JP5679386B1 - レーザ光源装置、及び検査装置 - Google Patents
レーザ光源装置、及び検査装置 Download PDFInfo
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- 238000007689 inspection Methods 0.000 title claims abstract description 58
- 239000013078 crystal Substances 0.000 claims description 35
- 239000000835 fiber Substances 0.000 claims description 15
- 229910009372 YVO4 Inorganic materials 0.000 claims description 3
- 239000007787 solid Substances 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 description 26
- 238000001228 spectrum Methods 0.000 description 22
- 238000005286 illumination Methods 0.000 description 14
- 238000000862 absorption spectrum Methods 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
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- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/354—Third or higher harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
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- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Lasers (AREA)
Abstract
Description
本実施形態の一態様にかかる検査装置は、上記のレーザ光源装置と、前記レーザ光源装置で発生した第6高調波によって照明された試料を撮像する光検出器と、を備えたものである。この構成では、バキュームタイトな構成とする必要がないため、装置構成を簡素化することができる。
101 偏光ビームスプリッタ
102a ミラー
102b ミラー
103a λ/4板
103b λ/4板
104 コンデンサーレンズ
106 マスク
106a ペリクルフレーム
106b マスク基板
106c ペリクル
106d パターン面
106e パターン
107 偏光ビームスプリッタ
108 対物レンズ
109 投影レンズ
110 カメラ
111 本体カバー
200 光源装置
L11〜L19 レーザ光
201 基本波発生手段
202 LBO結晶
203 BBO結晶
204 RBBF結晶
205 第6高調波発生手段
Claims (8)
- 1064.326nm〜1064.511nmに含まれる波長を中心波長とする基本波のレーザ光を発振する、繰り返し周波数が1MHz以上のQCW(Quasi-CW)の固体レーザと、
前記固体レーザから取り出されるパルスレーザ光の第6高調波を発生させる手段と、を備えたレーザ光源装置。 - 1064.757nm〜1064.852nmに含まれる波長を中心波長とする基本波のレーザ光を発振する、繰り返し周波数が1MHz以上のQCW(Quasi-CW)の固体レーザと、
前記固体レーザから取り出されるパルスレーザ光の第6高調波を発生させる手段と、を備えたレーザ光源装置。 - 1063.805nm〜1063.878nmに含まれる波長を中心波長とする基本波のレーザ光を発振する、繰り返し周波数が1MHz以上のQCW(Quasi-CW)の固体レーザと、
前記固体レーザから取り出されるパルスレーザ光の第6高調波を発生させる手段と、を備えたレーザ光源装置。 - 1063.962nm〜1064.031nmに含まれる波長を中心波長とする基本波のレーザ光を発振する、繰り返し周波数が1MHz以上のQCW(Quasi-CW)の固体レーザと、
前記固体レーザから取り出されるパルスレーザ光の第6高調波を発生させる手段と、を備えたレーザ光源装置。 - 前記パルスレーザ光のパルス幅が2ピコ秒以上である請求項1〜4のいずれか1項に記載のレーザ光源装置。
- 前記固体レーザとして、Ybドープのファイバレーザ、Nd:YVO4結晶を用いたモードロック型固体レーザ、又はNd:YAG結晶を用いたモードロック型固体レーザを用いる請求項1〜5のいずれか1項に記載のレーザ光源装置。
- 請求項1〜6のいずれか1項に記載のレーザ光源装置と、
前記レーザ光源装置で発生した第6高調波によって照明された試料を撮像する光検出器と、を備えた検査装置。 - 前記光検出器がTDIカメラである請求項7の検査装置。
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JP2014032676A JP5679386B1 (ja) | 2014-02-24 | 2014-02-24 | レーザ光源装置、及び検査装置 |
US14/626,005 US9991670B2 (en) | 2014-02-24 | 2015-02-19 | Laser light source device and inspection device |
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JP2014032676A JP5679386B1 (ja) | 2014-02-24 | 2014-02-24 | レーザ光源装置、及び検査装置 |
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JP5679386B1 true JP5679386B1 (ja) | 2015-03-04 |
JP2015158562A JP2015158562A (ja) | 2015-09-03 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US9068917B1 (en) * | 2006-03-14 | 2015-06-30 | Kla-Tencor Technologies Corp. | Systems and methods for inspection of a specimen |
