板５を、端面４１５に当接させるようにフレーム４側へ押圧する。このとき、図１３に示すごとく、円弧状部６１２の頂点６１６に蓋板５が当接する。そして、円弧状部６１２が、Ｚ方向における冷却管３側に押圧される。そして、板状部６１１の先端６１５において円弧状部６１２が折れ曲がる。これにより、第１突部６１が圧潰される。また、信号端子２１は、蓋板５の貫通穴５０内を挿通する。この後、制御回路基板１１（図１参照）を蓋板５に固定すると共に、信号端子を制御回路基板１１に接続する。 As shown in FIG. 11, the first protrusion 61 and the signal terminal 21 protrude from the end face 415 of the side wall 41 outward in the Z direction before the cover plate 5 is fixed. After this state, the cover plate 5 (see FIG. 1) is used to close the opening 400 and the cover plate 5 is fixed to the frame 4. For example, the lid plate 5 is caulked and fixed to the end surface 415 of the side wall portion 41. When the lid plate 5 is disposed in the opening 400 of the frame 4, first, the lid plate 5 is pressed toward the frame 4 side so as to contact the end surface 415. At this time, as shown in FIG. 13, the cover plate 5 comes into contact with the apex 616 of the arcuate portion 612. Then, the arc-shaped portion 612 is pressed toward the cooling pipe 3 in the Z direction. Then, the arc-shaped portion 612 is bent at the tip 615 of the plate-shaped portion 611. Thereby, the 1st protrusion 61 is crushed. Further, the signal terminal 21 is inserted through the through hole 50 of the cover plate 5. Thereafter, the control circuit board 11 (see FIG. 1) is fixed to the cover plate 5 and the signal terminals are connected to the control circuit board 11.

本例の作用効果について説明する。本例の電力変換装置１は、図１に示すごとく、蓋板５と底壁部４０との間で積層体１０をＺ方向に挟持しているため、積層体１０の、Ｚ方向における振動を抑制できる。しかも、本例では第１突部６１が圧潰された状態で積層体１０を挟持しているため、第１突部６１において積層体１０を蓋板５に密着させることができる。また、積層体１０の、第１突部６１を設けた側面３４とは反対側の側面３５も、底壁部４０に密着させることができる。そのため、蓋板５と底壁部４０との間で積層体１０のＺ方向へのガタ量が少なくなり、積層体１０をＺ方向にしっかりと挟持することが可能になる。これにより、積層体１０の、Ｚ方向における耐振性を高めることができる。 The effect of this example will be described. As shown in FIG. 1, the power conversion device 1 of the present example holds the laminate 10 in the Z direction between the cover plate 5 and the bottom wall portion 40, and therefore the laminate 10 vibrates in the Z direction. Can be suppressed. In addition, in this example, since the stacked body 10 is sandwiched in a state where the first protrusion 61 is crushed, the stacked body 10 can be brought into close contact with the cover plate 5 at the first protrusion 61. Further, the side surface 35 of the laminated body 10 opposite to the side surface 34 provided with the first protrusions 61 can also be brought into close contact with the bottom wall portion 40. Therefore, the backlash amount in the Z direction of the laminated body 10 is reduced between the cover plate 5 and the bottom wall portion 40, and the laminated body 10 can be firmly held in the Z direction. Thereby, the vibration resistance in the Z direction of the laminated body 10 can be improved.

