JP2002334489A - Method of manufacturing optical information recording medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing optical recording media which is capable of forming the optical disk media of the number of the layers greater than the number of deposition chambers disposed in sputtering equipment provided with a plurality of the deposition chambers for forming arbitrary thin films and is extremely small in the variation of the recording and reproducing characteristics among the formed optical recording media when mass-producing the optical disk media. SOLUTION: This method has a case the base materials fed into the sputtering equipment pass the interior of all the deposition chamber within the sputtering equipment at least >=2 times and the thin films are formed on the base materials passing the interior of the deposition chamber in at least >=2 deposition chambers and the case the thin films are not formed, by which the formation of the optical recording media is made possible and when the optical recording media are mass-produced, the feeding of the base materials into the sputtering equipment is performed by the method of not continuously feeding the base materials.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical disk medium, and more particularly, to a method for manufacturing a large number of optical disk mediums having more layers than the number of film forming chambers provided in a sputtering apparatus for forming an optical disk medium. Also, the present invention relates to a manufacturing method for stably forming.

[0002]

2. Description of the Related Art An example of a conventional method for forming an optical disk medium will be described with reference to a sputtering apparatus shown in FIG. The sputtering apparatus shown in FIG. 4 includes a load lock chamber 37, a plurality of independent film forming chambers 31 to 36, a rotating body 44 for transporting a substrate, and a plurality of substrate holders. Note that the number of film formation chambers is not particularly limited. In this example, a case where the number of film formation chambers is six will be described.

[0003] The load lock chamber 37 is provided with a vacuum pump and a leak valve (not shown) to transfer the appropriately charged base material to a vacuum state. Alternatively, it plays a role of transferring a substrate in a vacuum state to the atmosphere and discharging the substrate.

[0004] The substrate holders 45 to 51 are provided on the rotating body 44 at equal intervals, and the rotating body 44 and all the substrate holders are always in a vacuum state.

[0005] After the substrate put into the load lock chamber is fixed to an arbitrary substrate holder and transferred to a vacuum state, the rotating body 44 is continuously rotated at a constant angle of 360/7 degrees in the case of the present embodiment. By rotating in one direction, the wafers are sequentially conveyed to adjacent film forming chambers.

[0006] Each of the film forming chambers is constantly evacuated by a vacuum pump, and an arbitrary target material is installed in each of the film forming chambers so as to face the substrate holder. The cooling water is circulated for suppressing the temperature rise of the target.

In each of the film forming chambers, an arbitrary sputtering gas is introduced into the film forming chamber, a predetermined voltage is applied to the target material, and the sputtering of the target material can be performed. A thin film can be formed on the substrate.

Hereinafter, a conventional method for forming an optical disk medium using the sputtering apparatus will be described.
A base material for forming an optical disk medium is put into a load lock chamber, and is fixed to an arbitrary substrate holder (for example, the substrate holder 45 in FIG. 4). For example, the substrate is conveyed to the first film forming chamber 31 by being rotated clockwise by a predetermined angle. At this time, another substrate holder (for example, substrate holder 51) is being transported to the load lock chamber, and the load lock chamber is returned to the atmosphere, another substrate is put into the load lock chamber, and fixed to the substrate holder 51. . Each time the base material charged into the load lock chamber is transferred to the first film formation chamber in the same manner,
Another base material is put into the load lock chamber, and is fixed to the substrate holder being transferred to the load lock chamber at that time.

The loaded substrates are sequentially conveyed from the first film forming chamber to the sixth film forming chamber, where a thin film is formed in each of the film forming chambers, and the thin films are laminated to form an optical disk medium. Is formed. For example, when forming an optical disk medium in which a material layer A, a material layer B, a material layer C, a material layer D, a material layer E, and a material layer F are sequentially stacked on a substrate, a target placed in each of the film forming chambers As a material, the first film forming chamber 31
, A target material A for forming the material layer A is disposed, a target material B for forming the material layer B is disposed in the second film forming chamber 32, and a target material A for forming the material layer B is disposed in the third film forming chamber 33. Material layer C
A target material C for forming the material layer D is disposed in the fourth film forming chamber 34, and a material layer E is formed in the fifth film forming chamber 35. A target material E for forming the material layer F is disposed in the sixth film forming chamber 36, and a thin film is sequentially formed in the film forming chamber on the base material. To form an optical disk medium. After the thin film is formed in the sixth film forming chamber, the base material is transferred to the load lock chamber, the load lock chamber is returned to the atmosphere, the base material is discharged, and another new base material is charged. . By repeatedly loading and unloading the substrate, a large amount of optical disk media can be formed continuously.

