JP5656019B2 - Film forming device - Google Patents

Description

  The present invention relates to a film forming apparatus used for forming a film such as an amorphous carbon film on a plate-shaped workpiece, and more particularly to a film forming apparatus suitable for mass production of a workpiece having a film.

  As this type of film forming apparatus, for example, there is an apparatus described in Patent Document 1. The apparatus described in Patent Document 1 is an inline-type apparatus that continuously performs vacuum processing on one side of a substrate, and includes a plurality of vacuum processing chambers that are linearly connected, and a plurality of vacuum processing that holds a substrate. A plurality of carriers sequentially transported to the chamber are provided, and the vacuum processing is performed by sequentially transporting the substrates to each vacuum processing chamber in two rows. Patent Document 1 describes performing film formation by sputtering on the surface of a substrate as a vacuum treatment. Further, the above apparatus includes a spare chamber between the vacuum processing chambers in order to adjust the processing time in each vacuum processing chamber.

Japanese Patent No. 4417734

  By the way, in order to form a film by sputtering on the substrate using the above-described apparatus, at least a vacuum processing chamber containing the substrate is evacuated to remove impurities in the chamber, and the vacuum processing chamber is heated. It is necessary to go through a process of removing moisture in the room, a process of forming a film on the substrate by ionizing an inert gas and causing it to collide with the target to form a film on the substrate, and a process of cooling the substrate Yes, as a matter of course, the processing time of each process is different.

  However, the conventional apparatus as described above has a structure in which a plurality of vacuum processing chambers are linearly arranged and the substrates are sequentially transferred to the plurality of vacuum processing chambers (processes). Therefore, it is essential to provide a spare chamber to adjust the difference in processing time. As a result, the conventional apparatus has a problem that the entire structure is enlarged, and it is difficult to reduce the manufacturing cost and the tact time, and it is a problem to solve such a problem.

  The present invention has been made paying attention to the above-described conventional problems, and an object thereof is to provide a film forming apparatus capable of realizing a reduction in manufacturing cost and a reduction in tact time.

  The film forming apparatus of the present invention is an apparatus that forms a film on the surface of a plate-like workpiece by sputtering. The film forming apparatus includes a plurality of vacuum chambers arranged at predetermined intervals, a chamber transfer means for moving these vacuum chambers in the arrangement direction, and a vacuum exhaust means for evacuating the inside of the vacuum chamber containing the workpiece. ing.

  In the coating film forming apparatus, each vacuum chamber applies a high voltage to the work jig, a sputtering target, an inert gas introduction means for introducing an inert gas, and a target for holding the workpiece therein. The voltage application means is provided, and the structure serves as means for solving the conventional problems.

  In the above configuration, in a vacuum atmosphere into which an inert gas is introduced, a glow discharge is generated by applying a high voltage using the target as a cathode, and the atoms and molecules of the target are ionized and collided with the target. The film is formed on the work. At this time, in order to increase the energy amount of the target atoms and molecules to be blown off, a magnetic circuit is formed on the back surface of the target to form a non-equilibrium magnetic field that intentionally breaks the balance of the magnetic force by increasing the magnetic force of the outer magnetic pole from the inner side. It has. In addition, it is possible to irradiate the workpiece with ions of an inert gas whose energy is controlled by a bias voltage applied to the workpiece during film formation, thereby increasing the amount of energy of atoms and molecules of the target. Properties can be controlled.

  According to the film forming apparatus of the present invention, in an apparatus for forming a film by sputtering on the surface of a plate-like workpiece, it is possible to realize a reduction in manufacturing cost and a reduction in tact time.

It is the top view (A) explaining one Embodiment of the film formation apparatus of this invention, and sectional drawing (B) of a vacuum chamber. It is sectional drawing explaining the vacuum chamber in other embodiment of the film forming apparatus of this invention. It is sectional drawing explaining the vacuum chamber in further another embodiment of the film forming apparatus of this invention. It is a block diagram explaining the vacuum chamber in other embodiment of the film forming apparatus of this invention. It is sectional drawing explaining the vacuum chamber in further another embodiment of the film forming apparatus of this invention. It is each sectional drawing (A) (B) explaining the vacuum chamber in other embodiment of the film forming apparatus of this invention. It is sectional drawing explaining the vacuum chamber in further another embodiment of the film forming apparatus of this invention. It is a top view explaining other embodiment of the film formation apparatus of this invention. It is a cross-sectional part of the principal part explaining the conductive member of the present invention. It is a ternary phase diagram by the carbon film structure and hydrogen content in the conductive carbon layer of the conductive member.