また、本例の積層体１０は、側壁部４１によってＹ方向に挟持されている。そして、冷却管３に形成した一対の第２突部６２が、圧潰された状態で側壁部４１にそれぞれ当接している。
このようにすると、積層体１０は、側壁部４１によってＹ方向にも挟持されているため、Ｙ方向における積層体１０の振動を抑制できる。しかも、本例では一対の第２突部６２が側壁部４１によって圧潰された状態で、積層体１０を挟持しているため、第２突部６２において積層体１０と側壁部４１とを密着させることができる。そのため、収納空間Ｓ内において積層体１０のＹ方向へのガタ量が少なくなり、積層体１０の、Ｙ方向における耐振性をも高めることが可能になる。すなわち、Ｚ方向及びＹ方向の双方について、積層体１０の耐振性を高めることができる。 Further, the laminated body 10 of this example is sandwiched in the Y direction by the side wall portion 41. And a pair of 2nd protrusion 62 formed in the cooling pipe 3 is contact | abutted to the side wall part 41 in the state where it was crushed, respectively.
If it does in this way, since the laminated body 10 is clamped also in the Y direction by the side wall part 41, the vibration of the laminated body 10 in a Y direction can be suppressed. In addition, in this example, the stacked body 10 is sandwiched in a state in which the pair of second protrusions 62 is crushed by the side wall 41, so the stacked body 10 and the side wall 41 are brought into close contact with each other at the second protrusion 62. be able to. Therefore, the backlash amount in the Y direction of the stacked body 10 in the storage space S is reduced, and the vibration resistance of the stacked body 10 in the Y direction can be increased. That is, the vibration resistance of the stacked body 10 can be enhanced in both the Z direction and the Y direction.

また、図５に示すごとく、一対の第２突部６２の側部にはそれぞれテーパ面６９が形成されている。Ｙ方向における一対のテーパ面６９ａ，６９ｂ間の間隔は、Ｚ方向において底壁部４０から遠ざかるほど広くなっている。そして、Ｙ方向における一対のテーパ面６９ａ，６９ｂ間の間隔が狭い側から、冷却管３をフレーム４内に収容している。
このようにすると、冷却管３をフレーム４内に収容する工程（流路形成部材収容工程）を行いやすくなる。 Further, as shown in FIG. 5, tapered surfaces 69 are respectively formed on the side portions of the pair of second protrusions 62. The distance between the pair of tapered surfaces 69a and 69b in the Y direction increases as the distance from the bottom wall portion 40 increases in the Z direction. And the cooling pipe 3 is accommodated in the flame | frame 4 from the side where the space | interval between a pair of taper surfaces 69a and 69b in a Y direction is narrow.
If it does in this way, it will become easy to perform the process (channel formation member accommodation process) of accommodating cooling pipe 3 in frame 4.

また、本例では図１に示すごとく、半導体モジュール２の信号端子２１（電極端子）が、金属製の蓋板５の貫通穴５０を貫通している。第１突部６１は、Ｙ向における貫通穴５０の両側に配置されている。貫通穴５０の両側における一対の第１突部６１ａ，６１ｂの間隔Ｗ１は、Ｙ方向における半導体モジュール２の幅Ｗ２よりも長い。
このようにすると、一対の第１突部６１ａ，６１ｂの間に介在する貫通穴５０の、Ｙ方向における幅をも広くすることができる。そのため、半導体モジュール２の信号端子２１（電極端子）が、貫通穴５０の内面に接触する不具合を防止しやすくなる。
なお、本例では、信号端子２１が貫通穴５０を貫通しているが、パワー端子２２が貫通穴５０を貫通するように構成した場合も、同様の効果を奏する。 In this example, as shown in FIG. 1, the signal terminal 21 (electrode terminal) of the semiconductor module 2 passes through the through hole 50 of the metal lid plate 5. The first protrusions 61 are disposed on both sides of the through hole 50 in the Y direction. The interval W1 between the pair of first protrusions 61a and 61b on both sides of the through hole 50 is longer than the width W2 of the semiconductor module 2 in the Y direction.
In this case, the width in the Y direction of the through hole 50 interposed between the pair of first protrusions 61a and 61b can be increased. Therefore, it is easy to prevent a problem that the signal terminal 21 (electrode terminal) of the semiconductor module 2 contacts the inner surface of the through hole 50.
In addition, in this example, although the signal terminal 21 has penetrated the through-hole 50, the same effect is produced also when it comprises so that the power terminal 22 may penetrate the through-hole 50. FIG.

