JP5634157B2 - 臨界電流密度の磁場角度依存性に優れた超電導体 - Google Patents
臨界電流密度の磁場角度依存性に優れた超電導体 Download PDFInfo
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- JP5634157B2 JP5634157B2 JP2010172400A JP2010172400A JP5634157B2 JP 5634157 B2 JP5634157 B2 JP 5634157B2 JP 2010172400 A JP2010172400 A JP 2010172400A JP 2010172400 A JP2010172400 A JP 2010172400A JP 5634157 B2 JP5634157 B2 JP 5634157B2
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- Prior art keywords
- magnetic field
- superconductor
- current density
- critical current
- field angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002887 superconductor Substances 0.000 title description 38
- 239000000758 substrate Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 6
- 239000002073 nanorod Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000007735 ion beam assisted deposition Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910000601 superalloy Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002247 constant time method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000954177 Bangana ariza Species 0.000 description 1
- 229910002482 Cu–Ni Inorganic materials 0.000 description 1
- 229910017082 Fe-Si Inorganic materials 0.000 description 1
- 229910017133 Fe—Si Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 102000011990 Sirtuin Human genes 0.000 description 1
- 108050002485 Sirtuin Proteins 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0828—Introducing flux pinning centres
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
- H10N60/855—Ceramic superconductors
- H10N60/857—Ceramic superconductors comprising copper oxide
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
前記超電導層の内部に、柱状又は棒状のBaZrO3が、超電導結晶のc軸に対して傾き、かつ、隣接する長手方向がねじれる状態で分散していることを特徴とする酸化物超電導線材。
純GdBa2Cu3O7ターゲットを作製し、スパッタ装置に取り付けた。
11 超電導体層(GdBa2Cu3O7-δ)
12 ナノロッド(棒状又は柱状のBaZrO3)
20 基板
Claims (1)
- 基板上にGdBa2Cu3O7-δ(δ=0〜1)の超電導層を形成した酸化物超電導線材において、
前記超電導層の内部に、柱状又は棒状のBaZrO3が、超電導結晶のc軸に対して傾き、かつ、隣接する長手方向がねじれる状態で分散していることを特徴とする酸化物超電導線材。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010172400A JP5634157B2 (ja) | 2010-07-30 | 2010-07-30 | 臨界電流密度の磁場角度依存性に優れた超電導体 |
US13/111,063 US20120028808A1 (en) | 2010-07-30 | 2011-05-19 | Superconductor superior in dependency of critical current density on magnetic field angle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010172400A JP5634157B2 (ja) | 2010-07-30 | 2010-07-30 | 臨界電流密度の磁場角度依存性に優れた超電導体 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012033402A JP2012033402A (ja) | 2012-02-16 |
JP2012033402A5 JP2012033402A5 (ja) | 2013-10-03 |
JP5634157B2 true JP5634157B2 (ja) | 2014-12-03 |
Family
ID=45527298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010172400A Expired - Fee Related JP5634157B2 (ja) | 2010-07-30 | 2010-07-30 | 臨界電流密度の磁場角度依存性に優れた超電導体 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20120028808A1 (ja) |
JP (1) | JP5634157B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190318849A1 (en) * | 2016-06-16 | 2019-10-17 | Fujikura Ltd. | Oxide superconducting wire and method for manufacturing same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8034745B2 (en) * | 2005-08-01 | 2011-10-11 | Amit Goyal | High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods |
JP2008130291A (ja) * | 2006-11-17 | 2008-06-05 | Central Res Inst Of Electric Power Ind | 超電導体膜及びその製造方法 |
-
2010
- 2010-07-30 JP JP2010172400A patent/JP5634157B2/ja not_active Expired - Fee Related
-
2011
- 2011-05-19 US US13/111,063 patent/US20120028808A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2012033402A (ja) | 2012-02-16 |
US20120028808A1 (en) | 2012-02-02 |
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