JP5680093B2 - 電極を有するcvd装置 - Google Patents
電極を有するcvd装置 Download PDFInfo
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- JP5680093B2 JP5680093B2 JP2012533340A JP2012533340A JP5680093B2 JP 5680093 B2 JP5680093 B2 JP 5680093B2 JP 2012533340 A JP2012533340 A JP 2012533340A JP 2012533340 A JP2012533340 A JP 2012533340A JP 5680093 B2 JP5680093 B2 JP 5680093B2
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- electrode
- outer coating
- disposed
- contact region
- coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
本特許出願は、2009年10月9日に出願した米国仮特許出願第61/250,317号の優先権を含めたすべての利益を主張するものである。当該仮特許出願の開示内容全体を参照により本明細書に援用するものとする。
Claims (10)
- 互いに離間された第1の端部および第2の端部を有し該端部のそれぞれにソケットが配設されたキャリア体上に材料を蒸着するための製造装置であり、
チャンバを画定するハウジングと、
前記ハウジング内に通じるように画定され、前記チャンバ内に気体を導入するための入口と、
前記ハウジング内に通じるように画定され、前記気体を前記チャンバから排出するための出口と、
外面を有する少なくとも1つの電極であって、前記ハウジングを貫通して配設され、前記ソケットと結合されるように少なくとも部分的に前記チャンバ内に配設される電極と、
前記電極と結合され、前記電極に電流を供給するための電源装置と、
前記電極の前記外面上に直接配設され、室温下で少なくとも7×106ジーメンス/メートルの導電率を有する第1の外部コーティングと、
前記第1の外部コーティングと異なり、前記第1の外部コーティング上に直接配設される第2の外部コーティングと、
を備える製造装置。 - 前記第1の外部コーティングは、ニッケル、金、白金、パラジウム、銀、クロムおよびこれらの組合せからなる群から選択される金属を含む請求項1に記載の製造装置。
- 前記第2の外部コーティングは、ASTM G99‐5に従って測定した耐摩耗性(測定単位:mm3/N・m)が前記第1の外部コーティングより大きい請求項1または2に記載の製造装置。
- 前記外面は、前記ソケットと接触するように適合されたコンタクト領域を有し、前記第1の外部コーティングは、前記電極の前記コンタクト領域上に配設され、前記第2の外部コーティングは、前記コンタクト領域上の前記第1の外部コーティング上に配設される請求項1〜3のいずれか一項に記載の製造装置。
- 前記外面は、前記ソケットと接触するように適合されたコンタクト領域を有し、前記第1の外部コーティングは、前記コンタクト領域の外側の前記電極上に配設され、前記第2の外部コーティングは、前記第1の外部コーティング上の、前記コンタクト領域の外側に配設される請求項1〜3のいずれか一項に記載の製造装置。
- 互いに離間された第1の端部および第2の端部を有し該端部のそれぞれにソケットが配設されたキャリア体上に材料を蒸着するための製造装置と共に使用される電極であり、該電極の外面には、
前記電極の前記外面上に直接配設され、室温下で少なくとも7×106ジーメンス/メートルの導電率を有する第1の外部コーティングと、
前記第1の外部コーティングと異なり、前記第1の外部コーティング上に直接配設される第2の外部コーティングと
が設けられることを特徴とする電極。 - 前記第1の外部コーティングは、ニッケル、金、白金、パラジウム、銀、クロムおよびこれらの組合せからなる群から選択される金属を含む請求項6に記載の電極。
- 前記第2の外部コーティングは、前記第1の外部コーティングより大きい耐摩耗性(測定単位:mm3/N・m)を有する請求項6または7に記載の電極。
- 前記電極はカップを画定し、該カップの側壁上にコンタクト領域が配置され、前記カップの底部上に前記第2の外部コーティングが存在する場合は、該底部上の前記第2の外部コーティングと、前記カップの前記側壁上の前記第2の外部コーティングとが異なる請求項6〜8のいずれか一項に記載の電極。
- 前記外面は、前記ソケットと接触するように適合されたコンタクト領域を有し、前記第1の外部コーティングは、前記コンタクト領域の外側の前記電極上に配設され、前記第2の外部コーティングは、前記第1の外部コーティング上の、前記コンタクト領域の外側に配設される請求項6〜9のいずれか一項に記載の電極。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25031709P | 2009-10-09 | 2009-10-09 | |
US61/250,317 | 2009-10-09 | ||
PCT/US2010/051945 WO2011044441A1 (en) | 2009-10-09 | 2010-10-08 | Cvd apparatus with electrode |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013507522A JP2013507522A (ja) | 2013-03-04 |
JP5680093B2 true JP5680093B2 (ja) | 2015-03-04 |
Family
ID=43259892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012533340A Expired - Fee Related JP5680093B2 (ja) | 2009-10-09 | 2010-10-08 | 電極を有するcvd装置 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20120192791A1 (ja) |
EP (1) | EP2486165A1 (ja) |
JP (1) | JP5680093B2 (ja) |
KR (1) | KR20120085276A (ja) |
CN (1) | CN102666915B (ja) |
CA (1) | CA2777097A1 (ja) |