FIG. 1 is a view for explaining an embodiment of the film forming apparatus of the present invention.
The film forming apparatus shown in FIG. 1 (A) is an apparatus that forms a film on the surface of a plate-like workpiece W by sputtering. Although the planar shape and material of the workpiece W are not particularly limited, the workpiece W is, for example, a metal rectangular plate, and is used as a conductive member by forming a conductive film on the surface thereof by sputtering. In this case, the workpiece W is a base material for the conductive member.

  The film forming apparatus includes a plurality of vacuum chambers 1A to 1P arranged at predetermined intervals, chamber transfer means for moving these vacuum chambers 1A to 1P in the arrangement direction, and the interiors of the vacuum chambers 1A to 1P containing workpieces W. Is provided with a vacuum exhaust means for evacuating the vacuum. In this embodiment, 16 vacuum chambers 1 </ b> A to 1 </ b> P are illustrated, the chamber transfer means is the rotary table 2, and the vacuum exhaust means is the vacuum pump 3.

  The film forming apparatus of the illustrated example includes a rotary table 2 that is rotationally driven on a base 50, and the vacuum chambers 1 </ b> A to 1 </ b> P are radially arranged on the rotary table 2 at equal intervals. Thereby, each vacuum chamber 1A-1P is arrange | positioned on a circular circulation path | route, and moves to the arrangement direction all at once.

  As shown in FIG. 1B, each of the vacuum chambers 1A to 1P is large enough to accommodate and process a single workpiece W, compared to a vacuum processing chamber that processes a large number of workpieces. Obviously small. Each of the vacuum chambers 1A to 1P includes a work jig 4 for holding a work W therein, a sputtering target 5, an inert gas introducing means 14 for introducing an inert gas, and a high voltage using the target 5 as a cathode. The voltage application means 16 which applies is provided. Moreover, each vacuum chamber 1A-1P is equipped with the magnetic circuit 6 for increasing the energy amount of the atom and molecule | numerator of the target 5 to blow off on the back surface of the target 5, and also the heating means 7 for heating the inside. It has.

  In the vacuum chambers 1A to 1P shown in FIG. 1B, the target 5 and the magnetic circuit 6 are arranged on one side of the workpiece W. Therefore, in this embodiment, a film is formed on one side of the workpiece W. In addition, when forming a film on both surfaces of the workpiece | work W, the target 5 and the magnetic circuit 6 should just be arrange | positioned on the both sides of the workpiece | work W like embodiment mentioned later.

  The workpiece jig 4 holds both ends of the plate-like workpiece W, and holds the workpiece W in a state where the surface of the target 5 and the surface of the workpiece W are parallel to each other. Moreover, although the workpiece jig 4 in the illustrated example is a fixed type, in the case of a movable type described later, in order to shorten the moving distance of the workpiece, the long side of the rectangular workpiece W is held. It is desirable to adopt a configuration that moves in a direction along the short side.

  As sputtering in the film forming apparatus, in order to increase the amount of energy of atoms and molecules of the target 5 to be flipped off, the magnetic force of the outer magnetic pole is made stronger than the inner magnetic force to form a non-equilibrium magnetic field that intentionally breaks the balance of the magnetic force. An unbalanced magnetron sputtering (UBMS) method in which the circuit 6 is provided on the back surface of the target 6 may be used. In addition, it is more desirable that the work W be irradiated with ions of an inert gas whose energy is controlled by a bias voltage applied to the work W during the film formation to control the film characteristics.

  The vacuum chambers 1 </ b> A to 1 </ b> P are provided with a lid C that opens and closes the inside thereof at the distal end portion on the outer peripheral side of the rotary table 4, as shown in part in FIG. A pipe 8 is connected to the base end portion which is the center.

  In contrast, the film forming apparatus includes an inert gas supply device 9 and a main power supply 10 in addition to the vacuum pump 3 described above. The coating film forming apparatus includes a branch body 11 including a fluid path and electrical wiring at the center of the rotary table 4, and the vacuum chambers 1 </ b> A to 1 </ b> P via the branch body 11 and the pipes (partially shown) 8. Evacuation and supply of inert gas and electric power. Therefore, each pipe 7 is provided with a valve for maintaining a reduced pressure state in the vacuum chamber and a valve for adjusting the flow rate of the inert gas.