また、本例では図５〜図９に示すごとく、流路形成部材収容工程（図５〜図７参照）と、モジュール保持工程（図８参照）と、位置合わせ工程（図９参照）と、押し出し工程（図９参照）とを行う。位置合わせ工程では、図９に示すごとく、位置決め治具７に形成した被係合部７０を第１突部６１に係合させることにより、複数の冷却管３に対して位置決め治具７を位置合わせする。
このようにすると、第１突部６１を使って位置合わせ工程を行えるため、位置合わせ工程を行うための専用の突部を、冷却管３に設ける必要がなくなる。 Moreover, in this example, as shown in FIGS. 5 to 9, the flow path forming member accommodation step (see FIGS. 5 to 7), the module holding step (see FIG. 8), the alignment step (see FIG. 9), An extrusion process (see FIG. 9) is performed. In the positioning step, as shown in FIG. 9, the positioning jig 7 is positioned with respect to the plurality of cooling pipes 3 by engaging the engaged portion 70 formed on the positioning jig 7 with the first protrusion 61. Match.
If it does in this way, since an alignment process can be performed using the 1st protrusion 61, it becomes unnecessary to provide the cooling pipe 3 with the protrusion for exclusive use for performing an alignment process.

以上のごとく、本例によれば、耐振性に優れた積層体１０を備えた電力変換装置１を提供することができる。 As mentioned above, according to this example, the power converter device 1 provided with the laminated body 10 excellent in vibration resistance can be provided.

（実施例２）
本例は、図１４に示すごとく、冷却管３に第３突部６３を設けた例である。本例の冷却管３は、実施例１と同様に、それぞれ２個の第１突部６１及び第２突部６２を備える。本例の冷却管３は、これら第１突部６１と第２突部６２に加えて、２個の第３突部６３を備える。２個の第３突部６３は、Ｚ方向において、第１突部６１とは反対側に突出している。また、２個の第３突部６３は、Ｙ方向において、半導体モジュール２の両側に位置している。２個の第３突部６３のうち、一方の第３突部６３ａは、第１突部６１（図４参照）と同様の形状をしている。一方の第３突部６３ａは、圧潰した状態で底壁部４２に当接している。 (Example 2)
In this example, as shown in FIG. 14, the third protrusion 63 is provided on the cooling pipe 3. As in the first embodiment, the cooling pipe 3 of this example includes two first protrusions 61 and second protrusions 62. The cooling pipe 3 of this example includes two third protrusions 63 in addition to the first protrusions 61 and the second protrusions 62. The two third protrusions 63 protrude on the opposite side to the first protrusion 61 in the Z direction. The two third protrusions 63 are located on both sides of the semiconductor module 2 in the Y direction. Of the two third protrusions 63, one third protrusion 63a has the same shape as the first protrusion 61 (see FIG. 4). One third protrusion 63a is in contact with the bottom wall 42 in a crushed state.

また、図１５に示すごとく、他方の第３突部６３ｂには切欠部６３０が形成されている。この切欠部６３０が、底壁部４２に形成した底壁側貫通穴４５に係合している。他方の第３突部６３ｂの一部６３５は、底壁側貫通穴４５内に位置し、底壁側貫通穴４５の内面４２５に密着している。
その他、実施例１と同様の構成を備える。 Further, as shown in FIG. 15, a notch 630 is formed in the other third protrusion 63b. The notch 630 engages with the bottom wall side through hole 45 formed in the bottom wall portion 42. A part 635 of the other third protrusion 63 b is located in the bottom wall side through hole 45 and is in close contact with the inner surface 425 of the bottom wall side through hole 45.
In addition, the same configuration as that of the first embodiment is provided.

本例の作用効果について説明する。本例では、第３突部６３ｂに形成した切欠部６３０が、底壁部４２に形成した底壁側貫通穴４５に係合している。第３突部６３ｂの一部は、底壁側貫通穴４５内に位置し、底壁側貫通穴４５の内面４２５に密着している。
このようにすると、第３突部６３ｂによって、積層体１０のＹ方向への耐振性をも向上させることができる。
その他、実施例１と同様の作用効果を備える。 The effect of this example will be described. In this example, the notch 630 formed in the third protrusion 63 b is engaged with the bottom wall side through hole 45 formed in the bottom wall 42. A part of the third protrusion 63 b is located in the bottom wall side through hole 45 and is in close contact with the inner surface 425 of the bottom wall side through hole 45.
If it does in this way, the vibration resistance to the Y direction of the laminated body 10 can also be improved with the 3rd protrusion 63b.
In addition, the same functions and effects as those of the first embodiment are provided.