Generally, the setting of the sputtering time in each film forming chamber is performed so that the thickness of each material layer becomes the designed thickness based on the sputtering rate of the target material checked in advance in each film forming chamber. The time is set in each film forming chamber for a fixed time.

[0011]

In recent years, optical disc media have been improved in function and density, and the number of thin films laminated on a transparent substrate tends to be increased. In the method for forming an optical disk medium according to the related art, when the number of layers of the optical disk medium to be formed increases and the number of film forming chambers provided in a sputtering apparatus for forming the optical disk medium is larger, the optical disk medium is removed. Could not be formed.

The present invention enables a sputtering apparatus having a limited number of film forming chambers to form an optical disk medium having a larger number of layers than the film forming chambers provided in the sputtering apparatus. Another object of the present invention is to provide an optical disk medium in which variations in recording / reproducing characteristics between formed optical disk media are extremely small when mass-producing the optical disk medium.

[0013]

According to the present invention, there is provided a method for manufacturing an optical disk medium comprising at least three layers, and at least two layers made of the same material, on a transparent substrate. A plurality of independent film forming chambers are provided, an arbitrary target material is installed in each of the film forming chambers, and the number of chambers of the film forming chamber provided in the sputtering apparatus is equal to or less than the number of layers of the optical disc medium. The method of forming an optical disk medium, characterized in that the substrate put into the apparatus passes through all the film forming chambers in the sputtering apparatus at least twice.
With a sputtering apparatus having a limited number of film forming chambers, it is possible to form an optical disk medium having a larger number of layers than the film forming chambers provided in the sputtering apparatus.

[0014] Further, the sputtering device inputs the base material,
It has a load lock chamber for discharging and / or discharging, and it is possible to fix the base material put in the load lock chamber, and it is repeated to sequentially transfer to the film formation chamber and then to the load lock chamber Each time the substrate holder is transported to the load lock chamber sequentially, the case where the substrate is put into the load lock chamber and the case where the substrate is not put are alternately repeated, or the substrate is put By being characterized in that the cases of performing the operations are not continuous, it is possible to provide an optical disk medium having extremely small variations in recording / reproducing characteristics between the formed optical disks when mass-producing the optical disk medium.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. As an example, a method for forming an optical disk medium having seven layers shown in FIG. 2 using a sputtering apparatus provided with six film forming chambers shown in FIG. 1 will be described below.

The structure of the optical disk medium shown in FIG. 2 is such that a material layer A23, a material layer B24, a material layer C
25 is an optical disk medium composed of seven layers in which a material layer B26, a material layer A27, a material layer D28, and a material layer E29 are laminated. The sputtering apparatus shown in FIG. The apparatus has the same configuration except for the method and the arrangement of the targets. Here, only the method of forming the optical disk medium and the arrangement of the targets will be described in detail.

As an example of the target material to be arranged in each of the film forming chambers, there is the following arrangement method. A target material B for forming a material layer B24 is disposed in the first film forming chamber 1, a target material C for forming a material layer C25 is disposed in the second film forming chamber 2, The target material B for forming the material layer B26 is disposed in the film forming chamber 3 of the fourth embodiment, and the material layers A23 and A
27, a target material D for forming a material layer D28 in the fifth film forming chamber 5, and a material layer E29 in the sixth film forming chamber 6. A target material E to be formed is arranged.