  In addition, as shown in FIG. 1A, the film forming apparatus illustrates a preparation area A1, a vacuuming area A2, a heating area A3, a bombarded area A4, and a film forming area A5 in a circular circuit. They are provided in order in one direction indicated by the middle arrow.

  The preparation area A1 is an area for putting the workpiece W in and out of the vacuum chamber (1O to 1C) in the area. The evacuation region A2 is a region for removing impurities by evacuating the vacuum chamber (1D, 1E) containing the workpiece W. The heating region A3 is a region for removing moisture by heating the inside of the vacuum chamber (1F, 1G). The bombarded region A4 is a region for supplying an inert gas into the vacuum chamber (1H, 1I) to remove the oxide film on the workpiece surface. And film-forming area | region A5 is an area | region for forming a film on the surface of the workpiece | work W in the vacuum chamber (1J-1N) in the said area | region.

  In the film formation region A5, glow discharge is generated by applying a high voltage using the target 5 as a cathode in a vacuum atmosphere into which an inert gas is introduced, and the inert gas (for example, argon gas) is ionized to form a target. The target atoms and molecules are blown off by the collision, and a film is formed on the workpiece W. That is, film formation by sputtering is performed.

  Here, when a coating film is formed on a workpiece (substrate) by sputtering, various processes are performed as described above. At this time, the processing time in each process varies. On the other hand, in the film forming apparatus of the present invention, the vacuum chambers 1A to 1P move at the same speed at the same time. Therefore, the processing time of each process is converted into the moving distance of the vacuum chambers 1A to 1P. The length of A1 to A5 is set.

  The film forming apparatus having the above configuration moves the vacuum chambers 1A to 1P all at once in the arrangement direction by the rotary table 4 and sequentially moves them to the respective regions A1 to A5. Thereby, in each vacuum chamber 1A-1P, the film formation by vacuum drawing, a heating, a bombard process, and sputtering is performed in order. That is, all processes are completed in one vacuum chamber. And in the preparation area A in particular, the lid C is opened, the work W after the film formation is taken out, the inspection and cleaning in the vacuum chamber are appropriately performed, and the next work W is accommodated in the vacuum chamber. To do.

  In this way, the film forming apparatus can continuously form a film on the workpiece W using the plurality of vacuum chambers 1A to 1P, and can take out the workpiece W after processing and supply a new workpiece W. Can be done sequentially. Therefore, according to the film forming apparatus, it is possible to realize a reduction in manufacturing cost and a reduction in tact time in an apparatus for forming a film on the surface of the plate-like workpiece W by sputtering.

  In the film forming apparatus, the work jig 4 holds the work W in a state where the surface of the target 5 and the surface of the work W are parallel to each other. Kept constant. Thereby, a coating film can be uniformly formed on both surfaces of the workpiece W, and controllability such as film thickness adjustment can be improved.

  Furthermore, the above-described film forming apparatus arranges the plurality of vacuum chambers 1A to 1P on the circulation path, and moves them all at once, so that the preparation area A1, the vacuum area A2, the heating area A3, the bombard area A4, and Since the film is sequentially moved to the film formation region A5, no spare chamber as in the conventional apparatus is required. As a result, the film forming apparatus has a small apparatus structure, can further promote the reduction of manufacturing cost and the tact time, and is extremely useful for mass production of the workpiece W having a film.

  FIG. 2 is a view for explaining a vacuum chamber 1A in another embodiment of the film forming apparatus of the present invention. In the following embodiments, the same components as those of the previous embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the illustrated vacuum chamber 1A, a plurality of processing stages each including a target 5, an inert gas introducing means 14, a voltage applying means 16, and a magnetic circuit 6 are arranged in one direction. In this embodiment, two processing stages S1 and S2 are provided. In this case, the workpiece jig 4 is a movable workpiece jig that sequentially conveys the workpiece W to the individual processing stages S1 and S2.

  The film forming apparatus provided with the vacuum chamber 1A forms a film by sputtering on one surface of the workpiece W at the first processing stage S1, and then moves the workpiece jig 4 to the next processing stage S2. A second film is formed on the formed film. In this case, the film formation region A5 becomes first and second film formation regions A5a and A5b as shown in FIG.

  The above-described film forming apparatus can obtain the same effects as those of the previous embodiment, and can form a plurality of layers (two layers) on one surface of the workpiece W. Can increase productivity.