JP6698453B2 (ja) * | 2016-07-13 | 2020-05-27 | 株式会社ディスコ | 波長変換装置 |
WO2021038856A1 (ja) * | 2019-08-30 | 2021-03-04 | ギガフォトン株式会社 | レーザ装置、レーザ加工システム及び電子デバイスの製造方法 |
TWI722716B (zh) * | 2019-12-13 | 2021-03-21 | 南臺學校財團法人南臺科技大學 | 光罩之保護膜的全域動態檢測方法及全域動態檢測系統 |
Citations (4)
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JP2001525946A (ja) * | 1997-05-16 | 2001-12-11 | エクセル クオントロニクス コープ. | ハイパワーレーザにおけるイントラキャビティ及びインタキャビティ高調波発生 |
JP2005033104A (ja) * | 2003-07-10 | 2005-02-03 | Gigaphoton Inc | 2ステージレーザ用波長検出装置及びその校正装置 |
JP2010054547A (ja) * | 2008-08-26 | 2010-03-11 | Lasertec Corp | 紫外レーザ装置 |
WO2013043842A1 (en) * | 2011-09-23 | 2013-03-28 | Kla-Tencor Corporation | Solid-state laser and inspection system using 193nm laser |
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JP2005354032A (ja) * | 2004-05-12 | 2005-12-22 | Canon Inc | 分布ブラッグ反射型半導体レーザの制御方法および画像投影装置 |
US7593440B2 (en) * | 2005-03-29 | 2009-09-22 | Coherent, Inc. | MOPA laser apparatus with two master oscillators for generating ultraviolet radiation |
US7731795B2 (en) * | 2005-12-02 | 2010-06-08 | Clemson University | Rhombohedral fluoroberyllium borate crystals and hydrothermal growth thereof for use in laser and non-linear optical applications and devices |
WO2008034283A1 (fr) * | 2006-09-15 | 2008-03-27 | Technical Institute Of Physics And Chemistry Chinese Academy Of Sciences | Cristal optique non linéaire de sel de fluorure de béryllium-borate, son procédé de tirage et ses utilisations |
JP2008152116A (ja) * | 2006-12-19 | 2008-07-03 | Lasertec Corp | 照明装置、及び照明方法 |
JP5721252B2 (ja) * | 2009-08-10 | 2015-05-20 | 日本碍子株式会社 | 電磁波発振素子 |
US9318870B2 (en) * | 2011-05-06 | 2016-04-19 | Kla-Tencor Corporation | Deep ultra-violet light sources for wafer and reticle inspection systems |
US20130313440A1 (en) * | 2012-05-22 | 2013-11-28 | Kla-Tencor Corporation | Solid-State Laser And Inspection System Using 193nm Laser |
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- 2014-02-24 JP JP2014032676A patent/JP5679386B1/ja active Active
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- 2015-02-19 US US14/626,005 patent/US9991670B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001525946A (ja) * | 1997-05-16 | 2001-12-11 | エクセル クオントロニクス コープ. | ハイパワーレーザにおけるイントラキャビティ及びインタキャビティ高調波発生 |
JP2005033104A (ja) * | 2003-07-10 | 2005-02-03 | Gigaphoton Inc | 2ステージレーザ用波長検出装置及びその校正装置 |
JP2010054547A (ja) * | 2008-08-26 | 2010-03-11 | Lasertec Corp | 紫外レーザ装置 |
WO2013043842A1 (en) * | 2011-09-23 | 2013-03-28 | Kla-Tencor Corporation | Solid-state laser and inspection system using 193nm laser |
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US9991670B2 (en) | 2018-06-05 |
US20150244142A1 (en) | 2015-08-27 |
JP2015158562A (ja) | 2015-09-03 |
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