The substrates placed in the load lock chambers are sequentially transported from the first film forming chamber to the sixth film forming chamber, but the formation of a thin film is not necessarily performed in each of the film forming chambers. Instead, a thin film is formed so that the configuration of the optical disk medium shown in FIG. 2 can be formed. That is, after the substrate is put into the load lock chamber, the substrate is fixed to, for example, the substrate holder A, the load lock chamber is evacuated, and then the substrate is transported to the first film forming chamber. In one film forming chamber, the thin film is transferred to the second film forming chamber without forming a thin film. In the second film forming chamber, the film is transferred to the third film forming chamber without forming a thin film. In the film formation chamber, the thin film is transferred to the fourth film formation chamber without forming a thin film. In the fourth film formation chamber, the material layer A23 is sputtered to form a thin film. To the sixth film forming chamber without forming a thin film in the fifth film forming chamber, and to the load lock chamber without forming a thin film in the sixth film forming chamber. . Thereafter, a thin film is formed in each of the film forming chambers while the substrate is sequentially transferred from the first film forming chamber to the sixth film forming chamber without breaking the vacuum in the load lock chamber. After forming the material layer E in the sixth film forming chamber, the substrate is transported to the load lock chamber, the load lock chamber is returned to the atmosphere, and the substrate is discharged to form the optical disk medium. Is done.

That is, after the base material once introduced into the load lock chamber is sequentially transferred to the film formation chamber, the base material transferred to the load lock chamber is sequentially transferred to the film formation chamber again without breaking the vacuum. By repeating the transport, it is possible to form an optical disk medium having a larger number of layers than the film forming chamber.

The arrangement of the targets in each of the film forming chambers is not limited to the above-mentioned arrangement, and may be any arrangement. Can be repeatedly performed to the same film forming chamber.

When a large amount of optical disk media is formed by the method of forming a thin film according to the above method, the substrate is loaded into the load lock chamber each time the substrate holder is sequentially transported to the load lock chamber. Instead of
It is preferable that charging and non-charging are alternately repeated, or the case where the substrate is charged is not continuous.

The reason will be described below. In the case where the substrate is loaded into the load lock chamber every time the substrate holder is sequentially transported to the load lock chamber, the number of continuously loaded substrates becomes 7 in the sputtering apparatus, and 7 All substrates are first sputtered only in the fourth deposition chamber, no thin film is formed in other deposition chambers during this time, and the substrate sputtered in the fourth deposition chamber is loaded. After being transported to the lock chamber and sequentially transported again to the film formation chamber, thin film formation is continuously performed in all the film formation chambers. In other words, in the areas other than the fourth film forming chamber, seven thin films are not continuously formed, and then seven thin films are continuously formed. The non-formation and the formation of the thin film are repeated.

If the time during which the thin film is not formed is long, the target temperature drops extremely due to the cooling water circulated on the back surface of the target. Generally, when the temperature decreases in a semiconductor material, the resistivity increases, and when the temperature decreases in a conductor material, the target temperature decreases. The resistivity decreases, causing a problem that the resistivity of the target rapidly changes and the sputtering rate changes. In the case where sputtering is performed by introducing a reactive gas, the reaction speed between the reactive gas and the target material changes due to a change in the temperature of the target surface, and thus there is a problem that the quality of a film to be formed changes.

That is, there arises a problem that the film thickness and the film quality of the film to be formed change due to the temperature change of the target. The instability of film thickness and film quality of optical disc media
Since the recording / reproducing characteristics of the optical disk medium are made unstable, there arises a problem that the variation in the recording / reproducing characteristics becomes large among the seven optical disks that are continuously inserted.

As a method for solving the above problem, instead of loading the substrate into the load lock chamber each time the substrate holder is sequentially transported to the load lock chamber, the loading and unloading of the substrate are alternately performed. It is effective to repeat the above steps, or to charge the base material so that the case of adding the base material is not continuous.

In this case, the formation of the thin film and the non-formation of the thin film do not take a long time, and the temperature of the target surface can be always kept in a stable state. Hereinafter, an example of a method of charging a base material in forming the optical disk medium will be described with reference to Table 1.