  FIG. 3 is a diagram illustrating a vacuum chamber 1A in still another embodiment of the film forming apparatus of the present invention. The illustrated vacuum chamber 1A includes a plurality (two) of processing stages S1 and S2 as in the previous embodiment. Both processing stages S1 and S2 are symmetrically provided with a pair of targets 5 and a magnetic circuit 6 with the workpiece W held by the workpiece jig 4 in between. The workpiece jig 4 is a movable workpiece jig that sequentially conveys the workpiece W to the individual processing stages S1 and S2.

  The film forming apparatus provided with the vacuum chamber 1A can obtain the same effect as the previous embodiment, and can form a plurality of layers (two layers) on both surfaces of the workpiece W. The productivity of such a workpiece W can be increased.

  In the vacuum chamber 1A, a shielding plate 12 is provided between the target 5 of one processing stage S1 and the target 5 of the other processing stage S2. Thereby, the scattering range of the material (atoms / molecules) of the target 5 can be suppressed, and favorable film formation can be performed in each of the processing stages S1 and S2.

  FIG. 4 is a block diagram illustrating a vacuum chamber 1A in still another embodiment of the film forming apparatus of the present invention. The illustrated vacuum chamber 1A includes a vacuum pump (evacuation means) 3 and an inert gas supply device 9 as well as the target 5 and workpiece W in each processing stage S1, S2, as shown in FIGS. Are provided with power supplies 13 and 13 for applying a bias voltage B between them.

  The film forming apparatus provided with the vacuum chamber 1A can obtain the same effect as that of the previous embodiment, and in addition, an inert gas whose energy is controlled by a bias voltage applied to the workpiece during film formation. The work can be irradiated with ions, the amount of atoms and molecules of the target 5 can be increased, and the tact time can be further shortened as the film formation time is shortened. In addition, it is possible to control the film characteristics, and it is possible to improve controllability such as adjustment of the film structure and film thickness.

  FIG. 5 is a view for explaining a vacuum chamber 1A in still another embodiment of the film forming apparatus of the present invention. The illustrated vacuum chamber 1 </ b> A includes a lework jig 4 that holds two works W and W in an overlapping manner. In this case, a pair of targets 5 and a magnetic circuit 6 are symmetrically arranged in each processing stage S1, S2.

  The film forming apparatus including the vacuum chamber 1A can obtain the same effects as those of the previous embodiment, and can form a plurality of layers of films on one surface of the workpiece W. The productivity of W can be further increased.

  FIG. 6 is a view for explaining a vacuum chamber 1A in still another embodiment of the film forming apparatus of the present invention. In the illustrated vacuum chamber 1A, a work jig 4 includes first and second jigs 4A and 4B for holding a single work W, respectively. The first and second jigs 4A and 4B are movable work jigs that sequentially convey the work W to the individual processing stages S1 and S2. A pair of targets 5 and a magnetic circuit 6 are arranged symmetrically in each processing stage S1, S2.

  The film forming apparatus including the vacuum chamber 1A can obtain the same effects as those of the previous embodiment, and can form a single-layer or multiple-layer film on one or both surfaces of the workpiece W. it can. That is, as shown in FIG. 6 (A), the first and second processing stages S1 and S2 stop the respective workpieces W and W, or as shown in FIG. 6 (B), both the first processing stage S1 and the first processing stage S1. It is possible to selectively form a film on the workpiece W by stopping the workpieces W and W or changing the position of the workpiece W.

  FIG. 7 is a view for explaining a vacuum chamber 1A in still another embodiment of the film forming apparatus of the present invention. The illustrated vacuum chamber 1A has a structure in which the work jig 4 is fixed and the target 5 is movable. Even with such a configuration, it is possible to form a good film as in the previous embodiment.

FIG. 8 is a view for explaining still another embodiment of the film forming apparatus of the present invention.
In the illustrated film forming apparatus, a plurality of vacuum chambers 1A to 1L are linearly arranged. This film forming apparatus moves the vacuum chambers 1 </ b> A to 1 </ b> L all at once in the arrangement direction (right direction in the drawing) by the linear drive type chamber transfer means 15. On the transfer path, an accommodation area A11 for the workpiece W, an evacuation area A12, a heating area A13, a bombardment area A14, a film formation area A15, and an extraction area A16 for the workpiece W are sequentially set.

  Even in the above-described film forming apparatus, as in the previous embodiment, in the apparatus for forming a film on the surface of the plate-like workpiece W by sputtering, it is possible to reduce the manufacturing cost and the tact time. it can.