なお、実施例１、実施例２では、冷媒流路３０を冷却管３によって形成し、該冷却管３を半導体モジュール２に接触させたが、本発明の電力変換装置は、これに限られるものではない。すなわち、例えば図１６に示すごとく、半導体モジュール２に直接、冷媒１５が接触するように冷媒流路３０を設けることもできる。図１６の例では、半導体素子を内蔵した半導体モジュール２の本体部２０を、積層方向（Ｘ方向）に直交する方向から間に空間を設けつつ囲むと共に、本体部２０よりも積層方向（Ｘ方向）の幅の大きい枠体８０を本体部２０と一体に備えた冷却器一体型半導体モジュール８を積層することで、半導体モジュール２と冷媒流路３０とが積層される構造にしてある。 In Example 1 and Example 2, the refrigerant flow path 30 is formed by the cooling pipe 3, and the cooling pipe 3 is brought into contact with the semiconductor module 2. However, the power conversion device of the present invention is limited to this. is not. That is, for example, as shown in FIG. 16, the coolant channel 30 can be provided so that the coolant 15 is in direct contact with the semiconductor module 2. In the example of FIG. 16, the main body 20 of the semiconductor module 2 incorporating a semiconductor element is surrounded with a space from a direction orthogonal to the stacking direction (X direction), and more than the main body 20 in the stacking direction (X direction). The semiconductor module 2 and the refrigerant flow path 30 are stacked by stacking the cooler-integrated semiconductor module 8 that is integrally provided with the main body 20 with the frame 80 having a large width.

また、実施例１、２では、第１突部６１は蓋板５側に突出しているが、底壁部４０側に突出していてもよい。また、実施例１、２では、信号端子２１は蓋板５側に突出し、パワー端子２２は蓋板５の反対側に突出しているが、これら信号端子２１とパワー端子２２の突出方向を逆にしてもよい。 In the first and second embodiments, the first protrusion 61 protrudes toward the cover plate 5, but may protrude toward the bottom wall 40. In the first and second embodiments, the signal terminal 21 protrudes to the cover plate 5 side and the power terminal 22 protrudes to the opposite side of the cover plate 5. However, the protruding directions of the signal terminal 21 and the power terminal 22 are reversed. May be.

１電力変換装置
２半導体モジュール
２１電極端子
３流路形成部材（冷却管）
３０冷媒流路
４フレーム
４０底壁部
４１側壁部
５蓋板
６１第１突部
６２第２突部 DESCRIPTION OF SYMBOLS 1 Power converter 2 Semiconductor module 21 Electrode terminal 3 Flow path formation member (cooling pipe)
30 Refrigerant flow path 4 Frame 40 Bottom wall portion 41 Side wall portion 5 Cover plate 61 First protrusion 62 Second protrusion

Claims

A laminated body in which a plurality of semiconductor modules each including a switching element and a plurality of refrigerant flow paths through which a refrigerant for cooling the semiconductor modules flows;
A frame for holding the laminate,
The frame includes a bottom wall portion and a side wall portion erected from the bottom wall portion in the thickness direction of the bottom wall portion, and the laminate is formed in a storage space formed inside the side wall portion. Is stored, and the laminated body is supported on the bottom wall portion,
A lid plate is fixed to the frame so as to close an opening for storing the laminate in the storage space,
The laminated body includes a flow path forming member having the refrigerant flow path therein, and a first protruding from the flow path forming member toward the lid plate side or the bottom wall side in the plate thickness direction. Has a protrusion,
The laminate is sandwiched between the lid plate and the bottom wall portion in the plate thickness direction, and the first protrusion is crushed in the plate thickness direction, and the lid plate or the bottom wall In contact with the part ,
The first protrusion protruding from the flow path forming member is pressed toward the flow path forming member in the thickness direction by the lid plate or the bottom wall, and the tip of the first protrusion is crushed. A power converter characterized by comprising:

  A laminated body in which a plurality of semiconductor modules each including a switching element and a plurality of refrigerant flow paths through which a refrigerant for cooling the semiconductor modules flows;
  A frame for holding the laminate,
  The frame includes a bottom wall portion and a side wall portion erected from the bottom wall portion in the thickness direction of the bottom wall portion, and the laminate is formed in a storage space formed inside the side wall portion. Is stored, and the laminated body is supported on the bottom wall portion,
  A lid plate is fixed to the frame so as to close an opening for storing the laminate in the storage space,
  The laminated body includes a flow path forming member having the refrigerant flow path therein, and a first protruding from the flow path forming member toward the lid plate side or the bottom wall side in the plate thickness direction. Has a protrusion,
  The laminate is sandwiched between the lid plate and the bottom wall portion in the plate thickness direction, and the first protrusion is crushed in the plate thickness direction, and the lid plate or the bottom wall In contact with the part,
  The lid plate is a rigid member, the lid plate has a through-hole penetrating in the plate thickness direction, the semiconductor module has an electrode terminal, the electrode terminal penetrates the through-hole, The first protrusions are disposed on both sides of the through hole in the width direction perpendicular to both the stacking direction of the laminate and the plate thickness direction, and the distance between the pair of first protrusions on both sides of the through hole. Is longer than the width of the semiconductor module in the width direction.

3. The power conversion device according to claim 1 , wherein the stacked body is opposite to each other from the flow path forming member in a width direction orthogonal to both the stacking direction of the stacked body and the plate thickness direction. A pair of second protrusions protruding to the side, the stacked body is sandwiched in the width direction by the side wall in the storage space, and the pair of second protrusions is in a crushed state A power converter, wherein the power converter is in contact with each side wall.

4. The power conversion device according to claim 3 , wherein a side surface of the pair of second protrusions is formed with a tapered surface, and a distance between the pair of taper surfaces in the width direction is the bottom wall portion. The power converter is characterized in that it gradually becomes wider toward the lid plate, and a portion of the second protrusion on the lid plate side in the plate thickness direction is crushed by the side wall portion.

A method for manufacturing a power converter, wherein the power converter is
A laminated body in which a plurality of semiconductor modules each including a switching element and a plurality of refrigerant flow paths through which a refrigerant for cooling the semiconductor modules flows;
A frame for holding the laminate,
The frame includes a bottom wall portion and a side wall portion erected from the bottom wall portion in the thickness direction of the bottom wall portion, and the laminate is formed in a storage space formed inside the side wall portion. Is stored, and the laminated body is supported on the bottom wall portion,
A lid plate is fixed to the frame so as to close an opening for storing the laminate in the storage space,
The laminated body includes a flow path forming member having the refrigerant flow path therein, and a first protruding from the flow path forming member toward the lid plate side or the bottom wall side in the plate thickness direction. Has a protrusion,
The laminate is sandwiched between the lid plate and the bottom wall portion in the plate thickness direction, and the first protrusion is crushed in the plate thickness direction, and the lid plate or the bottom wall In contact with the part,
A flow path forming member accommodating step for accommodating the plurality of flow path forming members in the frame with a predetermined interval therebetween, and a plurality of the semiconductor modules held by the positioning jig with a predetermined interval therebetween. A module holding step, the positioning jig holding the plurality of semiconductor modules is brought close to the flow path forming member, and the engaged portion formed on the positioning jig and the first protrusion are engaged. An alignment step of aligning the plurality of semiconductor modules with respect to the plurality of flow path forming members in the stacking direction and the width direction, and positioning the plurality of semiconductor modules in the aligned state. And an extrusion process of extruding the semiconductor module between the individual flow path forming members. The method of production.

A method for manufacturing the power conversion device according to any one of claims 1 to 4,
A laminated body accommodation step of accommodating the laminated body in the frame in a state where the first protrusion faces the opening side or the bottom wall side of the frame;
By fixing the cover plate so as to close the opening of the frame, the first protrusion is crushed in the thickness direction of the bottom wall portion, and the lamination is performed between the cover plate and the bottom wall portion. A laminated body holding step of holding and holding the body in the plate thickness direction;
The manufacturing method of the power converter device characterized by performing.