[0027]

[Table 1]

The numbers shown at the top of the table indicate the transport of the base material to the film forming chamber, and the substrate holders A to F in the table correspond to the continuous 7 provided in the sputtering apparatus in this order.
1 shows two substrate holders. The substrate input number indicates the order of the substrates input into the load lock chamber of the sputtering apparatus. The substrate holders A, B, C, D, E, F, and G are sequentially transferred to the load lock chamber, and the transfer from the load lock chamber to the film formation chamber is sequentially repeated in this order.

The method for depositing the thin film constituting the optical disk medium is the same as the method for the optical disk medium.
For example, as shown in No. 1 of (Table 1),
After loading the base material into the load lock chamber, the base material is fixed to an arbitrary substrate holder A and transported sequentially to the film formation chamber. A thin film is not formed in the first to third film forming chambers (shown in the hollow column in the table), and a thin film is formed in the fourth film forming chamber. Then, the thin film is not formed in the fifth and sixth film forming chambers, and the base material of the base material input number 1 is transported to the load lock chamber. Without breaking the vacuum in the load lock chamber (hereinafter, shown in number 8 in the table)
The substrate of substrate input number 1 is transported again from the first film forming chamber to the sixth film forming chamber, and a thin film is formed in each of the film forming chambers. Is transported to the load lock chamber, and the substrate is discharged by returning the load lock chamber to the atmosphere.

The substrate of the substrate loading number 2 is loaded into the load lock chamber when the substrate holder C is first transferred to the load lock chamber after the substrate loading number 1 is loaded.
The base material of the base material input number 2 is fixed to the substrate holder C. Similarly, the loading of the substrate of the substrate loading number 3 is performed when the substrate holder E is transported to the load lock chamber for the first time after the loading of the substrate loading number 2, and The loading of the material is performed when the substrate holder G is first transported to the load lock chamber after the loading of the substrate loading number 3.

That is, the substrate is not loaded every time the substrate holder is sequentially transported to the load lock chamber, but is loaded every other substrate holder being transported to the load lock chamber. And the input and the non-input of the base material are repeated.

According to the above-described method of loading the base material, as can be seen from Table 1, in the case of mass production of optical disk media, for example, in the formation of optical disk media number 9 and later, in an arbitrary film forming chamber, The formation of the thin film and the non-formation of the thin film do not continue for a long time, and the temperature of the target surface is always kept in an equilibrium state. Can always provide a stable optical disk medium, that is, it can provide a large amount of optical disk medium with extremely small variation in recording and reproducing characteristics.

In this embodiment, the case where the substrate is charged and not charged is alternately repeated each time the substrate holder is sequentially transported to the load lock chamber. Is an even number, and / or when the substrate is transported to the same film forming chamber three or more times to form an optical disk medium, the substrate is charged each time the substrate holder is transported sequentially to the load lock chamber. It is easy to understand that the substrate may be introduced so as not to be continuous, and in this case, in an arbitrary film forming chamber, the interval at which the thin film is formed is kept constant. It is easy to see that the equilibrium is always kept constant.

As the sputtering apparatus used in this embodiment, the sputtering apparatus shown in FIG. 1 was used. The layer structure of the optical disk medium created in the present embodiment is such that a first dielectric layer, a first diffusion prevention layer, a recording layer, a second diffusion prevention layer, a second dielectric layer, It has a seven-layer structure in which an absorption layer and a reflection layer are stacked in this order. The first dielectric layer and the second dielectric layer are made of the same material, and the first diffusion prevention layer and the second diffusion prevention layer are made of the same material. That is, the number of layers constituting the optical disk medium is 7
In the case where there are five types of materials used for the optical disc medium, the method of forming the layers will be described.

However, the present invention is not limited to the above configuration, and the number of material types used for the optical disc medium is
The optical disk medium may have any configuration as long as it is equal to or less than the number of film forming chambers provided in a sputtering apparatus for forming an optical disk medium.

The material of the substrate is polycarbonate, PM
A resin such as MA or glass is used, and a guide groove for guiding a laser beam is provided. In this embodiment, the substrate 22 is made of a polycarbonate resin having a thickness of 0.6 mm and a diameter of 120 mm.