  Further, in the configuration in which the vacuum chambers 1A to 1L are linearly arranged as described above, a return path can be provided on the lower side of these to form an endless path. Further, in the above-described film forming apparatus, the work is carried in from one side of the apparatus and the work is carried out from the other side of the apparatus. In the previous film forming apparatus shown in FIG. 1, the work is carried in on one side of the apparatus. And carry out. Therefore, a film forming apparatus having a different vacuum chamber arrangement may be selected according to the layout of the production line.

  Here, a specific example of the workpiece formed by the above-described film forming apparatus is a plate-like conductive member. This conductive member includes, for example, one that is used as a separator constituting a fuel cell together with a membrane electrode structure.

  The conductive member E shown in FIG. 9 is manufactured by, for example, a film forming apparatus provided with the vacuum chamber 1A shown in FIG. The conductive member E is used as the separator, and the workpiece W as a base material is made of stainless steel. Then, a first film is formed on the surface of the workpiece W in the first processing stage S1 in FIG. 4 and the first film formation region A5a in FIG. 1A, and then the next processing in FIG. A second layer film is formed in the stage S2 and the second film formation region A5b in FIG.

  At this time, in the conductive member E, the first film is the chromium intermediate layer L1, and the second film is the conductive carbon layer L2 containing conductive carbon. The conductive carbon layer L2 is a non-honourous carbon film and is typically DLC (diamond-like carbon).

  Further, as shown in FIG. 10, the conductive carbon layer L2 in the conductive member E has a higher electrical conductivity when the bond is SP2 than when the bond between carbon and hydrogen is SP3. And less hydrogen is desirable. Therefore, when the conductive member E is manufactured, as described in the embodiment shown in FIG. 1, the process of heating the inside of the vacuum chamber to remove moisture (heating region A3) and the inertness in the vacuum chamber are performed. A step (bombarded region A4) of supplying gas and removing the oxide film on the workpiece surface is essential.

  The conductive member E more preferably has an intensity ratio R (ID / ID) between the D band peak intensity (ID) measured by Raman scattering spectroscopic analysis and the G band peak intensity (IG) in the conductive carbon layer L2. IG) is set to 1.3 or more. The higher the intensity ratio R, the closer to the SP2 bond, and the higher the electrical conductivity. In addition, the intermediate layer L2 has a columnar structure, and the protruding particles constituting the conductive carbon layer L2 are present on the surface of the intermediate layer L1.

  The conductive carbon layer L2 is a layer that is disposed on the intermediate layer L1 and contains conductive carbon. The presence of this layer can improve the corrosion resistance as compared with the case of only the workpiece (base material) W while ensuring the conductivity of the conductive member (separator) E.

  The carbon material that can be used as the conductive carbon is not particularly limited as long as the contact resistance as the conductive member (separator) E is not increased. For the crystallinity and crystalline composition of the carbon material, for example, the ratio (intensity ratio R value: ID / IG) of the G band peak, the intensity, and the D band peak intensity calculated by Raman scattering spectroscopy is used. it can.

  When the carbon material is analyzed by Raman spectroscopy, peaks are usually generated in the vicinity of 1350 cm −1 and 1584 cm −1. Graphite with high crystallinity has a single peak in the vicinity of 1584 cm −1, and this peak is usually referred to as “G band”. On the other hand, a peak near 1350 cm −1 appears as the crystallinity decreases (crystal structure defects increase). This peak is usually referred to as “D band” (note that the peak of diamond is strictly 1333 cm −1) and is distinguished from the above D band). The intensity ratio R (ID / IG) between the D band peak intensity (ID) and the G band peak intensity (IG) depends on the graphite cluster size of the carbon material, the disorder of the graphite structure (crystal structure defect), the SP2 bond ratio, etc. Used as an indicator. That is, in the present invention, it can be used as an index of contact resistance of the conductive carbon layer L2, and can be used as a film quality parameter for controlling the conductivity of the conductive carbon layer L2.

  The R (ID / IG) value is calculated by measuring the Raman spectrum of the carbon material using a microscopic Raman spectrometer. Specifically, the relative intensity ratio (peak area ratio (ID / ID) between 1300 to 1400 cm-1 peak intensity (ID) called D band and 1500 to 1600 cm-1 peak intensity (IG) called G band. IG)) is calculated.