RU (1) | RU2012114735A (ja) |
TW (1) | TW201129501A (ja) |
WO (1) | WO2011044441A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
KR101210759B1 (ko) | 2012-06-11 | 2012-12-11 | 서경수 | 폴리실리콘 제조용 전극봉 |
JP2015527490A (ja) * | 2012-07-10 | 2015-09-17 | ヘムロック・セミコンダクター・コーポレーション | 材料を蒸着するための製造機器、その中で使用するための受け口、受け口の製造方法及び担体上に材料を蒸着する方法 |
CN107986285B (zh) * | 2017-12-05 | 2018-11-20 | 亚洲硅业(青海)有限公司 | 一种还原炉底盘及其涂层制备方法 |
US20240071729A1 (en) * | 2022-08-26 | 2024-02-29 | Applied Materials, Inc. | Gas cooled high power connection rod |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3406044A (en) * | 1965-01-04 | 1968-10-15 | Monsanto Co | Resistance heating elements and method of conditioning the heating surfaces thereof |
IT1246772B (it) * | 1989-12-26 | 1994-11-26 | Advanced Silicon Materials Inc | ''mandrino di grafite avente uno strato esterno di rivestimento __impermeabile all'idrogeno'' |
DE10101040A1 (de) * | 2001-01-11 | 2002-07-25 | Wacker Chemie Gmbh | Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes |
US6623801B2 (en) * | 2001-07-30 | 2003-09-23 | Komatsu Ltd. | Method of producing high-purity polycrystalline silicon |
JP2005272965A (ja) * | 2004-03-25 | 2005-10-06 | Sumitomo Heavy Ind Ltd | 電極部材、及びこれを備えた成膜装置 |
JP4031782B2 (ja) * | 2004-07-01 | 2008-01-09 | 株式会社大阪チタニウムテクノロジーズ | 多結晶シリコン製造方法およびシード保持電極 |
DE102005002904A1 (de) * | 2005-01-21 | 2006-07-27 | Abb Patent Gmbh | Elektrode in einem Messrohr eines magnetisch-induktiven Durchflussmessers |
JP2006240934A (ja) * | 2005-03-04 | 2006-09-14 | Tokuyama Corp | 多結晶シリコンの製造装置 |
JP4905638B2 (ja) * | 2005-10-11 | 2012-03-28 | 三菱マテリアル株式会社 | 電極の短絡防止方法および短絡防止板 |
US20100101494A1 (en) * | 2008-10-28 | 2010-04-29 | Hsieh Jui Hai Harry | Electrode and chemical vapor deposition apparatus employing the electrode |
-
2010
- 2010-10-08 CN CN201080051679.7A patent/CN102666915B/zh not_active Expired - Fee Related
- 2010-10-08 EP EP10771249A patent/EP2486165A1/en not_active Withdrawn
- 2010-10-08 JP JP2012533340A patent/JP5680093B2/ja not_active Expired - Fee Related
- 2010-10-08 CA CA2777097A patent/CA2777097A1/en not_active Abandoned
- 2010-10-08 KR KR1020127011552A patent/KR20120085276A/ko not_active Application Discontinuation
- 2010-10-08 WO PCT/US2010/051945 patent/WO2011044441A1/en active Application Filing
- 2010-10-08 TW TW099134503A patent/TW201129501A/zh unknown
- 2010-10-08 US US13/500,424 patent/US20120192791A1/en not_active Abandoned
- 2010-10-08 RU RU2012114735/02A patent/RU2012114735A/ru not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
CN102666915B (zh) | 2014-04-23 |
US20120192791A1 (en) | 2012-08-02 |
EP2486165A1 (en) | 2012-08-15 |
WO2011044441A1 (en) | 2011-04-14 |
TW201129501A (en) | 2011-09-01 |
CA2777097A1 (en) | 2011-04-14 |
RU2012114735A (ru) | 2013-11-20 |
JP2013507522A (ja) | 2013-03-04 |
CN102666915A (zh) | 2012-09-12 |
KR20120085276A (ko) | 2012-07-31 |
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