In this embodiment, the recording layer is made of Te-Sb- which is generally used as a rewritable phase change recording material.
The recording layer is formed by disposing a target material made of a material for the recording layer in an arbitrary film forming chamber of a sputtering apparatus, and applying a mixed gas of argon gas and nitrogen gas to the film forming chamber at the pressure. Is introduced to be 0.2 Pa, and the sputtering target has a D of 0.2 W / cm 2.
C power was applied for a certain period of time.

The time required for the sputtering for forming the recording layer was set so that the film thickness became 10 nm according to the sputtering rate separately obtained. The method for obtaining the sputtering rate is as follows. A substrate is continuously charged into a sputtering apparatus shown in the figure, and after performing sputtering on the substrate for a predetermined time in a film forming chamber for forming a recording layer, the next substrate is formed as described above. After transporting the film to the film chamber and performing sputtering for a certain time ten times, the thickness of the recording layer formed at the eleventh time was obtained by a stylus type profilometer, and the sputtering rate was calculated. The time required to form the recording layer with a thickness of 10 nm was determined to be 2.82 seconds.

In the present embodiment, the first diffusion prevention layer or the second diffusion prevention layer is made of a GeN material.
Formation of the first diffusion prevention layer or the second diffusion prevention layer, the target material made of the material of the diffusion prevention layer is placed in an arbitrary film formation chamber of the sputtering apparatus, and argon gas is placed in the film formation chamber.
The pressure was introduced so as to be 1.0 Pa, and a DC power of 1.0 W / cm ² was applied to the sputtering target for a certain period of time.

The time required for the sputtering for forming the first diffusion preventing layer or the second diffusion preventing layer depends on the thickness of each diffusion preventing layer depending on the separately determined sputtering rate.
nm. The method of obtaining the sputtering rate is as follows: the base material is continuously charged into the sputtering apparatus shown in the figure, and after performing sputtering on the base material for a certain time in a film forming chamber for forming each diffusion prevention layer, the next base material is formed. After being transported to the film forming chamber and performing sputtering for a certain period of time was repeated 10 times, the thickness of each diffusion prevention layer formed at the eleventh time was obtained by a stylus step meter, and the sputtering rate was calculated. The time required for forming the first diffusion prevention layer and the second diffusion prevention layer to a thickness of 5 nm is 1.31.
Seconds.

In the present embodiment, the first dielectric layer and the second dielectric layer are made of a mixed material of ZnS—SiO 2, and the first dielectric layer and the second dielectric layer are formed. Placed a target material made of a dielectric layer material in an arbitrary film forming chamber of a sputtering apparatus, and supplied argon gas into the film forming chamber.
The pressure was introduced to be 0.2 Pa, and RF power of 3.0 W / cm 2 was applied to the sputtering target for a certain period of time.

The time required for the sputtering for forming the first dielectric layer and the second dielectric layer depends on the sputtering rate obtained separately, and the thickness of the first dielectric layer is 140 n.
m, and the thickness of the second dielectric layer is 35 n
m.

The method for obtaining the sputtering rate is as follows. A substrate is continuously charged into a sputtering apparatus shown in the figure, and after performing sputtering for a predetermined time on the substrate in a film forming chamber for forming a dielectric layer, the following method is performed. After transferring the substrate to the film forming chamber and performing sputtering for a certain period of time ten times, the thickness of the dielectric layer formed at the eleventh time was obtained by a stylus-type profilometer, and the sputtering rate was calculated. The time required to form the first dielectric layer with a thickness of 140 nm is 8.70 seconds, and the thickness of the second dielectric layer is 35 nm.
The time required to form was determined to be 2.24 seconds.

In this embodiment, the light absorbing layer is made of a GeCr alloy material. The light absorbing layer is formed by disposing a target material made of the light absorbing layer material in an arbitrary film forming chamber of a sputtering apparatus. Argon gas was introduced into the film chamber at a pressure of 0.5 Pa, and a DC power of 1.0 W / cm 2 was applied to the sputtering target for a certain period of time.