  Here, when the strength ratio (R value) of the conductive carbon layer L2 is within a predetermined range, an increase in contact resistance can be remarkably suppressed. Therefore, it is preferable to select the carbon material used as the conductive carbon so that the conductive short layer L2 has a predetermined strength ratio. Specifically, the predetermined range relating to the strength ratio (R value) of the conductive carbon layer L2 is not limited to the following, but is preferably 1.3 or more, more preferably 1 as described above. .4 to 2.0, more preferably 1.4 to 1.9, and particularly preferably 1.5 to 1.8. If this value is 1.3 or more, the conductive carbon layer L2 in which the conductivity in the stacking direction is sufficiently secured can be obtained. Moreover, if R value is 2.0 or less, the reduction | decrease of a graphite component can be suppressed. Furthermore, an increase in internal stress of the conductive carbon layer L2 itself can also be suppressed, and the adhesion with the intermediate layer L1 that is the base can be further improved.

  In this way, the conductive member E has high conductivity and corrosion resistance by the conductive carbon layer L2, and the adhesion of the conductive carbon layer L2 is increased by the chromium intermediate layer L1, which is good for a long time. The performance can be maintained.

  The configuration of the film forming apparatus of the present invention is not limited to the above-described embodiments, and details of the configuration can be changed as appropriate without departing from the gist of the present invention.

1A to 1P Vacuum chamber 2 Rotary table (chamber transfer means)
3 Vacuum pump (evacuation means)
4 Work jig 4A 1st jig 4B 2nd jig 5 Target 6 Magnetic circuit 13 Power source (of bias voltage) 14 Inert gas introduction means 15 Chamber transfer means 16 Voltage application means A1 Preparation area A2 A12 Vacuum drawing area A3 A13 Heating area A4 A14 Bombarded area A5 A15 First film forming area A5a First film forming area A5b Second film forming area A11 Housing area A16 Extraction area E Conductive member L1 Intermediate layer L2 Conductive carbon layer S1 S2 Processing stage W Workpiece (Base material)

Claims (10)

An apparatus for forming a film by sputtering on the surface of a plate-like workpiece,
A plurality of vacuum chambers arranged at predetermined intervals;
Chamber transfer means for moving these vacuum chambers in the arrangement direction;
Equipped with a vacuum exhaust means for evacuating the inside of the vacuum chamber containing the workpiece,
Each vacuum chamber includes a work jig for holding a work therein, a sputtering target, an inert gas introducing means for introducing an inert gas, and a voltage applying means for applying a high voltage to the target. A film forming apparatus.   The film forming apparatus according to claim 1, wherein the work jig holds the work in a state where a surface of the target and a surface of the work are parallel to each other. Inside the vacuum chamber, a plurality of processing stages composed of a target and a magnetic circuit that forms a magnetic field on the back surface of the target are arranged in one direction,
The film forming apparatus according to claim 1, wherein the workpiece jig is a movable workpiece jig that sequentially conveys workpieces to individual processing stages.   The film forming apparatus according to claim 3, wherein the processing stage includes a pair of targets and a magnetic circuit symmetrically with a work held by a work jig in between.   The film forming apparatus according to claim 1, wherein the vacuum chamber includes a power source that applies a bias voltage to the workpiece.   The film forming apparatus according to claim 1, wherein the work jig overlaps and holds two works.   The work jig is composed of first and second jigs for holding a single work, and the first and second jigs are movable types that sequentially convey the work to individual processing stages. It is a workpiece jig, The film forming apparatus of any one of Claims 3-5 characterized by the above-mentioned.   The film forming apparatus according to claim 1, wherein the plurality of vacuum chambers are arranged along a circulation path. A preparation area where workpieces are put in and out of the vacuum chamber, a vacuum area where vacuum is removed from the vacuum chamber containing the work and impurities are removed, and moisture is removed by heating the vacuum chamber. A heating region, a bombarded region for supplying an inert gas into the vacuum chamber to remove the oxide film on the work surface, and a film forming region for forming a film on the surface of the work in the first processing stage.
9. The film forming apparatus according to claim 8, wherein the vacuum chambers are moved in the arrangement direction by the chamber transfer means and are sequentially moved to the respective regions. Two processing stages are provided in the vacuum chamber,
A preparation area where workpieces are put in and out of the vacuum chamber, a vacuum area where vacuum is removed from the vacuum chamber containing the work and impurities are removed, and moisture is removed by heating the vacuum chamber. A heating region to be heated, a bombarded region to remove an oxide film on the work surface by supplying an inert gas into the vacuum chamber, a first film forming region to form a film on the surface of the work in the first processing stage, and a next In order, a second film formation region for forming a film on the surface of the work moved to the stage,
9. The film forming apparatus according to claim 8, wherein the vacuum chambers are moved in the arrangement direction by the chamber transfer means and are sequentially moved to the respective regions.

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