The time required for the sputtering for forming the light absorbing layer was set so that the film thickness became 30 nm by the sputtering rate separately obtained. The method for obtaining the sputtering rate is to continuously charge the substrate in the sputtering apparatus shown in the figure, perform sputtering on the substrate for a certain time in a film forming chamber for forming a light absorbing layer, and then apply the next substrate After being transported to the film forming chamber and performing sputtering for a certain period of time ten times, the thickness of the light absorption layer formed at the eleventh time was obtained by a stylus step meter, and the sputtering rate was calculated. The time required for forming the light absorbing layer with a thickness of 30 nm was determined to be 3.32 seconds.

In this embodiment, the reflective layer is made of an Al material. The reflective layer is formed by placing a target material made of the material of the reflective layer in an arbitrary film forming chamber of a sputtering apparatus, and placing argon in the film forming chamber. The pressure of the gas is 0.5 Pa
And introduced into the sputtering target.
DC power of 0 W / cm 2 was applied for a certain period of time.

The time required for sputtering for forming the reflective layer was set so that the thickness of the reflective layer was 100 nm according to the sputtering rate separately obtained. The method for obtaining the sputtering rate is as follows. A substrate is continuously charged into a sputtering apparatus shown in the figure, and after performing sputtering for a certain time on the substrate in a film forming chamber for forming a reflective layer, the next substrate is formed as described above. After being transported to the film chamber and performing sputtering for a certain period of time ten times, the thickness of the reflective layer formed at the eleventh time was obtained by a stylus type profilometer, and the sputtering rate was calculated. The time required to form the reflective layer with a thickness of 100 nm was determined to be 7.42 seconds.

Although not shown in the figure, a dummy substrate is bonded using an overcoat layer on a reflective layer and an ultraviolet-curing resin as an adhesive in order to prevent the optical disk medium from adhering to oxidation, corrosion and dust. Configuration.

[0049]

(Example 1) A target material made of GeN was provided for a target material A installed in the sputtering apparatus shown in FIG. 1, and a target material B was made of Te-Sb-Ge.
Is provided as a mixed material, and the target material C
Is provided with a target material using GeN, a target material D is provided with a target material using ZnS-SiO2 as a mixed material, a target material E is provided with a target material using GeCr, and a target material F is used as a target material F. A target material made of Al was provided. The method of loading the base material into the sputtering apparatus was performed by continuously loading the substrate holder each time the substrate holder was sequentially transported to the load lock chamber.

Embodiment 2 The arrangement of a sputtering apparatus and a target material for forming an optical disk medium and the method of laminating thin films constituting an optical disk medium are the same as those in Embodiment 1. Instead of loading the base material into the load lock chamber each time the holder is sequentially transported to the load lock chamber, the loading and unloading of the base material are alternately repeated. The method of forming and the method of charging the substrate into the sputtering apparatus were performed by the methods shown in the above (Table 1).

An evaluation method for an optical disk medium will be described below.
Recording and erasing of signals are performed by first rotating the medium using a rotation control device, narrowing the laser light to a smiling spot by an optical system, and irradiating the medium with the laser light. An amorphous state generating power level at which a local portion of the recording layer can be reversibly changed to an amorphous state by irradiation with laser light is P1, and a crystal that can be reversibly changed to a crystalline state by laser irradiation. The state generation power level is set to P2, and the laser power is modulated between P1 and P2 to form a recording mark or an erased portion, and information is recorded, erased, and overwritten. Here, when irradiating the power of P1, a so-called multi-pulse formed by a train of pulses is used. However, a pulse that does not use a multi-pulse may be used.

Also, the laser beam irradiation at the power level lower than the power levels of P1 and P2 does not affect the optical state of the recording mark, and the irradiation reproduces the recording mark from the medium by the irradiation. Therefore, the power level at which a sufficient reflectance can be obtained is set to the reproduction power level
A signal from a medium obtained by irradiating a laser beam having a power of P3 is read by a detector, and an information signal is reproduced.

Various conditions are as follows, for example. The wavelength of the laser beam is 650 nm, the numerical aperture of the objective lens used is 0.60, the signal system is the EFM modulation system, the shortest bit length is 0.28 μm, and the scanning speed of the laser beam in the track direction is 8 m / s. . Using a substrate on which tracks called grooves and lands (between grooves) are alternately formed, signals are recorded on both the grooves and the lands. The track pitch is 0.60 micrometer. Of course, substrates having different width ratios between the groove and the land may be used.

The evaluation of the characteristics of the optical disk medium is performed by sequentially recording five consecutive tracks a, b, c, d, and e into a, e, b,
After recording a random signal in steps of 1T from 3T to 11T in the order of d and c, the jitter value of track c was evaluated. FIG. 3 shows the results of evaluating the jitter characteristics of the 100th to 200th optical disk media among the optical disk media formed in Example 1 and Example 2, respectively.
Shown in

The jitter characteristic of the optical disk medium formed in Example 2 is most often the disk having the characteristic of 8.2% to 8.4%, and the jitter value is extremely good.
In addition, there is little variation in characteristics. On the other hand, the jitter characteristic of the optical disk medium formed in the first embodiment is totally equal to that of the second embodiment.
It is worse than the optical disk medium formed by the method described above, and the fluctuation of the jitter characteristic is large.

[0056]

According to the present invention, an optical disk medium can be formed by a sputtering apparatus provided with a smaller number of target materials than the number of material layers constituting the optical disk medium. In the case of production, variations in recording / reproducing characteristics between the formed optical disk media can be extremely reduced.

[Brief description of the drawings]

FIG. 1 is a diagram showing an arrangement of a sputtering apparatus and a target on which an optical disk medium is formed according to an embodiment.

FIG. 2 is a configuration diagram of an optical disk medium described in the embodiment.

FIG. 3 is a diagram showing jitter characteristics of the optical disk medium created in the embodiment.

FIG. 4 is a diagram showing a sputtering apparatus and a target arrangement for forming an optical disk medium according to the prior art.

[Explanation of symbols]

 1,31 First film forming chamber 2,32 Second film forming chamber 3,33 Third film forming chamber 4,34 Fourth film forming chamber 5,35 Fifth film forming chamber 6,36 Sixth , 37 Load lock chamber 8, 10, 39 Target material B 9, 40 Target material C 11, 38 Target material A 12, 41 Target material D 13, 42 Target material E 14, 44 Rotating body 15, 45 Substrate holder A 16,46 Substrate holder B 17,47 Substrate holder C 18,48 Substrate holder D 19,49 Substrate holder E 20,50 Substrate holder F 21,51 Substrate holder G 22 Substrate 23,27 Material layer A 24,26 Material layer B 25 Material layer C 28 Material layer D 29 Material layer E 43 Target material F

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K029 AA09 AA11 AA24 BB02 BC07 BD00 CA05 KA01 KA09 5D121 AA03 EE03 EE19

Claims (3)

[Claims] 1. A method for manufacturing an optical disk medium comprising at least two or more layers of the same material on a transparent substrate, wherein a plurality of independent sputtering devices are used to form the optical disk medium. A film chamber is provided, and an arbitrary target material is installed in each film forming chamber. The number of chambers of the film forming chamber provided in the sputtering apparatus is equal to or less than the number of layers of the optical disc medium, and is input into the sputtering apparatus. A method of manufacturing an optical information recording medium, wherein the substrate passes through all the film forming chambers in the sputtering apparatus at least twice. 2. A method for manufacturing an optical disk medium, wherein at least one or more of a plurality of independent film forming chambers provided in a sputtering apparatus includes:
2. The method according to claim 1, wherein a thin film is formed on a substrate passing through the film forming chamber, and a thin film is not formed on the base material.
The method for producing the optical information recording medium according to the above. 3. A method for producing an optical disk medium comprising at least three or more layers on a transparent substrate, wherein the same material is used in at least two layers, wherein a sputtering apparatus for forming the optical disk medium inputs a base material, And / or having a load lock chamber for discharging, capable of fixing the base material put into the load lock chamber, and repeatedly transporting the base material sequentially to the film formation chamber and then to the load lock chamber. When the substrate holder is provided and the substrate holder is sequentially transferred to the load lock chamber, the case where the substrate is put into the load lock chamber and the case where the substrate is not put are alternately repeated, or the case where the substrate is put Is not continuous.